USRE41633E1 - Light source for swept source optical coherence tomography based on cascaded distributed feedback lasers with engineered band gaps - Google Patents

Light source for swept source optical coherence tomography based on cascaded distributed feedback lasers with engineered band gaps Download PDF

Info

Publication number
USRE41633E1
USRE41633E1 US12/555,622 US55562209A USRE41633E US RE41633 E1 USRE41633 E1 US RE41633E1 US 55562209 A US55562209 A US 55562209A US RE41633 E USRE41633 E US RE41633E
Authority
US
United States
Prior art keywords
tuned
gain
wavelength
current
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active, expires
Application number
US12/555,622
Inventor
Yan Zhou
Keith E. O'Hara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Carl Zeiss Meditec Inc
Original Assignee
Carl Zeiss Meditec Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carl Zeiss Meditec Inc filed Critical Carl Zeiss Meditec Inc
Priority to US12/555,622 priority Critical patent/USRE41633E1/en
Application granted granted Critical
Publication of USRE41633E1 publication Critical patent/USRE41633E1/en
Active legal-status Critical Current
Adjusted expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B9/00Measuring instruments characterised by the use of optical techniques
    • G01B9/02Interferometers
    • G01B9/02001Interferometers characterised by controlling or generating intrinsic radiation properties
    • G01B9/02002Interferometers characterised by controlling or generating intrinsic radiation properties using two or more frequencies
    • G01B9/02004Interferometers characterised by controlling or generating intrinsic radiation properties using two or more frequencies using frequency scans
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B9/00Measuring instruments characterised by the use of optical techniques
    • G01B9/02Interferometers
    • G01B9/0209Low-coherence interferometers
    • G01B9/02091Tomographic interferometers, e.g. based on optical coherence
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47Scattering, i.e. diffuse reflection
    • G01N21/4795Scattering, i.e. diffuse reflection spatially resolved investigating of object in scattering medium
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/028Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255Controlling the frequency of the radiation
    • H01S5/06258Controlling the frequency of the radiation with DFB-structure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1092Multi-wavelength lasing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1215Multiplicity of periods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1237Lateral grating, i.e. grating only adjacent ridge or mesa

