US9190368B2 - Semiconductor device that attenuates high-frequency oscillation - Google Patents

Semiconductor device that attenuates high-frequency oscillation Download PDF

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US9190368B2
US9190368B2 US14/017,226 US201314017226A US9190368B2 US 9190368 B2 US9190368 B2 US 9190368B2 US 201314017226 A US201314017226 A US 201314017226A US 9190368 B2 US9190368 B2 US 9190368B2
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electrode plate
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semiconductor
semiconductor device
semiconductor element
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Yoko Sakiyama
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Toshiba Corp
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    • H10W72/00—Interconnections or connectors in packages
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    • H10W72/019—Manufacture or treatment of bond pads
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    • H01L2224/04042—
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    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
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    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H10W44/203—Electrical connections
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
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    • H10W72/00—Interconnections or connectors in packages
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    • H10W72/5445—Dispositions of bond wires being orthogonal to a side surface of the chip, e.g. parallel arrangements
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    • H10W72/874—On different surfaces
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    • H10W90/00—Package configurations
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    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
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    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/753—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips
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    • H10W90/00—Package configurations
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    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Definitions

  • Embodiments described herein relate generally to a semiconductor device.
  • an oscillation of the semiconductor device can be suppressed by reducing a parasitic inductance or a parasitic resistance of a bonding wire connecting the semiconductor chips.
  • a malfunction may occur when a voltage that exceeds a gate breakdown voltage or a breakdown voltage between main electrodes is applied to the semiconductor device.
  • FIG. 1 is a plan view schematically showing a structure of a semiconductor device according to a first embodiment.
  • FIG. 2 is a circuit diagram showing part of the semiconductor device according to the first embodiment.
  • FIG. 3 is a plan view schematically showing a structure of a semiconductor device according to a comparative example.
  • FIG. 4 is a plan view schematically showing a modified example of a semiconductor device according to the first embodiment.
  • FIG. 5 is a plan view schematically showing another modified example of a semiconductor device according to the first embodiment.
  • FIG. 6 is a plan view schematically showing a structure of a semiconductor device according to a second embodiment.
  • a semiconductor device that includes a plurality of semiconductor chips and can attenuate oscillation promptly is described.
  • a semiconductor device includes an insulating substrate, a first electrode plate disposed on the insulating substrate, a second electrode plate disposed on the insulating substrate, a third electrode plate disposed on the insulating substrate, a first semiconductor element disposed on the first electrode plate, a first electrode of the first semiconductor element being electrically connected to the first electrode plate, a second semiconductor element disposed on the second electrode plate, a first electrode of the second semiconductor element being electrically connected to the second electrode plate, a first bonding wire electrically connecting a second electrode of the first semiconductor element to the third electrode plate, and a second bonding wire electrically connecting a second electrode of the second semiconductor element to the third electrode plate.
  • FIG. 1 is a plan view schematically showing a structure of a semiconductor device according to a first embodiment.
  • the semiconductor device of FIG. 1 includes an insulating substrate 1 , first main electrode plates 2 a and 2 b , second main electrode plates 3 a and 3 b , a third main electrode plate 4 , control electrode plates 5 a and 5 b , insulated gate bipolar transistor (IGBT) chips 11 a and 11 b (first semiconductor chips), diode chips 12 a and 12 b (second semiconductor chips), first terminals 13 a and 13 b , second terminals 14 a and 14 b , a third terminal 15 , first bonding wires 21 a and 21 b , second bonding wires 22 a and 22 b , and third bonding wires 23 a and 23 b.
  • IGBT insulated gate bipolar transistor
  • the insulating substrate 1 is, for example, an aluminum oxide substrate.
  • FIG. 1 an X direction and a Y direction that are parallel to a principal surface of the insulating substrate 1 and are perpendicular to each other and a Z direction that is perpendicular to the principal surface of the insulating substrate 1 are shown.
  • the IGBT chips 11 a and 11 b are provided on the first main electrode plates 2 a and 2 b , respectively.
  • the first main electrode plates 2 a and 2 b are provided on the insulating substrate 1 and are electrically connected to collectors of the IGBT chips 11 a and 11 b , respectively.
  • the diode chips 12 a and 12 b are provided on the second main electrode plates 3 a and 3 b , respectively.
  • the second main electrode plates 3 a and 3 b are provided on the insulating substrate 1 and are electrically connected to cathodes of the diode chips 12 a and 12 b , respectively.
  • the third main electrode plate 4 is provided on the insulating substrate 1 .
  • the third main electrode plate 4 is electrically connected to emitters of the IGBT chips 11 a and 11 b with the first bonding wires 21 a and 21 b , respectively, and is electrically connected to anodes of the diode chips 12 a and 12 b with the second bonding wires 22 a and 22 b , respectively.
  • the control electrode plates 5 a and 5 b are provided on the insulating substrate 1 .
  • the control electrode plates 5 a and 5 b are electrically connected to the gates of the IGBT chips 11 a and 11 b with the third bonding wires 23 a and 23 b , respectively.
