USH147H - High resistivity group III-V compounds by helium bombardment - Google Patents

High resistivity group III-V compounds by helium bombardment Download PDF

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Publication number
USH147H
USH147H US06/499,775 US49977583A USH147H US H147 H USH147 H US H147H US 49977583 A US49977583 A US 49977583A US H147 H USH147 H US H147H
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US
United States
Prior art keywords
helium
ions
zone
bombarded
regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US06/499,775
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English (en)
Inventor
Leonard C. Feldman
Marlin W. Focht
Albert T. Macrander
Bertram Schwartz
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Nokia Bell Labs USA
AT&T Corp
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AT&T Bell Laboratories Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Priority to US06/499,775 priority Critical patent/USH147H/en
Assigned to BELL TELEPHONE LABORATORES, INCORPORATED reassignment BELL TELEPHONE LABORATORES, INCORPORATED ASSIGNMENT OF ASSIGNORS INTEREST. Assignors: FELDMAN, LEONARD C., FOCHT, MARLIN W., MACRANDER, ALBERT T., SCHWARTZ, BERTRAM
Priority to JP59112166A priority patent/JPS605538A/ja
Application granted granted Critical
Publication of USH147H publication Critical patent/USH147H/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/206—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group III-V semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/208—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically inactive species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

Definitions

  • This invention relates to semiconductor devices and, more particularly, to the fabrication of high resistivity zones in such devices by ion bombardment.
  • Ion bombardment has been utilized to produce highly resistive, typically semi-insulating, zones of semiconductor material in an otherwise low resistivity semiconductor body. These zones serve a variety of functions: device isolation, p-n junction passivation and current confinement.
  • the bombardment damage that results from the impingement of medium energy protons (i.e., 50-300 keV) on the unprotected areas yields semi-insulating material (>10 9 ohm-cm) to a depth of 2-3 ⁇ m, J. C. Dyment et al, Journal of Applied Physics, vol. 44, p. 207 (1973).
  • high resistivity is created in Group III-V compound semiconductors by bombardment with helium ions, either 4 He (helium-4) or 3 He (helium-3) ions.
  • helium ions either 4 He (helium-4) or 3 He (helium-3) ions.
  • Suitable masking enables high resistivity zones to be formed for device applications.
  • our invention is a stripe geometry laser in which the current-constraining regions are helium-bombarded zones, or it is a photodiode in which helium-bombarded zones surround the active region and penetrate the p-n junction to provide passivation.
  • This type of bombardment has the advantages of reproducibility as well as the absence of type conversion and hazardous neutron side effects; hence, it is well suited to the fabrication of InP/InGaAsP devices.
  • FIG. 1, 4 and 5 are not drawn to scale in the interest of simplicity.
  • FIG. 1 is a schematic showing how a typical Group III-V compound sample is masked and helium bombarded in accordance with one aspect of our invention
  • FIG. 2 is a plot of a Monte Carlo simulation of helium bombardment into InP showing the mean projected range (R p ) and the straggling ( ⁇ R p );
  • FIG. 3 is a graph of average resistivity (ohm-cm) of the bombarded region as a function of ion dose. Resistance measurements were made on p-type InP (curves III, IV and V) and on n-type InP (curves I and II) which were bombarded at a constant, single-energy of 200, 250 or 270 KeV wtih helium-3 or helium-4 over a dose range of 1 ⁇ 10 11 to 1 ⁇ 10 16 ions/cm 2 . The carrier concentrations and bombardment species varied with the samples:
  • Curve I helium-3, n-InP at 1 ⁇ 10 18 cm -3
  • Curve II helium-4, n-InP at 1 ⁇ 10 18 cm -3
  • Curve III helium-3, p-InP at 9 ⁇ 10 17 cm -3
  • Curve IV helium-3, p-InP at 6 ⁇ 10 18 cm -3
  • Curve V helium-4, p-InP at 6 ⁇ 10 18 cm -3 ;
  • FIG. 4 is a schematic of a stripe geometry heterostructure laser in accordance with another aspect of our invention.
  • FIg. 5 is a schematic of a photodiode or LED structure in accordance with yet another aspect of our invention.
  • a Group III-V compound single crystal semiconductor body 10 which may include one or more epitaxial layers of Group III-V compounds, typically those which can be readily lattice-matched to one another; e.g., InP, InGaAsP and InGaAs; or GaAs and AlGaAs.
  • suitable masks 14 are formed by techniques well-known in the art (e.g., photolithography). The composition and thickness of the masks are chosen to block the penetration of ions into masked portions of body 10.
  • the ion beam 16 comprises either helium-3 ions or helium-4 ions. When these ions impinge upon the unmasked portions of surface 12, they penetrate into body 10 to a depth which depends upon the ion energy. The ions damage the bady 10 and produce high resistivity zones 18.
  • Peak resistivities are about 10 9 ohm-cm for p-InP and are about 10 3 ohm-cm for n-InP.
  • ion energies of about 150-300 keV penetration depths of about 0.9-1.7 ⁇ m were realized.
  • High resistivities were also produced by helium bombardment of other Group III-V compounds; namely, GaP, GaSb, GaAs, and InGaAs.