Definitions

  • One or more embodiments of the present invention relate generally to light sources for optical imaging.
  • the invention is a semiconductor-based tunable laser for swept source optical coherence tomography.
  • Optical Coherence Tomography is a technology for performing high-resolution cross sectional imaging that can provide images of tissue structure on the micron scale in situ and in real time (U.S. Pat. No. 5,321,501).
  • FD-OCT Fourier domain OCT
  • TD-OCT time domain OCT
  • TD-OCT the optical path length between the sample and reference arms needs to be mechanically scanned.
  • SS-OCT swept source OCT
  • SD-OCT spectrometer-based spectral domain OCT
  • A-scan a full axial scan is obtained in parallel for all points along the sample axial line within a short time determined by the wavelength sweep rate of the swept source (in SS-OCT) or the line scan rate of the line scan camera (in SD-OCT).
  • the speed for each axial scan can be substantially increased as compared to the mechanical scanning speed of TD-OCT and this is especially beneficial for real-time imaging of living biological samples such as the human eye.
  • SD-OCT and SS-OCT can provide substantially greater signal-to-noise ratio relative to TD-OCT, as explained by Mitsui (1999) “Dynamic Range of Optical Reflectometry with Spectral Interferometry.” Japanese Journal of Applied Physics 38(10): 6133-6137.
  • FIG. 1 shows the basic configuration of a SS-OCT system based on a tunable laser with a single lasing wavelength.
  • Light from a tunable single-wavelength laser 102 is split through a beam splitter or fiber coupler 104 into a reference arm 106 and a sample arm 108 of an interferometer and the interference signal is detected with a single high-speed photodetector 110 .
  • the interference spectrum from the OCT interferometer is recorded sequentially.
  • the axial reflectance distribution of the sample is obtained by a Fourier transform of the sequentially acquired spectral interference signal.
  • FIG. 2 shows a system, described in a co-pending US patent application by Zhou and Everett (“Fourier domain optical coherence tomography employing a swept multi-wavelength laser and a multi-channel receiver” filed on Jul. 1, 2005, application Ser. No. 11/174,158) incorporated herein by reference, of a SS-OCT system based on a tunable laser with multiple lasing wavelengths.
  • Light from a tunable multi-wavelength laser 202 is split via a beam splitter, for example, fiber coupler 204 , into a reference arm 206 and a sample arm 208 of an interferometer. Light returning from the reference arm and the sample is combined, either with the same splitter as shown in FIG.
  • a beam splitter for example, fiber coupler 204
  • the combined, interfered light is sent to a detector, in this case, multi-channel receiver 210 .
  • a processor 220 obtains the spectral interferogram data from the multi-channel receiver 210 , synchronized with the sweeping of the multi-wavelength laser 202 . It combines the data samples from the individual channels to form the full spectral interference fringes and carries out a Fourier transform of the spectral interference fringes to provide the information of the reflectance distribution along the depth within the sample 222 .
  • a practical SS-OCT system requires a high speed swept source with a sweep rate of at least about 20 kHz that is continuously tunable over a broad tuning range (preferably greater than 50 nm).
  • Current commercially available tunable lasers can be divided into electronically tuned lasers and mechanically tuned lasers.
  • Electronically-tuned lasers are either limited in their tuning range (typically 5 nm to 10 nm for a single distributed feedback (DFB) laser), or discretely tunable in order to cover a wider range as in the case of sampled grating distributed feedback reflector (SG-DBR) lasers (see for example, U.S. Pat. No. 4,896,325, U.S. Pat. No. 5,325,392).
  • DFB distributed feedback
  • SG-DBR sampled grating distributed feedback reflector
  • tunable semiconductor lasers developed for optical fiber communications either are step-tuned to fit the ITU grid (see for example, Amano, T. et al. (2005). “Optical frequency-domain reflectometry with a rapid wavelength-scanning superstructure-grating distributed Bragg reflector laser.” Applied Optics 44(5): 808-816) or, if continuously tunable, are very slow (see for example, U.S. Pat. No. 6,847,661) and they do not meet the requirement for an SS-OCT system, such as the high wavelength sweeping rate (more than 20 kHz) and the broad spectral range to be covered (e.g. 25 to 200 nm).
  • FIG. 1 shows the basic configuration of a SS-OCT system based on a tunable laser with a single lasing wavelength
  • FIG. 2 shows the basic configuration of a SS-OCT system based on a tunable laser with multiple lasing wavelengths
  • FIG. 3 shows a first embodiment of the design of the invented cascaded multi-DFB based semiconductor band gap engineered laser for swept source OCT;
  • FIG. 4 shows a second embodiment of the design of the invented cascaded multi-DFB based semiconductor band gap engineered laser for swept source OCT;
  • FIG. 5 shows the flexibility of the relationship between the tunable lasing wavelength(s) and the tuning time
  • FIG. 6 shows a scheme to monitor the lasing wavelength(s) so that the lasing wavelength versus time relationship can be calibrated in real time.
  • the present invention is a new design for a widely continuously tunable semiconductor laser that can emit either a single lasing wavelength or multiple lasing wavelengths, which is very suitable for swept-source OCT applications.
  • the new design consists of a multiple number of tunable DFB lasers cascaded along a single waveguide with each section of the multiple quantum wells (MQWs) (corresponding to each DFB grating) having a different energy bandgap so that along the laser emission direction, the follow-up sections are significantly transparent to light emitted from the previous sections.
  • MQWs multiple quantum wells
  • Each DFB MQWs section can be activated and tuned to lase across a fraction of the overall bandwidth as is achievable for a single DFB laser and all sections can be sequentially activated and tuned so as to collectively cover a broad bandwidth.
  • MQWs are the preferred gain medium for use in this laser, but any optical gain medium can be used if the wavelength range of gain can be adjusted between individual gain sections.
  • Single quantum wells, semiconductor heterojunctions, or quantum dots are alternative practical gain media.
  • all sections can also be simultaneously activated and tuned to enable a tunable multi-wavelength laser.
  • the presently invented laser structure can be realized using two well-established technologies.
  • the gain medium with sections of different band gap can be produced by semiconductor band gap engineering through quantum well intermixing (see for example U.S. Pat. No. 6,617,188), or selective area growth or regrowth (see for example T. van Caenegem et al, Progress in Crystal Growth and Characterization of Materials 35(2-4): 263-268).
  • the relatively narrowly-tunable laser resonators are produced using existing DFB laser technology. By cascading a number of tunable DBF lasers along a single waveguide, the cost of such a device can be substantially reduced as compared to that of the mechanically tunable lasers.
  • each DFB laser section can only be tuned over a relatively narrow range (e.g. 5 nm), by sequentially activating and tuning each section, the combined tuning range can hence be greatly increased. (For example, 10 sections can provide a 50 nm tuning range).
  • the achievable tuning speed can be many orders of magnitude higher than that of
  • the laser is made on a semiconductor substrate 302 that has a waveguide 304 with multiple sections of different band-gap-engineered multiple quantum wells (MQWs) 306 .
  • the multiple distributed feedback gratings 308 corresponding to the band-gap-engineered MWQs 306 are fabricated either on top of or below the waveguide 304 as shown in FIG. 3 , each section has a different Bragg grating period.
  • the quantum well corresponding to each section can have its energy band gap shifted, preferably by a band-gap engineering technique that can be performed after deposition of epitaxial layers of semiconductor; quantum well intermixing is one such post-epi technique.
  • the peak luminescence wavelengths associated with the different MQW energy band gaps can be ⁇ 1 > ⁇ 2 > ⁇ 3 > . . . > ⁇ n (from left to right) to avoid re-absorption of emitted laser light from previous sections on the left of each section.
  • the band gap energy of each section increases from left to right.
  • Each section can be activated and tuned by injecting current which will both pump the gain medium and also tune the effective grating period and hence the lasing wavelength.
  • each section can also be electrically pumped with a constant current and thermally tuned, by respectively injecting a constant electrical current which will pump the gain medium and varying the temperature which will tune the effective grating period and hence the lasing wavelength, although thermal tuning will be much slower as compared to electrical tuning.
  • Anti-reflection (AR) coating 310 is preferably deposited on at least the laser emission facet or on both facets of the laser to suppress the resonance of Fabry-Perot cavity modes.
  • the lasing power may change with the lasing wavelength, but this is acceptable for SS-OCT application because the instantaneous power can be measured and the interference spectrum can be compensated during data processing for the power variation.
  • the distributed feedback structures 408 are made on the two sides of the waveguide 404 .
  • Separate electrodes can be used, with the pump electrode 414 on the waveguide 404 for electrically pumping the gain medium, and the other wavelength tuning electrode 416 injecting carriers on the two sides of the waveguide 404 to modulate the refractive index and control the effective grating period.
  • the advantage of this embodiment is that the injection current for laser power control can be substantially separated from the electrical current for lasing wavelength tuning, so that the lasing power can be held substantially constant as the lasing wavelength is tuned.
  • the FIG. 4 embodiment can include a bottom cathode electrode 412 on the substrate 402 .
  • one or both of the ends of the waveguide 406 can include an AR coating 410 .
  • the electrical pumping anode electrodes ( 314 for embodiment 1 and 414 for embodiment 2) can be made into one anode electrode to reduce the number of electrical connection pins for the laser.
  • the wavelength tuning electrode 416 can be combined to one for all the gratings to reduce the electrode number, while each pumping electrode needs to be activated sequentially.
  • the output lasing power from each section can reach 10 to 40 mW and the complete laser die is 10 mm long which is feasible.
  • the tuning range 504 of each section can also overlap with that of the next section, as we can use data processing to drop or average the measurements in the duplicated or overlapped wavelength range 506 .
  • the tuning curve 508 also does not need to be linear, as long as we know the shape, we can compensate it in data processing.
  • auxiliary interferometer to monitor the wavelength sweep (for example, FIG. 5 of U.S. Pat. No. 5,956,355).
  • the auxiliary interferometer is a Fabry-Perot etalon that provides a series of peaks in transmitted power, these peaks being uniformly spaced in inverse wavelength.
  • the first transmission peak traversed by each section must be identified from among the many transmission peaks of the auxiliary interferometer.
  • the relationship of wavelength ⁇ versus time t of each section may be stable enough such that the identity of the first peak of a given section can be determined once by a wavelength measurement during initial calibration. If the sweep relationship is not that stable, one can use a second auxiliary interferometer with a different spacing of transmission peaks to uniquely identify the starting wavelength of each section based on its relationship to two incommensurate sets of transmission peaks.
  • FIG. 6 shows such a scheme to monitor the light source so that the lasing wavelength versus time relationship can be calibrated in real time.
  • the tunable light source 602 is powered by electrical power source 601 and linked to the OCT system 610 through, for example, a fiber.
  • a small fraction of light is tapped by fiber coupler 604 to Fabry-Perot filters 606 and 608 , these filters having etalon optical gaps of d 1 and d 2 respectively.
  • the optical power transmitted through filters 606 and 608 can be measured by photodetectors 612 and 614 respectively.
  • Each Fabry-Perot etalon will provide a series of peaks in transmitted power, but the spacing of these peaks differs for filters 606 and 608 due to their different gap spacing.
  • the combined pattern of transmission from both filters can be used to uniquely identify the wavelength of a given transmission peak, and thus to determine the wavelength of the swept source 602 .
  • the presently invented tunable semiconductor laser source is especially useful for SS-OCT applications. Meanwhile, the presently invented light source is also useful for other applications including sensing, spectroscopy and metrology.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • General Health & Medical Sciences (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Radiology & Medical Imaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Lasers (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)

