USB351348I5 - - Google Patents

Info

Publication number
USB351348I5
USB351348I5 US35134873A USB351348I5 US B351348 I5 USB351348 I5 US B351348I5 US 35134873 A US35134873 A US 35134873A US B351348 I5 USB351348 I5 US B351348I5
Authority
US
United States
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to US351348A priority Critical patent/US3923563A/en
Priority to US503303A priority patent/US3920882A/en
Publication of USB351348I5 publication Critical patent/USB351348I5/en
Application granted granted Critical
Publication of US3923563A publication Critical patent/US3923563A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/16—Feed and outlet means for the gases; Modifying the flow of the gases
    • C30B31/165—Diffusion sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/2225—Diffusion sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S252/00—Compositions
    • Y10S252/95—Doping agent source material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S252/00—Compositions
    • Y10S252/95—Doping agent source material
    • Y10S252/951—Doping agent source material for vapor transport

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
US351348A 1973-04-16 1973-04-16 Process for doping silicon semiconductors using an impregnated refractory dopant source Expired - Lifetime US3923563A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US351348A US3923563A (en) 1973-04-16 1973-04-16 Process for doping silicon semiconductors using an impregnated refractory dopant source
US503303A US3920882A (en) 1973-04-16 1974-09-05 N-type dopant source

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US351348A US3923563A (en) 1973-04-16 1973-04-16 Process for doping silicon semiconductors using an impregnated refractory dopant source

Publications (2)

Publication Number Publication Date
USB351348I5 true USB351348I5 (pl) 1975-01-28
US3923563A US3923563A (en) 1975-12-02

Family

ID=23380532

Family Applications (1)

Application Number Title Priority Date Filing Date
US351348A Expired - Lifetime US3923563A (en) 1973-04-16 1973-04-16 Process for doping silicon semiconductors using an impregnated refractory dopant source

Country Status (1)

Country Link
US (1) US3923563A (pl)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3954525A (en) 1974-08-26 1976-05-04 The Carborundum Company Hot-pressed solid diffusion sources for phosphorus

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3998667A (en) * 1974-12-20 1976-12-21 Owens-Illinois, Inc. Barium aluminoborosilicate glass-ceramics for semiconductor doping
DE2830035C2 (de) * 1977-07-15 1984-05-17 Matsushita Electric Industrial Co., Ltd., Kadoma, Osaka Verfahren, bei arsenhaltigen Oxidfilmen auf einer Halbleitervorrichtung die Verarmung an Arsen zu verhindern
JPS5824006B2 (ja) * 1980-01-30 1983-05-18 株式会社日立製作所 不純物拡散法
US4798764A (en) * 1983-06-08 1989-01-17 Stemcor Corporation Arsenate dopant sources and method of making the sources
CA1217507A (en) * 1983-06-08 1987-02-03 Martin R. Kasprzyk Foam semiconductor dopant carriers
US4596716A (en) * 1983-06-08 1986-06-24 Kennecott Corporation Porous silicon nitride semiconductor dopant carriers
US4588455A (en) * 1984-08-15 1986-05-13 Emulsitone Company Planar diffusion source
US4592793A (en) * 1985-03-15 1986-06-03 International Business Machines Corporation Process for diffusing impurities into a semiconductor body vapor phase diffusion of III-V semiconductor substrates
US4764026A (en) * 1986-07-07 1988-08-16 Varian Associates, Inc. Semiconductor wafer temperature measuring device and method
US4749615A (en) * 1986-10-31 1988-06-07 Stemcor Corporation Semiconductor dopant source
EP0485122A1 (en) * 1990-11-07 1992-05-13 The Carborundum Company Cerium pentaphosphate planar diffusion source for doping at low temperatures
US5972784A (en) * 1997-04-24 1999-10-26 Georgia Tech Research Corporation Arrangement, dopant source, and method for making solar cells
US7244513B2 (en) * 2003-02-21 2007-07-17 Nano-Proprietary, Inc. Stain-etched silicon powder
DE102008014824B4 (de) 2008-03-18 2014-07-10 Leonhard Kurz Stiftung & Co. Kg Dotierfolien und deren Verwendung
EP2681045A4 (en) * 2011-03-02 2015-01-14 Applied Thin Films Inc PROTECTIVE INTERIOR COATINGS FOR POROUS SUBSTRATES
US10522354B2 (en) * 2017-06-08 2019-12-31 Lam Research Corporation Antimony co-doping with phosphorus to form ultrashallow junctions using atomic layer deposition and annealing

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3167461A (en) * 1960-12-30 1965-01-26 Ibm Process of preparing degenerately doped semiconductor source material
US3374125A (en) * 1965-05-10 1968-03-19 Rca Corp Method of forming a pn junction by vaporization
US3530016A (en) * 1967-07-10 1970-09-22 Marconi Co Ltd Methods of manufacturing semiconductor devices
US3644154A (en) * 1969-06-09 1972-02-22 Ibm Method of fabricating semiconductor structures with reduced crystallographic defects
US3658606A (en) * 1969-04-01 1972-04-25 Ibm Diffusion source and method of producing same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3167461A (en) * 1960-12-30 1965-01-26 Ibm Process of preparing degenerately doped semiconductor source material
US3374125A (en) * 1965-05-10 1968-03-19 Rca Corp Method of forming a pn junction by vaporization
US3530016A (en) * 1967-07-10 1970-09-22 Marconi Co Ltd Methods of manufacturing semiconductor devices
US3658606A (en) * 1969-04-01 1972-04-25 Ibm Diffusion source and method of producing same
US3644154A (en) * 1969-06-09 1972-02-22 Ibm Method of fabricating semiconductor structures with reduced crystallographic defects

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Ceramic Industry Magazine, Jan. 1967, p. 63 *
Kingery W., Ceramic Fabrication Processes, New York, 1958, p. 151 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3954525A (en) 1974-08-26 1976-05-04 The Carborundum Company Hot-pressed solid diffusion sources for phosphorus

Also Published As

Publication number Publication date
US3923563A (en) 1975-12-02

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Legal Events

Date Code Title Description
AS Assignment

Owner name: OWENS-ILLINOIS GLASS CONTAINER INC., ONE SEAGATE,

Free format text: ASSIGNS AS OF APRIL 15, 1987 THE ENTIRE INTEREST;ASSIGNOR:OWENS-ILLINOIS, INC.;REEL/FRAME:004869/0922

Effective date: 19870323

Owner name: OWENS-ILLINOIS GLASS CONTAINER INC.,OHIO

Free format text: ASSIGNS AS OF APRIL 15, 1987 THE ENTIRE INTEREST;ASSIGNOR:OWENS-ILLINOIS, INC.;REEL/FRAME:004869/0922

Effective date: 19870323