  • This example describes the helium bombardment of p-type and n-type samples of InP.
  • the p-type InP materials were grown by liquid encapsulated Czochralski (LEC) and were Zn-doped with about 9 ⁇ 10 17 and 6 ⁇ 10 18 cm -3 initial hole concentrations.
  • the n-type material was grown by LEC techniques and had a carrier concentration of 1 ⁇ 10 18 cm -3 . All wafers were polished with a brominemethanol solution to a final thickness of 250 ⁇ m.
  • the p-type samples were prepared by evaporating a 2000 Angstrom thick layer 20 of Au and Zn ( ⁇ 12% Zn) on one surface and alloying at 430° C. for 20 seconds. This step was followed by the evaporation of Au and Zn on the opposite surface through a shadow mask resulting in 500 ⁇ m dots (masks 14) and a subsequent alloying at 430° C. for 20 seconds.
  • n-type samples were metallized by vapor deposition on both sides with a 2000 Angstrom layer of pure Au; i.e., first, layer 20 was formed on the full area of the back surface and then masks 14 were formed by a deposition on the opposite surface through a shadow mask, resulting in dots of either 125 or 500 ⁇ m diameter. Since this procedure resulted in low resistance contacts without an alloying step, no heat treatment was subsequently performed.
  • All ion irradiations of the samples were performed at room temperature at a fixed energy through the metal masks 14 at fluences form about 1 ⁇ 10 11 to 1 ⁇ 10 16 ions/cm 2 and a beam current of less than about 20 ⁇ A to reduce thermal effects. Other beam currents are useful.
  • All bombardments of p-type InP were made at 200 keV.
  • Helium-3 was used to bombard samples having either 9 ⁇ 10 17 or 6 ⁇ 10 18 cm -3 hole concentrations
  • helium-4 was used to bombard only the 6 ⁇ 10 18 cm 31 3 material.
  • the bombardments of n-type InP were made at energies of 270 keV with helium-3 and at 250 keV with helium-4.
  • R T is the total measured resistance of the bombarded sample between a dot contact and the full surface contact
  • A is the area of the dot contact
  • W is the width of the compensated region.
  • the width of the compensated region was taken from the Monte Carlo simulation to be the mean projected range R p ). Deep level studies of deuteron ions irradiated into InP indicate that the high damaged region likely extends from the surface to the end of the range. This procedure is a more conservative way to estimate the effective resistivity than to apply the often-used standard deviation; i.e., the straggling. Therefore, Eq. (1) becomes:
  • FIG. 3 shows the measured average resistivity versus the bombardment dose for both helium-3 and helium-4 bombardment into n-type InP (curves I and II) and p-type InP (curves II, III and IV). Bombardments of helium-3 and helium-3 into n-type InP were similar in that both produced average peak resistivities of about 10 3 ohm-cm at a bombardment dose of 10 14 ions/cm 2 .
  • the laser of FIG. 4 is a schematic of a basic double heterostructure which includes opposite conductivity type, wide bandgap, cladding layers (e.g., an n-InP layer 30 and p-InP layer 32) and a thin, narrower bandgap active layer (e.g., an InGaAsP layer 34) between layers 30 and 32 and essentially lattice-matched thereto.
  • cladding layers e.g., an n-InP layer 30 and p-InP layer 32
  • a thin, narrower bandgap active layer e.g., an InGaAsP layer 34
  • These layers are epitaxially grown on a substrate 36 (e.g., n-InP) by techniques well-known in the art (e.g., LPE, MBE, MO-CVD).
  • a typical contact-facilitating layer 38 is formed on top of layer 32.
  • the laser includes laterally separate, high resistivity, helium-bombarded zones 40 which extend from the top surface of layer 38 and into cladding layer 32, preferably to a depth short of the active layer 34.
  • zones 40 form therebetween a narrow, low resistivity channel 42 through which pumping current flows from source 44.
  • stimulated radiation is emitted from the portion of the active layer under channel 42.
  • This radiation emanates typically from parallel cleaved facets (parallel to the plane of the paper) which form an optical resonator.
  • Below threshold however, the same device emits spontaneous radiation and hence functions as an edge-emitting LED.
  • the channel 42 is an elongated parallelepiped which extends perpendicular to the plane of the paper, and the separate zones 40 bound the sides of the channel.
  • the channel would be essentially cylindrical, and the zones 40 would be part of a single, annular, high resistivity zone surrounding the cylindrical channel.
  • our helium bombardment technique may be used to passivate a p-n junction device as shown in FIG. 5.
  • a p-n junction 50 is formed between n-type layer 52 and p-type layer 54.
  • Laterally separate helium-bombarded zones 56 penetrate through the junction 50 and form therebetween device regions 58 which may function, for example, either as surface emitting LEDs or as photodiodes.
  • the structure may serve as an array of devices or may be diced into individual chips (e.g., by cleaving or cutting along planes 60).
  • our invention may also be practiced by helium bombardment of a surface (e.g., a substrate surface) and epitaxial growth of a device structure on the bombarded surface, provided that at the growth temperature the helium damage is not annealed out.
  • a surface e.g., a substrate surface
  • epitaxial growth of a device structure on the bombarded surface provided that at the growth temperature the helium damage is not annealed out.

