US9252257B2 - III-nitride semiconductor device with reduced electric field between gate and drain - Google Patents
III-nitride semiconductor device with reduced electric field between gate and drain Download PDFInfo
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- US9252257B2 US9252257B2 US14/332,589 US201414332589A US9252257B2 US 9252257 B2 US9252257 B2 US 9252257B2 US 201414332589 A US201414332589 A US 201414332589A US 9252257 B2 US9252257 B2 US 9252257B2
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 15
- 230000005684 electric field Effects 0.000 title claims abstract description 5
- 229910002704 AlGaN Inorganic materials 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 230000007704 transition Effects 0.000 claims description 3
- 238000000034 method Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 4
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
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- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910003465 moissanite Inorganic materials 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 230000005533 two-dimensional electron gas Effects 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
- H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/26—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys
- H01L29/267—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys in different semiconductor regions, e.g. heterojunctions
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/452—Ohmic electrodes on AIII-BV compounds
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
- H01L29/475—Schottky barrier electrodes on AIII-BV compounds
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
Definitions
- the present application relates to semiconductor devices and methods of fabrication of semiconductor devices.
- III-Nitride refers to a semiconductor alloy from the InAlGaN system, including, but not limited to, GaN, AlGaN, AIN, InGaN, InAlGaN and the like.
- a device To reduce the electric field between the gate electrode and the drain electrode, a device according to the present invention includes field plates each disposed between one or more pairs a gate electrode and a drain electrode, each field plate electrically shorted to the source electrode of the device.
- a III-Nitride power device is provided with a field plate over its heterojunction structure.
- the field plate may be comprised of a highly conductive III-Nitride body which is shorted to the source electrode of the device.
- a wide conductive plate is fabricated using any desired method, and then the wide plate is separated into thinner respective interleaved gate electrodes and field plates, for example, through an appropriate etching step, to obtain separated gate electrodes and field plates.
- FIG. 1 schematically illustrates a top plan view of two adjacently disposed active cells in a device according to the present invention.
- FIG. 2 schematically illustrates a cross-sectional view along line 2 - 2 viewed in the direction of the arrows.
- FIG. 3 schematically illustrates a top plan view of a device before the modification thereof using a process according to the present invention.
- FIG. 4 schematically illustrates a cross-sectional view of a second embodiment of the present invention.
- FIG. 5 schematically illustrates a cross-sectional view of two adjacent active cells of device according to a further embodiment of the present invention.
- FIGS. 6 and 7 schematically illustrate selected steps in a process for the fabrication of the device of FIG. 5 according to the present invention.
- FIG. 8 schematically illustrates a cross-sectional view of two adjacent cells of a device in accordance with the invention according to a further embodiment of the invention.
- FIG. 9 is like FIG. 8 and shows a still further embodiment of the invention.
- the device includes drain electrodes 10 , a source electrode 12 , gate electrodes 14 each disposed between source electrode 12 and a respective drain electrode 10 , and field plates 16 each disposed between a gate electrode 14 and a respective drain electrode 10 .
- All of electrodes 10 , 12 , 14 and field plate 16 may be of any desired conductive material deposited atop heterojunction 18 .
- source electrode 12 and field plates 16 are electrically shorted to one another as schematically illustrated by FIG. 1 .
- a device according to the present invention is preferably a III-Nitride power field effect device, such as a high electron mobility transistor (HEMT).
- a device according to the present invention thus includes the III-Nitride heterojunction 18 formed over a support body 20 .
- III-Nitride heterojunction 18 includes a first III-Nitride body 22 serving preferably as a channel layer, and a second III-Nitride body 24 serving as a barrier layer.
- the thickness and composition of first and second III-Nitride bodies 22 , 24 are selected to result in a conductive region at (or near) the heterojunction thereof, commonly referred to as a two-dimensional electron gas (2-DEG).
- 2-DEG two-dimensional electron gas
- first III-Nitride body 22 is comprised of GaN while second III-Nitride body 24 is comprised of AlGaN. Further, in the embodiment of FIGS. 1 , 2 and 3 , drain electrodes 10 and source electrode 12 make ohmic contact with second III-Nitride body 24 , while gate electrodes 14 and field plates 16 make a Schottky contact to second III-Nitride body 24 .
