USRE45247E1 - Duty cycle correction circuit of delay locked loop and delay locked loop having the duty cycle correction circuit - Google Patents
Duty cycle correction circuit of delay locked loop and delay locked loop having the duty cycle correction circuit Download PDFInfo
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- USRE45247E1 USRE45247E1 US13/405,703 US201213405703A USRE45247E US RE45247 E1 USRE45247 E1 US RE45247E1 US 201213405703 A US201213405703 A US 201213405703A US RE45247 E USRE45247 E US RE45247E
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- 230000005540 biological transmission Effects 0.000 claims description 59
- 230000000295 complement effect Effects 0.000 claims description 48
- 239000000872 buffer Substances 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 11
- 230000004044 response Effects 0.000 claims description 10
- 230000002401 inhibitory effect Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 4
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L7/00—Automatic control of frequency or phase; Synchronisation
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L7/00—Automatic control of frequency or phase; Synchronisation
- H03L7/06—Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
- H03L7/08—Details of the phase-locked loop
- H03L7/081—Details of the phase-locked loop provided with an additional controlled phase shifter
- H03L7/0812—Details of the phase-locked loop provided with an additional controlled phase shifter and where no voltage or current controlled oscillator is used
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
- H03K5/13—Arrangements having a single output and transforming input signals into pulses delivered at desired time intervals
- H03K5/133—Arrangements having a single output and transforming input signals into pulses delivered at desired time intervals using a chain of active delay devices
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
- H03K5/156—Arrangements in which a continuous pulse train is transformed into a train having a desired pattern
- H03K5/1565—Arrangements in which a continuous pulse train is transformed into a train having a desired pattern the output pulses having a constant duty cycle
Definitions
- the present invention relates to a duty cycle correction circuit of a delay locked loop (DLL) and a delay locked loop including the duty cycle correction circuit, and more particularly to a duty cycle correction circuit including a switching circuit and a delay locked loop (DLL) including the duty cycle correction circuit, for efficiently analyzing the cause of generation of a duty cycle error.
- DLL delay locked loop
- DLL delay locked loop
- a Delay Locked Loop receives an external clock signal input from the outside of a system and generates an internal clock signal synchronized to the external clock signal.
- the system includes logic devices, semiconductor devices, etc., using the internal clock signal.
- the DLL can be utilized in a cache memory device (instead of an SRAM device that is generally used) for increasing a data processing rate between a CPU and DRAM, or applied to a synchronous DRAM, a RAMBUS DRAM®, etc., as well as various types of logic devices.
- Double Data rate (DDR) technique has been developed for improving the bandwidth of a memory system.
- a DDR memory system uses the rising edge and falling edge of the internal clock signal.
- the duty cycle of the internal clock signal is an important factor for maintaining the maximum timing margin in a high performance memory system.
- a duty cycle correction circuit utilized in a DLL is a circuit for correcting the duty cycle of the internal clock signal.
- FIG. 1 is a block diagram of a conventional delay locked loop (DLL).
- the DLL 100 includes a DLL core 110 , a clock buffer 130 , and a duty cycle correction circuit 150 .
- the DLL core 110 receives an external clock signal ECLK and generates an internal clock signal ICLK synchronized to the external clock signal ECLK.
- the clock buffer 130 includes a plurality of serially interconnected inverters 131 , 133 , 135 , . . . , 137 , and buffers the internal clock signal ICLK to generate a reference clock signal CLK and a complementary reference clock signal CLKB.
- the inverter 131 includes one PMOS transistor P 1 and one NMOS transistor N 1 , which are serially connected between a source voltage VDD and a ground voltage VSS.
- the structures of the remaining inverters 133 , 135 , . . . , 137 are the same as that of the inverter 131 .
- the process for generating the reference clock signal CLK and the complementary reference clock signal CLKB is well known in the art.
- the clock buffer 130 can output differential reference clock signals CLK and CLKB having a duty cycle of 50%.