Abstract

The present invention is a tunable semiconductor laser for swept source optical coherence tomography, comprising a semiconductor substrate; a waveguide on top of said substrate with multiple sections of different band gap engineered multiple quantum wells (MQWs); a multiple of distributed feedback (DFB) gratings corresponding to each said band gap engineered MWQs, each DFB having a different Bragg grating period; and anti-reflection (AR) coating deposited on at least the laser emission facet of the laser to suppress the resonance of Fabry-Perot cavity modes. Each DFB MQWs section can be activated and tuned to lase across a fraction of the overall bandwidth as is achievable for a single DFB laser and all sections can be sequentially activated and tuned so as to collectively cover a broad bandwidth, or simultaneously activated and tuned to enable a tunable multi-wavelength laser. The laser hence can emit either a single lasing wavelength or a multiple of lasing wavelengths and is very suitable for swept-source OCT applications.

Description

PRIORITY
This application claims the benefit of the filing date under 35 U.S.C. §119 (e) of U.S. Provisional Patent Application Ser. No. 60/714,286, filed Sep. 6, 2005, which is hereby incorporated by reference in its entirety.
TECHNICAL FIELD OF THE INVENTION
One or more embodiments of the present invention relate generally to light sources for optical imaging. In particular, the invention is a semiconductor-based tunable laser for swept source optical coherence tomography.
BACKGROUND OF THE INVENTION
Optical Coherence Tomography (OCT) is a technology for performing high-resolution cross sectional imaging that can provide images of tissue structure on the micron scale in situ and in real time (U.S. Pat. No. 5,321,501). In recent years, it has been demonstrated that Fourier domain OCT (FD-OCT), which so far employs either a wavelength swept source and a single detector or a broadband source and an array spectrometer, has significant advantages in both speed and signal-to-noise ratio as compared to time domain OCT (TD-OCT) (Choma, M. A. et al. (2003). “Sensitivity advantage of swept source and Fourier domain optical coherence tomography.” Optics Express 11(18): 2183-2189). In TD-OCT, the optical path length between the sample and reference arms needs to be mechanically scanned. In both swept source OCT (SS-OCT) and spectrometer-based spectral domain OCT (SD-OCT), the optical path length difference between the sample and reference arm is not mechanically scanned. Instead, a full axial scan (also called A-scan) is obtained in parallel for all points along the sample axial line within a short time determined by the wavelength sweep rate of the swept source (in SS-OCT) or the line scan rate of the line scan camera (in SD-OCT). As a result, the speed for each axial scan can be substantially increased as compared to the mechanical scanning speed of TD-OCT and this is especially beneficial for real-time imaging of living biological samples such as the human eye. In addition, SD-OCT and SS-OCT can provide substantially greater signal-to-noise ratio relative to TD-OCT, as explained by Mitsui (1999) “Dynamic Range of Optical Reflectometry with Spectral Interferometry.” Japanese Journal of Applied Physics 38(10): 6133-6137.
SS-OCT can be achieved using either a single lasing wavelength tunable laser or a multiple lasing wavelengths tunable laser. FIG. 1 shows the basic configuration of a SS-OCT system based on a tunable laser with a single lasing wavelength. Light from a tunable single-wavelength laser 102 is split through a beam splitter or fiber coupler 104 into a reference arm 106 and a sample arm 108 of an interferometer and the interference signal is detected with a single high-speed photodetector 110. By sweeping the wavelength of the monochromatic source 102, the interference spectrum from the OCT interferometer is recorded sequentially. The axial reflectance distribution of the sample is obtained by a Fourier transform of the sequentially acquired spectral interference signal.
FIG. 2 shows a system, described in a co-pending US patent application by Zhou and Everett (“Fourier domain optical coherence tomography employing a swept multi-wavelength laser and a multi-channel receiver” filed on Jul. 1, 2005, application Ser. No. 11/174,158) incorporated herein by reference, of a SS-OCT system based on a tunable laser with multiple lasing wavelengths. Light from a tunable multi-wavelength laser 202 is split via a beam splitter, for example, fiber coupler 204, into a reference arm 206 and a sample arm 208 of an interferometer. Light returning from the reference arm and the sample is combined, either with the same splitter as shown in FIG. 2 or another beam combining element as is known in the art of interferometry. The combined, interfered light is sent to a detector, in this case, multi-channel receiver 210. A processor 220 obtains the spectral interferogram data from the multi-channel receiver 210, synchronized with the sweeping of the multi-wavelength laser 202. It combines the data samples from the individual channels to form the full spectral interference fringes and carries out a Fourier transform of the spectral interference fringes to provide the information of the reflectance distribution along the depth within the sample 222.
A practical SS-OCT system requires a high speed swept source with a sweep rate of at least about 20 kHz that is continuously tunable over a broad tuning range (preferably greater than 50 nm). Current commercially available tunable lasers can be divided into electronically tuned lasers and mechanically tuned lasers. Electronically-tuned lasers are either limited in their tuning range (typically 5 nm to 10 nm for a single distributed feedback (DFB) laser), or discretely tunable in order to cover a wider range as in the case of sampled grating distributed feedback reflector (SG-DBR) lasers (see for example, U.S. Pat. No. 4,896,325, U.S. Pat. No. 5,325,392). The discretely tunable lasers described in U.S. Pat. No. 4,896,325 and U.S. Pat. No. 5,325,392 operate using a single gain section, and they tune using a Vernier effect between the two DBR end mirrors, so both DBR end mirrors and a phase-matching device must be simultaneously continuously tuned to produce discrete tuning; these features make this design inconvenient for SS-OCT. Most mechanically tunable lasers are slow. Some use fiber and piezo based Fabry-Perot (FP) filters (see for example Huber, R. et al. (2005) Optics Express 13(9): 3513-3528; and (2006) Optics Express 14(8): 3225-3237) and others use fast rotating polygon mirrors (see for example, US20050035295). For example, patent application US20050035295 and the article by Oh, W. Y. et al. (“Wide tuning range wavelength-swept laser with two semiconductor optical amplifiers.” Photonics Technology Letters, IEEE 17(3): 678-680) disclosed a wavelength tuning source for SS-OCT that employs a continuously rotating optical arrangement for lasing wavelength selection. The current price of a swept source suitable for OCT is very high (see for example, Thorlab Inc. Product Catalog, Vol. 17, (2005) page 469) and in addition, the demonstrated wavelength sweep rate is limited to about 20 kHz.
