USRE34227E - Non-cyanide electrode cleaning process - Google Patents
Non-cyanide electrode cleaning process Download PDFInfo
- Publication number
- USRE34227E USRE34227E US07/710,853 US71085391A USRE34227E US RE34227 E USRE34227 E US RE34227E US 71085391 A US71085391 A US 71085391A US RE34227 E USRE34227 E US RE34227E
- Authority
- US
- United States
- Prior art keywords
- metal
- solution
- immersing
- leads
- iadd
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 97
- 238000000034 method Methods 0.000 title claims abstract description 81
- 229910052751 metal Inorganic materials 0.000 claims abstract description 105
- 239000002184 metal Substances 0.000 claims abstract description 105
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 claims abstract description 92
- 239000004033 plastic Substances 0.000 claims abstract description 72
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 48
- 239000010949 copper Substances 0.000 claims abstract description 48
- 229910052802 copper Inorganic materials 0.000 claims abstract description 48
- 239000004310 lactic acid Substances 0.000 claims abstract description 45
- 235000014655 lactic acid Nutrition 0.000 claims abstract description 45
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 42
- 229910001868 water Inorganic materials 0.000 claims abstract description 38
- 239000011347 resin Substances 0.000 claims abstract description 31
- 229920005989 resin Polymers 0.000 claims abstract description 31
- 229910052709 silver Inorganic materials 0.000 claims abstract description 25
- 239000004332 silver Substances 0.000 claims abstract description 25
- 229910000000 metal hydroxide Inorganic materials 0.000 claims abstract description 23
- 150000004692 metal hydroxides Chemical class 0.000 claims abstract description 23
- 229910000510 noble metal Inorganic materials 0.000 claims abstract description 17
- KWYUFKZDYYNOTN-UHFFFAOYSA-M potassium hydroxide Inorganic materials [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 77
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 57
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 24
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 15
- 239000001521 potassium lactate Substances 0.000 claims description 14
- 235000011085 potassium lactate Nutrition 0.000 claims description 14
- 229960001304 potassium lactate Drugs 0.000 claims description 14
- 239000002798 polar solvent Substances 0.000 claims description 11
- 229910052700 potassium Inorganic materials 0.000 claims description 11
- 239000001540 sodium lactate Substances 0.000 claims description 11
- 235000011088 sodium lactate Nutrition 0.000 claims description 11
- 229940005581 sodium lactate Drugs 0.000 claims description 11
- CYDQOEWLBCCFJZ-UHFFFAOYSA-N 4-(4-fluorophenyl)oxane-4-carboxylic acid Chemical compound C=1C=C(F)C=CC=1C1(C(=O)O)CCOCC1 CYDQOEWLBCCFJZ-UHFFFAOYSA-N 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 claims description 9
- JVTAAEKCZFNVCJ-UHFFFAOYSA-M Lactate Chemical compound CC(O)C([O-])=O JVTAAEKCZFNVCJ-UHFFFAOYSA-M 0.000 claims description 6
- 229940001447 lactate Drugs 0.000 claims description 6
- 150000007522 mineralic acids Chemical class 0.000 claims description 6
- 230000000737 periodic effect Effects 0.000 claims description 6
- -1 oxide Substances 0.000 claims description 3
- 239000000243 solution Substances 0.000 claims 65
- 239000007769 metal material Substances 0.000 claims 14
- 229910052755 nonmetal Inorganic materials 0.000 claims 14
- 235000014443 Pyrus communis Nutrition 0.000 claims 1
- 239000007864 aqueous solution Substances 0.000 claims 1
- 238000007747 plating Methods 0.000 abstract description 45
- 238000005530 etching Methods 0.000 abstract description 6
- 150000003893 lactate salts Chemical class 0.000 abstract description 4
- 150000002825 nitriles Chemical class 0.000 abstract description 3
- 231100001261 hazardous Toxicity 0.000 abstract 1
- 239000000463 material Substances 0.000 description 30
- 238000005422 blasting Methods 0.000 description 28
- 238000005538 encapsulation Methods 0.000 description 23
- 238000011282 treatment Methods 0.000 description 20
- 229910000679 solder Inorganic materials 0.000 description 15
- 239000002253 acid Substances 0.000 description 12
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 150000002739 metals Chemical class 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- PHZLMBHDXVLRIX-UHFFFAOYSA-M potassium lactate Chemical compound [K+].CC(O)C([O-])=O PHZLMBHDXVLRIX-UHFFFAOYSA-M 0.000 description 6
- 239000010935 stainless steel Substances 0.000 description 6
- 229910001220 stainless steel Inorganic materials 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 238000007654 immersion Methods 0.000 description 5
- 229910000881 Cu alloy Inorganic materials 0.000 description 4
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical compound N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 description 4
- 230000002411 adverse Effects 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- JEGUKCSWCFPDGT-UHFFFAOYSA-N h2o hydrate Chemical compound O.O JEGUKCSWCFPDGT-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 239000011538 cleaning material Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 230000036961 partial effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- BSYNFGPFPYSTTM-UHFFFAOYSA-N 2-hydroxypropanoic acid;hydrate Chemical compound O.CC(O)C(O)=O BSYNFGPFPYSTTM-UHFFFAOYSA-N 0.000 description 2
- 241001206158 Blepsias cirrhosus Species 0.000 description 2
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 235000009827 Prunus armeniaca Nutrition 0.000 description 2
- 244000018633 Prunus armeniaca Species 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 150000001735 carboxylic acids Chemical class 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 235000013305 food Nutrition 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 150000004679 hydroxides Chemical class 0.000 description 2
- 230000002401 inhibitory effect Effects 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000000088 plastic resin Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000011591 potassium Substances 0.000 description 2