- the duty cycle correction circuit 150 converts the differential reference clock signals CLK and CLKB into duty cycle offset information DCC and DCCB, and feeds back the duty cycle offset information DCC and DCCB to the DLL core 110 .
- the DLL core 110 controls the duty cycle of the internal clock signal ICLK to be exactly 50% in response to the duty cycle offset information DCC and DCCB.
- the duty cycle correction circuit 150 Since the duty cycle correction circuit 150 always operates while the DLL 100 is operating, it is not known whether the differential reference clock signals CLK and CLKB having the 50% duty cycle are generated by the interaction of the clock buffer 130 and the duty cycle correction circuit 150 , or by the greater operation of the clock buffer 130 rather than that of the duty cycle correction circuit 150 .
- a duty cycle correction circuit and a delay locked loop (DLL) including the duty cycle correction circuit where the DLL is capable of controlling its operation in order to correctly analyze the cause of a duty cycle error when a duty cycle error is generated in the DLL.
- DLL delay locked loop
- a duty cycle correction circuit of a delay locked loop comprises: a differential amplifier which receives and amplifies differential reference signals input from a first input terminal and a second input terminal, and outputs differential output signals to a first differential output terminal and a second differential output terminal; a first transmission circuit which is connected between the first differential output terminal and a first node, and transmits a signal of the first differential output terminal to the first node under the control of control signals; a second transmission circuit which is connected between the second differential output terminal and a second node, and transmits a signal of the second differential output terminal to the second node under the control of the control signals; a first storage unit which is connected between the first node and a ground voltage and stores a signal of the first node; a second storage unit which is connected between the second node and the ground voltage and stores a signal of the second node; and a switching circuit which connects the first node to a first output terminal and the second node to a second output terminal under the control of a
- the switching circuit comprises: a third transmission circuit which transmits the signal of the first node to the first output terminal when a switching control signal has a deactivated state; a fourth transmission circuit which transmits the signal of the second node to the second output terminal when the switching control signal has the deactivated state; a first voltage supplying circuit which is connected between the first output terminal and the ground voltage, and supplies the ground voltage to the first output terminal when a switching control signal has an activated state; and a second voltage supplying circuit which is connected between the second output terminal and the ground voltage, and supplies the ground voltage to the second output terminal when the switching control signal has the activated state.
- the first transmission circuit through the fourth transmission circuit each include a PMOS transistor and a NMOS transistor.
- the first storage unit and the second storage unit each include a MOS transistor.
- a delay locked loop comprises: a DLL core which receives an external clock signal and generates an internal clock signal synchronized to the external clock signal; a buffer which buffers the internal clock signal and outputs differential reference clock signals; and a duty cycle correction circuit which generates first control signals having desired offsets corresponding to differences in the duty cycles of each of the differential reference clock signals, and outputs the first control signals to the DLL core under the control of a switching control signal, wherein the DLL core corrects a duty cycle of the internal clock signal under the control of the first control signals, wherein in a duty-cycle error analysis mode, the switching control signal selectively controls the duty cycle correction circuit to inhibit output of the first control signals to the DLL core.
- the delay locked loop further comprises a pad for receiving the switching control signal.
- the delay locked loop further comprises a mode register set for generating the switching control signal.
- a duty cycle correction circuit comprises: input terminal adapted to receive a pair of differential reference clock signals each having a duty cycle; integrating means for integrating each of the reference clock signals to produce a pair of control signals indicating the duty cycles of the differential reference clock signals; and switching means adapted to receive a switching control signal and in response thereto to selectively output the control signals when the switching control signal has a first state and to output a pair of fixed voltage signals when the switching control signal has a second state.
- FIG. 1 is a block diagram of a conventional delay locked loop
- FIG. 2 is a block diagram of a delay locked loop according to a preferred embodiment
- FIG. 3 is a circuit diagram of a duty cycle correction circuit of a delay locked loop, according to a preferred embodiment.
- FIG. 4 is an operation timing chart of the duty cycle correction circuit of the delay locked loop.
