US8470680B2 - Substrate with embedded patterned capacitance - Google Patents
Substrate with embedded patterned capacitance Download PDFInfo
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- US8470680B2 US8470680B2 US12/180,768 US18076808A US8470680B2 US 8470680 B2 US8470680 B2 US 8470680B2 US 18076808 A US18076808 A US 18076808A US 8470680 B2 US8470680 B2 US 8470680B2
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Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/16—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
- H05K1/162—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor incorporating printed capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/008—Terminals
- H01G9/012—Terminals specially adapted for solid capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/042—Electrodes or formation of dielectric layers thereon characterised by the material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/042—Electrodes or formation of dielectric layers thereon characterised by the material
- H01G9/045—Electrodes or formation of dielectric layers thereon characterised by the material based on aluminium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/15—Solid electrolytic capacitors
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/032—Materials
- H05K2201/0329—Intrinsically conductive polymer [ICP]; Semiconductive polymer
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/0332—Structure of the conductor
- H05K2201/0335—Layered conductors or foils
- H05K2201/0355—Metal foils
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09209—Shape and layout details of conductors
- H05K2201/095—Conductive through-holes or vias
- H05K2201/09509—Blind vias, i.e. vias having one side closed
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09209—Shape and layout details of conductors
- H05K2201/09654—Shape and layout details of conductors covering at least two types of conductors provided for in H05K2201/09218 - H05K2201/095
- H05K2201/09763—Printed component having superposed conductors, but integrated in one circuit layer
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09818—Shape or layout details not covered by a single group of H05K2201/09009 - H05K2201/09809
- H05K2201/09909—Special local insulating pattern, e.g. as dam around component
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/03—Metal processing
- H05K2203/0315—Oxidising metal
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/42—Plated through-holes or plated via connections
- H05K3/429—Plated through-holes specially for multilayer circuits, e.g. having connections to inner circuit layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/43—Electric condenser making
- Y10T29/435—Solid dielectric type
Definitions
- the present invention is related to an improved method for forming a capacitor. More specifically, the present invention is related to a method for forming a circuit board having capacitors formed therein.
- Capacitors are utilized in virtually every electronic device. Their function in an electronic circuit is well known and further discussion is not warranted herein.
- a second approach to miniaturization is to combine functionality in selected components.
- the real estate represented by the circuit board substrate functions, by and large, as structural support and for connectivity only and it does not otherwise contribute to the electrical function of the electrical circuit.
- Incorporating functionality into the area occupied by the substrate would serve two functions.
- a component which would otherwise be surface mounted, or otherwise incorporated, could be eliminated and the substrate space which is otherwise functionless can be reclaimed. While this is straightforward in theory, actually incorporating the functionality within the substrate has been difficult to implement in many applications. Gains have been made toward incorporating individual capacitors into a circuit substrate, as presented in U.S. Pat. No.
- the present invention is directed to a simple and cost-effective method for incorporating large capacitance into a substrate during manufacture.
- a particular feature of the present invention is a method of manufacturing a capacitor integrated into a substrate.
- a particular advantage of the present invention is the ability to reclaim real estate within an electrical circuit which otherwise provides no contribution to the electronics of the circuit.
- Another advantage of the present invention is the ability to eliminate a surface mounted component by incorporating the function thereof into the substrate or circuit board.
- the process includes the steps of providing a substrate and laminating a conductive foil anode on the substrate, wherein the foil has a dielectric thereon.
- a capacitor is then formed by forming a cathode comprising one or more conductive layers on the dielectric.
- the conductive foil is treated to electrically isolate a region of conductive foil containing the cathode from additional conductive foil. Electrical connections are made between the capacitor cathode and a circuit trace and between the conductive foil anode and a second circuit trace.
- Yet another embodiment is provided in a process for forming a laminate with capacitance.
- the process includes the steps of providing a substrate and laminating a conductive foil on the substrate, wherein the foil acts as a capacitor anode and has a dielectric thereon.
- An isolation dam is applied on the dielectric.
- a cathode comprising one or more conductive layers is formed on the dielectric, wherein the isolation dam circumvents, and preferably circumscribes the at least one conductive layer.
