CN106226925A - Non-leakage magnetic optical thin film magnetic surface fast wave optical diode - Google Patents

Non-leakage magnetic optical thin film magnetic surface fast wave optical diode Download PDF

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Publication number
CN106226925A
CN106226925A CN201610798590.6A CN201610798590A CN106226925A CN 106226925 A CN106226925 A CN 106226925A CN 201610798590 A CN201610798590 A CN 201610798590A CN 106226925 A CN106226925 A CN 106226925A
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thin film
magneto
optic
optical diode
optical
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欧阳征标
郑耀贤
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Priority to PCT/CN2017/099821 priority patent/WO2018041184A1/en
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/09—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on magneto-optical elements, e.g. exhibiting Faraday effect
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/09—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on magneto-optical elements, e.g. exhibiting Faraday effect
    • G02F1/093—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on magneto-optical elements, e.g. exhibiting Faraday effect used as non-reciprocal devices, e.g. optical isolators, circulators
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/09—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on magneto-optical elements, e.g. exhibiting Faraday effect
    • G02F1/095—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on magneto-optical elements, e.g. exhibiting Faraday effect in an optical waveguide structure
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/09—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on magneto-optical elements, e.g. exhibiting Faraday effect
    • G02F1/095—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on magneto-optical elements, e.g. exhibiting Faraday effect in an optical waveguide structure
    • G02F1/0955—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on magneto-optical elements, e.g. exhibiting Faraday effect in an optical waveguide structure used as non-reciprocal devices, e.g. optical isolators, circulators

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Optical Integrated Circuits (AREA)

Abstract

The invention discloses a kind of non-leakage magnetic optical thin film material waveguide magnetic surface fast wave optical diode, it include a light input end mouth, optical output port, magneto-optic thin film, background media, two inhale ripple layers and a bias magnetic field；Described magneto-optic thin film is arranged in background media, described magneto-optic thin film uses magneto-optic memory technique, described optical diode and isolator are made up of magneto-optic memory technique and background media, the left end of described optical diode and isolator is light input end, its right-hand member is light output end, described magneto-optic memory technique is magnetic surface fast wave with the surface of background media, is provided with bias magnetic field at described magneto-optic thin film.The present invention have simple in construction, facilitate implementation, light transmissioning efficiency is high, volume is little, it is simple to integrated, be suitably applied extensive light path integrated, be with a wide range of applications.

