USRE49820E1 - Semiconductor device having a self-forming barrier layer at via bottom - Google Patents
Semiconductor device having a self-forming barrier layer at via bottom Download PDFInfo
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- USRE49820E1 USRE49820E1 US16/558,106 US201916558106A USRE49820E US RE49820 E1 USRE49820 E1 US RE49820E1 US 201916558106 A US201916558106 A US 201916558106A US RE49820 E USRE49820 E US RE49820E
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- barrier layer
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- 230000004888 barrier function Effects 0.000 title claims abstract description 82
- 239000004065 semiconductor Substances 0.000 title claims abstract description 49
- 229910052751 metal Inorganic materials 0.000 claims abstract description 60
- 239000002184 metal Substances 0.000 claims abstract description 60
- 239000010949 copper Substances 0.000 claims abstract description 27
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 23
- 239000011572 manganese Substances 0.000 claims abstract description 18
- 229910052802 copper Inorganic materials 0.000 claims abstract description 17
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052748 manganese Inorganic materials 0.000 claims abstract description 12
- 238000009792 diffusion process Methods 0.000 claims abstract description 10
- 229910017052 cobalt Inorganic materials 0.000 claims abstract description 7
- 239000010941 cobalt Substances 0.000 claims abstract description 7
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 6
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 40
- 238000005229 chemical vapour deposition Methods 0.000 claims description 10
- 238000012545 processing Methods 0.000 claims description 8
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 7
- 229910052707 ruthenium Inorganic materials 0.000 claims description 7
- 238000000137 annealing Methods 0.000 claims description 6
- 238000001802 infusion Methods 0.000 claims description 5
- 238000010884 ion-beam technique Methods 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 5
- 238000005240 physical vapour deposition Methods 0.000 claims 8
- 238000000151 deposition Methods 0.000 claims 4
- 230000008021 deposition Effects 0.000 claims 4
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 claims 1
- 238000013459 approach Methods 0.000 abstract description 5
- 239000010936 titanium Substances 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 238000013461 design Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5226—Via connections in a multilevel interconnection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76831—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers in via holes or trenches, e.g. non-conductive sidewall liners
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
- H01L21/76846—Layer combinations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
- H01L21/76855—After-treatment introducing at least one additional element into the layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
- H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/5329—Insulating materials
- H01L23/53295—Stacked insulating layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Definitions
- This invention relates generally to the field of semiconductors and, more particularly, to approaches for applying a self-forming barrier layer along bottom surfaces of vias, trenches, or the like.
- Semiconductor devices are typically formed using multiple layers of material, including conductive, semi-conductive, dielectric, and insulative layers.
- a hole or via may be formed through certain layers.
- the via is then lined with a barrier layer, such as Ti, TiN, or Ti/TiN, and filled with an electrically conductive material, such as a metal, to provide electrical conductivity between the layers.
- barrier layers positioned along a bottom surface of the via often diffuse into the metal layer of the device positioned below the via. Such diffusion has adverse impacts on the reliability of the device.
- the device is formed by providing a metal layer, a cap layer over the metal layer, and an ultra low k layer over the cap layer.
- a via is then formed through the ultra low k layer and the cap layer.
- a barrier layer e.g., cobalt (Co), tantalum (Ta), cobalt-tungsten-phosphide (CoWP), or other metal capable of acting as a copper (CU) diffusion barrier is selectively applied to a bottom surface of the via.
- a liner layer e.g., manganese (MN) or aluminum (AL)
- MN manganese
- AL aluminum
- the via may then be filled with a subsequent metal layer (with or without a seed layer), and the device may then be further processed (e.g., annealed).
- a first aspect of the present invention provides a method for forming a barrier layer in a semiconductor device, comprising: selectively applying the barrier layer along a bottom surface of a via of the semiconductor device; applying a liner layer along a set of sidewalls of the via; and annealing the semiconductor device.
- a second aspect of the present invention provides a method for forming a barrier layer in a semiconductor device, comprising: selectively applying the barrier layer along a bottom surface of a via of the semiconductor device, the via being formed through an ultra low k layer and a cap layer of the semiconductor device; applying a liner layer over the barrier layer and along a set of sidewalls of the via; filling the via with a metal; and processing the semiconductor device to remove the liner layer from over the barrier layer.
