USB292126I5 - - Google Patents

Info

Publication number
USB292126I5
USB292126I5 US29212672A USB292126I5 US B292126 I5 USB292126 I5 US B292126I5 US 29212672 A US29212672 A US 29212672A US B292126 I5 USB292126 I5 US B292126I5
Authority
US
United States
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to US292126A priority Critical patent/US3914465A/en
Publication of USB292126I5 publication Critical patent/USB292126I5/en
Application granted granted Critical
Publication of US3914465A publication Critical patent/US3914465A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30612—Etching of AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02241—III-V semiconductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/017—Clean surfaces
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/056—Gallium arsenide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/118—Oxide films

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Formation Of Insulating Films (AREA)
US292126A 1972-09-25 1972-09-25 Surface passivation of GaAs junction laser devices Expired - Lifetime US3914465A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US292126A US3914465A (en) 1972-09-25 1972-09-25 Surface passivation of GaAs junction laser devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US292126A US3914465A (en) 1972-09-25 1972-09-25 Surface passivation of GaAs junction laser devices

Publications (2)

Publication Number Publication Date
USB292126I5 true USB292126I5 (en, 2012) 1975-01-28
US3914465A US3914465A (en) 1975-10-21

Family

ID=23123340

Family Applications (1)

Application Number Title Priority Date Filing Date
US292126A Expired - Lifetime US3914465A (en) 1972-09-25 1972-09-25 Surface passivation of GaAs junction laser devices

Country Status (1)

Country Link
US (1) US3914465A (en, 2012)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3982265A (en) * 1975-09-19 1976-09-21 Bell Telephone Laboratories, Incorporated Devices containing aluminum-V semiconductor and method for making
JPS5275181A (en) * 1975-12-13 1977-06-23 Sony Corp Formation of oxide film
US4178564A (en) * 1976-01-15 1979-12-11 Rca Corporation Half wave protection layers on injection lasers
US4098921A (en) * 1976-04-28 1978-07-04 Cutler-Hammer Tantalum-gallium arsenide schottky barrier semiconductor device
US4216036A (en) * 1978-08-28 1980-08-05 Bell Telephone Laboratories, Incorporated Self-terminating thermal oxidation of Al-containing group III-V compound layers
US4246296A (en) * 1979-02-14 1981-01-20 Bell Telephone Laboratories, Incorporated Controlling the properties of native films using selective growth chemistry
JPS55115386A (en) * 1979-02-26 1980-09-05 Hitachi Ltd Semiconductor laser unit
FR2465337A1 (fr) * 1979-09-11 1981-03-20 Landreau Jean Procede de fabrication d'un laser a semi-conducteur a confinements transverses optique et electrique et laser obtenu par ce procede
US4317086A (en) * 1979-09-13 1982-02-23 Xerox Corporation Passivation and reflector structure for electroluminescent devices
US4843450A (en) * 1986-06-16 1989-06-27 International Business Machines Corporation Compound semiconductor interface control
FR2619398A1 (fr) * 1987-08-12 1989-02-17 Loualiche Slimane Procede de fabrication d'une couche mince d'oxyde sur un materiau iii-v, couche d'oxyde obtenue par ce procede et application a une diode schottky
JPH088256B2 (ja) * 1990-06-06 1996-01-29 松下電器産業株式会社 化合物半導体のパッシベーション膜の製造方法
US5262360A (en) * 1990-12-31 1993-11-16 The Board Of Trustees Of The University Of Illinois AlGaAs native oxide
JP2817590B2 (ja) * 1993-09-24 1998-10-30 信越半導体株式会社 発光素子の製造方法
US5958519A (en) * 1997-09-15 1999-09-28 National Science Council Method for forming oxide film on III-V substrate
US6618409B1 (en) 2000-05-03 2003-09-09 Corning Incorporated Passivation of semiconductor laser facets
US6599564B1 (en) 2000-08-09 2003-07-29 The Board Of Trustees Of The University Of Illinois Substrate independent distributed bragg reflector and formation method
US7438777B2 (en) * 2005-04-01 2008-10-21 North Carolina State University Lightweight high-tensile, high-tear strength bicomponent nonwoven fabrics

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2875384A (en) * 1956-12-06 1959-02-24 Rca Corp Semiconductor devices
US3260626A (en) * 1961-11-18 1966-07-12 Siemens Ag Method of producing an oxide coating on crystalline semiconductor bodies
US3725161A (en) * 1971-03-03 1973-04-03 A Kuper Oxidation of semiconductive alloys and products obtained thereby

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2875384A (en) * 1956-12-06 1959-02-24 Rca Corp Semiconductor devices
US3260626A (en) * 1961-11-18 1966-07-12 Siemens Ag Method of producing an oxide coating on crystalline semiconductor bodies
US3725161A (en) * 1971-03-03 1973-04-03 A Kuper Oxidation of semiconductive alloys and products obtained thereby

Also Published As

Publication number Publication date
US3914465A (en) 1975-10-21

Similar Documents

Publication Publication Date Title
JPS4959001A (en, 2012)
JPS4949186A (en, 2012)
JPS496956A (en, 2012)
JPS5320638B2 (en, 2012)
JPS4935462A (en, 2012)
JPS4916140U (en, 2012)
JPS5148874Y2 (en, 2012)
JPS499534A (en, 2012)
JPS5339008Y2 (en, 2012)
JPS4953666A (en, 2012)
JPS5327325Y2 (en, 2012)
JPS5127271Y2 (en, 2012)
JPS4932758B2 (en, 2012)
JPS49106418U (en, 2012)
JPS4977585U (en, 2012)
NL7316248A (en, 2012)
CH571797A5 (en, 2012)
CH570563A5 (en, 2012)
CH570477A5 (en, 2012)
CH570300A5 (en, 2012)
CH570196A5 (en, 2012)
CH603653A5 (en, 2012)
CH569801A5 (en, 2012)
CH574603A5 (en, 2012)
CH571262A5 (en, 2012)