USRE42636E1 - Window for gallium nitride light emitting diode - Google Patents

Window for gallium nitride light emitting diode Download PDF

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Publication number
USRE42636E1
USRE42636E1 US12/662,196 US66219610A USRE42636E US RE42636 E1 USRE42636 E1 US RE42636E1 US 66219610 A US66219610 A US 66219610A US RE42636 E USRE42636 E US RE42636E
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Prior art keywords
layer
window
current spreading
light emitting
electrode
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US12/662,196
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John Chen
Bingwen Liang
Robert Shih
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Dalian Lumei Optoelectronics Corp
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Dalian Lumei Optoelectronics Corp
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Assigned to AXT, INC. reassignment AXT, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: AMERICAN XTAL TECHNOLOGY, INC.
Assigned to LUMEI OPTOELECTRONICS CORP. reassignment LUMEI OPTOELECTRONICS CORP. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: AXT, INC.
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN

Definitions

  • the present invention relates to an improved window for a gallium nitride (GaN)-based light-emitting diode (LED).
  • GaN gallium nitride
  • LED light-emitting diode
  • a semiconductor light-emitting diode includes a substrate, a light emitting region, a window structure, and a pair of electrodes for powering the diode.
  • the substrate may be opaque or transparent.
  • Light-emitting diodes which are based on gallium nitride (GaN) compounds generally include a transparent, insulating substrate, i.e., a sapphire substrate. With a transparent substrate, light may be utilized from either the substrate or from the opposite end of the LED which is termed the “window”.
  • the amount of light generated by an LED is dependent on the distribution of the energizing current across the face of the light emitting region. It is well known in semiconductor technology that the current flowing between the electrodes tends to concentrate in a favored path directly under the electrode. This current flow tends to activate corresponding favored portions of the light-emitting region to the exclusion of portions which fall outside the favored path. Further since such favored paths fall under the opaque electrode, the generated light reaching the electrode is lost.
  • Prior art GaN LEDs have employed conductive current spreading layers formed of nickel/gold (Ni/Au), and have a gold (Au) window bond pad mounted on such layers. In such arrangements, the Ni/Au layer and/or the Au bond pad tend to peel during the wire bonding operation to the pad.
  • the window structure which includes a very thin, semi-transparent nickel oxide/gold (NiO x /Au) contact layer formed on a p-doped nitride compound window layer; a semi-transparent amorphous conducting top window layer; and a p electrode structure formed of a titanium layer with a covering Au bond pad.
  • the amorphous top layer may be formed of indium tin oxide (ITO), tin oxide (TO), or zinc oxide (ZnO). Layers of other amorphous, conductive, and semi-transparent oxide compounds also may be suitable for construction of the top window layer.
  • the thin NiO x /Au layer provides an excellent ohmic connection to both the amorphous current spreading conducting layer and to the magnesium (Mg)-doped GaN window layer.
  • the highly conductive amorphous layer efficiently spreads current flowing between the electrodes across the light-emitting region to improve the efficiency of the device.
  • the titanium electrode passes through both the amorphous conducting layer and the underlying Ni/Au to: (a) form an ohmic contact with those layers; (b) contact the p-doped top widow layer and form a Schottky diode connection therewith; and (c) provide good adhesion between the titanium (Ti) and the magnesiusm (Mg)-doped window layer.
  • the Schottky diode connection forces current from the electrode into the amorphous conducting layer and eliminates the tendency of the prior art structures to concentrate current in a path directly under the electrode.
  • the FIGURE is a schematic depicting a cross-sectional view of an LED according to one embodiment consistent with the present invention.
  • the Figure depicts an LED according to one embodiment consistent with the present invention, as a GaN-based device in which light exits through window 109 .
  • the LED of the Figure includes a sapphire substrate 101 , buffer region 102 , GaN substitute substrate layer 103 , n cladding layer 104 , active region 106 , p cladding layer 107 , window layers 108 , 109 , n electrode 105 , and a window structure which includes window layers 108, 109, a thin NiO x /Au semi-transparent layer 110 , a semi-transparent amorphous conducting layer 111 , a titanium electrode 112 , and a bond pad 113 .
  • Layers 101 through 104 , and layers 106 through 109 are grown in a Metal Organic Chemical Vapor Deposition (MOCVD) reactor.
  • MOCVD Metal Organic Chemical Vapor Deposition
  • the remaining components of the illustrative LED namely, layers NiO x /Au layer 110 , amorphous conducting layer 111 , n electrode 105 , p electrode 112 , and bond pad 113 , are formed by evaporation in an apparatus other than a MOCVD reactor. Such processes are well known in the semiconductor industry and are not described herein.
  • the illustrative light-emitting structure of the Figure includes an n cladding layer 104 , active region 106 , and p cladding layer 107 .
  • the n cladding layer 104 is formed of silicon-doped GaN.
  • active region 106 is a silicon-doped n-type gallium indium nitridie/gallium nitride (GaInN/GaN) multi-quantum well (MQW) structure.
  • GaInN/GaN gallium indium nitridie/gallium nitride
  • MQW multi-quantum well
  • the p cladding layer 107 is formed of Mg-doped aluminum gallium nitride (AlGaN).
  • the first window layer 108 is formed of Mg-doped GaN.
  • the window layer 108 has a nominal thickness of 300 nm.
  • the second window layer 109 is similarly formed of Mg-doped GaN. However, window layer 109 is more highly doped to permit an ohmic contact between layer 109 and the very thin NiO x /Au layer 110 .
  • the resulting product exhibits the expected desired physical and electrical characteristics.
  • Layer 110 is a very thin, semi-transparent contact layer of NiO x /Au which is deposited over the entire exposed face of window layer 109 . Opening 114 is formed in layers 110 and 111 to permit the deposit of a titanium adhesion layer 112 to contact window layer 109 . Titanium forms a strong physical bond with layer 109 and thus tends to eliminate peeling during wire bonding. In addition to reaching through to layer 109 , titanium structure 112 is deposited through and on top of amorphous layer 111 . Titanium electrode 112 forms ohmic contacts with layers 110 and 111 , and forms a Schottky diode contact with window layer 109 . The Schottky diode connection to window layer 109 eliminates the current path directly under the electrode and forces current flowing between the electrodes into conducting layer 111 .
  • the p electrode Au bond pad 113 is deposited on top of titanium layer 112 to form an ohmic contact.
  • Ni/Au layer 111 110 and the Ti and Au contact structures are heated in an atmosphere of molecular nitrogen and air.
  • the Ni is converted to a form of nickel oxide.
  • the described heat treatment improves the quality of the contact structures.