- 238000010561 standard procedure Methods 0.000 description 2
- 238000009736 wetting Methods 0.000 description 2
- KRKNYBCHXYNGOX-UHFFFAOYSA-K Citrate Chemical compound [O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O KRKNYBCHXYNGOX-UHFFFAOYSA-K 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- VMHLLURERBWHNL-UHFFFAOYSA-M Sodium acetate Chemical compound [Na+].CC([O-])=O VMHLLURERBWHNL-UHFFFAOYSA-M 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 235000011054 acetic acid Nutrition 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000004480 active ingredient Substances 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- DMFGNRRURHSENX-UHFFFAOYSA-N beryllium copper Chemical compound [Be].[Cu] DMFGNRRURHSENX-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 235000015165 citric acid Nutrition 0.000 description 1
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid group Chemical class C(CC(O)(C(=O)O)CC(=O)O)(=O)O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 1
- 238000012864 cross contamination Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 238000010137 moulding (plastic) Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- SCVFZCLFOSHCOH-UHFFFAOYSA-M potassium acetate Substances [K+].CC([O-])=O SCVFZCLFOSHCOH-UHFFFAOYSA-M 0.000 description 1
- 235000011056 potassium acetate Nutrition 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000001632 sodium acetate Substances 0.000 description 1
- 235000017281 sodium acetate Nutrition 0.000 description 1
- 235000002639 sodium chloride Nutrition 0.000 description 1
- 229960002167 sodium tartrate Drugs 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000010186 staining Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
- H01L21/4835—Cleaning, e.g. removing of solder
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F1/00—Electrolytic cleaning, degreasing, pickling or descaling
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F5/00—Electrolytic stripping of metallic layers or coatings
Definitions
- This invention relates to a process for manufacturing electronic devices and, more particularly, a process for cleaning the leads of electronic devices and other parts.
- leadframes for supporting and providing external leads to electronic elements such as semiconductor die.
- the leadframes are of a wide variety of metals including but not limited to, copper and copper alloys.
- a typical prior art leadframe suitable for forming a fourteen lead a dual-in-line package is shown in simplified plan view in FIG. 1.
- FIG. 2 shows the leadframe of FIG. 1 after die attach and plastic encapsulation and before plastic deflash. It is usual during encapsulation molding to have plastic fill the gaps between the leads and the leadframe dam bars, i.e., inter-lead plastic. Sometimes, when molding is less than perfect there will also be a thin plastic flash on the flat portions of the leads, i.e., over-lead plastic flash. The plastic package body, the inter-lead plastic and the overlead plastic flash are indicated by the more heavily stippled regions in FIG. 2. In addition, some of the resin which makes up the resin-filler encapsulation material may be extruded from the encapsulation onto the leads, resulting is what is called "resin bleed". Resin bleed is often colorless and very difficult to detect.
- FIG. 3 shows the leadframe after the dam bars, side-rails, inter-lead and over-lead plastic flash are removed.
- the inter-lead plastic is typically removed during trimming of the leadframe to remove the dam bars and side-rails.
- the over-lead plastic flash and resin bleed is typically removed by blasting the leads with a mild abrasive such as, for example, ground apricot pits.
- spot plate part of the leadframe with a noble metal, i.e., gold, silver, platinum, palladium, iridium or high alloys thereof.
- a noble metal i.e., gold, silver, platinum, palladium, iridium or high alloys thereof.
- Silver is particularly useful because of the ease with which metallurgical bonds may be formed thereto and its moderate cost.
- the spot plating covers the ends of the leads where wire bonds or tab bonds from the die are attached sometimes the die flag as well, and is usually intended to be confined to an area within the boundary of the plastic body after encapsulation. This is shown in FIG. 1 where the lightly stippled region represents the desired spot plating area and the dashed outline represents the intended location of the plastic encapsulation.
- FIG. 4 shows a partial cut-away view, much enlarged, along an inter-lead space through the leadframe of FIG. 3.
- the lightly stippled region in FIG. 4 shows where excess plating material, as for example silver, has crept outward along the sides of the lead during the plating process and is now exposed after encapsulation, trim and plastic deflash.
- Excess silver plating material is known in the art as "silver flash” or "silver bleed”.
- This excess silver for example, is often in the range of 0.1-8 micrometers thick, typically 1-3 micrometers thick.
- This excess silver or other plating metal may arise from what is known in the art as “immersion” metal, which is typically 0.1-2 micrometers thick, and “bleed” metal, which is typically 5-6 micrometers thick, or a combination thereof.
- This invention is concerned, among other things, with removing such excess plating metal regardless of origin and the words "metal flash” or “plating flash” are intended to include “immersion”, "bleed” and other forms of excess plating metal.
- plastic deflash process can cause minute quantities of the blasting abrasive to become embedded in the leadframe, as illustrated in FIGS. 3. and 4. This is especially troublesome with relatively soft metals such as for example OFHC copper and Olin Type 194 copper.
- plastic deflash may be incomplete and regions of plastic molding resin from the encapsulation may remain on the leads. If these regions are very thin they may be very difficult to detect with the unaided eye.
