USRE35872E - Superconducting detector assembly and apparatus utilizing same - Google Patents
Superconducting detector assembly and apparatus utilizing same Download PDFInfo
- Publication number
- USRE35872E USRE35872E US08/633,483 US63348396A USRE35872E US RE35872 E USRE35872 E US RE35872E US 63348396 A US63348396 A US 63348396A US RE35872 E USRE35872 E US RE35872E
- Authority
- US
- United States
- Prior art keywords
- spectrometer
- radiation
- layer
- array
- bolometers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000005855 radiation Effects 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims description 26
- 239000000463 material Substances 0.000 claims description 15
- 230000003595 spectral effect Effects 0.000 claims description 14
- 239000002887 superconductor Substances 0.000 claims description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 230000003287 optical effect Effects 0.000 claims description 8
- 238000012545 processing Methods 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 238000001228 spectrum Methods 0.000 claims description 7
- 150000001875 compounds Chemical class 0.000 claims description 5
- 230000007704 transition Effects 0.000 claims description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 4
- 230000001066 destructive effect Effects 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 230000001131 transforming effect Effects 0.000 claims description 3
- 229910052692 Dysprosium Inorganic materials 0.000 claims description 2
- 229910052693 Europium Inorganic materials 0.000 claims description 2
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 2
- 229910052689 Holmium Inorganic materials 0.000 claims description 2
- 229910052765 Lutetium Inorganic materials 0.000 claims description 2
- 229910052779 Neodymium Inorganic materials 0.000 claims description 2
- 229910052772 Samarium Inorganic materials 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910017052 cobalt Inorganic materials 0.000 claims description 2
- 239000010941 cobalt Substances 0.000 claims description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 2
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 claims description 2
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 claims description 2
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 229910052746 lanthanum Inorganic materials 0.000 claims description 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 2
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 claims description 2
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 2
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 229910052727 yttrium Inorganic materials 0.000 claims description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 239000011701 zinc Substances 0.000 claims description 2
- 230000006335 response to radiation Effects 0.000 claims 2
- 238000003384 imaging method Methods 0.000 abstract description 8
- 238000004611 spectroscopical analysis Methods 0.000 abstract description 7
- 238000000576 coating method Methods 0.000 abstract description 3
- 238000004377 microelectronic Methods 0.000 abstract description 3
- 239000011248 coating agent Substances 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 30
- 239000010410 layer Substances 0.000 description 24
- 230000004044 response Effects 0.000 description 11
- 230000006870 function Effects 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 238000000429 assembly Methods 0.000 description 6
- 230000000712 assembly Effects 0.000 description 6
- 230000035945 sensitivity Effects 0.000 description 6
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 5
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000003491 array Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000000608 laser ablation Methods 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 229910002370 SrTiO3 Inorganic materials 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910001233 yttria-stabilized zirconia Inorganic materials 0.000 description 2
- ODINCKMPIJJUCX-UHFFFAOYSA-N Calcium oxide Chemical compound [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000004566 IR spectroscopy Methods 0.000 description 1
- 229910002244 LaAlO3 Inorganic materials 0.000 description 1
- BTGZYWWSOPEHMM-UHFFFAOYSA-N [O].[Cu].[Y].[Ba] Chemical compound [O].[Cu].[Y].[Ba] BTGZYWWSOPEHMM-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 229910002084 calcia-stabilized zirconia Inorganic materials 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- 235000012255 calcium oxide Nutrition 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 238000002144 chemical decomposition reaction Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229910002085 magnesia-stabilized zirconia Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 229910002076 stabilized zirconia Inorganic materials 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/12—Generating the spectrum; Monochromators
- G01J3/26—Generating the spectrum; Monochromators using multiple reflection, e.g. Fabry-Perot interferometer, variable interference filters
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/28—Investigating the spectrum
- G01J3/2803—Investigating the spectrum using photoelectric array detector
Definitions
- This invention relates to integrated radiation detector assemblies, and to spectrometers and other apparatus incorporating the same.
- infrared spectroscopy utilize either a small throughput (IR flux) optical element for dispersion, followed by a detector or a detector array, or a large throughput, scanning interferometer followed by a detector.
- IR flux IR flux
- the spectrum is accessed directly in the wavelength and frequency domain, while in the second the spectrum is measured in the time domain and then transformed (typically using Fourier algorithms) by a post-measurement calculation to the wavenumber domain.
- the first method is relatively simple to implement, but is also of relatively low sensitivity due to the small amount of light throughput involved; in addition, long scanning times are required if the spectral range encompassed is substantial, and the instrument itself must be fairly large if good resolution is to be had.
- methods using scanning interferometers find wide application in Fourier-transform infrared (FT-IR) spectroscopy and in other specialized applications (e.g., piezoelectric scanning Fabry-Perot interferometers), but the instruments employed can be very complex and expensive, and can lack durability, largely because of their requirement for high-precision moving optics.
- FT-IR Fourier-transform infrared
- More specific objects of the invention are to provide such an assembly which is itself capable of directly accomplishing transform spectroscopy, and to provide a spectrometer incorporating the same.
- Additional objects of the invention are to provide such a detector assembly, spectrometer and other apparatus that is small and compact, durable, incomplex and relatively inexpensive to construct, and that nevertheless provides outstanding levels of sensitivity and response speed.
- a detector assembly comprised of a plurality of superconductor bolometers arranged as an array, and a superposed anti-reflection layer functioning as a graded interference filter.
- the bolometers have substantially contiguous operative surfaces that provide at least one planar face for irradiation, and all of them are responsive to radiation throughout substantially a given range of wavelengths.
- the interference layer is superposed upon the irradiation face of the array, with an associated region in registry with each of the bolometers; it is composed of a material that transmits selectively, as a function of its thickness, multiple bands of wavelengths of radiation in the given range.
- the several regions of the interference layer vary in thickness to thereby provide, in combination with the associated bolometers, a plurality of detectors that differ from one another in their radiation wavelength response.
- each region of the interference layer will be of substantially constant thickness throughout, and will be dimensioned and configured to intercept and filter substantially all of the radiation that impinges upon the associated bolometer.