  • the first main electrode plates 2 a and 2 b , the second main electrode plates 3 a and 3 b , the third main electrode plate 4 , and the control electrode plates 5 a and 5 b are, for example, Cu (copper) foil.
  • the first terminals 13 a and 13 b are provided on surfaces of the first main electrode plates 2 a and 2 b , respectively.
  • the second terminals 14 a and 14 b are provided on surfaces of the second main electrode plates 3 a and 3 b , respectively.
  • the third terminal 15 is provided on a surface of the third main electrode plate 4 .
  • the IGBT chips 11 a and 11 b and the diode chips 12 a and 12 b are connected in parallel.
  • FIG. 2 is a circuit diagram showing a part of the semiconductor device according to the first embodiment.
  • FIG. 2 shows a state in which the IGBT chip 11 a and the diode chip 12 a are connected in parallel.
  • FIG. 3 is a plan view schematically showing a structure of a semiconductor device according to the comparative example.
  • the IGBT chips 11 a and 11 b and the diode chips 12 a and 12 b are provided on one main electrode plate 2 .
  • the IGBT chips 11 a and 11 b and the diode chips 12 a and 12 b are provided on the main electrode plates 2 a , 2 b , 3 a , and 3 b , respectively.
  • the first terminals 13 a and 13 b and the second terminals 14 a and 14 b are connected with the wiring line.
  • a resistance component and an inductance component of this wiring line are added to the paths between these semiconductor chips 11 a - 12 b.
  • the IGBT chip 11 a and the diode chip 12 a are directly connected to each other with the bonding wire 21 a
  • the IGBT chip 11 b and the diode chip 12 b are directly connected to each other with the bonding wire 21 b
  • the semiconductor chips 11 a - 12 b are connected with the bonding wires 21 a - 22 b via the third main electrode plate 4 .
  • a resistance component and an inductance component of the third main electrode plate 4 are added to the paths between these semiconductor chips 11 a - 12 b.
  • an R component (resistance component) added to an LC circuit has an effect of decreasing an amplitude of oscillation and accelerating attenuation of the oscillation. Therefore, according to this embodiment, with the resistance component added in the above-described manner, the oscillation generated between the IGBT chips, between the diode chips, and between the IGBT chip and the diode chip can be attenuated promptly.
  • resistances between each of the semiconductor chips 11 a - 12 b and each of the terminals 13 a - 15 of this embodiment is nearly equal to the resistances in the comparative example.
  • a resistance component and an inductance component can be added to the paths between the semiconductor chips 11 a - 12 b without increasing resistance between each of the semiconductor chips 11 a - 12 b and each of the terminals 13 a - 15 .
  • a line L denotes a center line between the IGBT chips 11 a and 11 b and between the diode chips 12 a and 12 b .
  • a pair of the IGBT chips 11 a and 11 b , a pair of the diode chips 12 a and 12 b , a pair of the first main electrode plates 2 a and 2 b , a pair of the second main electrode plates 3 a and 3 b , a pair of the control electrode plates 5 a and 5 b , a pair of the first terminals 13 a and 13 b , and a pair of the second terminals 14 a and 14 b are arranged in such a way as to be symmetric with respect to the center line L.
  • Such an arrangement according to this embodiment has an advantage that application of a high voltage is not likely to be applied only to one of the IGBT chips, because a resistance component and an inductance component added to the IGBT chips 11 a and 11 b can be uniform.
  • each of the above-described pairs may be arranged asymmetrically with respect to the center line L.
  • the center line between the IGBT chips 11 a and 11 b may not be the same as the center line between the diode chips 12 a and 12 b.
  • the third main electrode plate 4 and the third terminal 15 are both arranged symmetrically with respect to the center line L.
  • a high voltage is not likely to be applied only to one of the IGBT chips (the same goes for the diode chips).
  • the first terminals 13 a and 13 b are between the IGBT chips 11 a and 11 b
  • the second terminals 14 a and 14 b are between the diode chips 12 a and 12 b .
  • Such an arrangement according to this embodiment has an advantage that the first terminals 13 a and 13 b and the second terminals 14 a and 14 b can be connected by a short wiring line.
  • the third main electrode plate 4 is between the IGBT chips 11 a and 11 b and the diode chips 12 a and 12 b .
  • Such an arrangement according to this embodiment has an advantage that, for example, the third main electrode plate 4 can be easily connected to all of the IGBT chips 11 a and 11 b and the diode chips 12 a and 12 b.
  • control electrode plates 5 a and 5 b are arranged on the respective sides of the IGBT chips 11 a and 11 b opposite from the third main electrode plate 4 .
  • the semiconductor device of this embodiment may include a plurality of third main electrode plates 4 a and 4 b and a plurality of third terminals 15 a and 15 b .
  • FIG. 4 is a plan view schematically showing a modified example of a semiconductor device according to the first embodiment.
  • the third main electrode plate 4 a is electrically connected to the IGBT chip 11 a and the diode chip 12 a
  • the third main electrode plate 4 b is electrically connected to the IGBT chip 11 b and the diode chip 12 b
  • the semiconductor chips 11 a - 12 b are connected in parallel.
