US8470680B2 - Substrate with embedded patterned capacitance - Google Patents

Substrate with embedded patterned capacitance Download PDF

Info

Publication number
US8470680B2
US8470680B2 US12/180,768 US18076808A US8470680B2 US 8470680 B2 US8470680 B2 US 8470680B2 US 18076808 A US18076808 A US 18076808A US 8470680 B2 US8470680 B2 US 8470680B2
Authority
US
United States
Prior art keywords
conductive
forming
laminate
substrate
foil
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active, expires
Application number
US12/180,768
Other versions
US20100020473A1 (en
Inventor
John D. Prymak
Chris Stolarski
Alethia Melody
Antony P. Chacko
Gregory J. Dunn
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kemet Electronics Corp
Motorola Solutions Inc
Original Assignee
Kemet Electronics Corp
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kemet Electronics Corp, Motorola Inc filed Critical Kemet Electronics Corp
Assigned to MOTOROLA, INC. reassignment MOTOROLA, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: DUNN, GREGORY J
Priority to US12/180,768 priority Critical patent/US8470680B2/en
Assigned to KEMET ELECTRONICS CORPORATION reassignment KEMET ELECTRONICS CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CHACKO, ANTONY P, MELODY, ALETHIA, PRYMAK, JOHN D, STOLARSKI, CHRIS
Assigned to K FINANCING, LLC reassignment K FINANCING, LLC SECURITY AGREEMENT Assignors: KEMET CORPORATION
Priority to PCT/US2009/051919 priority patent/WO2010014580A2/en
Priority to EP09803461.4A priority patent/EP2313900B1/en
Priority to CN2009801293685A priority patent/CN102105955A/en
Publication of US20100020473A1 publication Critical patent/US20100020473A1/en
Assigned to KEMET CORPORATION reassignment KEMET CORPORATION RELEASE OF SECURITY INTEREST RECORDED AT REEL/FRAME 022892/0795 Assignors: K FINANCING, LLC
Assigned to BANK OF AMERICA, N.A. AS AGENT reassignment BANK OF AMERICA, N.A. AS AGENT SECURITY INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: KEMET ELECTRONICS CORPORATION
Assigned to MOTOROLA SOLUTIONS, INC. reassignment MOTOROLA SOLUTIONS, INC. CHANGE OF NAME (SEE DOCUMENT FOR DETAILS). Assignors: MOTOROLA, INC.
Priority to US13/345,227 priority patent/US8410536B2/en
Priority to US13/409,424 priority patent/US8652920B2/en
Publication of US8470680B2 publication Critical patent/US8470680B2/en
Application granted granted Critical
Assigned to BANK OF AMERICA, N.A., AS COLLATERAL AGENT reassignment BANK OF AMERICA, N.A., AS COLLATERAL AGENT SECURITY AGREEMENT Assignors: KEMET BLUE POWDER CORPORATION, KEMET CORPORATION, KEMET ELECTRONICS CORPORATION
Assigned to KEMET BLUE POWDER CORPORATION, KEMET ELECTRONICS CORPORATION, KEMET CORPORATION, reassignment KEMET BLUE POWDER CORPORATION RELEASE BY SECURED PARTY (SEE DOCUMENT FOR DETAILS). Assignors: BANK OF AMERICA, N.A.
Active legal-status Critical Current
Adjusted expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/16Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
    • H05K1/162Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor incorporating printed capacitors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004Details
    • H01G9/008Terminals
    • H01G9/012Terminals specially adapted for solid capacitors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004Details
    • H01G9/04Electrodes or formation of dielectric layers thereon
    • H01G9/042Electrodes or formation of dielectric layers thereon characterised by the material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004Details
    • H01G9/04Electrodes or formation of dielectric layers thereon
    • H01G9/042Electrodes or formation of dielectric layers thereon characterised by the material
    • H01G9/045Electrodes or formation of dielectric layers thereon characterised by the material based on aluminium
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/15Solid electrolytic capacitors
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03Conductive materials
    • H05K2201/032Materials
    • H05K2201/0329Intrinsically conductive polymer [ICP]; Semiconductive polymer
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03Conductive materials
    • H05K2201/0332Structure of the conductor
    • H05K2201/0335Layered conductors or foils
    • H05K2201/0355Metal foils
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09Shape and layout
    • H05K2201/09209Shape and layout details of conductors
    • H05K2201/095Conductive through-holes or vias
    • H05K2201/09509Blind vias, i.e. vias having one side closed
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09Shape and layout
    • H05K2201/09209Shape and layout details of conductors
    • H05K2201/09654Shape and layout details of conductors covering at least two types of conductors provided for in H05K2201/09218 - H05K2201/095
    • H05K2201/09763Printed component having superposed conductors, but integrated in one circuit layer
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09Shape and layout
    • H05K2201/09818Shape or layout details not covered by a single group of H05K2201/09009 - H05K2201/09809
    • H05K2201/09909Special local insulating pattern, e.g. as dam around component
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/03Metal processing
    • H05K2203/0315Oxidising metal
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/40Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/42Plated through-holes or plated via connections
    • H05K3/429Plated through-holes specially for multilayer circuits, e.g. having connections to inner circuit layers
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/43Electric condenser making
    • Y10T29/435Solid dielectric type

