USB382021I5 - - Google Patents

Info

Publication number
USB382021I5
USB382021I5 US38202173A USB382021I5 US B382021 I5 USB382021 I5 US B382021I5 US 38202173 A US38202173 A US 38202173A US B382021 I5 USB382021 I5 US B382021I5
Authority
US
United States
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to US382021A priority Critical patent/US3913212A/en
Priority to CA187,055A priority patent/CA1016640A/en
Priority to DE2361372A priority patent/DE2361372A1/de
Priority to US423453A priority patent/US3875451A/en
Priority to GB5768673A priority patent/GB1450433A/en
Priority to BE138908A priority patent/BE808680A/xx
Priority to IT70716/73A priority patent/IT1000511B/it
Priority to NL7317181A priority patent/NL7317181A/xx
Priority to FR7344877A priority patent/FR2210828B1/fr
Priority to JP48140190A priority patent/JPS4990895A/ja
Priority to US499172A priority patent/US3922553A/en
Publication of USB382021I5 publication Critical patent/USB382021I5/en
Application granted granted Critical
Publication of US3913212A publication Critical patent/US3913212A/en
Priority to CA268,977A priority patent/CA1017044A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C30B19/04—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux the solvent being a component of the crystal composition
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/061—Tipping system, e.g. by rotation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/44—Gallium phosphide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/222—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN heterojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/8242—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP characterised by the dopants
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/93—Ternary or quaternary semiconductor comprised of elements from three different groups, e.g. I-III-V

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Led Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Light Receiving Elements (AREA)
US382021A 1972-12-15 1973-07-23 Near-infrared light emitting diodes and detectors employing CdSnP{HD 2{B :InP heterodiodes Expired - Lifetime US3913212A (en)

Priority Applications (12)

Application Number Priority Date Filing Date Title
US382021A US3913212A (en) 1972-12-15 1973-07-23 Near-infrared light emitting diodes and detectors employing CdSnP{HD 2{B :InP heterodiodes
CA187,055A CA1016640A (en) 1972-12-15 1973-11-30 Near-infrared light emitting diodes and detectors employing cdsnp2:inp heterodiodes
DE2361372A DE2361372A1 (de) 1972-12-15 1973-12-10 Lichtdetektor- und lichtemittierende flaechendioden
US423453A US3875451A (en) 1972-12-15 1973-12-10 Near-infrared light-emitting and light-detecting indium phosphide homodiodes including cadmium tin phosphide therein
GB5768673A GB1450433A (en) 1972-12-15 1973-12-12 Light detecting and emitting junction diodes
IT70716/73A IT1000511B (it) 1972-12-15 1973-12-14 Diodo emettitore di luce prossima all infrarosso e procedimento per la sua fabbricazione
BE138908A BE808680A (fr) 1972-12-15 1973-12-14 Diode a jonction pour la detection de l'emission de lumiere
NL7317181A NL7317181A (is") 1972-12-15 1973-12-14
FR7344877A FR2210828B1 (is") 1972-12-15 1973-12-14
JP48140190A JPS4990895A (is") 1972-12-15 1973-12-15
US499172A US3922553A (en) 1972-12-15 1974-08-21 Near-infrared light emitting diodes and detectors employing CdSnP{HD 2{B :InP heterodiodes
CA268,977A CA1017044A (en) 1972-12-15 1976-12-31 Light-emitting diodes

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US31535972A 1972-12-15 1972-12-15
US382021A US3913212A (en) 1972-12-15 1973-07-23 Near-infrared light emitting diodes and detectors employing CdSnP{HD 2{B :InP heterodiodes

Publications (2)

Publication Number Publication Date
USB382021I5 true USB382021I5 (is") 1975-01-28
US3913212A US3913212A (en) 1975-10-21

Family

ID=26979849

Family Applications (1)

Application Number Title Priority Date Filing Date
US382021A Expired - Lifetime US3913212A (en) 1972-12-15 1973-07-23 Near-infrared light emitting diodes and detectors employing CdSnP{HD 2{B :InP heterodiodes

Country Status (9)

Country Link
US (1) US3913212A (is")
JP (1) JPS4990895A (is")
BE (1) BE808680A (is")
CA (1) CA1016640A (is")
DE (1) DE2361372A1 (is")
FR (1) FR2210828B1 (is")
GB (1) GB1450433A (is")
IT (1) IT1000511B (is")
NL (1) NL7317181A (is")

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113019381A (zh) * 2021-03-03 2021-06-25 东北师范大学 一种三维多孔自支撑NiO/ZnO异质结材料及其制备方法

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2445146C3 (de) * 1974-09-20 1979-03-08 Max-Planck-Gesellschaft Zur Foerderung Der Wissenschaften E.V., 3400 Goettingen Verfahren und Vorrichtung zur Ausbildung epitaktischer Schichten
US4203785A (en) * 1978-11-30 1980-05-20 Rca Corporation Method of epitaxially depositing cadmium sulfide
US7125453B2 (en) * 2002-01-31 2006-10-24 General Electric Company High temperature high pressure capsule for processing materials in supercritical fluids
US7063741B2 (en) * 2002-03-27 2006-06-20 General Electric Company High pressure high temperature growth of crystalline group III metal nitrides
JP4276627B2 (ja) * 2005-01-12 2009-06-10 ソルボサーマル結晶成長技術研究組合 単結晶育成用圧力容器およびその製造方法
US7704324B2 (en) * 2005-01-25 2010-04-27 General Electric Company Apparatus for processing materials in supercritical fluids and methods thereof
US7942970B2 (en) 2005-12-20 2011-05-17 Momentive Performance Materials Inc. Apparatus for making crystalline composition

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3614549A (en) * 1968-10-15 1971-10-19 Ibm A semiconductor recombination radiation device
US3636354A (en) * 1970-03-23 1972-01-18 Bell Telephone Labor Inc Near-infrared detector employing cadmium tin phosphide
US3705825A (en) * 1969-02-19 1972-12-12 Siemens Ag Growth layer of semiconductor compounds produced by melt epitaxy
US3785885A (en) * 1970-03-24 1974-01-15 Texas Instruments Inc Epitaxial solution growth of ternary iii-v compounds

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3614549A (en) * 1968-10-15 1971-10-19 Ibm A semiconductor recombination radiation device
US3705825A (en) * 1969-02-19 1972-12-12 Siemens Ag Growth layer of semiconductor compounds produced by melt epitaxy
US3636354A (en) * 1970-03-23 1972-01-18 Bell Telephone Labor Inc Near-infrared detector employing cadmium tin phosphide
US3785885A (en) * 1970-03-24 1974-01-15 Texas Instruments Inc Epitaxial solution growth of ternary iii-v compounds

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113019381A (zh) * 2021-03-03 2021-06-25 东北师范大学 一种三维多孔自支撑NiO/ZnO异质结材料及其制备方法
CN113019381B (zh) * 2021-03-03 2022-08-16 东北师范大学 一种三维多孔自支撑NiO/ZnO异质结材料及其制备方法

Also Published As

Publication number Publication date
FR2210828B1 (is") 1978-06-23
JPS4990895A (is") 1974-08-30
IT1000511B (it) 1976-04-10
CA1016640A (en) 1977-08-30
GB1450433A (en) 1976-09-22
NL7317181A (is") 1974-06-18
FR2210828A1 (is") 1974-07-12
US3913212A (en) 1975-10-21
BE808680A (fr) 1974-03-29
DE2361372A1 (de) 1974-06-20

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