  • a pair of the third main electrode plates 4 a and 4 b and a pair of the third terminals 15 a and 15 b are arranged symmetrically with respect to the center line L.
  • the IGBT chips 11 a and 11 b and the diode chips 12 a and 12 b may be formed with the same substrate or may be formed with different substrates.
  • the IGBT chips 11 a and 11 b may be formed with a Si (silicon) substrate
  • the diode chips 12 a and 12 b may be formed with a SiC (silicon carbide) substrate.
  • a structure of FIG. 5 may be adopted.
  • FIG. 5 is a plan view schematically showing a modified example of a semiconductor device according to the first embodiment.
  • the first terminals 13 a and 13 b are between the IGBT chips 11 a and 11 b
  • the diode chips 12 a and 12 b are between the second terminals 14 a and 14 b .
  • the first terminals 13 a and 13 b are located near each other, and the second terminals 14 a and 14 b are located away from each other.
  • FIG. 5 schematically depicts a first wiring line W 1 that electrically connects the first terminals 13 a and 13 b and a second wiring line W 2 that electrically connects the second terminals 14 a and 14 b .
  • the second wiring line W 2 is longer than the first wiring line W 1 .
  • the SiC substrate can reduce electric resistivity while maintaining high avalanche field intensity compared to the Si substrate, the SiC substrate has an advantage that, for example, a terminal end area of a device can be shortened. Moreover, the SiC substrate also has an advantage that the melting point of the SiC substrate is higher than the melting point of the Si substrate. However, when the SiC substrate is adopted, the resistance of the semiconductor chip is decreased, which will allow greater oscillation to occur between the diode chips 12 a and 12 b.
  • the resistance and the inductance of the second wiring line W 2 are set to be greater than the resistance and the inductance of the first wiring line W 1 by making the second wiring line W 2 longer than the first wiring line W 1 .
  • the oscillation between the diode chips 12 a and 12 b can be attenuated promptly.
  • the resonance frequency of the semiconductor device can be varied greatly by the inductance of the second wiring line W 2 .
  • the second wiring line W 2 of this modified example is longer than 2 ⁇ + ⁇ .
  • the diode chips 12 a and 12 b may be formed on a SiC substrate.
  • one or more of the IGBT chips 11 a and 11 b and the diode chips 12 a and 12 b may be formed on a SiC substrate, and the remaining chips may be formed of a different substrate (for example, a Si substrate).
  • the SiC substrate is an example of a substrate containing silicon and carbon.
  • the first semiconductor chips 11 a and 11 b and the second semiconductor chips 12 a and 12 b are provided on the first main electrode plates 2 a and 2 b and the second main electrode plates 3 a and 3 b , respectively, and these semiconductor chips 11 a - 12 b are electrically connected to the third main electrode plate 4 . Therefore, according to this embodiment, the oscillation of the semiconductor device including the plurality of semiconductor chips 11 a - 12 b can be attenuated promptly.
  • FIG. 6 is a plan view schematically showing a structure of a semiconductor device according to a second embodiment.
  • the first main electrode plates 2 a and 2 b are provided for the IGBT chips 11 a and 11 b , respectively, and the second main electrode plates 3 a and 3 b are provided for the diode chips 12 a and 12 b , respectively. Therefore, in FIG. 1 , there is a one-to-one correspondence between the first main electrode plates 2 a and 2 b and the IGBT chips 11 a and 11 b , and there is a one-to-one correspondence between the second main electrode plates 3 a and 3 b and the diode chips 12 a and 12 b.
  • a plurality of IGBT chips 11 a and 11 b are provided on a single first main electrode plate 2
  • a plurality of diode chips 12 a and 12 b are provided on a single second main electrode plate 3 .
  • a first terminal 13 shared by the IGBT chips 11 a and 11 b is provided on the first main electrode plate 2
  • a second terminal 14 shared by the diode chips 12 a and 12 b is provided on the second main electrode plate 3 .
  • the first terminal 13 is arranged on the center line L between the IGBT chips 11 a and 11 b and is arranged symmetrically with respect to the center line L.
  • the second terminal 14 is arranged on the center line L between the diode chips 12 a and 12 b and is arranged symmetrically with respect to the center line L.
  • the IGBT chips 11 a and 11 b and the diode chips 12 a and 12 b are connected in parallel.
  • the semiconductor device according to the second embodiment has an advantage that, for example, an area of the insulating substrate 1 can be reduced more easily as compared to the semiconductor device according to the first embodiment.
  • the IGBT chips 11 a and 11 b are directly connected to each other with the first main electrode plate 2
  • the diode chips 12 a and 12 b are directly connected to each other with the second main electrode plate 3 . Therefore, the structure of the second embodiment is effective when, for example, the oscillation between the IGBT chips 11 a and 11 b and the oscillation between the diode chips 12 a and 12 b are not so significant compared to the oscillation between the IGBT chips 11 a and 11 b and the diode chips 12 a and 12 b.