- a detector assembly that employs nonsuperconducting photothermal detectors (e.g., bolometers) in combination with an interference layer of such structure.
- the layer will, in any event, advantageously be of step-like form and will normally be of uniform composition throughout.
- the bolometers will most desirably be fabricated from a high temperature superconducting film that is epitaxial on the underlying substrate, formed as a meanderline element and responsive to wavelengths in the range 1 ⁇ m to 1000 ⁇ m, and most desirably in the infrared region of the spectrum.
- the assembly will generally include a substrate that is at least coextensive with the bolometer array, in which case the interference layer may be disposed outwardly adjacent either the substrate or the bolometer array. Although a submicron air gap may be present, the assembly will preferably be devoid of spacing between the irradiation face and the interference layer when those components are adjacently disposed; a buffer film will usually be interposed between the array and the substrate, and a passivation layer may be provided on the face of the array that is opposite to the substrate.
- a spectrometer comprising, in combination: a superconductor detector assembly, as described herein; means for maintaining the assembly at cryogenic temperatures in a range for varying the conductance of the bolometers; means, operatively connected to the array, for generating electrical currents indicative of the conductance of the bolometers after passage therethrough; and electronic data processing means for transforming the currents generated so as to produce signals representative of the energy of radiation caused to impinge upon the irradiation face, discriminated as a function of wavelength.
- Preferred embodiments of the spectrometer will further include means for causing radiation to impinge upon the irradiation face of the bolometer array, as well as a radiation source for generating spectral radiation within the range of intended operation.
- the data processing means will most desirably function to apply matrix-inversion transform algorithms (e.g., Fourier and bilinear) to the generated electrical currents, for producing the representative signals.
- a color-imaging apparatus in which is included a substrate having an irradiation surface, on which is arranged a multiplicity of the detector assemblies described.
- the detector assemblies all include the same combination of detectors having different response characteristics, and they are arranged with the bolometers exposed for irradiation on the substrate surface; typically, each detector assembly will consist of three different detectors.
- Additionally included in the apparatus may be means for causing radiation to impinge upon the irradiation surface, means operatively connected to the bolometers for generating electrical currents, and display means operatively connected for receiving such currents from the means for generating and the bolometers, and for displaying the spatial distribution of different wavelength components of the impinging radiation.
- FIG. 1 is a diagrammatic perspective view of a rectilinear detector assembly embodying the present invention, suitable for use in transform spectroscopy;
- FIG. 2 is a fragmentary, diagrammatic elevational view of the assembly of FIG. 1;
- FIG. 3 is a fragmentary, diagrammatic elevational view showing an alternative arrangement of the components of the assembly of the preceding Figures;
- FIG. 4 is a view similar to FIGS. 2 and 3, illustrating a further embodiment of the detector assembly in which no separate substrate component is employed;
- FIG. 5 is a plan view of a bolometer array and associated contact pads, suitable for use in fabricating the detectors employed in the assemblies of the invention
- FIG. 6 is a diagrammatic representation of a spectrometer embodying the present invention.
- FIG. 7 is a diagrammatic perspective view of a panel for three-color imaging apparatus embodying the invention.
- the detector assembly illustrated consists of a substrate 10 (e.g., a silicon wafer), a buffer film 12 (e.g., of yttrium-stabilized zirconia) deposited thereupon, a bolometer array made of a high-temperature superconducting film (e.g., YBCO), generally designated by the numeral 14, and, as a graded interference filter, an interference layer, generally designated by the numeral 16, superposed upon the bolometer array.
- a substrate 10 e.g., a silicon wafer
- a buffer film 12 e.g., of yttrium-stabilized zirconia
- a bolometer array made of a high-temperature superconducting film (e.g., YBCO)
- YBCO high-temperature superconducting film
- an interference layer generally designated by the numeral 16 superposed upon the bolometer array.
- Each of the steps 16a, 16b, 16c and 16d of the layer 16 overlies and registers with the operative area an associated bolometer 14a, 14b, 14c and 14d of the array 14, thereby rendering the bolometers effective to detect different, narrow interference bands of radiation; the bolometer 14e remains responsive to a broad range of wavelengths, as being unattenuated by filtration, and functions as a reference detector.
- the detector assembly of FIG. 3 is fabricated from the same components (omitting however the bolometer 14e), arranged for backside illumination.
- the bolometer array 14' is positioned on the surface of the substrate 10 (with an interposed buffer layer 12) opposite to that on which the interference layer 16 is disposed.
- the layer 16' serves both as the substrate for the array 14' and also as the interference filter.
- FIG. 5 shows a series-connected "quad" bolometer array pattern, fabricated (as by a microlithographic technique) from a single film of material and carried upon a substrate.
- Each of the bolometers 14a through 14d consists of a meanderline, to which is connected suitable electrical contact pads 18.
- the spectrometer apparatus of FIG. 6 utilizes a superconductor detector assembly, generally designated by the numeral 20, comprised of the components 10, 12, 14 and 16 (not shown), formed and arranged as hereinabove described with reference to the preceding Figures.
- the assembly 20 is supported upon a refrigerated cryostage mounting block 22, surrounded by cryostat walls 30; an electrical heater 24 is embedded in the block 22, the power to which is regulated by the temperature controller (TC) 26 in response to the cryostage temperature, as measured by the thermometer 28.
- the detector assembly 20 is positioned for illumination by radiation reflected from a focusing mirror 34 through the window 32.
- a power supply 33 is connected to the bolometers of the assembly 20.
- a panel suitable for use in three-color imaging apparatus is depicted in FIG. 7, and consists of a substrate 50 of semiconductor material, upon which is deposited a buffer film 52. Numerous identical detector assemblies are formed upon what is to be the irradiation surface of the panel, each assembly being composed of the same triangular array of three detectors 54a, 54b and 54c. Although not specifically illustrated, it will be appreciated that a superposed graded interference filter renders each detector of the assembly responsive to a selected radiation "color" band that is different from the bands to which the other two detectors respond; multilayer coatings may be employed in certain instances to further define the sensitivity of the detectors.
- a power supply 56 and a video display terminal 58 are operatively connected to the panel, with the terminal serving of course to display, as a function of wavelength, the spatial distribution of the components of the impinging radiation.