Definitions

  • the present invention is related to an improved method for forming a capacitor. More specifically, the present invention is related to a method for forming a circuit board having capacitors formed therein.
  • Capacitors are utilized in virtually every electronic device. Their function in an electronic circuit is well known and further discussion is not warranted herein.
  • a second approach to miniaturization is to combine functionality in selected components.
  • the real estate represented by the circuit board substrate functions, by and large, as structural support and for connectivity only and it does not otherwise contribute to the electrical function of the electrical circuit.
  • Incorporating functionality into the area occupied by the substrate would serve two functions.
  • a component which would otherwise be surface mounted, or otherwise incorporated, could be eliminated and the substrate space which is otherwise functionless can be reclaimed. While this is straightforward in theory, actually incorporating the functionality within the substrate has been difficult to implement in many applications. Gains have been made toward incorporating individual capacitors into a circuit substrate, as presented in U.S. Pat. No.
  • the present invention is directed to a simple and cost-effective method for incorporating large capacitance into a substrate during manufacture.
  • a particular feature of the present invention is a method of manufacturing a capacitor integrated into a substrate.
  • a particular advantage of the present invention is the ability to reclaim real estate within an electrical circuit which otherwise provides no contribution to the electronics of the circuit.
  • Another advantage of the present invention is the ability to eliminate a surface mounted component by incorporating the function thereof into the substrate or circuit board.
  • the process includes the steps of providing a substrate and laminating a conductive foil anode on the substrate, wherein the foil has a dielectric thereon.
  • a capacitor is then formed by forming a cathode comprising one or more conductive layers on the dielectric.
  • the conductive foil is treated to electrically isolate a region of conductive foil containing the cathode from additional conductive foil. Electrical connections are made between the capacitor cathode and a circuit trace and between the conductive foil anode and a second circuit trace.
  • Yet another embodiment is provided in a process for forming a laminate with capacitance.
  • the process includes the steps of providing a substrate and laminating a conductive foil on the substrate, wherein the foil acts as a capacitor anode and has a dielectric thereon.
  • An isolation dam is applied on the dielectric.
  • a cathode comprising one or more conductive layers is formed on the dielectric, wherein the isolation dam circumvents, and preferably circumscribes the at least one conductive layer.
  • the conductive foil is treated to electrically isolate a region of conductive foil containing the cathode from additional conductive foil.
  • An electrical connection is established between the capacitor cathode and a circuit trace. Electrical connection to the capacitor anode is established by connecting a region of the conductive foil outside the isolation dam to a second circuit trace.
  • the layered structure has a first substrate and a conductive foil laminated to the first substrate wherein the conductive foil has a dielectric thereon.
  • a cathode is on the dielectric.
  • a second substrate forms a layered structure with the conductive foil and cathode between the first substrate and the second substrate.
  • a first trace is on at least one of the first substrate and the second substrate and a first via forms an electrical connection between the cathode and the first trace.
  • a second trace is on at least one of the first substrate and the second substrate and a second via forms an electrical connection between the conductive foil and the second trace.
  • FIG. 1 is a schematic top view illustrating a foil laminated on a substrate.
  • FIG. 2 is a schematic top view illustrating a conductive layer formed on the dielectric of a foil.
  • FIG. 3 is a schematic cross-sectional side view taken along line 3 - 3 of FIG. 2 .
  • FIG. 4 is a schematic top view illustrating additional layers.
  • FIG. 5 is a schematic cross-sectional side view taken along line 5 - 5 of FIG. 4 .
  • FIG. 6 is a schematic cross-sectional side view of an embodiment of the present invention.
  • FIG. 7 is a schematic top view of a foil laminated to a substrate with isolation dams coated thereon.
  • FIG. 8 is a schematic cross-sectional side view taken along line 8 - 8 of FIG. 7 .
  • FIG. 9 is a schematic top view of an embodiment of the present invention.
  • FIG. 10 is a schematic cross-sectional side view taken along line 10 - 10 of FIG. 9 .
  • FIG. 11 is a cross-sectional side view of an embodiment of the present invention.
  • FIG. 12 is a schematic top view of an embodiment of the present invention.
  • FIG. 13 is a cross-sectional side view taken along line 13 - 13 of FIG. 12 .
  • FIG. 14 is a cross-sectional side view of an embodiment of the present invention.
  • FIG. 15 is a cross-sectional side view of an embodiment of the present invention.
  • Described is a process for forming a capacitor which is integral to a printed circuit board or substrate. More specifically, the invention describes a process for manufacturing a printed circuit board, or substrate, with capacitance integral thereto.
  • the substrate, with an integral capacitor will be further processed by the incorporation of additional layers to form a completed substrate with a capacitor embedded therein.
  • a conductive foil, 12 is attached, adhered, or laminated to an unfinished substrate, 10 .
  • the conductive foil comprises a dielectric layer, 13 , formed on at least that surface which is away from the substrate.
  • the dielectric layer can be formed after the foil is on the substrate but prior formation is preferred.
  • the conductive foil is preferably a valve metal selected from aluminum, tantalum, niobium, titanium or a combination thereof or a conductive oxide such as NbO.
  • the conductive foil will ultimately form the anode.
  • the dielectric is preferably formed by anodic oxidation of the foil.
  • both sides of the foil can contain an oxide layer.
  • Metal foil with a single oxide layer is not commercially available under favorable terms, thereby necessitating the use of a foil with both sides oxidized. It is preferred that the surface of the conductive foil is roughened to increase the surface area prior to anodizing to form the oxide dielectric.
  • the dielectric can be formed by other methods including vapor deposition, sol-gel applications, and solvent based applications, and may be an oxide of the conductive foil or a different material, such as a ceramic dielectric.
  • a solid electrolyte layer, 14 is formed on the exposed dielectric layer, 13 , in regions where the capacitive functionality is desired.
  • the solid electrolyte layer may consist of one or more layers of one or more conductive polymers.
  • Preferred conductive polymers include polypyrrole, polyaniline, and polythiophene.
  • polypyrrole, polyaniline, and polythiophene refer equally to derivatives thereof.
  • the conductive polymer may be applied from a solution or suspension or the conductive polymer may be formed in-situ by coating a monomer and oxidizer sequentially.
  • In-situ polymer formation from monomer is less preferred due to the complexities of incorporating the process into conventional in-line automated processes since the number of process steps is necessarily increased with in-situ formation. Furthermore, in-situ polymer formation from monomer typically provides a thicker, less dense, polymer layer which is less desirable in most applications.
  • the polymer layer is applied by any technique available in the art, without limit, with exemplary methods including ink jet printing, screen-printing, gravure coating, or masked spraying.
  • the solid electrolyte layer may comprise a manganese dioxide layer either in addition to a polymer layer or instead of the polymer layer.
  • the manganese dioxide layer is preferably formed by applying a solution of a manganese compound, such as manganese nitrate or a permanganate, followed by converting the manganese compound to manganese dioxide by heat. It is preferable that the manganese dioxide layer be deposited prior to deposition of the polymer; however, they can be added as a mixture.
  • a manganese compound such as manganese nitrate or a permanganate
  • a carbon layer, 16 is preferably applied over the solid electrolyte layer, 14 , as illustrated schematically in top view in FIG. 4 and in schematic cross-sectional view in FIG. 5 taken along line 5 - 5 of FIG. 4 .
  • the carbon layer improves adhesion between the solid electrolyte layer, 14 , and subsequent conductive layer, 18 , and is therefore preferred.
  • the carbon layer is formed on the patterned surface of the solid electrolyte layer by applying a paste, or thick ink, containing carbon particles preferably in the form of graphite or carbon black.
  • the carbon layer can be applied by ink jet printing, screen-printing, gravure printing or by spraying without limit thereto.
  • the conductive layer, 18 is a layer which allows formation of a highly conductive connection between the cathode and subsequent circuitry.
  • the conductive layer may be silver, copper, gold, or another highly conductive metal or a combination thereof. Particularly preferred is a silver, copper or silver/copper ink or paste.
  • the layer may be deposited by ink jet printing, screen printing, gravure printing, spraying, sputtering, atomic layer deposition or other means for applying a thin layer deposition.
  • the cathode refers to either the solid electrolyte layer or the combination of the solid electrolyte layer, carbon layer and conductive layer.
  • each capacitive couple is preferably isolated from the others by a demarcation, 20 , in the foil, which electrically isolates that portion of the foil acting as the anode and forming a capacitor with the cathode layers from the remaining foil.
  • the demarcation can be formed by etching or dicing at least through the oxide layer and the valve metal foil layer. It would be apparent that that the kerf width of the demarcation must be sufficiently wide to avoid current crossing the demarcation.
  • the demarcation is illustrated as a narrow strip, it is understood that it may include any or all of the foil which is not functioning as the anode of a capacitor with the understanding that a sufficient area of foil is removed to avoid current flow from the anode portion to surrounding functioning foil.
  • a width of about 0.025 mm is sufficient. However, 0.05 mm is more preferable.
  • foil may remain in the finished substrate, wherein the remaining foil provides either no electrical function or functions as a component in an element other than a capacitor.
  • windows and holes may be created in the foil base before application of the foil to the semi-finished substrate, or these areas may be removed subsequent to the application. The holes or windows will allow vias and plated through holes to pass through this layer without connection to any of the capacitive elements and will facilitate registration of the foil during the lamination process.
