US7860668B2 - Pressure measurement using a MEMS device - Google Patents
Pressure measurement using a MEMS device Download PDFInfo
- Publication number
- US7860668B2 US7860668B2 US12/141,326 US14132608A US7860668B2 US 7860668 B2 US7860668 B2 US 7860668B2 US 14132608 A US14132608 A US 14132608A US 7860668 B2 US7860668 B2 US 7860668B2
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- layers
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- time
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- Expired - Fee Related, expires
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0082—Transmitting or indicating the displacement of capsules by electric, electromechanical, magnetic, or electromechanical means
- G01L9/0086—Transmitting or indicating the displacement of capsules by electric, electromechanical, magnetic, or electromechanical means using variations in capacitance
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0072—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
- G01L9/0073—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance using a semiconductive diaphragm
Definitions
- Microelectromechanical systems include micro mechanical elements, actuators, and electronics. Micromechanical elements may be created using deposition, etching, and/or other micromachining processes that etch away parts of substrates and/or deposited material layers or that add layers to form electrical and electromechanical devices.
- MEMS device One type of MEMS device is called an interferometric modulator.
- interferometric modulator or interferometric light modulator refers to a device that selectively absorbs, transmits, and/or reflects light using the principles of optical interference.
- an interferometric modulator may comprise a pair of conductive plates, one or both of which may be transparent and/or reflective in whole or part and capable of relative motion upon application of an appropriate electrical signal.
- one plate may comprise a stationary layer deposited on a substrate and the other plate may comprise a metallic membrane separated from the stationary layer by an air gap.
- the position of one plate in relation to another can change the optical interference of light incident on the interferometric modulator.
- Such devices have a wide range of applications, and it would be beneficial in the art to utilize and/or modify the characteristics of these types of devices so that their features can be exploited in improving existing products and creating new products that have not yet been developed.
- the device of the current invention is intended to measure the pressure about the device, and although it has a similar structure as an interferometric modulator, it may or may not have the optical properties of a typical interference modulator.
- One aspect of the invention is a device for measuring pressure comprising at least one element comprising two layers separated by a space, wherein a dimension of the space changes over a variable time period in response to a voltage applied across the two layers and a measuring module configured to measure the time period, wherein the time period is indicative of the ambient pressure about the device.
- Another aspect of the invention is a method of measuring ambient pressure comprising applying a voltage across two layers of a MEMS device, measuring a value characteristic of the response time of the device, and determining a pressure about the device based on the measured value.
- Yet another aspect of the invention is a device for measuring pressure comprising at least one element comprising two conductive layers separated by a space, wherein a dimension of the space changes over a variable time period in response to a change in voltage applied across the two layers, a measuring module configured to measure current flowing between the two conductive layers as a function of time when there is a change in voltage applied between the two conductive plates, and a processor configured to determine the time difference between when the voltage pulse is applied and when the local maximum of the motion current occurs, wherein the processor is further configured to associate the time difference with an ambient pressure.
- FIG. 1A shows an embodiment of the invention in the released state.
- FIG. 1B shows an embodiment of the invention in the actuated state.
- FIG. 1C shows an applied voltage and the current response of one embodiment of the invention due to the applied voltage.
- FIG. 3 is a diagram of movable mirror position versus applied voltage for one exemplary embodiment of a MEMS device.
- FIG. 4 is an isometric view depicting a portion of one embodiment of the invention as an interferometric modulator display in which the first layer, a movable reflective layer, of a first interferometric modulator is in a relaxed position and the first layer of a second interferometric modulator is in an actuated position.
- FIG. 5 is an exemplary embodiment of the invention.
- an interferometric light modulator Typical usage of an interferometric light modulator involves taking advantage of the optical properties of the device.
- the interferometric light modulator is a bistable device having two states, each with different optical properties. The state a particular modulator is in is controllable by the application of an appropriate electrical signal.
- the interferometric light modulator is well-suited for display applications.
- other properties of a MEMS device having similar structure to an interferometric light modulator can be used for other purposes, e.g. the measurement of the ambient pressure about the device.
- FIG. 1A shows an embodiment of the invention in the relaxed state at a first time
- FIG. 1B shows the same MEMS device in the actuated state at a second time
- FIG. 1C shows an applied voltage, capable of causing actuation, and the current response of one embodiment of the invention due to the applied voltage.
- the MEMS device shown in FIGS. 1A and 1B comprises a first layer 24 and a second layer 26 .
- the two layers may be separated by supports 28 .
