USRE42232E1 - RF chipset architecture - Google Patents
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- USRE42232E1 USRE42232E1 US11/376,700 US37670006A USRE42232E US RE42232 E1 USRE42232 E1 US RE42232E1 US 37670006 A US37670006 A US 37670006A US RE42232 E USRE42232 E US RE42232E
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- 239000000758 substrate Substances 0.000 claims description 29
- 230000001413 cellular effect Effects 0.000 claims description 26
- 239000004065 semiconductor Substances 0.000 claims description 8
- 238000003384 imaging method Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 description 21
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 13
- 229920005591 polysilicon Polymers 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000002784 hot electron Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 238000004891 communication Methods 0.000 description 4
- 239000007943 implant Substances 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 230000037361 pathway Effects 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823814—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0922—Combination of complementary transistors having a different structure, e.g. stacked CMOS, high-voltage and low-voltage CMOS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66659—Lateral single gate silicon transistors with asymmetry in the channel direction, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
Definitions
- This invention relates to the field of wireless integrated circuits.
- Chip designers work on many fronts to find ways to make the circuitry found inside devices such as cellular phones smaller, cheaper, easier to fabricate, less power-hungry, and more reliable.
- RF radio frequency
- U.S. Pat. No. 6,049,702 shows a block diagram of the RF/analog and analog/digital (A/D) interface circuitry of a basic transceiver, which can be combined with other components (not shown) to form a complete transceiver.
- A/D analog/digital
- the transmitter portion of the transceiver includes digital-to-analog converters (DACs), low-pass filters for filtering the outputs of DACs, respectively, and a modulator that performs a frequency conversion on signals received at its inputs and which is driven by a phase-locked loop (PLL) circuit that includes a reference voltage-controlled-oscillator (VCO) and a resonator (tank circuit).
- PLL phase-locked loop
- VCO reference voltage-controlled-oscillator
- tank circuit resonator
- the receiver portion is connected to the other side of T/R switch.
- Incoming signals are received by the antenna and filtered by the bandpass filter before being fed to a low-noise amplifier (LNA)/demodulator circuit.
- LNA low-noise amplifier
- the output of the circuit's LNA is passed through a bandpass filter before being fed to a demodulator which performs a frequency conversion on the signal received by antenna.
- the demodulator is driven by a PLL circuit which includes a reference VCO and a tank circuit.
- the demodulator output drives an intermediate-frequency automatic gain control (IF AGC) stage, with a bandpass filter interposed between the stage's IF amplifier and its AGC circuitry.
- IF AGC intermediate-frequency automatic gain control
- the AGC output is fed to an IF demodulator which is driven by a PLL circuit that includes a reference VCO and a tank circuit.
- the IF demodulator's two outputs are passed through respective low-pass filters before being fed to respective analog-to-digital converters (ADCs).
- ADCs analog-to-digital converters
- DACs Digital CMOS circuits
- the modulator, LNA/demodulator, IF/AGC stage, and IF demodulator generally use bipolar junction transistors (BJTs).
- BJTs bipolar junction transistors
- the power amplifier can be fabricated on a gallium arsenide (GaAs) substrate, particularly for a high-power application such as a cellular phone Bandpass, lowpass filters, as well as tank circuits, and antenna are generally built with discrete components.
- GaAs gallium arsenide
- T/R switch is also typically made from discrete components, or are made from costly, complex PIN diode circuits if integrated.
- a CDMA or WCDMA RF front end typically consists of two ICs. There is a receive IC and a transmit IC, which need to be on separate pieces of silicon to isolate the low power received signal (around 10 mW) from the high power send signal (around 300 mW).
- a processor IC to control the RF front-end, the electronic of an RF system requires three chips: a processor IC, a receive IC, and a transmit IC.
- a set of radio frequency (RF) integrated circuits includes a transmit chip having a power amplifier and a receive chip adapted to work with the transmit chip.