- certain embodiments of the instant detector assembly may utilize bolometers of a non-superconducting nature, those fabricated from high-temperature superconducting components, and particularly from films epitaxially deposited upon the substrate, are most preferred.
- a film will generally be deemed to exhibit high-temperature superconducting properties if it demonstrates a maximum zero-resistance state up to 80K, or higher.
- detectors afford an extremely broad band of radiation response, but they are in addition capable of production as monolithic arrays (i.e., etched into a single film) by use of known micro-fabrication techniques, making an extensive detector array possible and integrating effectively with existing silicon wafer and other microelectronic and thin-film technologies.
- the superconducting film employed will preferably be of a compound having the general formula RBa 2 (Cu,M) 3 O.sub.(7- ⁇ ), in which R designates at least one of the rare earth elements: yttrium, lanthanum, neodymium, samarium, europium, gadolinium, dysprosium, lutetium, and holmium, and in which M is either null or designates at least one of the transition elements: silver, gold, nickel, aluminum, zinc, cobalt, iron, palladium and platinum.
- R designates at least one of the rare earth elements: yttrium, lanthanum, neodymium, samarium, europium, gadolinium, dysprosium, lutetium, and holmium
- M is either null or designates at least one of the transition elements: silver, gold, nickel, aluminum, zinc, cobalt, iron, palladium and platinum.
- a primary advantage in the use of high temperature superconducting bolometer devices resides in the exceptional temperature sensitivity that is afforded when the material is on the edge of its transition into the superconducting state. Under those conditions the heat equivalent value of even low-intensity irradiance will raise the temperature of the superconducting film sufficiently to cause a measurable change in its resistance, and hence to enable the generation of an electrical signal that is indicative of the energy passing to the bolometer. More particularly, these detectors utilize a photothermal process to cause electrical responses to the small temperature increases effected by the irradiance.
- Pulsed laser deposition, or laser ablation is advantageously used for synthesizing high-quality thin films of high-temperature superconductor ceramic oxides.
- the use of laser ablation to synthesize films of YBCO on silicon wafer substrates, for example, is found however to require a metal oxide buffer film, which will preferably be of a compound selected from the group consisting of zirconia, yttria, yttria-stabilized zirconia, calcia, calcia-stabilized zirconia, magnesia, ceria, magnesia-stabilized zirconia, LaAlO 3 , BaTiO 3 , SrTiO 3 , and solid solutions of the latter two compounds.
- the buffer film of metal oxide should be deposited substantially epitaxially on the substrate surface, and (as noted above) the ceramic-oxide superconductor film should be deposited substantially epitaxially on the buffer film.
- the substrate will usually be made of a monocrystalline semiconductor material, most desirably a silicon wafer or membrane. It may however be of any suitable alternative material, such as for example GaAs, SrTiO 3 , MgO and yttria-stabilized zirconia. It will be appreciated that the metal oxide buffer film, interposed between the superconductor film layer and the substrate, serves to prevent such chemical reaction therebetween as would tend to destroy the superconductivity of the superconductor film, or to at least significantly depress its superconducting transition temperature. In any event, it is important that any buffer layer employed serve that function while still allowing the growth of a highly oriented superconducting film.
- a buffer film and a superconductor film can be deposited substantially epitaxially upon a semiconductor.
- the substrate is cleaned, passivated, and sequentially coated to produce the buffer and superconductor films; cleaning of the substrate surface may be effected by use of a spin-etch technique, and film deposition may be carried out by pulsed laser ablation.
- a protective layer or cap may also be provided upon the upper surface of the superconductor film, to stabilize it and prevent chemical degradation; cap layers may have the same composition as the buffer films.
- the antireflection coating or interference layer that is superposed upon the array of bolometers, which provides an interference filter of graded thickness; the layer may be bonded to the face of the array, or it may simply be disposed in close proximity to it.
- Most dielectric materials can be employed as the interference layer, provided of course that the material has a finite region of light transmission; standard tables of materials' transmission regions can therefore be used to assist in the selection. It is noted however that silicon exhibits nearly ideal IR-transmission characteristics at 77K, and hence may be employed to provide a very useful interference filter in the mid-infrared to far-infrared range.
- the bolometer and associated filter element be of the same spatial extent; in the case of the stepped layer illustrated, therefore, the areas of the plateaus should match the effective areas of the associated bolometers, and should lie in close registration therewith.
- the optical length through the filter is a function of both the thickness of the layer and also the index of refraction of the material used. Therefore the profile of the interference layer and/or its properties can be varied to achieve the desired result; e.g., to pass a narrow band of radiation, in the case of a thermal- or color-imaging device, or to lead to the most useful transforms for purposes of spectrometry.
- a careful choice of the grading scheme can produce strong fringe contrast across the entire spectral region of interest, and can result in each element of the detector assembly having a spectral response that is partially or largely orthogonal to that of the other elements. It is in fact the extent of orthogonality in the transform that makes it advantageous in spectroscopy, since that renders the decoding algorithm simple, reducing the interference from cross terms.
- a graded interference filter of the character described periodic or pseudoperiodic intensity envelopes are generated over the array of detectors for each wavelength of interest, causing each of the detectors to register a spectral irradiance periodically modulated by passage through constructive and destructive optical interference conditions.
- the periodic nature of light encoding simplifies decoding, and involves the multiple advantage of measuring all wavelengths simultaneously.
- a large throughput of radiation to the detector is achieved, which enhances both the optical efficiency and also the signal-to-noise ratio for any given spectral acquisition.
- the level of resolution of a certain wavelength spectrum will vary in direct relationship to the number of detectors present in the assembly.
- an array of 1000 or more detectors will be employed, arranged as rectilinear, triangular, or rectangular arrays, or in any other suitable configuration.
- the associated mechanical, optical, electronic, circuitry, and data-processing components and software of any apparatus utilizing the detector assembly of the invention will of course be specifically adapted to an intended purpose, and the design, construction, implementation, and arrangement thereof will be evident to those skilled in the art. Nevertheless, it might be pointed out specifically that, in a spectrometer system, electronic circuitry will be provided to scan the detector array into a memory unit, where a computational transform would be applied to reconstruct the spectrum.