  • the IGBT chip 11 a and the diode chip 12 a may be provided on the first main electrode plate 2
  • the IGBT chip 11 b and the diode chip 12 b may be provided on the second main electrode plate 3 .
  • the IGBT chip 11 a and the diode chip 12 a are examples of the first semiconductor chip
  • the IGBT chip 11 b and the diode chip 12 b are examples of the second semiconductor chip.
  • the semiconductor device of the first or second embodiment may include three or more IGBT chips 11 and three or more diode chips 12 on the same insulating substrate 1 or may include only one IGBT chip 11 and only one diode chip 12 on the same insulating substrate 1 .

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Abstract

According to embodiments, a semiconductor device includes an insulating substrate, a first electrode plate disposed on the insulating substrate, a second electrode plate disposed on the insulating substrate, a third electrode plate disposed on the insulating substrate, a first semiconductor element disposed on the first electrode plate, a first electrode of the first semiconductor element being electrically connected to the first electrode plate, a second semiconductor element disposed on the second electrode plate, a first electrode of the second semiconductor element being electrically connected to the second electrode plate, a first bonding wire electrically connecting a second electrode of the first semiconductor element to the third electrode plate, and a second bonding wire electrically connecting a second electrode of the second semiconductor element to the third electrode plate.

Description

CROSS-REFERENCE TO RELATED APPLICATION
This application is based upon and claims the benefit of priority from Japanese Patent Application No. 2013-060756, filed Mar. 22, 2013, the entire contents of which are incorporated herein by reference.
FIELD
Embodiments described herein relate generally to a semiconductor device.
BACKGROUND
In a semiconductor device in which a plurality of semiconductor chips are connected in parallel, an oscillation of the semiconductor device can be suppressed by reducing a parasitic inductance or a parasitic resistance of a bonding wire connecting the semiconductor chips. However, when the parasitic inductance of the bonding wire is reduced, a high-frequency oscillation may be generated, where a frequency ω satisfying a resonance condition is represented as ω=(LC)−1/2 (L and C represent the inductance and the capacitance of the semiconductor device, respectively). In the semiconductor device having such a high-frequency oscillation, a malfunction may occur when a voltage that exceeds a gate breakdown voltage or a breakdown voltage between main electrodes is applied to the semiconductor device.
DESCRIPTION OF THE DRAWINGS
FIG. 1 is a plan view schematically showing a structure of a semiconductor device according to a first embodiment.
FIG. 2 is a circuit diagram showing part of the semiconductor device according to the first embodiment.
FIG. 3 is a plan view schematically showing a structure of a semiconductor device according to a comparative example.
FIG. 4 is a plan view schematically showing a modified example of a semiconductor device according to the first embodiment.
FIG. 5 is a plan view schematically showing another modified example of a semiconductor device according to the first embodiment.
FIG. 6 is a plan view schematically showing a structure of a semiconductor device according to a second embodiment.
 DETAILED DESCRIPTION
A semiconductor device that includes a plurality of semiconductor chips and can attenuate oscillation promptly is described.
In general, according to embodiments, a semiconductor device includes an insulating substrate, a first electrode plate disposed on the insulating substrate, a second electrode plate disposed on the insulating substrate, a third electrode plate disposed on the insulating substrate, a first semiconductor element disposed on the first electrode plate, a first electrode of the first semiconductor element being electrically connected to the first electrode plate, a second semiconductor element disposed on the second electrode plate, a first electrode of the second semiconductor element being electrically connected to the second electrode plate, a first bonding wire electrically connecting a second electrode of the first semiconductor element to the third electrode plate, and a second bonding wire electrically connecting a second electrode of the second semiconductor element to the third electrode plate.
Hereinafter, embodiments will be described with reference to the drawings.
First Embodiment
FIG. 1 is a plan view schematically showing a structure of a semiconductor device according to a first embodiment.
The semiconductor device of FIG. 1 includes an insulating substrate 1, first main electrode plates 2 a and 2 b, second main electrode plates 3 a and 3 b, a third main electrode plate 4, control electrode plates 5 a and 5 b, insulated gate bipolar transistor (IGBT) chips 11 a and 11 b (first semiconductor chips), diode chips 12 a and 12 b (second semiconductor chips), first terminals 13 a and 13 b, second terminals 14 a and 14 b, a third terminal 15, first bonding wires 21 a and 21 b, second bonding wires 22 a and 22 b, and third bonding wires 23 a and 23 b.
The insulating substrate 1 is, for example, an aluminum oxide substrate. In FIG. 1, an X direction and a Y direction that are parallel to a principal surface of the insulating substrate 1 and are perpendicular to each other and a Z direction that is perpendicular to the principal surface of the insulating substrate 1 are shown.
The IGBT chips 11 a and 11 b, each being a semiconductor chip with an IGBT, are provided on the first main electrode plates 2 a and 2 b, respectively. The first main electrode plates 2 a and 2 b are provided on the insulating substrate 1 and are electrically connected to collectors of the IGBT chips 11 a and 11 b, respectively.