- the device takes some time to change states, from the relaxed state shown in FIG. 1A to the actuated state shown in FIG. 1B . It is appreciated that the device may be designed without supports 28 , or that both layers may move towards each other upon the application of a voltage.
- the time it takes for such a MEMS device to actuate or release depends on the design of the device, the voltage signal, and the ambient pressure.
- the actuation time of the modulator is a linear function of the ambient pressure.
- the MEMS device can be used, with appropriate control and measurement circuitry, as a pressure sensor.
- an applied voltage 30 changing from a first value 32 to a second value 34 causes the first layer 24 to begin moving towards the second layer 26 .
- the resulting current response 36 may exhibit multiple peaks, as measured by an ammeter 22 connected between the first layer 24 and the second layer 26 .
- the current response 36 can be described by the following equation:
- the first peak 38 is caused by the change in the applied voltage 30 from a first value 32 to a second value 34 , as described by the first term in the above equation.
- the second peak 40 is caused by the change in capacitance associated with the movement of the first layer 24 relative to the second layer 26 , as described by the second term in the above equation.
- the motion of the first layer 24 relative to the second 26 , and thus, the second peak 40 in the current response 36 is affected by the ambient pressure.
- the first layer 24 picks up speed as it moves towards the second layer 26 there is an increase in the measured current corresponding to the left half of the second peak 40 .
- the first layer 24 begins to slow down as it pushes air out from between it and the second layer 26 . This point is indicated by a maximum in the second peak 40 of the current response 36 .
- the first layer 24 comes to rest, with the device in an actuated state.
- the actuation time of the device can thus be measured in a number of ways. For instance, the actuation time can be considered the amount of time required for the first layer 24 to reach maximum velocity. The actuation time can also be considered the amount of time required for the first layer to move fully from a relaxed state to an actuated state.
- the actuation time may be characterized by measuring the sharpness of the second peak 40 , e.g. measuring the time between when the second peak 40 reaches 50% of the maximum for the first time while increasing and when the second peak 40 reaches 50% of the maximum for the second time while decreasing.
- the release time i.e. the time it takes the change from the actuate state to the release state, is also a function of the pressure and can also be used to measure the ambient pressure to which the device is exposed.
- FIG. 2 is a flowchart which shows a method 50 of measuring pressure according to one embodiment of the invention.
- a voltage is applied across two layers of a MEMS device 72 .
- the current response resulting from this applied voltage is measured 74 .
- a value characteristic of the response time of the device is obtained based on the measured current response 76 .
- the pressure about the device is obtained based on the value characteristic of the response time 78 .
- the bistable nature of such a MEMS device is enabled by a linear mechanical force competing with a nonlinear electrostatic force. This creates hysteresis in the device.
- the position of the first layer 24 is apart from the second layer, and the device is in the relaxed state, indicated as point A.
- the MEMS device remains in the relaxed state until a threshold is reached, indicated as point B.
- the first layer 24 changes position to be closer to the second layer 26 and the MEMS device is in the actuated state, indicated by point C.
- the applied voltage to actuate or release the device can take many forms.
- the applied voltage may be a step function from a release voltage to an actuation voltage.
- a change from a hold voltage (e.g. 5 volts) to an actuation voltage (e.g. 10 volts) can also cause actuation in a device in the release state.
- a step function is shown in FIG. 1C
- a periodic function such as a square wave, may be advantageous to repeatedly measure the pressure about the device as it repeatedly changes states.
- a bilayer MEMS device or an array of such MEMS devices has many advantages over typical pressure sensors.
- the construction of such a MEMS device lends itself to the creation of an array of such devices.
- the use of an array adds redundancy to the measurement. If an element or even a fraction of the elements fail to operate, the device as a whole can still be used to measure pressure.
- the device may be used to measure ambient pressure as a barometer.
- the device may be used as an altimeter.
- the device may be used to measure blood pressure as part of a sphygmomanometer.
- the device may be used to record pressure applied by a user.
- the device is further configured as an interferometric modulator has particularly configurable optical properties, as described below. As such, it may be possible to use the device as part of a touch-screen display.
- the device is described to measure air pressure, it is noted that other forms of pressure may also be measured such a configured MEMS device.
- FIG. 4 is an isometric view depicting a portion of one embodiment of an interferometric modulator array in which a movable reflective layer of a first interferometric modulator is in a relaxed position and a movable reflective layer of a second interferometric modulator is in an actuated position.
- a MEMS device designed to measure pressure can be further configured with specific optical properties.
- standard interference modulators can be used as a general MEMS device to measure ambient pressure.
- the depicted portion of the modulator array in FIG. 4 includes two adjacent interferometric modulators 12 a and 12 b .