On the other hand, tunable semiconductor lasers developed for optical fiber communications either are step-tuned to fit the ITU grid (see for example, Amano, T. et al. (2005). “Optical frequency-domain reflectometry with a rapid wavelength-scanning superstructure-grating distributed Bragg reflector laser.” Applied Optics 44(5): 808-816) or, if continuously tunable, are very slow (see for example, U.S. Pat. No. 6,847,661) and they do not meet the requirement for an SS-OCT system, such as the high wavelength sweeping rate (more than 20 kHz) and the broad spectral range to be covered (e.g. 25 to 200 nm). Although there are various designs of semiconductor based tunable lasers (see for example, Muller, M. et al. (2003) “1.3-μm Continuously Tunable Distributed Feedback Laser With Constant Power Output Based on GalnNAs—GaAs”, Photonics Technology Letters, IEEE 15(7) 897-899; Buss J. et al. (2005) “Tunable Laser Diodes and Related Optical Sources” Second Edition, John Wiley & Sons, Inc., Hoboken, N.J., and others as cited in this application, which are all incorporated in their entirety herein by reference), these lasers are not designed specifically for SS-OCT applications. In particular, there are attempts to cascade a few distributed feedback (DFB) semiconductor lasers along a single channel waveguide to achieve complex coupled DFB lasers (see for example, U.S. Pat. No. 5,936,994; U.S. Pat. No. 6,104,739; U.S. Pat. No. 6,201,824; Hong, J. et al. (1998) “Enhanced Wavelength Tuning Range in Two-Section Complex-Coupled DFB Lasers by Alternating Gain and Loss Coupling”, Journal of Lightwave Technology, 16(7): 1323). When the individual sections of these lasers are built on semiconductor structures having uniform energy band gap, there is a significant overlap of the optical gain curve associated with each DFB grating and the resulting lasers have limited tuning range.
In light of the above, there is hence a need in the art for a low cost continuously tunable laser that meets the requirement of a real time SS-OCT system.
BRIEF DESCRIPTION OF THE DRAWING
FIG. 1 shows the basic configuration of a SS-OCT system based on a tunable laser with a single lasing wavelength;
FIG. 2 shows the basic configuration of a SS-OCT system based on a tunable laser with multiple lasing wavelengths;
FIG. 3 shows a first embodiment of the design of the invented cascaded multi-DFB based semiconductor band gap engineered laser for swept source OCT;
FIG. 4 shows a second embodiment of the design of the invented cascaded multi-DFB based semiconductor band gap engineered laser for swept source OCT;
FIG. 5 shows the flexibility of the relationship between the tunable lasing wavelength(s) and the tuning time;
FIG. 6 shows a scheme to monitor the lasing wavelength(s) so that the lasing wavelength versus time relationship can be calibrated in real time.
DETAILED DESCRIPTION
The present invention is a new design for a widely continuously tunable semiconductor laser that can emit either a single lasing wavelength or multiple lasing wavelengths, which is very suitable for swept-source OCT applications. As shown in FIG. 3, in accordance with one or more embodiments of the present invention, the new design consists of a multiple number of tunable DFB lasers cascaded along a single waveguide with each section of the multiple quantum wells (MQWs) (corresponding to each DFB grating) having a different energy bandgap so that along the laser emission direction, the follow-up sections are significantly transparent to light emitted from the previous sections. Each DFB MQWs section can be activated and tuned to lase across a fraction of the overall bandwidth as is achievable for a single DFB laser and all sections can be sequentially activated and tuned so as to collectively cover a broad bandwidth. MQWs are the preferred gain medium for use in this laser, but any optical gain medium can be used if the wavelength range of gain can be adjusted between individual gain sections. Single quantum wells, semiconductor heterojunctions, or quantum dots are alternative practical gain media. Alternatively, all sections can also be simultaneously activated and tuned to enable a tunable multi-wavelength laser.
The presently invented laser structure can be realized using two well-established technologies. The gain medium with sections of different band gap can be produced by semiconductor band gap engineering through quantum well intermixing (see for example U.S. Pat. No. 6,617,188), or selective area growth or regrowth (see for example T. van Caenegem et al, Progress in Crystal Growth and Characterization of Materials 35(2-4): 263-268). The relatively narrowly-tunable laser resonators are produced using existing DFB laser technology. By cascading a number of tunable DBF lasers along a single waveguide, the cost of such a device can be substantially reduced as compared to that of the mechanically tunable lasers. Although, each DFB laser section can only be tuned over a relatively narrow range (e.g. 5 nm), by sequentially activating and tuning each section, the combined tuning range can hence be greatly increased. (For example, 10 sections can provide a 50 nm tuning range). In addition, the achievable tuning speed can be many orders of magnitude higher than that of the mechanical counterpart.
In a first preferred embodiment of FIG. 3, the laser is made on a semiconductor substrate 302 that has a waveguide 304 with multiple sections of different band-gap-engineered multiple quantum wells (MQWs) 306. The multiple distributed feedback gratings 308 corresponding to the band-gap-engineered MWQs 306 are fabricated either on top of or below the waveguide 304 as shown in FIG. 3, each section has a different Bragg grating period. The quantum well corresponding to each section can have its energy band gap shifted, preferably by a band-gap engineering technique that can be performed after deposition of epitaxial layers of semiconductor; quantum well intermixing is one such post-epi technique. Suppose we use the lasing output on the right hand as shown in the FIG. 3, we can have the peak luminescence wavelengths associated with the different MQW energy band gaps to be λ123> . . . >λn (from left to right) to avoid re-absorption of emitted laser light from previous sections on the left of each section. Here, the band gap energy of each section increases from left to right. There can be a common bottom cathode electrode 312 electrically connected to the substrate 302 and separate anode electrodes 314 for each section. Each section can be activated and tuned by injecting current which will both pump the gain medium and also tune the effective grating period and hence the lasing wavelength. One can control the rate of current injection in order to vary the carrier densities in the substrate near the Bragg grating, which in turn varies the effective refractive index within the Bragg grating, which in turn creates a variable effective grating period. Alternatively, each section can also be electrically pumped with a constant current and thermally tuned, by respectively injecting a constant electrical current which will pump the gain medium and varying the temperature which will tune the effective grating period and hence the lasing wavelength, although thermal tuning will be much slower as compared to electrical tuning. If there is some degree of overlap of the gain curve between or among some neighboring sections, those follow-up sections in the right hand side portion, closer to the laser emission facet, can be pumped to transparency or to have optical gain but below lasing threshold to ensure that the emitted laser light is not absorbed. Anti-reflection (AR) coating 310 is preferably deposited on at least the laser emission facet or on both facets of the laser to suppress the resonance of Fabry-Perot cavity modes. In this embodiment of FIG. 3, the lasing power may change with the lasing wavelength, but this is acceptable for SS-OCT application because the instantaneous power can be measured and the interference spectrum can be compensated during data processing for the power variation.
