US8984354B2 - Test system which shares a register in different modes - Google Patents
Test system which shares a register in different modes Download PDFInfo
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- US8984354B2 US8984354B2 US13/476,026 US201213476026A US8984354B2 US 8984354 B2 US8984354 B2 US 8984354B2 US 201213476026 A US201213476026 A US 201213476026A US 8984354 B2 US8984354 B2 US 8984354B2
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- 238000012360 testing method Methods 0.000 title claims abstract description 72
- 239000008186 active pharmaceutical agent Substances 0.000 description 26
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/1201—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details comprising I/O circuitry
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
- H03M13/00—Coding, decoding or code conversion, for error detection or error correction; Coding theory basic assumptions; Coding bounds; Error probability evaluation methods; Channel models; Simulation or testing of codes
- H03M13/03—Error detection or forward error correction by redundancy in data representation, i.e. code words containing more digits than the source words
- H03M13/05—Error detection or forward error correction by redundancy in data representation, i.e. code words containing more digits than the source words using block codes, i.e. a predetermined number of check bits joined to a predetermined number of information bits
- H03M13/13—Linear codes
- H03M13/15—Cyclic codes, i.e. cyclic shifts of codewords produce other codewords, e.g. codes defined by a generator polynomial, Bose-Chaudhuri-Hocquenghem [BCH] codes
- H03M13/151—Cyclic codes, i.e. cyclic shifts of codewords produce other codewords, e.g. codes defined by a generator polynomial, Bose-Chaudhuri-Hocquenghem [BCH] codes using error location or error correction polynomials
- H03M13/1545—Determination of error locations, e.g. Chien search or other methods or arrangements for the determination of the roots of the error locator polynomial
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C2029/0405—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals comprising complete test loop
Definitions
- the present invention relates to a testing system, and particularly relates to a testing system sharing a register.
- a BIST (Built-In Self Test) circuit is utilized to test an eSRAM (embedded SRAM).
- the data is output from the BIST circuit, stored to a SRAM to be test and then output, such that the SRAM can be determined if it has error or not.
- a pipeline register will be provided at an output terminal of the SRAM, which will only be active while testing SRAM.
- circuit function test will also be performed to the circuit (i.e. scan test). That is, a signal is transmitted from a logic circuit to another logic circuit, to test if any problem for the function of the signal transmitting path and the SRAM exists.
- a passby circuit is provided to isolate the SRAM and the logic circuit to increase test coverage of the logic circuit.
- Such passby circuit includes a register and another logic unit (ex. an XOR gate), and is only activated when the circuit function test is performed. Accordingly, the extra-provided passby circuit register and the pipeline register will increase a large amount of circuit areas.
- One objective of the present invention is to provide a testing system that can save circuit area.
- a testing system which comprises: a BIST circuit, for generating a first signal; a storage apparatus, coupled to the BIST circuit, for storing the first signal to form a second signal; a first logic circuit, coupled to the storage apparatus, for generating a third signal; a second logic circuit, coupled to the storage apparatus; a register, coupled to the storage apparatus and the second logic circuit; and a passby circuit, coupled to the BIST circuit, the first logic circuit and the register.
- the BIST circuit transmits the first signal to the storage apparatus, the storage apparatus outputs the second signal to the register for registering, then the register transmits the registered second signal to the BIST circuit to test the storage apparatus.
- the first logic circuit transmits a third signal to the register for registering, the register transmits the registered third signal to the second logic circuit, to test a transmitting path between the first logic circuit and the second logic circuit, or to test at least one of the first logic circuit and the second logic circuit.
- a testing system which comprises: a BIST circuit, for generating a first signal; a storage apparatus, coupled to the BIST circuit, for storing the first signal to form a second signal; a second logic circuit, coupled to the storage apparatus; a register, coupled to the storage apparatus and the second logic circuit; and passby circuit, coupled to the BIST circuit and the register.
- the BIST circuit transmits the first signal to the storage apparatus, the storage apparatus outputs the second signal to the register for registering, then the register transmits the registered second signal to the BIST circuit to test the storage apparatus.
- the BIST circuit transmits a fourth signal to the register for registering, via the passby circuit, the register transmits the registered fourth signal to the second logic circuit, to test a signal transmitting path between the BIST circuit and the second logic circuit, or to test at least of the BIST circuit and the second logic circuit.
- Still another embodiment of the present application discloses a testing system, which comprises: a first path, for testing a storage apparatus; a second path, for testing a signal transmitting path between a first logic circuit and a second logic circuit, or for testing at least one of the first logic circuit and the second logic circuit; and a register, the first path and the second path sharing the register to respectively register signals for testing.
- the concept disclosed by the present invention can share the same register in two test modes, thereby the circuit area can be decreased. Additionally, the switch circuit including the register can be varied corresponding to different cost and design requirement.
- FIG. 1 illustrates a testing system according to an embodiment of the present application.
- FIG. 2 and FIG. 3 illustrate detail structures of the testing system according to embodiments of the present application.
- FIG. 1 illustrates a testing system according to an embodiment of the present application.