- applications involving the infrared region of the spectrum have been stressed herein, and will in many instances represent the best mode for carrying out the present invention, it will be appreciated that the underlying concepts will often be equally as applicable to other spectral regions.
- the present invention provides a novel detector assembly that is capable of discriminating, as a function of wavelength, spectral radiation impinging thereupon, and that is suitable for use in apparatus for transform spectroscopy, color-imaging, and the like.
- the detectors are wavelength programmable to afford great flexibility of application, and the assembly and apparatus of the invention may be very small and highly compact, durable, incomplex, and relatively inexpensive to construct, while affording outstanding levels of sensitivity and speed of response.
Abstract
An array of superconducting bolometers, assembled with a superposed interference layer of graduated thickness, provides a microelectronic detector assembly that discriminates radiation impinging thereon, as a function of wavelength, and that can be used for transform spectroscopy, color-imaging, and the like. The interference coating will preferably be of step-like form, with each plateau of the structure being of the same spatial extent as the bolometer with which it is associated.
Description
The United States Government has rights in this invention pursuant to Contract No. ISI-9160506, awarded by the National Science Foundation.
This invention relates to integrated radiation detector assemblies, and to spectrometers and other apparatus incorporating the same.
Conventional methods of infrared spectroscopy utilize either a small throughput (IR flux) optical element for dispersion, followed by a detector or a detector array, or a large throughput, scanning interferometer followed by a detector. In application of the first technique, the spectrum is accessed directly in the wavelength and frequency domain, while in the second the spectrum is measured in the time domain and then transformed (typically using Fourier algorithms) by a post-measurement calculation to the wavenumber domain.
As is known to those skilled in the art, the first method is relatively simple to implement, but is also of relatively low sensitivity due to the small amount of light throughput involved; in addition, long scanning times are required if the spectral range encompassed is substantial, and the instrument itself must be fairly large if good resolution is to be had. On the other hand, methods using scanning interferometers find wide application in Fourier-transform infrared (FT-IR) spectroscopy and in other specialized applications (e.g., piezoelectric scanning Fabry-Perot interferometers), but the instruments employed can be very complex and expensive, and can lack durability, largely because of their requirement for high-precision moving optics.
Additional limitations, common to both spectroscopy methods described, are related to the materials presently available for IR detectors. Current detector technology is based either upon photoelectric semiconductor materials, which are of a narrow band character, or upon broad-band but low-sensitivity photo-thermal materials, which are of slow response; both kinds of materials are, in addition, difficult to fabricate into satisfactory arrays.
Accordingly, it is the broad object of the present invention to provide a novel detector assembly that is capable of discriminating, as a function of wavelength, spectral radiation impinging thereupon.
More specific objects of the invention are to provide such an assembly which is itself capable of directly accomplishing transform spectroscopy, and to provide a spectrometer incorporating the same.
Other specific objects are to provide such an assembly which is adapted for use in color-imaging applications, and to provide color-imaging apparatus incorporating the same.
Additional objects of the invention are to provide such a detector assembly, spectrometer and other apparatus that is small and compact, durable, incomplex and relatively inexpensive to construct, and that nevertheless provides outstanding levels of sensitivity and response speed.
It has now been found that certain of the foregoing and related objects of the invention are attained by the provision of a detector assembly comprised of a plurality of superconductor bolometers arranged as an array, and a superposed anti-reflection layer functioning as a graded interference filter. The bolometers have substantially contiguous operative surfaces that provide at least one planar face for irradiation, and all of them are responsive to radiation throughout substantially a given range of wavelengths. The interference layer is superposed upon the irradiation face of the array, with an associated region in registry with each of the bolometers; it is composed of a material that transmits selectively, as a function of its thickness, multiple bands of wavelengths of radiation in the given range. The several regions of the interference layer vary in thickness to thereby provide, in combination with the associated bolometers, a plurality of detectors that differ from one another in their radiation wavelength response.
In the preferred embodiments of the invention each region of the interference layer will be of substantially constant thickness throughout, and will be dimensioned and configured to intercept and filter substantially all of the radiation that impinges upon the associated bolometer. Indeed, certain objects of the invention may be attained by the provision of a detector assembly that employs nonsuperconducting photothermal detectors (e.g., bolometers) in combination with an interference layer of such structure. The layer will, in any event, advantageously be of step-like form and will normally be of uniform composition throughout. The bolometers will most desirably be fabricated from a high temperature superconducting film that is epitaxial on the underlying substrate, formed as a meanderline element and responsive to wavelengths in the range 1 μm to 1000 μm, and most desirably in the infrared region of the spectrum.
The assembly will generally include a substrate that is at least coextensive with the bolometer array, in which case the interference layer may be disposed outwardly adjacent either the substrate or the bolometer array. Although a submicron air gap may be present, the assembly will preferably be devoid of spacing between the irradiation face and the interference layer when those components are adjacently disposed; a buffer film will usually be interposed between the array and the substrate, and a passivation layer may be provided on the face of the array that is opposite to the substrate.
Other objects of the invention are attained by the provision of a spectrometer comprising, in combination: a superconductor detector assembly, as described herein; means for maintaining the assembly at cryogenic temperatures in a range for varying the conductance of the bolometers; means, operatively connected to the array, for generating electrical currents indicative of the conductance of the bolometers after passage therethrough; and electronic data processing means for transforming the currents generated so as to produce signals representative of the energy of radiation caused to impinge upon the irradiation face, discriminated as a function of wavelength. Preferred embodiments of the spectrometer will further include means for causing radiation to impinge upon the irradiation face of the bolometer array, as well as a radiation source for generating spectral radiation within the range of intended operation. The data processing means will most desirably function to apply matrix-inversion transform algorithms (e.g., Fourier and bilinear) to the generated electrical currents, for producing the representative signals.