- FIG. 2 is a block diagram of a delay locked loop according to a preferred embodiment.
- the delay locked loop (also, referred to as DLL) 200 includes a DLL core 210 , a clock buffer 130 , a duty cycle correction circuit 230 , and a pad 240 .
- the DLL core 210 receives an external clock signal ECLK and generates an internal clock signal ICLK synchronized to the external clock signal ECLK.
- the clock buffer 130 buffers the internal clock signal ICLK and generates differential reference clock signals CLK and CLKB.
- the duty cycle correction circuit 230 generates first control signals DCC and DCCB having desired offsets corresponding to differences between respective duty cycles of the differential reference clock signals CLK and CLKB, and outputs the first control signals DCC and DCCB to the DLL core 210 .
- the generation and subsequent output of the control signals DCC and DCCB is performed under the control of a switching control signal DCC_CTL input from outside of the DLL 200 through the pad 240 .
- the DLL core 210 corrects the duty cycle of the internal clock signal ICLK under the control of the first control signals DCC and DCCB.
- the first control signals DCC and DCCB include duty cycle offset information.
- the switching control signal DCC_CTL can be generated by a mode register set (MRS) or logic register.
- FIG. 3 is a circuit diagram of the duty cycle correction circuit of the delay locked loop, according to a preferred embodiment.
- the duty cycle correction circuit 230 includes a differential amplifier 231 , a transmission circuit 233 , a storage unit 235 , and a switching circuit 237 .
- the differential amplifier 231 receives a reference clock signal CLK input via the gate (hereinafter, referred to as “a first input terminal”) of an NMOS transistor N 11 and a complementary reference clock signal CLKB input via the gate (hereinafter, referred to as “a second input terminal”) of an NMOS transistor N 13 , amplifies the difference between both reference clock signals CLK and CLKB, and outputs the amplified differential output signals to a first differential output node ND 6 and a second differential output node ND 7 , respectively.
- a first input terminal a reference clock signal CLK input via the gate
- CLKB complementary reference clock signal
- the transmission circuit 233 includes a first transmission circuit TG 1 and a second transmission circuit TG 2 .
- the first transmission circuit TG 1 is comprised of a PMOS transistor P 29 and an NMOS transistor N 47 .
- the second transmission circuit TG 2 is comprised of a PMOS transistor P 33 and a NMOS transistor N 51 .
- the first transmission circuit TG 1 is connected between the first differential output terminal ND 6 and a first node ND 8 , and transmits a signal of the first differential output terminal ND 6 to the first node ND 8 under the control of control signals CAP_ON and CAP_ONB.
- the second transmission circuit TG 2 is connected between the second differential output terminal ND 7 and a second node ND 9 , and transmits a signal of the second differential output terminal ND 7 to the second node ND 9 under the control of the control signals CAP_ON and CAP_ONB.
- the control signals CAP-ON and CAP-ONB are complementary signals.
- the storage unit 235 includes a first storage unit N 55 and a second storage unit N 57 .
- the first storage unit N 55 is connected between the first node ND 8 and a ground voltage VSS and stores the signal of the first node ND 8 .
- the first storage unit N 55 is comprised of an NMOS transistor.
- the second storage unit N 57 is connected between the second node ND 9 and the ground voltage VSS and stores the signal of the second node ND 9 .
- the second storage unit N 57 is also comprised of an NMOS transistor.
- the switching circuit 237 connects the first node ND 8 to a first output node ND 10 , and the second node ND 9 to a second output node ND 11 , respectively, under the control of a switching control signal DCC_CTL.
- the switching circuit 237 includes a third transmission circuit TG 3 , a fourth transmission circuit TG 4 , a first voltage supplying circuit N 67 , and a second voltage supplying circuit N 69 .
- the third transmission circuit TG 3 is comprised of a PMOS transistor P 37 and an NMOS transistor N 59 , and transmits the signal of the first node ND 8 to the first output terminal ND 10 when the switching control signal DCC_CTL is in a deactivated state (logic “low”).