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Abstract

A window structure for a gallium nitride (GaN)-based light emitting diode (LED) includes a Mg+ doped p window layer of a GaN compound; a thin, semi-transparent metal contact layer; and an amorphous current spreading layer formed on the contact layer. The contact layer is formed of NiOx/Au and the current spreading layer is formed of Indium Tin Oxide. The p electrode of the diode includes a titanium adhesion layer which forms an ohmic connection with the current spreading layer and a Schottky diode connection with the Mg+ doped window layer.

Description

The present invention relates to an improved window for a gallium nitride (GaN)-based light-emitting diode (LED).
BACKGROUND OF THE INVENTION
A semiconductor light-emitting diode (LED) includes a substrate, a light emitting region, a window structure, and a pair of electrodes for powering the diode. The substrate may be opaque or transparent. Light-emitting diodes which are based on gallium nitride (GaN) compounds generally include a transparent, insulating substrate, i.e., a sapphire substrate. With a transparent substrate, light may be utilized from either the substrate or from the opposite end of the LED which is termed the “window”.
The amount of light generated by an LED is dependent on the distribution of the energizing current across the face of the light emitting region. It is well known in semiconductor technology that the current flowing between the electrodes tends to concentrate in a favored path directly under the electrode. This current flow tends to activate corresponding favored portions of the light-emitting region to the exclusion of portions which fall outside the favored path. Further since such favored paths fall under the opaque electrode, the generated light reaching the electrode is lost. Prior art GaN LEDs have employed conductive current spreading layers formed of nickel/gold (Ni/Au), and have a gold (Au) window bond pad mounted on such layers. In such arrangements, the Ni/Au layer and/or the Au bond pad tend to peel during the wire bonding operation to the pad.
SUMMARY OF THE INVENTION
In one embodiment consistent with the present invention, light is utilized at the output of the window structure, which includes a very thin, semi-transparent nickel oxide/gold (NiOx/Au) contact layer formed on a p-doped nitride compound window layer; a semi-transparent amorphous conducting top window layer; and a p electrode structure formed of a titanium layer with a covering Au bond pad. The amorphous top layer, by way of example, may be formed of indium tin oxide (ITO), tin oxide (TO), or zinc oxide (ZnO). Layers of other amorphous, conductive, and semi-transparent oxide compounds also may be suitable for construction of the top window layer.
Advantageously, the thin NiOx/Au layer provides an excellent ohmic connection to both the amorphous current spreading conducting layer and to the magnesium (Mg)-doped GaN window layer. The highly conductive amorphous layer efficiently spreads current flowing between the electrodes across the light-emitting region to improve the efficiency of the device.
Additionally, the titanium electrode passes through both the amorphous conducting layer and the underlying Ni/Au to: (a) form an ohmic contact with those layers; (b) contact the p-doped top widow layer and form a Schottky diode connection therewith; and (c) provide good adhesion between the titanium (Ti) and the magnesiusm (Mg)-doped window layer. The Schottky diode connection forces current from the electrode into the amorphous conducting layer and eliminates the tendency of the prior art structures to concentrate current in a path directly under the electrode.
BRIEF DESCRIPTION OF THE DRAWING
The FIGURE is a schematic depicting a cross-sectional view of an LED according to one embodiment consistent with the present invention.
 DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
The Figure depicts an LED according to one embodiment consistent with the present invention, as a GaN-based device in which light exits through window 109.
The LED of the Figure includes a sapphire substrate 101, buffer region 102, GaN substitute substrate layer 103, n cladding layer 104, active region 106, p cladding layer 107, window layers 108, 109, n electrode 105, and a window structure which includes window layers 108, 109, a thin NiOx/Au semi-transparent layer 110, a semi-transparent amorphous conducting layer 111, a titanium electrode 112, and a bond pad 113.
