US6590337B1 - Sealing structure for display device - Google Patents
Sealing structure for display device Download PDFInfo
- Publication number
- US6590337B1 US6590337B1 US09/670,679 US67067900A US6590337B1 US 6590337 B1 US6590337 B1 US 6590337B1 US 67067900 A US67067900 A US 67067900A US 6590337 B1 US6590337 B1 US 6590337B1
- Authority
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- United States
- Prior art keywords
- insulating film
- substrate
- seal
- pixel
- display device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime, expires
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- 238000007789 sealing Methods 0.000 title description 4
- 239000000758 substrate Substances 0.000 claims abstract description 166
- 239000000872 buffer Substances 0.000 claims abstract description 63
- 230000001681 protective effect Effects 0.000 claims abstract description 21
- 239000010408 film Substances 0.000 claims description 166
- 239000010410 layer Substances 0.000 claims description 109
- 239000000463 material Substances 0.000 claims description 30
- 239000011347 resin Substances 0.000 claims description 29
- 229920005989 resin Polymers 0.000 claims description 29
- 239000011159 matrix material Substances 0.000 claims description 26
- 238000005401 electroluminescence Methods 0.000 claims description 24
- 239000002274 desiccant Substances 0.000 claims description 16
- 239000011521 glass Substances 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 239000010409 thin film Substances 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- 239000012044 organic layer Substances 0.000 claims 1
- 238000000926 separation method Methods 0.000 abstract description 7
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000000274 adsorptive effect Effects 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 2
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- OGGKVJMNFFSDEV-UHFFFAOYSA-N 3-methyl-n-[4-[4-(n-(3-methylphenyl)anilino)phenyl]phenyl]-n-phenylaniline Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=CC(=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 OGGKVJMNFFSDEV-UHFFFAOYSA-N 0.000 description 1
- UXVMQQNJUSDDNG-UHFFFAOYSA-L Calcium chloride Chemical compound [Cl-].[Cl-].[Ca+2] UXVMQQNJUSDDNG-UHFFFAOYSA-L 0.000 description 1
- NRCMAYZCPIVABH-UHFFFAOYSA-N Quinacridone Chemical class N1C2=CC=CC=C2C(=O)C2=C1C=C1C(=O)C3=CC=CC=C3NC1=C2 NRCMAYZCPIVABH-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- GQVWHWAWLPCBHB-UHFFFAOYSA-L beryllium;benzo[h]quinolin-10-olate Chemical compound [Be+2].C1=CC=NC2=C3C([O-])=CC=CC3=CC=C21.C1=CC=NC2=C3C([O-])=CC=CC3=CC=C21 GQVWHWAWLPCBHB-UHFFFAOYSA-L 0.000 description 1
- 239000001110 calcium chloride Substances 0.000 description 1
- 229910001628 calcium chloride Inorganic materials 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 238000009125 cardiac resynchronization therapy Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000009849 deactivation Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- DLYUQMMRRRQYAE-UHFFFAOYSA-N tetraphosphorus decaoxide Chemical compound O1P(O2)(=O)OP3(=O)OP1(=O)OP2(=O)O3 DLYUQMMRRRQYAE-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/02—Details
- H05B33/04—Sealing arrangements, e.g. against humidity
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/871—Self-supporting sealing arrangements
- H10K59/8722—Peripheral sealing arrangements, e.g. adhesives, sealants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8423—Metallic sealing arrangements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/846—Passivation; Containers; Encapsulations comprising getter material or desiccants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/874—Passivation; Containers; Encapsulations including getter material or desiccant
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/917—Electroluminescent
Definitions
- the present invention relates to a display device comprising a light-emitting layer such as an electroluminescence (hereinafter referred to as “EL”) element disposed on a substrate, and particularly to a sealing structure for an organic EL display device.
- EL electroluminescence
- FIG. 1A is a plan view of a conventional organic EL display device
- FIG. 1B shows a cross-sectional view taken along line A-A′ of FIG. 1A.
- a plurality of selective drive circuits 2 are disposed for respective pixels on a transparent substrate 1 .
- a planarizing insulating film 3 is formed covering the selective drive circuits 2 .
