US7435996B2 - Nanowire light emitting device and method of fabricating the same - Google Patents
Nanowire light emitting device and method of fabricating the same Download PDFInfo
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- US7435996B2 US7435996B2 US11/100,377 US10037705A US7435996B2 US 7435996 B2 US7435996 B2 US 7435996B2 US 10037705 A US10037705 A US 10037705A US 7435996 B2 US7435996 B2 US 7435996B2
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- 239000002070 nanowire Substances 0.000 title claims abstract description 176
- 238000004519 manufacturing process Methods 0.000 title abstract description 14
- 229920000620 organic polymer Polymers 0.000 claims abstract description 39
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 229920000642 polymer Polymers 0.000 claims description 48
- 229920001467 poly(styrenesulfonates) Polymers 0.000 claims description 6
- 229960002796 polystyrene sulfonate Drugs 0.000 claims description 6
- 239000011970 polystyrene sulfonate Substances 0.000 claims description 6
- 229920001940 conductive polymer Polymers 0.000 claims description 4
- 229920000553 poly(phenylenevinylene) Polymers 0.000 claims description 4
- -1 polyphenylene vinylene Polymers 0.000 claims description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 3
- 101150048797 LIPH gene Proteins 0.000 claims description 3
- 229910052783 alkali metal Inorganic materials 0.000 claims description 3
- 150000001340 alkali metals Chemical class 0.000 claims description 3
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- 239000011737 fluorine Substances 0.000 claims description 3
- NHKJPPKXDNZFBJ-UHFFFAOYSA-N phenyllithium Chemical compound [Li]C1=CC=CC=C1 NHKJPPKXDNZFBJ-UHFFFAOYSA-N 0.000 claims description 3
- 229920000265 Polyparaphenylene Polymers 0.000 claims 1
- 238000000034 method Methods 0.000 description 11
- 239000002019 doping agent Substances 0.000 description 9
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 238000007789 sealing Methods 0.000 description 5
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 230000003197 catalytic effect Effects 0.000 description 4
- 239000003792 electrolyte Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910002601 GaN Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000004770 highest occupied molecular orbital Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 description 2
- 239000003574 free electron Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004768 lowest unoccupied molecular orbital Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000005049 silicon tetrachloride Substances 0.000 description 2
- 239000007790 solid phase Substances 0.000 description 2
- IXHWGNYCZPISET-UHFFFAOYSA-N 2-[4-(dicyanomethylidene)-2,3,5,6-tetrafluorocyclohexa-2,5-dien-1-ylidene]propanedinitrile Chemical compound FC1=C(F)C(=C(C#N)C#N)C(F)=C(F)C1=C(C#N)C#N IXHWGNYCZPISET-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000001338 self-assembly Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- FHCPAXDKURNIOZ-UHFFFAOYSA-N tetrathiafulvalene Chemical compound S1C=CSC1=C1SC=CS1 FHCPAXDKURNIOZ-UHFFFAOYSA-N 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
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- B66F—HOISTING, LIFTING, HAULING OR PUSHING, NOT OTHERWISE PROVIDED FOR, e.g. DEVICES WHICH APPLY A LIFTING OR PUSHING FORCE DIRECTLY TO THE SURFACE OF A LOAD
- B66F3/00—Devices, e.g. jacks, adapted for uninterrupted lifting of loads
- B66F3/08—Devices, e.g. jacks, adapted for uninterrupted lifting of loads screw operated
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B66—HOISTING; LIFTING; HAULING
- B66F—HOISTING, LIFTING, HAULING OR PUSHING, NOT OTHERWISE PROVIDED FOR, e.g. DEVICES WHICH APPLY A LIFTING OR PUSHING FORCE DIRECTLY TO THE SURFACE OF A LOAD
- B66F3/00—Devices, e.g. jacks, adapted for uninterrupted lifting of loads
- B66F3/24—Devices, e.g. jacks, adapted for uninterrupted lifting of loads fluid-pressure operated
- B66F3/25—Constructional features
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B25—HAND TOOLS; PORTABLE POWER-DRIVEN TOOLS; MANIPULATORS
- B25B—TOOLS OR BENCH DEVICES NOT OTHERWISE PROVIDED FOR, FOR FASTENING, CONNECTING, DISENGAGING OR HOLDING
- B25B13/00—Spanners; Wrenches
- B25B13/48—Spanners; Wrenches for special purposes
- B25B13/50—Spanners; Wrenches for special purposes for operating on work of special profile, e.g. pipes
- B25B13/5008—Spanners; Wrenches for special purposes for operating on work of special profile, e.g. pipes for operating on pipes or cylindrical objects
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/135—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising mobile ions
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/114—Poly-phenylenevinylene; Derivatives thereof
Definitions
- the present invention relates to a nanowire light emitting device and a method of fabricating the same, and more particularly, to a nanowire light emitting device producible with low manufacturing cost and with a large size and a method of fabricating the nanowire light emitting device.