- the conductive foil is treated to electrically isolate a region of conductive foil containing the cathode from additional conductive foil.
- An electrical connection is established between the capacitor cathode and a circuit trace. Electrical connection to the capacitor anode is established by connecting a region of the conductive foil outside the isolation dam to a second circuit trace.
- the layered structure has a first substrate and a conductive foil laminated to the first substrate wherein the conductive foil has a dielectric thereon.
- a cathode is on the dielectric.
- a second substrate forms a layered structure with the conductive foil and cathode between the first substrate and the second substrate.
- a first trace is on at least one of the first substrate and the second substrate and a first via forms an electrical connection between the cathode and the first trace.
- a second trace is on at least one of the first substrate and the second substrate and a second via forms an electrical connection between the conductive foil and the second trace.
- FIG. 1 is a schematic top view illustrating a foil laminated on a substrate.
- FIG. 2 is a schematic top view illustrating a conductive layer formed on the dielectric of a foil.
- FIG. 3 is a schematic cross-sectional side view taken along line 3 - 3 of FIG. 2 .
- FIG. 4 is a schematic top view illustrating additional layers.
- FIG. 5 is a schematic cross-sectional side view taken along line 5 - 5 of FIG. 4 .
- FIG. 6 is a schematic cross-sectional side view of an embodiment of the present invention.
- FIG. 7 is a schematic top view of a foil laminated to a substrate with isolation dams coated thereon.
- FIG. 8 is a schematic cross-sectional side view taken along line 8 - 8 of FIG. 7 .
- FIG. 9 is a schematic top view of an embodiment of the present invention.
- FIG. 10 is a schematic cross-sectional side view taken along line 10 - 10 of FIG. 9 .
- FIG. 11 is a cross-sectional side view of an embodiment of the present invention.
- FIG. 12 is a schematic top view of an embodiment of the present invention.
- FIG. 13 is a cross-sectional side view taken along line 13 - 13 of FIG. 12 .
- FIG. 14 is a cross-sectional side view of an embodiment of the present invention.
- FIG. 15 is a cross-sectional side view of an embodiment of the present invention.
- Described is a process for forming a capacitor which is integral to a printed circuit board or substrate. More specifically, the invention describes a process for manufacturing a printed circuit board, or substrate, with capacitance integral thereto.
- the substrate, with an integral capacitor will be further processed by the incorporation of additional layers to form a completed substrate with a capacitor embedded therein.
- a conductive foil, 12 is attached, adhered, or laminated to an unfinished substrate, 10 .
- the conductive foil comprises a dielectric layer, 13 , formed on at least that surface which is away from the substrate.
- the dielectric layer can be formed after the foil is on the substrate but prior formation is preferred.
- the conductive foil is preferably a valve metal selected from aluminum, tantalum, niobium, titanium or a combination thereof or a conductive oxide such as NbO.
- the conductive foil will ultimately form the anode.
- the dielectric is preferably formed by anodic oxidation of the foil.
- both sides of the foil can contain an oxide layer.
- Metal foil with a single oxide layer is not commercially available under favorable terms, thereby necessitating the use of a foil with both sides oxidized. It is preferred that the surface of the conductive foil is roughened to increase the surface area prior to anodizing to form the oxide dielectric.
- the dielectric can be formed by other methods including vapor deposition, sol-gel applications, and solvent based applications, and may be an oxide of the conductive foil or a different material, such as a ceramic dielectric.
- a solid electrolyte layer, 14 is formed on the exposed dielectric layer, 13 , in regions where the capacitive functionality is desired.
- the solid electrolyte layer may consist of one or more layers of one or more conductive polymers.
- Preferred conductive polymers include polypyrrole, polyaniline, and polythiophene.
- polypyrrole, polyaniline, and polythiophene refer equally to derivatives thereof.
- the conductive polymer may be applied from a solution or suspension or the conductive polymer may be formed in-situ by coating a monomer and oxidizer sequentially.
- In-situ polymer formation from monomer is less preferred due to the complexities of incorporating the process into conventional in-line automated processes since the number of process steps is necessarily increased with in-situ formation. Furthermore, in-situ polymer formation from monomer typically provides a thicker, less dense, polymer layer which is less desirable in most applications.