- support body 20 may include a substrate which is compatible with first III-Nitride body 22 (e.g. a GaN substrate) or may include a substrate comprised of silicon, SiC, Sapphire, or the like having a transition body or layer (e.g. an MN body) to allow for the growth thereon of first III-Nitride body 22 .
- a III-Nitride device is fabricated according to any suitable method to have wide gate electrodes 14 is formed between each drain electrode 10 and source electrode 12 . Thereafter, each wide gate electrode 14 is split or separated into two strips (using any desired and suitable etching technique, for example) to obtain field plates 16 and gate electrodes 14 as illustrated by FIG. 1 .
- gate electrodes 14 and field plates 16 are deposited over a gate insulation body 26 which is on body 24 and has a composition and thickness suitable to function as a gate dielectric.
- gate electrode 14 and field plate 16 may be capacitively coupled to body 24 , rather than being Schottky coupled to body 24 .
- a device includes the III-Nitride heterojunction 18 formed over a support body 20 .
- Heterojunction 18 includes the first III-Nitride body 22 formed over support body 20 , and second III-Nitride body 24 formed over first III-Nitride body 22 .
- the thickness and composition of first and second III-Nitride bodies 22 , 24 are selected to form a two-dimensional electron gas at (or near) the heterojunction thereof, as is well known in the art.
- first III-Nitride body 22 serves as the channel layer and may be composed of GaN
- second III-Nitride body 24 serves as the barrier layer and may be composed of AlGaN
- Support body 20 may be a substrate that is compatible with first III-Nitride body 22 , e.g. GaN, or may be a substrate (e.g. silicon, SiC or sapphire) that includes a transition layer (e.g. AlN) to allow for the growth thereon of first III-Nitride body 22 .
- first power electrode 12 e.g. source electrode
- second power electrode 10 e.g. drain electrode
- gate electrode 14 makes a Schottky contact with second III-Nitride body.
- a gate electrode 14 may be capacitively coupled to second III-Nitride body 24 (e.g. through a gate dielectric) without deviating from the scope and the spirit of the present invention.
- field plate 16 that is comprised of highly conductive (e.g. N+) III-Nitride material (e.g. GaN or AlGaN) is disposed over second III-Nitride body 24 and between a gate electrode 14 and drain electrode 10 .
- Field plates 16 are preferably electrically shorted to source electrode 12 , whereby the voltage between gate electrode 14 and drain electrode 10 is reduced to improve the breakdown voltage of the device.
- the short can be formed in any desired manner.
- each drain electrode 10 and source electrode 12 resides atop and is ohmically coupled to a respective highly conductive (e.g. N+) III-Nitride (e.g. GaN or AlGaN) pedestal 36 which is formed over second III-Nitride body 24 , whereby ohmic connection between the power electrodes 10 , 12 and second III-Nitride body 24 is improved.
- a respective highly conductive (e.g. N+) III-Nitride e.g. GaN or AlGaN
- the III-Nitride heterojunction 18 is formed over a support body 20 according to any suitable method. Thereafter, a highly conductive III-Nitride layer 38 (e.g. a layer of N+ GaN or N+AlGaN) is grown over second III-Nitride body 24 . Next, a layer of conductive material for forming power electrodes 10 , 12 is formed on second III-Nitride body 24 and patterned to obtain electrodes 10 and 12 .
- a highly conductive III-Nitride layer 38 e.g. a layer of N+ GaN or N+AlGaN
- a layer of conductive material for forming power electrodes 10 , 12 is formed on second III-Nitride body 24 and patterned to obtain electrodes 10 and 12 .
- Layer 38 is then patterned to include a plurality of gaps 40 , 41 ( FIG. 7 ) in order to obtain or define field plates 16 and pedestals 36 .
- gaps 40 and 41 serve to physically isolated field plates 16 and pedestals 36 .