Description

Non-leakage magnetic optical thin film magnetic surface fast wave optical diode
Technical field
The present invention relates to a kind of magneto-optic memory technique, surface magnetic wave and optical diode, it is more particularly related to a kind of nothing Magnetic leakage optical thin film magnetic surface fast wave optical diode.
Background technology
Optical diode and isolator are a kind of the optics allowing light to propagate toward a direction, and being applied to prevention need not The light feedback wanted.Traditional optical diode and the major component of isolator are Faraday polarization apparatus, apply Faraday effect (magneto-optic Effect) as its operation principle.Traditional faraday isolator is made up of the polarizer, Faraday polarization apparatus and analyzer.This Device architecture is complicated, method be generally applied in the photosystem of free space.For integrated optical circuit, the Integrated Light device such as optical fiber or waveguide Part is all unpolarized maintenance system, can cause the loss of the angle of polarization, thus inapplicable faraday isolator.
Summary of the invention
It is an object of the invention to overcome weak point of the prior art, it is provided that a kind of simple in construction is effective, and optical transport is imitated Rate is high, and volume is little, it is simple to integrated non-leakage magnetic luminescent material thin film magnetic surface fast wave optical diode.
The purpose of the present invention is achieved by following technical proposals.
Non-leakage magnetic luminescent material thin film magnetic surface fast wave optical diode of the present invention includes that a light input end mouth, a light are defeated Go out port, magneto-optic thin film, background media, a two-layer inhale ripple layer and a bias magnetic field；Described magneto-optic thin film is arranged at background In medium；Described magneto-optic thin film uses magneto-optic memory technique；Described optical diode and isolator are made up of magneto-optic memory technique and background media； The left end of described optical diode and isolator is light input end, and its right-hand member is light output end；Described magneto-optic memory technique and background media Surface be magnetic surface fast wave；It is provided with bias magnetic field at described magneto-optic thin film.
Described magnetic surface fast wave optical diode is arranged in background media by magneto-optic thin film and constitutes.
Described optical diode is made up of fiber waveguide the separating surface of magneto-optic thin film Yu background media can one-way transmission optical signal.
Described magneto-optic thin film is straight wave guide structure with the separating surface of background media；Described straight wave guide is TE mode of operation ripple Lead.
Described magneto-optic memory technique is magneto-optic glass or various rare earth doped garnet and rare earth-transition metal alloy The materials such as thin film.
Described background media material is the material that operating wave is transparent；Described background media material is common dielectric material, sky Gas or glass.
Described suction ripple layer is identical or different absorbing material；Described absorbing material is polyurethane, graphite, Graphene, charcoal Black, carbon fiber epoxy mixture, graphite thermal plastic material mixture, boron fibre epoxy resin mixture, graphite fibre ring Epoxy resins mixture, epoxy polysulfide, silicone rubber, urethane, fluoroelastomer, polyether-ether-ketone, polyether sulfone, polyarylsulfone (PAS) or polyethyleneimine Amine.
It is 1/4 to 1/2 wavelength that said two inhales the ripple layer distance respectively with described straight wave guide surface；Said two inhales ripple The thickness of layer is respectively not less than 1/4 wavelength.
Described bias magnetic field is produced by electric magnet or permanent magnet.
Present invention is suitably applied to extensive light path integrated, be with a wide range of applications.It compared with prior art has There is following good effect.
1. simple in construction, it is simple to realize.
2. light transmissioning efficiency is high.
3. volume is little, it is simple to integrated.
Accompanying drawing explanation
Fig. 1 is the structure chart of non-leakage magnetic optical thin film magnetic surface fast wave optical diode.
In figure: light input end mouth 1 optical output port 2 magneto-optic thin film 3 background media 4 first is inhaled ripple layer 5 second and inhaled ripple layer 6Magneto-optic memory technique film thickness w inhales distance w between ripple layer and waveguide1
Fig. 2 is the one-way conduction fundamental diagram of non-leakage magnetic optical thin film magnetic surface fast wave optical diode.
Fig. 3 is that forward and reverse efficiency of transmission of non-leakage magnetic optical thin film magnetic surface fast wave optical diode changes with frequency of light wave The first embodiment curve chart.
Fig. 4 is that forward and reverse efficiency of transmission of non-leakage magnetic optical thin film magnetic surface fast wave optical diode changes with frequency of light wave The second embodiment curve chart.
Fig. 5 is that forward and reverse efficiency of transmission of non-leakage magnetic optical thin film magnetic surface fast wave optical diode changes with frequency of light wave The third embodiment curve chart.
Detailed description of the invention
With embodiment the present invention further retouched elaboration below in conjunction with the accompanying drawings.