- the polymer layer is applied by any technique available in the art, without limit, with exemplary methods including ink jet printing, screen-printing, gravure coating, or masked spraying.
- the solid electrolyte layer may comprise a manganese dioxide layer either in addition to a polymer layer or instead of the polymer layer.
- the manganese dioxide layer is preferably formed by applying a solution of a manganese compound, such as manganese nitrate or a permanganate, followed by converting the manganese compound to manganese dioxide by heat. It is preferable that the manganese dioxide layer be deposited prior to deposition of the polymer; however, they can be added as a mixture.
- a manganese compound such as manganese nitrate or a permanganate
- a carbon layer, 16 is preferably applied over the solid electrolyte layer, 14 , as illustrated schematically in top view in FIG. 4 and in schematic cross-sectional view in FIG. 5 taken along line 5 - 5 of FIG. 4 .
- the carbon layer improves adhesion between the solid electrolyte layer, 14 , and subsequent conductive layer, 18 , and is therefore preferred.
- the carbon layer is formed on the patterned surface of the solid electrolyte layer by applying a paste, or thick ink, containing carbon particles preferably in the form of graphite or carbon black.
- the carbon layer can be applied by ink jet printing, screen-printing, gravure printing or by spraying without limit thereto.
- the conductive layer, 18 is a layer which allows formation of a highly conductive connection between the cathode and subsequent circuitry.
- the conductive layer may be silver, copper, gold, or another highly conductive metal or a combination thereof. Particularly preferred is a silver, copper or silver/copper ink or paste.
- the layer may be deposited by ink jet printing, screen printing, gravure printing, spraying, sputtering, atomic layer deposition or other means for applying a thin layer deposition.
- the cathode refers to either the solid electrolyte layer or the combination of the solid electrolyte layer, carbon layer and conductive layer.
- each capacitive couple is preferably isolated from the others by a demarcation, 20 , in the foil, which electrically isolates that portion of the foil acting as the anode and forming a capacitor with the cathode layers from the remaining foil.
- the demarcation can be formed by etching or dicing at least through the oxide layer and the valve metal foil layer. It would be apparent that that the kerf width of the demarcation must be sufficiently wide to avoid current crossing the demarcation.
- the demarcation is illustrated as a narrow strip, it is understood that it may include any or all of the foil which is not functioning as the anode of a capacitor with the understanding that a sufficient area of foil is removed to avoid current flow from the anode portion to surrounding functioning foil.
- a width of about 0.025 mm is sufficient. However, 0.05 mm is more preferable.
- foil may remain in the finished substrate, wherein the remaining foil provides either no electrical function or functions as a component in an element other than a capacitor.
- windows and holes may be created in the foil base before application of the foil to the semi-finished substrate, or these areas may be removed subsequent to the application. The holes or windows will allow vias and plated through holes to pass through this layer without connection to any of the capacitive elements and will facilitate registration of the foil during the lamination process.
- the conductive foil may remain intact between capacitors, thereby ultimately forming multiple capacitors with a common anode. Ground and power connections could then be established between at least two of the multiple cathodes without connecting to the conductive foil anode, comprising a capacitor device connected in a non-polar configuration.
- This could allow greater flexibility in the design of a circuit substrate in that an embedded capacitance layer with a given isolation dam and cathode application pattern could be utilized for more than one circuit substrate design.
- the isolation dam is a non-conductive region formed by treating the conductive material to render it non-conductive.
- a functional capacitor or multiple capacitors, is provided on a substrate and the substrate may be suitable for use in some applications.
- the demarcations may completely sever one or more functional capacitors mounted on a substrate from the larger substrate for use.
- further processing ensues to prepare a printed circuit board with capacitance incorporated therein.
- additional circuit board material, 21 it is preferable to apply, preferably by lamination, additional circuit board material, 21 , over the capacitor and semi-finished substrate, thereby forming the embedded capacitance or an embedded capacitor within the substrate material.
- the additional circuit board layers are applied by any technique known in the art and standard materials are suitable for use therein. After lamination, and in the course of forming additional layers of the circuit board material, the anode and cathode terminals of the capacitor must be accessed for connection to eventual circuit traces on the circuit board.