- the first layer, a movable reflective layer 14 a is illustrated in a relaxed position at a predetermined distance from the second layer, an optical stack 16 a , which includes a partially reflective layer.
- the movable reflective layer 14 b is illustrated in an actuated position adjacent to the optical stack 16 b.
- optical stack 16 typically comprise several fused layers, which can include an electrode layer, such as indium tin oxide (ITO), a partially reflective layer, such as chromium, and a transparent dielectric.
- ITO indium tin oxide
- the optical stack 16 is thus electrically conductive, partially transparent, and partially reflective, and may be fabricated, for example, by depositing one or more of the above layers onto a transparent substrate 20 .
- the partially reflective layer can be formed from a variety of materials that are partially reflective such as various metals, semiconductors, and dielectrics.
- the partially reflective layer can be formed of one or more layers of materials, and each of the layers can be formed of a single material or a combination of materials.
- the layers of the optical stack 16 are patterned into parallel strips, and may form row electrodes in a display device as described further below.
- the movable reflective layers 14 a , 14 b may be formed as a series of parallel strips of a deposited metal layer or layers (orthogonal to the row electrodes of 16 a , 16 b ) deposited on top of posts 18 and an intervening sacrificial material deposited between the posts 18 . When the sacrificial material is etched away, the movable reflective layers 14 a , 14 b are separated from the optical stacks 16 a , 16 b by a defined gap 19 .
- a highly conductive and reflective material such as aluminum may be used for the reflective layers 14 , and these strips may form column electrodes in a display device.
- the gap 19 remains between the movable reflective layer 14 a and optical stack 16 a , with the movable reflective layer 14 a in a mechanically relaxed state, as illustrated by the pixel 12 a in FIG. 4 .
- the capacitor formed at the intersection of the row and column electrodes at the corresponding pixel becomes charged, and electrostatic forces pull the electrodes together.
- the movable reflective layer 14 is deformed and is forced against the optical stack 16 .
- a dielectric layer within the optical stack 16 may prevent shorting and control the separation distance between layers 14 and 16 , as illustrated by interferometric light modulator 12 b on the right in FIG. 4 .
- the behavior is the same regardless of the polarity of the applied potential difference. In this way, row/column actuation that can control the reflective vs. non-reflective pixel states is analogous in many ways to that used in conventional LCD and other display technologies.
- Some embodiments of the invention may include a display element with which to output the measured ambient pressure.
- the display element may be an LCD display, such as those used in wristwatches, or the display element may be an interferometric array. In the case an interferometric array is used to display the ambient pressure, it may be possible to configure the array to both measure and display the ambient pressure about the device.
- FIG. 5 is an exemplary embodiment of the invention.
- the device 50 comprises a processor 52 , a memory 54 , an input 56 , an image source module 58 , a transceiver 60 , a measuring module 62 , a controller 64 , a driver 66 , and a display 68 .
- a user wishing to measure the pressure about the device indicates this desire using the input 56 .
- the processor 52 passes this instruction the controller 64 , which activates a driver 66 which drives the display 68 .
- a measuring module 62 connected to display 68 measures the current response of at least one of the MEMS device embodied in the display 68 and passes this information to the processor 52 .
- the processor may access memory 54 storing code to calculate the pressure about the device from the measured current response.
- the device may be embodied in a general display unit which receives images from an image source module 58 . Further, the image source module 58 is connected to a transceiver 60 , which may act as a transmitter and a receiver, in order to receiver new images.