In a second preferred embodiment as shown in FIG. 4, the distributed feedback structures 408 are made on the two sides of the waveguide 404. Separate electrodes can be used, with the pump electrode 414 on the waveguide 404 for electrically pumping the gain medium, and the other wavelength tuning electrode 416 injecting carriers on the two sides of the waveguide 404 to modulate the refractive index and control the effective grating period. The advantage of this embodiment is that the injection current for laser power control can be substantially separated from the electrical current for lasing wavelength tuning, so that the lasing power can be held substantially constant as the lasing wavelength is tuned. Nearly-constant power gives nearly-uniform signal-to-noise ratio in the interference spectrum, which helps to achieve both good axial resolution and good signal-to-noise ratio in reconstruction of the reflectance distribution. Like the FIG. 3 embodiment, the FIG. 4 embodiment can include a bottom cathode electrode 412 on the substrate 402. In addition, one or both of the ends of the waveguide 406 can include an AR coating 410.
One can have all the sections lase and hence sweep the multiple wavelengths together as a multi-wavelength laser source. In this case, the electrical pumping anode electrodes (314 for embodiment 1 and 414 for embodiment 2) can be made into one anode electrode to reduce the number of electrical connection pins for the laser. On the other hand, one can turn the sections on one at a time, sweeping each section for simple detection. In the latter case, for the second preferred embodiment, the wavelength tuning electrode 416 can be combined to one for all the gratings to reduce the electrode number, while each pumping electrode needs to be activated sequentially.
Suppose we have 20 sections, with each section 500 μm long, the output lasing power from each section can reach 10 to 40 mW and the complete laser die is 10 mm long which is feasible.
Note that there can be dead time 502 between turning one section off and turning the next section on as is shown in FIG. 5, but this is acceptable as long as we know the lasing wavelength and power at a specific time, because we can use data processing to drop the signal during the dead time 502. The tuning range 504 of each section can also overlap with that of the next section, as we can use data processing to drop or average the measurements in the duplicated or overlapped wavelength range 506. The tuning curve 508 also does not need to be linear, as long as we know the shape, we can compensate it in data processing.
Often one uses an auxiliary interferometer to monitor the wavelength sweep (for example, FIG. 5 of U.S. Pat. No. 5,956,355). Often the auxiliary interferometer is a Fabry-Perot etalon that provides a series of peaks in transmitted power, these peaks being uniformly spaced in inverse wavelength. In this multiple-section laser, the first transmission peak traversed by each section must be identified from among the many transmission peaks of the auxiliary interferometer. The relationship of wavelength λ versus time t of each section may be stable enough such that the identity of the first peak of a given section can be determined once by a wavelength measurement during initial calibration. If the sweep relationship is not that stable, one can use a second auxiliary interferometer with a different spacing of transmission peaks to uniquely identify the starting wavelength of each section based on its relationship to two incommensurate sets of transmission peaks.
FIG. 6 shows such a scheme to monitor the light source so that the lasing wavelength versus time relationship can be calibrated in real time. The tunable light source 602 is powered by electrical power source 601 and linked to the OCT system 610 through, for example, a fiber. A small fraction of light is tapped by fiber coupler 604 to Fabry- Perot filters 606 and 608, these filters having etalon optical gaps of d1 and d2 respectively. The optical power transmitted through filters 606 and 608 can be measured by photodetectors 612 and 614 respectively. Each Fabry-Perot etalon will provide a series of peaks in transmitted power, but the spacing of these peaks differs for filters 606 and 608 due to their different gap spacing. The combined pattern of transmission from both filters can be used to uniquely identify the wavelength of a given transmission peak, and thus to determine the wavelength of the swept source 602.
The presently invented tunable semiconductor laser source is especially useful for SS-OCT applications. Meanwhile, the presently invented light source is also useful for other applications including sensing, spectroscopy and metrology.
Although various embodiments that incorporate the teachings of the present invention have been shown and described in detail herein, those skilled in the art can readily devise many other varied embodiments that still incorporate these teachings.
The following references are hereby incorporated by reference.
  • US Patent Documents
  • U.S. Pat. No. 4,896,325
  • U.S. Pat. No. 5,321,501
  • U.S. Pat. No. 5,325,392
  • U.S. Pat. No. 5,936,994
  • U.S. Pat. No. 5,956,355
  • U.S. Pat. No. 6,104,739
  • U.S. Pat. No. 6,201,824
  • U.S. Pat. No. 6,617,188
  • U.S. Pat. No. 6,847,661 US20050035295
  • US patent application, Yan Zhou and Matthew J. Everett “Fourier domain optical coherence tomography employing a swept multi-wavelength laser and a multi-channel receiver” filed on Jul. 1, 2005, application Ser. No. 11/174,158
OTHER PUBLICATIONS
  • Amano, T. et al. (2005). “Optical frequency-domain reflectometry with a rapid wavelength-scanning superstructure-grating distributed Bragg reflector laser.” Applied Optics 44(5): 808-816
  • Buss J. et al. (2005) “Tunable Laser Diodes and Related Optical Sources” Second Edition, John Wiley & Sons, Inc., Hoboken, N.J.
  • Choma, M. A. et al. (2003). “Sensitivity advantage of swept source and Fourier domain optical coherence tomography.” Optics Express 11(18): 2183-2189
  • Hong, J. et al. (1998) “Enhanced Wavelength Tuning Range in Two-Section Complex-Coupled DFB Lasers by Alternating Gain and Loss Coupling”, Journal of Lightwave Technology, 16(7): 1323
  • Hong, J. et al. (1999) “Cascaded strongly gain-coupled (SGC) DFB lasers with 15-nm continuous-wavelength tuning”, Photonics Technology Letters, IEEE 11(10): 1214-1216.
  • Hong, J., et al. (1999) “Matrix-grating strongly gain-coupled (MC-SGC) DFB lasers with 34-nm continuous wavelength tuning range” Photonics Technology Letters, IEEE 11(5): 515-517.
  • Huber, R. et al. (2005). “Amplified, frequency swept lasers for frequency domain reflectometry and OCT imaging: design and scaling principles.” Optics Express 13(9): 3513-3528
  • Huber, R., et al. (2006). “Fourier Domain Mode Locking (FDML): A new laser operating regime and applications for optical coherence tomography.” Optics Express 14(8): 3225-3237
  • Muller, M. et al. (2003) “1.3-μm Continuously Tunable Distributed Feedback Laser With Constant Power Output Based on GalnNAs—GaAs”, Photonics Technology Letters, IEEE 15(7) 897-899;
  • Mitsui T. (1999) “Dynamic Range of Optical Reflectometry with Spectral Interferometry.” Japanese Journal of Applied Physics 38(10): 6133-6137
  • Oh, W. Y. et al. (“Wide tuning range wavelength-swept laser with two semiconductor optical amplifiers.” Photonics Technology Letters, IEEE 17(3): 678-680
  • Thorlab Inc. Product Catalog, Vol. 17, (2005) page 469
  • T. van Caenegem et al, Progress in Crystal Growth and Characterization of Materials 35(2-4): 263-268 (1997)

