US9106046B2 - Integrated optical structure comprising an optical isolator - Google Patents

Integrated optical structure comprising an optical isolator Download PDF

Info

Publication number
US9106046B2
US9106046B2 US14/349,394 US201214349394A US9106046B2 US 9106046 B2 US9106046 B2 US 9106046B2 US 201214349394 A US201214349394 A US 201214349394A US 9106046 B2 US9106046 B2 US 9106046B2
Authority
US
United States
Prior art keywords
optical
layer
magneto
integrated
isolator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
US14/349,394
Other versions
US20140247477A1 (en
Inventor
Guang-Hua Duan
Francois Brillouet
Jean-Louis Gentner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alcatel Lucent SAS
Original Assignee
Alcatel Lucent SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alcatel Lucent SAS filed Critical Alcatel Lucent SAS
Assigned to ALCATEL-LUCENT reassignment ALCATEL-LUCENT ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: BRILLOUET, FRANCOIS, DUAN, GUANG-HUA, GENTNER, JEAN-LOUIS
Assigned to CREDIT SUISSE AG reassignment CREDIT SUISSE AG SECURITY INTEREST Assignors: ALCATEL LUCENT
Assigned to ALCATEL LUCENT reassignment ALCATEL LUCENT RELEASE OF SECURITY INTEREST Assignors: CREDIT SUISSE AG
Publication of US20140247477A1 publication Critical patent/US20140247477A1/en
Application granted granted Critical
Publication of US9106046B2 publication Critical patent/US9106046B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H01S5/0064—Anti-reflection components, e.g. optical isolators
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/09—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on magneto-optical elements, e.g. exhibiting Faraday effect
    • G02F1/095—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on magneto-optical elements, e.g. exhibiting Faraday effect in an optical waveguide structure
    • G02F1/0955—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on magneto-optical elements, e.g. exhibiting Faraday effect in an optical waveguide structure used as non-reciprocal devices, e.g. optical isolators, circulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083—Constructional arrangements
    • G02B2006/12085—Integrated
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12133—Functions
    • G02B2006/12157—Isolator
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/021—Silicon based substrates
    • H01S5/02248—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
    • H01S5/1014—Tapered waveguide, e.g. spotsize converter
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/755—Nanosheet or quantum barrier/well, i.e. layer structure having one dimension or thickness of 100 nm or less