The diode chips 12 a and 12 b, each being a semiconductor chip with a diode, are provided on the second main electrode plates 3 a and 3 b, respectively. The second main electrode plates 3 a and 3 b are provided on the insulating substrate 1 and are electrically connected to cathodes of the diode chips 12 a and 12 b, respectively.
The third main electrode plate 4 is provided on the insulating substrate 1. The third main electrode plate 4 is electrically connected to emitters of the IGBT chips 11 a and 11 b with the first bonding wires 21 a and 21 b, respectively, and is electrically connected to anodes of the diode chips 12 a and 12 b with the second bonding wires 22 a and 22 b, respectively.
The control electrode plates 5 a and 5 b are provided on the insulating substrate 1. The control electrode plates 5 a and 5 b are electrically connected to the gates of the IGBT chips 11 a and 11 b with the third bonding wires 23 a and 23 b, respectively.
The first main electrode plates 2 a and 2 b, the second main electrode plates 3 a and 3 b, the third main electrode plate 4, and the control electrode plates 5 a and 5 b are, for example, Cu (copper) foil.
The first terminals 13 a and 13 b are provided on surfaces of the first main electrode plates 2 a and 2 b, respectively. The second terminals 14 a and 14 b are provided on surfaces of the second main electrode plates 3 a and 3 b, respectively. The third terminal 15 is provided on a surface of the third main electrode plate 4.
In this embodiment, by electrically connecting the first terminals 13 a and 13 b and the second terminals 14 a and 14 b with a wiring line (not shown), the IGBT chips 11 a and 11 b and the diode chips 12 a and 12 b are connected in parallel.
A circuit configuration of the semiconductor device of this embodiment is shown in FIG. 2. FIG. 2 is a circuit diagram showing a part of the semiconductor device according to the first embodiment. FIG. 2 shows a state in which the IGBT chip 11 a and the diode chip 12 a are connected in parallel.
In this embodiment, there is a need to suppress a malfunction of the semiconductor device that may occur when a voltage exceeding a gate breakdown voltage is applied to gates of the IGBT chips 11 a and 11 b or a breakdown voltage between main electrodes is applied between the electrodes of the IGBT chips 11 a and 11 b and the diode chips 12 a and 12 b due to the high-frequency oscillation. An arrow P in FIG. 2 schematically indicates the oscillation generated between the IGBT chip 11 a and the diode chip 12 a. According to this embodiment, as will be described below in detail, such an oscillation can be attenuated promptly.
(1) Comparison between the First Embodiment and a Comparative Example
Next, with reference to FIGS. 1 and 3, the first embodiment is compared with a comparative example. FIG. 3 is a plan view schematically showing a structure of a semiconductor device according to the comparative example.
In FIG. 3, the IGBT chips 11 a and 11 b and the diode chips 12 a and 12 b are provided on one main electrode plate 2. On the other hand, in FIG. 1, the IGBT chips 11 a and 11 b and the diode chips 12 a and 12 b are provided on the main electrode plates 2 a, 2 b, 3 a, and 3 b, respectively.
Therefore, in this embodiment, to connect these semiconductor chips 11 a-12 b in parallel, the first terminals 13 a and 13 b and the second terminals 14 a and 14 b are connected with the wiring line. As a result, in this embodiment, a resistance component and an inductance component of this wiring line are added to the paths between these semiconductor chips 11 a-12 b.
Moreover, in FIG. 3, the IGBT chip 11 a and the diode chip 12 a are directly connected to each other with the bonding wire 21 a, and the IGBT chip 11 b and the diode chip 12 b are directly connected to each other with the bonding wire 21 b. On the other hand, in FIG. 1, the semiconductor chips 11 a-12 b are connected with the bonding wires 21 a-22 b via the third main electrode plate 4.
Thus, in this embodiment, a resistance component and an inductance component of the third main electrode plate 4 are added to the paths between these semiconductor chips 11 a-12 b.
In general, an R component (resistance component) added to an LC circuit has an effect of decreasing an amplitude of oscillation and accelerating attenuation of the oscillation. Therefore, according to this embodiment, with the resistance component added in the above-described manner, the oscillation generated between the IGBT chips, between the diode chips, and between the IGBT chip and the diode chip can be attenuated promptly.
Moreover, according to this embodiment, with the inductance component added in the above-described manner, the resonance frequency ω=(LC) of the semiconductor device can be varied. Therefore, according to this embodiment, by setting, for example, the frequency at a frequency that is less likely to generate a resonance frequency, a malfunction of the semiconductor device due to the oscillation can be suppressed more effectively.
Furthermore, note that resistances between each of the semiconductor chips 11 a-12 b and each of the terminals 13 a-15 of this embodiment is nearly equal to the resistances in the comparative example. As described above, according to this embodiment, a resistance component and an inductance component can be added to the paths between the semiconductor chips 11 a-12 b without increasing resistance between each of the semiconductor chips 11 a-12 b and each of the terminals 13 a-15.
(2) Details of the Structure of the Semiconductor Device According to the First Embodiment
Next, with reference to FIG. 1, the details of the structure of the semiconductor device according to the first embodiment will be described.