- the connectivity among layers is preferably made with a blind via or a through hole, both of which will be described, while traces of conductive material (i.e. copper) afford connection to multiple areas at each layer.
- traces of conductive material i.e. copper
- a cathodic blind via, 22 is formed directly above the cathode region of the capacitor. This allows a conductor to be brought into electrical contact with both the cathode and a cathodic circuit trace, 24 , which may be at least temporarily on the surface of the circuit substrate.
- An anodic blind via, 26 is formed which is in electrical contact with the conductive foil forming the anode interior to the demarcation relative to the capacitive couple. The anodic blind via allows a conductor therein to form an electrical contact between the anode and an anode circuit trace, 28 .
- An anodic through via, 30 passing through the entire substrate, is in electrical contact with the anode interior to the demarcation relative to the capacitive couple and is then in electrical contact with at least one anodic trace, 32 , on a surface of the circuit substrate. It would be apparent that additional laminations may occur such that the traces described are ultimately interior to a layered circuit board.
- FIGS. 7-11 Another embodiment will be described with reference to FIGS. 7-11 .
- the substrate, 10 , foil, 12 , and dielectric, 13 are as described above.
- An isolation dam, 40 is formed on the surface of the dielectric.
- the interior area of the dam is the shape and size of the intended cathode and the isolation dam circumvents the cathode.
- the isolation dam prior to formation of a cathode is illustrated in top schematic view in FIG. 7 and cross-sectional schematic view in FIG. 8 taken along line 8 - 8 of FIG. 7 .
- a solid electrolyte and optional but preferred carbon and conductive layers are formed within the area of the isolation dam to form the cathode of a capacitor.
- the resulting capacitor is illustrated in top schematic view in FIG. 9 and in schematic cross-sectional view in FIG. 10 taken along line 10 - 10 of FIG. 9 .
- the isolation dam, 40 forms a pool within which the cathode, 42 , is coated.
- an optional but preferred metal layer, 44 is formed and the capacitors are singulated.
- the substrate is diced along a line, 46 , to isolate one or more discrete capacitor(s) on a substrate.
- the line, 46 represents a demarcation line wherein the conductive foil is interrupted between capacitors to electrically isolate discrete capacitors on a common substrate or to form discrete capacitors with a common anode.
- the demarcation can represent a narrow band which is sufficiently wide for electrical isolation, or a portion, up to the entire foil not otherwise functioning as the anode of a capacitor, can be removed.
- FIG. 11 A particularly preferred embodiment is illustrated schematically after further processing in FIG. 11 . Shown therein is additional circuit board material, 41 , laminated over the capacitor. As would be apparent, electrical connectivity must be made between the capacitor and traces for the function of the capacitor to be realized in an electrical circuit. Illustrated in FIG. 11 are blind vias, 48 , primarily for the cathodic couple, wherein the cathode is in electrical contact with a cathode trace, 50 . Through vias, 52 , are preferably formed through the isolation dam, 40 , such that the isolation dam forms a sleeve with the through via therein.
- a conductor dispensed in the through via forms an electrical connection between the conductive foil, which functions as the anode, and an anode trace, 54 , on at least one side of the laminated device. It would be apparent from the figure that a blind via through the isolation dam could also be utilized, wherein the blind via does not pass entirely through the structure but only through to the extent necessary to be in electrical contact with the conductive foil anode.
- FIGS. 12 and 13 An embodiment of the present invention is illustrated in schematic top view in FIG. 12 and schematic cross-sectional view in FIG. 13 taken along line 13 - 13 of FIG. 12 .
- a substrate, 126 has a foil laminated thereon.
- the foil comprises a first conductive layer, 128 , such as a metal foil, and dielectric, 130 .
- a cathode comprising a solid electrolyte, 134 , and a second conductive layer, 136 , is formed on the dielectric, such that the cathode and foil form a capacitive couple with the dielectric therebetween.
- the capacitive couple is isolated electrically by demarcations, 132 .
- An isolation dam, 122 provides a via location for connection to the anode which is isolated from the remaining foil by the demarcation.
- a second isolation dam, 138 is provided wherein a through hole, 238 , is ultimately formed for additional functionality.