- the testing system 100 includes a BIST circuit 101 , a first logic circuit 103 , an SRAM (also can be other types of storage apparatuses) 105 , a passby circuit 107 , a second logic circuit 109 and a switch circuit 111 .
- a plurality of multiplexers 113 , 115 and 117 can be provided between the first logic circuit 103 and the SRAM 105 to determine the signal transmitting path. It should be noted that the multiplexers 113 , 115 and 117 are respectively utilized to transmit data, control signals and addresses, but do not mean that the testing system of the present application necessarily include three or more multiplexers.
- the BIST circuit 101 transmits a first signal DS 1 to the SRAM 105 in a BIST mode. Also, the SRAM 105 outputs a second signal DS 2 that is formed by storing the first signal DS 1 , to the register 119 for registering. After that, the register 119 transmits the registered second signal to the BIST circuit 101 to test the SRAM 105 .
- the first logic circuit 103 transmits a third signal DS 3 to the register 119 for registering via the passby circuit 107 .
- the register 119 transmits the registered third signal DS 3 to the second logic circuit 109 , to test a signal transmitting path between the first logic circuit 103 and the second logic circuit 109 , or to test at least one of the first logic circuit 103 and the second logic circuit 109 .
- the BIST circuit 101 transmits a fourth signal DS 4 to the register 119 for registering via the passby circuit 107 .
- the register 119 transmits the registered fourth signal DS 4 to the second logic circuit 109 , to test a signal transmitting path between the BIST circuit 101 and the second logic circuit 109 , and/or to test at least one of the BIST circuit 101 and the second logic circuit 109 .
- One example of the BIST mode test mentioned here is transmitting the signal to be test (the second signal DS 2 ) to the BIST circuit 101 and compared to the stored first signal DS 1 , such that it can be acquired if the signal changes after stored to the SRAM and the SRAM can be determined to have issue or not. Such operation can be performed by the comparator (not illustrated) of the BIST circuit 101 .
- a switch circuit 111 is provided for switching between two modes.
- the switch circuit 111 includes the register 119 , and receives the second signal DS 2 and the third signal DS 3 .
- the switch circuit 111 outputs the second signal DS 2 to the BIST circuit 101 , and outputs the third signal DS 3 or the fourth signal DS 4 to the second logic circuit 109 in the scan test mode.
- FIG. 2 and FIG. 3 illustrate detail structures of the testing system according to embodiments of the present application.
- the switch circuit 111 includes two multiplexers 201 , 205 and a register 203 (i.e the register 119 in FIG. 1 ).
- the multiplexer 201 includes a first input terminal 207 coupled to an output of the passby circuit 107 , and has a second input terminal 209 coupled to an output of the SRAM 105 .
- the multiplexer 205 includes a first input terminal 211 coupled to the register 203 , a second input terminal 213 coupled to the output of the multiplexer 201 , and an output terminal 217 coupled to the BIST circuit 101 and the second circuit 109 .
- the BIST circuit 101 transmits the first signal DS 1 to the SRAM 105 , and the SRAM 105 outputs the second signal DS 2 to the second input terminal 209 of the multiplexer 201 .
- the register 203 receives the second signal DS 2 from the multiplexer 201 and transmits the registered second signal DS 2 to the first input terminal 211 of the multiplexer 205 .
- the multiplexer 205 transmits the second signal DS 2 to the BIST circuit 101 .
- the first logic circuit 103 transmits the third signal DS 3 to the passby circuit 107 , or the BIST circuit 101 transmits the fourth signal DS 4 to the passby circuit 107 .
- the passby circuit 107 transmits the third signal DS 3 to the first input terminal 207 of the multiplexer 201 .
- the register 203 receives the third signal DS 3 or the fourth signal DS 4 from the multiplexer 201 , and transmits the registered third signal DS 3 or the fourth signal DS 4 to the first input terminal 211 of the second multiplexer 205 .
- the multiplexer 205 transmits the third signal DS 3 or the fourth signal DS 4 to the second logic circuit 109 .
- the signal path 215 which is from the multiplexer 201 and passes by the register 203 , to the multiplexer 205 , is utilized in a normal state. That is, in the normal state, the signal is from the first logic circuit 103 and transmitted to the SRAM 105 , then passes through the signal path 215 and then transmitted to the second logic circuit 109 . Accordingly, the signal path 215 can be omitted from the embodiment shown in FIG. 2 without affecting above-mentioned function.
- the switch circuit 111 includes a multiplexer 301 , a register 303 and a multiplexer 305 .
- the multiplexer 301 includes a first input terminal 307 coupled to an output of the passby circuit 107 , and has a second input terminal 309 coupled to an output of the SRAM 105 .
- the multiplexer 305 has a first input terminal 311 coupled to the register 303 and the BIST circuit 101 , an output terminal 315 coupled to the second logic circuit 109 , and a second input terminal 313 coupled to an output of the SRAM 105 .
- the BIST circuit 101 transmits a first signal DS 1 to the SRAM 105 , which outputs the second signal DS 2 to the second input terminal 309 of the multiplexer 301 .
