USB518226I5 - - Google Patents

Info

Publication number
USB518226I5
USB518226I5 US51822674A USB518226I5 US B518226 I5 USB518226 I5 US B518226I5 US 51822674 A US51822674 A US 51822674A US B518226 I5 USB518226 I5 US B518226I5
Authority
US
United States
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of USB518226I5 publication Critical patent/USB518226I5/en
Application granted granted Critical
Publication of US3993509A publication Critical patent/US3993509A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/001—Electric or magnetic imagery, e.g., xerography, electrography, magnetography, etc. Process, composition, or product
    • Y10S430/102—Electrically charging radiation-conductive surface

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
US05/518,226 1973-11-07 1974-10-29 Semiconductor device manufacture Expired - Lifetime US3993509A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB5161973A GB1443215A (en) 1973-11-07 1973-11-07 Electrostatically clamping a semiconductor wafer during device manufacture
UK51619/73 1973-11-07

Publications (2)

Publication Number Publication Date
USB518226I5 true USB518226I5 (xx) 1976-02-10
US3993509A US3993509A (en) 1976-11-23

Family

ID=10460739

Family Applications (1)

Application Number Title Priority Date Filing Date
US05/518,226 Expired - Lifetime US3993509A (en) 1973-11-07 1974-10-29 Semiconductor device manufacture

Country Status (2)

Country Link
US (1) US3993509A (xx)
GB (1) GB1443215A (xx)