- FIG. 14 An additional embodiment of the present invention is illustrated in schematic cross-sectional side view in FIG. 14 .
- the substrate, 126 , first conductive layer, 128 , dielectric, 130 , demarcation, 132 , solid electrolyte layer, 134 , isolation dam, 122 , and second isolation dam, 138 are as described with reference to FIGS. 12 and 13 .
- additional lamination, 140 has been added to encase the capacitor elements, thereby forming a laminated substrate with embedded capacitance.
- An anodic via, 144 illustrated as a blind via, is in the first isolation dam, 122 .
- a second via, 142 illustrated as a through via, is formed in the second isolation dam, 138 .
- the second via can be utilized to form electrical connectivity with the foil which may, or may not, be utilized in the capacitance functionality of the substrate.
- a substrate, 150 has a metal foil, 152 and 154 , coated thereon, wherein the metal foil has a conductive metal, 152 , and a dielectric, 154 .
- An isolation dam, 156 is applied on the dielectric.
- a via, 156 preferably a through via, is formed through the isolation dam, 162 , wherein the via is larger than ultimately desired.
- the via is preferably coated with a dielectric, 170 .
- the via is then redrilled and filled with a conductive material, 160 , The via is reformed with a smaller size than the previous via thereby forming a second via.
- the result is a via, 158 , with a collar therein.
- the material can be a conductive material, such as copper, thereby forming a through via with a conductive sleeve therein.
- the material, 160 can be an insulator material thereby forming an insulative collar.
- a particular feature of the present invention is the ability to form a capacitor with thin layers which would otherwise be difficult to manufacture.
- Capacitive elements with a thickness of less than 250 ⁇ m as measured from the cathode face to the opposing anode face can easily be formed with the present invention.
- the ability to manufacture a capacitor with thin active layers increases the capacitive volume which is an ongoing desire in capacitor manufacture.
- the present invention allows for the manufacture of a capacitor, being the anode, dielectric and cathode, of about 10 ⁇ m to about 250 ⁇ m thick. More preferably, the present invention allows for the manufacture of capacitors which are less than 100 ⁇ m and more preferably less than 50 ⁇ m.
- the printed circuit layers may be formed of commonly used printed circuit board materials such as FR-4, but the present invention is compatible with most available multi-layer printed circuit materials.
- each subsequent layer is slightly smaller than the previous layer such that the surface projection of each layer leaves a frame from the previous layer in a “wedding cake” arrangement.
- This is preferred for manufacturing simplicity since it would be extremely difficult to coat a subsequent layer with the exact area of the underlying area without some material dripping down the edge of the stacked layers. Obviously, it is desirable to have as much surface area of capacitance as possible without sacrificing losses due to a subsequent layer not being isolated to the surface.
- the substrate is not particularly limited for demonstrating the invention.
- Particularly suitable substrates include copper, copper-coated circuit substrates such as FR-4, polyimide, phenolic, BT, and various Rogers high performance materials such as TMM, etc.
- Glass reinforced polymer is a particularly preferred substrate.
- anode and cathode refer to the two conductive layers separated by a dielectric thereby forming a capacitive couple.
- the anode refers to the metal foil and the cathode refers to the conductive layer formed on the dielectric of the anode foil.
- the anode is the positive terminal and the cathode is the negative terminal yet this could be reversed if contained within the lowered stress limit, without detriment and without departing from the meets and bounds of the instant invention.
- the isolation dam is a non-conductive material capable of being applied to a surface and forming a raised barrier thereon.
- the material is preferably applied as a thixotropic material.
- Particularly preferred isolation dam materials include polyimides, silicones, and epoxies.
- through vias and through holes are defined as vias which go through all layers in place at the time of via formation.
- a blind via is a via which goes through less than all of the layers in place at the time of via formation.
- Dice cutting refers to a cutting operation which separates discrete capacitors from the carrier or from each other and may be a complete severing or only be partially through the device. Exemplary methods include routing, saw dicing, blade dicing, water jet cutting, laser cutting, chemical etching, selective heating, laser ablation and the like.
- the foil is laminated to the substrate preferably using an adhesive.