- stains various oxides or other dielectrics or resistive materials can form on the leadframe during manufacturing. These foreign materials are generally referred to in the art as “stains” because they frequently have a colored appearance. As used herein the words “stain” or “stains” are intended to include all such oxides, dielectrics, scales or other foreign materials that form on the leadframe during manufacture. Such stains are most frequently encountered when the leadframe is heated to several hundred degrees Celsius, as for example during bonding and encapsulation. Copper containing leadframes are particularly susceptible to such problems.
- an object of the present invention to provide an improved method for manufacturing electronic devices including removing excess plating flash from the leads. It is a further object to provide an improved method including removing embedded blasting material from the leads. It is a still further object of the present invention to provide an improved method including removing stains from the leads. It is a yet further object of the present invention to provide an improved method including removing residual encapsulation resin from the leads. It is a still further object of the present invention to provide an improved method that accomplishes combinations of the above.
- a cleaning process comprising, in a first embodiment, providing an electronic device having leads of a first metal, an exposed plated region of a second metal, and electrolytically treating the leads in a cleaning solution comprising lactic acid and a hydroxide, wherein the hydroxide conveniently is a hydroxide of a metal from columns 1A or 2A of the periodic table, and conveniently potassium or sodium hydroxide or a combination thereof. It is desirable that the leads be at least anodically biased (leads positive) in the solution. After the electrolytic treatment the leads are rinsed to remove the cleaning solution. Where anodic cleaning alone is used, the pH of the solution is desirably adjusted to be in the range 1.4-2 by addition of an inorganic acid.
- the leads are first biased cathodically (leads negative) in a hydroxide-water solution with or without the lactic acid, rinsed and then biased anodically (leads positive) in the cleaning solution comprising water, lactic acid and a hydroxide. It is further desirable that the cathodic and anodic treatment times be approximately in the proportion 1:1 to 1:2, respectively, but this is not essential. While the cathodic treatment is conveniently performed in a hydroxide-water solution (e.g., 30-60 gms of KOH/liter) without lactic acid, the lactic acid-hydroxide solution used for the anodic treatment may also be used for the cathodic treatment.
- the lactic acid-hydroxide cleaning solution conveniently comprises about 0.1 to 0.3 liters of 88% lactic acid and about 0.05 to 0.3 Kgms of KOH plus sufficient water to make one liter of cleaning solution.
- Inorganic acid e.g., sulfuric
- the lower end of the pH range e.g., 1.4-2
- the higher end of the pH range e.g., 4-7) is used when cathodic-anodic cleaning is used.
- a typical mixture useful for cleaning leadframes of, for example copper, copper alloys or copper plated metal comprises proportions of about 30 liters lactic acid and about 17 Kgms of KOH with sufficient water to make 100 liters of solution and gives a pH of 4-6. While the solution is described in terms of being made from lactic acid and KOH or other alkali, those of skill in the art will understand that potassium lactate (or other alkali lactate) may also be used. For example, 10-30% by volume of 60% concentration potassium lactate in water is also suitable. This mixture ordinarily has a Ph of about 5-6.
- Solution temperature during cleaning are usefully in the range of about 60°-80° C. with about 70° C. being preferred for the cathodic hydroxide-water cleaning and about 40°-60° C. with about 50°-55° C. being preferred for the cathodic or anodic lactate-water cleaning. It is desirable to agitate the solution during treatment but this is not essential since only very short immersion times are generally needed, e.g., usually less than about 100-200 seconds and typically about 10-25 seconds with the preferred concentration and temperature described above. A DC voltage of 2 to 15 volts is useful with about 5 to 11 volts being convenient and about 9-10 volts being preferred.
- the parts to be cleaned may be in strip form, as for example ladder leadframe strips, or may be singulated. i.e.,individual devices or metal pieces.
- the parts are clamped to a metal rack or placed on a metal belt or in a basket or barrel which is connected to the negative pole of the power supply for cathodic treatment and/or to the positive pole of the power supply for anodic treatment.
- the parts are immersed in the above described solutions and electrolytically cleaned. Where both cathodic and anodic treatments are used, an intermediate rinse is desirable. After electrolytic cleaning the parts are rinsed and then, optionally, acid dipped and plated, or dried.
- the above described cleaning process rapidly removes residual stains, removes metal flash, removes embedded blasting material and removes residual plastic flash or resin bleed.
- silver flash is removed, typically, at 2-3 times the rate of attack on the copper, copper alloy or copper coated leads.
- the mild lead etching facilitates loosening embedded blasting material and residual resin.
- the finished leads have a bright, polished, stain-free appearance and are free of discoloration (e.g., heavy oxides or other contact inhibiting materials), residual plating metal, residual resin, and residual blasting media.
- a very thin surface oxide, invisible to the unaided eye, may be present after the anodic treatment which is easily removed by a brief (e.g., 2-30 seconds) acid dip.
- the plastic encapsulation around the device element is substantially unaffected by the above-described electrolytic cleaning process.
- the invented cleaning process is particularly well suited to practical application in electronic assembly because of its effectiveness, comparatively low cost, and freedom from toxic and/or corrosive materials such as the cyanide compounds and/or the fluoboric acids used in the prior art.
