USB287620I5 - - Google Patents

Info

Publication number
USB287620I5
USB287620I5 US287620DD USB287620I5 US B287620 I5 USB287620 I5 US B287620I5 US 287620D D US287620D D US 287620DD US B287620 I5 USB287620 I5 US B287620I5
Authority
US
United States
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of USB287620I5 publication Critical patent/USB287620I5/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording-members for original recording by exposure, e.g. to light, to heat or to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/087—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and being incorporated in an organic bonding material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/86—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO
    • H10D62/864—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/80—Electrical treatments, e.g. for electroforming

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
US287620D 1954-12-01 Pending USB287620I5 (en:Method)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US472354A US2876202A (en) 1954-12-01 1954-12-01 Photoconducting powders and method of preparation

Publications (1)

Publication Number Publication Date
USB287620I5 true USB287620I5 (en:Method)

Family

ID=23875178

Family Applications (2)

Application Number Title Priority Date Filing Date
US287620D Pending USB287620I5 (en:Method) 1954-12-01
US472354A Expired - Lifetime US2876202A (en) 1954-09-27 1954-12-01 Photoconducting powders and method of preparation

Family Applications After (1)

Application Number Title Priority Date Filing Date
US472354A Expired - Lifetime US2876202A (en) 1954-09-27 1954-12-01 Photoconducting powders and method of preparation

Country Status (1)

Country Link
US (2) US2876202A (en:Method)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2937353A (en) * 1959-02-27 1960-05-17 Sylvania Electric Prod Photoconductive devices
US3037941A (en) * 1959-07-15 1962-06-05 Thorn Electrical Ind Ltd Photoconductive materials
US2995474A (en) * 1959-10-02 1961-08-08 Eastman Kodak Co Photoconductive cadmium sulfide and method of preparation thereof
NL264488A (en:Method) * 1960-05-11
US3238150A (en) * 1962-09-12 1966-03-01 Xerox Corp Photoconductive cadmium sulfide powder and method for the preparation thereof
US3379527A (en) * 1963-09-18 1968-04-23 Xerox Corp Photoconductive insulators comprising activated sulfides, selenides, and sulfoselenides of cadmium
US3492718A (en) * 1966-08-15 1970-02-03 Matsushita Electric Industrial Co Ltd Method for preparing infrared quenching photoconductive material
DE1772555C3 (de) * 1967-06-08 1974-07-18 Canon K.K., Tokio Verfahren zur Herstellung von CdS oder CdSe zur Verwendung bei elektrophotographischen Verfahren
US3895943A (en) * 1967-06-08 1975-07-22 Canon Camera Co Method for the preparation of CdS or CdSe powder for electrophotography
JPS4910709B1 (en:Method) * 1968-03-08 1974-03-12
JPS505556B1 (en:Method) * 1969-05-15 1975-03-05

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2651700A (en) * 1951-11-24 1953-09-08 Francois F Gans Manufacturing process of cadmium sulfide, selenide, telluride photoconducting cells
BE543274A (en:Method) * 1954-12-03

Also Published As

Publication number Publication date
US2876202A (en) 1959-03-03

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