- adhesives include polyimides, epoxies, and acrylates.
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Abstract
Description
Claims (21)
Priority Applications (6)
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US12/180,768 US8470680B2 (en) | 2008-07-28 | 2008-07-28 | Substrate with embedded patterned capacitance |
EP09803461.4A EP2313900B1 (en) | 2008-07-28 | 2009-07-28 | Substrate with embedded patterned capacitance |
CN2009801293685A CN102105955A (en) | 2008-07-28 | 2009-07-28 | Substrate with embedded patterned capacitance |
PCT/US2009/051919 WO2010014580A2 (en) | 2008-07-28 | 2009-07-28 | Substrate with embedded patterned capacitance |
US13/345,227 US8410536B2 (en) | 2008-07-28 | 2012-01-06 | Substrate with embedded patterned capacitance |
US13/409,424 US8652920B2 (en) | 2008-07-28 | 2012-03-01 | Substrate with embedded patterned capacitance |
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US12/180,768 US8470680B2 (en) | 2008-07-28 | 2008-07-28 | Substrate with embedded patterned capacitance |
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US13/345,227 Division US8410536B2 (en) | 2008-07-28 | 2012-01-06 | Substrate with embedded patterned capacitance |
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US8470680B2 true US8470680B2 (en) | 2013-06-25 |
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US13/345,227 Active US8410536B2 (en) | 2008-07-28 | 2012-01-06 | Substrate with embedded patterned capacitance |
US13/409,424 Active US8652920B2 (en) | 2008-07-28 | 2012-03-01 | Substrate with embedded patterned capacitance |
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US13/409,424 Active US8652920B2 (en) | 2008-07-28 | 2012-03-01 | Substrate with embedded patterned capacitance |
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EP (1) | EP2313900B1 (en) |
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Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8568456B2 (en) | 2009-09-21 | 2013-10-29 | Globus Medical, Inc. | Transverse connector having a locking element for capturing multiple rods |
US9123780B2 (en) * | 2012-12-19 | 2015-09-01 | Invensas Corporation | Method and structures for heat dissipating interposers |
WO2014127236A1 (en) | 2013-02-14 | 2014-08-21 | Kemet Electronics Corporation | One-sided capacitor foils and methods of making one-sided capacitor foils |
US9558390B2 (en) * | 2014-07-25 | 2017-01-31 | Qualcomm Incorporated | High-resolution electric field sensor in cover glass |
TWI546834B (en) * | 2014-10-28 | 2016-08-21 | 鈺邦科技股份有限公司 | Chip solid electrolytic capacitor and manufacturing method thereof |
US9767962B2 (en) * | 2016-01-22 | 2017-09-19 | Micron Technology, Inc. | Apparatuses, multi-chip modules and capacitive chips |
US10978403B2 (en) | 2019-01-30 | 2021-04-13 | Delta Electronics, Inc. | Package structure and method for fabricating the same |
WO2018236784A1 (en) * | 2017-06-19 | 2018-12-27 | Industrial Heat, Llc | Exothermic reaction electrode structure using pcb and semiconductor fabrication methods |
US11943869B2 (en) | 2020-02-04 | 2024-03-26 | Kemet Electronics Corporation | Electrically functional circuit board core material |
MX2022009752A (en) * | 2020-02-06 | 2023-01-11 | Saras Micro Devices Inc | Planar high-density aluminum capacitors for stacking and embedding. |
US11631549B2 (en) | 2020-07-30 | 2023-04-18 | Medtronic, Inc. | Electrical component and method of forming same |
US12070609B2 (en) | 2020-07-30 | 2024-08-27 | Medtronic, Inc. | Electrical component and method of forming same |
US11756741B2 (en) * | 2020-07-30 | 2023-09-12 | Medtronic, Inc. | Electrical component and method of forming same |