- gate electrodes 14 are formed in gaps 41 of FIG. 7 on second III-Nitride body 24 , and field plates 16 and source electrode 12 are electrically shorted to obtain a device according to the present invention.
- the device is an enhancement mode device and field plates 16 may be any conductive material including metallic materials as well as a highly conductive III-Nitride laser or body as described above.
- An enhancement mode device includes a 2-DEG layer having an interrupted region or a region of reduced carrier density 50 under gate electrode 14 .
- a recess may be formed in the body 24
- an implanted region may be formed in either body 24 or 22
- the surface of body 24 may be treated using CF4 under the gate, or local decomposition as set forth in U.S. application Ser. No.
- a gate dielectric 26 may be disposed between the gate electrodes 14 and body 24 .
- dielectric body 26 may be disposed between field plates 16 and body 24 .
- pedestals 26 may be omitted without deviating from the scope and the spirit of the present invention.
- electrodes 14 and 16 may be coupled ohmically to body 16 .
Abstract
Description
Claims (9)
Priority Applications (1)
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US14/332,589 US9252257B2 (en) | 2007-09-18 | 2014-07-16 | III-nitride semiconductor device with reduced electric field between gate and drain |
Applications Claiming Priority (4)
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US97329507P | 2007-09-18 | 2007-09-18 | |
US97336707P | 2007-09-18 | 2007-09-18 | |
US12/211,120 US8791503B2 (en) | 2007-09-18 | 2008-09-16 | III-nitride semiconductor device with reduced electric field between gate and drain and process for its manufacture |
US14/332,589 US9252257B2 (en) | 2007-09-18 | 2014-07-16 | III-nitride semiconductor device with reduced electric field between gate and drain |
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US12/211,120 Continuation US8791503B2 (en) | 2007-09-18 | 2008-09-16 | III-nitride semiconductor device with reduced electric field between gate and drain and process for its manufacture |
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US20150021619A1 US20150021619A1 (en) | 2015-01-22 |
US9252257B2 true US9252257B2 (en) | 2016-02-02 |
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US12/211,120 Active 2031-10-17 US8791503B2 (en) | 2007-09-18 | 2008-09-16 | III-nitride semiconductor device with reduced electric field between gate and drain and process for its manufacture |
US14/332,292 Active US9252256B2 (en) | 2007-09-18 | 2014-07-15 | III-nitride semiconductor device with reduced electric field |
US14/332,589 Expired - Fee Related US9252257B2 (en) | 2007-09-18 | 2014-07-16 | III-nitride semiconductor device with reduced electric field between gate and drain |
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US12/211,120 Active 2031-10-17 US8791503B2 (en) | 2007-09-18 | 2008-09-16 | III-nitride semiconductor device with reduced electric field between gate and drain and process for its manufacture |
US14/332,292 Active US9252256B2 (en) | 2007-09-18 | 2014-07-15 | III-nitride semiconductor device with reduced electric field |
Country Status (4)
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US (3) | US8791503B2 (en) |
JP (1) | JP5427168B2 (en) |
DE (1) | DE112008001039B4 (en) |
WO (1) | WO2009038717A1 (en) |
Families Citing this family (19)
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US8455920B2 (en) * | 2007-05-23 | 2013-06-04 | International Rectifier Corporation | III-nitride heterojunction device |
US8791503B2 (en) | 2007-09-18 | 2014-07-29 | International Rectifier Corporation | III-nitride semiconductor device with reduced electric field between gate and drain and process for its manufacture |
US9219058B2 (en) * | 2010-03-01 | 2015-12-22 | Infineon Technologies Americas Corp. | Efficient high voltage switching circuits and monolithic integration of same |