- the receive chip has one or more low noise amplifiers to receive RF signals, and a processor coupled to the low noise amplifiers, the processor transmitting data through the transmit chip and receiving data from the on-chip low noise amplifiers.
- a radio frequency transceiver system in another aspect, includes a transmit chip; and a receive chip having a transistor device.
- the transistor device includes a layer of gate oxide on a surface of the semiconductor substrate, a gate electrode formed on the surface of the gate oxide, the gate electrode having a drain side; a p-well implanted within a semiconductor substrate under the gate electrode; an n-well implanted in the p-well on the drain side; an n+ source region in the p-well outside of the n-well; an n+ drain region within the substrate inside the n-well; and lightly doped regions extending respectively from the source and drain regions toward the gate electrode.
- Implementations of the device may include one or more of the following.
- the n-well extends slightly under the gate electrode.
- the p-well is deeper than the n-well.
- a second device can be fabricated adjacent the first device with a second gate electrode formed on the surface of the gate oxide; a second n-well implanted within a semiconductor substrate under the second gate electrode; a p+ source region in the second n-well; and a p+ drain region within the substrate inside the second n-well
- the second n-well is adjacent the p-well.
- the first and second n-wells are formed at the same time.
- the device can be used in digital circuits that operate next to sensitive analog circuits such as CMOS imaging elements, precision analog-digital converters, or radio frequency circuits
- a method for manufacturing a two-chip radio frequency transceiver system with a receive chip having a transistor device includes implanting a p-well in a substrate; implanting an n-well in the p-well; growing a gate oxide above the p-well; forming a polysilicon layer on the gate oxide; implanting a p+ region in the substrate; and implanting an n+ region in the substrate.
- Implementations of the above aspect may include one or more of the following.
- the method includes forming lightly doped regions extending respectively from the source and drain regions toward the gate electrode.
- the method also includes forming an isolation layer between the substrate and the gate oxide.
- the method includes patterning the polysilicon layer.
- the method also includes patterning the p+ region and the n+ region.
- the method forms robust devices that can used in digital circuitry adjacent analog circuitry.
- the analog circuit can be imaging elements, analog to digital converters or a radio frequency circuits, among others.
- the system is a 2 chip solution instead of a 3 chip solution, saving weight, cost, and board real-estate. These advantages are important for mobile applications such as handheld computers and cellular telephones, among others.
- the baseband chip has several process steps that can be used to enhance the performance of a low-power RF detector. For example, as discussed below, the circuits use implants that can reduce hot electrons, and also a very thin oxide layer that can be used to make low voltage high performance transistors.
- the system also uses reliable and inexpensive MOSFETs.
- the MOSFETs can be used in mixed-mode integrated circuits (ICs) that include both digital and analog circuits on a single chip.
- the device reduces the magnitude of electric field seen along the channel near the drain of an MOS device, especially in digital transistors which switch at high frequency.
- the device also avoids the hot electron injection problem without creating sharp curvatures on the junction and without an additional long drive-in time that can cause undesired thermal effects in the other parts of the device.
- the resultant low junction curvature increases the breakdown voltage, making it possible to operate the transistor at higher biases without catastrophic failure.
- the inventive process also forms source/drain regions having low series resistance and a large junction radius, and which does not require additional masking or heating steps.
- FIG. 1 shows a two chip set of radio frequency (RF) integrated circuits.
- FIG. 2 illustrates an exemplary completed MOSFET structure.
- FIG. 3 shows an exemplary process for making an MOSFET with a highly scalable conduction channel length.
- FIG. 4 is a block diagram of a portable appliance using the transistor of FIG. 2 .
- an RF transceiver solution is provided using only two chips: one chip (transmit chip) contains high power transmit circuitry, while the second chip (baseband chip) contains low power RF signal receive/sense circuit, a digital processor and related logic circuits.