- the fourth transmission circuit TG 4 is comprised of a PMOS transistor P 41 and a NMOS transistor N 63 , and transmits the signal of the second node ND 9 to the second output terminal ND 11 when the switching control signal DCC_CTL is in the deactivated state (logic “low”).
- the first voltage supplying circuit N 67 is connected between the first output terminal ND 10 and the ground voltage VSS, and supplies the ground voltage VSS to the first output terminal ND 10 when the switching control signal DCC_CTL is activated (logic “high”).
- the switching control signal DCC_CTL is activated (logic “high”).
- the first voltage supplying circuit N 67 is implemented by an NMOS transistor, then the first output terminal ND 10 is pulled down to the ground voltage VSS when the switching control signal DCC_CTL is activated.
- the second voltage supplying circuit N 69 is connected between the second output terminal ND 11 and the ground voltage VSS, and supplies the ground voltage VSS to the second output terminal ND 11 , when the switching control signal DCC_CTL is in the activated.
- the second voltage supplying circuit N 69 is implemented by a NMOS transistor, then the second output terminal ND 11 is pulled down to the ground voltage VSS when the switching control signal DCC_CTL is activated.
- NMOS transistors N 15 , N 17 , and N 19 and PMOS transistors P 11 , P 13 , and P 15 are turned-on, and accordingly the differential amplifier 231 is operated.
- a mode control signal NAPB is also activated to a “high” level, then the NMOS transistor N 21 is turned-on, and the voltage of the node ND 5 is pulled down to the ground voltage VSS via the turned-on NMOS transistors N 21 and N 19 . Since the voltage of the node ND 5 is pulled down to the ground voltage VSS, a PMOS type capacitor P 17 and PMOS transistors P 19 , P 21 , and P 23 each having a current mirror structure, are turned-on.
- the voltages of nodes ND 1 and ND 2 are differentially amplified by the NMOS transistors N 11 and N 13 , respectively, which are turned-on or turned-off according to the states of the differential reference clock signals CLK and CLKB.
- the amplified signals of the nodes ND 1 and ND 2 are transferred to the first differential output terminal ND 6 and second differential output terminal ND 7 via the turned-on PMOS transistors P 21 and P 23 , respectively.
- Any output terminal being in a “high” level among the differential output terminals ND 6 and ND 7 is changed to a “low” level since a current path to the ground voltage VSS is formed through NMOS transistors N 27 , N 29 , N 39 , and N 41 when they are turned on by the activation of the control signal CAP_ON.
- any output terminal being in a “low” level among the differential output terminals ND 6 and ND 7 is pulled up to a “high” level by a source voltage VDD supplied through the PMOS transistors P 13 , P 15 , P 21 , and P 23 having a current mirror structure, since the current path to the ground voltage VSS is not formed.
- the bias voltage VIAS has a “high” level
- the mode control signal NAPB has a “high” level
- a power reset signal PW_RESET has a “low” level
- a differential signal corresponding to the differential reference clock signals CLK and CLKB is output to the differential output terminals ND 6 and ND 7 , respectively.
- both the mode control signal NAPB and the control signal CAP_ON have “low” levels
- the power reset signal PW_RESET has a “high” level
- the NMOS transistor N 21 is turned-off
- the PMOS transistor P 25 is turned-on
- the voltage of the node ND 5 becomes a “high” level. Therefore, the PMOS type capacitor P 17 and the PMOS transistors P 11 , P 13 , and P 15 having the current mirror structure are turned-off respectively.
- the differential amplifier 231 When the respective NMOS transistors N 27 , N 29 , N 39 , and N 41 are turned-off, the differential amplifier 231 does not operate. At this time, the differential output terminals ND 6 and ND 7 are equalized by the PMOS transistor P 27 .
- the control signal CAP_ON is input into the gates of the NMOS transistors N 47 and N 51 and the gates of the PMOS transistors P 31 and P 35 .