Definitions

  • the present invention pertains to an optical isolator intended to be integrated into optical devices, such as optoelectronic components, and, in particular, photonic integrated circuits, or PICs. These optical devices are used mainly in the field of high-speed digital telecommunications.
  • the invention also extends to the method for manufacturing such an optical isolator.
  • optical isolator is a nonreciprocal passive device that has high attenuation in one direction and low attenuation in the opposite direction; it makes it possible to transmit light in only one direction, but prevents light from propagating in an opposite direction. For this reason, optical isolators are essential elements for eliminating the negative effects of reflected and parasitic light beams in fiber-optic transmission, particularly at high speeds.
  • integrated component refers to a component that is monolithically incorporated into a device, meaning a component supported by a substrate that is shared with the device's components.
  • a first type of optical isolator implements a nonreciprocal optical effect so that it can serve as an optical isolator, the most well-known of which is the Faraday effect.
  • magneto-optical materials change the light's polarization direction.
  • An optical isolator of this first type is normally composed of (i) a magnetic garnet crystal that has a Faraday effect, (ii) a permanent magnet for applying a defined magnetic field, and (iii) polarizing elements that allow only light that has a given direction of polarization (incident light) to pass through, while blocking the passage of light that has a direction of polarization orthogonal to that of the incident light.
  • This first type of optical isolator is hard to integrate into optical devices, as it requires multiple components whose integrated version is not yet available.
  • optical isolator an absorption optical isolator, whose complex optical index is nonreciprocal.
  • the optical index of some ferromagnetic materials such as an iron-cobalt metal alloy, depends on the direction in which the light propagates. Depending on its direction of propagation, the light will consequently be more attenuated or less.
  • This second type of optical isolator is well suited to being integrated into optical devices that particularly comprise a semiconductor laser source.
  • the ferromagnetic metals introduce high optical power losses, often greater than 20 dB, including in the incident direction.
  • Semiconductor optical amplifiers, or SOAs must therefore also be integrated in order to compensate for these optical power losses.
  • SOAs Semiconductor optical amplifiers
  • the amplification of the optical signal provided by the SOA makes it possible to offset the ferromagnetic material's optical power losses in a first direction of incident light propagation. In the direction opposite the propagation, the ferromagnetic material's attenuation remains predominant, in order to keep the light from traveling backwards.
  • optical isolator of this second type normally comprises an optical amplifier SOA made up of a stack (i) of an n-doped semiconductor material layer, (ii) an amplifying active part, which has an optical index greater than the layers that surround it, and (iii) a p-doped semiconductor material layer.
  • the ferromagnetic metals may be deposited onto the top or sides of the SOA's waveguide.
  • the strip's height is very critical, as the optical signal's propagation mode needs to interact with the ferromagnetic metals. This is because the waveguide's thickness determines the distance separating the ferromagnetic metals from the amplifying active layer. In this case, there will be considerable optical power losses due both to the electrical contact layers, often made of an InGaAs, ternary semiconducting material, and to the electrical contact-conveying metallic layer, which is placed above the waveguide.
  • the ferromagnetic metal layer depositing operation is the very critical operation.
  • the step of removing material by etching turns out to be very difficult to carry out in this type of optical isolator.
  • the purpose of the present invention is to disclose an integrated optical structure comprising an optical isolator of the second type that does not exhibit the drawbacks of optical isolators of this type known from the prior art.
  • the object of the present invention is an integrated optical structure comprising
  • the optical isolator's integrated optical structure uses the hybrid technology of integrating III-V semiconducting materials on a silicon-based substrate, called “III-V on SOI” (for “Silicon On Isolator”).
  • III-V on SOI for “Silicon On Isolator”.
  • the magneto-optical layer is now disposed beneath the waveguide's active zone.
  • the optical isolator's magneto-optical layer is a layer of ferromagnetic metallic material.
  • Ferromagnetic materials include iron, cobalt, nickel, Fe-based alloys (particularly ferrites) and/or Co, and HEUSLER alloys with the formula X 2 YZ, such as Cu 2 MnAl, Cu 2 MnIn, Cu 2 MnSn, etc . . .
  • the optical isolator's magneto-optical layer is a metallic alloy layer with the equiatomic composition Fe 50 Co 50 .
  • the optical isolator's magneto-optical layer is a magnetic oxide layer (garnets, perovskite, etc.).
  • the upper insulating layer and the lower insulating layer are made up of an insulating material chosen from between a silicon nitride SiN and a silicon oxide SiO x .
  • the n-doped semiconductor layer and p-doped semiconductor layer of the waveguide are made of a semiconducting material of the III-V group, particularly indium phosphide InP or gallium arsenide GaAs.
  • the active area of the waveguide comprises a structure with multiple quantum wells.
  • the method comprises the following steps:
  • the magneto-optical layer is deposited by a cathodic spraying method.
  • the magneto-optical layer is etched in order to give it a structure that makes it possible to increase the magneto-optical effect.
  • the method comprises at least one operation intended to smooth the surface of a layer of insulating material using a CMP method.
  • the present invention has several advantages, including:
  • the invention is intended to be used by optoelectronic component manufacturers, particularly PIC photonic integrated circuits.
  • FIG. 1 depicts a lateral perspective view of one embodiment of an integrated optical structure comprising an optical isolator
  • FIGS. 2 a and 2 b depict a view, respectively from the top and side, of another embodiment of an integrated optical structure comprising an optical isolator,
  • FIG. 3 schematically depicts the method of creating an integrated optical structure comprising an optical isolator.
  • FIG. 1 depicts an integrated optical structure comprising an optical isolator created by the hybrid technology III-V on SOI.
  • the SOI technology consists of inserting an electrically insulating layer of a silicon oxide SiO x , such as SiO 2 , between a semiconducting thin upper layer of silicon Si and a semiconducting thick lower layer of silicon Si, with the assembly constituting a SOI base.