Additional objects are attained by the provision of a color-imaging apparatus in which is included a substrate having an irradiation surface, on which is arranged a multiplicity of the detector assemblies described. The detector assemblies all include the same combination of detectors having different response characteristics, and they are arranged with the bolometers exposed for irradiation on the substrate surface; typically, each detector assembly will consist of three different detectors. Additionally included in the apparatus may be means for causing radiation to impinge upon the irradiation surface, means operatively connected to the bolometers for generating electrical currents, and display means operatively connected for receiving such currents from the means for generating and the bolometers, and for displaying the spatial distribution of different wavelength components of the impinging radiation.
FIG. 1 is a diagrammatic perspective view of a rectilinear detector assembly embodying the present invention, suitable for use in transform spectroscopy;
FIG. 2 is a fragmentary, diagrammatic elevational view of the assembly of FIG. 1;
FIG. 3 is a fragmentary, diagrammatic elevational view showing an alternative arrangement of the components of the assembly of the preceding Figures;
FIG. 4 is a view similar to FIGS. 2 and 3, illustrating a further embodiment of the detector assembly in which no separate substrate component is employed;
FIG. 5 is a plan view of a bolometer array and associated contact pads, suitable for use in fabricating the detectors employed in the assemblies of the invention;
FIG. 6 is a diagrammatic representation of a spectrometer embodying the present invention; and
FIG. 7 is a diagrammatic perspective view of a panel for three-color imaging apparatus embodying the invention.
Turning initially to FIGS. 1 and 2 of the drawings, the detector assembly illustrated consists of a substrate 10 (e.g., a silicon wafer), a buffer film 12 (e.g., of yttrium-stabilized zirconia) deposited thereupon, a bolometer array made of a high-temperature superconducting film (e.g., YBCO), generally designated by the numeral 14, and, as a graded interference filter, an interference layer, generally designated by the numeral 16, superposed upon the bolometer array. Each of the steps 16a, 16b, 16c and 16d of the layer 16 overlies and registers with the operative area an associated bolometer 14a, 14b, 14c and 14d of the array 14, thereby rendering the bolometers effective to detect different, narrow interference bands of radiation; the bolometer 14e remains responsive to a broad range of wavelengths, as being unattenuated by filtration, and functions as a reference detector.
The detector assembly of FIG. 3 is fabricated from the same components (omitting however the bolometer 14e), arranged for backside illumination. Thus, rather than being disposed between the substrate and the filter, the bolometer array 14' is positioned on the surface of the substrate 10 (with an interposed buffer layer 12) opposite to that on which the interference layer 16 is disposed. In the assembly of FIG. 4, the layer 16' serves both as the substrate for the array 14' and also as the interference filter.
FIG. 5 shows a series-connected "quad" bolometer array pattern, fabricated (as by a microlithographic technique) from a single film of material and carried upon a substrate. Each of the bolometers 14a through 14d consists of a meanderline, to which is connected suitable electrical contact pads 18.
The spectrometer apparatus of FIG. 6 utilizes a superconductor detector assembly, generally designated by the numeral 20, comprised of the components 10, 12, 14 and 16 (not shown), formed and arranged as hereinabove described with reference to the preceding Figures. The assembly 20 is supported upon a refrigerated cryostage mounting block 22, surrounded by cryostat walls 30; an electrical heater 24 is embedded in the block 22, the power to which is regulated by the temperature controller (TC) 26 in response to the cryostage temperature, as measured by the thermometer 28. The detector assembly 20 is positioned for illumination by radiation reflected from a focusing mirror 34 through the window 32. A power supply 33 is connected to the bolometers of the assembly 20. Current passing through the bolometers from the power supply 33, as affected by their conductance in response to transmitted radiant energy, generates electrical signals at the contact pads 18. The signals are in turn processed by application of transform algorithms in the computer (PC) 36, passing thereto through a multiplexer (MUX) 40, a preamplifier (PA) 42, and an analog-to-digital converter (ADC) 44, all in a conventional manner.
A panel suitable for use in three-color imaging apparatus is depicted in FIG. 7, and consists of a substrate 50 of semiconductor material, upon which is deposited a buffer film 52. Numerous identical detector assemblies are formed upon what is to be the irradiation surface of the panel, each assembly being composed of the same triangular array of three detectors 54a, 54b and 54c. Although not specifically illustrated, it will be appreciated that a superposed graded interference filter renders each detector of the assembly responsive to a selected radiation "color" band that is different from the bands to which the other two detectors respond; multilayer coatings may be employed in certain instances to further define the sensitivity of the detectors. A power supply 56 and a video display terminal 58 are operatively connected to the panel, with the terminal serving of course to display, as a function of wavelength, the spatial distribution of the components of the impinging radiation.
Although certain embodiments of the instant detector assembly may utilize bolometers of a non-superconducting nature, those fabricated from high-temperature superconducting components, and particularly from films epitaxially deposited upon the substrate, are most preferred. In accordance herewith, a film will generally be deemed to exhibit high-temperature superconducting properties if it demonstrates a maximum zero-resistance state up to 80K, or higher. Not only can such detectors afford an extremely broad band of radiation response, but they are in addition capable of production as monolithic arrays (i.e., etched into a single film) by use of known micro-fabrication techniques, making an extensive detector array possible and integrating effectively with existing silicon wafer and other microelectronic and thin-film technologies. These factors in turn make feasible the provision of an on-chip spectrometer and other microelectronic optical devices, using the detector assemblies described, with the self-evident benefits that are attendant thereto.
The superconducting film employed will preferably be of a compound having the general formula RBa2 (Cu,M)3 O.sub.(7-δ), in which R designates at least one of the rare earth elements: yttrium, lanthanum, neodymium, samarium, europium, gadolinium, dysprosium, lutetium, and holmium, and in which M is either null or designates at least one of the transition elements: silver, gold, nickel, aluminum, zinc, cobalt, iron, palladium and platinum. It will be appreciated that the foregoing general formula implies non-exact stoichiometry, and that most commonly the superconductor film will be of a yttrium-barium-copper-oxygen (YBCO) compound.