- FIG. 1 is a simplified top view of a portion of a spot-plated leadframe according to the prior art
- FIG. 2 is a top view of the leadframe portion of FIG. 1, after plastic encapsulation but before trim and plastic deflash;
- FIG. 3 is a top view of a device excised from the leadframe portion of FIG. 2, after lead trim and plastic deflash;
- FIG. 4 is a much enlarged partial cut-away side view of one lead of the device of FIG. 3;
- FIG. 5 is a flow chart illustrating various embodiments of the present invention.
- FIG. 1 is a simplified top view of portion 10 of a spot-plated leadframe according to the prior art.
- Leadframe portion 10 comprises side-rails 12 with alignment holes 14, leads 16, dam bars 18, and die flag 20 supported by crossbar 22.
- Inner lead portions 24 lie adjacent to die flag 20 within the boundary of the intended plastic encapsulation indicated by dashed line 26.
- Die flag 20 and inner lead portions 24 are spot plated in region 28 (indicated by the light stippling in FIG. 1) to facilitate die bonding and wire bonding or equivalent.
- Copper, copper alloys (e.g., beryllium copper), Alloy 42, and Kovar tm are examples of well known leadframe materials.
- Noble metals, aluminum and nickel are well known materials that are commonly plated or coated onto leadframes to facilitate bonding.
- the present invention is particularly well suited for use in connection with leadframes or leads that have been spot plated or coated with noble metals, but is also useful with other combinations of materials and other configurations.
- plate As used herein, the words “plate”, “plated” or “plating” are intended to refer to all methods of coating one metal on another, including but not limited to, chemical deposition, electrochemical deposition, vacuum deposition, vapor deposition, sputtering and spraying.
- FIG. 2 is a top view of leadframe portion 10 of FIG. 1, after plastic encapsulation but before lead trim and plastic deflash.
- Plastic encapsulation 30 has been provided at the location previously indicated by dashed line 26 in FIG. 1.
- Plastic encapsulation methods are well known in the art.
- the encapsulation mold conventionally closes on side-rails 12 and dam bars 18, and excess plastic indicated by stippled region 32 forms in inter-lead spaces 34, creating what is referred to herein as "inter-lead plastic".
- excess plastic can also form on the upper (and lower) surfaces of leads 16 and dam bars 18 as indicated by stippled regions 36, creating what is referred to herein as "over-lead plastic" or "plastic flash".
- trim operation conventionally removes inter-lead plastic 32, but may not remove over-lead plastic flash 36. Accordingly, it is customary in the prior art to subject the parts to a further operation, either before or after trim, to attempt to remove the over-lead plastic flash. This is typically accomplished by blasting the parts with a mild abrasive such as for example, ground apricot pits. Other mild abrasive materials may also be used. However, some plastic encapsulation resin may still remain. If it is sufficiently thin, it may be very difficult to see with the unaided eye.
- FIG. 3 The results of the foregoing treatments are shown in FIG. 3 wherein the device has been excised from side-rails 12 and dam bars 18. Inter-lead plastic 32 and over-lead plastic flash 36 have been substantially removed. Small particles 38 of the blasting material may adhere to leads 16, as indicated by the small dots shown on leads 16 in FIG. 3 and the larger dots 38 in the magnified partial cut-away side view of a lead shown in FIG. 4. Stain regions 39 are also shown on leads 16.
- portion 40 of lead 16 is shown enlarged in cross-section and partially cut-away. Embedded blasting grain 38 and stain region 39 are visible. Residual plastic flash is not shown in FIG. 4.
- Lightly stippled region 42 on lead 16 in FIG. 4 illustrates the presence of excess spot plating material (metal flash or bleed) on lead 16 that migrated along side 44 of lead 16 laterally outside intended spot-plated region 28 (see FIGS. 1, 3 and 4). Since plating bleed region 42 is exposed outside encapsulation 30, it can cause the growth of metal whiskers during solder coating of leads 16 or during solder re-flow or during extended high temperature operation of the finished device. Metal whisker growth is a known failure mechanism which is to be avoided.
- the conditions illustrated in FIG. 4 show a combination of problems encountered during manufacture of electronic devices that must be dealt with in order to obtain high quality parts that function with high reliability in their intended application.
- FIG. 5 is a flow diagram of a process suitable for cleaning metal parts according to the present invention. While the process is described as for plastic encapsulated electronic devices, those of skill in the art will appreciate that the invented process is useful for cleaning a wide variety of electronic devices and other metal parts, with or without plastic encapsulation and which may or may not have received all of the steps illustrated in "prepare parts" portion 50 of FIG. 5. Accordingly, the following description in terms of electronic devices is intended for convenience of explanation and not to be limiting.
- dashed outline 50 illustrate various prior art steps 52-60 associated with electronic devices, particularly electronic devices mounted on leadframes or the like and adapted to be encapsulated in plastic, although that is not essential. Some or all of steps 50 are usually performed on electronic devices before the invented cleaning steps illustrated within dashed outline 70.
- a leadframe is locally plated with, for example silver. It may then progress directly to cleaning steps 70 via path 53 or may advance to "assemble” step 54 wherein an electronic die is mounted on the leadframe and various wirebonds or the like attached thereto.
- the leadframe with the die thereon may proceed directly to cleaning steps 70 via path 55 or advance to "encapsulate” step 56 wherein a plastic or other encapsulation is provided around the die and wires.
- the encapsulated die and leadframe may proceed directly to steps 70 via path 57 or advance to "trim” operation 58 wherein the dam bars and side-rails, if any, are sheared away.