Claims (8)

1. A swept source OCT system comprising:
a tunable light source;
a beam splitter for dividing the light along a sample and a reference path;
a photodetector for receiving light returned from both the sample and the reference paths and generating output signals as a function of time as the wavelength of the source is tuned;
a processor for analyzing the output signals to derive a reflectance distribution along the sample path and wherein the tunable light source includes an elongated optical waveguide structure, with one end thereof defining a laser output facet;
a linear series of distributed feedback gratings formed along the waveguide structure to define a series of resonant cavities;
a series of semiconductor gain structures formed within the waveguide structure and aligned with the gratings, with the bandgap energy of the gain structure increasing towards said output facet; and
a power supply for supplying current to the gratings and the gain structures in a manner to generate laser output from each resonant cavity and for wavelength tuning the output.
2. An OCT system as recited in claim 1, wherein a common current is supplied to a grating and the associated gain structure.
3. An OCT system as recited in claim 1, wherein current is independently supplied to a grating and the associated gain structure.
4. An OCT system as recited in claim 1, wherein current is simultaneously supplied to all the gratings and the gain structures and wherein the current is tuned so that a tuned, multi-wavelength output is generated.
5. An OCT system as recited in claim 1, wherein current is supplied to the gain structure of each of the associated resonant cavities, said current being controlled in manner so that each of the gain sections are sequentially activated and tuned one at a time so that a tuned, narrow-band output is generated.
6. A method of evaluating the reflectance distribution within a sample using swept source OCT comprising the steps of:
providing a tunable light source, said light source including an elongated optical waveguide structure, with one end thereof defining a laser output facet, a linear series of distributed feedback gratings formed along the waveguide structure to define a series of resonant cavities, a series of semiconductor gain structures formed within the waveguide structure and aligned with the gratings, with the bandgap energy of the gain structures increasing towards said output facet, and a power supply for supplying current to the gratings and the gain structures in a manner to generate laser output from each resonant cavity and for wavelength tuning the output;
dividing the light along a sample and a reference path;
measuring light returned from both the sample and the reference paths and generating output signals as a function of time as the wavelength of the source is tuned; and
analyzing the output signals to derive a reflectance distribution along the sample path and wherein the light source is operated by supplying current to the gratings and the gain structures in a manner to generate laser output from each resonant cavity and for wavelength tuning the output.
7. A method as recited in claim 6, wherein current is simultaneously supplied to all the gratings and the gain structures and wherein the current is tuned so that a tuned, multi-wavelength output is generated.
8. A method as recited in claim 6, wherein current is supplied to the gain structure of each of the associated resonant cavities, said current being controlled in manner so that each of the gain sections are sequentially activated and tuned one at a time so that a tuned, narrow-band output is generated.
US12/555,622 2005-09-06 2009-09-08 Light source for swept source optical coherence tomography based on cascaded distributed feedback lasers with engineered band gaps Active 2027-10-07 USRE41633E1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/555,622 USRE41633E1 (en) 2005-09-06 2009-09-08 Light source for swept source optical coherence tomography based on cascaded distributed feedback lasers with engineered band gaps

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US71428605P 2005-09-06 2005-09-06
US11/503,046 US7554668B2 (en) 2005-09-06 2006-08-11 Light source for swept source optical coherence tomography based on cascaded distributed feedback lasers with engineered band gaps
US12/555,622 USRE41633E1 (en) 2005-09-06 2009-09-08 Light source for swept source optical coherence tomography based on cascaded distributed feedback lasers with engineered band gaps

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
US11/503,046 Reissue US7554668B2 (en) 2005-09-06 2006-08-11 Light source for swept source optical coherence tomography based on cascaded distributed feedback lasers with engineered band gaps

Publications (1)

Publication Number Publication Date
USRE41633E1 true USRE41633E1 (en) 2010-09-07

Family

ID=39050731

Family Applications (2)

Application Number Title Priority Date Filing Date
US11/503,046 Ceased US7554668B2 (en) 2005-09-06 2006-08-11 Light source for swept source optical coherence tomography based on cascaded distributed feedback lasers with engineered band gaps
US12/555,622 Active 2027-10-07 USRE41633E1 (en) 2005-09-06 2009-09-08 Light source for swept source optical coherence tomography based on cascaded distributed feedback lasers with engineered band gaps

Family Applications Before (1)

Application Number Title Priority Date Filing Date
US11/503,046 Ceased US7554668B2 (en) 2005-09-06 2006-08-11 Light source for swept source optical coherence tomography based on cascaded distributed feedback lasers with engineered band gaps

Country Status (1)

Country Link
US (2) US7554668B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9677869B2 (en) 2012-12-05 2017-06-13 Perimeter Medical Imaging, Inc. System and method for generating a wide-field OCT image of a portion of a sample
US10577573B2 (en) 2017-07-18 2020-03-03 Perimeter Medical Imaging, Inc. Sample container for stabilizing and aligning excised biological tissue samples for ex vivo analysis