- a contact hole is created in the planarizing insulating film 3 in a position corresponding to each selective drive circuit 2 .
- Each selective drive circuit 2 is connected to a pixel electrode 4 through this contact hole.
- An emissive layer 5 and a counter electrode 6 are disposed covering those structures.
- display driver circuits 7 a, 7 b are arranged for controlling the selective drive circuits 2 and applying predetermined voltages to the pixel electrodes 4 so as to drive the display region.
- the driver circuits 7 are connected to terminals 9 by wiring 8 .
- a protective casing 10 composed of a metal such as aluminum is arranged covering these structures, and adhered to the transparent substrate 1 using an adhesive 11 made of a resin cured by ultraviolet rays. The sealed space between the protective casing 10 and the transparent substrate 1 is filled with dry nitrogen.
- a desiccant sheet 12 is disposed on the inner surface of the protective casing 10 .
- a selective drive circuit 2 comprises, for example, a plurality of semiconductor elements including thin film transistors (TFT).
- TFT thin film transistors
- a first TFT switches between “on” (conductive state) and “off” (non-conductive state) in response to the output from the driver circuit 7 a.
- the first TFT of a selective drive circuit 2 is turned on by an output from the driver circuit 7 a, the corresponding pixel electrode 4 is applied with a voltage according to an output from the driver circuit 7 b via a second TFT. An electric current thereby flows between the pixel electrode 4 and the counter electrode 6 .
- the emissive layer 5 is configured to emit light when a current is made to flow therein by the pixel electrode 4 and the counter electrode 6 , and emits light at an intensity according to the amount of current flowing between the pixel electrode 4 and the counter electrode 6 .
- the generated light transmits downward in the cross-sectional view through the transparent substrate 1 to be observed.
- the organic EL element In the organic EL element, holes injected from the anode and electrons injected from the cathode recombine within the emissive layer. As a result, organic molecules constituting the emissive layer are excited, generating excitons. Through the process in which these excitons undergo radiation until deactivation, light is emitted from emissive layer. This light radiates outward through the side of the transparent anode via the transparent insulator substrate, resulting in light emission.
- An organic EL layer 5 is known to be susceptible to degradation by moisture.
- a defect such as a pinhole is present in the counter electrode 6
- moisture entering from the pinhole may cause oxidation of the counter electrode 6 or separation between the organic EL layer 5 and the counter electrode 6 , producing dark spots and resulting in deterioration of display quality.
- the protective casing 10 is therefore formed in a shape of a tray covering the display region.
- the space inside the protective casing 10 is filled with an inert gas such as dry nitrogen or helium, and the desiccant sheet 12 is disposed.
- a stepped portion may be provided in the location for arranging the desiccant sheet 12 .
- the protective casing 10 is adhered to the transparent substrate 1 by directly applying the adhesive 11 on the transparent substrate 1 .
- the adhesive may peel off during curing of the adhesive 11 due to the difference in the coefficient of thermal expansion between the transparent substrate 1 and the protective casing 10 , resulting in incomplete sealing.
- the adhesive 11 is applied over the wiring 8 in areas provided with the wiring 8 .
- a disconnection may be caused in the wiring due to stress generated during curing of the adhesive 11 .
- the object of the present invention is to provide an EL display device having a structure preventing separation between the transparent substrate 1 and the protective casing 10 even when there exists a difference in the coefficient of thermal expansion between the transparent substrate 1 and the protective casing 10 , while also preventing disconnection in the wiring 8 .
- the present invention for achieving the above object provides a display device having a display region arranged between first and second substrates composed of different materials, comprising a seal for adhering the first and second substrates to one another, and a buffer layer between the seal and the first and/or second substrate.
- the buffer layer may be an insulating film.
- the display region is configured by laminating a plurality of thin films including an insulating film.
- the insulating film extends to an area between the seal and the first and/or second substrate to serve as the buffer layer.
- the display region comprises selective drive circuits provided for each pixel, a planarizing insulating film formed covering the selective drive circuits, and pixel electrodes disposed on the planarizing insulating film corresponding to each of the selective drive circuits.
- the planarizing insulating film serves as the buffer layer.