  • the optical isolator 1 is integrated onto a SOI base 2 that comprises a crystalline silicon Si layer 3 , or any other semiconducting substrate, covered by an insulating layer 4 , for example one made of a silicon oxide SiO x like silica SiO 2 , topped with a second crystalline silicon Si layer 5 .
  • the thickness of the silicon layers is at most 0.5 ⁇ m and that of the silicon oxide layer is about 2 ⁇ m.
  • the optical isolator 1 is associated with an optical waveguide 6 made of a stack of a semiconducting lower n-doped III-V layer 7 , for example an indium phosphide InP based one, an active area 8 , and a semiconducting upper p-doped III-V layer 9 , for example also an indium phosphide InP based one.
  • the semiconducting material III-V may particularly be an indium phosphide InP or a gallium arsenide GaAs.
  • the active area 8 comprises, for example, an MQW (“Multiple Quantum Wells”) structure.
  • the SOA 10 comprises the waveguide 6 with a semiconducting multilayer structure, topped with an upper electrical contact layer 11 , for example made of an InGaAs ternary semiconducting material.
  • the upper electrical contact layer 11 is itself coated with a metallic film 12 that makes it possible to inject current through the metallic contact into the active layer of the SOA amplifying semiconducting structure.
  • the lower semiconducting layer 7 plays the role of a lower electrical contact layer for the SOA optical amplifier 10 .
  • a metallic layer 13 may then be affixed onto the lower semiconducting layer 7 to allow the current to continue. The optical losses may thereby be compensated by injecting electrical current into a SOA semiconductor optical amplifier structure with multiple quantum wells.
  • the optical isolator 1 comprises an upper insulating layer 14 and a lower insulating layer 15 , for example one made of a silicon nitride Si x N y like Si 3 N 4 , or a silicon oxide SiO x .
  • the insulating layer is made of SiO 2 .
  • a magneto-optical layer 16 of ferromagnetic metals is sandwiched between the upper insulating layer 14 and the lower insulating layer 15 .
  • the magneto-optical layer 16 comprises, for example, ferromagnetic metals, such as an iron-cobalt [Fe:Co] metal alloy, the atomic percentage of iron being comprised between 50% and 90%, and preferably the metal alloy is an equiatomic composition Fe 50 Co 50 .
  • the magneto-optical layer 16 creates an attenuation of the light wave 17 propagating within the optical waveguide 6 .
  • the ferromagnetic, metallic magneto-optical layer 16 is magnetized perpendicular to the direction in which the optical signal propagates.
  • the magneto-optical layer 16 is constructed here by a method comprising steps of depositing followed by steps of etching, so as to let the magneto-optical layer 16 made of a ferromagnetic metallic alloy [Fe:Co] occupy a determined surface.
  • the SOA optical amplifier 10 comprising the waveguide 6 with III-V semiconductors makes it possible to obtain optical amplification, while the ferromagnetic metals 16 introduce a refraction index or non-reciprocal losses in order to serve as an optical isolator.
  • the waveguide's width may vary from 0.5 ⁇ m to 2 ⁇ m, for example.
  • the magneto-optical layer 16 for example a ferromagnetic metallic alloy [Fe:Co] preferably has a thickness between 30 nm and 150 nm, and the upper 14 and lower 15 insulating layers, for example made of silica SiO 2 , placed above and in contact with the magneto-optical layer 16 , have a thickness of about 30 nm.
  • the optical waveguide 6 based on III-V semiconductors here has a typical layered structure that allows coupling between the III-V semiconductors and the optical isolator 1 integrated onto a base 2 constructed using the SOI technique.
  • TM mode for “Transverse Magnetic”, a mode for which the losses and the refraction index of ferromagnetic metals are non-reciprocal
  • metallic magneto-optical layer 16 with more than 0.5% of the mode confinement factor in the magneto-optical layer 16
  • Such a structure comprises two extreme regions 20 A and 20 B of the amplifier, in which the III-V waveguide typically has a width of 2 ⁇ m.
  • the structure also comprises a central isolator region 21 whose width is about 0.5 ⁇ m.
  • the structure finally comprises two intermediary regions 22 A and 22 B in which two cones enable the transition between the isolator and amplifier regions.
  • the optical mode propagates within the SOA optical amplifier without interacting with the optical isolator.
  • the optical mode whose profile has been altered, partially propagates within the optical isolator.
  • the optical isolator's integrated optical structure may be inserted into a PIC photonic integrated circuit, for example to allow insulation between two optical devices.
  • the invention may also be used to construct an optical insulator integrated optical structure using a magneto-optical layer made of a magnetic oxide, such as a magneto-optical garnet (YIG, BIG, Ce:YIG, etc . . . ), rather than ferromagnetic metals.
  • a magneto-optical garnet YIG, BIG, Ce:YIG, etc . . .
  • the garnet layer is deposited or affixed onto a lower insulating layer covering a base SOI.
  • the method for manufacturing the integrated optical structure is schematically depicted in FIG. 3 . Regardless of the nature of the magneto-optical layer, the construction of the integrated optical structure proceeds in a like manner.
  • the magneto-optical layer 32 is then deposited onto the lower insulating layer 31 , for example by a cathodic spraying method, during a second step of depositing 41 .
  • the magneto-optical layer 32 is etched in order to give it a structure that makes it possible to increase the magneto-optical effect.
  • An example of such a structure is a Bragg grating, in which the magneto-optical layer is periodically etched, which causes the magneto-optical effect to increase within a wavelength range.
  • a third step of depositing 42 is used to deposit a second layer of an insulating material, for example silicon oxide SiO 2 atop the etched magneto-optical layer 32 in order to obtain the upper insulating layer 33 .
  • the surface of the new assembly is itself made flat by a CMP method.
  • a III-V semiconducting die 34 is affixed onto the upper insulating layer 33 deposited atop the magneto-optical layer 32 , for example, one made of ferromagnetic metal or garnet.
  • the III-V semiconducting die 34 is treated in order to create the III-V active waveguide of the SOA optical amplifier, whose presence makes it possible to offset the optical power losses in this sort of optical isolator.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Nonlinear Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Optical Integrated Circuits (AREA)
  • Semiconductor Lasers (AREA)
  • Light Guides In General And Applications Therefor (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)