Citations (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6246569B1 (en) | 1997-11-12 | 2001-06-12 | Pacesetter, Inc. | Electrolytic capacitor and method of manufacturing |
US20010026444A1 (en) | 2000-01-21 | 2001-10-04 | Naoki Matsushima | Electronic circuit board with built-in thin film capacitor and manufacturing method thereof |
US6462935B1 (en) | 2001-09-07 | 2002-10-08 | Lih-Ren Shiue | Replaceable flow-through capacitors for removing charged species from liquids |
US6571126B1 (en) | 2000-11-03 | 2003-05-27 | Cardiac Pacemakers, Inc. | Method of constructing a capacitor stack for a flat capacitor |
US6628505B1 (en) | 2000-07-29 | 2003-09-30 | Biosource, Inc. | Flow-through capacitor, system and method |
US20030182781A1 (en) | 2001-07-17 | 2003-10-02 | Katsumasa Miki | Production method for solid electrolytic capacitor |
US6657849B1 (en) | 2000-08-24 | 2003-12-02 | Oak-Mitsui, Inc. | Formation of an embedded capacitor plane using a thin dielectric |
US20050013088A1 (en) * | 2003-07-14 | 2005-01-20 | Yasuyoshi Horikawa | Capacitor device and method of manufacturing the same |
US6865071B2 (en) | 1998-03-03 | 2005-03-08 | Acktar Ltd. | Electrolytic capacitors and method for making them |
US6979854B2 (en) * | 2002-10-04 | 2005-12-27 | Shinko Electric Industries Co., Ltd. | Thin-film capacitor device, mounting module for the same, and method for fabricating the same |
US7126811B2 (en) | 2002-12-27 | 2006-10-24 | Matsushita Electric Industrial Co., Ltd. | Capacitor and method for producing the same, and circuit board with a built-in capacitor and method for producing the same |
US7138068B2 (en) * | 2005-03-21 | 2006-11-21 | Motorola, Inc. | Printed circuit patterned embedded capacitance layer |
US7193838B2 (en) * | 2003-12-23 | 2007-03-20 | Motorola, Inc. | Printed circuit dielectric foil and embedded capacitors |
US20070159771A1 (en) * | 2004-07-22 | 2007-07-12 | Nec Tokin Corporation | Solid electrolytic capacitor, stacked capacitor using the same, and fabrication method thereof |
US7317610B2 (en) * | 2004-11-16 | 2008-01-08 | Nec Toppan Circuit Solutions, Inc. | Sheet-shaped capacitor and method for manufacture thereof |
EP1890329A1 (en) | 2005-07-13 | 2008-02-20 | Matsushita Electric Industrial Co., Ltd. | Mounted board, mounted body, and electronic device using same |
US20080216296A1 (en) * | 2007-03-07 | 2008-09-11 | Prymak John D | Thin solid electrolytic capacitor embeddable in a substrate |
US7485411B2 (en) | 2006-02-01 | 2009-02-03 | Samsung Electro-Mechanics Co., Ltd. | Method for manufacturing printed circuit board with thin film capacitor embedded therein |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US182781A (en) * | 1876-10-03 | Improvement in steam-heaters | ||
NL7413380A (en) | 1974-10-11 | 1976-04-13 | Philips Nv | PROCESS FOR THE MANUFACTURE OF SOLID CONDENSERS. |
US7100277B2 (en) * | 2004-07-01 | 2006-09-05 | E. I. Du Pont De Nemours And Company | Methods of forming printed circuit boards having embedded thick film capacitors |
US7741189B2 (en) * | 2005-06-20 | 2010-06-22 | E.I. Du Pont De Nemours And Company | Electrodes, inner layers, capacitors, electronic devices and methods of making thereof |
KR100714580B1 (en) * | 2005-11-03 | 2007-05-07 | 삼성전기주식회사 | Method for manufacturing a thin film capacitor embedded printed circuit board, and printed circuited board obtained therefrom |
JP4738299B2 (en) * | 2006-09-20 | 2011-08-03 | 富士通株式会社 | Capacitor, manufacturing method thereof, and electronic substrate |
-
2008
- 2008-07-28 US US12/180,768 patent/US8470680B2/en active Active
-
2009
- 2009-07-28 EP EP09803461.4A patent/EP2313900B1/en active Active
- 2009-07-28 CN CN2009801293685A patent/CN102105955A/en active Pending