- the complementary control signal CAP_ONB is input into the gates of the NMOS transistors N 49 and N 53 and the gates of the PMOS transistors P 29 and P 33 .
- the NMOS transistor N 49 and PMOS transistor P 31 , and the NMOS transistor N 53 and PMOS transistor P 35 form capacitors.
- the first transmission circuit TG 1 transmits the signal of the first differential output terminal ND 6 to the first node ND 8 under the control of the control signals CAP_ON and CAP_ONB.
- the second transmission circuit TG 2 transmits the signal of the second differential output terminal ND 7 to the second node ND 9 under the control of the control signals CAP_ON and CAP_ONB.
- the first storage unit N 55 stores the signal (voltage) of the first node ND 8 during a predetermined time period
- the second storage unit N 57 stores the signal (voltage) of the second node ND 9 during a predetermined time period.
- the signal transmitted to the first node ND 8 is transferred to the first output terminal ND 10 when the switching control signal DCC_CTL has a “low” level, and also the signal transmitted to the second node ND 9 is transferred to the second output terminal ND 11 when the switching control signal DCC_CTL have the “low” level.
- the switching control signal DCC_CTL has a “high” level
- the third transmission circuit TG 3 is turned-off, the fist output terminal ND 10 is pulled down to the ground voltage VSS, the fourth transmission circuit TG 4 is turned off, and the second output terminal ND 11 is pulled down to the ground voltage VSS.
- the switching control signal DCC_CTL is input into the gates of the respective PMOS transistors P 37 and P 41 , the gates of the respective NMOS transistors N 61 , N 65 , N 67 , and N 69 , and an inverter I 11 .
- the output signal of the inverter I 11 is input into the gates of the PMOS transistors P 39 and P 43 and the gates of the NMOS transistors N 59 and N 63 .
- the NMOS transistor N 61 and PMOS transistor P 39 , and the NMOS transistor N 65 and PMOS transistor P 43 form capacitors, respectively.
- the duty cycle correction circuit 230 is turned on or turned off depending on the status of the switching control signal DCC_CTL.
- FIG. 4 is an operation timing chart of the duty cycle correction circuit of the delay locked loop of FIGS. 2 and 3 .
- the bias voltage VIAS, the mode control signal NAPB, and the control signal CAP_ON all have “high” levels (“H”), and the switching control signal DCC_CTL has a “low” level (“L”).
- the differential amplifier 231 receives and amplifies the reference clock signal CLK input from the first input terminal and the complementary reference clock signal CLKB input from the second input terminal, and outputs the amplified result into the first differential output terminal ND 6 and the second differential output terminal ND 7 , respectively.
- the first storage unit N 55 stores electric charge corresponding to the duty cycle (for example, 45%) of the complementary reference clock signal CLKB, and the second storage unit N 57 stores electric charge corresponding to the duty cycle (for example, 55%) of the reference clock signal CLK.
- a predetermined DC offset is generated between a signal DCCB that is output to the DLL core 210 via the first output terminal ND 10 , and a signal DCC that is output to the DLL core 210 via the second output terminal ND 11 .
- the DLL core 210 corrects the duty cycle of the internal clock signal ICLK in response to the signals DCC and DCCB output from the duty cycle correction circuit 230 . Accordingly, due to repeated interaction between the duty cycle correction circuit 230 and the DLL core 210 , the duty cycle of the reference clock signal CLK becomes 50%. If the duty cycle of the reference clock signal CLK is 50%, then the DC offset is zero. Otherwise, if the duty cycle of the reference clock signal CLK becomes more or less than 50%, then the DC offset increases.
- the switching control signal DCC_CTL is changed to a “high” level (“H”), then the signal of the first node ND 8 is not transmitted to the first output terminal ND 10 , and also the signal of the second node ND 9 is not transmitted to the second output terminal ND 11 .
