US9251979B2 - Techniques for fabricating Janus sensors - Google Patents
Techniques for fabricating Janus sensors Download PDFInfo
- Publication number
- US9251979B2 US9251979B2 US14/010,945 US201314010945A US9251979B2 US 9251979 B2 US9251979 B2 US 9251979B2 US 201314010945 A US201314010945 A US 201314010945A US 9251979 B2 US9251979 B2 US 9251979B2
- Authority
- US
- United States
- Prior art keywords
- janus
- micro
- fluidic channel
- fluid
- oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related, expires
Links
- 238000000034 method Methods 0.000 title abstract description 38
- 239000012530 fluid Substances 0.000 claims abstract description 66
- 239000012777 electrically insulating material Substances 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 239000004020 conductor Substances 0.000 claims abstract description 10
- 239000013283 Janus particle Substances 0.000 claims description 36
- 239000003989 dielectric material Substances 0.000 claims description 34
- 229910052751 metal Inorganic materials 0.000 claims description 21
- 239000002184 metal Substances 0.000 claims description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 15
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 14
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 10
- 239000010931 gold Substances 0.000 claims description 10
- SZVJSHCCFOBDDC-UHFFFAOYSA-N ferrosoferric oxide Chemical compound O=[Fe]O[Fe]O[Fe]=O SZVJSHCCFOBDDC-UHFFFAOYSA-N 0.000 claims description 8
- 150000002739 metals Chemical class 0.000 claims description 8
- 239000010949 copper Substances 0.000 claims description 7
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 229910001935 vanadium oxide Inorganic materials 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 239000000395 magnesium oxide Substances 0.000 claims description 4
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 4
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- LIKBJVNGSGBSGK-UHFFFAOYSA-N iron(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Fe+3].[Fe+3] LIKBJVNGSGBSGK-UHFFFAOYSA-N 0.000 claims description 2
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 229910001887 tin oxide Inorganic materials 0.000 claims description 2
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 claims 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 claims 1
- 229910001930 tungsten oxide Inorganic materials 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 239000000463 material Substances 0.000 description 30
- 238000010586 diagram Methods 0.000 description 23
- 239000007789 gas Substances 0.000 description 18
- 230000008859 change Effects 0.000 description 13
- 230000001960 triggered effect Effects 0.000 description 13
- 239000002245 particle Substances 0.000 description 12
- 230000008569 process Effects 0.000 description 12
- 230000035945 sensitivity Effects 0.000 description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 11
- RAHZWNYVWXNFOC-UHFFFAOYSA-N Sulphur dioxide Chemical compound O=S=O RAHZWNYVWXNFOC-UHFFFAOYSA-N 0.000 description 10
- 238000005530 etching Methods 0.000 description 10
- 239000000126 substance Substances 0.000 description 7
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 239000002253 acid Substances 0.000 description 6
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 5
- 239000002585 base Substances 0.000 description 5
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 5
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 101100460147 Sarcophaga bullata NEMS gene Proteins 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 3
- 229910000037 hydrogen sulfide Inorganic materials 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 230000007935 neutral effect Effects 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- DZKDPOPGYFUOGI-UHFFFAOYSA-N tungsten(iv) oxide Chemical compound O=[W]=O DZKDPOPGYFUOGI-UHFFFAOYSA-N 0.000 description 2
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000003929 acidic solution Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 239000003637 basic solution Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229920001400 block copolymer Polymers 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- GNTDGMZSJNCJKK-UHFFFAOYSA-N divanadium pentaoxide Chemical compound O=[V](=O)O[V](=O)=O GNTDGMZSJNCJKK-UHFFFAOYSA-N 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- -1 i.e. Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000005191 phase separation Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000001338 self-assembly Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H29/00—Switches having at least one liquid contact
- H01H29/02—Details
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N15/00—Investigating characteristics of particles; Investigating permeability, pore-volume, or surface-area of porous materials
- G01N15/10—Investigating individual particles
- G01N15/1031—Investigating individual particles by measuring electrical or magnetic effects thereof, e.g. conductivity or capacity
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
- G01N33/0004—Gaseous mixtures, e.g. polluted air
- G01N33/0009—General constructional details of gas analysers, e.g. portable test equipment
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/28—Electrolytic cell components
- G01N27/30—Electrodes, e.g. test electrodes; Half-cells
- G01N27/327—Biochemical electrodes, e.g. electrical or mechanical details for in vitro measurements
- G01N27/3275—Sensing specific biomolecules, e.g. nucleic acid strands, based on an electrode surface reaction
- G01N27/3278—Sensing specific biomolecules, e.g. nucleic acid strands, based on an electrode surface reaction involving nanosized elements, e.g. nanogaps or nanoparticles
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/404—Cells with anode, cathode and cell electrolyte on the same side of a permeable membrane which separates them from the sample fluid, e.g. Clark-type oxygen sensors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/416—Systems