- GaN-based LED uses gallium-nitride (GaN) semiconductor.
- GaN-based LED has high light emitting efficiency, it has a mismatch problem with a substrate, thus making it difficult to produce a large-sized device.
- Japanese Patent Laid-Open Publication No. Hei 10-326888 discloses a light emitting device comprising a nanowire composed of silicon and a method of fabricating the light emitting device. After a catalytic layer such as gold is deposited on a substrate, the silicon nanowire is grown from the catalytic layer by flowing silicon tetrachloride (SiCl4) gas into a reactor.
- SiCl4 silicon tetrachloride
- U.S. patent Publication No. 2003/0168964 discloses a nanowire light emitting device having a p-n diode structure.
- the lower portion of the-nanowire is an n-type nanowire and the upper portion is a p-type nanowire, and light is emitted from the junction region between the two portions.
- Other components are added using a vapor phase-liquid phase-solid phase (VLS) method in order to fabricate a nanowire light emitting device having the p-n junction structure.
- VLS vapor phase-liquid phase-solid phase
- the n-type nanowire and the p-type nanowire are sequentially formed, thus making it difficult to obtain a high quality p-n junction structure.
- the present invention provides a light emitting device having a nanowire structure in which p-type and n-type doped portions of a nanowire are formed by contacting an organic polymer to the surface of a grown nanowire and a method of fabricating the light emitting device.
- a nanowire light emitting device comprising: a substrate; a first conductive layer formed on the substrate; a plurality of nanowires vertically formed on the first conductive layer, each of the nanowires comprising an n-type doped portion and a p-type doped portion; a light emitting layer between the n-type doped portion and the p-type doped portion; an organic polymer interposed between the p-type doped portion or the n-type doped portion of the nanowires and which dopes the corresponding surface of the nanowires by receiving electrons from the surface of the corresponding doped portion of the nanowires or by providing electrons to the surface of the nanowires; and a second conductive layer formed on the nanowires and the organic polymer.
- the light emitting layer may be a boundary between the p-type doped portion and the n-type doped portion.
- the light emitting layer may be an undoped intrinsic layer interposed between the p-type doped portion and the n-type doped portion.
- the organic polymer may be composed of a polymer having a high electron affinity.
- the organic polymer may be a fluorine-based polymer or a sulfide-based polymer.
- the organic polymer may be a polystyrene sulfonate-based polymer.
- the organic polymer may be composed of a polymer having a low ionization potential.
- the organic polymer may contain an alkali metal.
- the organic polymer may include at least one selected from the group consisting of NaCl10H8, Na2Ph2CO, and LiPh(CH2)6Ph.
- the organic polymer may be a polyphenylene vinylene (PPV) or a CN—PPP-based conductive polymer.
- the nanowires may be composed of ZnO.
- a nanowire light emitting device comprising: a substrate; a first conductive layer formed on the substrate; a plurality of nanowires vertically formed on the first conductive layer, each of the nanowires comprising an n-type doped portion and a p-type doped portion; and a light emitting layer between the n-type doped portion and the p-type doped portion; and a second conductive layer formed on the nanowires, wherein one of the p-type doped portion and the n-type doped portion is formed by adsorbing an organic molecule and the other doped portion is p-type or n-type doped by reaction with an organic polymer surrounding the other doped portion.
- a nanowire light emitting device comprising: a substrate; a first conductive layer formed on the substrate; a plurality of nanowires vertically formed on the first conductive layer; a second conductive layer formed on the nanowires; a wall frame that is interposed between the first conductive layer and the second conductive layer and forms a sealing space; and an electrolyte filling the sealing space.
- a method of fabricating a nanowire light emitting device comprising: forming a first electrode layer on a substrate; forming a plurality of nanowires vertically on the first electrode layer; p-doping or n-doping lower portions of the nanowires by filling a first organic polymer between the lower portions of the nanowires; n-doping or p-doping upper portions of the nanowires with a different polarity from a polarity of the lower portion of the nanowires by filling a second organic polymer between the upper portions of the nanowires; and forming a second electrode layer on the nanowires.
- the p-doping or n-doping of the lower portion of the nanowires may comprise: filling a space between the nanowires with the first organic polymer, which contains molecules having a high electric affinity or a low ionization potential; and etching the first organic polymer in the upper portions of the nanowires.
