USD472529S1 - Semiconductor element - Google Patents

Semiconductor element Download PDF

Info

Publication number
USD472529S1
USD472529S1 US29/154,047 US15404702F USD472529S US D472529 S1 USD472529 S1 US D472529S1 US 15404702 F US15404702 F US 15404702F US D472529 S USD472529 S US D472529S
Authority
US
United States
Prior art keywords
semiconductor element
elevational view
view
side elevational
new design
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US29/154,047
Inventor
Hiroyuki Okuyama
Masato Doi
Goshi Biwa
Toyoharu Oohata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to US29/154,047 priority Critical patent/USD472529S1/en
Assigned to SONY CORPORATION reassignment SONY CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: BIWA, GOSHI, DOI, MASATO, OKUYAMA, HIROYUKI, OOHATA, TOYAHARU
Application granted granted Critical
Publication of USD472529S1 publication Critical patent/USD472529S1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Description

FIG. 1 is a top, front perspective view of a semiconductor element showing our new design;
FIG. 2 is a front elevational view thereof;
FIG. 3 is a rear elevational view thereof;
FIG. 4 is a right side elevational view thereof;
FIG. 5 is a left side elevational view thereof;
FIG. 6 is a top plan view thereof; and
FIG. 7 is a front elevational view of another embodiment of a semiconductor element, which is transparent, showing our new design;
FIG. 8 is a rear elevational view thereof;
FIG. 9 is a right side elevational view thereof;
FIG. 10 is a left side elevational view thereof; and,
FIG. 11 is a top plan view thereof, a bottom plan view thereof being a mirror image.
Portions in broken lines are for illustrative purposes only and form no part of claimed design.

Claims (1)

  1. The ornamental design for a semiconductor element, as shown and described.
US29/154,047 2002-01-17 2002-01-17 Semiconductor element Expired - Lifetime USD472529S1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US29/154,047 USD472529S1 (en) 2002-01-17 2002-01-17 Semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US29/154,047 USD472529S1 (en) 2002-01-17 2002-01-17 Semiconductor element

Publications (1)

Publication Number Publication Date
USD472529S1 true USD472529S1 (en) 2003-04-01

Family

ID=22549773

Family Applications (1)

Application Number Title Priority Date Filing Date
US29/154,047 Expired - Lifetime USD472529S1 (en) 2002-01-17 2002-01-17 Semiconductor element

Country Status (1)

Country Link
US (1) USD472529S1 (en)

Non-Patent Citations (7)

* Cited by examiner, † Cited by third party
Title
D. Kapolnek et al., "Spatial control of InGaN luminescence by MOCVD selective epitaxy," Journal of Crystal Growth, vols. 189/190, pp. 83-86, Elsevier Science (1998).
J. Wang et al., "Fabrication of nanoscale structures of InGaN by MOCVD lateral overgrowth," Journal of Crystal Growth, vol. 197, pp. 48-53, Elsevier Science (1999).
Koichi Tachibana et al., "Selective grough of InGaN quantum dot structures and their microphotoluminescence at room temperature," Applied Physics Letters, vol. 76, No. 22, pp. 3212-3214 American Institute of Physics (2000).
Raj Singh et al., "Selective Area Growth of GaN Directly on (0001) Sapphire by the HVPE Technique," MRS Internet Journal of Nitride Semiconductor Research, vol. 3, Article 13, pp. 1-4, The Materials Research Society (1998).
Takao Someya et al., "Ji-sedai Chikkabutsu Handotai Laser (Next Generation Nitride Semiconductor Laser," Oyo Butsuri (Applied Physics), vol. 69. No. 10, pp. 1198-1199, (2000) with partial translation.
W. Yang et al., "Single-crystal GaN pyramids grown on (111) Si substrates by selective lateral overgrowth," Journal of Crystal Growth, vol. 204, pp. 270-274, Elsevier Science (1999).
Zhigang Mao et al., "Defects in GaN Pyramids Grown on Si (111) Substrates by Selective Lateral Overgrowth," MRS Internet Journal of Nitride Semiconductor Research, vol. 4S1, G3.13, pp. 1-6, The Materials Research Society (1999).

Similar Documents

Publication Publication Date Title
USD541159S1 (en) Package
USD495961S1 (en) Bottle
USD485942S1 (en) Capsule
USD474224S1 (en) Pair of eyeglasses
USD499678S1 (en) Mirror holder
USD486737S1 (en) Bottle
USD533456S1 (en) Lotion bottle
USD476962S1 (en) Semiconductor device
USD489626S1 (en) Bottle
USD486743S1 (en) Portion of a bottle
USD501793S1 (en) Container
USD475355S1 (en) Semiconductor device
USD482274S1 (en) Container
USD475982S1 (en) Semiconductor device
USD479669S1 (en) Beverageware
USD482438S1 (en) Fan
USD501637S1 (en) Container
USD475028S1 (en) Semiconductor device
USD479312S1 (en) Spout
USD492009S1 (en) Low spout
USD496864S1 (en) Container
USD480916S1 (en) Beverageware
USD475764S1 (en) Faucet
USD474115S1 (en) Container
USD484711S1 (en) Chair