- the NMOS transistors N 67 and N 69 of the switching circuit 237 are turned-on when the switching control signal DCC_CTL has the high level, the output signal DCCB of the first output terminal ND 10 and the output signal DCC of the second output terminal ND 11 are pulled down to the ground voltage VSS. In this case, the electric charge stored in the first storage unit N 55 and second storage unit N 57 is maintained.
- the switching control signal DCC_CTL is changed to a high level (“H”)
- the duty cycle of the reference clock signal CLK is determined depending on the inverters 131 , 133 , 135 , . . . , 137 constituting the clock buffer 130 .
- the switching control signal DCC_CTL is changed into a low level (“L”), then the signal of the first node ND 8 is transmitted to the first output terminal ND 10 and the signal of the second node ND 9 is transmitted to the second output terminal ND 11 , and the NMOS transistors N 67 and N 69 are turned-off.
- the switching circuit 237 outputs to the DLL core 210 the signals DCC and DCCB just before the switching control signal DCC_CTL is changed to the high level (“H”).
- the DLL core 210 corrects the duty cycle of the internal clock signal ICLK in response to the signals DCC and DCCB output from the duty cycle correction circuit 230 .
- the duty cycle of the reference clock signal CLK becomes exactly 50%, regardless of whether a duty cycle error is generated by the clock buffer 130 , due to the duty cycle correction circuit 230 , and/or due to the clock buffer 130 and duty cycle correction circuit 230 .
- the present invention it is possible to correctly analyze the cause of generation of the duty cycle error when the duty cycle error is generated in a DLL including the duty cycle correction circuit capable of being turned on or turned off. Therefore, in the DLL and the system including the DLL, debugging time can be minimized.
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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US13/405,703 USRE45247E1 (en) | 2003-03-13 | 2012-02-27 | Duty cycle correction circuit of delay locked loop and delay locked loop having the duty cycle correction circuit |
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
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KR10-2003-0015863A KR100510522B1 (en) | 2003-03-13 | 2003-03-13 | Duty cycle correction circuit of delay locked loop and the delay locked loop having the duty cycle correction circuit |
KR2003-15863 | 2003-03-13 | ||
US10/798,484 US7119594B2 (en) | 2003-03-13 | 2004-03-12 | Duty cycle correction circuit of delay locked loop and delay locked loop having the duty cycle correction circuit |
US11/512,155 US7671651B2 (en) | 2003-03-13 | 2006-08-30 | Duty cycle correction circuit of delay locked loop and delay locked loop having the duty cycle correction circuit |
US13/405,703 USRE45247E1 (en) | 2003-03-13 | 2012-02-27 | Duty cycle correction circuit of delay locked loop and delay locked loop having the duty cycle correction circuit |
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US11/512,155 Reissue US7671651B2 (en) | 2003-03-13 | 2006-08-30 | Duty cycle correction circuit of delay locked loop and delay locked loop having the duty cycle correction circuit |
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USRE45247E1 true USRE45247E1 (en) | 2014-11-18 |
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US10/798,484 Expired - Lifetime US7119594B2 (en) | 2003-03-13 | 2004-03-12 | Duty cycle correction circuit of delay locked loop and delay locked loop having the duty cycle correction circuit |
US11/512,155 Ceased US7671651B2 (en) | 2003-03-13 | 2006-08-30 | Duty cycle correction circuit of delay locked loop and delay locked loop having the duty cycle correction circuit |
US13/405,703 Expired - Lifetime USRE45247E1 (en) | 2003-03-13 | 2012-02-27 | Duty cycle correction circuit of delay locked loop and delay locked loop having the duty cycle correction circuit |