- FIG. 1 shows a two chip set of radio frequency (RF) integrated circuits includes a transmit chip 10 having power amplifiers 12 and 14 whose outputs are connected to an antenna switch 16 that in turn is connected to an antenna 30 .
- the power amplifiers 12 and 14 are connected to oscillators 20 and 22 that provide RF signals for each RF protocol that the transmitter handles. For instance, a 2.4 GHz oscillator is used as the oscillator 20 , while a 1.8 GHz oscillator is used as the oscillator 22 .
- the oscillators 20 and 22 in turn is controlled by a programmable gain adjustment (PGA) circuit 24 .
- the power amplifiers 12 and 14 are also enabled or disabled by a transmit/receive switch 26 .
- the PGA 24 and the switch 26 are connected to a processor 60 in a receive chip 40 .
- the receive chip 40 is adapted to work with the transmit chip.
- the receive chip 40 receives signals from the antenna 30 through a digitally programmable filter 42
- the output of the filter 42 is provided to a multiplexer switch 44 .
- the RF signal is routed through the multiplexer switch 44 to one or more low noise amplifiers 46 , whose outputs are provided to a mixer 48 .
- the mixer receives reference signals from a programmable local oscillator 50 .
- the output of the mixer 48 is provided to a second digitally programmable filter 52 and is digitized by a data conversion circuit 54 .
- the digitized signal is provided to a MAC 56 and a PHY 58 .
- the PHY 58 in turn communicates with the processor 60
- the processor 60 is connected to all blocks on the receive chip 40 and to the PGA circuit 24 and transmit receive switch 26 on the transmit chip 10 .
- CMOS transistors which at 0.1 um are reaching Q factors of 10 or more, so good resonators can be built with these transistors.
- the baseband chip has several process steps that can be used to enhance the performance of a low-power RF detector. For example, as discussed below, the circuits use implants that can reduce hot electrons, and also a very thin oxide layer that can be used to make low voltage high performance transistors. The end result is a 2 chip solution instead of a 3 chip solution.
- FIG. 2 illustrates one FET of a large scale integrated circuit fabricated in accordance with the process of the present invention, the FET device being generally identified by the reference numeral 100 .
- the substrate region 102 of the device is a silicon material lightly doped with a p-type material, such as boron, and designated as a p-substrate.
- a gate 104 is separated from the silicon substrate 102 by a layer of silicon dioxide 1115 .
- a channel region above the p-substrate region 102 and below the gate 104 is slightly more heavily doped p-type material than substrate 102 and is designated as a p-well 132 .
- a source 108 and drain 120 are formed by heavily doping a region of the p-well 132 on opposite sides of the gate 104 with an n-type material and designated as a n+ regions 110 and 116 .
- Lightly doped drain (LDD) structures 112 and 118 created by implanting shallow n ⁇ , forming oxide spacers 117 adjacent to the polysilicon layer 105 , and implanting the n+.
- the n+ region 116 and its LDD structure 118 are placed in an n-well 130 .
- the n-well 130 in turn is positioned in a p-well 132 .
- the n+ region 110 and its LDD 112 are also positioned in the p-well 132 .
- This device is known as an NMOS device and it is this device that suffers from hot electron injection.
- the p-well 132 is adjacent to an n-well 162 , which contains two p+ regions 164 and 166 .
- a polysilicon layer 168 is deposited above the silicon dioxide layer 115 to form a gate.
- the layer of polysilicon material is next implanted with phosphorous, an N-type material.
- the layer of polysilicon material implanted with phosphorous is then oxidized with a layer of silicon dioxide. This device is commonly known as a PMOS device, and it typically does not suffer from hot electron problems.
- FIG. 3 shows an exemplary method 200 for fabricating the FET of FIG. 2 .
- the silicon surface is prepared and the layer of silicon dioxide 115 , approximately 80 angstroms thick, is grown atop the substrate 102 (step 202 ).
- p-well regions are implanted (step 204 ).
- n-well regions are implanted in the surface (step 206 ).
