USD472529S1 - Semiconductor element - Google Patents
Semiconductor element Download PDFInfo
- Publication number
- USD472529S1 USD472529S1 US29/154,047 US15404702F USD472529S US D472529 S1 USD472529 S1 US D472529S1 US 15404702 F US15404702 F US 15404702F US D472529 S USD472529 S US D472529S
- Authority
- US
- United States
- Prior art keywords
- semiconductor element
- elevational view
- view
- side elevational
- new design
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Description
FIG. 1 is a top, front perspective view of a semiconductor element showing our new design;
FIG. 2 is a front elevational view thereof;
FIG. 3 is a rear elevational view thereof;
FIG. 4 is a right side elevational view thereof;
FIG. 5 is a left side elevational view thereof;
FIG. 6 is a top plan view thereof; and
FIG. 7 is a front elevational view of another embodiment of a semiconductor element, which is transparent, showing our new design;
FIG. 8 is a rear elevational view thereof;
FIG. 9 is a right side elevational view thereof;
FIG. 10 is a left side elevational view thereof; and,
FIG. 11 is a top plan view thereof, a bottom plan view thereof being a mirror image.
Portions in broken lines are for illustrative purposes only and form no part of claimed design.
Claims (1)
- The ornamental design for a semiconductor element, as shown and described.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US29/154,047 USD472529S1 (en) | 2002-01-17 | 2002-01-17 | Semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US29/154,047 USD472529S1 (en) | 2002-01-17 | 2002-01-17 | Semiconductor element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| USD472529S1 true USD472529S1 (en) | 2003-04-01 |
Family
ID=22549773
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US29/154,047 Expired - Lifetime USD472529S1 (en) | 2002-01-17 | 2002-01-17 | Semiconductor element |
Country Status (1)
| Country | Link |
|---|---|
| US (1) | USD472529S1 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| USD505924S1 (en) | 2003-11-13 | 2005-06-07 | Sony Corporation | Semiconductor element |
| USD505923S1 (en) | 2003-11-13 | 2005-06-07 | Sony Corporation | Semiconductor element |
| USD724554S1 (en) * | 2014-02-19 | 2015-03-17 | Fuji Electric Co., Ltd. | Semiconductor module |
Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4685996A (en) | 1986-10-14 | 1987-08-11 | Busta Heinz H | Method of making micromachined refractory metal field emitters |
| US5176557A (en) | 1987-02-06 | 1993-01-05 | Canon Kabushiki Kaisha | Electron emission element and method of manufacturing the same |
| US5201681A (en) | 1987-02-06 | 1993-04-13 | Canon Kabushiki Kaisha | Method of emitting electrons |
| US5399238A (en) | 1991-11-07 | 1995-03-21 | Microelectronics And Computer Technology Corporation | Method of making field emission tips using physical vapor deposition of random nuclei as etch mask |
| US5482002A (en) | 1987-09-24 | 1996-01-09 | Canon Kabushiki Kaisha | Microprobe, preparation thereof and electronic device by use of said microprobe |
| US5572041A (en) | 1992-09-16 | 1996-11-05 | Fujitsu Limited | Field emission cathode device made of semiconductor substrate |
| JP2830814B2 (en) | 1996-01-19 | 1998-12-02 | 日本電気株式会社 | Crystal growth method of gallium nitride based compound semiconductor and method of manufacturing semiconductor laser |
| US5861707A (en) | 1991-11-07 | 1999-01-19 | Si Diamond Technology, Inc. | Field emitter with wide band gap emission areas and method of using |
| US6051849A (en) | 1998-02-27 | 2000-04-18 | North Carolina State University | Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer |
| JP2000150391A (en) | 1998-11-11 | 2000-05-30 | Shiro Sakai | Selective growth method for crystal by focusing ion beam mask work |
| US6185013B1 (en) | 1996-12-23 | 2001-02-06 | Xerox Corporation | Color printing having a plural highlight color image map in a full color image |
| US6252261B1 (en) | 1998-09-30 | 2001-06-26 | Nec Corporation | GaN crystal film, a group III element nitride semiconductor wafer and a manufacturing process therefor |
