US6054729A - Gallium antimonide complementary HFET - Google Patents
Gallium antimonide complementary HFET Download PDFInfo
- Publication number
- US6054729A US6054729A US09/185,118 US18511898A US6054729A US 6054729 A US6054729 A US 6054729A US 18511898 A US18511898 A US 18511898A US 6054729 A US6054729 A US 6054729A
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- US
- United States
- Prior art keywords
- type
- chfet
- antimonide
- gasb
- hfet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- VTGARNNDLOTBET-UHFFFAOYSA-N gallium antimonide Chemical compound [Sb]#[Ga] VTGARNNDLOTBET-UHFFFAOYSA-N 0.000 title claims abstract description 27
- 230000000295 complement effect Effects 0.000 title claims abstract description 15
- 229910005542 GaSb Inorganic materials 0.000 claims abstract description 28
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 claims abstract description 19
- 108091006146 Channels Proteins 0.000 claims abstract description 17
- 108090000699 N-Type Calcium Channels Proteins 0.000 claims abstract description 11
- 102000004129 N-Type Calcium Channels Human genes 0.000 claims abstract description 10
- 108010075750 P-Type Calcium Channels Proteins 0.000 claims abstract description 8
- 230000005669 field effect Effects 0.000 claims abstract description 8
- 239000000463 material Substances 0.000 claims description 20
- 239000011777 magnesium Substances 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 9
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 6
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical group [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 6
- 229910052749 magnesium Inorganic materials 0.000 claims description 6
- 239000002019 doping agent Substances 0.000 claims 2
- 238000000034 method Methods 0.000 abstract description 10
- 239000007943 implant Substances 0.000 abstract description 9
- 230000008569 process Effects 0.000 abstract description 9
- 238000001451 molecular beam epitaxy Methods 0.000 abstract description 4
- 229910000927 Ge alloy Inorganic materials 0.000 abstract description 3
- BYDQGSVXQDOSJJ-UHFFFAOYSA-N [Ge].[Au] Chemical compound [Ge].[Au] BYDQGSVXQDOSJJ-UHFFFAOYSA-N 0.000 abstract description 3
- 230000009467 reduction Effects 0.000 abstract description 2
- 230000037230 mobility Effects 0.000 description 17
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 238000005468 ion implantation Methods 0.000 description 6
- LVQULNGDVIKLPK-UHFFFAOYSA-N aluminium antimonide Chemical compound [Sb]#[Al] LVQULNGDVIKLPK-UHFFFAOYSA-N 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 238000002955 isolation Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 2
- 239000010953 base metal Substances 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- -1 for example Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
- H01L21/26546—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds of electrically active species
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/802—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with heterojunction gate, e.g. transistors with semiconductor layer acting as gate insulating layer, MIS-like transistors
Definitions
- the present invention relates to a complementary heterojunction field effect transistor (CHFET) and a method for making a CHFET, and more particularly, to a CHFET in which the channels for both the p-FET device and the n-FET device forming the complementary structure are formed from either gallium antimonide (GaSb) or indium antimonide (InSb) to provide relatively high electron and hole mobility thereby improving overall performance; the CHFET being formed with common ohmic contacts thereby eliminating the need for separate ohmic contacts for each of the p and n-FET devices to simplify the process for making the CHFET relative to known devices.
- GaSb gallium antimonide
- InSb indium antimonide
- CHFET Complementary heterojunction field effect transistors
- Such CHFET devices normally include both an n-type FET and a p-type FET formed in a vertically stacked configuration on the same substrate such as gallium arsenide (GaAs).
- GaAs gallium arsenide
- Different materials are known to be used for both the n and p channel layers.
- GaSb gallium antimonide
- InAs indium arsenide
- gallium arsenic antimonide GaAsSb
- indium gallium arsenide InGaAs
- the particular materials for the p and n-type channel layers are known to be selected, at least in part, to form quantum wells to improve the overall performance of the device.
- the performance of such CHFETs is limited by the relatively low mobility of the p-type channel device which limits the speed and increases the overall power consumption of the device.
- CHFET devices Another characteristic of such CHFET devices is that the yield is limited to about 6,000 gate circuits, because of the relative complexity of the fabrication process, known to require about 14 mask levels. Many of the mask levels are due, in part, to separate contacts for both the p and n-type FET devices, for example, as disclosed in U.S. Pat. Nos. 5,192,698; 5,429,963; and 5,479,033.
- GaSb gallium antimonide
- the present invention relates to a complementary heterojunction field effect transistor (CHFET) in which the channels for the p-FET device and the n-FET device forming the complementary FET are formed from gallium antimonide (GaSb) or indium antimonide (InSb).