- a third aspect of the present invention provides a semiconductor device, comprising: a first metal layer; a cap formed over the first metal layer; an ultra low k layer formed over the cap layer; and a via formed through the ultra low k layer and the cap layer, the via comprising a barrier layer selectively formed along a bottom surface of the via, and a liner layer along a set of sidewall of the via.
- FIGS. 1 A-D shows a cross-section view of a semiconductor device during its formation according to an embodiment of the present invention
- FIGS. 2 A-D shows a cross-section view of a semiconductor device during its formation according to an embodiment of the present invention
- FIGS. 3 A-D shows another cross-section view of a semiconductor device during its formation according to an embodiment of the present invention
- FIGS. 4 A-B shows another cross-section view of a semiconductor device during its formation according to an embodiment of the present invention.
- first element such as a first structure (e.g., a first layer) is present on a second element, such as a second structure (e.g. a second layer) wherein intervening elements, such as an interface structure (e.g. interface layer) may be present between the first element and the second element.
- first structure e.g., a first layer
- second structure e.g. a second layer
- intervening elements such as an interface structure (e.g. interface layer) may be present between the first element and the second element.
- the device is formed by providing a metal layer, a cap layer over the metal layer, and an ultra low k layer over the cap layer.
- a via is then formed through the ultra low k layer and the cap layer.
- a barrier layer e.g., cobalt (Co), tantalum (Ta), cobalt-tungsten-phosphide (CoWP), titanium (Ti), tantalum nitride (TaN), ruthenium (Ru), or other metal capable of acting as a copper (CU) diffusion barrier is selectively applied to a bottom surface of the via.
- a barrier layer e.g., cobalt (Co), tantalum (Ta), cobalt-tungsten-phosphide (CoWP), titanium (Ti), tantalum nitride (TaN), ruthenium (Ru), or other metal capable of acting as a copper (CU) diffusion barrier is selectively applied to a bottom surface of the via.
- a liner layer e.g., manganese (MN) or aluminum (AL) is then applied to a set of sidewalls of the via.
- the via may then be filled with a subsequent metal layer (with or without a seed layer), and the device may the then be further processed (e.g., annealed).
- a progression (A 1 -A 4 ) for forming a semiconductor device 10 according to an embodiment of the present invention is shown.
- a metal layer 12 e.g., copper
- a cap layer 14 and an ultra low k layer 16 e.g., dielectric
- a via 18 is then formed though ultra low k layer 16 and cap layer 14 .
- a barrier layer 20 is then selectively applied to the bottom surface of via 18 as shown. As depicted, barrier layer 20 is only positioned along the bottom surface of via 18 (not along the side walls of via 18 ).
- barrier layer 20 is typically cobalt (Co), but may also be tantalum (Ta), cobalt-tungsten-phosphide (CoWP), titanium (Ti), tantalum nitride (TaN), ruthenium (Ru), or other metal capable of acting as a copper (CU) diffusion barrier. Moreover, as shown in FIG. 1 , barrier layer 20 may be applied via selective chemical vapor deposition (CVD).
- CVD selective chemical vapor deposition
- a liner layer 22 may be applied to the sidewalls of via (and optionally over barrier layer 20 and/or an upper surface of ultra low k layer 16 ) in step A 2 .
- the liner layer 22 may be manganese (Mn), aluminum (Al) or the like.
- via 18 will be filled with a metal layer 24 (e.g., Cu) in step A 3 .
- a seed layer may be applied prior to applying metal layer 24 .
- step A 4 further processing may be applied to device 10 such as annealing or thermal budging, which converts liner layer 22 to MNSi x O y while leaving barrier layer 20 intact.
- a progression (B 1 -B 4 ) for forming a semiconductor device 50 is shown.
- Device 50 will be formed in a similar fashion to device 10 of FIG. 1 .
- a metal layer 52 e.g., copper
- a cap layer 54 and an ultra low k layer 56 e.g., dielectric
- a via 58 is then formed though ultra low k layer 56 and cap layer 54 .
- a barrier layer 60 is then selectively applied to the bottom surface of via 58 as shown (and along upper surface of ultra low k layer 56 ).
- barrier layer 60 is only positioned along the bottom surface (not along the side walls of via 58 ) and is provided/applied via collimated pressurized vapor deposition (PVD).