Abstract

An integrated optical structure includes at least one optical isolator, having a magneto-optical layer, associated with at least one SOA optical amplifier having a waveguide having an n-doped semiconductor layer, a p-doped semiconductor layer, and an active area disposed between the n-doped semiconductor layer and the p-doped semiconductor layer. The optical isolator is disposed between an SOI base and the SOA optical amplifier's waveguide. The optical isolator's magneto-optical layer is disposed between a lower insulating layer and an upper insulating layer. The optical isolator's magneto-optical layer may be a layer of ferromagnetic metallic material, such as a Fe—Co metallic alloy, or a magnetic oxide layer. An optical device includes at least one integrated optical structure.

Description

This application is a national phase under 35 U.S.C. §371 of PCT International Application No. PCT/EP2012/070563 which has an International filing date of Oct. 17, 2012, which claims priority to French patent application number FR1159501 filed Oct. 20, 2011; the entire contents of each of which are hereby incorporated by reference.
CROSS-REFERENCE
This application is based on French Patent Application No. 11,59,501 filed on Oct. 20, 2011, the disclosure of which is hereby incorporated by reference thereto in its entirety, and the priority of which is hereby claimed under 35 U.S.C. §119.
BACKGROUND
The present invention pertains to an optical isolator intended to be integrated into optical devices, such as optoelectronic components, and, in particular, photonic integrated circuits, or PICs. These optical devices are used mainly in the field of high-speed digital telecommunications. The invention also extends to the method for manufacturing such an optical isolator.
An optical isolator is a nonreciprocal passive device that has high attenuation in one direction and low attenuation in the opposite direction; it makes it possible to transmit light in only one direction, but prevents light from propagating in an opposite direction. For this reason, optical isolators are essential elements for eliminating the negative effects of reflected and parasitic light beams in fiber-optic transmission, particularly at high speeds.
Today, commercial products do not contain any optical isolators integrated into their chips. Manufacturers of optoelectronic components, particularly photonic integrated circuits, or PICs, await a solution. In the remainder of the text, the term “integrated component” refers to a component that is monolithically incorporated into a device, meaning a component supported by a substrate that is shared with the device's components.
Two types of optical isolators have been studied. A first type of optical isolator implements a nonreciprocal optical effect so that it can serve as an optical isolator, the most well-known of which is the Faraday effect. When subjected to an outside magnetic field, some materials, known as magneto-optical materials, change the light's polarization direction. An optical isolator of this first type is normally composed of (i) a magnetic garnet crystal that has a Faraday effect, (ii) a permanent magnet for applying a defined magnetic field, and (iii) polarizing elements that allow only light that has a given direction of polarization (incident light) to pass through, while blocking the passage of light that has a direction of polarization orthogonal to that of the incident light. This first type of optical isolator is hard to integrate into optical devices, as it requires multiple components whose integrated version is not yet available.
There is a second type of optical isolator, an absorption optical isolator, whose complex optical index is nonreciprocal. In the presence of a magnetic field, the optical index of some ferromagnetic materials, such as an iron-cobalt metal alloy, depends on the direction in which the light propagates. Depending on its direction of propagation, the light will consequently be more attenuated or less. This second type of optical isolator is well suited to being integrated into optical devices that particularly comprise a semiconductor laser source.
In this second sort of optical isolator, the ferromagnetic metals introduce high optical power losses, often greater than 20 dB, including in the incident direction. Semiconductor optical amplifiers, or SOAs, must therefore also be integrated in order to compensate for these optical power losses. Thus, the amplification of the optical signal provided by the SOA makes it possible to offset the ferromagnetic material's optical power losses in a first direction of incident light propagation. In the direction opposite the propagation, the ferromagnetic material's attenuation remains predominant, in order to keep the light from traveling backwards.
And optical isolator of this second type normally comprises an optical amplifier SOA made up of a stack (i) of an n-doped semiconductor material layer, (ii) an amplifying active part, which has an optical index greater than the layers that surround it, and (iii) a p-doped semiconductor material layer. In order to integrate the optical isolator, the ferromagnetic metals may be deposited onto the top or sides of the SOA's waveguide.
In the event that ferromagnetic metals are deposited onto the top of the SOA's waveguide, the strip's height is very critical, as the optical signal's propagation mode needs to interact with the ferromagnetic metals. This is because the waveguide's thickness determines the distance separating the ferromagnetic metals from the amplifying active layer. In this case, there will be considerable optical power losses due both to the electrical contact layers, often made of an InGaAs, ternary semiconducting material, and to the electrical contact-conveying metallic layer, which is placed above the waveguide.
If the ferromagnetic metals are deposited on the sides of a SOA's waveguide, the ferromagnetic metal layer depositing operation, generally carried out in steps of depositing following by steps of etching, is the very critical operation. The step of removing material by etching turns out to be very difficult to carry out in this type of optical isolator.
SUMMARY
The purpose of the present invention is to disclose an integrated optical structure comprising an optical isolator of the second type that does not exhibit the drawbacks of optical isolators of this type known from the prior art.
It is a further purpose of the invention to disclose an integrated optical structure comprising an optical isolator whose performance is improved, particularly by a reduction in optical power losses, which contributes to a decrease in the SOA optical amplifier's power consumption.
It is a further purpose of the invention to disclose an integrated optical structure comprising an optical isolator that is easier and less expensive to manufacture.
The object of the present invention is an integrated optical structure comprising
    • at least one SOA optical amplifier comprising a waveguide comprising an n-doped semiconductor layer, a p-doped semiconductor layer, and an active zone disposed between the n-doped semiconductor layer and the p-doped semiconductor layer, associated with
    • at least one optical isolator disposed between an SOI base and the SOA optical amplifier waveguide, comprising a magneto-optical layer disposed between a lower insulating layer and an upper insulating layer.
The optical isolator's integrated optical structure uses the hybrid technology of integrating III-V semiconducting materials on a silicon-based substrate, called “III-V on SOI” (for “Silicon On Isolator”). In the present situation, instead of having a magneto-optical layer on top or on the side of the III-V semiconductor waveguide as in the prior art, the magneto-optical layer is now disposed beneath the waveguide's active zone.
According to one embodiment, the optical isolator's magneto-optical layer is a layer of ferromagnetic metallic material. Ferromagnetic materials include iron, cobalt, nickel, Fe-based alloys (particularly ferrites) and/or Co, and HEUSLER alloys with the formula X2YZ, such as Cu2MnAl, Cu2MnIn, Cu2MnSn, etc . . . Preferably, the optical isolator's magneto-optical layer is a metallic alloy layer with the equiatomic composition Fe50Co50.
According to another embodiment, the optical isolator's magneto-optical layer is a magnetic oxide layer (garnets, perovskite, etc.).
According to a first aspect, the upper insulating layer and the lower insulating layer are made up of an insulating material chosen from between a silicon nitride SiN and a silicon oxide SiOx.
According to a second aspect, the n-doped semiconductor layer and p-doped semiconductor layer of the waveguide are made of a semiconducting material of the III-V group, particularly indium phosphide InP or gallium arsenide GaAs.
According to a third aspect, the active area of the waveguide comprises a structure with multiple quantum wells.
It is a further object of the invention to have an optical device comprising at least one integrated optical structure as described above, comprising at least one optical isolator and at least one SOA optical amplifier.
It is a further object of the invention to have a method for creating the previously described integrated optical structure. The method comprises the following steps:
    • a first layer of an insulating material is deposited onto an SOI base,
    • a magneto-optical layer is deposited onto the first layer of insulating material,
    • a second layer of an insulating material is deposited onto the magneto-optical layer,
    • a semiconducting die is affixed to the second layer of insulating material,