As it is shown in figure 1, non-leakage magnetic optical thin film magnetic surface fast wave optical diode of the present invention include a light input end mouth 1, 2, magneto-optic thin film 3 of one optical output port, background media 4, first are inhaled ripple layer 5, second and are inhaled ripple layer 6 and a bias magnetic field H0；Magnetic surface fast wave optical diode is arranged in background media 4 by magneto-optic memory technique thin film 3 and constitutes, and magneto-optic thin film 3 uses magneto-optic material Material, i.e. magneto-optic memory technique thin film, magneto-optic thin film 3 and background media 4 interface are the region that light energy is mainly concentrated, by magneto-optic memory technique The separating surface of thin film and background media constitute fiber waveguide can one-way transmission optical signal, be optical diode, optical diode and isolation Device is made up of magneto-optic memory technique and background media 4.Magneto-optic memory technique be magneto-optic glass or various rare earth doped garnet and The materials such as rare earth-transition metal alloy thin film；Magneto-optic memory technique thin film 3 is straight wave guide structure with the separating surface of background media 4, this Bright waveguide is TE mode of operation waveguide；Magneto-optic memory technique thin film 3 is magnetic surface fast wave with the surface of background media 4；Medium background Material can use the material that operating wave is transparent, it would however also be possible to employ common dielectric material, air or glass.Magneto-optic memory technique thin film 3 Place is provided withBias magnetic field H0Produced by electric magnet or permanent magnet.As bias magnetic field H0Vertically In paper inwards time, the left end of optical diode and isolator is light input end, and its right-hand member is light output end；Light wave is defeated from port 1 Enter and be output as one-way conduction to port 2；First suction ripple layer 5 and the second suction ripple layer 6 are identical or different absorbing material, inhale ripple material Material is polyurethane, graphite, Graphene, white carbon black, carbon fiber epoxy mixture, graphite thermal plastic material mixture, boron fibre Epoxy resin mixture, graphite fibre epoxy resin mixture, epoxy polysulfide, silicone rubber, urethane, fluoroelastomer, polyether-ether-ketone, Polyether sulfone, polyarylsulfone (PAS) or polymine；First suction ripple layer 5 and the second suction ripple layer 6 can absorb useless ripple, eliminate light path and do Disturb, first inhale ripple layer 5 and second inhale ripple layer 6 respectively with distance w on straight wave guide surface1It it is 1/4 to 1/2 wavelength；Described first Inhale ripple layer 5 and second and inhale the thickness of ripple layer 6 respectively not less than 1/4 wavelength.
Surface magnetic wave produced by magneto-optic memory technique and medium interface is that one is similar to metallic surface plasma excimer (SPP) Phenomenon.Magneto-optic memory technique is under the effect of biasing magnetostatic field, and pcrmeability is tensor form, meanwhile, in certain optical band scope In, its effective refractive index is negative value.Thus, the surface of magneto-optic memory technique can produce a kind of guided wave, and has the property of one way propagation Can, referred to as surface magnetic wave (surface magnetopolaron ripple, SMP).
Non-leakage magnetic luminescent material thin-film waveguide magnetic surface fast wave optical diode of the present invention is had based on magneto-optic memory technique Nonreciprocity, can produce, in conjunction with magneto-optic memory technique-medium interface, the light with excellent properties that the characteristic of surface wave is worked out Diode and isolator.This device provides biasing magnetostatic field by magneto-optic memory technique, and magneto-optic memory technique thin film is arranged at background media material Material neutralizes the combination inhaling ripple layer, utilizes the magnetic surface fast wave that magneto-optic memory technique-medium interface produces to carry out the one-way transmission of light.With Time, inhale ripple layer and absorb useless ripple, eliminate light path interference.
The technical scheme is that the light nonreciprocity being had based on magneto-optic memory technique and magneto-optic memory technique and medium interface institute Have a uniqueness can conduction surfaces wave property, it is achieved optical diode and the design of isolator.The ultimate principle of this technical scheme is such as Under:
Magneto-optic memory technique is a kind of material with magnetic anisotropy, additional magnetostatic field cause the magnetic couple within magneto-optic memory technique Extremely son arranges at same direction, and then produces dipole moment.Strong interaction will be there is in dipole moment with optical signal, and then Produce the nonreciprocity transmission of light.It is the outside bias magnetic field H of vertical paper in direction0Effect under, the magnetic conductance of magneto-optic memory technique Rate tensor is:
[ μ 1 ] = μ r iμ κ 0 - iμ κ μ r 0 0 0 μ 0 , - - - ( 1 )
The matrix element of permeability tensor is given by below equation group:
μ r = μ 0 ( 1 + ω m ( ω 0 - i α ω ) ( ω 0 - i α ω ) 2 - ω 2 ) , μ κ = μ 0 ω m ω ( ω 0 - i α ω ) 2 - ω 2 , ω 0 = μ 0 γH 0 , ω m = μ 0 γM s - - - ( 2 )
Wherein, μ0For the pcrmeability in vacuum, γ is gyromagnetic ratio, H0For externally-applied magnetic field, MsFor saturation magnetization, ω is Operating frequency, α is loss factor.If change bias magnetic field direction be vertical paper inwards, then H0And MsBy reindexing.
Surface magnetic wave produced by magneto-optic memory technique and medium interface then can be according to the permeability tensor of magneto-optic memory technique and wheat Ke Siwei solving equations draws.Meet electric field that surface wave (TE ripple) exists at interface and should there be a following form in magnetic field:
E i = e x i 0 0 e i ( k z z + k y i y - ω t ) , H i = 0 h y i h z i e i ( k z z + k y i y - ω t ) - - - ( 3 )
Wherein i=1 represents magneto-optic memory technique region, and i=2 represents areas of dielectric.Substitution maxwell equation group:
▿ × E i = - j ∂ E x i ∂ z - k ∂ E x i ∂ y = - ∂ B i ∂ t , ▿ × H i = - ∂ D i ∂ t , - - - ( 4 )
Further according to constitutive relationship and boundary condition, wave vector k about surface magnetic wave can be drawnzTranscendental equation:
μ e μ 0 ω 2 μ 0 ϵ 0 - k z 2 + ω 2 μ e ϵ 1 - k z 2 - jμ k μ r k z = 0 , - - - ( 5 )
Wherein,Effective permeability for magneto-optic memory technique.This transcendental equation can be asked by numerical solution Solve, finally give kzValue.Also can find out from equation, owing to equation comprises μκkzItem, so, surface magnetic wave has nonreciprocal Property (one way propagation).