As will be appreciated by those skilled in the art, a primary advantage in the use of high temperature superconducting bolometer devices resides in the exceptional temperature sensitivity that is afforded when the material is on the edge of its transition into the superconducting state. Under those conditions the heat equivalent value of even low-intensity irradiance will raise the temperature of the superconducting film sufficiently to cause a measurable change in its resistance, and hence to enable the generation of an electrical signal that is indicative of the energy passing to the bolometer. More particularly, these detectors utilize a photothermal process to cause electrical responses to the small temperature increases effected by the irradiance. By maintaining the film temperature near that for the middle of the resistive transition to the superconducting state, and by use of a suitable film pattern, a large resistance change will accompany small irradiances, typically a few μV to a few mV response per μW of irradiance; thus, spectral sensitivity is very high.
Pulsed laser deposition, or laser ablation, is advantageously used for synthesizing high-quality thin films of high-temperature superconductor ceramic oxides. The use of laser ablation to synthesize films of YBCO on silicon wafer substrates, for example, is found however to require a metal oxide buffer film, which will preferably be of a compound selected from the group consisting of zirconia, yttria, yttria-stabilized zirconia, calcia, calcia-stabilized zirconia, magnesia, ceria, magnesia-stabilized zirconia, LaAlO3, BaTiO3, SrTiO3, and solid solutions of the latter two compounds. The buffer film of metal oxide should be deposited substantially epitaxially on the substrate surface, and (as noted above) the ceramic-oxide superconductor film should be deposited substantially epitaxially on the buffer film.
The substrate will usually be made of a monocrystalline semiconductor material, most desirably a silicon wafer or membrane. It may however be of any suitable alternative material, such as for example GaAs, SrTiO3, MgO and yttria-stabilized zirconia. It will be appreciated that the metal oxide buffer film, interposed between the superconductor film layer and the substrate, serves to prevent such chemical reaction therebetween as would tend to destroy the superconductivity of the superconductor film, or to at least significantly depress its superconducting transition temperature. In any event, it is important that any buffer layer employed serve that function while still allowing the growth of a highly oriented superconducting film.
Although constituting no part of the instant invention, techniques are known by which a buffer film and a superconductor film can be deposited substantially epitaxially upon a semiconductor. In accordance therewith, the substrate is cleaned, passivated, and sequentially coated to produce the buffer and superconductor films; cleaning of the substrate surface may be effected by use of a spin-etch technique, and film deposition may be carried out by pulsed laser ablation. A protective layer or cap may also be provided upon the upper surface of the superconductor film, to stabilize it and prevent chemical degradation; cap layers may have the same composition as the buffer films.
Central to the invention is of course the antireflection coating or interference layer that is superposed upon the array of bolometers, which provides an interference filter of graded thickness; the layer may be bonded to the face of the array, or it may simply be disposed in close proximity to it. Most dielectric materials can be employed as the interference layer, provided of course that the material has a finite region of light transmission; standard tables of materials' transmission regions can therefore be used to assist in the selection. It is noted however that silicon exhibits nearly ideal IR-transmission characteristics at 77K, and hence may be employed to provide a very useful interference filter in the mid-infrared to far-infrared range. Moreover, the fact that silicon functions in such a highly effective manner, in combination with the superconducting films described, makes feasible the detector assembly shown in FIG. 4. But as a second example, if the spectral range of interest were from the visible to below 5 μm, ZrO2 could be used as the interference layer.
Physically, it is important that the bolometer and associated filter element be of the same spatial extent; in the case of the stepped layer illustrated, therefore, the areas of the plateaus should match the effective areas of the associated bolometers, and should lie in close registration therewith. As will be appreciated, the optical length through the filter is a function of both the thickness of the layer and also the index of refraction of the material used. Therefore the profile of the interference layer and/or its properties can be varied to achieve the desired result; e.g., to pass a narrow band of radiation, in the case of a thermal- or color-imaging device, or to lead to the most useful transforms for purposes of spectrometry. A careful choice of the grading scheme can produce strong fringe contrast across the entire spectral region of interest, and can result in each element of the detector assembly having a spectral response that is partially or largely orthogonal to that of the other elements. It is in fact the extent of orthogonality in the transform that makes it advantageous in spectroscopy, since that renders the decoding algorithm simple, reducing the interference from cross terms.
Using a graded interference filter of the character described, periodic or pseudoperiodic intensity envelopes are generated over the array of detectors for each wavelength of interest, causing each of the detectors to register a spectral irradiance periodically modulated by passage through constructive and destructive optical interference conditions. The periodic nature of light encoding simplifies decoding, and involves the multiple advantage of measuring all wavelengths simultaneously. In addition, a large throughput of radiation to the detector is achieved, which enhances both the optical efficiency and also the signal-to-noise ratio for any given spectral acquisition.
It goes without saying that the level of resolution of a certain wavelength spectrum will vary in direct relationship to the number of detectors present in the assembly. Typically, an array of 1000 or more detectors will be employed, arranged as rectilinear, triangular, or rectangular arrays, or in any other suitable configuration. The associated mechanical, optical, electronic, circuitry, and data-processing components and software of any apparatus utilizing the detector assembly of the invention will of course be specifically adapted to an intended purpose, and the design, construction, implementation, and arrangement thereof will be evident to those skilled in the art. Nevertheless, it might be pointed out specifically that, in a spectrometer system, electronic circuitry will be provided to scan the detector array into a memory unit, where a computational transform would be applied to reconstruct the spectrum. Although applications involving the infrared region of the spectrum have been stressed herein, and will in many instances represent the best mode for carrying out the present invention, it will be appreciated that the underlying concepts will often be equally as applicable to other spectral regions.
Thus, it can be seen that the present invention provides a novel detector assembly that is capable of discriminating, as a function of wavelength, spectral radiation impinging thereupon, and that is suitable for use in apparatus for transform spectroscopy, color-imaging, and the like. The detectors are wavelength programmable to afford great flexibility of application, and the assembly and apparatus of the invention may be very small and highly compact, durable, incomplex, and relatively inexpensive to construct, while affording outstanding levels of sensitivity and speed of response.