- the p-well regions are deeper than the n-well regions and one n-well region is implanted within one of the p-well regions.
- An isolation layer is placed and patterned (step 210 ).
- a gate oxide is grown and patterned (step 212 ).
- the gate oxide layer 115 can be formed through any suitable process, such as by chemical vapor deposition (CVD). In an alternative embodiment, the gate oxide is thermally grown on the substrate 102 .
- the polysilicon layer 115 is formed and patterned (step 214 ).
- the layer of undoped polysilicon is deposited on the top surface of gate oxide 104 and can be deposited by any suitable method, such as by CVD.
- the upper surface of the structure can be planarized through chemical mechanical polishing (CMP).
- the patterning process involves photoresist is deposited as a continuous layer on polysilicon and selectively irradiated using a photolithographic system, such as a step and repeat optical projection system, in which I-line ultraviolet light from a mercury-vapor lamp is projected through a first reticle and a focusing lens to obtain an image pattern. Thereafter, the photoresist is developed and the irradiated portions of the photoresist are removed to provide openings in photoresist. The openings expose portions of polysilicon layer to an etch, thereby defining a gate region. An anisotropic etch is applied that removes the exposed portions of polysilicon 105 .
- a photolithographic system such as a step and repeat optical projection system, in which I-line ultraviolet light from a mercury-vapor lamp is projected through a first reticle and a focusing lens to obtain an image pattern.
- the photoresist is developed and the irradiated portions of the photoresist are removed to provide openings in photoresist
- the gate region 104 includes: the polysilicon layer 105 on top of the gate oxide 115 on top of the substrate 102 .
- the photoresist is stripped, using conventional photoresist stripping techniques.
- the source region 108 and a drain region 120 are provided by implanting ion dopants into the top of the substrate 102 (step 224 ).
- the ion implantation uses conventional ion implanting techniques.
- the source and drain LDD regions 112 and 118 respectively include the phosphorous-doped silicon material.
- the gate 104 behaves as an implant mask and provides for self-aligned source and drain LDD regions, 112 and 118 respectively.
- the p+ region is also placed using conventional process.
- a high temperature rapid thermal anneal is conducted in the presence of Arsenic (As) gas (step 226 ). This process cures out the crystal damage induced by the previous ion implant process. Additionally, the annealing step is performed in the presence of As gas. The presence of the As gas causes an additional doping implantation into the substrate 102 . An oxide layer is subsequently deposited and etched anisotropically, resulting in spacers 117 next to the poly gate 105 .
- n+ source/drain regions 110 and 116 are formed in the pwell 132 , next to the spacers 117 , in the region where the gate oxide 115 has been etched back These highly doped regions form electrical connections to the drain/source electrodes, 108 and 120 respectively.
- step 228 salicide contacts are formed on the gate 104 , source 108 , drain 120 and lightly doped regions 112 and 118 (step 228 ). Additionally contact formation, not included here, is achieved using conventional techniques. These further processing steps are not repeated herein. Likewise, the principal processing steps disclosed herein may be combined with other steps apparent to those skilled in the art.
- the application of the extra nwell region around the drain of the NMOS transistor reduces hot electron effects by reducing the electric field in the pinch-off region.
- the electric field is proportional to the voltage drop across the pinch-off region divided by the length of the pinch-off region.
- the nwell region extends laterally with a smooth decrease in doping, so that part of the drain voltage is dropped across the nwell region.
- the pinchoff region is extended somewhat because the channel is counterdoped, resulting in lower doping in the pinchoff area, which in turn increases the pinchoff length.
- the field is therefore significantly reduced, and since the hot electron current depends exponentially on the field, there is a very large corresponding decrease in this current.
- the invention provides a method and structure for a transistor whose gate is protected from “hot electron injection.”
- the transistor is well-suited for use in a device such as a mixed signal integrated circuit chip, as well as an electronic system including a processor/memory and analog components such as A/D and D/A converters, imagers and RF circuits.
