USD472529S1 - Semiconductor element - Google Patents
Semiconductor element Download PDFInfo
- Publication number
- USD472529S1 USD472529S1 US29/154,047 US15404702F USD472529S US D472529 S1 USD472529 S1 US D472529S1 US 15404702 F US15404702 F US 15404702F US D472529 S USD472529 S US D472529S
- Authority
- US
- United States
- Prior art keywords
- semiconductor element
- elevational view
- view
- side elevational
- new design
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Description
FIG. 1 is a top, front perspective view of a semiconductor element showing our new design;
FIG. 2 is a front elevational view thereof;
FIG. 3 is a rear elevational view thereof;
FIG. 4 is a right side elevational view thereof;
FIG. 5 is a left side elevational view thereof;
FIG. 6 is a top plan view thereof; and
FIG. 7 is a front elevational view of another embodiment of a semiconductor element, which is transparent, showing our new design;
FIG. 8 is a rear elevational view thereof;
FIG. 9 is a right side elevational view thereof;
FIG. 10 is a left side elevational view thereof; and,
FIG. 11 is a top plan view thereof, a bottom plan view thereof being a mirror image.
Portions in broken lines are for illustrative purposes only and form no part of claimed design.
Claims (1)
- The ornamental design for a semiconductor element, as shown and described.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US29/154,047 USD472529S1 (en) | 2002-01-17 | 2002-01-17 | Semiconductor element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US29/154,047 USD472529S1 (en) | 2002-01-17 | 2002-01-17 | Semiconductor element |
Publications (1)
Publication Number | Publication Date |
---|---|
USD472529S1 true USD472529S1 (en) | 2003-04-01 |
Family
ID=22549773
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US29/154,047 Expired - Lifetime USD472529S1 (en) | 2002-01-17 | 2002-01-17 | Semiconductor element |
Country Status (1)
Country | Link |
---|---|
US (1) | USD472529S1 (en) |
-
2002
- 2002-01-17 US US29/154,047 patent/USD472529S1/en not_active Expired - Lifetime
Non-Patent Citations (7)
Title |
---|
D. Kapolnek et al., "Spatial control of InGaN luminescence by MOCVD selective epitaxy," Journal of Crystal Growth, vols. 189/190, pp. 83-86, Elsevier Science (1998). |
J. Wang et al., "Fabrication of nanoscale structures of InGaN by MOCVD lateral overgrowth," Journal of Crystal Growth, vol. 197, pp. 48-53, Elsevier Science (1999). |
Koichi Tachibana et al., "Selective grough of InGaN quantum dot structures and their microphotoluminescence at room temperature," Applied Physics Letters, vol. 76, No. 22, pp. 3212-3214 American Institute of Physics (2000). |
Raj Singh et al., "Selective Area Growth of GaN Directly on (0001) Sapphire by the HVPE Technique," MRS Internet Journal of Nitride Semiconductor Research, vol. 3, Article 13, pp. 1-4, The Materials Research Society (1998). |
Takao Someya et al., "Ji-sedai Chikkabutsu Handotai Laser (Next Generation Nitride Semiconductor Laser," Oyo Butsuri (Applied Physics), vol. 69. No. 10, pp. 1198-1199, (2000) with partial translation. |
W. Yang et al., "Single-crystal GaN pyramids grown on (111) Si substrates by selective lateral overgrowth," Journal of Crystal Growth, vol. 204, pp. 270-274, Elsevier Science (1999). |
Zhigang Mao et al., "Defects in GaN Pyramids Grown on Si (111) Substrates by Selective Lateral Overgrowth," MRS Internet Journal of Nitride Semiconductor Research, vol. 4S1, G3.13, pp. 1-6, The Materials Research Society (1999). |
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