- Indium antimonide (InSb) and gallium antimonide (GaSb) provides for relatively high electron mobility as well as high hole mobility.
- An n-type gallium antimonide (GaSb) or indium antimonide (InSb) HFET structure is grown, for example, by molecular beam epitaxy in order to obtain the highest electron or hole mobility.
- a complementary p-type or HFET is formed by p-type doping of a cap layer in order to thereby eliminate the need for two implants for channel doping.
- a common gold germanium alloy contact is used for both the p and n-type channel devices, thereby eliminating the need for separate ohmic contacts resulting in a substantial reduction in the number of mask levels and, thus, complexity in fabricating the device.
- FIG. 1 is a diagram of energy gap vs. lattice constant for various semiconductor materials illustrating the relative electron mobility and hole mobility.
- FIG. 2 is an energy band diagram of a gallium antimonide (GaSb) quantum well.
- FIG. 3 is a sectional view in elevation of a CHFET in accordance with the present invention.
- FIG. 4 is a diagram illustrating the steps in fabricating the CHFET illustrated in FIG. 3.
- FIG. 5 is a diagram illustrating the ion concentration at 20 keV for a Te-implant into a gallium antimonide (GaSb) material.
- the present invention relates to a complementary heterojunction field effect transistor (CHFET) formed as a vertically stacked layered device in which an n-type or p-type FET is formed by molecular beam epitaxy with n-type or p-type channel, formed from either a indium antimonide (InSb) or gallium antimonide (GaSb) material in order to provide relatively high electron or hole mobility.
- a p-type or n-type doping material such as magnesium (Mg) or tellerium (Te) respectively, is ion-implanted into a cap layer to form a high electron or hole mobility p-type or n-type HFET in order to eliminate the need for dual implants for channel doping.
- a single common alloy ohmic contact is used for the p and n-type devices to eliminate the need for separate contacts in order to reduce the complexity of the process.
- the performance is limited by the low mobility of the p-channel, for example, 400 cm 2 /Vs and the complexity of the fabrication process known to include 14 mask levels.
- the low mobility of the p-channel is known to require higher power for the device, as well as inhibit the overall speed of the device.
- the present invention utilizes indium antimonide (InSb) or gallium antimonide (GaSb) for the channels of the n-type FET and the p-type HFET, forming the CHFET.
- InSb indium antimonide
- GaSb gallium antimonide
- undoped gallium antimonide (GaSb) is a p-type material with a hole mobility of 850 cm 2 /Vs more than double that of GaAs.
- Indium antimonide (InSb) is also preferred because of the lower operating voltage (i.e. 0.2 volts) which provides for lower power consumption.
- the band gap energy of gallium antimonide (GaSb) is about 0.8 eV, which makes it suitable for low power (1.5 volt) operation.
- An important aspect of the invention is that the CHFET is formed with a quantum well.
- the quantum well is formed by sandwiching a gallium antimonide (GaSb) p-channel between layers of aluminum antimonide (AlSb). As shown in FIG. 2, gallium antimonide (GaSb) has nearly equal conduction and valance band discontinuities of 0.4 eV with the aluminum antimonide (AlSb).
- the quantum well can also be formed utilizing by sandwiching indium antimonide (InSb) between layers of aluminum antimonide (A1 Sb)
- FIG. 3 illustrates a cross-sectional view of a CHFET formed in accordance with the present invention.
- the CHFET generally identified with the reference numeral 20, includes a suitable substrate 22, for example, gallium arsenide (GaAs) having a thickness, for example, of 4 milli-inches.
- GaAs gallium arsenide
- Two embodiments of the invention are contemplated. The structure for both embodiments is essentially the same except for the materials. However, only the preferred alternative embodiment is described in detail.
- a p-type FET is epitaxially grown on the substrate 22 and an n-type FET is formed on top of the p-type FET.
- a cap layer formed from gallium antimonide (GaSb) or indium antimonide (InSb) is eptiaxially grown on top of the p-FET and doped within n-type material, such as tellerium (Te), as illustrated in FIG. 5.
- a p-type HFET is epitaxially grown, for example, by molecular beam epitaxy, on the substrate 22.
- An important aspect of the invention is that both the p-type PET and the n-type FET forming the complementary HFET utilize gallium antimonide (GaSb) or indium antimonide (InSb) for the channel layer.
- undoped gallium antimonide provides relatively high hole mobility
- gallium antimonide GaSb
- gallium antimonide GaSb doped with n-type materials, such as tellerium (Te)
- Indium antimonide also provides for relatively high electron and hole mobility.