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- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Measuring Fluid Pressure (AREA)
- Mechanical Light Control Or Optical Switches (AREA)
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Priority Applications (11)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/141,326 US7860668B2 (en) | 2008-06-18 | 2008-06-18 | Pressure measurement using a MEMS device |
CA2728433A CA2728433A1 (en) | 2008-06-18 | 2009-06-16 | Pressure measurement using a mems device |
KR1020117000537A KR20110016995A (ko) | 2008-06-18 | 2009-06-16 | Mems 장치를 이용한 압력 측정 |
PCT/US2009/047552 WO2009155298A1 (en) | 2008-06-18 | 2009-06-16 | Pressure measurement using a mems device |
RU2011101312/28A RU2011101312A (ru) | 2008-06-18 | 2009-06-16 | Устройство для измерения давления, содержащее микроэлектромеханическую систему |
CN2009801226958A CN102066891B (zh) | 2008-06-18 | 2009-06-16 | 使用微机电系统装置的压力测量 |
JP2011514760A JP2011524988A (ja) | 2008-06-18 | 2009-06-16 | Mems装置を用いた圧力測定 |
CN2012102443804A CN102788657A (zh) | 2008-06-18 | 2009-06-16 | 使用微机电系统装置的压力测量 |
EP09767607A EP2307867A1 (en) | 2008-06-18 | 2009-06-16 | Pressure measurement using a mems device |
BRPI0915349A BRPI0915349A2 (pt) | 2008-06-18 | 2009-06-16 | dispositivos e método de medição de pressão |
US12/956,611 US20110071775A1 (en) | 2008-06-18 | 2010-11-30 | Pressure measurement using a mems device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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US12/141,326 US7860668B2 (en) | 2008-06-18 | 2008-06-18 | Pressure measurement using a MEMS device |
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Application Number | Title | Priority Date | Filing Date |
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US12/956,611 Continuation US20110071775A1 (en) | 2008-06-18 | 2010-11-30 | Pressure measurement using a mems device |
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US20090319220A1 US20090319220A1 (en) | 2009-12-24 |
US7860668B2 true US7860668B2 (en) | 2010-12-28 |
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US12/141,326 Expired - Fee Related US7860668B2 (en) | 2008-06-18 | 2008-06-18 | Pressure measurement using a MEMS device |
US12/956,611 Abandoned US20110071775A1 (en) | 2008-06-18 | 2010-11-30 | Pressure measurement using a mems device |
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US12/956,611 Abandoned US20110071775A1 (en) | 2008-06-18 | 2010-11-30 | Pressure measurement using a mems device |
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US (2) | US7860668B2 (ru) |
EP (1) | EP2307867A1 (ru) |
JP (1) | JP2011524988A (ru) |
KR (1) | KR20110016995A (ru) |
CN (2) | CN102788657A (ru) |
BR (1) | BRPI0915349A2 (ru) |
CA (1) | CA2728433A1 (ru) |
RU (1) | RU2011101312A (ru) |
WO (1) | WO2009155298A1 (ru) |
Cited By (6)
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US20110071775A1 (en) * | 2008-06-18 | 2011-03-24 | Qualcomm Mems Technologies, Inc. | Pressure measurement using a mems device |
US8390916B2 (en) | 2010-06-29 | 2013-03-05 | Qualcomm Mems Technologies, Inc. | System and method for false-color sensing and display |
US8711361B2 (en) | 2009-11-05 | 2014-04-29 | Qualcomm, Incorporated | Methods and devices for detecting and measuring environmental conditions in high performance device packages |
US8714023B2 (en) | 2011-03-10 | 2014-05-06 | Qualcomm Mems Technologies, Inc. | System and method for detecting surface perturbations |
US8904867B2 (en) | 2010-11-04 | 2014-12-09 | Qualcomm Mems Technologies, Inc. | Display-integrated optical accelerometer |
US9094300B1 (en) * | 2009-11-07 | 2015-07-28 | Harris Technology, Llc | Address sharing network |
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US20090201282A1 (en) * | 2008-02-11 | 2009-08-13 | Qualcomm Mems Technologies, Inc | Methods of tuning interferometric modulator displays |
US20110176196A1 (en) * | 2010-01-15 | 2011-07-21 | Qualcomm Mems Technologies, Inc. | Methods and devices for pressure detection |
JP5216041B2 (ja) * | 2010-04-07 | 2013-06-19 | ダイキン工業株式会社 | 透明圧電シートをそれぞれ有するフレーム付透明圧電シート、タッチパネル、および電子装置 |
US8902484B2 (en) | 2010-12-15 | 2014-12-02 | Qualcomm Mems Technologies, Inc. | Holographic brightness enhancement film |
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US20130106918A1 (en) * | 2011-11-02 | 2013-05-02 | Qualcomm Mems Technologies, Inc. | Multilayer light guide assembly |
CN109357609A (zh) * | 2018-11-09 | 2019-02-19 | 福州大学 | 一种大幅面力/位触觉传感器 |
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Also Published As
Publication number | Publication date |
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BRPI0915349A2 (pt) | 2015-10-27 |
WO2009155298A1 (en) | 2009-12-23 |
CN102788657A (zh) | 2012-11-21 |
JP2011524988A (ja) | 2011-09-08 |
EP2307867A1 (en) | 2011-04-13 |
US20090319220A1 (en) | 2009-12-24 |
CN102066891B (zh) | 2012-09-05 |
CN102066891A (zh) | 2011-05-18 |
CA2728433A1 (en) | 2009-12-23 |
US20110071775A1 (en) | 2011-03-24 |
KR20110016995A (ko) | 2011-02-18 |
RU2011101312A (ru) | 2012-07-27 |
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