A line L denotes a center line between the IGBT chips 11 a and 11 b and between the diode chips 12 a and 12 b. In this embodiment, a pair of the IGBT chips 11 a and 11 b, a pair of the diode chips 12 a and 12 b, a pair of the first main electrode plates 2 a and 2 b, a pair of the second main electrode plates 3 a and 3 b, a pair of the control electrode plates 5 a and 5 b, a pair of the first terminals 13 a and 13 b, and a pair of the second terminals 14 a and 14 b are arranged in such a way as to be symmetric with respect to the center line L.
Such an arrangement according to this embodiment has an advantage that application of a high voltage is not likely to be applied only to one of the IGBT chips, because a resistance component and an inductance component added to the IGBT chips 11 a and 11 b can be uniform. The same goes for the diode chips 12 a and 12 b. Incidentally, each of the above-described pairs may be arranged asymmetrically with respect to the center line L. Moreover, the center line between the IGBT chips 11 a and 11 b may not be the same as the center line between the diode chips 12 a and 12 b.
Moreover, in this embodiment, the third main electrode plate 4 and the third terminal 15 are both arranged symmetrically with respect to the center line L. With such an arrangement according to this embodiment also has an advantage that, for example, a high voltage is not likely to be applied only to one of the IGBT chips (the same goes for the diode chips).
Furthermore, in this embodiment, the first terminals 13 a and 13 b are between the IGBT chips 11 a and 11 b, and the second terminals 14 a and 14 b are between the diode chips 12 a and 12 b. Such an arrangement according to this embodiment has an advantage that the first terminals 13 a and 13 b and the second terminals 14 a and 14 b can be connected by a short wiring line.
In addition, in this embodiment, the third main electrode plate 4 is between the IGBT chips 11 a and 11 b and the diode chips 12 a and 12 b. Such an arrangement according to this embodiment has an advantage that, for example, the third main electrode plate 4 can be easily connected to all of the IGBT chips 11 a and 11 b and the diode chips 12 a and 12 b.
Moreover, in this embodiment, the control electrode plates 5 a and 5 b are arranged on the respective sides of the IGBT chips 11 a and 11 b opposite from the third main electrode plate 4.
Furthermore, as shown in FIG. 4, the semiconductor device of this embodiment may include a plurality of third main electrode plates 4 a and 4 b and a plurality of third terminals 15 a and 15 b. FIG. 4 is a plan view schematically showing a modified example of a semiconductor device according to the first embodiment.
In this modified example, the third main electrode plate 4 a is electrically connected to the IGBT chip 11 a and the diode chip 12 a, and the third main electrode plate 4 b is electrically connected to the IGBT chip 11 b and the diode chip 12 b. Moreover, in this modified example, by connecting the first terminals 13 a and 13 b and the second terminals 14 a and 14 b by a wiring line (not shown) and connecting the third terminals 15 a and 15 b by a wiring line (not shown), the semiconductor chips 11 a-12 b are connected in parallel. Furthermore, in this modified example, a pair of the third main electrode plates 4 a and 4 b and a pair of the third terminals 15 a and 15 b are arranged symmetrically with respect to the center line L.
Moreover, in this embodiment, the IGBT chips 11 a and 11 b and the diode chips 12 a and 12 b may be formed with the same substrate or may be formed with different substrates. For example, the IGBT chips 11 a and 11 b may be formed with a Si (silicon) substrate, and the diode chips 12 a and 12 b may be formed with a SiC (silicon carbide) substrate. In this case, a structure of FIG. 5 may be adopted. FIG. 5 is a plan view schematically showing a modified example of a semiconductor device according to the first embodiment.
In this modified example, the first terminals 13 a and 13 b are between the IGBT chips 11 a and 11 b, and the diode chips 12 a and 12 b are between the second terminals 14 a and 14 b. As a result, the first terminals 13 a and 13 b are located near each other, and the second terminals 14 a and 14 b are located away from each other.
FIG. 5 schematically depicts a first wiring line W1 that electrically connects the first terminals 13 a and 13 b and a second wiring line W2 that electrically connects the second terminals 14 a and 14 b. In this modified example, since a distance between the second terminals 14 a and 14 b is greater than a distance between the first terminals 13 a and 13 b, the second wiring line W2 is longer than the first wiring line W1.
The reason why such a structure is adopted in this modified example is as follows. Since the SiC substrate can reduce electric resistivity while maintaining high avalanche field intensity compared to the Si substrate, the SiC substrate has an advantage that, for example, a terminal end area of a device can be shortened. Moreover, the SiC substrate also has an advantage that the melting point of the SiC substrate is higher than the melting point of the Si substrate. However, when the SiC substrate is adopted, the resistance of the semiconductor chip is decreased, which will allow greater oscillation to occur between the diode chips 12 a and 12 b.