Claims (18)
1. A transform spectrometer comprising, in combination:
(1) a detector assembly for discriminating as a function of wavelength, radiation impinging thereon, said detector assembly comprising:
a plurality of superconductor bolometers arranged as an array and having substantially contiguous operative surfaces providing at least one planar irradiation face, all of said bolometers being responsive to radiation throughout a given range of wavelengths; and an interference layer superposed upon said irradiation face of said array with an associated region of said layer in registry with each of said bolometers, said layer being composed of a material that produces constructive and destructive optical interference conditions to periodically modulate, and thereby transmit selectively as a function of layer thickness, multiple bands of wavelengths of radiation in said range, said regions differing from one another in thickness so as to constitute said layer a graded interference filter, and to thereby provide a plurality of detectors that differ from one another in their response to radiation within said given range, each of said detectors registering a spectral irradiance periodically modulated, thereby being capable of discriminating a plurality of wavelength bands;
(2) means for maintaining said detector assembly at cryogenic temperatures in a range for varying the conductance of said bolometers;
(3) means for generating electrical currents, said means for generating being operatively connected to said array; and
(4) electronic data processing means for transforming said currents, after passage through said bolometers of said array, so as to produce signals representative of the energy of radiation caused to impinge upon said irradiation face, discriminated as a function of wavelength said data processing means functioning to apply matrix-inversion transform algorithms to said electrical current, for producing such signals.
2. The spectrometer of claim 1 wherein the thickness of each of said regions of said interference layer is substantially constant, and wherein each of said regions is dimensioned and configured to intercept and filter substantially all of the radiation that impinges upon said bolometer associated therewith.
3. The spectrometer of claim 2 wherein said layer is of step-like form.
4. The spectrometer of claim 1 wherein said layer is of uniform composition throughout.
5. The spectrometer of claim 4 wherein said layer is composed of silicon.
6. The spectrometer of claim 1 wherein said bolometers are fabricated from a high-temperature superconducting film.
7. The spectrometer of claim 6 wherein said superconducting film is composed of a compound having the general formula RBa2 (Cu,M)3 O.sub.(7-δ), in which R designates at least one of the rare earth elements: yttrium, lanthanum, neodymium, samarium, europium, gadolinium, dysprosium, lutetium, and holmium, and in which M is either null or designates at least one of the transition elements: silver, gold, nickel, aluminum, zinc, cobalt, iron, palladium and platinum.
8. The spectrometer of claim 6 wherein said film is epitaxial on the underlying substrate.
9. The spectrometer of claim 6 wherein each of said bolometers comprises a meanderline element.
10. The spectrometer of claim 1 wherein said range of wavelengths to which said bolometers are responsive is 1 μm to 1000 μm.
11. The spectrometer of claim 1 further including a substrate that is at least coextensive with said bolometer array, said interference layer being disposed outwardly adjacent either said substrate or said array.
12. The spectrometer of claim 11 wherein said substrate comprises a silicon wafer.
13. The spectrometer of claim 11 further including a buffer film interposed between said array and said substrate.
14. The spectrometer of claim 1 wherein said assembly is devoid of spacing between said irradiation face and said interference layer.
15. The spectrometer of claim 1 further including means for causing radiation to impinge upon said irradiation face of said array.
16. The spectrometer of claim 1 wherein said spectrometer further includes a radiation source for generating spectral radiation within said given range.
17. The spectrometer of claim 1 wherein said given range of wavelengths to which said bolometers respond comprises the infrared region of the spectrum. .Iadd.
18. A transform spectrometer comprising, in combination:
(1) a detector assembly for discriminating, as a function of wavelength, radiation impinging thereon, said detector assembly comprising: a plurality of photothermal detector elements arranged as an array and having substantially contiguous operative surfaces providing at least one planar irradiation face, all of said detector elements being responsive to radiation throughout a given range of wavelengths; and an interference layer superposed upon said irradiation face of said array with an associated region of said layer in registry with each of said detector elements, said layer being composed of a material that produces constructive and destructive optical interference conditions to periodically modulate, and thereby transmit selectively as a function of layer thickness, multiple bands of wavelengths of radiation in said range, said regions differing from one another in thickness so as to constitute said layer a graded interference filter, and to thereby provide a plurality of detectors that differ from one another in their response to radiation within said given range, each of said detectors registering a spectral irradiance periodically modulated, thereby being capable of discriminating a plurality of wavelength bands;
(2) means for generating electrical currents, said means for generating being operatively connected to said array; and
(3) electronic data processing means operatively connected for transforming electrical currents from said means for generating, after passage through said detector elements of said array, so as to produce signals representative of the energy of radiation caused to impinge upon said irradiation face, discriminated as a function of wavelength, said data processing means functioning to apply matrix-inversion transform algorithms to said electrical currents, for producing such signals..Iaddend.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/633,483 USRE35872E (en) | 1992-12-28 | 1996-04-17 | Superconducting detector assembly and apparatus utilizing same |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/997,457 US5354989A (en) | 1992-12-28 | 1992-12-28 | Superconducting detector assembly and apparatus utilizing same |
US08/633,483 USRE35872E (en) | 1992-12-28 | 1996-04-17 | Superconducting detector assembly and apparatus utilizing same |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US07/997,457 Reissue US5354989A (en) | 1992-12-28 | 1992-12-28 | Superconducting detector assembly and apparatus utilizing same |
Publications (1)
Publication Number | Publication Date |
---|---|