- the first substrate may be a transparent insulating substrate
- the second substrate may be a protective casing formed covering the display region.
- first substrate may be made of glass or resin
- second substrate may be made of metal
- the planarizing insulating film extends in an area between the first substrate and the seal.
- the planarizing insulating film may be composed of a material softer compared to the seal and the first substrate.
- the display device includes a terminal connected to the display region via a wiring and exposed outside the display device.
- the buffer layer is arranged between the wiring or the terminal and the seal.
- Another aspect of the present invention is a light-emitting device in which an emissive region having an emissive element is sealed between first and second substrates having different coefficients of thermal expansion, wherein the first and second substrates are adhered to one another by a seal in an area surrounding the emissive region, and a buffer layer is formed between the seal and the first and/or second substrate.
- a further aspect of the above-described device of the present invention is that a desiccant is mixed in the seal.
- the element provided in the display region or the emissive region may be an organic electroluminescence element containing an organic emissive material.
- the emissive region comprises selective drive circuits provided for each pixel, a planarizing insulating film formed covering the selective drive circuits, and pixel electrodes disposed on the planarizing insulating film corresponding to each of the selective drive circuits.
- the planarizing insulating film serves as the buffer layer.
- the display region is configured by laminating a plurality of thin films including an insulating film, and the insulating film serves as the buffer layer. It is therefore unnecessary to separately provide a buffer layer.
- the buffer layer can be formed at the same time of forming the display region, simplifying the manufacturing process.
- the planarizing insulating film serves as the buffer layer.
- a planarizing insulating film has a greater thickness compared to a gate insulating film or an interlayer insulating film, and is softer than glass or the seal.
- the planarizing insulating film is most suitable as the buffer layer.
- the display device includes a terminal connected to the display region via a wiring and exposed outside the display device, and a buffer layer is arranged between the wiring or the terminal and the seal. Such an arrangement prevents disconnection of the wiring caused by the stress generated during curing of the seal.
- FIGS. 1A and 1B show a plan view and a cross-sectional view of a conventional display device.
- FIGS. 2A, 2 B, and 2 C show a plan view and cross-sectional views of a display device according to the present invention.
- FIG. 2A is a plan view of an organic EL display device according to a preferred embodiment of the present invention
- FIG. 2B shows a cross-sectional view taken along line A-A′ of FIG. 2 A.
- Structures similar to those in the conventional device described earlier are labeled with the same reference numerals, and detailed explanation of those structures will not be repeated.
- Arranged on a transparent substrate for respective pixels are selective drive circuits 2 and pixel electrodes 4 .
- An emissive layer 5 and a counter electrode 6 are disposed covering those structures.
- driver circuits 7 a, 7 b are arranged for controlling the selective drive circuits 2 and applying predetermined voltages to the pixel electrodes 4 .
- the driver circuits 7 are connected to terminals 9 by wiring 8 .
- a protective casing 10 is arranged covering the display region. In the present specification, term “substrate” is used also to refer to the protective casing 10 .
- a feature of the present embodiment is that a buffer layer is provided between the seal and a substrate.
- the planarizing insulating film 21 formed covering the selective drive circuits 2 is extended beyond the display region and arranged between the seal 11 and the substrate 1 .
- the planarizing insulating film 21 is positioned between the seal 11 and the substrate 1 .
- the planarizing insulating film 21 is softer compared to the seal 11 and the substrate 1 . Even when stress is imposed on the seal 11 during curing of the seal 11 due to the difference in the coefficient of thermal expansion between the substrate 1 and the protective casing 10 , the planarizing insulating film 21 functions as the buffer layer and absorbs the stress, preventing separation between the substrate 1 and the protective casing 10 .
- the significant feature of the present invention is that a buffer layer softer than the seal 11 is disposed between the seal 11 and the substrate 1 .
- the buffer layer is not limited to a planarizing insulating film 21 , and may be composed of any material softer than the seal 11 .
- the buffer layer must at least be an insulating film.
- the buffer layer can obviously be provided by forming separately.
- the buffer layer can efficiently be formed without adding a manufacturing process by extending one or more of those several layers to the area of the seal 11 .