- the n-doping or p-doping of the upper portions of the nanowires may comprise filling the upper portions of the nanowires with the second organic polymer containing molecules having a low ionization potential or a high electric affinity such that the upper portions of the nanowires have the opposite polarity to the polarity of the lower portions of the nanowires.
- the n-doping or p-doping of the upper portions of the nanowires may comprise: forming a undoped intrinsic portion in the nanowires by filling an insulating polymer between the nanowires on the first organic polymer to a predetermined height; and filling a second organic polymer containing molecules having a low ionization potential or a high electric affinity on the intrinsic portion such that the upper portions of the nanowires have the opposite polarity to the polarity of the lower portions of the nanowires.
- FIG. 1 is a cross-sectional view of a nanowire light emitting device according to a first exemplary embodiment of the present invention.
- FIG. 2 is a cross-sectional view of a nanowire light emitting device according to a second exemplary embodiment of the present invention.
- FIG. 3 is a cross-sectional view of a nanowire light emitting device according to a third exemplary embodiment of the present invention.
- FIG. 4 is a cross-sectional view of a nanowire light emitting device according to a fourth exemplary embodiment of the present invention.
- FIGS. 5 through 10 are cross-sectional views illustrating a method of fabricating a nanowire light emitting device according to an exemplary embodiment of the present invention.
- FIG. 1 is a cross-sectional view of a nanowire light emitting device according to a first exemplary embodiment of the present invention.
- a conductive layer (a first electrode layer) 110 is formed on a substrate 100 and a plurality of nanowires 120 are vertically formed on the conductive layer 110 .
- a second electrode layer 140 is formed on the nanowires 120 .
- a wall frame 130 is interposed between the first conductive layer 110 and the second conductive layer 140 and seals the space where the nanowires 120 are formed.
- the nanowires 120 each have a p-type doped portion 122 , an n-type doped portion 126 and an intrinsic portion 124 , which is a light emitting layer between the p-type doped portion 122 and the n-type doped portion 126 .
- the intrinsic portion 124 is not doped.
- a first organic polymer 152 , an insulating polymer 154 , and a second organic polymer 156 respectively fill the spaces between the p-type doped portion 122 , the intrinsic portion 124 , and the n-type doped portions 126 of the nanowires 120 .
- the substrate 100 may be a silicon wafer, sapphire wafer, or flat metal film.
- the first electrode layer 110 may be deposited of aluminum, gold, or magnesium.
- the second electrode layer 140 may be formed of a transparent electrode, for example, an ITO.
- the wall frame 130 is composed of an insulating material, for example, glass.
- the nanowires 120 may be composed of ZnO, GaN, GaAs, InGaN, CdS, or Si.
- the light emitted from the light emitting device varies according to the material that the nanowires 120 are composed of.
- the nanowires are composed of ZnO, ultraviolet rays are emitted.
- the nanowires are composed of Si, infrared rays are emitted.
- the nanowires are composed of GaN, ultraviolet rays or blue light are emitted.
- the nanowires are composed of InGaN, blue light is emitted.
- the nanowires are composed of CdS, green light is emitted.
- the nanowires are composed of GaAs, red light is emitted.
- the nanowires may each have a diameter of 20-100 nm and a length of 1 ⁇ m.
- the nanowires have a p-i-n junction structure composed of the p-type doped portion 122 , an n-type doped portion 126 , and the intrinsic portion 124 .
- the first polymer 152 may be a polymer having a high electron affinity such as an organic electron acceptor polymer, which is a polymer containing fluorine or sulfur.
- the first polymer 152 may be a fluorsulfate, a fluoracetate, or a sulfonate based polymer.
- polystyrene sulfonate PSS
- the first polymer 152 removes electrons from the surfaces of the nanowires 120 corresponding to the p-type doped portion 122 , holes are formed on the surface of the p-type doped portion 122 .
- the first polymer 152 forms the p-type doped portion 122 in the nanowires 120 because electrons in the nanowires 120 move to the polymer 152 when the energy potential of the lowest unoccupied molecular orbital (LUMO) of the first polymer 152 is similar to or lower than that of the valence band of the nanowires 120 .
- LUMO lowest unoccupied molecular orbital
- the second polymer 156 may be an organic electron donor polymer composed of low ionization potential molecules, for example, an organic electron donor polymer such as NaCl10H8, Na2Ph2CO, or LiPh(CH2)6Ph, which contain an alkali metal, a poly p-phenylene vinylene (PPV) based conductive polymer, or a poly[2-(6-cyano-6′-methylheptyloxy)-1,4-phenylene] (CN—PPP) based conductive polymer.