  • the conductive foil may remain intact between capacitors, thereby ultimately forming multiple capacitors with a common anode. Ground and power connections could then be established between at least two of the multiple cathodes without connecting to the conductive foil anode, comprising a capacitor device connected in a non-polar configuration.
  • This could allow greater flexibility in the design of a circuit substrate in that an embedded capacitance layer with a given isolation dam and cathode application pattern could be utilized for more than one circuit substrate design.
  • the isolation dam is a non-conductive region formed by treating the conductive material to render it non-conductive.
  • a functional capacitor or multiple capacitors, is provided on a substrate and the substrate may be suitable for use in some applications.
  • the demarcations may completely sever one or more functional capacitors mounted on a substrate from the larger substrate for use.
  • further processing ensues to prepare a printed circuit board with capacitance incorporated therein.
  • additional circuit board material, 21 it is preferable to apply, preferably by lamination, additional circuit board material, 21 , over the capacitor and semi-finished substrate, thereby forming the embedded capacitance or an embedded capacitor within the substrate material.
  • the additional circuit board layers are applied by any technique known in the art and standard materials are suitable for use therein. After lamination, and in the course of forming additional layers of the circuit board material, the anode and cathode terminals of the capacitor must be accessed for connection to eventual circuit traces on the circuit board.
  • the connectivity among layers is preferably made with a blind via or a through hole, both of which will be described, while traces of conductive material (i.e. copper) afford connection to multiple areas at each layer.
  • traces of conductive material i.e. copper
  • a cathodic blind via, 22 is formed directly above the cathode region of the capacitor. This allows a conductor to be brought into electrical contact with both the cathode and a cathodic circuit trace, 24 , which may be at least temporarily on the surface of the circuit substrate.
  • An anodic blind via, 26 is formed which is in electrical contact with the conductive foil forming the anode interior to the demarcation relative to the capacitive couple. The anodic blind via allows a conductor therein to form an electrical contact between the anode and an anode circuit trace, 28 .
  • An anodic through via, 30 passing through the entire substrate, is in electrical contact with the anode interior to the demarcation relative to the capacitive couple and is then in electrical contact with at least one anodic trace, 32 , on a surface of the circuit substrate. It would be apparent that additional laminations may occur such that the traces described are ultimately interior to a layered circuit board.
  • FIGS. 7-11 Another embodiment will be described with reference to FIGS. 7-11 .
  • the substrate, 10 , foil, 12 , and dielectric, 13 are as described above.
  • An isolation dam, 40 is formed on the surface of the dielectric.
  • the interior area of the dam is the shape and size of the intended cathode and the isolation dam circumvents the cathode.
  • the isolation dam prior to formation of a cathode is illustrated in top schematic view in FIG. 7 and cross-sectional schematic view in FIG. 8 taken along line 8 - 8 of FIG. 7 .
  • a solid electrolyte and optional but preferred carbon and conductive layers are formed within the area of the isolation dam to form the cathode of a capacitor.
  • the resulting capacitor is illustrated in top schematic view in FIG. 9 and in schematic cross-sectional view in FIG. 10 taken along line 10 - 10 of FIG. 9 .
  • the isolation dam, 40 forms a pool within which the cathode, 42 , is coated.
  • an optional but preferred metal layer, 44 is formed and the capacitors are singulated.
  • the substrate is diced along a line, 46 , to isolate one or more discrete capacitor(s) on a substrate.
  • the line, 46 represents a demarcation line wherein the conductive foil is interrupted between capacitors to electrically isolate discrete capacitors on a common substrate or to form discrete capacitors with a common anode.
  • the demarcation can represent a narrow band which is sufficiently wide for electrical isolation, or a portion, up to the entire foil not otherwise functioning as the anode of a capacitor, can be removed.
  • FIG. 11 A particularly preferred embodiment is illustrated schematically after further processing in FIG. 11 . Shown therein is additional circuit board material, 41 , laminated over the capacitor. As would be apparent, electrical connectivity must be made between the capacitor and traces for the function of the capacitor to be realized in an electrical circuit. Illustrated in FIG. 11 are blind vias, 48 , primarily for the cathodic couple, wherein the cathode is in electrical contact with a cathode trace, 50 . Through vias, 52 , are preferably formed through the isolation dam, 40 , such that the isolation dam forms a sleeve with the through via therein.
  • a conductor dispensed in the through via forms an electrical connection between the conductive foil, which functions as the anode, and an anode trace, 54 , on at least one side of the laminated device. It would be apparent from the figure that a blind via through the isolation dam could also be utilized, wherein the blind via does not pass entirely through the structure but only through to the extent necessary to be in electrical contact with the conductive foil anode.
  • FIGS. 12 and 13 An embodiment of the present invention is illustrated in schematic top view in FIG. 12 and schematic cross-sectional view in FIG. 13 taken along line 13 - 13 of FIG. 12 .
  • a substrate, 126 has a foil laminated thereon.
  • the foil comprises a first conductive layer, 128 , such as a metal foil, and dielectric, 130 .
  • a cathode comprising a solid electrolyte, 134 , and a second conductive layer, 136 , is formed on the dielectric, such that the cathode and foil form a capacitive couple with the dielectric therebetween.
  • the capacitive couple is isolated electrically by demarcations, 132 .
  • An isolation dam, 122 provides a via location for connection to the anode which is isolated from the remaining foil by the demarcation.
  • a second isolation dam, 138 is provided wherein a through hole, 238 , is ultimately formed for additional functionality.
  • FIG. 14 An additional embodiment of the present invention is illustrated in schematic cross-sectional side view in FIG. 14 .
  • the substrate, 126 , first conductive layer, 128 , dielectric, 130 , demarcation, 132 , solid electrolyte layer, 134 , isolation dam, 122 , and second isolation dam, 138 are as described with reference to FIGS. 12 and 13 .
  • additional lamination, 140 has been added to encase the capacitor elements, thereby forming a laminated substrate with embedded capacitance.
  • An anodic via, 144 illustrated as a blind via, is in the first isolation dam, 122 .
  • a second via, 142 illustrated as a through via, is formed in the second isolation dam, 138 .
  • the second via can be utilized to form electrical connectivity with the foil which may, or may not, be utilized in the capacitance functionality of the substrate.
  • a substrate, 150 has a metal foil, 152 and 154 , coated thereon, wherein the metal foil has a conductive metal, 152 , and a dielectric, 154 .
  • An isolation dam, 156 is applied on the dielectric.
  • a via, 156 preferably a through via, is formed through the isolation dam, 162 , wherein the via is larger than ultimately desired.
  • the via is preferably coated with a dielectric, 170 .
  • the via is then redrilled and filled with a conductive material, 160 , The via is reformed with a smaller size than the previous via thereby forming a second via.
  • the result is a via, 158 , with a collar therein.
  • the material can be a conductive material, such as copper, thereby forming a through via with a conductive sleeve therein.
  • the material, 160 can be an insulator material thereby forming an insulative collar.
  • a particular feature of the present invention is the ability to form a capacitor with thin layers which would otherwise be difficult to manufacture.
  • Capacitive elements with a thickness of less than 250 ⁇ m as measured from the cathode face to the opposing anode face can easily be formed with the present invention.
  • the ability to manufacture a capacitor with thin active layers increases the capacitive volume which is an ongoing desire in capacitor manufacture.
  • the present invention allows for the manufacture of a capacitor, being the anode, dielectric and cathode, of about 10 ⁇ m to about 250 ⁇ m thick. More preferably, the present invention allows for the manufacture of capacitors which are less than 100 ⁇ m and more preferably less than 50 ⁇ m.
  • the printed circuit layers may be formed of commonly used printed circuit board materials such as FR-4, but the present invention is compatible with most available multi-layer printed circuit materials.
  • each subsequent layer is slightly smaller than the previous layer such that the surface projection of each layer leaves a frame from the previous layer in a “wedding cake” arrangement.
  • This is preferred for manufacturing simplicity since it would be extremely difficult to coat a subsequent layer with the exact area of the underlying area without some material dripping down the edge of the stacked layers. Obviously, it is desirable to have as much surface area of capacitance as possible without sacrificing losses due to a subsequent layer not being isolated to the surface.
  • the substrate is not particularly limited for demonstrating the invention.
  • Particularly suitable substrates include copper, copper-coated circuit substrates such as FR-4, polyimide, phenolic, BT, and various Rogers high performance materials such as TMM, etc.
  • Glass reinforced polymer is a particularly preferred substrate.
  • anode and cathode refer to the two conductive layers separated by a dielectric thereby forming a capacitive couple.
  • the anode refers to the metal foil and the cathode refers to the conductive layer formed on the dielectric of the anode foil.
  • the anode is the positive terminal and the cathode is the negative terminal yet this could be reversed if contained within the lowered stress limit, without detriment and without departing from the meets and bounds of the instant invention.
  • the isolation dam is a non-conductive material capable of being applied to a surface and forming a raised barrier thereon.
  • the material is preferably applied as a thixotropic material.
  • Particularly preferred isolation dam materials include polyimides, silicones, and epoxies.
  • through vias and through holes are defined as vias which go through all layers in place at the time of via formation.
  • a blind via is a via which goes through less than all of the layers in place at the time of via formation.
  • Dice cutting refers to a cutting operation which separates discrete capacitors from the carrier or from each other and may be a complete severing or only be partially through the device. Exemplary methods include routing, saw dicing, blade dicing, water jet cutting, laser cutting, chemical etching, selective heating, laser ablation and the like.
  • the foil is laminated to the substrate preferably using an adhesive.
  • adhesives include polyimides, epoxies, and acrylates.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Non-Insulated Conductors (AREA)