Layers 101 through 104, and layers 106 through 109, are grown in a Metal Organic Chemical Vapor Deposition (MOCVD) reactor. The details of MOCVD growth of the stated layers are well known in the semiconductor industry and will not be discussed herein.
The remaining components of the illustrative LED, namely, layers NiOx/Au layer 110, amorphous conducting layer 111, n electrode 105, p electrode 112, and bond pad 113, are formed by evaporation in an apparatus other than a MOCVD reactor. Such processes are well known in the semiconductor industry and are not described herein.
The Light-emitting Structure
The illustrative light-emitting structure of the Figure includes an n cladding layer 104, active region 106, and p cladding layer 107.
The n cladding layer 104 is formed of silicon-doped GaN.
In the illustrative example depicted by the Figure, active region 106 is a silicon-doped n-type gallium indium nitridie/gallium nitride (GaInN/GaN) multi-quantum well (MQW) structure. However, other forms of active regions may be utilized with the illustrative window structure.
The p cladding layer 107 is formed of Mg-doped aluminum gallium nitride (AlGaN).
The Window Layers
The first window layer 108 is formed of Mg-doped GaN. The window layer 108 has a nominal thickness of 300 nm.
The second window layer 109 is similarly formed of Mg-doped GaN. However, window layer 109 is more highly doped to permit an ohmic contact between layer 109 and the very thin NiOx/Au layer 110.
Completion of the MOCVD Growth Process
Growth of the p-type GaN layers is achieved with the introduction of gaseous flows of TMG with hydrogen (H2) as a carrier gas, NH3 as a group V material, and Mg as a dopant. In the absence of an appropriate cool down protocol, hydrogen passivation of the Mg may occur, in which case, the conductivity of the Mg-doped layer is reduced.
In order to avoid hydrogen passivation of the Mg-doped layers 107, 108, and 109, the following described cool-down protocol has been adopted upon completion of the MOCVD growth.
    • 1. The ambient gas of the reactor is switched from H2 to nitrogen (N2) immediately after completion of the LED structure;
    • 2. The reactor temperature is ramped down from the growth temperature to about 900 degrees C. in about 2 minutes;
    • 3. The flow of NH3 is terminated;
    • 4. The reactor temperature is further ramped down to about 750 degrees C. in about 2 minutes;
    • 5. A temperature of about 750 degrees C. is held for about 20 minutes;
    • 6. The heater of the reactor is shut off and the reactor is allowed to complete cool-down naturally. Experience shows that cool-down to 120 degrees C. occurs in about 30 minutes after heater shut off.
The resulting product exhibits the expected desired physical and electrical characteristics.
Formation of the Electrode Structures
The embodiment consistent with the present invention as depicted by the Figure, illustrates the locations of both p electrode layers 111, 112 and n electrode 105.
Layer 110 is a very thin, semi-transparent contact layer of NiOx/Au which is deposited over the entire exposed face of window layer 109. Opening 114 is formed in layers 110 and 111 to permit the deposit of a titanium adhesion layer 112 to contact window layer 109. Titanium forms a strong physical bond with layer 109 and thus tends to eliminate peeling during wire bonding. In addition to reaching through to layer 109, titanium structure 112 is deposited through and on top of amorphous layer 111. Titanium electrode 112 forms ohmic contacts with layers 110 and 111, and forms a Schottky diode contact with window layer 109. The Schottky diode connection to window layer 109 eliminates the current path directly under the electrode and forces current flowing between the electrodes into conducting layer 111.
The p electrode Au bond pad 113 is deposited on top of titanium layer 112 to form an ohmic contact.
Since the Mg-doped layers do not suffer from hydrogen passivation, it is not necessary to heat treat the structure to activate the Mg doping in those layers. However, Ni/Au layer 111 110 and the Ti and Au contact structures are heated in an atmosphere of molecular nitrogen and air. Thus, the Ni is converted to a form of nickel oxide. The described heat treatment improves the quality of the contact structures.
The invention has been described with particular attention to its preferred embodiment. However, it should be understood that variations and modifications within the spirit and scope of the invention may occur to those skilled in the art to which the invention pertains.