| US6413627B1 (en) | 1998-06-18 | 2002-07-02 | Sumitomo Electric Industries, Ltd. | GaN single crystal substrate and method of producing same |
-
2002
- 2002-01-17 US US29/154,047 patent/USD472529S1/en not_active Expired - Lifetime
Patent Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4685996A (en) | 1986-10-14 | 1987-08-11 | Busta Heinz H | Method of making micromachined refractory metal field emitters |
| US5176557A (en) | 1987-02-06 | 1993-01-05 | Canon Kabushiki Kaisha | Electron emission element and method of manufacturing the same |
| US5201681A (en) | 1987-02-06 | 1993-04-13 | Canon Kabushiki Kaisha | Method of emitting electrons |
| US5482002A (en) | 1987-09-24 | 1996-01-09 | Canon Kabushiki Kaisha | Microprobe, preparation thereof and electronic device by use of said microprobe |
| US5861707A (en) | 1991-11-07 | 1999-01-19 | Si Diamond Technology, Inc. | Field emitter with wide band gap emission areas and method of using |
| US5399238A (en) | 1991-11-07 | 1995-03-21 | Microelectronics And Computer Technology Corporation | Method of making field emission tips using physical vapor deposition of random nuclei as etch mask |
| US5572041A (en) | 1992-09-16 | 1996-11-05 | Fujitsu Limited | Field emission cathode device made of semiconductor substrate |
| JP2830814B2 (en) | 1996-01-19 | 1998-12-02 | 日本電気株式会社 | Crystal growth method of gallium nitride based compound semiconductor and method of manufacturing semiconductor laser |
| US6185013B1 (en) | 1996-12-23 | 2001-02-06 | Xerox Corporation | Color printing having a plural highlight color image map in a full color image |
| US6051849A (en) | 1998-02-27 | 2000-04-18 | North Carolina State University | Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer |
| US6413627B1 (en) | 1998-06-18 | 2002-07-02 | Sumitomo Electric Industries, Ltd. | GaN single crystal substrate and method of producing same |
| US6252261B1 (en) | 1998-09-30 | 2001-06-26 | Nec Corporation | GaN crystal film, a group III element nitride semiconductor wafer and a manufacturing process therefor |
| JP2000150391A (en) | 1998-11-11 | 2000-05-30 | Shiro Sakai | Selective growth method for crystal by focusing ion beam mask work |
Non-Patent Citations (7)
| Title |
|---|
| D. Kapolnek et al., "Spatial control of InGaN luminescence by MOCVD selective epitaxy," Journal of Crystal Growth, vols. 189/190, pp. 83-86, Elsevier Science (1998). |
| J. Wang et al., "Fabrication of nanoscale structures of InGaN by MOCVD lateral overgrowth," Journal of Crystal Growth, vol. 197, pp. 48-53, Elsevier Science (1999). |
| Koichi Tachibana et al., "Selective grough of InGaN quantum dot structures and their microphotoluminescence at room temperature," Applied Physics Letters, vol. 76, No. 22, pp. 3212-3214 American Institute of Physics (2000). |
| Raj Singh et al., "Selective Area Growth of GaN Directly on (0001) Sapphire by the HVPE Technique," MRS Internet Journal of Nitride Semiconductor Research, vol. 3, Article 13, pp. 1-4, The Materials Research Society (1998). |
| Takao Someya et al., "Ji-sedai Chikkabutsu Handotai Laser (Next Generation Nitride Semiconductor Laser," Oyo Butsuri (Applied Physics), vol. 69. No. 10, pp. 1198-1199, (2000) with partial translation. |
| W. Yang et al., "Single-crystal GaN pyramids grown on (111) Si substrates by selective lateral overgrowth," Journal of Crystal Growth, vol. 204, pp. 270-274, Elsevier Science (1999). |
| Zhigang Mao et al., "Defects in GaN Pyramids Grown on Si (111) Substrates by Selective Lateral Overgrowth," MRS Internet Journal of Nitride Semiconductor Research, vol. 4S1, G3.13, pp. 1-6, The Materials Research Society (1999). |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| USD505924S1 (en) | 2003-11-13 | 2005-06-07 | Sony Corporation | Semiconductor element |
| USD505923S1 (en) | 2003-11-13 | 2005-06-07 | Sony Corporation | Semiconductor element |
| USD724554S1 (en) * | 2014-02-19 | 2015-03-17 | Fuji Electric Co., Ltd. | Semiconductor module |
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