USRE35872E true USRE35872E (en) | 1998-08-18 |
Family
ID=25544054
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US07/997,457 Ceased US5354989A (en) | 1992-12-28 | 1992-12-28 | Superconducting detector assembly and apparatus utilizing same |
US08/633,483 Expired - Fee Related USRE35872E (en) | 1992-12-28 | 1996-04-17 | Superconducting detector assembly and apparatus utilizing same |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US07/997,457 Ceased US5354989A (en) | 1992-12-28 | 1992-12-28 | Superconducting detector assembly and apparatus utilizing same |
Country Status (3)
Country | Link |
---|---|
US (2) | US5354989A (en) |
AU (1) | AU6016294A (en) |
WO (1) | WO1994015185A1 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6344416B1 (en) * | 2000-03-10 | 2002-02-05 | International Business Machines Corporation | Deliberate semiconductor film variation to compensate for radial processing differences, determine optimal device characteristics, or produce small productions |
US6648503B2 (en) * | 2000-01-14 | 2003-11-18 | Seiko Instruments Inc. | Calorimeter and manufacturing method thereof |
US6713763B2 (en) * | 2001-08-02 | 2004-03-30 | Nec Corporation | Oxide thin film for a bolometer, process for producing the same, and infrared sensor using the same |
NL2003572C2 (en) * | 2009-09-29 | 2011-03-30 | Univ Delft Tech | Read-out of superconducting single photon detectors. |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5821598A (en) * | 1995-02-01 | 1998-10-13 | Research Corporation Technologies, Inc. | Uncooled amorphous YBaCuO thin film infrared detector |
US5572060A (en) * | 1995-02-01 | 1996-11-05 | Southern Methodist University | Uncooled YBaCuO thin film infrared detector |
US6812464B1 (en) * | 2000-07-28 | 2004-11-02 | Credence Systems Corporation | Superconducting single photon detector |
CN100449764C (en) * | 2003-11-18 | 2009-01-07 | 松下电器产业株式会社 | Photodetector |
EP2833106A4 (en) * | 2012-03-27 | 2015-04-22 | Shimadzu Corp | Photodiode array for spectroscopic measurement, and spectroscopic measurement apparatus |
WO2022147919A1 (en) * | 2021-01-06 | 2022-07-14 | 苏州联讯仪器有限公司 | Broadband spectrometer |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB722749A (en) * | 1951-07-25 | 1955-01-26 | Philco Corp | Optical colour filter |
EP0223136A2 (en) * | 1985-11-18 | 1987-05-27 | International Business Machines Corporation | Planar process and structure for spectral filters in an optoelectronic device |
US5043580A (en) * | 1989-01-13 | 1991-08-27 | Thomson-Csf | Radiation detector |
US5171733A (en) * | 1990-12-04 | 1992-12-15 | The Regents Of The University Of California | Antenna-coupled high Tc superconducting microbolometer |
-
1992
- 1992-12-28 US US07/997,457 patent/US5354989A/en not_active Ceased
-
1993
- 1993-12-23 WO PCT/US1993/012646 patent/WO1994015185A1/en active Application Filing
- 1993-12-23 AU AU60162/94A patent/AU6016294A/en not_active Abandoned
-
1996
- 1996-04-17 US US08/633,483 patent/USRE35872E/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB722749A (en) * | 1951-07-25 | 1955-01-26 | Philco Corp | Optical colour filter |
EP0223136A2 (en) * | 1985-11-18 | 1987-05-27 | International Business Machines Corporation | Planar process and structure for spectral filters in an optoelectronic device |
US5043580A (en) * | 1989-01-13 | 1991-08-27 | Thomson-Csf | Radiation detector |
US5171733A (en) * | 1990-12-04 | 1992-12-15 | The Regents Of The University Of California | Antenna-coupled high Tc superconducting microbolometer |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6648503B2 (en) * | 2000-01-14 | 2003-11-18 | Seiko Instruments Inc. | Calorimeter and manufacturing method thereof |
US6344416B1 (en) * | 2000-03-10 | 2002-02-05 | International Business Machines Corporation | Deliberate semiconductor film variation to compensate for radial processing differences, determine optimal device characteristics, or produce small productions |
US6713763B2 (en) * | 2001-08-02 | 2004-03-30 | Nec Corporation | Oxide thin film for a bolometer, process for producing the same, and infrared sensor using the same |
NL2003572C2 (en) * | 2009-09-29 | 2011-03-30 | Univ Delft Tech | Read-out of superconducting single photon detectors. |
WO2011040809A1 (en) * | 2009-09-29 | 2011-04-07 | Technische Universiteit Delft | Read-out of superconducting single photon detectors |
Also Published As
Publication number | Publication date |
---|---|
AU6016294A (en) | 1994-07-19 |
US5354989A (en) | 1994-10-11 |
WO1994015185A1 (en) | 1994-07-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Almasri et al. | Self-supporting uncooled infrared microbolometers with low-thermal mass | |
EP0590738B1 (en) | Light detecting device and light detecting method using a superconductor | |
USRE35872E (en) | Superconducting detector assembly and apparatus utilizing same | |
CN107101728B (en) | A kind of double-colored polarized ir detector of non-brake method and its manufacturing method | |
US5347128A (en) | Directional emittance surface measurement system and process | |
Demirhan et al. | Metal mesh filters based on Ti, ITO and Cu thin films for terahertz waves | |
Ryger et al. | Uncooled antenna-coupled microbolometer for detection of terahertz radiation | |
Fenner et al. | Optical and thermal performance advantages for silicon substrates in YBCO bolometer devices | |
Lakew et al. | High-Tc superconducting bolometer on chemically-etched 7 μm thick sapphire | |
Khrebtov et al. | High-temperature superconductor bolometers for the IR region | |
Kumar et al. | Far-infrared transmittance and reflectance of YBa2Cu3O7-δ films on Si substrates | |
Wentworth et al. | Composite microbolometers with tellurium detector elements | |
Sánchez et al. | A high-T/sub c/superconductor bolometer on a silicon nitride membrane | |
Khrebtov | Noise properties of high temperature superconducting bolometers | |
Almasri et al. | Semiconducting YBaCuO microbolometers for uncooled broadband IR sensing | |
Cole et al. | High performance infrared detector arrays using thin film microstructures | |
Khrebtov et al. | High-temperature superconducting bolometers based on silicon-membrane technology | |
Bean | Thermal infrared detection using antenna-coupled metal-oxide-metal diodes | |
Savoy et al. | Application of superconducting technologies as chemical/biological agent electronic eyes | |
Cole | High-Tc superconducting infrared bolometric detector | |
Johnson et al. | High-performance linear arrays of YBa2Cu3O7 superconducting infrared microbolometers on silicon | |
Moahjeri et al. | Demonstration of Thermal Images Captured by a Backside Illuminated Transition Edge Bolometer | |
Khrebtov | Noise of High Temperature Superconducting Bolometers | |
Rogalski | Thermal Detectors | |
Pekerten | Pixel array application of high temperature superconducting ybco transition edge infrared bolometers |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
FPAY | Fee payment |
Year of fee payment: 8 |
|
LAPS | Lapse for failure to pay maintenance fees |