USB548302I5 - - Google Patents
Info
- Publication number
- USB548302I5 USB548302I5 US54830275A USB548302I5 US B548302 I5 USB548302 I5 US B548302I5 US 54830275 A US54830275 A US 54830275A US B548302 I5 USB548302 I5 US B548302I5
- Authority
- US
- United States
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
- H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/548,302 US3983414A (en) | 1975-02-10 | 1975-02-10 | Charge cancelling structure and method for integrated circuits |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/548,302 US3983414A (en) | 1975-02-10 | 1975-02-10 | Charge cancelling structure and method for integrated circuits |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| USB548302I5 true USB548302I5 (enEXAMPLES) | 1976-02-17 |
| US3983414A US3983414A (en) | 1976-09-28 |
Family
ID=24188241
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US05/548,302 Expired - Lifetime US3983414A (en) | 1975-02-10 | 1975-02-10 | Charge cancelling structure and method for integrated circuits |
Country Status (1)
| Country | Link |
|---|---|
| US (1) | US3983414A (enEXAMPLES) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IT1075851B (it) * | 1975-11-17 | 1985-04-22 | Ibm | Circuito perfezionato a trasferimento di carica |
| US4075509A (en) * | 1976-10-12 | 1978-02-21 | National Semiconductor Corporation | Cmos comparator circuit and method of manufacture |
| US4082966A (en) * | 1976-12-27 | 1978-04-04 | Texas Instruments Incorporated | Mos detector or sensing circuit |
| US4198580A (en) * | 1978-05-30 | 1980-04-15 | National Semiconductor Corporation | MOSFET switching device with charge cancellation |
| NL8003874A (nl) * | 1980-07-04 | 1982-02-01 | Philips Nv | Veldeffektcapaciteit. |
| US4467227A (en) * | 1981-10-29 | 1984-08-21 | Hughes Aircraft Company | Channel charge compensation switch with first order process independence |
| JPS5875922A (ja) * | 1981-10-30 | 1983-05-07 | Toshiba Corp | 半導体スイツチ回路 |
| GB2170954B (en) * | 1985-02-13 | 1988-09-07 | Rca Corp | Transmission gates with compensation |
| US5084634A (en) * | 1990-10-24 | 1992-01-28 | Burr-Brown Corporation | Dynamic input sampling switch for CDACS |
| JPH04287418A (ja) * | 1991-03-18 | 1992-10-13 | Fujitsu Ltd | 半導体集積回路 |
| US5386151A (en) * | 1993-08-11 | 1995-01-31 | Advanced Micro Devices, Inc. | Low voltage charge pumps using p-well driven MOS capacitors |
| US6804502B2 (en) | 2001-10-10 | 2004-10-12 | Peregrine Semiconductor Corporation | Switch circuit and method of switching radio frequency signals |
| US7498862B2 (en) * | 2005-05-31 | 2009-03-03 | Texas Instruments Incorporated | Switch for handling terminal voltages exceeding control voltage |
| US20080076371A1 (en) | 2005-07-11 | 2008-03-27 | Alexander Dribinsky | Circuit and method for controlling charge injection in radio frequency switches |
| US9653601B2 (en) | 2005-07-11 | 2017-05-16 | Peregrine Semiconductor Corporation | Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction |
| US7890891B2 (en) | 2005-07-11 | 2011-02-15 | Peregrine Semiconductor Corporation | Method and apparatus improving gate oxide reliability by controlling accumulated charge |
| US7910993B2 (en) | 2005-07-11 | 2011-03-22 | Peregrine Semiconductor Corporation | Method and apparatus for use in improving linearity of MOSFET's using an accumulated charge sink |
| USRE48965E1 (en) | 2005-07-11 | 2022-03-08 | Psemi Corporation | Method and apparatus improving gate oxide reliability by controlling accumulated charge |
| JP5765274B2 (ja) * | 2012-03-12 | 2015-08-19 | 株式会社デンソー | アナログスイッチ |
| US9590674B2 (en) | 2012-12-14 | 2017-03-07 | Peregrine Semiconductor Corporation | Semiconductor devices with switchable ground-body connection |
| US9831857B2 (en) | 2015-03-11 | 2017-11-28 | Peregrine Semiconductor Corporation | Power splitter with programmable output phase shift |
| US10505530B2 (en) | 2018-03-28 | 2019-12-10 | Psemi Corporation | Positive logic switch with selectable DC blocking circuit |
| US10886911B2 (en) | 2018-03-28 | 2021-01-05 | Psemi Corporation | Stacked FET switch bias ladders |
| US10236872B1 (en) | 2018-03-28 | 2019-03-19 | Psemi Corporation | AC coupling modules for bias ladders |
| US11476849B2 (en) | 2020-01-06 | 2022-10-18 | Psemi Corporation | High power positive logic switch |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3636378A (en) * | 1968-08-09 | 1972-01-18 | Hitachi Ltd | Series-shunt-type semiconductor switching circuit |
| US3662356A (en) * | 1970-08-28 | 1972-05-09 | Gen Electric | Integrated circuit bistable memory cell using charge-pumped devices |
| US3704384A (en) * | 1971-03-30 | 1972-11-28 | Ibm | Monolithic capacitor structure |
| US3753132A (en) * | 1972-03-02 | 1973-08-14 | Us Navy | Sample-and-hold circuit |
| US3808458A (en) * | 1972-11-30 | 1974-04-30 | Gen Electric | Dynamic shift register |
| US3859545A (en) * | 1973-12-10 | 1975-01-07 | Bell Telephone Labor Inc | Low power dynamic control circuitry |
-
1975
- 1975-02-10 US US05/548,302 patent/US3983414A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US3983414A (en) | 1976-09-28 |