Visible, at magneto-optic memory technique thin film 3, add bias magnetic field H0, and use common dielectric material, air or glass to make For background media material, then effective optical diode will be constituted.As in figure 2 it is shown, use yttrium iron garnet (YIG) each as magnetic Anisotropy material, background media is air (n0=1), the bias magnetic field size of magneto-optic thin film is 900Oe, and bias magnetic field direction is Inwards, the long l=50mm of size of magneto-optic memory technique thin film 3, its thickness w=22.5mm, first inhales ripple layer 5 and second inhales vertical paper The ripple layer 6 distance respectively and between waveguide is w1=5mm, operating frequency f of optical diode is by magneto-optic memory technique and Jie of medium Electric constant ε1, ε2With pcrmeability [μ1], μ2Being determined, operating frequency is f=6GHz, YIG spillage of material factor alpha=3 × 10-4.When Bias magnetic field H0Be perpendicular to paper inwards time, light wave inputs from port 1, produces surface magnetic wave at magneto-optic memory technique-medium interface (single Surface magnetic wave to forward transmission), finally export from output port 2, i.e. port 1 is one-way conduction to port 2；Work as bias magnetic field H0When the vertical paper in direction is outside, when light wave inputs from input port 2, owing to the nonreciprocity of surface magnetic wave causes light wave not Can be in device inside reverse transfer, thus input port 1 does not has any light to export, and light energy is the most all at output port 2 It is blocked.The conducting direction of optical diode and isolator is determined by the direction of externally-applied magnetic field, when the biasing that magneto-optic memory technique is arranged Magnetic direction with foregoing contrary time, its conducting direction is contrary.
Non-leakage magnetic optical thin film magnetic surface fast wave optical diode of the present invention uses magneto-optic memory technique thin film to be arranged at background media In material, dimensions length l of this magneto-optic memory technique thin film is 50mm, and its thickness w is 22.5mm, and the size of magneto-optic memory technique thin film 3 is long Degree l and thickness w can select the most according to the actual requirements.Change size to device performance without big impact.Light two pole Operating frequency f of pipe is by magneto-optic memory technique and the DIELECTRIC CONSTANT ε of medium1, ε2With pcrmeability [μ1], μ2Being determined, operating frequency is f =6GHz, provides three embodiments below in conjunction with the accompanying drawings, uses yttrium iron garnet (YIG) as magnetic anisotropy in an embodiment Material, bias magnetic field size is 900Oe, magnetic direction be vertical paper inwards, magneto-optic memory technique film thickness is w, first inhale ripple Layer 5 and the second suction ripple layer 6 distance respectively and between waveguide are w1=5mm, YIG spillage of material factor alpha=3 × 10-4。
Embodiment 1
With reference to Fig. 1, magnetic surface fast wave optical diode is arranged in background media by magneto-optic memory technique thin film and constitutes, and medium is empty Gas (n0=1), magneto-optic thin film thickness is w=5mm.In working frequency range, the light wave from light input end mouth 1 input will be in device Portion produces surface magnetic wave, and then is exported from light wave port 2 by device；And will be by device institute from the light wave of input port 2 input Stop, it is impossible to export from output port 1.With reference to Fig. 3, the optical diode of straight wave guide structure and the operating frequency range of isolator are 5.00GHz～7.41GHz.In operating frequency range, it is considered to spillage of material, optical diode and isolator are the most forward and reverse Transmission isolation is 29.1dB, is 0.0079dB to transmission insertion loss.
Embodiment 2
With reference to Fig. 1, magnetic surface fast wave optical diode is arranged in background media by magneto-optic memory technique thin film and constitutes, and medium is empty Gas (n0=1), magneto-optic thin film thickness is w=7mm.In working frequency range, the light wave from light input end mouth 1 input will be in device Portion produces surface magnetic wave, and then is exported from output port 2 by device；And will be by device institute from the light wave of input port 2 input Stop, it is impossible to export from output port 1.With reference to Fig. 4, the optical diode of straight wave guide structure and the operating frequency range of isolator are 5.00GHz～7.41GHz.In operating frequency range, it is considered to spillage of material, optical diode and isolator are the most forward and reverse Transmission isolation is 22.1dB, and forward transmission insertion loss is 0.0399dB.
Embodiment 3
With reference to Fig. 1, magnetic surface fast wave optical diode is arranged in background media by magneto-optic memory technique thin film and constitutes, and medium is glass Glass (n0=1.5), magneto-optic thin film thickness is w=5mm.In working frequency range, the light wave from light input end mouth 1 input will be at device The internal surface magnetic wave that produces, and then exported from output port 2 by device；And will be by device from the light wave of input port 2 input Stopped, it is impossible to export from optical output port 1.With reference to Fig. 5, the optical diode of straight wave guide structure and the operating frequency model of isolator Enclosing is 5.00GHz～7.41GHz.In operating frequency range, it is considered to spillage of material, optical diode and isolator are the most just Reverse transfer isolation is 31.0dB, and forward transmission insertion loss is 0.0082dB.
Efficiency of transmission curve chart by the magneto-optic thin film magnetic surface fast wave optical diode of Fig. 3, Fig. 4 and Fig. 5 different parameters can To obtain the light frequency range of magneto-optic thin film waveguide transmitted magnetic surface fast wave, the i.e. operating frequency range of optical diode.From knot Fruit understands, and present invention magnetic surface based on magneto-optic memory technique thin-film waveguide fast wave optical diode can effectively work.
Present invention described above all has improvements in detailed description of the invention and range of application, is not construed as this Bright restriction.