- an n-type FET is preferably formed by epitaxial growth on the substrate 22 and includes a buffer layer 24, a n-type channel 26, a barrier layer 28 and a cap layer 30.
- the buffer layer 24 is formed from a relatively wide band gap material, such as aluminum antimonide (AlSb), having a thickness, for example, 1 micron.
- AlSb aluminum antimonide
- the n-type channel material 26 is formed from, for example tellerium doped gallium antimonide (GaSb) or indium antimonide (InSb) and is grown on top of the buffer layer 24 to a thickness of 125 angstroms.
- a barrier layer formed from a relatively wide band gap material, such as aluminum antimonide (AlSb) is epitaxially grown on top of the n-type channel layer 26 to a thickness of 250 angstroms.
- the buffer layer 24, n-type channel 26 and barrier layer 28 form the quantum well illustrated in FIG. 2 to provide a relatively low power operation device.
- a cap layer 30 forms a channel for the p-type HFET.
- the cap layer 30 is epitaxially grown to a thickness of 50 angstroms on top of the barrier layer 28.
- a p-type doping material for example, magnesium (Mg) is implanted into the cap layer 30, for example, by ion implantation, to form an p-type FET.
- the structure is aligned in step 2 for the ion implantation step.
- Ion implantation is used to dope the cap layer 30 with a p-type doping material, such as magnesium (Mg), to form an p-channel for the p-type HFET.
- Mg magnesium
- the magnesium (Mg) doping material may be implanted with 110 keV energy at a dose of 10 14 /cm 2 with the wafer tilted 7° with a 30° rotation.
- a mask 32 is formed from either aluminum or photoresist to define the implantation area 34 (FIG. 4) in the cap layer 30. As shown in FIG. 4, the mask 32 is aligned with the structure 20 to enable the magnesium (Mg) ions to be implanted as discussed above, to form the p-channel for the p-HFETs. If a photoresist is used to form the mask 32 for the ion implantation area 34, the mask 32 is stripped in step 5. Subsequently, rapid thermal annealing, for example 600° C. for 30 seconds, is used to activate the implant and remove any radiation damage. An important aspect of the invention is that only a single implant is required for channel doping.
- an isolation implant is used to separate the CHFETs 20.
- an isolation mask is formed to define the isolation implant areas 36, 38, etc. (FIG. 3).
- the isolation implants are formed by ion implantation of an impurity, such as boron ions, at selected energy levels in order to destroy the characteristics of the various layers 22, 24, 26, 28 and 30 of the device in order to provide isolation between adjacent CHFETs 20.
- Another important aspect of the invention relates to use of a common ohmic contact for both the p-type and n-type devices and takes advantage of the fact that gold contacts are ohmic on a p-GaSb material and form a rectifying shortly diode on an n-GaSb material.
- common ohmic contacts 40 and 42 are formed on the device 20.
- the contact areas 40 and 42 are patterned on a mask (not shown).
- a layer of photoresist is spun on top of the device.
- the mask, patterned with the electrodes 40 and 42, is then placed on top of the photoresist.
- Reactive ion etching may then be used to etch into the various layers of the device, down to the buffer layer 24 to form the electrode areas 40 and 42.
- a gold germanium alloy for example, 88% gold (Au), 12% germanium (Ge), may then be deposited on top of the device to form the common electrodes 40 and 42.
- the excess metal and photoresist is then lifted off by conventional techniques the structure is then subjected to rapid annealing again, as discussed above.
- a gate metal in the metal gate region 44 is formed by a similar process in step 8, except that reactive ion etching is not required.
- a layer of photoresist (not shown) may be spun on top of the device.
- a mask configured in the shape of a base metal contact 44 may then be patterned and placed over the photoresist.
- a photoresist may then be exposed in a conventional manner, to expose the tellerium (Te) doping layer 31.
- the gate metal for example, a Cr--Au alloy, chromium (Cr) covered with gold (Au) is then deposited on top of the device with excess metal being lifted off by a conventional lift-off process to form the CHFET 20 in accordance with the present invention.