Families Citing this family (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4282924A (en) * 1979-03-16 1981-08-11 Varian Associates, Inc. Apparatus for mechanically clamping semiconductor wafer against pliable thermally conductive surface
US4354111A (en) * 1981-03-10 1982-10-12 Veeco Instruments Incorporated Screen lens array system
GB2106325A (en) * 1981-09-14 1983-04-07 Philips Electronic Associated Electrostatic chuck
JPS5883145U (ja) * 1981-12-01 1983-06-06 日本電子株式会社 試料加熱機構
US4412133A (en) * 1982-01-05 1983-10-25 The Perkin-Elmer Corp. Electrostatic cassette
JPS6059104B2 (ja) * 1982-02-03 1985-12-23 株式会社東芝 静電チヤツク板
EP0095372B1 (en) * 1982-05-25 1989-08-30 Varian Associates, Inc. Optimum surface contour for conductive heat transfer with a thin flexible workpiece
EP0138254B1 (en) * 1983-09-30 1988-06-01 Philips Electronics Uk Limited Electrostatic chuck and loading method
GB2147459A (en) * 1983-09-30 1985-05-09 Philips Electronic Associated Electrostatic chuck for semiconductor wafers
JPS6099538A (ja) * 1983-11-01 1985-06-03 横河・ヒュ−レット・パッカ−ド株式会社 ピンチヤツク
FR2565869B1 (fr) * 1984-06-18 1986-08-29 Sulzer Electro Tech Procede et dispositif pour la manipulation de plaquettes circulaires notamment en vue de leur immatriculation par rayons laser
JPS6131636U (ja) * 1984-07-31 1986-02-26 株式会社 徳田製作所 静電チヤツク
JPS61192435A (ja) * 1985-02-21 1986-08-27 Canon Inc 静電吸着保持装置
US4963921A (en) * 1985-06-24 1990-10-16 Canon Kabushiki Kaisha Device for holding a mask
DE3879295T2 (de) * 1987-04-14 1993-07-01 Abisare Kakegawa Kk Maschine-einheit mit einer statische elektrizitaet benutzenden haltevorrichtung.
JP2521471B2 (ja) * 1987-05-14 1996-08-07 富士通株式会社 静電吸着装置
US4997606A (en) * 1988-01-07 1991-03-05 Varian Associates, Inc. Methods and apparatus for fabricating a high purity thermally-conductive polymer layer
US4832781A (en) * 1988-01-07 1989-05-23 Varian Associates, Inc. Methods and apparatus for thermal transfer with a semiconductor wafer in vacuum
US4938992A (en) * 1988-01-07 1990-07-03 Varian Associates, Inc. Methods for thermal transfer with a semiconductor
JP2779950B2 (ja) * 1989-04-25 1998-07-23 東陶機器株式会社 静電チャックの電圧印加方法および電圧印加装置
JPH0670986B2 (ja) * 1989-09-27 1994-09-07 株式会社日立製作所 真空処理装置の試料保持方法
DE69103915T2 (de) * 1990-01-25 1995-05-11 Applied Materials Inc Elektrostatische Klemmvorrichtung und Verfahren.
US5452177A (en) * 1990-06-08 1995-09-19 Varian Associates, Inc. Electrostatic wafer clamp
US5200232A (en) * 1990-12-11 1993-04-06 Lam Research Corporation Reaction chamber design and method to minimize particle generation in chemical vapor deposition reactors
US5155368A (en) * 1991-04-16 1992-10-13 Micrion Corporation Ion beam blanking apparatus and method
US5191506A (en) * 1991-05-02 1993-03-02 International Business Machines Corporation Ceramic electrostatic chuck
US5155652A (en) * 1991-05-02 1992-10-13 International Business Machines Corporation Temperature cycling ceramic electrostatic chuck
US5600530A (en) * 1992-08-04 1997-02-04 The Morgan Crucible Company Plc Electrostatic chuck
US5822171A (en) 1994-02-22 1998-10-13 Applied Materials, Inc. Electrostatic chuck with improved erosion resistance
FR2724269B1 (fr) 1994-09-06 1996-10-18 Commissariat Energie Atomique Porte-substrat electrostatique
US5671116A (en) * 1995-03-10 1997-09-23 Lam Research Corporation Multilayered electrostatic chuck and method of manufacture thereof
US5668018A (en) * 1995-06-07 1997-09-16 International Business Machines Corporation Method for defining a region on a wall of a semiconductor structure
US5835333A (en) * 1995-10-30 1998-11-10 Lam Research Corporation Negative offset bipolar electrostatic chucks
US5897711A (en) * 1995-12-22 1999-04-27 Lam Research Corporation Method and apparatus for improving refractive index of dielectric films
US6042901A (en) * 1996-02-20 2000-03-28 Lam Research Corporation Method for depositing fluorine doped silicon dioxide films
US5812361A (en) * 1996-03-29 1998-09-22 Lam Research Corporation Dynamic feedback electrostatic wafer chuck
US5764471A (en) * 1996-05-08 1998-06-09 Applied Materials, Inc. Method and apparatus for balancing an electrostatic force produced by an electrostatic chuck
US6354791B1 (en) * 1997-04-11 2002-03-12 Applied Materials, Inc. Water lift mechanism with electrostatic pickup and method for transferring a workpiece
US5869149A (en) * 1997-06-30 1999-02-09 Lam Research Corporation Method for preparing nitrogen surface treated fluorine doped silicon dioxide films
US5969934A (en) * 1998-04-10 1999-10-19 Varian Semiconductor Equipment Associats, Inc. Electrostatic wafer clamp having low particulate contamination of wafers
DE19853092B4 (de) * 1998-11-18 2004-10-21 Leica Microsystems Lithography Gmbh Übernahme- und Haltesystem für ein Substrat
US6215642B1 (en) 1999-03-11 2001-04-10 Nikon Corporation Of Japan Vacuum compatible, deformable electrostatic chuck with high thermal conductivity
US6538873B1 (en) 1999-11-02 2003-03-25 Varian Semiconductor Equipment Associates, Inc. Active electrostatic seal and electrostatic vacuum pump
US6362946B1 (en) 1999-11-02 2002-03-26 Varian Semiconductor Equipment Associates, Inc. Electrostatic wafer clamp having electrostatic seal for retaining gas
US6686598B1 (en) 2000-09-01 2004-02-03 Varian Semiconductor Equipment Associates, Inc. Wafer clamping apparatus and method
FR2818050B1 (fr) * 2000-12-12 2006-08-11 Semco Engineering Sa Dispositif de prehension electrostatique d'une tranche de composant electronique
DE10235814B3 (de) * 2002-08-05 2004-03-11 Infineon Technologies Ag Verfahren zur lösbaren Montage eines zu prozessierenden Halbleitersubstrats auf einem Trägerwafer
US20040066601A1 (en) * 2002-10-04 2004-04-08 Varian Semiconductor Equipment Associates, Inc. Electrode configuration for retaining cooling gas on electrostatic wafer clamp
JP3790215B2 (ja) * 2002-12-26 2006-06-28 株式会社東芝 半導体装置の製造方法及び半導体製造装置
US7430104B2 (en) * 2003-03-11 2008-09-30 Appiled Materials, Inc. Electrostatic chuck for wafer metrology and inspection equipment
US7867403B2 (en) * 2006-06-05 2011-01-11 Jason Plumhoff Temperature control method for photolithographic substrate
US7807983B2 (en) * 2007-01-12 2010-10-05 Varian Semiconductor Equipment Associates, Inc. Technique for reducing magnetic fields at an implant location
WO2010090948A1 (en) 2009-02-04 2010-08-12 Mattson Technology, Inc. Electrostatic chuck system and process for radially tuning the temperature profile across the surface of a substrate
JP4801769B2 (ja) * 2009-11-30 2011-10-26 三菱重工業株式会社 接合方法、接合装置制御装置、接合装置
JP6132907B2 (ja) * 2013-05-14 2017-05-24 株式会社日立製作所 試料ホルダ及びそれを備えた集束イオンビーム加工装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3383567A (en) * 1965-09-15 1968-05-14 Ion Physics Corp Solid state translating device comprising irradiation implanted conductivity ions
US3413531A (en) * 1966-09-06 1968-11-26 Ion Physics Corp High frequency field effect transistor
US3547074A (en) * 1967-04-13 1970-12-15 Block Engineering Apparatus for forming microelements
US3750083A (en) * 1968-11-14 1973-07-31 Minnesota Mining & Mfg Magnetic electric connector
FR2076567A5 (xx) * 1970-01-20 1971-10-15 Commissariat Energie Atomique

Also Published As

Publication number Publication date
US3993509A (en) 1976-11-23
GB1443215A (en) 1976-07-21

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