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7564889B2 (en) * 2002-11-06 2009-07-21 Finisar Corporation Adiabatically frequency modulated source
US8792531B2 (en) * 2003-02-25 2014-07-29 Finisar Corporation Optical beam steering for tunable laser applications
JP5541831B2 (en) * 2006-12-07 2014-07-09 株式会社トプコン Optical tomographic imaging apparatus and operating method thereof
WO2008080171A1 (en) * 2006-12-22 2008-07-03 Finisar Corporation Optical transmitter having a widely tunable directly modulated laser and periodic optical spectrum reshaping element
US7941057B2 (en) * 2006-12-28 2011-05-10 Finisar Corporation Integral phase rule for reducing dispersion errors in an adiabatically chirped amplitude modulated signal
US8131157B2 (en) 2007-01-22 2012-03-06 Finisar Corporation Method and apparatus for generating signals with increased dispersion tolerance using a directly modulated laser transmitter
US7962044B2 (en) * 2007-02-02 2011-06-14 Finisar Corporation Temperature stabilizing packaging for optoelectronic components in a transmitter module
US7991291B2 (en) * 2007-02-08 2011-08-02 Finisar Corporation WDM PON based on DML
US8027593B2 (en) 2007-02-08 2011-09-27 Finisar Corporation Slow chirp compensation for enhanced signal bandwidth and transmission performances in directly modulated lasers
US8204386B2 (en) 2007-04-06 2012-06-19 Finisar Corporation Chirped laser with passive filter element for differential phase shift keying generation
US7991297B2 (en) 2007-04-06 2011-08-02 Finisar Corporation Chirped laser with passive filter element for differential phase shift keying generation
US8160455B2 (en) * 2008-01-22 2012-04-17 Finisar Corporation Method and apparatus for generating signals with increased dispersion tolerance using a directly modulated laser transmitter
US8260150B2 (en) 2008-04-25 2012-09-04 Finisar Corporation Passive wave division multiplexed transmitter having a directly modulated laser array
EP2113973A1 (en) * 2008-04-29 2009-11-04 Alcatel Lucent Laser source and method for generating millimeter wave
DE102008063225A1 (en) 2008-12-23 2010-07-01 Carl Zeiss Meditec Ag Device for Swept Source Optical Coherence Domain Reflectometry
CN102484353B (en) 2009-04-03 2015-10-07 艾克瑟劳斯股份公司 Light source and optical coherence tomography module
US8199785B2 (en) * 2009-06-30 2012-06-12 Finisar Corporation Thermal chirp compensation in a chirp managed laser
US8665450B2 (en) 2009-10-02 2014-03-04 Axsun Technologies, Inc. Integrated dual swept source for OCT medical imaging
WO2011068862A2 (en) * 2009-12-01 2011-06-09 Brigham And Women's Hospital, Inc. System and method for calibrated spectral domain optical coherence tomography and low coherence interferometry
US8238017B2 (en) * 2009-12-18 2012-08-07 Alcatel Lucent Photonic match filter
US9093822B1 (en) * 2010-12-20 2015-07-28 TeraDiode, Inc. Multi-band co-bore-sighted scalable output power laser system
US8687666B2 (en) 2010-12-28 2014-04-01 Axsun Technologies, Inc. Integrated dual swept source for OCT medical imaging
CN104205531B (en) * 2012-01-13 2017-07-11 索雷博量子电子股份有限公司 Distributed feedback laser is concatenated with the middle infrared multi-wavelength by cascading the active core that rank is constituted
JP5984693B2 (en) * 2012-01-31 2016-09-06 キヤノン株式会社 Optical coherence tomography apparatus and optical coherence tomography method
JP2013254765A (en) * 2012-06-05 2013-12-19 Hamamatsu Photonics Kk Quantum cascade laser
JP2013254764A (en) * 2012-06-05 2013-12-19 Hamamatsu Photonics Kk Quantum cascade laser
US8922782B2 (en) * 2013-03-15 2014-12-30 Axsun Technologies, Inc. OCT medical imaging system using gain waveguide array swept source
US20150357791A1 (en) * 2013-06-13 2015-12-10 Applied Optoelectronics, Inc. Tunable laser with multiple in-line sections
US10020636B2 (en) * 2013-06-13 2018-07-10 Applied Optoelectronics, Inc. Tunable laser with multiple in-line sections including sampled gratings
JP2015069988A (en) * 2013-09-26 2015-04-13 キヤノン株式会社 Superluminescent diode, and optical interference tomographic imaging device comprising the same as light source
CN103776474A (en) * 2014-01-10 2014-05-07 江苏昂德光电科技有限公司 3D matrix-type multi-channel optical fiber sensing demodulation system
WO2015163965A2 (en) * 2014-02-04 2015-10-29 Board Of Regents, The University Of Texas System Monolithic tunable terahertz radiation source using nonlinear frequency mixing in quantum cascade lasers
US9958253B2 (en) 2014-07-29 2018-05-01 Collage Medical Imaging Ltd. Synchronized dual mode OCT system
US10156476B2 (en) * 2014-11-13 2018-12-18 Bae Systems Information And Electronic Systems Integration Inc. Solid state wideband fourier transform infrared spectrometer
US9915520B2 (en) 2015-09-14 2018-03-13 Thorlabs, Inc. Apparatus and methods for one or more wavelength swept lasers and the detection of signals thereof
EP3350540B1 (en) 2015-09-17 2022-11-16 Carl Zeiss Meditec, Inc. Interferometry with pulse broadened laser diode
US11165219B2 (en) 2016-12-09 2021-11-02 Nippon Telegraph And Telephone Corporation Swept light source and drive data generation method and optical deflector for swept light source
US10901241B1 (en) 2018-03-14 2021-01-26 Onto Innovation Inc. Optical metrology system using infrared wavelengths
CN108471046B (en) * 2018-05-14 2020-08-04 南京大学 Semiconductor laser and control method
CA3111302A1 (en) * 2020-03-09 2021-09-09 Thorlabs Quantum Electronics, Inc. Tunable laser assembly and method of control
CN114300934B (en) * 2020-09-21 2024-05-14 华为技术有限公司 Laser chip, light emitting assembly, light module and laser generating method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050014300A1 (en) * 2001-10-09 2005-01-20 Infinera Corporation Optical probe and method of testing employing an interrogation beam or optical pickup
US20070002327A1 (en) * 2005-07-01 2007-01-04 Yan Zhou Fourier domain optical coherence tomography employing a swept multi-wavelength laser and a multi-channel receiver

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050014300A1 (en) * 2001-10-09 2005-01-20 Infinera Corporation Optical probe and method of testing employing an interrogation beam or optical pickup
US7079718B2 (en) * 2001-10-09 2006-07-18 Infinera Corporation Optical probe and method of testing employing an interrogation beam or optical pickup
US20070002327A1 (en) * 2005-07-01 2007-01-04 Yan Zhou Fourier domain optical coherence tomography employing a swept multi-wavelength laser and a multi-channel receiver
US7391520B2 (en) * 2005-07-01 2008-06-24 Carl Zeiss Meditec, Inc. Fourier domain optical coherence tomography employing a swept multi-wavelength laser and a multi-channel receiver