- the register 303 receives the second signal DS 2 from the multiplexer 301 and transmits the registered second signal DS 2 to the BIST circuit 101 .
- the first logic circuit 103 transmits the third signal DS 3 to the passby circuit 107
- the BIST circuit 101 transmits the fourth signal DS 4 to the passby circuit 107
- the passby circuit 107 transmits the third signal DS 3 or the fourth signal DS 4 to the first input terminal 307 of the multiplexer 301 .
- the register 303 receives the third signal DS 3 or the fourth signal DS 4 from the multiplexer 301 and transmits the registered the third signal DS 3 or the fourth signal DS 4 to the first input terminal 311 of the multiplexer 305 . Also, the register 303 transmits the registered third signal DS 3 or the fourth signal DS 4 to the second logic circuit 109 .
- the signal path 317 which is from the second input terminal 309 of the multiplexer 301 and passes by the register 303 to the multiplexer 305 , is utilized in the normal state. That is, in the normal state, the signal is from the first logic circuit 103 and transmitted to the SRAM 105 , then passes through the signal path 317 and transmitted to the second logic circuit 109 . Accordingly, the signal path 317 can be omitted from the embodiment shown in FIG. 3 without affecting above-mentioned function.
- the concept disclosed by the present invention can share the same register in two test modes, thereby the circuit area can be decreased. Additionally, the switch circuit including the register can be varied corresponding to different cost and design requirement.
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- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Algebra (AREA)
- General Physics & Mathematics (AREA)
- Pure & Applied Mathematics (AREA)
- Probability & Statistics with Applications (AREA)
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Tests Of Electronic Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (14)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW100118611A | 2011-05-27 | ||
| TW100118611A TWI466124B (en) | 2011-05-27 | 2011-05-27 | Testing system |
| TW100118611 | 2011-05-27 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| US20120304032A1 US20120304032A1 (en) | 2012-11-29 |
| US8984354B2 true US8984354B2 (en) | 2015-03-17 |
Family
ID=47199448
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US13/476,026 Active 2033-03-23 US8984354B2 (en) | 2011-05-27 | 2012-05-21 | Test system which shares a register in different modes |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US8984354B2 (en) |
| CN (1) | CN102800364B (en) |
| TW (1) | TWI466124B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10685730B1 (en) | 2018-03-20 | 2020-06-16 | Seagate Technology Llc | Circuit including efficient clocking for testing memory interface |
| US11170867B2 (en) | 2019-02-21 | 2021-11-09 | Realtek Semiconductor Corporation | Test system |
| US11749374B1 (en) | 2022-02-22 | 2023-09-05 | Winbond Electronics Corp. | Memory device |
| US12158500B2 (en) | 2021-09-17 | 2024-12-03 | Realtek Semiconductor Corp. | System and method which can reduce circuit area while performing test function |
| US12579061B2 (en) | 2024-03-15 | 2026-03-17 | Samsung Electronics Co., Ltd. | Scan register circuit performing fail bit count operation or position search operation and memory device including the same |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111667874B (en) * | 2019-03-05 | 2022-05-24 | 瑞昱半导体股份有限公司 | test system |
| CN109994144B (en) * | 2019-04-23 | 2020-05-26 | 江苏科大亨芯半导体技术有限公司 | SRAM output path time sequence test circuit and test method |
| CN112953562B (en) * | 2019-11-26 | 2024-02-09 | 瑞昱半导体股份有限公司 | Signal processing device and signal processing method |
| CN115078956B (en) * | 2021-03-10 | 2025-08-01 | 瑞昱半导体股份有限公司 | Test circuit |
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| US6574762B1 (en) * | 2000-03-31 | 2003-06-03 | Lsi Logic Corporation | Use of a scan chain for configuration of BIST unit operation |
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2011
- 2011-05-27 TW TW100118611A patent/TWI466124B/en active
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2012
- 2012-03-08 CN CN201210060341.9A patent/CN102800364B/en active Active
- 2012-05-21 US US13/476,026 patent/US8984354B2/en active Active
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10685730B1 (en) | 2018-03-20 | 2020-06-16 | Seagate Technology Llc | Circuit including efficient clocking for testing memory interface |
| US11170867B2 (en) | 2019-02-21 | 2021-11-09 | Realtek Semiconductor Corporation | Test system |
| US12158500B2 (en) | 2021-09-17 | 2024-12-03 | Realtek Semiconductor Corp. | System and method which can reduce circuit area while performing test function |
| US11749374B1 (en) | 2022-02-22 | 2023-09-05 | Winbond Electronics Corp. | Memory device |
| US12579061B2 (en) | 2024-03-15 | 2026-03-17 | Samsung Electronics Co., Ltd. | Scan register circuit performing fail bit count operation or position search operation and memory device including the same |
Also Published As
| Publication number | Publication date |
|---|---|
| US20120304032A1 (en) | 2012-11-29 |
| CN102800364A (en) | 2012-11-28 |
| TW201248638A (en) | 2012-12-01 |
| CN102800364B (en) | 2015-10-21 |
| TWI466124B (en) | 2014-12-21 |
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