- PPV poly p-phenylene vinylene
- CN—PPP poly[2-(6-cyano-6′-methylheptyloxy)-1,4-phenylene]
- the second polymer 156 provides electrons to the surface of the nanowires 120 corresponding to the n-type doped portion 126 , free electrons are generated on the surface of the n-type doped portion 126 . In this way, the second polymer 156 forms the n-type doped portion 126 of the nanowires 120 because electrons in the polymer 156 move to the nanowires 120 when the energy potential of the HOMO of the second polymer 156 is similar to or higher than that of the conduction band of the nanowires 120 .
- the insulating polymer 154 prevents electronic contact between the nanowires 120 .
- a photoresist may be used as the insulating polymer 154 .
- holes from the p-type doped portion 122 and the electrons from the n-type doped portion 126 combine in the intrinsic portion 124 when a positive voltage is applied to the first electrode layer 110 connected to the p-type doped portion 122 of the nanowires 120 and a negative voltage is applied to the second electrode layer 140 connected to the n-type doped portion 126 of the nanowires 120 , thus emitting light.
- the light emitted from the intrinsic portion 124 passes through a transparent electrode layer such as the second electrode layer 140 and is emitted to the outside.
- FIG. 2 is a cross-sectional view of a nanowire light emitting device according to a second exemplary embodiment of the present invention.
- a nanowire 120 ′ has a p-i-n junction structure comprising a p-type doped portion 122 ′, an n-type doped portion 126 ′, and an intrinsic portion 124 ′.
- the p-type doped portion 122 ′ is a portion where a p-type dopant is adsorbed onto the circumference of the nanowires 120 ′.
- the p-type dopant may be a molecule having a high electron affinity, for example, an electron acceptor molecule such as tetrafluoro-tetracyano-quinodimethane (F4-TCNQ). Because the p-type dopant removes electrons from the surface of the nanowires 120 ′, holes are formed on the portions of the nanowires 120 ′ where the p-type dopant is adsorbed, thus forming the p-type doped portion 122 ′.
- the n-type doped portion 126 ′ is a portion where an n-type dopant is adsorbed onto the circumference of the nanowires 120 ′.
- the n-type dopant may be a molecule having a low ionization potential, for example an organic electron donor molecule such as bis(ethylenddithio)tetrathiafulvalene (BEDT-TTF). Because the n-type dopant provides electrons to the surface of the nanowires 120 ′, free electrons attach to the surface of the portion of the nanowires 120 ′ where the n-type dopant is adsorbed, thus forming the n-type doped portion 126 ′.
- An insulating polymer 150 is interposed between the nanowires 120 ′, thus preventing electronic contact between the nanowires 120 ′.
- a photoresist may be used as the insulating polymer 150 .
- FIG. 2 The operation of a light emitting device having the structure shown in FIG. 2 is similar to that of the light emitting device shown in FIG. 1 , and thus its description will be omitted.
- the p or n doped portion may be doped by adsorption and the surroundings of the nanowires may be filled with an insulating polymer.
- FIG. 3 is a cross-sectional view of a nanowire light emitting device according to a third exemplary embodiment of the present invention.
- a conductive layer (a first electrode layer) 210 is formed on a substrate 200 and a plurality of nanowires 220 are formed roughly at right angles to the conductive layer 110 .
- a conductive layer (a second electrode layer) 240 is formed on the nanowires 220 .
- a wall frame 230 sealing the space where the nanowires 220 are formed is interposed between the first electrode layer 210 and the second electrode layer 240 .
- the nanowires 220 each include a p-type doped portion 222 and an n-type doped portion 226 contacting each other.
- the contact region of the two doped portions forms a light emitting interface 228 .
- Such a light emitting structure has a p-n junction structure as opposed to the p-i-n junction structure of the first exemplary embodiment.
- a first organic polymer 252 and a second organic polymer 256 respectively fill the spaces between the p-type doped portions 222 and the spaces between the n-type doped portion 226 .
- light is emitted from the light emitting interface 228 when direct current is addressed to both ends of the nanowires 220 .
- the surface of nanowires may be adsorbed by a predetermined dopant and a space between the nanowires may be filled with an insulating polymer.
- FIG. 4 is a cross-sectional diagram of a nanowire light emitting device according to a fourth exemplary embodiment of the present invention.
- a conductive layer (a first electrode layer) 310 is formed on a substrate 300 and a plurality of nanowires 320 are formed roughly at right angles to the conductive layer 310 .
- a conductive layer (a second electrode layer) 340 is formed on the nanowires 320 .
- a wall frame 330 sealing the space where the nanowires 320 are formed is interposed between the first electrode layer 310 and the second electrode layer 340 .