    • the semiconducting die is treated in order to create an optical waveguide.
Preferably, the magneto-optical layer is deposited by a cathodic spraying method.
Advantageously, the magneto-optical layer is etched in order to give it a structure that makes it possible to increase the magneto-optical effect.
According to one variant, the method comprises at least one operation intended to smooth the surface of a layer of insulating material using a CMP method.
The present invention has several advantages, including:
    • injecting an electrical current into the amplifying active area is now separated from the magneto-optical layer, which allows it to be optimized independent of the optimization of the magneto-optical layer;
    • the technology for producing the optical device is based on III-V on SOI hybrid integration, so the manufacturing of the isolator is much easier than in the prior art, and the optical isolator may thereby be used on silicon PIC photonic integrated circuits.
The invention is intended to be used by optoelectronic component manufacturers, particularly PIC photonic integrated circuits.
BRIEF DESCRIPTION
Other characteristics and advantages of the present invention will become apparent upon reading the following description of one embodiment, which is naturally given by way of a non-limiting example, and in the attached drawing, in which:
FIG. 1 depicts a lateral perspective view of one embodiment of an integrated optical structure comprising an optical isolator,
FIGS. 2 a and 2 b depict a view, respectively from the top and side, of another embodiment of an integrated optical structure comprising an optical isolator,
FIG. 3 schematically depicts the method of creating an integrated optical structure comprising an optical isolator.
Naturally, as these figures serve only to illustrate the invention, the dimensions of the various elements depicted are not necessarily to scale.
DETAILED DESCRIPTION
FIG. 1 depicts an integrated optical structure comprising an optical isolator created by the hybrid technology III-V on SOI. The SOI technology consists of inserting an electrically insulating layer of a silicon oxide SiOx, such as SiO2, between a semiconducting thin upper layer of silicon Si and a semiconducting thick lower layer of silicon Si, with the assembly constituting a SOI base.
The optical isolator 1 is integrated onto a SOI base 2 that comprises a crystalline silicon Si layer 3, or any other semiconducting substrate, covered by an insulating layer 4, for example one made of a silicon oxide SiOx like silica SiO2, topped with a second crystalline silicon Si layer 5. Typically, the thickness of the silicon layers is at most 0.5 μm and that of the silicon oxide layer is about 2 μm.
The optical isolator 1 is associated with an optical waveguide 6 made of a stack of a semiconducting lower n-doped III-V layer 7, for example an indium phosphide InP based one, an active area 8, and a semiconducting upper p-doped III-V layer 9, for example also an indium phosphide InP based one. The semiconducting material III-V may particularly be an indium phosphide InP or a gallium arsenide GaAs. The active area 8 comprises, for example, an MQW (“Multiple Quantum Wells”) structure.
The SOA 10 comprises the waveguide 6 with a semiconducting multilayer structure, topped with an upper electrical contact layer 11, for example made of an InGaAs ternary semiconducting material. The upper electrical contact layer 11 is itself coated with a metallic film 12 that makes it possible to inject current through the metallic contact into the active layer of the SOA amplifying semiconducting structure. In this case, the lower semiconducting layer 7 plays the role of a lower electrical contact layer for the SOA optical amplifier 10. A metallic layer 13 may then be affixed onto the lower semiconducting layer 7 to allow the current to continue. The optical losses may thereby be compensated by injecting electrical current into a SOA semiconductor optical amplifier structure with multiple quantum wells.
The optical isolator 1 comprises an upper insulating layer 14 and a lower insulating layer 15, for example one made of a silicon nitride SixNy like Si3N4, or a silicon oxide SiOx. Preferably, the insulating layer is made of SiO2. A magneto-optical layer 16 of ferromagnetic metals is sandwiched between the upper insulating layer 14 and the lower insulating layer 15. The magneto-optical layer 16 comprises, for example, ferromagnetic metals, such as an iron-cobalt [Fe:Co] metal alloy, the atomic percentage of iron being comprised between 50% and 90%, and preferably the metal alloy is an equiatomic composition Fe50Co50. The magneto-optical layer 16 creates an attenuation of the light wave 17 propagating within the optical waveguide 6. The ferromagnetic, metallic magneto-optical layer 16 is magnetized perpendicular to the direction in which the optical signal propagates. The magneto-optical layer 16 is constructed here by a method comprising steps of depositing followed by steps of etching, so as to let the magneto-optical layer 16 made of a ferromagnetic metallic alloy [Fe:Co] occupy a determined surface. The SOA optical amplifier 10 comprising the waveguide 6 with III-V semiconductors makes it possible to obtain optical amplification, while the ferromagnetic metals 16 introduce a refraction index or non-reciprocal losses in order to serve as an optical isolator.
In this embodiment, the waveguide's width may vary from 0.5 μm to 2 μm, for example. The magneto-optical layer 16, for example a ferromagnetic metallic alloy [Fe:Co] preferably has a thickness between 30 nm and 150 nm, and the upper 14 and lower 15 insulating layers, for example made of silica SiO2, placed above and in contact with the magneto-optical layer 16, have a thickness of about 30 nm.
The optical waveguide 6 based on III-V semiconductors here has a typical layered structure that allows coupling between the III-V semiconductors and the optical isolator 1 integrated onto a base 2 constructed using the SOI technique. However, in order to have sufficient coupling between TM mode (for “Transverse Magnetic”, a mode for which the losses and the refraction index of ferromagnetic metals are non-reciprocal) and the metallic magneto-optical layer 16 (with more than 0.5% of the mode confinement factor in the magneto-optical layer 16), it is necessary to construct a very narrow III-V waveguide 6 (width below 2 μm) or to alter the layered vertical structure of the III-V material.
If the layered vertical structure of the III-V material is not altered, there is a waveguide structure as depicted in FIGS. 2 a and 2 b. Such a structure comprises two extreme regions 20A and 20B of the amplifier, in which the III-V waveguide typically has a width of 2 μm. The structure also comprises a central isolator region 21 whose width is about 0.5 μm. The structure finally comprises two intermediary regions 22A and 22B in which two cones enable the transition between the isolator and amplifier regions. In the extreme regions 20A and 20B, the optical mode propagates within the SOA optical amplifier without interacting with the optical isolator. In the central region 31, the optical mode, whose profile has been altered, partially propagates within the optical isolator.
The optical isolator's integrated optical structure may be inserted into a PIC photonic integrated circuit, for example to allow insulation between two optical devices.
The invention may also be used to construct an optical insulator integrated optical structure using a magneto-optical layer made of a magnetic oxide, such as a magneto-optical garnet (YIG, BIG, Ce:YIG, etc . . . ), rather than ferromagnetic metals. In this situation, the garnet layer is deposited or affixed onto a lower insulating layer covering a base SOI.
The method for manufacturing the integrated optical structure is schematically depicted in FIG. 3. Regardless of the nature of the magneto-optical layer, the construction of the integrated optical structure proceeds in a like manner.
It starts by creating the SOI base 30. Next, during the first step of depositing 40, a thick layer of an insulating material like silicon oxide SiO2 onto an SOI base 30 so as to cover its surface. A chemical and mechanical polishing, or CMP method is then applied to the assembly to obtain a flat surface. This results in a SOI base 30 topped with the lower insulating layer 31 with a thickness of between 30 nm and 150 nm.
The magneto-optical layer 32 is then deposited onto the lower insulating layer 31, for example by a cathodic spraying method, during a second step of depositing 41. Advantageously, the magneto-optical layer 32 is etched in order to give it a structure that makes it possible to increase the magneto-optical effect. An example of such a structure is a Bragg grating, in which the magneto-optical layer is periodically etched, which causes the magneto-optical effect to increase within a wavelength range.
A third step of depositing 42 is used to deposit a second layer of an insulating material, for example silicon oxide SiO2 atop the etched magneto-optical layer 32 in order to obtain the upper insulating layer 33. The surface of the new assembly is itself made flat by a CMP method.
Finally, during the fourth step 43, a III-V semiconducting die 34 is affixed onto the upper insulating layer 33 deposited atop the magneto-optical layer 32, for example, one made of ferromagnetic metal or garnet. The III-V semiconducting die 34 is treated in order to create the III-V active waveguide of the SOA optical amplifier, whose presence makes it possible to offset the optical power losses in this sort of optical isolator.