- the electronic system may also be a portable appliance as shown in FIG. 4 .
- the information handling system 200 deploys transistor devices formed as discussed above. The device has a fast and reliable channel having a long life.
- FIG. 4 shows a block diagram of a multi-mode wireless communicator device 300 fabricated on a single silicon integrated chip.
- the device 300 is an integrated CMOS device with an A/D converter, radio frequency (RF) circuits, including a cellular radio core 310 , a short-range wireless transceiver core 330 , and an RF sniffer 311 , along side digital circuits, including a reconfigurable processor core 350 , a high-density memory array core 370 , and a router 390 .
- the high-density memory array core 370 can include various memory technologies such as flash memory and static random access memory (SRAM), among others, on different portions of the memory array core.
- the multi-mode wireless communicator device 300 can detect and communicate with any wireless system it encounters at a given frequency.
- the router 390 performs the switch in real time through an engine that keeps track of the addresses of where the packets are going.
- the router 390 can send packets in parallel through two or more separate pathways.
- the reconfigurable processor core 350 controls the cellular radio core 310 and the short-range wireless transceiver core 330 to provide a seamless dual-mode network integrated circuit that operates with a plurality of distinct and unrelated communications standards and protocols such as Global System for Mobile Communications (GSM), General Packet Radio Service (GPRS), Enhance Data Rates for GSM Evolution (Edge) and BluetoothTM.
- GSM Global System for Mobile Communications
- GPRS General Packet Radio Service
- Edge Enhance Data Rates for GSM Evolution
- BluetoothTM BluetoothTM.
- the cell phone core 310 provides wide area network (WAN) access, while the short-range wireless transceiver core 330 supports local area network (LAN) access.
- the reconfigurable processor core 350 has embedded read-only-memory (ROM) containing software such as IEEE802.11, GSM, GPRS, Edge, and/or BluetoothTM protocol software, among others.
- ROM read-only-memory
- the cellular radio core 310 includes a transmitter/receiver section that is connected to an off-chip antenna (not shown).
- the transmitter/receiver section is a direct conversion radio that includes an I/Q demodulator, transmit/receive oscillator/clock generator, multi-band power amplifier (PA) and PA control circuit, and voltage-controlled oscillators and synthesizers.
- transmitter/receiver section 312 intermediate frequency (IF) stages are used.
- IF intermediate frequency
- the transmitter/receiver section converts received signals into a first intermediate frequency (IF) by mixing the received signals with a synthesized local oscillator frequency and then translates the first IF signal to a second IF signal.
- the second IF signal is hard-limited and processed to extract an RSSI signal proportional to the logarithm of the amplitude of the second IF signal.
- the hard-limited IF signal is processed to extract numerical values related to the instantaneous signal phase, which are then combined with the RSSI signal.
- the combined signals are processed by the processor core 350 to form PCM voice samples that are subsequently converted into an analog signal and provided to an external speaker or earphone.
- the processor simply transfers the data over an input/output (I/O) port.
- I/O input/output
- an off-chip microphone captures analog voice signals, digitizes the signal, and provides the digitized signal to the processor core 350 .
- the processor core 350 codes the signal and reduces the bit-rate for transmission.
- the processor core 350 converts the reduced bit-rate signals to modulated signals, for example.
- the data is modulated and the modulated signals are then fed to the cellular telephone transmitter of the transmitter/receiver section.
- the short-range wireless transceiver core 330 contains a radio frequency (RF) modem core 332 that communicates with a link controller core 334 .
- the processor core 350 controls the link controller core 334 .
- the RF modem core 332 has a direct-conversion radio architecture with integrated VCO and frequency synthesizer.
- the RF-unit 332 includes an RF receiver connected to an analog-digital converter (ADC), which in turn is connected to a modem 316 performing digital modulation, channel filtering, AFC, symbol timing recovery, and bit slicing operations.