- An electrolyte 350 is filled in the sealing space formed by the first and second electrode layers 310 and 340 and the wall frame 330 .
- ions in the electrolyte 350 are divided and move to upper and lower portions of the electrolyte 350 . That is, negative ions gather around a portion of the nanowires 320 near the first electrode layer 310 , where a positive voltage is applied, and remove electrons from the corresponding surface of the nanowires 320 , thus forming a p-type doped portion 322 while positive ions gather around a portion of the nanowires 320 near the second electrode layer 340 , wherein a negative voltage is applied, and provide electrons to the corresponding surface of the nanowires 320 , thus forming an n-type doped portion 326 .
- a boundary 324 is formed between the p-type doped portion 322 and the n-type doped portion 326 .
- holes from the p-type doped portion 322 of the nanowires 320 and electrons from the n-type doped portion 326 combine and emit light.
- FIG. 5 through FIG. 10 are cross-sectional views illustrating a method of fabricating a nanowire light emitting device according to a fifth exemplary embodiment of the present invention.
- a first conductive layer 410 such as an aluminum layer is deposited on a substrate 400 .
- a plurality of nanowires 420 are formed to a length of 1 ⁇ m on the aluminum layer 410 using a metal-organic-vapor phase epitaxy (MOVPE) method.
- the nanowires 420 may be formed of ZnO using diethyl-zinc (DEZn) and oxygen as a reacting source.
- DEZn diethyl-zinc
- the method of fabricating the nanowires 220 is not limited to the current exemplary embodiment.
- the nanowires 420 may be formed using a conventional vapor phase-liquid phase-solid phase (VLS) method, a self-assembly method, or a method using a metal catalytic layer.
- VLS vapor phase-liquid phase-solid phase
- a space between the nanowires 420 is filled with a first polymer 452 having a high electron affinity such as a poly styrene sulfonate (PSS).
- PSS poly styrene sulfonate
- an upper portion of the first polymer 452 is removed by oxygen plasma or wet etching.
- a p-type doped portion 422 is only formed on a portion of the surface of the nanowires 420 that is in contact with the remaining first polymer 452 .
- a thin photoresist 454 is spin-coated on the first polymer 452 , filling the space between the nanowires 420 .
- the photoresist 454 is then selectively removed by wet etching or oxygen plasma.
- the photoresist 454 having a predetermined height is formed on the p-type doped portion 422 .
- the portion of the nanowires surrounded by the photoresist 422 is not a doped portion and forms an intrinsic portion 424 .
- a second polymer 456 such as a PPV or CN—PPP based polymer, which contains a molecule having a low ionization potential, is formed on the photoresist 454 , filling a space between the nanowires 420 .
- the second polymer 456 provides electrons to a portion of the surface of the nanowires 420 , thereby forming an n-type doped portion 426 .
- the second polymer 456 between the nanowires 420 is selectively removed by wet etching or oxygen plasma such that the upper portion of the n-type doped portion 426 is exposed.
- a second conductive layer 440 covering the nanowires 420 is formed on the photoresist 432 .
- the light emitting device fabricated by the above method has the p-i-n junction structure of FIG. 1 .
- a method of fabricating a light emitting device having the p-n junction structure of FIG. 3 is similar to the above method except that the process of forming an intrinsic portion shown in FIG. 8 is not included, and thus its description will be omitted.
- a method of fabricating a light emitting device having the structure shown in FIG. 2 is similar to the above method except that the process of filling the space between the nanowires with an insulating polymer after respectively adsorbing molecules having a high electron affinity or a low ionization potential on a p-type doped portion or an n-type doped portion, respectively, is not included, and thus a description thereof will be omitted.
- a nanowire light emitting device comprises a homogenous junction, thus has a high light emitting efficiency.
- the device can be mass-produced because the matching with a substrate is excellent. Also, the device can be directly applied to a flat display because it can be produced with a large size.
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Abstract
Description
Claims (6)
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KR1020040023804A KR100624419B1 (en) | 2004-04-07 | 2004-04-07 | Nanowire light emitting device and method of fabricating the same |
KR10-2004-0023804 | 2004-04-07 |
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JP (1) | JP4205075B2 (en) |
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Also Published As
Publication number | Publication date |
---|---|
CN100421271C (en) | 2008-09-24 |
JP4205075B2 (en) | 2009-01-07 |
JP2005303301A (en) | 2005-10-27 |
US20050227391A1 (en) | 2005-10-13 |
KR100624419B1 (en) | 2006-09-19 |
KR20050098539A (en) | 2005-10-12 |
CN1722480A (en) | 2006-01-18 |
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