- barrier layer 60 is typically tantalum (Ta), but may also be cobalt (Co), cobalt-tungsten-phosphide (CoWP), titanium (Ti), tantalum nitride (TaN), ruthenium (Ru), or other metal capable of acting as a copper (CU) diffusion barrier.
- a liner layer 62 may be applied to the sidewalls of via (and optionally over barrier layer 60 ) in step B 2 .
- the liner layer 62 may be manganese (Mn), aluminum (Al) or the like.
- via 58 will be filled with a metal layer 64 (e.g., Cu) in step B 3 .
- a seed layer may be applied prior to applying metal layer 64 .
- step B 4 further processing may be applied to device 50 such as annealing or thermal budging, which converts liner layer 62 to MNSi x O y while leaving barrier layer 60 intact.
- a progression (C 1 -C 4 ) for forming a semiconductor device 100 is shown.
- Device 100 will be formed in a similar fashion to device 10 of FIG. 1 .
- a metal layer 102 e.g., copper
- a cap layer 104 and an ultra low k layer 106 e.g., dielectric
- a via 108 is then formed though ultra low k layer 106 and cap layer 104 .
- a barrier layer 110 is then selectively applied to the bottom surface of via 108 as shown.
- barrier layer 110 is only positioned along the bottom surface of via 108 (not along the side walls of via 108 ), and along an upper surface of ultra low k layer 106 . Moreover, barrier layer provided/applied via gas cluster ion beam (GSIB) infusion.
- barrier layer 110 is typically Ta, but may be may be cobalt (Co), cobalt-tungsten-phosphide (CoWP), titanium (Ti), tantalum nitride (TaN), ruthenium (Ru), or other metal capable of acting as a copper (CU) diffusion barrier.
- a liner layer 112 may be applied to the sidewalls of via (and optionally over barrier layer 110 ) in step C 2 .
- the liner layer 112 may be manganese (Mn), aluminum (Al) or the like.
- via 108 will be filled with a metal layer 114 (e.g., Cu) in step C 3 .
- a seed layer may be applied prior to applying metal layer 114 .
- step C 4 further processing may be applied to device 100 such as annealing or thermal budging, which converts liner layer 112 to MNSi x O y while leaving barrier layer 110 intact.
- steps D 1 -D 2 demonstrate that barrier layer 160 and liner layer 162 may be applied in any order (e.g., barrier layer 160 need not be applied to a vial 58 's bottom surface prior to applying liner layer 162 to side walls of via 158 ).
- device 150 is formed by providing a metal layer 152 (e.g., copper), over which a cap layer 154 and an ultra low k layer 156 (e.g., dielectric) are formed.
- a via 158 is then formed though ultra low k layer 106 and cap layer 104 .
- liner layer 160 e.g., manganese (Mn), aluminum (Al), etc.
- barrier layer 160 may then be applied using any of the materials and/or techniques discussed above in conjunction with FIGS. 1 - 3 .
- a metal layer 164 will be provided via 158 (e.g., with or without a seed layer), and device 150 will be subjected to additional processing (e.g., annealing, etc.).
- design tools can be provided and configured to create the data sets used to pattern the semiconductor layers as described herein. For example, data sets can be created to generate photomasks used during lithography operations to pattern the layers for structures as described herein.
- Such design tools can include a collection of one or more modules and can also include hardware, software, or a combination thereof.
- a tool can be a collection of one or more software modules, hardware modules, software/hardware modules, or any combination or permutation thereof.
- a tool can be a computing device or other appliance on which software runs or in which hardware is implemented.
- a module might be implemented utilizing any form of hardware, software, or a combination thereof.
- processors for example, one or more processors, controllers, application-specific integrated circuits (ASIC), programmable logic arrays (PLA)s, logical components, software routines, or other mechanisms might be implemented to make up a module.
- ASIC application-specific integrated circuits
- PDA programmable logic arrays
- logical components software routines, or other mechanisms might be implemented to make up a module.
- the various modules described herein might be implemented as discrete modules or the functions and features described can be shared in part or in total among one or more modules.
- the various features and functionality described herein may be implemented in any given application and can be implemented in one or more separate or shared modules in various combinations and permutations.