Abstract

A process for forming a laminate with capacitance and the laminate formed thereby. The process includes the steps of providing a substrate and laminating a conductive foil on the substrate wherein the foil has a dielectric. A conductive layer is formed on the dielectric. The conductive foil is treated to electrically isolate a region of conductive foil containing the conductive layer from additional conductive foil. A cathodic conductive couple is made between the conductive layer and a cathode trace and an anodic conductive couple is made between the conductive foil and an anode trace.

Description

BACKGROUND
The present invention is related to an improved method for forming a capacitor. More specifically, the present invention is related to a method for forming a circuit board having capacitors formed therein.
Capacitors are utilized in virtually every electronic device. Their function in an electronic circuit is well known and further discussion is not warranted herein.
It is an ongoing desire in the electronics industry to miniaturize circuitry. This miniaturization is intended to occur without loss of capability.
There are two major approaches to miniaturization. One approach is to miniaturize each and every component of a circuit and/or to increase the density of components in a circuit. This approach has been widely exploited and great strides have been made. Unfortunately, as the component size decreases, the handling complexity increases, requiring ever more intricate pick & place equipment which often must be developed, increasing production cycle time and overall manufacturing cost. Furthermore, as parts become smaller and more densely placed, parasitics within and between components increase.
A second approach to miniaturization is to combine functionality in selected components. For example, the real estate represented by the circuit board substrate functions, by and large, as structural support and for connectivity only and it does not otherwise contribute to the electrical function of the electrical circuit. Incorporating functionality into the area occupied by the substrate would serve two functions. A component which would otherwise be surface mounted, or otherwise incorporated, could be eliminated and the substrate space which is otherwise functionless can be reclaimed. While this is straightforward in theory, actually incorporating the functionality within the substrate has been difficult to implement in many applications. Gains have been made toward incorporating individual capacitors into a circuit substrate, as presented in U.S. Pat. No. 7,126,811; however, placement of discrete devices thin enough to be incorporated in a circuit substrate requires delicate pick and place equipment in order to avoid mechanical stresses to the part which may result in electrical defects, increased rework, etc. Placement of individual devices also requires extra processing time when compared to the lamination of a single layer.
There are applications where large decoupling capacitors are required for integrated circuit performance yet there is insufficient space available on the integrated circuit to allow the inclusion of such large capacitors. In such instances, external capacitance is recommended to be added as the integrated circuit is assembled to a circuit board, but an embedded capacitance layer could be sufficiently sized to be buried within the circuit board substrate, thus eliminating the need for an external capacitance.
Incorporation in the substrate of a ceramic or polymer-based embedded capacitance layer such as that presented in U.S. Pat. No. 6,657,849, is known in the art. These layers may be formed in advance and then incorporated with other layers using lamination processes well-known in the industry, requiring less processing time and less complex assembly equipment than incorporation of discrete components. However, the attainable capacitance is limited to a few hundred picofarads per square centimeter. A different type of capacitor, such as that created from a valve metal substrate, is necessary to maximize the available capacitance in the incorporated layer and the board space savings due to incorporation of the capacitance layer.
Manufacture of a valve metal based capacitance layer for incorporation into a circuit board substrate has been described in U.S. Pat. No. 7,317,610. Here, cathode layers are formed on the surface of a dielectric anodic oxide of a sheet-like valve metal substrate. The resulting sheet-shaped capacitor forms an embedded capacitance layer having high capacitance per area (on the order of tens of microfarads per square centimeter) for incorporation into a printed circuit substrate. However, there is not presented a means for electrical isolation of the anode and cathode layers during the circuit substrate assembly process. Specifically, during the formation of plated through holes, there is no mechanism in place to prevent contact between the valve metal substrate and the solid electrolyte material, leaving a possible means for the generation of an electrical short. Katsir, et. al. present in U.S. Pat. No. 6,865,071 a method by which the valve metal and dielectric are selectively applied in the vapor phase. This allows for the formation of discrete regions of the anode substrate which have no porous dielectric coating; however, application of the solid electrolyte and subsequent cathode layers must be controlled such that the conductive cathode coatings remain electrically isolated from the anode. Costly equipment is required to control application of the cathode materials such that electrical isolation of the electrodes is maintained without deleterious effect on capacitance per area.
The present invention is directed to a simple and cost-effective method for incorporating large capacitance into a substrate during manufacture.
SUMMARY
It is an object of the present invention to provide an improved method for the formation of capacitors.
It is another object of the present invention to provide an improved method for forming a circuit board comprising capacitance.
A particular feature of the present invention is a method of manufacturing a capacitor integrated into a substrate.
A particular advantage of the present invention is the ability to reclaim real estate within an electrical circuit which otherwise provides no contribution to the electronics of the circuit.
Another advantage of the present invention is the ability to eliminate a surface mounted component by incorporating the function thereof into the substrate or circuit board.
These and other advantages, as will be realized, are provided in a process for forming a laminate with capacitance. The process includes the steps of providing a substrate and laminating a conductive foil anode on the substrate, wherein the foil has a dielectric thereon. A capacitor is then formed by forming a cathode comprising one or more conductive layers on the dielectric. The conductive foil is treated to electrically isolate a region of conductive foil containing the cathode from additional conductive foil. Electrical connections are made between the capacitor cathode and a circuit trace and between the conductive foil anode and a second circuit trace.
Yet another embodiment is provided in a process for forming a laminate with capacitance. The process includes the steps of providing a substrate and laminating a conductive foil on the substrate, wherein the foil acts as a capacitor anode and has a dielectric thereon. An isolation dam is applied on the dielectric. A cathode comprising one or more conductive layers is formed on the dielectric, wherein the isolation dam circumvents, and preferably circumscribes the at least one conductive layer. The conductive foil is treated to electrically isolate a region of conductive foil containing the cathode from additional conductive foil. An electrical connection is established between the capacitor cathode and a circuit trace. Electrical connection to the capacitor anode is established by connecting a region of the conductive foil outside the isolation dam to a second circuit trace.
Yet another embodiment is provided in a layered substrate with capacitance. The layered structure has a first substrate and a conductive foil laminated to the first substrate wherein the conductive foil has a dielectric thereon. A cathode is on the dielectric. A second substrate forms a layered structure with the conductive foil and cathode between the first substrate and the second substrate. A first trace is on at least one of the first substrate and the second substrate and a first via forms an electrical connection between the cathode and the first trace. A second trace is on at least one of the first substrate and the second substrate and a second via forms an electrical connection between the conductive foil and the second trace.
BRIEF DESCRIPTION OF FIGURES
FIG. 1 is a schematic top view illustrating a foil laminated on a substrate.
FIG. 2 is a schematic top view illustrating a conductive layer formed on the dielectric of a foil.
FIG. 3 is a schematic cross-sectional side view taken along line 3-3 of FIG. 2.
FIG. 4 is a schematic top view illustrating additional layers.
FIG. 5 is a schematic cross-sectional side view taken along line 5-5 of FIG. 4.
FIG. 6 is a schematic cross-sectional side view of an embodiment of the present invention.
FIG. 7 is a schematic top view of a foil laminated to a substrate with isolation dams coated thereon.
FIG. 8 is a schematic cross-sectional side view taken along line 8-8 of FIG. 7.
FIG. 9 is a schematic top view of an embodiment of the present invention.
FIG. 10 is a schematic cross-sectional side view taken along line 10-10 of FIG. 9.
FIG. 11 is a cross-sectional side view of an embodiment of the present invention.
FIG. 12 is a schematic top view of an embodiment of the present invention.
FIG. 13 is a cross-sectional side view taken along line 13-13 of FIG. 12.
FIG. 14 is a cross-sectional side view of an embodiment of the present invention.
FIG. 15 is a cross-sectional side view of an embodiment of the present invention.
DETAILED DESCRIPTION OF THE INVENTION
The invention will be described with reference to the various figures forming an integral non-limiting part of the disclosure. In the various figures, similar elements will be numbered accordingly.
Described is a process for forming a capacitor which is integral to a printed circuit board or substrate. More specifically, the invention describes a process for manufacturing a printed circuit board, or substrate, with capacitance integral thereto.
In a preferred embodiment, the substrate, with an integral capacitor, will be further processed by the incorporation of additional layers to form a completed substrate with a capacitor embedded therein.
The invention can be described by the process illustrated in the following figures. In FIG. 1, a conductive foil, 12, is attached, adhered, or laminated to an unfinished substrate, 10. The conductive foil comprises a dielectric layer, 13, formed on at least that surface which is away from the substrate. The dielectric layer can be formed after the foil is on the substrate but prior formation is preferred. The conductive foil is preferably a valve metal selected from aluminum, tantalum, niobium, titanium or a combination thereof or a conductive oxide such as NbO. The conductive foil will ultimately form the anode. In one embodiment, the dielectric is preferably formed by anodic oxidation of the foil. It is preferable to have only one dielectric layer; however, both sides of the foil can contain an oxide layer. Metal foil with a single oxide layer is not commercially available under favorable terms, thereby necessitating the use of a foil with both sides oxidized. It is preferred that the surface of the conductive foil is roughened to increase the surface area prior to anodizing to form the oxide dielectric.
The dielectric can be formed by other methods including vapor deposition, sol-gel applications, and solvent based applications, and may be an oxide of the conductive foil or a different material, such as a ceramic dielectric.
As illustrated schematically in top view in FIG. 2 and in side view in FIG. 3 taken along line 3-3 of FIG. 2, a solid electrolyte layer, 14, is formed on the exposed dielectric layer, 13, in regions where the capacitive functionality is desired. The solid electrolyte layer may consist of one or more layers of one or more conductive polymers. Preferred conductive polymers include polypyrrole, polyaniline, and polythiophene. For the purposes of the present invention, polypyrrole, polyaniline, and polythiophene refer equally to derivatives thereof. The conductive polymer may be applied from a solution or suspension or the conductive polymer may be formed in-situ by coating a monomer and oxidizer sequentially. In-situ polymer formation from monomer is less preferred due to the complexities of incorporating the process into conventional in-line automated processes since the number of process steps is necessarily increased with in-situ formation. Furthermore, in-situ polymer formation from monomer typically provides a thicker, less dense, polymer layer which is less desirable in most applications. The polymer layer is applied by any technique available in the art, without limit, with exemplary methods including ink jet printing, screen-printing, gravure coating, or masked spraying. The solid electrolyte layer may comprise a manganese dioxide layer either in addition to a polymer layer or instead of the polymer layer. The manganese dioxide layer is preferably formed by applying a solution of a manganese compound, such as manganese nitrate or a permanganate, followed by converting the manganese compound to manganese dioxide by heat. It is preferable that the manganese dioxide layer be deposited prior to deposition of the polymer; however, they can be added as a mixture.
A carbon layer, 16, is preferably applied over the solid electrolyte layer, 14, as illustrated schematically in top view in FIG. 4 and in schematic cross-sectional view in FIG. 5 taken along line 5-5 of FIG. 4. The carbon layer improves adhesion between the solid electrolyte layer, 14, and subsequent conductive layer, 18, and is therefore preferred. The carbon layer is formed on the patterned surface of the solid electrolyte layer by applying a paste, or thick ink, containing carbon particles preferably in the form of graphite or carbon black. The carbon layer can be applied by ink jet printing, screen-printing, gravure printing or by spraying without limit thereto.