Claims (12)

There is claimed:
1. An integrated optical structure comprising
at least one SOA optical amplifier comprising a waveguide comprising an n-doped semiconductor layer, a p-doped semiconductor layer, and an active zone disposed between the n-doped semiconductor layer and the p-doped semiconductor layer, associated with
at least one optical isolator disposed between a SOI base and the SOA optical amplifier's waveguide, comprising a magneto-optical layer,
wherein the magneto-optical layer is disposed between a lower insulating layer and an upper insulating layer.
2. An integrated optical structure according to claim 1, wherein the optical isolator's magneto-optical layer is a layer of ferromagnetic metallic material.
3. An integrated optical structure according to claim 2, wherein the optical isolator's magneto-optical layer is a Fe—Co metallic alloy layer.
4. An integrated optical structure according to claim 1, wherein the optical isolator's magneto-optical layer is a layer of magnetic oxide.
5. An integrated optical structure according to claim 1, wherein the upper insulating layer and the lower insulating layer are made up of an insulating material chosen from among a silicon nitride SixNy and a silicon oxide SiOx.
6. An integrated optical structure according to claim 1, wherein the n-doped semiconductor layer and the p-doped semiconductor layer of the waveguide are made of a group III-V semiconductor material.
7. An integrated optical structure according to claim 1, wherein the waveguide's active area comprises a multiple quantum well structure.
8. An optical device comprising at least one integrated optical structure according to claim 1, comprising at least one optical isolator and at least one SOA optical amplifier.
9. A method for constructing an integrated optical structure according to claim 1, comprising
a first layer of an insulating material is deposited onto an SOI base,
a magneto-optical layer is deposited onto the first layer of insulating material,
a second layer of an insulating material is deposited onto the magneto-optical layer,
a semiconducting die is affixed to the second layer of insulating material,
the semiconducting die is treated in order to create an optical waveguide.
10. A method according to claim 9, wherein the magneto-optical layer is deposited by a cathodic spraying method.
11. A method according to one of the claim 10, wherein the magneto-optical layer is etched in order to give it a structure that makes it possible to increase the magneto-optical effect.
12. A method according to claim 10, comprising at least one operation intended to smooth the surface of a layer of insulating material using a chemical and mechanical polishing method.
US14/349,394 2011-10-20 2012-10-17 Integrated optical structure comprising an optical isolator Expired - Fee Related US9106046B2 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR1159501 2011-10-20
FR1159501A FR2981803B1 (en) 2011-10-20 2011-10-20 INTEGRATED OPTICAL STRUCTURE COMPRISING AN OPTICAL ISOLATOR
PCT/EP2012/070563 WO2013057138A1 (en) 2011-10-20 2012-10-17 Integrated optical structure comprising an optical isolator

Publications (2)

Publication Number Publication Date
US20140247477A1 US20140247477A1 (en) 2014-09-04
US9106046B2 true US9106046B2 (en) 2015-08-11

Family

ID=47040732

Family Applications (1)

Application Number Title Priority Date Filing Date
US14/349,394 Expired - Fee Related US9106046B2 (en) 2011-10-20 2012-10-17 Integrated optical structure comprising an optical isolator

Country Status (8)