Therefore, in this modified example, the resistance and the inductance of the second wiring line W2 are set to be greater than the resistance and the inductance of the first wiring line W1 by making the second wiring line W2 longer than the first wiring line W1. Thus, according to this modified example, the oscillation between the diode chips 12 a and 12 b can be attenuated promptly. Moreover, according to this modified example, the resonance frequency of the semiconductor device can be varied greatly by the inductance of the second wiring line W2.
Incidentally, when it is assumed that a length of each of the diode chips 12 a and 12 b in the Y direction is α and a distance between the diode chips 12 a and 12 b in the Y direction is β, the second wiring line W2 of this modified example is longer than 2α+β.
Incidentally, in this embodiment, not only the diode chips 12 a and 12 b but also the IGBT chips 11 a and 11 b may be formed on a SiC substrate. Moreover, in this embodiment, one or more of the IGBT chips 11 a and 11 b and the diode chips 12 a and 12 b may be formed on a SiC substrate, and the remaining chips may be formed of a different substrate (for example, a Si substrate). The SiC substrate is an example of a substrate containing silicon and carbon.
As described above, in this embodiment, the first semiconductor chips 11 a and 11 b and the second semiconductor chips 12 a and 12 b are provided on the first main electrode plates 2 a and 2 b and the second main electrode plates 3 a and 3 b, respectively, and these semiconductor chips 11 a-12 b are electrically connected to the third main electrode plate 4. Therefore, according to this embodiment, the oscillation of the semiconductor device including the plurality of semiconductor chips 11 a-12 b can be attenuated promptly.
Second Embodiment
FIG. 6 is a plan view schematically showing a structure of a semiconductor device according to a second embodiment.
In FIG. 1, the first main electrode plates 2 a and 2 b are provided for the IGBT chips 11 a and 11 b, respectively, and the second main electrode plates 3 a and 3 b are provided for the diode chips 12 a and 12 b, respectively. Therefore, in FIG. 1, there is a one-to-one correspondence between the first main electrode plates 2 a and 2 b and the IGBT chips 11 a and 11 b, and there is a one-to-one correspondence between the second main electrode plates 3 a and 3 b and the diode chips 12 a and 12 b.
On the other hand, in FIG. 6, a plurality of IGBT chips 11 a and 11 b are provided on a single first main electrode plate 2, and a plurality of diode chips 12 a and 12 b are provided on a single second main electrode plate 3.
Moreover, in FIG. 6, a first terminal 13 shared by the IGBT chips 11 a and 11 b is provided on the first main electrode plate 2, and a second terminal 14 shared by the diode chips 12 a and 12 b is provided on the second main electrode plate 3. The first terminal 13 is arranged on the center line L between the IGBT chips 11 a and 11 b and is arranged symmetrically with respect to the center line L. Moreover, the second terminal 14 is arranged on the center line L between the diode chips 12 a and 12 b and is arranged symmetrically with respect to the center line L.
In this embodiment, by electrically connecting the first terminal 13 and the second terminal 14 with a wiring line (not shown), the IGBT chips 11 a and 11 b and the diode chips 12 a and 12 b are connected in parallel.
The semiconductor device according to the second embodiment has an advantage that, for example, an area of the insulating substrate 1 can be reduced more easily as compared to the semiconductor device according to the first embodiment.
Moreover, in the second embodiment, the IGBT chips 11 a and 11 b are directly connected to each other with the first main electrode plate 2, and the diode chips 12 a and 12 b are directly connected to each other with the second main electrode plate 3. Therefore, the structure of the second embodiment is effective when, for example, the oscillation between the IGBT chips 11 a and 11 b and the oscillation between the diode chips 12 a and 12 b are not so significant compared to the oscillation between the IGBT chips 11 a and 11 b and the diode chips 12 a and 12 b.
Incidentally, in the second embodiment, for example, the IGBT chip 11 a and the diode chip 12 a may be provided on the first main electrode plate 2, and the IGBT chip 11 b and the diode chip 12 b may be provided on the second main electrode plate 3. In this case, the IGBT chip 11 a and the diode chip 12 a are examples of the first semiconductor chip, and the IGBT chip 11 b and the diode chip 12 b are examples of the second semiconductor chip.
Furthermore, the semiconductor device of the first or second embodiment may include three or more IGBT chips 11 and three or more diode chips 12 on the same insulating substrate 1 or may include only one IGBT chip 11 and only one diode chip 12 on the same insulating substrate 1.
While certain embodiments have been described, these embodiments have been presented by way of example only, and are not intended to limit the scope of the inventions. Indeed, the novel embodiments described herein may be embodied in a variety of other forms; furthermore, various omissions, substitutions and changes in the form of the embodiments described herein may be made without departing from the spirit of the inventions. The accompanying claims and their equivalents are intended to cover such forms or modifications as would fall within the scope and spirit of the inventions.