- the trimmed device and leads may then proceed directly to cleaning steps 70 via path 59 or advance to plastic "deflash” operation 60 from whence it passes to cleaning operation 70 via path 61.
- the invented cleaning process is illustrated in several embodiments within dashed outline 70 which is intended to refer collectively to the invented electrolytic cleaning process steps.
- the parts incoming from steps 50 may proceed via 71 to anodic cleaning step 72 and thence via 73 to rinsing step 74.
- the details of the anodic cleaning step are described later.
- Steps 71-74 are particularly useful where the parts have substantial amounts of metal plating flash but little embedded blasting material and resin flash, and no heavy stains.
- cathodic-anodic cleaning process illustrated in steps 81-88 is preferred.
- the parts proceed via 81 to cathodic cleaning step 82, then via 83 to first rinse step 84, then via 85 to anodic cleaning step 86, and then via 87 to second rinse step 88.
- Cathodic step 82 is particularly effective in loosening or partially removing embedded blasting media, stains and residual plastic flash and resin bled.
- Anodic cleaning step 86 is particularly effective in removing metal plating flash with minimum etching of the lead metal and in completing removal of embedded blasting media, resin flash and stains loosened in the cathodic step. The combination of the steps provides very effective cleaning.
- the metal parts or leads that have passed through the above-described cleaning steps have a bright shiny appearance with no evidence of embedded blasting media, residual plastic flash and resin bleed, metal plating flash, scale or stains. Any oxide present on the leads is so thin as to be substantially invisible to the unaided eye.
- the parts are not to be plated or solder coated, they proceed via 89 to drying step 90, after which they may be stored until use.
- they desirably proceed via 91 to acid dip step 92 and via 93 to plating step 94.
- Acid dip 92 is optional but desirable and is included, for example with copper leads, to remove any thin oxide that may form during anodic cleaning step 72 or 86 or during subsequent storage.
- Means and methods for plating or solder coating leads or electronic devices or other parts are well known in the art.
- a solution comprising lactic acid and metal hydroxide in water is particularly effective cleaning material for removing stains, embedded blasting media, plating bleed or flash and residual plastic resin flash.
- Hydroxides of metals from columns 1A and 2A of the periodic table are suitable, with KOH, NaOH and mixtures thereof being particularly convenient for parts having noble metal spot plated leads.
- a lactic acid +KOH + water solution is preferred.
- the periodic table referred to is that contained in the Handbook of Chemistry and Physics, 61st edition, CRC Press, Boca Raton, Fla., inside front cover. It is desirable that the process be carried out at a slightly elevated temperature.
- the cleaning solution for anodic step 72 conveniently comprises ingredients in proportion of about 10 to 30 liters of 88% lactic acid (e.g. food grade; specific gravity 1.2) and about 5 to 30 Kgms of KOH or NaOH or a mixture thereof (e.g. electronic grade) plus sufficient water to make about 100 liter of cleaning solution, with the proportions adjusted to give a pH in the range of about 4-7, preferably 5-6.
- a typical solution useful for cleaning electronic copper leadframes comprises about 30 liters lactic acid and about 17 Kgms of KOH with sufficient water to make about 100 liters of solution or equivalent in potassium lactate in water.
- the above-described anodic cleaning solution is particularly effective in removing metal plating flash without significant lead etching. For example, it removes silver flash on copper at 2-3 times the rate at which it etches the underlying copper leads.
- the cleaning solution is also effective for removing light stains, residual blasting media, plastic flash and resin bleed.
- Useful anodic cleaning times with the lactic acid+KOH sulfuric acid+water cleaning solution are about 10 to 100 seconds with 20 to 30 seconds being convenient and about 22 seconds being typical. Copper leadframes treated in this manner are clean, bright and shiny with no evidence of stain, residual plastic flash or resin bleed, blasting media or metal flash. Any surface oxide remaining or formed thereon is substantially invisible to the unaided eye.
- cathodic-anodic cleaning is desirable, i.e., steps 81-88.
- the anodic cleaning solution described above for anodic cleaning step 72 is useful for anodic cleaning step 86 and may also be used for cathodic cleaning step 82.
- less expensive solutions are useful for cathodic step 82 and are preferred.
- a preferred cathodic cleaning solution for step 82 comprises about 3 to 6 Kgms of KOH or NaOH or a mixture thereof (e.g., electronic grade) into water per 100 liters of cathodic solution, with about 4.5 Kgms per 100 liters of solution being typical. Less expensive grades may be used Provided that the impurities therein do not adversely affect the parts being cleaned.
- the anodic and cathodic cleaning solutions are placed in conventional electrolytic cleaning tanks of several hundred liters capacity and held at 60°-80° C. with about 70° C. being preferred for the cathodic (hydroxide-water) tank and about 40°-60° C. being useful and about 50° C. being preferred for the anodic (lactate-water) tank.
- Plastic (e.g., polypropylene) tanks are preferred and larger or smaller capacities may be used depending on the size and shape of the parts being cleaned and the desired throughput. The lower the temperature the lower the reaction rate, and the higher the temperature the greater the solution decomposition rate. Thus, excessively high or low temperatures are not as effective. It is desirable to circulate the solution in the tanks although this is not essential because of the relatively short immersion times typically used.