US8981380B2 (en) * | 2010-03-01 | 2015-03-17 | International Rectifier Corporation | Monolithic integration of silicon and group III-V devices |
DE102010016993A1 (en) | 2010-05-18 | 2011-11-24 | United Monolithic Semiconductors Gmbh | Semiconductor device |
JP5742159B2 (en) * | 2010-10-05 | 2015-07-01 | サンケン電気株式会社 | Semiconductor device |
US8957454B2 (en) | 2011-03-03 | 2015-02-17 | International Rectifier Corporation | III-Nitride semiconductor structures with strain absorbing interlayer transition modules |
US8482036B2 (en) * | 2011-04-20 | 2013-07-09 | Infineon Technologies Austria Ag | Lateral high electron mobility transistor |
US8546849B2 (en) | 2011-05-04 | 2013-10-01 | International Rectifier Corporation | High voltage cascoded III-nitride rectifier package utilizing clips on package surface |
US8796738B2 (en) | 2011-09-21 | 2014-08-05 | International Rectifier Corporation | Group III-V device structure having a selectively reduced impurity concentration |
KR20140070663A (en) * | 2011-10-11 | 2014-06-10 | 메사추세츠 인스티튜트 오브 테크놀로지 | Semiconductor devices having a recessed electrode structure |
US9087718B2 (en) * | 2013-03-13 | 2015-07-21 | Transphorm Inc. | Enhancement-mode III-nitride devices |
KR101559111B1 (en) | 2014-04-10 | 2015-10-13 | 홍익대학교 산학협력단 | Bi-direction switching device and manufacturing method for the same |
JP6478395B2 (en) * | 2015-03-06 | 2019-03-06 | 住友電工デバイス・イノベーション株式会社 | Semiconductor device |
JP6299665B2 (en) * | 2015-04-30 | 2018-03-28 | 三菱電機株式会社 | Field effect transistor |
US9837522B2 (en) * | 2015-11-02 | 2017-12-05 | Infineon Technologies Austria Ag | III-nitride bidirectional device |
US11575036B2 (en) * | 2017-09-28 | 2023-02-07 | Intel Corporation | Gallium nitride transistors with source and drain field plates and their methods of fabrication |
US11316019B2 (en) * | 2020-07-29 | 2022-04-26 | Globalfoundries U.S. Inc. | Symmetric arrangement of field plates in semiconductor devices |
WO2024030127A1 (en) * | 2022-08-03 | 2024-02-08 | Vishay Siliconix Llc | P-gan high electron mobility transistor field plating |
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RU2232464C2 (en) * | 2002-08-22 | 2004-07-10 | Бобков Михаил Николаевич | Method for suppressing narrow-band noise in broadband communication system |
JP4810072B2 (en) | 2004-06-15 | 2011-11-09 | 株式会社東芝 | Nitrogen compound-containing semiconductor devices |
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US7821030B2 (en) * | 2005-03-02 | 2010-10-26 | Panasonic Corporation | Semiconductor device and method for manufacturing the same |
US8791503B2 (en) | 2007-09-18 | 2014-07-29 | International Rectifier Corporation | III-nitride semiconductor device with reduced electric field between gate and drain and process for its manufacture |
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2008
- 2008-09-16 US US12/211,120 patent/US8791503B2/en active Active
- 2008-09-17 DE DE112008001039.0T patent/DE112008001039B4/en active Active
- 2008-09-17 WO PCT/US2008/010812 patent/WO2009038717A1/en active Application Filing
- 2008-09-17 JP JP2010501026A patent/JP5427168B2/en active Active
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2014
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JP2000277724A (en) | 1999-03-26 | 2000-10-06 | Nagoya Kogyo Univ | Field-effect transistor and semiconductor device equipped with the same and manufacture of the same |
US20060145189A1 (en) * | 2004-12-30 | 2006-07-06 | Robert Beach | III-nitride power semiconductor with a field relaxation feature |
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Also Published As
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US20090072273A1 (en) | 2009-03-19 |
US9252256B2 (en) | 2016-02-02 |
US20150014701A1 (en) | 2015-01-15 |
JP5427168B2 (en) | 2014-02-26 |
WO2009038717A1 (en) | 2009-03-26 |
JP2010522993A (en) | 2010-07-08 |
US8791503B2 (en) | 2014-07-29 |
US20150021619A1 (en) | 2015-01-22 |
DE112008001039T5 (en) | 2010-03-04 |
DE112008001039B4 (en) | 2019-05-16 |
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