The conductive layer, 18, is a layer which allows formation of a highly conductive connection between the cathode and subsequent circuitry. The conductive layer may be silver, copper, gold, or another highly conductive metal or a combination thereof. Particularly preferred is a silver, copper or silver/copper ink or paste. The layer may be deposited by ink jet printing, screen printing, gravure printing, spraying, sputtering, atomic layer deposition or other means for applying a thin layer deposition. The cathode refers to either the solid electrolyte layer or the combination of the solid electrolyte layer, carbon layer and conductive layer.
Referring still to FIGS. 4 and 5, each capacitive couple is preferably isolated from the others by a demarcation, 20, in the foil, which electrically isolates that portion of the foil acting as the anode and forming a capacitor with the cathode layers from the remaining foil. The demarcation can be formed by etching or dicing at least through the oxide layer and the valve metal foil layer. It would be apparent that that the kerf width of the demarcation must be sufficiently wide to avoid current crossing the demarcation. While the demarcation is illustrated as a narrow strip, it is understood that it may include any or all of the foil which is not functioning as the anode of a capacitor with the understanding that a sufficient area of foil is removed to avoid current flow from the anode portion to surrounding functioning foil. A width of about 0.025 mm is sufficient. However, 0.05 mm is more preferable. In one embodiment, foil may remain in the finished substrate, wherein the remaining foil provides either no electrical function or functions as a component in an element other than a capacitor. In another embodiment, windows and holes may be created in the foil base before application of the foil to the semi-finished substrate, or these areas may be removed subsequent to the application. The holes or windows will allow vias and plated through holes to pass through this layer without connection to any of the capacitive elements and will facilitate registration of the foil during the lamination process.
In one embodiment, the conductive foil may remain intact between capacitors, thereby ultimately forming multiple capacitors with a common anode. Ground and power connections could then be established between at least two of the multiple cathodes without connecting to the conductive foil anode, comprising a capacitor device connected in a non-polar configuration. This could allow greater flexibility in the design of a circuit substrate in that an embedded capacitance layer with a given isolation dam and cathode application pattern could be utilized for more than one circuit substrate design. In one embodiment the isolation dam is a non-conductive region formed by treating the conductive material to render it non-conductive.
After demarcation, a functional capacitor, or multiple capacitors, is provided on a substrate and the substrate may be suitable for use in some applications. Alternatively, the demarcations may completely sever one or more functional capacitors mounted on a substrate from the larger substrate for use. In a particularly preferred embodiment further processing ensues to prepare a printed circuit board with capacitance incorporated therein.
As illustrated in FIG. 6, it is preferable to apply, preferably by lamination, additional circuit board material, 21, over the capacitor and semi-finished substrate, thereby forming the embedded capacitance or an embedded capacitor within the substrate material. The additional circuit board layers are applied by any technique known in the art and standard materials are suitable for use therein. After lamination, and in the course of forming additional layers of the circuit board material, the anode and cathode terminals of the capacitor must be accessed for connection to eventual circuit traces on the circuit board. The connectivity among layers is preferably made with a blind via or a through hole, both of which will be described, while traces of conductive material (i.e. copper) afford connection to multiple areas at each layer. In FIG. 6, a cathodic blind via, 22, is formed directly above the cathode region of the capacitor. This allows a conductor to be brought into electrical contact with both the cathode and a cathodic circuit trace, 24, which may be at least temporarily on the surface of the circuit substrate. An anodic blind via, 26, is formed which is in electrical contact with the conductive foil forming the anode interior to the demarcation relative to the capacitive couple. The anodic blind via allows a conductor therein to form an electrical contact between the anode and an anode circuit trace, 28. An anodic through via, 30, passing through the entire substrate, is in electrical contact with the anode interior to the demarcation relative to the capacitive couple and is then in electrical contact with at least one anodic trace, 32, on a surface of the circuit substrate. It would be apparent that additional laminations may occur such that the traces described are ultimately interior to a layered circuit board.
Another embodiment will be described with reference to FIGS. 7-11. In the Figs., the substrate, 10, foil, 12, and dielectric, 13, are as described above. An isolation dam, 40, is formed on the surface of the dielectric. In one embodiment, the interior area of the dam is the shape and size of the intended cathode and the isolation dam circumvents the cathode. The isolation dam prior to formation of a cathode is illustrated in top schematic view in FIG. 7 and cross-sectional schematic view in FIG. 8 taken along line 8-8 of FIG. 7. A solid electrolyte and optional but preferred carbon and conductive layers are formed within the area of the isolation dam to form the cathode of a capacitor. The resulting capacitor is illustrated in top schematic view in FIG. 9 and in schematic cross-sectional view in FIG. 10 taken along line 10-10 of FIG. 9. The isolation dam, 40, forms a pool within which the cathode, 42, is coated. After formation of the cathode, an optional but preferred metal layer, 44, is formed and the capacitors are singulated. In one embodiment, the substrate is diced along a line, 46, to isolate one or more discrete capacitor(s) on a substrate. Alternatively, the line, 46, represents a demarcation line wherein the conductive foil is interrupted between capacitors to electrically isolate discrete capacitors on a common substrate or to form discrete capacitors with a common anode. As mentioned previously, the demarcation can represent a narrow band which is sufficiently wide for electrical isolation, or a portion, up to the entire foil not otherwise functioning as the anode of a capacitor, can be removed.
A particularly preferred embodiment is illustrated schematically after further processing in FIG. 11. Shown therein is additional circuit board material, 41, laminated over the capacitor. As would be apparent, electrical connectivity must be made between the capacitor and traces for the function of the capacitor to be realized in an electrical circuit. Illustrated in FIG. 11 are blind vias, 48, primarily for the cathodic couple, wherein the cathode is in electrical contact with a cathode trace, 50. Through vias, 52, are preferably formed through the isolation dam, 40, such that the isolation dam forms a sleeve with the through via therein. A conductor dispensed in the through via forms an electrical connection between the conductive foil, which functions as the anode, and an anode trace, 54, on at least one side of the laminated device. It would be apparent from the figure that a blind via through the isolation dam could also be utilized, wherein the blind via does not pass entirely through the structure but only through to the extent necessary to be in electrical contact with the conductive foil anode.
An embodiment of the present invention is illustrated in schematic top view in FIG. 12 and schematic cross-sectional view in FIG. 13 taken along line 13-13 of FIG. 12. In FIGS. 12 and 13, a substrate, 126, has a foil laminated thereon. The foil comprises a first conductive layer, 128, such as a metal foil, and dielectric, 130. A cathode comprising a solid electrolyte, 134, and a second conductive layer, 136, is formed on the dielectric, such that the cathode and foil form a capacitive couple with the dielectric therebetween. The capacitive couple is isolated electrically by demarcations, 132. An isolation dam, 122, provides a via location for connection to the anode which is isolated from the remaining foil by the demarcation. A second isolation dam, 138, is provided wherein a through hole, 238, is ultimately formed for additional functionality.
An additional embodiment of the present invention is illustrated in schematic cross-sectional side view in FIG. 14. In FIG. 14, the substrate, 126, first conductive layer, 128, dielectric, 130, demarcation, 132, solid electrolyte layer, 134, isolation dam, 122, and second isolation dam, 138, are as described with reference to FIGS. 12 and 13. In FIG. 14, additional lamination, 140, has been added to encase the capacitor elements, thereby forming a laminated substrate with embedded capacitance. An anodic via, 144, illustrated as a blind via, is in the first isolation dam, 122. A second via, 142, illustrated as a through via, is formed in the second isolation dam, 138. The second via can be utilized to form electrical connectivity with the foil which may, or may not, be utilized in the capacitance functionality of the substrate.
Yet another embodiment is illustrated in cross-sectional side view in FIG. 15. In FIG. 15, a substrate, 150, has a metal foil, 152 and 154, coated thereon, wherein the metal foil has a conductive metal, 152, and a dielectric, 154. An isolation dam, 156, is applied on the dielectric. A via, 156, preferably a through via, is formed through the isolation dam, 162, wherein the via is larger than ultimately desired. The via is preferably coated with a dielectric, 170. The via is then redrilled and filled with a conductive material, 160, The via is reformed with a smaller size than the previous via thereby forming a second via. The result is a via, 158, with a collar therein. The material can be a conductive material, such as copper, thereby forming a through via with a conductive sleeve therein. Alternatively, the material, 160, can be an insulator material thereby forming an insulative collar.
A particular feature of the present invention is the ability to form a capacitor with thin layers which would otherwise be difficult to manufacture. Capacitive elements with a thickness of less than 250 μm as measured from the cathode face to the opposing anode face can easily be formed with the present invention. The ability to manufacture a capacitor with thin active layers increases the capacitive volume which is an ongoing desire in capacitor manufacture. The present invention allows for the manufacture of a capacitor, being the anode, dielectric and cathode, of about 10 μm to about 250 μm thick. More preferably, the present invention allows for the manufacture of capacitors which are less than 100 μm and more preferably less than 50 μm.
The printed circuit layers may be formed of commonly used printed circuit board materials such as FR-4, but the present invention is compatible with most available multi-layer printed circuit materials.
In one embodiment, each subsequent layer is slightly smaller than the previous layer such that the surface projection of each layer leaves a frame from the previous layer in a “wedding cake” arrangement. This is preferred for manufacturing simplicity since it would be extremely difficult to coat a subsequent layer with the exact area of the underlying area without some material dripping down the edge of the stacked layers. Obviously, it is desirable to have as much surface area of capacitance as possible without sacrificing losses due to a subsequent layer not being isolated to the surface.
The substrate is not particularly limited for demonstrating the invention. Particularly suitable substrates include copper, copper-coated circuit substrates such as FR-4, polyimide, phenolic, BT, and various Rogers high performance materials such as TMM, etc. Glass reinforced polymer is a particularly preferred substrate.
The terms anode and cathode as used herein refer to the two conductive layers separated by a dielectric thereby forming a capacitive couple. For the purposes of the present invention the anode refers to the metal foil and the cathode refers to the conductive layer formed on the dielectric of the anode foil. By convention the anode is the positive terminal and the cathode is the negative terminal yet this could be reversed if contained within the lowered stress limit, without detriment and without departing from the meets and bounds of the instant invention.
The isolation dam is a non-conductive material capable of being applied to a surface and forming a raised barrier thereon. The material is preferably applied as a thixotropic material. Particularly preferred isolation dam materials include polyimides, silicones, and epoxies.
In the present invention, through vias and through holes are defined as vias which go through all layers in place at the time of via formation. A blind via is a via which goes through less than all of the layers in place at the time of via formation.
Dice cutting, as used herein, refers to a cutting operation which separates discrete capacitors from the carrier or from each other and may be a complete severing or only be partially through the device. Exemplary methods include routing, saw dicing, blade dicing, water jet cutting, laser cutting, chemical etching, selective heating, laser ablation and the like.
The foil is laminated to the substrate preferably using an adhesive. Particular preferred adhesives include polyimides, epoxies, and acrylates.
The invention has been described with particular reference to the preferred embodiments without limit thereto. One of skill in the art would realize additional embodiments which are not specifically recited but within the scope of the claims appended hereto.