Non-Patent Citations (13)

* Cited by examiner, † Cited by third party
Title
B. Pezeshki, "New approaches to laser tuning," Optics & Photonics News, May 2001, pp. 34-38.
Catalogue/Brochure, "Optical Coherence Tomography," by ThorLabs, Jan. 2006, 13 pages in length.
J. Hong et al., "Cascaded Strongly Gain-Coupled (SGC) DFB Lasers with 15-nm Continuous-Wavelength Tuning," IEEE Photonics Technology Letters, vol. 11, No. 10, Oct. 1999, pp. 1214-1216.
J. Hong et al., "Enhanced Wavelength Tuning Range in Two-Section Complex-Coupled DFB Lasers by Alternating Gain and Loss Coupling," Journal of Lightwave Technology, vol. 16, No. 7, Jul. 1998, pp. 1323-1328.
J. Hong et al., "Matrix-Grating Strongly Gain-Coupled (MG-SGC) DFB Lasers with 34-nm Continuous Wavelength Tuning Range," IEEE Photonics Technology Letters, vol. 11, No. 5, May 1999, pp. 515-517.
M. Müller ller et al., "1.3-mum Continuously Tunable Distributed Feedback Laser With Constant Power Output Based on GaInNAs-GaAs," IEEE Photonics Technology Letters, vol. 15, No. 7, Jul. 2003, pp. 897-899.
M. Müller ller et al., "1.3-μm Continuously Tunable Distributed Feedback Laser With Constant Power Output Based on GaInNAs-GaAs," IEEE Photonics Technology Letters, vol. 15, No. 7, Jul. 2003, pp. 897-899.
M.A. Choma et al., "Sensitivity advantage of swept source and Fourier domain optical coherence tomography," Optics Express, vol. 11, No. 18, Sep. 8, 2003, pp. 2183-2189.
R. Huber et al., "Fourier Domain Mode Locking (FDML): A new laser operating regime and applications for optical coherence tomography," Optics Express, vol. 14, No. 8, Apr. 17, 2006, pp. 3225-3237.
R. Huber et al., "Three-dimenional and C-mode OCT imaging with a compact, frequency swept laser source at 1300 nm," Optics Express, vol. 13, No. 26, Dec. 26, 2005, pp. 10523-10529.
T. Amano et al., "Optical frequency-domain reflectometry with a rapid wavelength-scanning superstructure-grating distributed Bragg reflector laser," Applied Optics, vol. 44, No. 5, Feb. 10, 2005, pp. 808-816.
T. Mitsui, "Dynamic Range of Optical Reflectometry with Spectral Interferometry," Jpn. J. Appl. Phys., vol. 38, Pt. 1, No. 10, Oct. 1999, pp. 6133-6137.
T. Van Caenegem et al., "Selective Area Growth on Planar Masked InP Substrates by Metal Organic Vapour Phase Epitaxy (MOVPE)," Prog. Crystal Growth and Charact., vol. 35 (1997), No. 2-4, pp. 263-288.

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9677869B2 (en) 2012-12-05 2017-06-13 Perimeter Medical Imaging, Inc. System and method for generating a wide-field OCT image of a portion of a sample
US10359271B2 (en) 2012-12-05 2019-07-23 Perimeter Medical Imaging, Inc. System and method for tissue differentiation in imaging
US10577573B2 (en) 2017-07-18 2020-03-03 Perimeter Medical Imaging, Inc. Sample container for stabilizing and aligning excised biological tissue samples for ex vivo analysis
US10894939B2 (en) 2017-07-18 2021-01-19 Perimeter Medical Imaging, Inc. Sample container for stabilizing and aligning excised biological tissue samples for ex vivo analysis

Also Published As

Publication number Publication date
US7554668B2 (en) 2009-06-30
US20080037608A1 (en) 2008-02-14

Similar Documents

Publication Publication Date Title
USRE41633E1 (en) Light source for swept source optical coherence tomography based on cascaded distributed feedback lasers with engineered band gaps
EP1899675B1 (en) Fourier domain optical coherence tomography employing a swept multi-wavelength laser and a multi-channel receiver
US7864331B2 (en) Optical coherence tomographic imaging apparatus
US9337619B2 (en) Swept frequency laser for FD OCT with intracavity element and method of operation
Oh et al. Wide tuning range wavelength-swept laser with two semiconductor optical amplifiers
US8922782B2 (en) OCT medical imaging system using gain waveguide array swept source
US7468997B2 (en) System for swept source optical coherence tomography
US7944567B2 (en) Semiconductor light emitting element, light source using the semiconductor light emitting element, and optical tomography imaging apparatus
US9800019B2 (en) System and method for stabilizing mode locked swept laser for OCT medical imaging
US7570364B2 (en) Optical tomographic imaging apparatus
JP2009283736A (en) Optical semiconductor element, and optical coherence tomography imaging device using optical semiconductor element
US20110292399A1 (en) Discrete Spectrum Broadband Optical Source
JP2007184557A (en) Semiconductor light emitting device and light source and tomographic imaging apparatus equipped with it
JP2008145429A (en) Optical tomographic imaging system
JP2009049123A (en) Optical semiconductor device and wavelength variable light source using the same and optical tomographic image acquiring apparatus
JP2010010172A (en) Wavelength-swept light source
JP2008270585A (en) Optical semiconductor element, wavelength variable light source using same optical semiconductor element, and optical tomographic image acquisition device
Krstajić et al. Swept-source laser based on quantum-dot semiconductor optical amplifier—applications in optical coherence tomography
Wang et al. Broadly tuneable, short external cavity diode laser for optical coherence tomography
WO2017188364A1 (en) Optical amplifier, optical coherence tomography device comprising optical amplifier, and optical amplification method using optical amplifier
JP2010034173A (en) Wavelength sweeping light source
JP2009049122A (en) Optical semiconductor device, wavelength variable light source using the same and optical tomographic image acquiring apparatus
Reyes et al. Automated heterodyne method to characterize semiconductor based akinetic swept laser sources
Ohbayashi et al. Discretely swept optical-frequency domain imaging toward high-resolution, high-speed, high-sensitivity, and long-depth-range
JP2008032590A (en) Optical semiconductor element, wavelength variable light source, and optical tomography device

Legal Events

Date Code Title Description
CC Certificate of correction
REMI Maintenance fee reminder mailed
FPAY Fee payment

Year of fee payment: 4

SULP Surcharge for late payment
FPAY Fee payment

Year of fee payment: 8

MAFP Maintenance fee payment

Free format text: PAYMENT OF MAINTENANCE FEE, 12TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1553); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

Year of fee payment: 12