Claims (10)

1. a non-leakage magnetic optical thin film magnetic surface fast wave optical diode, it is characterised in that: it include a light input end mouth, one Individual optical output port, magneto-optic thin film, background media, two inhale ripple layers and a bias magnetic field；Described magneto-optic thin film is arranged In background media；Described magneto-optic thin film uses magneto-optic memory technique；Described optical diode and isolator are situated between by magneto-optic memory technique and background Matter is constituted；The left end of described optical diode and isolator is light input end, and its right-hand member is light output end；Described magneto-optic memory technique and the back of the body The surface of scape medium is magnetic surface fast wave；It is provided with bias magnetic field at described magneto-optic thin film.
2. according to the non-leakage magnetic optical thin film magnetic surface fast wave optical diode described in claim 1, it is characterised in that: described magnetic table Face fast wave optical diode is arranged in background media by magneto-optic thin film and constitutes.
3. according to the non-leakage magnetic optical thin film magnetic surface fast wave optical diode described in claim 1, it is characterised in that: described light two Pole pipe is made up of fiber waveguide the separating surface of magneto-optic thin film Yu background media can one-way transmission optical signal.
4. according to the non-leakage magnetic optical thin film magnetic surface fast wave optical diode described in claim 1, it is characterised in that: described magneto-optic Thin film is straight wave guide structure with the separating surface of background media；Described straight wave guide is TE mode of operation waveguide.
5. according to the non-leakage magnetic optical thin film magnetic surface fast wave optical diode described in claim 1, it is characterised in that: described magneto-optic Material is magneto-optic glass or the material such as various rare earth doped garnet and rare earth-transition metal alloy thin film.
6. according to the non-leakage magnetic optical thin film magnetic surface fast wave optical diode described in claim 1, it is characterised in that: described background Dielectric material is the material that operating wave is transparent.
7. according to the non-leakage magnetic optical thin film magnetic surface fast wave optical diode described in claim 1, it is characterised in that: described background Dielectric material is common dielectric material, air or glass.
8. according to the non-leakage magnetic optical thin film magnetic surface fast wave optical diode described in claim 1, it is characterised in that: described suction ripple Layer is identical or different absorbing material；Described absorbing material is polyurethane, graphite, Graphene, white carbon black, carbon fiber epoxy Mixture, graphite thermal plastic material mixture, boron fibre epoxy resin mixture, graphite fibre epoxy resin mixture, epoxy Polysulfide, silicone rubber, urethane, fluoroelastomer, polyether-ether-ketone, polyether sulfone, polyarylsulfone (PAS) or polymine.
9. according to the non-leakage magnetic optical thin film magnetic surface fast wave optical diode described in claim 1, it is characterised in that: said two Inhaling the ripple layer distance respectively with described straight wave guide surface is 1/4 to 1/2 wavelength；Said two inhales the thickness of ripple layer the most not Less than 1/4 wavelength.
10. according to the non-leakage magnetic optical thin film magnetic surface fast wave optical diode described in claim 1, it is characterised in that: described partially Put magnetic field to be produced by electric magnet or permanent magnet.
CN201610798590.6A 2016-08-31 2016-08-31 Non-leakage magnetic optical thin film magnetic surface fast wave optical diode Pending CN106226925A (en)

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PCT/CN2017/099821 WO2018041184A1 (en) 2016-08-31 2017-08-31 Magnetic surface fast wave photodiode with leakless magneto-optical thin film

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018041184A1 (en) * 2016-08-31 2018-03-08 深圳大学 Magnetic surface fast wave photodiode with leakless magneto-optical thin film
WO2018041181A1 (en) * 2016-08-31 2018-03-08 深圳大学 Magnetic surface fast wave direction-controllable photodiode with magneto-optic thin film
WO2018041183A1 (en) * 2016-08-31 2018-03-08 深圳大学 Magnetic surface fast wave direction-controllable photodiode with leakless magneto-optical thin film

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