Claims (21)

The invention claimed is:
1. A process for forming a laminate with capacitance comprising:
providing a substrate;
laminating a valve metal conductive foil anode on said substrate wherein said foil comprises a metal oxide dielectric of said valve metal;
coating a solution or suspension of conductive layers on at least one discrete region of said dielectric to form at least one discrete cathode region;
treating said conductive foil to electrically isolate at least one region of said conductive foil containing said cathode region from remaining portion of said conductive foil.
2. The process for forming a laminate of claim 1 wherein said coating a solution or suspension of conductive layers takes place before said laminating said conductive foil to said substrate.
3. The process for forming a laminate of claim 1, further comprising the step of removing at least one region of said conductive foil not comprising said cathode region.
4. The process for forming a laminate of claim 3, comprising the step of removing at least one region of said conductive foil not comprising said cathode region prior to laminating said conductive foil to said substrate.
5. The process for forming a laminate of claim 1 further comprising laminating a second substrate over said conductive layers.
6. A laminate formed by the process of claim 5.
7. The process for forming a laminate of claim 5 further comprising forming at least one plated through hole.
8. The process for forming a laminate of claim 1 further comprising the step of forming an electrical connection between at least one region of said conductive foil and a conductive trace.
9. The process for forming a laminate of claim 8, wherein said electrical connection to said conductive trace comprises a via.
10. The process for forming a laminate of claim 1 further comprising the step of forming an electrical connection between said at least one cathode region and a conductive trace.
11. The process for forming a laminate of claim 10, wherein said electrical connection to said conductive trace comprises a via.
12. The process for forming a laminate of claim 1 wherein said conductive foil comprises one conductor selected from aluminum, tantalum, niobium, titanium and NbO.
13. The process for forming a laminate of claim 12 wherein said conductive foil comprises aluminum.
14. The process for forming a laminate of claim 1 wherein said dielectric is an oxide of said conductive foil.
15. The process for forming a laminate of claim 1 wherein said treating said conductive foil is selected from routing, saw dicing, blade dicing, chemical etching, water jet cutting and laser cutting.
16. The process for forming a laminate of claim 1 wherein said substrate comprises a glass-reinforced polymer.
17. A capacitor formed by the method of claim 1.
18. A process for forming a laminate with capacitance comprising:
providing a substrate;
laminating a valve metal conductive foil anode on said substrate wherein said foil comprises a metal oxide dielectric of said valve metal;
coating a solution or suspension of conductive layers on at least one discrete region of said dielectric to form at least one discrete cathode region;
treating said conductive foil to electrically isolate at least one region of said conductive foil containing said cathode region from remaining portion of said conductive foil;
further comprising forming at least one plated through hole;
further comprising laminating a second substrate over said conductive layers wherein said plated through hole is formed by steps of:
forming a first hole through said laminate in a region outside said cathode region;
filling said first hole with a non-conductive material;
forming a second hole through said non-conductive material, wherein said second hole has a smaller diameter than said first hole; and
applying a conductive material to said second hole to form a conductive pathway between a first face of said laminate and a second face of said laminate.
19. A process for forming a laminate with capacitance comprising:
providing a substrate;
laminating a conductive foil anode on said substrate wherein said foil comprises a dielectric of said conductive foil;
coating a solution or suspension of conductive layers on at least one discrete region of said dielectric to form at least one discrete cathode region;
treating said conductive foil to electrically isolate at least one region of said conductive foil containing said cathode region from remaining portion of said conductive foil;
wherein said conductive layers comprises a conductive polymeric material or manganese dioxide.
20. The process for forming a laminate of claim 19 wherein said conductive polymeric material comprises a material selected from polypyrrole, polyaniline, and polythiophene.
21. A process for forming a laminate with capacitance comprising:
providing a substrate;
laminating a valve metal conductive foil anode on said substrate wherein said foil comprises a metal oxide dielectric of said valve metal;
coating a solution or suspension of conductive polymeric directly on at least one discrete region of said dielectric to form at least one discrete cathode region;
treating said conductive foil to electrically isolate at least one region of said conductive foil containing said cathode region from remaining portion of said conductive foil.
US12/180,768 2008-07-28 2008-07-28 Substrate with embedded patterned capacitance Active 2031-08-24 US8470680B2 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
US12/180,768 US8470680B2 (en) 2008-07-28 2008-07-28 Substrate with embedded patterned capacitance
EP09803461.4A EP2313900B1 (en) 2008-07-28 2009-07-28 Substrate with embedded patterned capacitance
CN2009801293685A CN102105955A (en) 2008-07-28 2009-07-28 Substrate with embedded patterned capacitance
PCT/US2009/051919 WO2010014580A2 (en) 2008-07-28 2009-07-28 Substrate with embedded patterned capacitance
US13/345,227 US8410536B2 (en) 2008-07-28 2012-01-06 Substrate with embedded patterned capacitance
US13/409,424 US8652920B2 (en) 2008-07-28 2012-03-01 Substrate with embedded patterned capacitance