- G01N27/447—Systems using electrophoresis
- G01N27/44756—Apparatus specially adapted therefor
- G01N27/44795—Isoelectric focusing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
Abstract
Description
-
- For pH above isoelectric point:
M-OH+OH−→M-O−+H2O - For pH below isoelectric point:
M-OH+H+→M-OH2 +
- For pH above isoelectric point:
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/010,945 US9251979B2 (en) | 2013-05-02 | 2013-08-27 | Techniques for fabricating Janus sensors |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/875,394 US9251978B2 (en) | 2013-05-02 | 2013-05-02 | Techniques for fabricating Janus sensors |
US14/010,945 US9251979B2 (en) | 2013-05-02 | 2013-08-27 | Techniques for fabricating Janus sensors |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/875,394 Continuation US9251978B2 (en) | 2013-05-02 | 2013-05-02 | Techniques for fabricating Janus sensors |
Publications (2)
Publication Number | Publication Date |
---|---|
US20140326047A1 US20140326047A1 (en) | 2014-11-06 |
US9251979B2 true US9251979B2 (en) | 2016-02-02 |
Family
ID=51840699
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/875,394 Expired - Fee Related US9251978B2 (en) | 2013-05-02 | 2013-05-02 | Techniques for fabricating Janus sensors |
US14/010,945 Expired - Fee Related US9251979B2 (en) | 2013-05-02 | 2013-08-27 | Techniques for fabricating Janus sensors |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/875,394 Expired - Fee Related US9251978B2 (en) | 2013-05-02 | 2013-05-02 | Techniques for fabricating Janus sensors |
Country Status (1)
Country | Link |
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US (2) | US9251978B2 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109085224B (en) * | 2018-08-27 | 2023-11-03 | 浙江大学 | Sensitive microelectrode for ATP detection in cell surface area |
CN109370549B (en) * | 2018-09-07 | 2020-09-01 | 中国石油大学(北京) | Super-amphiphobic Janus particle of silicon dioxide suitable for chip carrying agent for oil-based drilling fluid and preparation method and application thereof |
Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4671852A (en) * | 1986-05-07 | 1987-06-09 | The Standard Oil Company | Method of forming suspended gate, chemically sensitive field-effect transistor |
US5690808A (en) | 1996-01-25 | 1997-11-25 | Teledyne Industries, Inc. | Electrochemical gas sensors and methods for sensing electrochemical active gases in gas mixtures |
US6222513B1 (en) * | 1998-03-10 | 2001-04-24 | Xerox Corporation | Charge retention islands for electric paper and applications thereof |
US6423209B1 (en) | 2000-10-13 | 2002-07-23 | Advanced Technology Materials, Inc. | Acid gas measuring sensors and method of using same |
US20020135558A1 (en) * | 2001-01-26 | 2002-09-26 | Richley Edward A. | Rotation and threshold mechanism for twisting ball display |
US20050072690A1 (en) | 2002-05-21 | 2005-04-07 | Fyles Thomas Murray | Ion exchange membranes and dissolved gas sensors |
US20060193730A1 (en) | 2005-02-25 | 2006-08-31 | Jacob Rosenstein | Method and apparatus for controlling microfluidic flow |
US7309415B2 (en) | 2001-02-10 | 2007-12-18 | Robert Bosch Gmbh | Gas sensor and method for measuring a gas component in a gas mixture |
US20080009002A1 (en) | 2004-11-09 | 2008-01-10 | The Regents Of The University Of California | Analyte Identification Using Electronic Devices |
US20090256215A1 (en) | 2005-03-18 | 2009-10-15 | Nano-Proprietary, Inc. | Gated metal oxide sensor |
US20110297541A1 (en) | 2008-06-12 | 2011-12-08 | Jayatissa Ahalapitiya H | Chlorine gas sensing system |
US8614136B1 (en) * | 2012-10-31 | 2013-12-24 | International Business Machines Corporation | Techniques for fabricating janus MEMS transistors |
-
2013
- 2013-05-02 US US13/875,394 patent/US9251978B2/en not_active Expired - Fee Related
- 2013-08-27 US US14/010,945 patent/US9251979B2/en not_active Expired - Fee Related
Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4671852A (en) * | 1986-05-07 | 1987-06-09 | The Standard Oil Company | Method of forming suspended gate, chemically sensitive field-effect transistor |
US5690808A (en) | 1996-01-25 | 1997-11-25 | Teledyne Industries, Inc. | Electrochemical gas sensors and methods for sensing electrochemical active gases in gas mixtures |
US6222513B1 (en) * | 1998-03-10 | 2001-04-24 | Xerox Corporation | Charge retention islands for electric paper and applications thereof |
US6423209B1 (en) | 2000-10-13 | 2002-07-23 | Advanced Technology Materials, Inc. | Acid gas measuring sensors and method of using same |
US20020135558A1 (en) * | 2001-01-26 | 2002-09-26 | Richley Edward A. | Rotation and threshold mechanism for twisting ball display |
US7309415B2 (en) | 2001-02-10 | 2007-12-18 | Robert Bosch Gmbh | Gas sensor and method for measuring a gas component in a gas mixture |
US20050072690A1 (en) | 2002-05-21 | 2005-04-07 | Fyles Thomas Murray | Ion exchange membranes and dissolved gas sensors |
US20080009002A1 (en) | 2004-11-09 | 2008-01-10 | The Regents Of The University Of California | Analyte Identification Using Electronic Devices |
US20060193730A1 (en) | 2005-02-25 | 2006-08-31 | Jacob Rosenstein | Method and apparatus for controlling microfluidic flow |
US20090256215A1 (en) | 2005-03-18 | 2009-10-15 | Nano-Proprietary, Inc. | Gated metal oxide sensor |
US20110297541A1 (en) | 2008-06-12 | 2011-12-08 | Jayatissa Ahalapitiya H | Chlorine gas sensing system |
US8614136B1 (en) * | 2012-10-31 | 2013-12-24 | International Business Machines Corporation | Techniques for fabricating janus MEMS transistors |
Non-Patent Citations (1)
Title |
---|
Lattuada et al., "Synthesis, properties and applications of Janus nanoparticles," nanotoday, vol. 6, Issue 3, Jun. 2011, pp. 286-308. |
Also Published As
Publication number | Publication date |
---|---|
US9251978B2 (en) | 2016-02-02 |
US20140326047A1 (en) | 2014-11-06 |
US20140326613A1 (en) | 2014-11-06 |
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