Claims (9)

1. A light emitting diode comprising:
a substrate;
a light emitting region;
a window structure; and
first and second electrodes;
wherein said window structure comprises comprising:
an Mg+ doped window layer;
a semi-transparent metal NiOx/Au contact layer, disposed on said Mg+ doped window layer; and
a semi-transparent, conductive amorphous current spreading layer formed directly on an exposed face of said contact layer; and
wherein an opening is formed through said contact layer and said current spreading layer and said first electrode comprises a layer of titanium formed on said current spreading layer and through said opening to contact an upper surface of said Mg+ doped window layer.
a first electrode having a layer of titanium and formed on said current spreading layer and forming an ohmic connection with said current-spreading layer;
a second electrode; and
an opening formed through said contact layer and said current spreading layer, such that said layer of titanium of said first electrode contacts an upper surface of said Mg+ doped window layer.
2. The light emitting diode in accordance with claim 1,
wherein said contact layer is a NiOx/Au layer.
3. The light emitting diode in accordance with claim 1,
wherein said amorphous current spreading layer is formed of Indium Tin Oxide.
4. The light emitting diode diode in accordance with claim 2,
wherein said amorphous current spreading layer is formed of Indium Tin Oxide.
5. The light emitting diode in accordance with claim 1,
wherein said window structure comprises:
a Mg+ doped further window layer; and
wherein said Ni/Au contact layer is formed on said Mg+ doped window layer and said first electrode forms an ohmic connection with said current spreading layer.
6. The light emitting diode in accordance with claim 5,
wherein said first electrode forms a Schottky diode connection with said Mg+ doped window layer.
7. The light emitting diode in accordance with claim 2,
wherein after heat treatment, said contact layer comprises
a Ni oxide/Au layer.
8. A light emitting diode comprising:
a substrate;
a light emitting region;
a window structure; and
first and second electrodes;
wherein said window structure comprises:
an Mg+ doped window layer;
a semi-transparent NiOx/Au contact layer formed on said Mg+ doped window layer; and
a semi-transparent, conductive amorphous current spreading layer formed of indium tin oxide directly on an exposed face of said contact layer;
wherein said first electrode forms an ohmic connection with said current spreading layer;, and forms a Schottky diode connection with said Mg+ doped window layer;
wherein an opening is formed through said contact layer and said current spreading layer; and
wherein said first electrode comprises a layer of titanium formed on said current spreading layer and through said opening to contact an upper surface of said Mg+ doped window layer.
9. A light emitting diode comprising:
a substrate;
a buffer region;
a GaN substitute substrate layer;
an n cladding layer;
an active region;
a p cladding layer;
a double window layer structure;
an n electrode;
a window structure comprising:
a double window layer structure;
a semi-transparent metal contact layer,; and
a semi-transparent, conductive amorphous current spreading layer formed directly on an exposed face of said contact layer;
a titanium electrode; and
a bond pad;
wherein an opening is formed through said contact layer and said current spreading layer to said double window layer structure for said titanium electrode, such that said titanium electrode contacts an upper surface of said double window layer structure.
US12/662,196 2000-07-26 2010-04-05 Window for gallium nitride light emitting diode Expired - Lifetime USRE42636E1 (en)

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