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/180,768 US8470680B2 (en) 2008-07-28 2008-07-28 Substrate with embedded patterned capacitance

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US13/345,227 Division US8410536B2 (en) 2008-07-28 2012-01-06 Substrate with embedded patterned capacitance

Publications (2)

Publication Number Publication Date
US20100020473A1 US20100020473A1 (en) 2010-01-28
US8470680B2 true US8470680B2 (en) 2013-06-25

Family

ID=41568451

Family Applications (3)

Application Number Title Priority Date Filing Date
US12/180,768 Active 2031-08-24 US8470680B2 (en) 2008-07-28 2008-07-28 Substrate with embedded patterned capacitance
US13/345,227 Active US8410536B2 (en) 2008-07-28 2012-01-06 Substrate with embedded patterned capacitance
US13/409,424 Active US8652920B2 (en) 2008-07-28 2012-03-01 Substrate with embedded patterned capacitance

Family Applications After (2)

Application Number Title Priority Date Filing Date
US13/345,227 Active US8410536B2 (en) 2008-07-28 2012-01-06 Substrate with embedded patterned capacitance
US13/409,424 Active US8652920B2 (en) 2008-07-28 2012-03-01 Substrate with embedded patterned capacitance

Country Status (4)

Country Link
US (3) US8470680B2 (en)
EP (1) EP2313900B1 (en)
CN (1) CN102105955A (en)
WO (1) WO2010014580A2 (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8568456B2 (en) 2009-09-21 2013-10-29 Globus Medical, Inc. Transverse connector having a locking element for capturing multiple rods
US9123780B2 (en) * 2012-12-19 2015-09-01 Invensas Corporation Method and structures for heat dissipating interposers
WO2014127236A1 (en) 2013-02-14 2014-08-21 Kemet Electronics Corporation One-sided capacitor foils and methods of making one-sided capacitor foils
US9558390B2 (en) * 2014-07-25 2017-01-31 Qualcomm Incorporated High-resolution electric field sensor in cover glass
TWI546834B (en) * 2014-10-28 2016-08-21 鈺邦科技股份有限公司 Chip solid electrolytic capacitor and manufacturing method thereof
US9767962B2 (en) * 2016-01-22 2017-09-19 Micron Technology, Inc. Apparatuses, multi-chip modules and capacitive chips
US10978403B2 (en) 2019-01-30 2021-04-13 Delta Electronics, Inc. Package structure and method for fabricating the same
WO2018236784A1 (en) * 2017-06-19 2018-12-27 Industrial Heat, Llc Exothermic reaction electrode structure using pcb and semiconductor fabrication methods
US11943869B2 (en) 2020-02-04 2024-03-26 Kemet Electronics Corporation Electrically functional circuit board core material
MX2022009752A (en) * 2020-02-06 2023-01-11 Saras Micro Devices Inc Planar high-density aluminum capacitors for stacking and embedding.
US11631549B2 (en) 2020-07-30 2023-04-18 Medtronic, Inc. Electrical component and method of forming same
US12070609B2 (en) 2020-07-30 2024-08-27 Medtronic, Inc. Electrical component and method of forming same
US11756741B2 (en) * 2020-07-30 2023-09-12 Medtronic, Inc. Electrical component and method of forming same

Citations (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6246569B1 (en) 1997-11-12 2001-06-12 Pacesetter, Inc. Electrolytic capacitor and method of manufacturing
US20010026444A1 (en) 2000-01-21 2001-10-04 Naoki Matsushima Electronic circuit board with built-in thin film capacitor and manufacturing method thereof
US6462935B1 (en) 2001-09-07 2002-10-08 Lih-Ren Shiue Replaceable flow-through capacitors for removing charged species from liquids
US6571126B1 (en) 2000-11-03 2003-05-27 Cardiac Pacemakers, Inc. Method of constructing a capacitor stack for a flat capacitor
US6628505B1 (en) 2000-07-29 2003-09-30 Biosource, Inc. Flow-through capacitor, system and method
US20030182781A1 (en) 2001-07-17 2003-10-02 Katsumasa Miki Production method for solid electrolytic capacitor
US6657849B1 (en) 2000-08-24 2003-12-02 Oak-Mitsui, Inc. Formation of an embedded capacitor plane using a thin dielectric
US20050013088A1 (en) * 2003-07-14 2005-01-20 Yasuyoshi Horikawa Capacitor device and method of manufacturing the same
US6865071B2 (en) 1998-03-03 2005-03-08 Acktar Ltd. Electrolytic capacitors and method for making them
US6979854B2 (en) * 2002-10-04 2005-12-27 Shinko Electric Industries Co., Ltd. Thin-film capacitor device, mounting module for the same, and method for fabricating the same
US7126811B2 (en) 2002-12-27 2006-10-24 Matsushita Electric Industrial Co., Ltd. Capacitor and method for producing the same, and circuit board with a built-in capacitor and method for producing the same
US7138068B2 (en) * 2005-03-21 2006-11-21 Motorola, Inc. Printed circuit patterned embedded capacitance layer
US7193838B2 (en) * 2003-12-23 2007-03-20 Motorola, Inc. Printed circuit dielectric foil and embedded capacitors
US20070159771A1 (en) * 2004-07-22 2007-07-12 Nec Tokin Corporation Solid electrolytic capacitor, stacked capacitor using the same, and fabrication method thereof
US7317610B2 (en) * 2004-11-16 2008-01-08 Nec Toppan Circuit Solutions, Inc. Sheet-shaped capacitor and method for manufacture thereof
EP1890329A1 (en) 2005-07-13 2008-02-20 Matsushita Electric Industrial Co., Ltd. Mounted board, mounted body, and electronic device using same
US20080216296A1 (en) * 2007-03-07 2008-09-11 Prymak John D Thin solid electrolytic capacitor embeddable in a substrate
US7485411B2 (en) 2006-02-01 2009-02-03 Samsung Electro-Mechanics Co., Ltd. Method for manufacturing printed circuit board with thin film capacitor embedded therein

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US182781A (en) * 1876-10-03 Improvement in steam-heaters
NL7413380A (en) 1974-10-11 1976-04-13 Philips Nv PROCESS FOR THE MANUFACTURE OF SOLID CONDENSERS.
US7100277B2 (en) * 2004-07-01 2006-09-05 E. I. Du Pont De Nemours And Company Methods of forming printed circuit boards having embedded thick film capacitors
US7741189B2 (en) * 2005-06-20 2010-06-22 E.I. Du Pont De Nemours And Company Electrodes, inner layers, capacitors, electronic devices and methods of making thereof
KR100714580B1 (en) * 2005-11-03 2007-05-07 삼성전기주식회사 Method for manufacturing a thin film capacitor embedded printed circuit board, and printed circuited board obtained therefrom
JP4738299B2 (en) * 2006-09-20 2011-08-03 富士通株式会社 Capacitor, manufacturing method thereof, and electronic substrate