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  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Light Receiving Elements (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
US06/499,775 1983-05-31 1983-05-31 High resistivity group III-V compounds by helium bombardment Abandoned USH147H (en)

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JP59112166A JPS605538A (ja) 1983-05-31 1984-05-31 半導体デバイスの製作方法

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Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5019886A (en) * 1986-01-21 1991-05-28 Fuji Electric Co., Ltd. Semiconductor-based radiation-detector element
US5126277A (en) * 1988-06-07 1992-06-30 Oki Electric Industry Co., Ltd. Method of manufacturing a semiconductor device having a resistor
US5156979A (en) * 1986-01-21 1992-10-20 Fuji Electric Co., Ltd. Semiconductor-based radiation-detector element
US5707879A (en) * 1997-01-08 1998-01-13 Reinitz; Karl Neutron detector based on semiconductor materials
US6222871B1 (en) 1998-03-30 2001-04-24 Bandwidth9 Vertical optical cavities produced with selective area epitaxy
US6226425B1 (en) 1999-02-24 2001-05-01 Bandwidth9 Flexible optical multiplexer
US6233263B1 (en) 1999-06-04 2001-05-15 Bandwidth9 Monitoring and control assembly for wavelength stabilized optical system
US6275513B1 (en) 1999-06-04 2001-08-14 Bandwidth 9 Hermetically sealed semiconductor laser device
US6366597B1 (en) 1998-04-14 2002-04-02 Bandwidth9 Inc. Lattice-relaxed vertical optical cavities
US6487230B1 (en) 1998-04-14 2002-11-26 Bandwidth 9, Inc Vertical cavity apparatus with tunnel junction
US6487231B1 (en) 1998-04-14 2002-11-26 Bandwidth 9, Inc. Vertical cavity apparatus with tunnel junction
US6493372B1 (en) 1998-04-14 2002-12-10 Bandwidth 9, Inc. Vertical cavity apparatus with tunnel junction
US6493371B1 (en) 1998-04-14 2002-12-10 Bandwidth9, Inc. Vertical cavity apparatus with tunnel junction
US6493373B1 (en) 1998-04-14 2002-12-10 Bandwidth 9, Inc. Vertical cavity apparatus with tunnel junction
US6535541B1 (en) 1998-04-14 2003-03-18 Bandwidth 9, Inc Vertical cavity apparatus with tunnel junction
US6760357B1 (en) 1998-04-14 2004-07-06 Bandwidth9 Vertical cavity apparatus with tunnel junction
US20100187571A1 (en) * 2009-01-27 2010-07-29 Panasonic Corporation Semiconductor device and manufacturing method thereof
US20110139979A1 (en) * 2008-06-20 2011-06-16 Carl Zeiss Nts, Llc. Isotope ion microscope methods and systems
US8512470B2 (en) 2011-04-08 2013-08-20 China Crystal Technologies Co. Ltd System and methods for growing high-resistance single crystals