- the planarizing insulating film 21 is formed at a greater thickness of 1 ⁇ m-2 ⁇ m compared to the gate insulating film 42 and the interlayer insulating film 45 having a thickness of 500 ⁇ -2000 ⁇ , because the planarizing insulating film 21 has the function to planarize unevenness produced by the structures formed in the underlying layers.
- the planarizing insulating film 21 is optimal as the buffer layer because of its sufficient thickness.
- Materials such as acrylic resin, silicon oxide film, silicon nitride film, and positive type resist material can be used as the material for the planarizing insulating film 21 .
- acrylic resins and positive type resist materials which are suitable for processing a large area, are more preferable compared to rotational application type materials used for semiconductor chips, namely, SOG films.
- SOG films rotational application type materials used for semiconductor chips, namely, SOG films.
- the planarizing insulating film 21 it is preferable to select a material having the minimum possible moisture permeability because the organic EL element having an emissive layer is easily deteriorated by moisture. Display quality becomes degraded when moisture enters the sealed space formed by the substrate 1 and the protective casing 10 .
- the film 21 By increasing the thickness of the planarizing insulating film 21 , the film 21 demonstrates a superior performance as a buffer layer. However, at the same time, area of the film 21 exposed outside becomes increased, in turn increasing the amount of moisture penetrating from the exposed portions. It is therefore preferable to form the planarizing insulating film 21 at a minimum possible thickness within the range that the film 21 can sufficiently function as the buffer layer.
- planarizing insulating film 21 Using any of the above-mentioned materials of the planarizing insulating film 21 , slight permeation of moisture is inevitable. To deal with this problem, desiccant powder can be mixed in the seal 11 . The desiccant powder adsorbs the moisture permeating through the planarizing insulating film 21 to accomplish a more reliable prevention of deterioration of the organic EL element. Because the planarizing insulating film 21 is 1 ⁇ m-2 ⁇ m as described above, moisture permeation through the planarizing insulating film 21 into the sealed space can be prevented by mixing the desiccant in the seal 11 , without requiring to mix the desiccant in the planarizing insulating film 21 . The desiccant is mixed into the seal 11 before curing.
- the desiccant By curing the resin after the mixture is thoroughly mixed, the desiccant can uniformly be mixed in the seal 11 .
- a substance having a chemically adsorptive property is used as the desiccant.
- chemically adsorptive desiccants include oxides of alkali earth metals such as calcium oxide and barium oxide, halides of alkali earth metals such as calcium chloride, and phosphorus pentaoxide.
- Physically adsorptive desiccants such as silica gel are not appropriate because such desiccants discharge adsorbed moisture at high temperatures.
- FIG. 2C is a cross-sectional view of an example configuration showing one pixel of an active matrix type organic EL display device according to the present embodiment.
- a gate electrode 41 made of a refractory metal such as Cr or Mo is formed on an insulator substrate 1 made of quartz glass, non-alkali glass, or a similar material.
- a gate insulating film 42 composed of SiO 2 and an active layer 43 composed of p-Si film are sequentially formed.
- the active layer 43 includes a channel 43 c located above the gate electrode 41 .
- ion doping is performed by using a stopper insulating film 44 located over the channel 43 c as a mask.
- the gate electrode 41 , the gate insulating film 42 , and the active layer 43 are arranged in a configuration of a TFT, and constitute a part of the selective drive circuit.
- the TFT is formed in the so-called LDD structure.
- An interlayer insulating film 45 formed by a sequential lamination of a SiO 2 film, a SiN film, and a SiO 2 film is provided on the entire surface over the gate insulating film 42 , the active layer 43 , and the stopper insulating film 44 .
- a contact hole formed in a position corresponding to the drain 43 d is filled with a metal such as Al to form a connection with a power source line 46 .
- a planarizing insulating film 3 made of an organic resin or a similar material is formed over the entire surface for planarization. Subsequently, a contact hole is formed in the planarizing insulating film 3 in a position corresponding to the source 43 s.
- a transparent electrode 4 composed of ITO (indium tin oxide) or a similar material is formed through this contact hole to contact the source 43 s.