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
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- High Energy & Nuclear Physics (AREA)
- Manufacturing & Machinery (AREA)
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- Junction Field-Effect Transistors (AREA)
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Abstract
Description
Claims (5)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/185,118 US6054729A (en) | 1996-10-11 | 1998-11-03 | Gallium antimonide complementary HFET |
US09/520,897 US6384432B1 (en) | 1996-10-11 | 2000-03-07 | Gallium antimonide complementary HFET |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/729,115 US5940695A (en) | 1996-10-11 | 1996-10-11 | Gallium antimonide complementary HFET |
US09/185,118 US6054729A (en) | 1996-10-11 | 1998-11-03 | Gallium antimonide complementary HFET |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
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US08/729,115 Division US5940695A (en) | 1996-10-11 | 1996-10-11 | Gallium antimonide complementary HFET |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
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US09/520,897 Division US6384432B1 (en) | 1996-10-11 | 2000-03-07 | Gallium antimonide complementary HFET |
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US6054729A true US6054729A (en) | 2000-04-25 |
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US08/729,115 Expired - Lifetime US5940695A (en) | 1996-10-11 | 1996-10-11 | Gallium antimonide complementary HFET |
US09/185,118 Expired - Lifetime US6054729A (en) | 1996-10-11 | 1998-11-03 | Gallium antimonide complementary HFET |
US09/520,897 Expired - Lifetime US6384432B1 (en) | 1996-10-11 | 2000-03-07 | Gallium antimonide complementary HFET |
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US08/729,115 Expired - Lifetime US5940695A (en) | 1996-10-11 | 1996-10-11 | Gallium antimonide complementary HFET |
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US09/520,897 Expired - Lifetime US6384432B1 (en) | 1996-10-11 | 2000-03-07 | Gallium antimonide complementary HFET |
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JP (1) | JP2950802B2 (en) |
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US7170105B1 (en) | 2004-10-20 | 2007-01-30 | Hrl Laboratories, Llc | Type II interband heterostructure backward diodes |
US7700969B1 (en) | 2007-01-30 | 2010-04-20 | Hrl Laboratories, Llc | Type II interband heterostructure backward diodes |
US20110180846A1 (en) * | 2010-01-26 | 2011-07-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for Forming Antimony-Based FETs Monolithically |
US20110223592A1 (en) * | 2004-04-14 | 2011-09-15 | Collis Matthew P | Multiple fluorophore detector system |
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US6893947B2 (en) * | 2002-06-25 | 2005-05-17 | Freescale Semiconductor, Inc. | Advanced RF enhancement-mode FETs with improved gate properties |
US6825506B2 (en) * | 2002-11-27 | 2004-11-30 | Intel Corporation | Field effect transistor and method of fabrication |
US7135411B2 (en) * | 2004-08-12 | 2006-11-14 | Northrop Grumman Corporation | Method for etching mesa isolation in antimony-based compound semiconductor structures |
US7429747B2 (en) * | 2006-11-16 | 2008-09-30 | Intel Corporation | Sb-based CMOS devices |
JP2013207020A (en) * | 2012-03-28 | 2013-10-07 | Nippon Telegr & Teleph Corp <Ntt> | Field effect transistor and manufacturing method of the same |
US8891573B2 (en) | 2012-05-14 | 2014-11-18 | Arizona Board Of Regents | 6.1 angstrom III-V and II-VI semiconductor platform |
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US6635907B1 (en) * | 1999-11-17 | 2003-10-21 | Hrl Laboratories, Llc | Type II interband heterostructure backward diodes |
WO2004094456A2 (en) | 2003-04-18 | 2004-11-04 | Becton, Dickinson And Company | Immuno-amplification |
US9499858B2 (en) | 2003-04-18 | 2016-11-22 | Becton, Dickinson And Company | Immuno-amplification |
US20110223592A1 (en) * | 2004-04-14 | 2011-09-15 | Collis Matthew P | Multiple fluorophore detector system |
US8940882B2 (en) | 2004-04-14 | 2015-01-27 | Becton, Dickinson And Company | Multiple fluorophore detector system |
US7170105B1 (en) | 2004-10-20 | 2007-01-30 | Hrl Laboratories, Llc | Type II interband heterostructure backward diodes |
US7700969B1 (en) | 2007-01-30 | 2010-04-20 | Hrl Laboratories, Llc | Type II interband heterostructure backward diodes |
US20110180846A1 (en) * | 2010-01-26 | 2011-07-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for Forming Antimony-Based FETs Monolithically |
US8253167B2 (en) | 2010-01-26 | 2012-08-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for forming antimony-based FETs monolithically |
US8629012B2 (en) | 2010-01-26 | 2014-01-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for forming antimony-based FETs monolithically |
Also Published As
Publication number | Publication date |
---|---|
US6384432B1 (en) | 2002-05-07 |
JPH10125902A (en) | 1998-05-15 |
JP2950802B2 (en) | 1999-09-20 |
US5940695A (en) | 1999-08-17 |
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