- the parts to be cleaned according to steps 70 are conveniently clamped on a stainless steel rack or placed on a stainless steel belt, tray or barrel and then immersed in the anodic cleaning solution according to steps 71-74, or the cathodic and anodic cleaning solutions according to steps 81-88. Electrical contact to the parts is through this metal rack, belt, tray or barrel. Counter electrodes of stainless steel (anodic and cathodic bath) or copper (anodic bath) are provided in the solution, with stainless steel being preferred.
- the parts holder and counter electrodes are connected to one or more power supplies capable of providing at least about 75 amps at about 2-15 volts, typically 5-50 amps at 9-10 volts.
- the racks, power supplies and counter electrodes are conventional
- Anodic treatment times for step 72 are conveniently in the range of 2-200 seconds with 5-100 being convenient and 20-25 seconds being typical.
- Cathodic treatment times for step 82 are conveniently in the range of 1-100 seconds with 2-50 second being convenient and 10-15 seconds being typical.
- Anodic treatment times for step 86 are conveniently in the range of 2-200 seconds with 5-100 being convenient and 20-25 seconds being typical.
- the relative cathodic and anodic treatment times are desirably in the ratio of about 1:1 to 1:2 (cathodic time:anodic time).
- cathodic-anodic treatment may be carried out in a single bath, as for example when the same cleaning solution is being used for both cathodic and anodic cleaning cycles, it is more desirable to use separate tanks with a rinse in between. In this way the conditions in each cleaning tank may be optimized for that portion of the cleaning cycle.
- rinse step 74, 88 It is desirable to provide rinse step 74, 88 after anodic cleaning steps 72, 86, respectively. It is desirable but not essential to provide rinse step 84 between cathodic cleaning step 82 and anodic cleaning step 86 so as to avoid cross-contamination of the plating solutions in steps 82 and 86. A water rinse sufficient to substantially remove residual cleaning solution is sufficient in both cases.
- Acid dip step 92 is intended to remove any residual oxide formed during anodic step 72, 86 or otherwise.
- a solution of 10-40% methylsulfonic acid in water is useful with 20-30% being preferred.
- Acid dip bath temperature is usefully about 35°-70° C. with about 45°-60° C. being conveniently and about 50°-55° C. being preferred.
- Immersion times of about 2-30 seconds are useful with about 5-10 seconds being convenient and about 7 seconds being preferred.
- Other acid dips well known in the art can also be used provided they do not adversely affect the parts being treated.
- Plating step 94 is conventional and typically comprises solder plating or solder coating using means well known in the art.
- Standard plastic encapsulated SOT-23 ladder leadframes composed of an Alloy 42 (42% Ni, balance Fe) base completely covered with about 4.4 micrometers of OFHC copper plate, and with silver spot plating and substantial silver flash and bleed, scale, blasting media, plastic flash and resin bleed were clamped on a stainless steel belt and first immersed in a first cleaning solution comprising about 4.5 Kgms of KOH per 100 liters of DI water, in a plastic tank at about 70° C. and subjected to a cathodic cleaning cycle at 9 volts and 50-60 amperes for about 10 seconds.
- a first cleaning solution comprising about 4.5 Kgms of KOH per 100 liters of DI water
- the parts were withdrawn from the first cleaning solution, rinsed and then placed in a second cleaning solution comprising about 30% by volume potassium lactate and 5% by volume lactic acid and the balance DI water, and having a pH of 4-5, and subjected to anodic cleaning at 9 volts and 30-70 amperes for about 12 seconds.
- the parts were then withdrawn from the second cleaning solution and rinsed.
- Each rinse step was performed under a DI water spray for about 5 seconds to remove substantially all of the preceding solution.
- the leads were inspected and found to be clean, bright, shiny and free from any scale, plastic flash, resin bleed, blasting compound and residual metal flash or bleed.
- Standard plastic encapsulated 14/16 lead IC ladder leadframes of Olin 194 copper with silver spot plating and substantial silver plating bleed and some scale, plastic flash and resin bleed were clamped to a stainless steel belt and immersed in a cleaning solution comprising 10% potassium lactate, about 2% sulfuric acid (98%) and the balance DI water at about 52° ⁇ 2° C. and under anodic potential for about 22 seconds.
- the pH of the solution was about 1.48-1.50.
- the parts were then removed, rinsed as described above and inspected. The leads were found to be clean, bright, shiny and without evidence of any plating bleed, scale, plastic flash or resin bleed.
- the parts cleaned as described in Examples A and B above were acid dipped in a methylsulfonic acid solution (20-30% by volume of 70% acid in water) at 54° ⁇ 3° C. for about 7 seconds, then rinsed (as above) and the leads solder plated with about 13 ⁇ 1.3 micrometers of Sn:Pb (80:20) solder using standard techniques.
- the finished solder plated parts were aged in air at 175° ⁇ 5° C. for five hours and in steam (95° C.) for 32 hours and then tested for solderability and inspected for de-wetting, non-wetting, pin holes and bridging using standard techniques. All parts passed indicating substantially complete removal of all solder inhibiting surface layers and removal of plating flash (and bleed) that otherwise cause solder coverage and/or shorts rejects.
- the invented method provides a particularly effective way of cleaning leads or electrodes on electronic devices, particularly semiconductor devices, in that a unified cleaning treatment removes stains, removes embedded blasting media used for plastic deflash, and removes excess plating metal, removes residual plastic flash and resin bleed.