Country Link
US (1) US9106046B2 (en)
EP (1) EP2769445B1 (en)
JP (1) JP5873181B2 (en)
KR (1) KR101604559B1 (en)
CN (1) CN103891068B (en)
FR (1) FR2981803B1 (en)
TW (1) TWI491952B (en)
WO (1) WO2013057138A1 (en)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015050602A1 (en) 2013-06-25 2015-04-09 The Trustees Of Columbia University In The City Of New York Integrated photonic devices based on waveguides patterned with optical antenna arrays
US9407066B2 (en) * 2013-07-24 2016-08-02 GlobalFoundries, Inc. III-V lasers with integrated silicon photonic circuits
JP2016523393A (en) * 2013-08-19 2016-08-08 華為技術有限公司Ｈｕａｗｅｉ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ｃｏ．，Ｌｔｄ． Optical isolator
EP3426973A4 (en) * 2016-03-08 2019-10-09 Insiava (Pty) Limited INDIRECT PROHIBITED BAND LIGHT EMITTING DEVICE
WO2017184778A1 (en) 2016-04-20 2017-10-26 Arconic Inc. Fcc materials of aluminum, cobalt and nickel, and products made therefrom
WO2017184771A1 (en) 2016-04-20 2017-10-26 Arconic Inc. Fcc materials of aluminum, cobalt, iron and nickel, and products made therefrom
CN106405885A (en) * 2016-08-31 2017-02-15 欧阳征标 Leak-free magneto-optic thin film magnetic surface fast wave direction-controllable photodiode
CN106226925A (en) * 2016-08-31 2016-12-14 欧阳征标 Non-leakage magnetic optical thin film magnetic surface fast wave optical diode
CN106249443A (en) * 2016-08-31 2016-12-21 欧阳征标 Magneto-optic thin film magnetic surface Fast-wave direction controllable light diode
CN106950198A (en) * 2017-03-03 2017-07-14 电子科技大学 A kind of magneto-optic surface plasma resonance sensor
WO2021005700A1 (en) * 2019-07-09 2021-01-14 日本電信電話株式会社 Semiconductor optical element
CN113764433B (en) * 2020-06-02 2025-02-07 合晶科技股份有限公司 Semiconductor substrate and method for forming the same
CN112596159A (en) * 2020-12-22 2021-04-02 浙江大学绍兴微电子研究中心 Silicon dioxide-based magnetic stripe-shaped optical waveguide with transverse magneto-optical effect
KR20220103537A (en) 2021-01-15 2022-07-22 삼성전자주식회사 Optical isolator and photonic integrated circuit including the same
CN114512893B (en) * 2022-02-16 2024-06-25 中国电子科技集团公司第四十四研究所 Heterogeneous single-chip unidirectional injection-locked semiconductor laser and preparation method thereof
EP4579314A1 (en) * 2023-10-17 2025-07-02 Kyocera Corporation Optical integrated circuit
CN117555168B (en) * 2024-01-09 2024-04-19 之江实验室 On-chip integrated magneto-optical isolator

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3928870A (en) * 1973-12-14 1975-12-23 Eastman Kodak Co Magneto-optical processes and elements using tetrahedrally coordinated divalent cobalt-containing magnetic material
JPS628561A (en) 1985-07-04 1987-01-16 Nec Corp Optical integrated element and manufacture thereof
EP1039330A2 (en) 1999-03-19 2000-09-27 The University of Tokyo Optical waveguide isolator
JP2004240003A (en) 2003-02-04 2004-08-26 Rikogaku Shinkokai Magnetooptic waveguide with silicon waveguide layer and optical nonreciprocal element
US20040223719A1 (en) * 2003-01-02 2004-11-11 Ram Rajeev J. Magnetically active semiconductor waveguides for optoelectronic integration
US7567604B2 (en) * 2005-07-08 2009-07-28 Alcatel Optical device with integrated semi-conductor laser source and integrated optical isolator
JP2010123688A (en) 2008-11-18 2010-06-03 Tokyo Univ Of Agriculture & Technology Integrated optical isolator and method of manufacturing the same

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100670830B1 (en) 2005-12-12 2007-01-19 한국전자통신연구원 Super luminescent diode and manufacturing method thereof
EP2169792B1 (en) 2007-07-17 2018-02-14 QD LASER, Inc. Semiconductor laser and method for manufacturing the same
TW200933223A (en) * 2008-01-31 2009-08-01 Univ Nat Taiwan Method for preparing photonic crystal slab waveguides

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3928870A (en) * 1973-12-14 1975-12-23 Eastman Kodak Co Magneto-optical processes and elements using tetrahedrally coordinated divalent cobalt-containing magnetic material
JPS628561A (en) 1985-07-04 1987-01-16 Nec Corp Optical integrated element and manufacture thereof
EP1039330A2 (en) 1999-03-19 2000-09-27 The University of Tokyo Optical waveguide isolator
JP2000266947A (en) 1999-03-19 2000-09-29 Univ Tokyo Optical isolator
US6208795B1 (en) 1999-03-19 2001-03-27 Sugimura International Patent & Trademark Agency Bureau Optical waveguide isolator
US20040223719A1 (en) * 2003-01-02 2004-11-11 Ram Rajeev J. Magnetically active semiconductor waveguides for optoelectronic integration
JP2004240003A (en) 2003-02-04 2004-08-26 Rikogaku Shinkokai Magnetooptic waveguide with silicon waveguide layer and optical nonreciprocal element
US7567604B2 (en) * 2005-07-08 2009-07-28 Alcatel Optical device with integrated semi-conductor laser source and integrated optical isolator
JP2010123688A (en) 2008-11-18 2010-06-03 Tokyo Univ Of Agriculture & Technology Integrated optical isolator and method of manufacturing the same