- the emissive layer 5 is an emissive element layer comprising a first hole-transport layer 5 a composed of MTDATA (4,4′,4′′-tris(3-methylphenylphenylamino)triphenylamine), a second hole-transport layer 5 b composed of TPD (N,N′-diphenyl-N,N′-di(3-methylphenyl)-1,1′-biphenyl-4,4′-diamine), an emissive layer 5 c formed of Bebq 2 (bis(10-hydroxybenzo[h]quinolinato)beryllium) including quinacridone derivatives, and an electron transport layer 5 d made of Bebq 2 .
- the above-described structure is disclosed in, for example, Japanese Patent Applications No. Hei 11-22183 and No. Hei 11-22184.
- a TFT having a bottom gate type structure wherein the gate electrode is located closer to the substrate compared to the active layer is described herein as an example.
- the TFT may have any type of structure as long as the TFT can apply a voltage selectively to each one of the plurality of pixel electrodes.
- the TFT may have a top gate type structure wherein the active layer is disposed closer to the substrate compared to the gate electrode.
- an organic EL display device having a display region configured by sandwiching an emissive layer with electrodes is used as an example in the above-described embodiment, the present invention is not limited to such a device.
- the present invention can similarly be implemented in various display and emissive devices such as vacuum fluorescent display (VFD) devices and LED devices.
- VFD vacuum fluorescent display
- an organic EL display device is especially vulnerable to moisture such that any slight separation between the substrates cannot be overlooked. Accordingly, prevention of separation between substrates by using the present invention is most beneficial when applied in an organic EL display device.
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
Claims (65)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11-277088 | 1999-09-29 | ||
JP27708899A JP3423261B2 (en) | 1999-09-29 | 1999-09-29 | Display device |
Publications (1)
Publication Number | Publication Date |
---|---|
US6590337B1 true US6590337B1 (en) | 2003-07-08 |
Family
ID=17578619
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/670,679 Expired - Lifetime US6590337B1 (en) | 1999-09-29 | 2000-09-27 | Sealing structure for display device |
Country Status (4)
Country | Link |
---|---|
US (1) | US6590337B1 (en) |
JP (1) | JP3423261B2 (en) |
KR (2) | KR100407445B1 (en) |
TW (1) | TW463529B (en) |
Cited By (56)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020057565A1 (en) * | 2000-11-14 | 2002-05-16 | Satoshi Seo | Light emitting device |
US20030132917A1 (en) * | 2002-01-11 | 2003-07-17 | Yuen Siltex Peter | Ruggedized, water sealed, security-enhanced touchpad assembly |
US20030173895A1 (en) * | 2002-01-31 | 2003-09-18 | Yoshifumi Kato | Organic electroluminescent color display unit |
US20030209979A1 (en) * | 2002-05-07 | 2003-11-13 | Osram Opto Semiconductors Gmbh | Encapsulation for electroluminescent devices |
US20030214232A1 (en) * | 2002-05-07 | 2003-11-20 | Ewald Guenther | Uniform deposition of organic layer |
US20030231486A1 (en) * | 2002-06-14 | 2003-12-18 | Tseng-Lu Chien | Weather proof treatment for electro-luminescent |
US20040012870A1 (en) * | 2002-05-30 | 2004-01-22 | Ryuji Nishikawa | Organic EL panel |
US20040012549A1 (en) * | 2002-05-09 | 2004-01-22 | Sanyo Electric Co., Ltd. | Electroluminescent display device and manufacturing method of the same |
US20040012329A1 (en) * | 2002-06-07 | 2004-01-22 | Seiko Epson Corporation | Organic electroluminescent device, method of manufacturing organic electroluminescent device, and electronic apparatus |
US20040051445A1 (en) * | 2002-06-21 | 2004-03-18 | Hitachi Displays, Ltd. | Display device |
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JP2001102166A (en) | 2001-04-13 |
KR20030079876A (en) | 2003-10-10 |
JP3423261B2 (en) | 2003-07-07 |
TW463529B (en) | 2001-11-11 |
KR20010050683A (en) | 2001-06-15 |
KR100512510B1 (en) | 2005-09-06 |
KR100407445B1 (en) | 2003-11-28 |
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