- ADC analog-digital converter
- the modem is connected to a digital to analog converter (DAC) that in turn drives an RF transmitter.
- DAC digital to analog converter
- the device 300 when the short-range wireless core 330 in the idle mode detects that the short-range network using BluetoothTM signals, for example, have dropped in strength, the device 300 activates the cellular radio core 310 to establish a cellular link, using information from the latest periodic ping. If a cellular connection is established and BluetoothTM signals are weak, the device 300 sends a deregistration message to the BluetoothTM system and/or a registration message to the cellular system. Upon registration from the cellular system, the short-range transceiver core 330 is turned off or put into a deep sleep mode and the cellular radio core 310 and relevant parts of the synthesizer are powered up to listen to the cellular channel.
- the router 390 can send packets in parallel through the separate pathways of cellular or BluetoothTM. For example, if a BluetoothTM connection is established, the router 390 knows which address it is looking at and will be able to immediately route packets using another connection standard. In doing this operation, the router 390 pings its environment to decide on optimal transmission medium. If the signal reception is poor for both pathways, the router 390 can send some packets in parallel through both the primary and secondary communication channel (cellular and/or BluetoothTM) to make sure some of the packets arrive at their destinations. However, if the signal strength is adequate, the router 390 prefers the BluetoothTM mode to minimize the number of subscribers using the capacity-limited and more expensive cellular system at any give time.
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (20)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/376,700 USRE42232E1 (en) | 2001-09-21 | 2006-03-15 | RF chipset architecture |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/962,717 US6710424B2 (en) | 2001-09-21 | 2001-09-21 | RF chipset architecture |
US11/376,700 USRE42232E1 (en) | 2001-09-21 | 2006-03-15 | RF chipset architecture |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/962,717 Reissue US6710424B2 (en) | 2001-09-21 | 2001-09-21 | RF chipset architecture |
Publications (1)
Publication Number | Publication Date |
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USRE42232E1 true USRE42232E1 (en) | 2011-03-22 |
Family
ID=25506259
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/962,717 Ceased US6710424B2 (en) | 2001-09-21 | 2001-09-21 | RF chipset architecture |
US11/376,700 Expired - Lifetime USRE42232E1 (en) | 2001-09-21 | 2006-03-15 | RF chipset architecture |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
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US09/962,717 Ceased US6710424B2 (en) | 2001-09-21 | 2001-09-21 | RF chipset architecture |
Country Status (1)
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US (2) | US6710424B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100313025A1 (en) * | 2009-06-05 | 2010-12-09 | Rochester Institute Of Technology | Methods establishing a symmetric encryption key and devices thereof |
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US6710424B2 (en) | 2001-09-21 | 2004-03-23 | Airip | RF chipset architecture |
US7383058B2 (en) * | 2002-07-16 | 2008-06-03 | Intel Corporation | RF/microwave system with a system on a chip package or the like |
US7062742B2 (en) * | 2003-04-22 | 2006-06-13 | Lsi Logic Corporation | Routing structure for transceiver core |
TWI373925B (en) * | 2004-02-10 | 2012-10-01 | Tridev Res L L C | Tunable resonant circuit, tunable voltage controlled oscillator circuit, tunable low noise amplifier circuit and method of tuning a resonant circuit |
US7525150B2 (en) * | 2004-04-07 | 2009-04-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | High voltage double diffused drain MOS transistor with medium operation voltage |
US7420365B2 (en) | 2006-03-15 | 2008-09-02 | Honeywell International Inc. | Single chip MR sensor integrated with an RF transceiver |
US20080007365A1 (en) * | 2006-06-15 | 2008-01-10 | Jeff Venuti | Continuous gain compensation and fast band selection in a multi-standard, multi-frequency synthesizer |
US7672645B2 (en) * | 2006-06-15 | 2010-03-02 | Bitwave Semiconductor, Inc. | Programmable transmitter architecture for non-constant and constant envelope modulation |
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