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
Espindola et al., "Magneto-optical nonreciprocal phase shift in garnet-silicon-on-insulator waveguides", Optics Letters, vol. 29 No. 9, pp. 941-943 (2004). *
International Search Report for PCT/EP2012/070563 dated Nov. 11, 2012.
Shimizu, H. et al. "Design of semiconductor-waveguide-type optical isolators using the nonreciprocal loss/gain in the magneto-optical waveguides having MnAs nanoclusters" Applied Physics Letters, AIP, American Institute of Physics, Melville, NY vol. 81, No. 27, Dec. 30, 2002.
Shimizu, Hiromasa et al. "Evanescent Semiconductor Active Optical Isolators for Low Insertion Loss and High Gain Saturation Power", Journal of Lightwave Technology, IEEE Service Center, New York, NY. vol. 27, No. 9, May 1, 2010.
Shimizu, Hiromasa et al. "InGaAsP/InP evanescent mode waveguide optical isolators and their application to InGaAsP/InP/Si hybrid evanescent optical isolators" Optical and Quantum Electronics, Kluwer Academic Publishers, vol. 41, No. 9, Mar. 7, 2010.

Also Published As

Publication number Publication date
EP2769445A1 (en) 2014-08-27
TWI491952B (en) 2015-07-11
CN103891068A (en) 2014-06-25
CN103891068B (en) 2016-06-29
KR20140064988A (en) 2014-05-28
JP5873181B2 (en) 2016-03-01
EP2769445B1 (en) 2016-04-13
TW201333582A (en) 2013-08-16
KR101604559B1 (en) 2016-03-17
FR2981803B1 (en) 2016-01-08
FR2981803A1 (en) 2013-04-26
WO2013057138A1 (en) 2013-04-25
US20140247477A1 (en) 2014-09-04
JP2014532980A (en) 2014-12-08

Similar Documents

Publication Publication Date Title
US9106046B2 (en) Integrated optical structure comprising an optical isolator
US9274279B1 (en) Heterogeneous semiconductor photonic integrated circuit with multiple offset heights
US9523816B2 (en) Optical device and manufacturing method therefor
US20100238536A1 (en) Integrated silicon/silicon-germanium magneto-optic isolator
JP2021501462A (en) How to make transverse current injection electro-optic devices, silicon photonic chips and electro-optic devices
US9274272B2 (en) Photonic device and methods of formation
US20230009186A1 (en) Optical Device
US8750666B2 (en) Optical device using a plasmonic waveguide, and optical isolator
GB2585391A (en) Method of fabricating an optoelectronic component
US6025207A (en) Method for manufacture of a buried structure laser device for integrated photonic circuit
US11791341B2 (en) Radio-frequency loss reduction for integrated devices
EP2403077B1 (en) A photonic device and a method of manufacturing a photonic device
CA3034236C (en) Optical modulator
US12541052B2 (en) Semiconductor optical integrated element
Shimizu et al. InGaAsP/InP evanescent mode waveguide optical isolators and their application to InGaAsP/InP/Si hybrid evanescent optical isolators
US6894833B2 (en) Semiconductor optical amplifier
Shimizu et al. Evanescent semiconductor active optical isolators for low insertion loss and high gain saturation power
Shimizu et al. Fabrication and characterization of evanescent semiconductor optical isolators with small gain saturation effect
JP2007155967A (en) Electromagnetic polarization plane rotation device
JP6006158B2 (en) Manufacturing method of light modulation waveguide
Bowers et al. Design of Hybrid Silicon Evanescent Amplifiers
JP2002232083A (en) Optical amplifier
Amemiya et al. High Temperature Operation of TM-mode Nonreciprocal-Loss Waveguide Optical Isolator with Ferromagnetic MnSb

Legal Events

Date Code Title Description
AS Assignment

Owner name: ALCATEL-LUCENT, FRANCE

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:DUAN, GUANG-HUA;BRILLOUET, FRANCOIS;GENTNER, JEAN-LOUIS;SIGNING DATES FROM 20140414 TO 20140416;REEL/FRAME:032860/0674

AS Assignment

Owner name: CREDIT SUISSE AG, NEW YORK

Free format text: SECURITY INTEREST;ASSIGNOR:ALCATEL LUCENT;REEL/FRAME:033500/0302

Effective date: 20140806

AS Assignment

Owner name: ALCATEL LUCENT, FRANCE

Free format text: RELEASE OF SECURITY INTEREST;ASSIGNOR:CREDIT SUISSE AG;REEL/FRAME:033655/0304

Effective date: 20140819

FEPP Fee payment procedure

Free format text: PAYOR NUMBER ASSIGNED (ORIGINAL EVENT CODE: ASPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

STCF Information on status: patent grant

Free format text: PATENTED CASE

MAFP Maintenance fee payment

Free format text: PAYMENT OF MAINTENANCE FEE, 4TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1551); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

Year of fee payment: 4

FEPP Fee payment procedure

Free format text: MAINTENANCE FEE REMINDER MAILED (ORIGINAL EVENT CODE: REM.); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

LAPS Lapse for failure to pay maintenance fees

Free format text: PATENT EXPIRED FOR FAILURE TO PAY MAINTENANCE FEES (ORIGINAL EVENT CODE: EXP.); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

STCH Information on status: patent discontinuation

Free format text: PATENT EXPIRED DUE TO NONPAYMENT OF MAINTENANCE FEES UNDER 37 CFR 1.362

FP Lapsed due to failure to pay maintenance fee

Effective date: 20230811