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US10/798,484 Expired - Lifetime US7119594B2 (en) | 2003-03-13 | 2004-03-12 | Duty cycle correction circuit of delay locked loop and delay locked loop having the duty cycle correction circuit |
US11/512,155 Ceased US7671651B2 (en) | 2003-03-13 | 2006-08-30 | Duty cycle correction circuit of delay locked loop and delay locked loop having the duty cycle correction circuit |
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KR (1) | KR100510522B1 (en) |
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US7227809B2 (en) * | 2005-10-14 | 2007-06-05 | Micron Technology, Inc. | Clock generator having a delay locked loop and duty cycle correction circuit in a parallel configuration |
US7423465B2 (en) | 2006-01-27 | 2008-09-09 | Micron Technology, Inc. | Duty cycle error calculation circuit for a clock generator having a delay locked loop and duty cycle correction circuit |
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KR100817081B1 (en) * | 2007-01-11 | 2008-03-26 | 삼성전자주식회사 | Apparatus for preventing the lock failure and delay locked loop thereof |
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JP2009089391A (en) | 2007-09-28 | 2009-04-23 | Hynix Semiconductor Inc | Flip-flop and duty ratio correction circuit using same |
KR100903371B1 (en) * | 2007-11-02 | 2009-06-23 | 주식회사 하이닉스반도체 | Duty cycle detector and detecting method |
KR101013444B1 (en) * | 2008-03-14 | 2011-02-14 | 주식회사 하이닉스반도체 | Duty Cycle Correction Apparatus and Semiconductor Integrated Circuit having the Same |
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US9954517B2 (en) | 2012-11-06 | 2018-04-24 | Micron Technology, Inc. | Apparatuses and methods for duty cycle adjustment |
US9413338B2 (en) | 2014-05-22 | 2016-08-09 | Micron Technology, Inc. | Apparatuses, methods, and circuits including a duty cycle adjustment circuit |
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US9564897B1 (en) | 2015-10-06 | 2017-02-07 | Samsung Electronics Co., Ltd | Apparatus for low power high speed integrated clock gating cell |
US9762211B2 (en) | 2015-11-03 | 2017-09-12 | Samsung Electronics Co., Ltd | System and method for adjusting duty cycle in clock signals |
JP2019169826A (en) * | 2018-03-23 | 2019-10-03 | 東芝メモリ株式会社 | Correction circuit |
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2003
- 2003-03-13 KR KR10-2003-0015863A patent/KR100510522B1/en not_active IP Right Cessation
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2004
- 2004-03-12 US US10/798,484 patent/US7119594B2/en not_active Expired - Lifetime
-
2006
- 2006-08-30 US US11/512,155 patent/US7671651B2/en not_active Ceased
-
2012
- 2012-02-27 US US13/405,703 patent/USRE45247E1/en not_active Expired - Lifetime
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US6643790B1 (en) | 2000-03-06 | 2003-11-04 | Rambus Inc. | Duty cycle correction circuit with frequency-dependent bias generator |
US7171575B1 (en) | 2000-03-06 | 2007-01-30 | Actel Corporation | Delay locked loop for and FPGA architecture |
US6628556B2 (en) | 2000-08-31 | 2003-09-30 | Micron Technology, Inc. | Circuit configuration for controlling signal propagation in fabricated devices |
US6680637B2 (en) | 2001-12-18 | 2004-01-20 | Samsung Electronics Co., Ltd. | Phase splitter circuit with clock duty/skew correction function |
US6853225B2 (en) | 2001-12-21 | 2005-02-08 | Hynix Semiconductor Inc. | Delay locked loop circuit with duty cycle correction function |
US6963235B2 (en) | 2001-12-21 | 2005-11-08 | Hynix Semiconductor Inc. | Delay locked loop circuit with duty cycle correction function |
US7116149B2 (en) | 2003-05-22 | 2006-10-03 | Samsung Electronics, Co., Ltd. | Duty cycle correction circuit of delay locked loop and the delay locked loop having the duty cycle correction circuit |
Also Published As
Publication number | Publication date |
---|---|
KR20040081529A (en) | 2004-09-22 |
US7671651B2 (en) | 2010-03-02 |
US7119594B2 (en) | 2006-10-10 |
KR100510522B1 (en) | 2005-08-26 |
US20060290397A1 (en) | 2006-12-28 |
US20040178835A1 (en) | 2004-09-16 |
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