Claims (9)

What is claimed is:
1. A semiconductor device, comprising:
an insulating substrate;
a first electrode plate disposed on the insulating substrate;
a second electrode plate disposed on the insulating substrate;
a third electrode plate disposed on the insulating substrate;
a fourth electrode plate disposed on the insulating substrate;
a fifth electrode plate disposed on the insulating substrate;
a first semiconductor element disposed on the first electrode plate, a first electrode of the first semiconductor element being connected to the first electrode plate;
a second semiconductor element disposed on the second electrode plate, a first electrode of the second semiconductor element being connected to the second electrode plate;
a third semiconductor element disposed on the third electrode plate, a first electrode of the third semiconductor element being connected to the third electrode plate;
a fourth semiconductor element disposed on the fourth electrode plate, a first electrode of the fourth semiconductor element being connected to the fourth electrode plate;
a first bonding wire electrically connecting a second electrode of the first semiconductor element to the fifth electrode plate;
a second bonding wire electrically connecting a second electrode of the second semiconductor element to the fifth electrode plate;
a third bonding wire electrically connecting a second electrode of the third semiconductor element to the fifth electrode plate; and
a fourth bonding wire electrically connecting a second electrode of the fourth semiconductor element to the fifth electrode plate.
2. The semiconductor device according to claim 1, wherein each of the first and third semiconductor elements includes a transistor, and
each of the second and fourth semiconductor elements includes a diode.
3. The semiconductor device according to claim 1, wherein the fifth electrode plate is between the first electrode plate and the second electrode plate and between the third electrode plate and the fourth electrode plate.
4. The semiconductor device according to claim 1, wherein the second electrode of the first semiconductor element, the second electrode of the second semiconductor element, the second electrode of the third semiconductor element, and the second electrode of the fourth semiconductor element are electrically connected through the fifth electrode plate.
5. The semiconductor device according to claim 1, further comprising:
a fifth bonding wire electrically connecting a first terminal of the first electrode plate and a third terminal of the third electrode plate; and
a sixth bonding wire electrically connecting a second terminal of the second electrode plate and a fourth terminal of the fourth electrode plate.
6. The semiconductor device according to claim 5, wherein
the first and third terminals are between the first semiconductor element and the third semiconductor element,
the second and fourth semiconductor elements are between the second terminal and the fourth terminal, and
the fifth bonding wire is shorter than the sixth bonding wire.
7. The semiconductor device according to claim 6, wherein
the first and third semiconductor elements include a silicon substrate, and
the second and fourth semiconductor elements include a silicon carbide substrate.
8. The semiconductor device according to claim 5, wherein
the first and third semiconductor elements are between the first terminal and the third terminal,
the second and fourth terminals are between the second semiconductor element and the fourth semiconductor element, and
the fifth bonding wire is longer than the sixth bonding wire.
9. The semiconductor device according to claim 8, wherein
the first and third semiconductor elements include a silicon carbide substrate, and
the second and fourth semiconductor elements include a silicon substrate.
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Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11163257A (en) 1997-11-26 1999-06-18 Fuji Electric Co Ltd Semiconductor device
US20010033018A1 (en) * 2000-04-25 2001-10-25 Hiroshi Kimura Semiconductor device, its manufacturing method and electrodeposition frame
US20020030268A1 (en) * 2000-06-08 2002-03-14 Noriaki Sakamoto Hybrid integrated circuit device
JP2002141465A (en) 2000-10-31 2002-05-17 Toshiba Corp Power semiconductor module
US6552429B2 (en) 2000-08-28 2003-04-22 Mitsubishi Denki Kabushiki Kaisha Power switching semiconductor device with suppressed oscillation
JP2010178615A (en) 2000-08-28 2010-08-12 Mitsubishi Electric Corp Semiconductor device
US20130181228A1 (en) * 2012-01-18 2013-07-18 Mitsubishi Electric Corporation Power semiconductor module and method of manufacturing the same
US20140061673A1 (en) * 2011-06-16 2014-03-06 Fuji Electric Co., Ltd. Semiconductor unit and semiconductor device using the same

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001118987A (en) * 1999-10-20 2001-04-27 Nissan Motor Co Ltd Power semiconductor module
KR101375502B1 (en) * 2010-01-15 2014-03-18 미쓰비시덴키 가부시키가이샤 Power semiconductor module

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11163257A (en) 1997-11-26 1999-06-18 Fuji Electric Co Ltd Semiconductor device
US20010033018A1 (en) * 2000-04-25 2001-10-25 Hiroshi Kimura Semiconductor device, its manufacturing method and electrodeposition frame
US20020030268A1 (en) * 2000-06-08 2002-03-14 Noriaki Sakamoto Hybrid integrated circuit device
US6552429B2 (en) 2000-08-28 2003-04-22 Mitsubishi Denki Kabushiki Kaisha Power switching semiconductor device with suppressed oscillation
JP2010178615A (en) 2000-08-28 2010-08-12 Mitsubishi Electric Corp Semiconductor device
JP2002141465A (en) 2000-10-31 2002-05-17 Toshiba Corp Power semiconductor module
US20140061673A1 (en) * 2011-06-16 2014-03-06 Fuji Electric Co., Ltd. Semiconductor unit and semiconductor device using the same
US20130181228A1 (en) * 2012-01-18 2013-07-18 Mitsubishi Electric Corporation Power semiconductor module and method of manufacturing the same

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