- the cleaning treatment provides finished leads that are clean, brightly polished and free from surface defects, visible oxides, or contaminants that otherwise adversely affect manufacturing yield, cost, device performance and reliability. Further, removal of all these different types of undesirable contaminates is accomplished using raw materials (e.g., lactic acid and/or KOH or NaOH, and water, or sodium or potassium lactate and water) that are particularly inexpensive compared to prior art cleaning materials used for similar tasks. Further, the health and safety hazards associated with some prior art cleaning materials are greatly reduced.
- a particular feature and advantage of the invented method is that, not only does it clean scale, plastic and blasting residue from electronic device leads, but it selectively etches excess noble metal plating faster than the underlying leads.
- the leads are not solid but consist of a base metal (e.g., Alloy 42) covered with a comparatively thin surface layer of another metal (e.g., copper) which has been spot plated with a still further metal (e.g., silver).
- a base metal e.g., Alloy 42
- another metal e.g., copper
- a still further metal e.g., silver
- the invented process has been particularly described for removing, among other things, silver from copper containing or copper plated leads, those of skill in the art will appreciate based on the description herein that the invented process may be used with other combinations of materials of interest in the electronics art and elsewhere, as for example but not limited to, removing other noble metals and alloys thereof from leads composed of a wide variety of metals and metal alloys well known in the art, including but not limited to those leadframe materials listed earlier in this description. Further, while the process has been illustrated in terms of particular solution concentrations, volumes and temperatures, agitation, polarities, electrodes and other circumstances, those of skill in the art will understand based on the description herein how to utilize without undue experimentation other combinations of these conditions to achieve their particular ends.
- cathodic-anodic cleaning steps are described in terms of a single cathodic clean followed by a single anodic clean, the similar effects may be obtained by using multiple cathodic-anodic cycles. Multiple polarity reversal of a DC potential or by using an AC cathodic-anodic cycles may be provided by sequential potential. It is desirable that the multiple cycles finish with an anodic cycle.
- cathodic-anodic cycles While multiple or combined (single-bath) cathodic-anodic cycles may be used, it is preferable to perform the cathodic and anodic cycles in separate tanks, or at least with separate solutions, so that each may be separately optimized and undesirable plating of dissolved metals or contaminants onto the leads minimized. Under these circumstances, a single cathodic and single anodic cycle is less complicated.
- cleaning solution is described in terms of being made from lactic acid and KOH or NaOH, those of skill in the art will understand that potassium of sodium lactate (or other column 1A or 2A lactates) may also be used, so long as the solution has the equivalent amount of lactate and hydroxide and inorganic acid is adjusted to have the desired pH, e.g., 1.4-7, and that other carboxylic acids or compounds may be used instead of lactic acid or lactates, although the latter are preferred and are believed to offer better performance for the particular combination of problems encountered with spot plated electronic leadframes.
- suitable alternative carboxylic acids to be mixed with metal hydroxides are acetic, tartaric or citric acids or salts such as potassium or sodium acetate, tartrate or citrate.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Electroplating Methods And Accessories (AREA)
Abstract
Description
Claims (23)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/710,853 USRE34227E (en) | 1989-11-27 | 1991-06-06 | Non-cyanide electrode cleaning process |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/441,595 US4968397A (en) | 1989-11-27 | 1989-11-27 | Non-cyanide electrode cleaning process |
US07/710,853 USRE34227E (en) | 1989-11-27 | 1991-06-06 | Non-cyanide electrode cleaning process |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US07/441,595 Reissue US4968397A (en) | 1989-11-27 | 1989-11-27 | Non-cyanide electrode cleaning process |
Publications (1)
Publication Number | Publication Date |
---|---|
USRE34227E true USRE34227E (en) | 1993-04-20 |
Family
ID=27032871
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US07/710,853 Expired - Lifetime USRE34227E (en) | 1989-11-27 | 1991-06-06 | Non-cyanide electrode cleaning process |
Country Status (1)
Country | Link |
---|---|
US (1) | USRE34227E (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5561320A (en) * | 1992-06-04 | 1996-10-01 | Texas Instruments Incorporated | Silver spot/palladium plate lead frame finish |
US5569625A (en) * | 1992-01-08 | 1996-10-29 | Fujitsu Limited | Process for manufacturing a plural stacked leadframe semiconductor device |
US6203691B1 (en) | 1998-09-18 | 2001-03-20 | Hoffman Industries International, Ltd. | Electrolytic cleaning of conductive bodies |
US20040004274A1 (en) * | 1997-02-25 | 2004-01-08 | Wensel Richard W. | Semiconductor die with attached heat sink and transfer mold |