Patent Citations (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6246569B1 (en) 1997-11-12 2001-06-12 Pacesetter, Inc. Electrolytic capacitor and method of manufacturing
US6865071B2 (en) 1998-03-03 2005-03-08 Acktar Ltd. Electrolytic capacitors and method for making them
US20010026444A1 (en) 2000-01-21 2001-10-04 Naoki Matsushima Electronic circuit board with built-in thin film capacitor and manufacturing method thereof
US6628505B1 (en) 2000-07-29 2003-09-30 Biosource, Inc. Flow-through capacitor, system and method
US6657849B1 (en) 2000-08-24 2003-12-02 Oak-Mitsui, Inc. Formation of an embedded capacitor plane using a thin dielectric
US6571126B1 (en) 2000-11-03 2003-05-27 Cardiac Pacemakers, Inc. Method of constructing a capacitor stack for a flat capacitor
US20030182781A1 (en) 2001-07-17 2003-10-02 Katsumasa Miki Production method for solid electrolytic capacitor
US6462935B1 (en) 2001-09-07 2002-10-08 Lih-Ren Shiue Replaceable flow-through capacitors for removing charged species from liquids
US6979854B2 (en) * 2002-10-04 2005-12-27 Shinko Electric Industries Co., Ltd. Thin-film capacitor device, mounting module for the same, and method for fabricating the same
US7126811B2 (en) 2002-12-27 2006-10-24 Matsushita Electric Industrial Co., Ltd. Capacitor and method for producing the same, and circuit board with a built-in capacitor and method for producing the same
US20050013088A1 (en) * 2003-07-14 2005-01-20 Yasuyoshi Horikawa Capacitor device and method of manufacturing the same
US7193838B2 (en) * 2003-12-23 2007-03-20 Motorola, Inc. Printed circuit dielectric foil and embedded capacitors
US20070159771A1 (en) * 2004-07-22 2007-07-12 Nec Tokin Corporation Solid electrolytic capacitor, stacked capacitor using the same, and fabrication method thereof
US7317610B2 (en) * 2004-11-16 2008-01-08 Nec Toppan Circuit Solutions, Inc. Sheet-shaped capacitor and method for manufacture thereof
US7138068B2 (en) * 2005-03-21 2006-11-21 Motorola, Inc. Printed circuit patterned embedded capacitance layer
EP1890329A1 (en) 2005-07-13 2008-02-20 Matsushita Electric Industrial Co., Ltd. Mounted board, mounted body, and electronic device using same
US7485411B2 (en) 2006-02-01 2009-02-03 Samsung Electro-Mechanics Co., Ltd. Method for manufacturing printed circuit board with thin film capacitor embedded therein
US20080216296A1 (en) * 2007-03-07 2008-09-11 Prymak John D Thin solid electrolytic capacitor embeddable in a substrate

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Extended European Search Report, EP09803461.4, Nov. 24, 2011, Darek Pacholec.
International Preliminary Report on Patentability and Written Opinion of the International Searching Authority, Beate Giffo-Schmitt, PCT/US2009/-51919, Feb. 1, 2011.

Also Published As

Publication number Publication date
US8410536B2 (en) 2013-04-02
WO2010014580A3 (en) 2010-04-15
EP2313900B1 (en) 2021-03-24
US8652920B2 (en) 2014-02-18
US20100020473A1 (en) 2010-01-28
EP2313900A2 (en) 2011-04-27
EP2313900A4 (en) 2011-12-28
WO2010014580A2 (en) 2010-02-04
US20120106032A1 (en) 2012-05-03
US20120162857A1 (en) 2012-06-28
CN102105955A (en) 2011-06-22

Similar Documents

Publication Publication Date Title
US8470680B2 (en) Substrate with embedded patterned capacitance
US11145467B2 (en) Solid electrolytic capacitor and method for manufacturing solid electrolytic capacitor
US7793396B2 (en) Manufacturing method of capacitor
JP4432207B2 (en) Capacitor
JP2001307955A (en) Solid electrolytic capacitor
JP4019837B2 (en) Solid electrolytic capacitor and manufacturing method thereof
US6855177B2 (en) Method for producing solid electrolytic capacitor
JP4354227B2 (en) Solid electrolytic capacitor
JP2006510233A (en) Printed wiring board having low-inductance embedded capacitor and manufacturing method thereof
US6794260B2 (en) Method of manufacturing solid-state electrolytic capacitor
JP2002299161A (en) Composite electronic component
JP2008098487A (en) Solid electrolytic capacitor, solid electrolytic capacitor incorporated substrate, and manufacturing method thereof
US7833292B2 (en) Channel method for forming a capacitor
JP4337423B2 (en) Circuit module
US20180132356A1 (en) Method for manufacturing capacitor built-in substrate
JP2010177714A (en) Sheet capacitor, and manufacturing method thereof
JP2001307956A (en) Sheet capacitor
JPH0693421B2 (en) Method for manufacturing solid electrolytic capacitor
JP2003031438A (en) Method for producing solid electrolytic capacitor
JP2003068574A (en) Method for manufacturing solid electrolytic capacitor
JP2002299160A (en) Composite electronic component
JP2002367866A (en) Solid electrolytic capacitor
JP2003115418A (en) Method of manufacturing solid electrolytic capacitor
JP2005228925A (en) Manufacturing method of solid electrolytic capacitor

Legal Events

Date Code Title Description
AS Assignment

Owner name: KEMET ELECTRONICS CORPORATION, SOUTH CAROLINA

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:PRYMAK, JOHN D;STOLARSKI, CHRIS;MELODY, ALETHIA;AND OTHERS;REEL/FRAME:021299/0658

Effective date: 20080717

Owner name: MOTOROLA, INC., ILLINOIS

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:DUNN, GREGORY J;REEL/FRAME:021299/0775

Effective date: 20080721

AS Assignment

Owner name: K FINANCING, LLC,CALIFORNIA

Free format text: SECURITY AGREEMENT;ASSIGNOR:KEMET CORPORATION;REEL/FRAME:022892/0795

Effective date: 20090630

Owner name: K FINANCING, LLC, CALIFORNIA

Free format text: SECURITY AGREEMENT;ASSIGNOR:KEMET CORPORATION;REEL/FRAME:022892/0795

Effective date: 20090630

AS Assignment

Owner name: KEMET CORPORATION,SOUTH CAROLINA

Free format text: RELEASE OF SECURITY INTEREST RECORDED AT REEL/FRAME 022892/0795;ASSIGNOR:K FINANCING, LLC;REEL/FRAME:024397/0774

Effective date: 20100505

Owner name: KEMET CORPORATION, SOUTH CAROLINA

Free format text: RELEASE OF SECURITY INTEREST RECORDED AT REEL/FRAME 022892/0795;ASSIGNOR:K FINANCING, LLC;REEL/FRAME:024397/0774

Effective date: 20100505

AS Assignment

Owner name: BANK OF AMERICA, N.A. AS AGENT, NEW YORK

Free format text: SECURITY INTEREST;ASSIGNOR:KEMET ELECTRONICS CORPORATION;REEL/FRAME:025150/0023

Effective date: 20100930

AS Assignment

Owner name: MOTOROLA SOLUTIONS, INC., ILLINOIS

Free format text: CHANGE OF NAME;ASSIGNOR:MOTOROLA, INC.;REEL/FRAME:025946/0074

Effective date: 20110103

STCF Information on status: patent grant

Free format text: PATENTED CASE

FPAY Fee payment

Year of fee payment: 4

AS Assignment

Owner name: BANK OF AMERICA, N.A., AS COLLATERAL AGENT, NORTH

Free format text: SECURITY AGREEMENT;ASSIGNORS:KEMET CORPORATION;KEMET ELECTRONICS CORPORATION;KEMET BLUE POWDER CORPORATION;REEL/FRAME:042523/0639

Effective date: 20170505

Owner name: BANK OF AMERICA, N.A., AS COLLATERAL AGENT, NORTH CAROLINA

Free format text: SECURITY AGREEMENT;ASSIGNORS:KEMET CORPORATION;KEMET ELECTRONICS CORPORATION;KEMET BLUE POWDER CORPORATION;REEL/FRAME:042523/0639

Effective date: 20170505

AS Assignment

Owner name: KEMET BLUE POWDER CORPORATION, NEVADA

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:BANK OF AMERICA, N.A.;REEL/FRAME:047450/0926

Effective date: 20181107

Owner name: KEMET CORPORATION,, FLORIDA

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:BANK OF AMERICA, N.A.;REEL/FRAME:047450/0926

Effective date: 20181107

Owner name: KEMET ELECTRONICS CORPORATION, FLORIDA

Free format text: RELEASE BY SECURED PARTY;ASSIGNOR:BANK OF AMERICA, N.A.;REEL/FRAME:047450/0926

Effective date: 20181107

MAFP Maintenance fee payment

Free format text: PAYMENT OF MAINTENANCE FEE, 8TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1552); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY

Year of fee payment: 8