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63183664U (ja) * 1987-05-16 1988-11-25

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3912556A (en) 1971-10-27 1975-10-14 Motorola Inc Method of fabricating a scannable light emitting diode array
US4355396A (en) 1979-11-23 1982-10-19 Rca Corporation Semiconductor laser diode and method of making the same
DE2421961C2 (de) 1974-05-07 1983-07-07 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Halbleiterlaser
US4447905A (en) 1981-03-25 1984-05-08 Bell Telephone Laboratories, Incorporated Current confinement in semiconductor light emitting devices

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3912556A (en) 1971-10-27 1975-10-14 Motorola Inc Method of fabricating a scannable light emitting diode array
DE2421961C2 (de) 1974-05-07 1983-07-07 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Halbleiterlaser
US4355396A (en) 1979-11-23 1982-10-19 Rca Corporation Semiconductor laser diode and method of making the same
US4447905A (en) 1981-03-25 1984-05-08 Bell Telephone Laboratories, Incorporated Current confinement in semiconductor light emitting devices

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5019886A (en) * 1986-01-21 1991-05-28 Fuji Electric Co., Ltd. Semiconductor-based radiation-detector element
US5156979A (en) * 1986-01-21 1992-10-20 Fuji Electric Co., Ltd. Semiconductor-based radiation-detector element
US5126277A (en) * 1988-06-07 1992-06-30 Oki Electric Industry Co., Ltd. Method of manufacturing a semiconductor device having a resistor
US5707879A (en) * 1997-01-08 1998-01-13 Reinitz; Karl Neutron detector based on semiconductor materials
US6222871B1 (en) 1998-03-30 2001-04-24 Bandwidth9 Vertical optical cavities produced with selective area epitaxy
US6760357B1 (en) 1998-04-14 2004-07-06 Bandwidth9 Vertical cavity apparatus with tunnel junction
US6493371B1 (en) 1998-04-14 2002-12-10 Bandwidth9, Inc. Vertical cavity apparatus with tunnel junction
US6535541B1 (en) 1998-04-14 2003-03-18 Bandwidth 9, Inc Vertical cavity apparatus with tunnel junction
US6366597B1 (en) 1998-04-14 2002-04-02 Bandwidth9 Inc. Lattice-relaxed vertical optical cavities
US6487230B1 (en) 1998-04-14 2002-11-26 Bandwidth 9, Inc Vertical cavity apparatus with tunnel junction
US6487231B1 (en) 1998-04-14 2002-11-26 Bandwidth 9, Inc. Vertical cavity apparatus with tunnel junction
US6493372B1 (en) 1998-04-14 2002-12-10 Bandwidth 9, Inc. Vertical cavity apparatus with tunnel junction
US6493373B1 (en) 1998-04-14 2002-12-10 Bandwidth 9, Inc. Vertical cavity apparatus with tunnel junction
US6226425B1 (en) 1999-02-24 2001-05-01 Bandwidth9 Flexible optical multiplexer
US6233263B1 (en) 1999-06-04 2001-05-15 Bandwidth9 Monitoring and control assembly for wavelength stabilized optical system
US6275513B1 (en) 1999-06-04 2001-08-14 Bandwidth 9 Hermetically sealed semiconductor laser device
US20110139979A1 (en) * 2008-06-20 2011-06-16 Carl Zeiss Nts, Llc. Isotope ion microscope methods and systems
US8399834B2 (en) * 2008-06-20 2013-03-19 Carl Zeiss Nts, Llc Isotope ion microscope methods and systems
US8648299B2 (en) 2008-06-20 2014-02-11 Carl Zeiss Microscopy, Llc Isotope ion microscope methods and systems
US20100187571A1 (en) * 2009-01-27 2010-07-29 Panasonic Corporation Semiconductor device and manufacturing method thereof
US8512470B2 (en) 2011-04-08 2013-08-20 China Crystal Technologies Co. Ltd System and methods for growing high-resistance single crystals

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