Abstract
Description
Claims (39)
Priority Applications (1)
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US16/558,106 USRE49820E1 (en) | 2012-10-10 | 2019-08-31 | Semiconductor device having a self-forming barrier layer at via bottom |
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US13/648,433 US8907483B2 (en) | 2012-10-10 | 2012-10-10 | Semiconductor device having a self-forming barrier layer at via bottom |
US15/335,313 USRE47630E1 (en) | 2012-10-10 | 2016-10-26 | Semiconductor device having a self-forming barrier layer at via bottom |
US16/558,106 USRE49820E1 (en) | 2012-10-10 | 2019-08-31 | Semiconductor device having a self-forming barrier layer at via bottom |
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US13/648,433 Reissue US8907483B2 (en) | 2012-10-10 | 2012-10-10 | Semiconductor device having a self-forming barrier layer at via bottom |
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US13/648,433 Ceased US8907483B2 (en) | 2012-10-10 | 2012-10-10 | Semiconductor device having a self-forming barrier layer at via bottom |
US15/335,313 Active USRE47630E1 (en) | 2012-10-10 | 2016-10-26 | Semiconductor device having a self-forming barrier layer at via bottom |
US16/558,106 Active USRE49820E1 (en) | 2012-10-10 | 2019-08-31 | Semiconductor device having a self-forming barrier layer at via bottom |
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US13/648,433 Ceased US8907483B2 (en) | 2012-10-10 | 2012-10-10 | Semiconductor device having a self-forming barrier layer at via bottom |
US15/335,313 Active USRE47630E1 (en) | 2012-10-10 | 2016-10-26 | Semiconductor device having a self-forming barrier layer at via bottom |
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US (3) | US8907483B2 (en) |
CN (1) | CN103730410B (en) |
TW (1) | TWI579917B (en) |
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US9847289B2 (en) * | 2014-05-30 | 2017-12-19 | Applied Materials, Inc. | Protective via cap for improved interconnect performance |
CN105226050A (en) * | 2014-06-09 | 2016-01-06 | 旺宏电子股份有限公司 | Semiconductor structure and manufacture method thereof |
US9613907B2 (en) * | 2014-07-29 | 2017-04-04 | Samsung Electronics Co., Ltd. | Low resistivity damascene interconnect |
US9379057B2 (en) * | 2014-09-02 | 2016-06-28 | International Business Machines Corporation | Method and structure to reduce the electric field in semiconductor wiring interconnects |
US9543248B2 (en) * | 2015-01-21 | 2017-01-10 | Qualcomm Incorporated | Integrated circuit devices and methods |
CN107835974B (en) * | 2015-06-30 | 2021-07-16 | 3M创新有限公司 | Electronic device including through-hole and method of forming such electronic device |
EP3317753B1 (en) * | 2015-06-30 | 2022-11-02 | 3M Innovative Properties Company | Patterned overcoat layer |
KR102420087B1 (en) | 2015-07-31 | 2022-07-12 | 삼성전자주식회사 | Method of fabricating a semiconductor device |
US10438847B2 (en) * | 2016-05-13 | 2019-10-08 | Lam Research Corporation | Manganese barrier and adhesion layers for cobalt |
US9806018B1 (en) | 2016-06-20 | 2017-10-31 | International Business Machines Corporation | Copper interconnect structures |
KR20210028324A (en) | 2019-09-03 | 2021-03-12 | 삼성전자주식회사 | Semiconductor device |
US11164778B2 (en) | 2019-11-25 | 2021-11-02 | International Business Machines Corporation | Barrier-free vertical interconnect structure |
US11430735B2 (en) * | 2020-02-14 | 2022-08-30 | International Business Machines Corporation | Barrier removal for conductor in top via integration scheme |
KR20220026627A (en) | 2020-08-25 | 2022-03-07 | 삼성전자주식회사 | Semiconductor device and method for manufacturing the same |
KR20220037101A (en) | 2020-09-17 | 2022-03-24 | 삼성전자주식회사 | Wiring structure having a double capping structure, manufacturing method thereof, and integrated circuit chip having the same |
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Also Published As
Publication number | Publication date |
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CN103730410A (en) | 2014-04-16 |
TWI579917B (en) | 2017-04-21 |
CN103730410B (en) | 2018-03-20 |
TW201426869A (en) | 2014-07-01 |
USRE47630E1 (en) | 2019-10-01 |
US8907483B2 (en) | 2014-12-09 |
US20140097538A1 (en) | 2014-04-10 |
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