- 2009-07-28 WO PCT/US2009/051919 patent/WO2010014580A2/en active Application Filing
-
2012
- 2012-01-06 US US13/345,227 patent/US8410536B2/en active Active
- 2012-03-01 US US13/409,424 patent/US8652920B2/en active Active
Patent Citations (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6246569B1 (en) | 1997-11-12 | 2001-06-12 | Pacesetter, Inc. | Electrolytic capacitor and method of manufacturing |
US6865071B2 (en) | 1998-03-03 | 2005-03-08 | Acktar Ltd. | Electrolytic capacitors and method for making them |
US20010026444A1 (en) | 2000-01-21 | 2001-10-04 | Naoki Matsushima | Electronic circuit board with built-in thin film capacitor and manufacturing method thereof |
US6628505B1 (en) | 2000-07-29 | 2003-09-30 | Biosource, Inc. | Flow-through capacitor, system and method |
US6657849B1 (en) | 2000-08-24 | 2003-12-02 | Oak-Mitsui, Inc. | Formation of an embedded capacitor plane using a thin dielectric |
US6571126B1 (en) | 2000-11-03 | 2003-05-27 | Cardiac Pacemakers, Inc. | Method of constructing a capacitor stack for a flat capacitor |
US20030182781A1 (en) | 2001-07-17 | 2003-10-02 | Katsumasa Miki | Production method for solid electrolytic capacitor |
US6462935B1 (en) | 2001-09-07 | 2002-10-08 | Lih-Ren Shiue | Replaceable flow-through capacitors for removing charged species from liquids |
US6979854B2 (en) * | 2002-10-04 | 2005-12-27 | Shinko Electric Industries Co., Ltd. | Thin-film capacitor device, mounting module for the same, and method for fabricating the same |
US7126811B2 (en) | 2002-12-27 | 2006-10-24 | Matsushita Electric Industrial Co., Ltd. | Capacitor and method for producing the same, and circuit board with a built-in capacitor and method for producing the same |
US20050013088A1 (en) * | 2003-07-14 | 2005-01-20 | Yasuyoshi Horikawa | Capacitor device and method of manufacturing the same |
US7193838B2 (en) * | 2003-12-23 | 2007-03-20 | Motorola, Inc. | Printed circuit dielectric foil and embedded capacitors |
US20070159771A1 (en) * | 2004-07-22 | 2007-07-12 | Nec Tokin Corporation | Solid electrolytic capacitor, stacked capacitor using the same, and fabrication method thereof |
US7317610B2 (en) * | 2004-11-16 | 2008-01-08 | Nec Toppan Circuit Solutions, Inc. | Sheet-shaped capacitor and method for manufacture thereof |
US7138068B2 (en) * | 2005-03-21 | 2006-11-21 | Motorola, Inc. | Printed circuit patterned embedded capacitance layer |
EP1890329A1 (en) | 2005-07-13 | 2008-02-20 | Matsushita Electric Industrial Co., Ltd. | Mounted board, mounted body, and electronic device using same |
US7485411B2 (en) | 2006-02-01 | 2009-02-03 | Samsung Electro-Mechanics Co., Ltd. | Method for manufacturing printed circuit board with thin film capacitor embedded therein |
US20080216296A1 (en) * | 2007-03-07 | 2008-09-11 | Prymak John D | Thin solid electrolytic capacitor embeddable in a substrate |
Non-Patent Citations (2)
Title |
---|
Extended European Search Report, EP09803461.4, Nov. 24, 2011, Darek Pacholec. |
International Preliminary Report on Patentability and Written Opinion of the International Searching Authority, Beate Giffo-Schmitt, PCT/US2009/-51919, Feb. 1, 2011. |
Also Published As
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US8410536B2 (en) | 2013-04-02 |
WO2010014580A3 (en) | 2010-04-15 |
EP2313900B1 (en) | 2021-03-24 |
US8652920B2 (en) | 2014-02-18 |
US20100020473A1 (en) | 2010-01-28 |
EP2313900A2 (en) | 2011-04-27 |
EP2313900A4 (en) | 2011-12-28 |
WO2010014580A2 (en) | 2010-02-04 |
US20120106032A1 (en) | 2012-05-03 |
US20120162857A1 (en) | 2012-06-28 |
CN102105955A (en) | 2011-06-22 |
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