US20050023583A1 (en) * | 2001-06-11 | 2005-02-03 | Bolken Todd O. | Multi media card formed by transfer molding |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3912603A (en) * | 1973-12-20 | 1975-10-14 | Hoechst Ag | Electrolytic bath for the removal of metals |
-
1991
- 1991-06-06 US US07/710,853 patent/USRE34227E/en not_active Expired - Lifetime
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3912603A (en) * | 1973-12-20 | 1975-10-14 | Hoechst Ag | Electrolytic bath for the removal of metals |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5569625A (en) * | 1992-01-08 | 1996-10-29 | Fujitsu Limited | Process for manufacturing a plural stacked leadframe semiconductor device |
US5561320A (en) * | 1992-06-04 | 1996-10-01 | Texas Instruments Incorporated | Silver spot/palladium plate lead frame finish |
US20040004274A1 (en) * | 1997-02-25 | 2004-01-08 | Wensel Richard W. | Semiconductor die with attached heat sink and transfer mold |
US20040033644A1 (en) * | 1997-02-25 | 2004-02-19 | Wensel Richard W. | Methods for transfer molding encapsulation of a semiconductor die with attached heat sink |
US7061082B2 (en) | 1997-02-25 | 2006-06-13 | Micron Technology, Inc. | Semiconductor die with attached heat sink and transfer mold |
US6203691B1 (en) | 1998-09-18 | 2001-03-20 | Hoffman Industries International, Ltd. | Electrolytic cleaning of conductive bodies |
US20050023583A1 (en) * | 2001-06-11 | 2005-02-03 | Bolken Todd O. | Multi media card formed by transfer molding |
US20050022378A1 (en) * | 2001-06-11 | 2005-02-03 | Bolken Todd O. | Apparatus used to package multimedia card by transfer molding |
US20060157838A1 (en) * | 2001-06-11 | 2006-07-20 | Bolken Todd O | Multimedia card and transfer molding method |
US7220615B2 (en) | 2001-06-11 | 2007-05-22 | Micron Technology, Inc. | Alternative method used to package multimedia card by transfer molding |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4968397A (en) | Non-cyanide electrode cleaning process | |
US5896869A (en) | Semiconductor package having etched-back silver-copper braze | |
JP2835287B2 (en) | Plating method for nickel titanium alloy members | |
US2814589A (en) | Method of plating silicon | |
USRE34227E (en) | Non-cyanide electrode cleaning process | |
EP0571015B1 (en) | Electrolytic cleaning method for metal surfaces of electronic components | |
JPH09148508A (en) | Lead frame for semiconductor device and plastic molded type semiconductor device using the same | |
EP0127857B1 (en) | Solderable stainless steel article and method for making same | |
US4589962A (en) | Solder plating process and semiconductor product | |
EP0132596A2 (en) | Solderable nickel-iron alloy article and method for making same | |
US6203690B1 (en) | Process of reworking pin grid array chip carriers | |
EP0375179B1 (en) | Copper plating process for difficult to plate metals | |
US20040231978A1 (en) | Electrode attachment to anode assembly | |
JP2551274B2 (en) | Surface treatment method for aluminum materials | |
JP3403299B2 (en) | Plating method of lead frame for semiconductor device | |
JP2630096B2 (en) | Surface treatment method for thick film conductor | |
JPH0421000B2 (en) | ||
JPH02182886A (en) | Method for removing silver plating | |
JPH02281749A (en) | Manufacture of lead frame | |
RU2194597C1 (en) | Method for preparing articles with silver coating for soldering | |
JPS585275B2 (en) | Method for forming an electroplated base on alloy articles | |
EP1427872A1 (en) | Electrode attachment to anode assembly | |
JP2851168B2 (en) | Manufacturing method of tin / tin alloy plating material | |
JPH01171257A (en) | Manufacture of resin-sealed type semiconductor device | |
JPS63132418A (en) | Treatment with aluminum alloy rod member |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
FPAY | Fee payment |
Year of fee payment: 4 |
|
FPAY | Fee payment |
Year of fee payment: 8 |
|
FEPP | Fee payment procedure |
Free format text: PAYOR NUMBER ASSIGNED (ORIGINAL EVENT CODE: ASPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY |
|
FPAY | Fee payment |
Year of fee payment: 12 |
|
AS | Assignment |
Owner name: FREESCALE SEMICONDUCTOR, INC.,TEXAS Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:MOTOROLA, INC.;REEL/FRAME:015698/0657 Effective date: 20040404 Owner name: FREESCALE SEMICONDUCTOR, INC., TEXAS Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:MOTOROLA, INC.;REEL/FRAME:015698/0657 Effective date: 20040404 |
|
AS | Assignment |
Owner name: CITIBANK, N.A. AS COLLATERAL AGENT,NEW YORK Free format text: SECURITY AGREEMENT;ASSIGNORS:FREESCALE SEMICONDUCTOR, INC.;FREESCALE ACQUISITION CORPORATION;FREESCALE ACQUISITION HOLDINGS CORP.;AND OTHERS;REEL/FRAME:018855/0129 Effective date: 20061201 Owner name: CITIBANK, N.A. AS COLLATERAL AGENT, NEW YORK Free format text: SECURITY AGREEMENT;ASSIGNORS:FREESCALE SEMICONDUCTOR, INC.;FREESCALE ACQUISITION CORPORATION;FREESCALE ACQUISITION HOLDINGS CORP.;AND OTHERS;REEL/FRAME:018855/0129D Effective date: 20061201 Owner name: CITIBANK, N.A. AS COLLATERAL AGENT, NEW YORK Free format text: SECURITY AGREEMENT;ASSIGNORS:FREESCALE SEMICONDUCTOR, INC.;FREESCALE ACQUISITION CORPORATION;FREESCALE ACQUISITION HOLDINGS CORP.;AND OTHERS;REEL/FRAME:018855/0129 Effective date: 20061201 |
|
AS | Assignment |
Owner name: FREESCALE SEMICONDUCTOR, INC., TEXAS Free format text: PATENT RELEASE;ASSIGNOR:CITIBANK, N.A., AS COLLATERAL AGENT;REEL/FRAME:037354/0225 Effective date: 20151207 |