US6036780A - Mechanism for detecting particulate formation and/or failures in the removal of gas from a liquid - Google Patents
Mechanism for detecting particulate formation and/or failures in the removal of gas from a liquid Download PDFInfo
- Publication number
 - US6036780A US6036780A US08/920,539 US92053997A US6036780A US 6036780 A US6036780 A US 6036780A US 92053997 A US92053997 A US 92053997A US 6036780 A US6036780 A US 6036780A
 - Authority
 - US
 - United States
 - Prior art keywords
 - chamber
 - tube
 - recited
 - gas
 - liquid
 - Prior art date
 - Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
 - Expired - Lifetime
 
Links
- 239000007788 liquid Substances 0.000 title claims abstract description 49
 - 230000015572 biosynthetic process Effects 0.000 title abstract description 4
 - 230000007246 mechanism Effects 0.000 title description 5
 - 239000007789 gas Substances 0.000 claims abstract description 108
 - 238000012545 processing Methods 0.000 claims abstract description 37
 - 238000001514 detection method Methods 0.000 claims abstract description 7
 - 239000000463 material Substances 0.000 claims description 16
 - 239000004065 semiconductor Substances 0.000 claims description 16
 - BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 10
 - 238000000151 deposition Methods 0.000 claims description 10
 - 230000008021 deposition Effects 0.000 claims description 7
 - 238000004891 communication Methods 0.000 claims description 5
 - 239000011261 inert gas Substances 0.000 claims description 4
 - 239000011148 porous material Substances 0.000 claims description 3
 - 230000000007 visual effect Effects 0.000 claims description 3
 - 239000011521 glass Substances 0.000 claims description 2
 - 239000010453 quartz Substances 0.000 claims description 2
 - VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
 - 238000005229 chemical vapour deposition Methods 0.000 claims 2
 - 239000012530 fluid Substances 0.000 abstract description 22
 - 238000010926 purge Methods 0.000 abstract description 16
 - 239000002245 particle Substances 0.000 abstract description 14
 - 238000012384 transportation and delivery Methods 0.000 abstract description 13
 - 238000011143 downstream manufacturing Methods 0.000 abstract description 6
 - 230000007547 defect Effects 0.000 abstract 1
 - 239000012528 membrane Substances 0.000 description 11
 - 239000007787 solid Substances 0.000 description 7
 - 239000000843 powder Substances 0.000 description 6
 - 230000008901 benefit Effects 0.000 description 4
 - 239000001307 helium Substances 0.000 description 4
 - 229910052734 helium Inorganic materials 0.000 description 4
 - SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 4
 - 238000004519 manufacturing process Methods 0.000 description 4
 - 230000007257 malfunction Effects 0.000 description 3
 - 239000011343 solid material Substances 0.000 description 3
 - IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
 - 239000002178 crystalline material Substances 0.000 description 2
 - 239000000284 extract Substances 0.000 description 2
 - 238000000034 method Methods 0.000 description 2
 - 238000012546 transfer Methods 0.000 description 2
 - 239000011364 vaporized material Substances 0.000 description 2
 - 238000009825 accumulation Methods 0.000 description 1
 - QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
 - 230000009286 beneficial effect Effects 0.000 description 1
 - 238000013461 design Methods 0.000 description 1
 - 239000003989 dielectric material Substances 0.000 description 1
 - 230000006872 improvement Effects 0.000 description 1
 - 238000011065 in-situ storage Methods 0.000 description 1
 - 238000007689 inspection Methods 0.000 description 1
 - 230000003993 interaction Effects 0.000 description 1
 - 238000012423 maintenance Methods 0.000 description 1
 - 238000012986 modification Methods 0.000 description 1
 - 230000004048 modification Effects 0.000 description 1
 - 229910052757 nitrogen Inorganic materials 0.000 description 1
 - 239000001301 oxygen Substances 0.000 description 1
 - 229910052760 oxygen Inorganic materials 0.000 description 1
 - 239000013618 particulate matter Substances 0.000 description 1
 - 230000000737 periodic effect Effects 0.000 description 1
 - 230000008569 process Effects 0.000 description 1
 - 238000005389 semiconductor device fabrication Methods 0.000 description 1
 - 229910001220 stainless steel Inorganic materials 0.000 description 1
 - 239000010935 stainless steel Substances 0.000 description 1
 - 239000000126 substance Substances 0.000 description 1
 - 239000012780 transparent material Substances 0.000 description 1
 
Images
Classifications
- 
        
- C—CHEMISTRY; METALLURGY
 - C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
 - C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
 - C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
 - C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
 - C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
 - C23C16/4485—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation without using carrier gas in contact with the source material
 
 
Definitions
- Vacuum port 46 is shown in gaseous communication between degas chamber 30 and a vacuum pump 62 as well as other chambers 64.
 - throttle valve 66 When throttle valve 66 is open, vacuum pump 62 extracts motive gas from chamber 30 through vacuum port 46, as well as other gases from other chambers shown as reference numeral 64. Gases within chamber 64 may be dissimilar from the motive gas such that when vacuum pump 62 is off or throttle 66 is closed, backstreaming may occur. Backstreaming is particularly a problem if cut-off valves 50 and 70 are not turned off.
 
Landscapes
- Chemical & Material Sciences (AREA)
 - General Chemical & Material Sciences (AREA)
 - Chemical Kinetics & Catalysis (AREA)
 - Engineering & Computer Science (AREA)
 - Materials Engineering (AREA)
 - Mechanical Engineering (AREA)
 - Metallurgy (AREA)
 - Organic Chemistry (AREA)
 - Degasification And Air Bubble Elimination (AREA)
 
Abstract
Description
Claims (20)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title | 
|---|---|---|---|
| US08/920,539 US6036780A (en) | 1997-08-27 | 1997-08-27 | Mechanism for detecting particulate formation and/or failures in the removal of gas from a liquid | 
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title | 
|---|---|---|---|
| US08/920,539 US6036780A (en) | 1997-08-27 | 1997-08-27 | Mechanism for detecting particulate formation and/or failures in the removal of gas from a liquid | 
Publications (1)
| Publication Number | Publication Date | 
|---|---|
| US6036780A true US6036780A (en) | 2000-03-14 | 
Family
ID=25443921
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date | 
|---|---|---|---|
| US08/920,539 Expired - Lifetime US6036780A (en) | 1997-08-27 | 1997-08-27 | Mechanism for detecting particulate formation and/or failures in the removal of gas from a liquid | 
Country Status (1)
| Country | Link | 
|---|---|
| US (1) | US6036780A (en) | 
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title | 
|---|---|---|---|---|
| US20040194627A1 (en) * | 2003-04-04 | 2004-10-07 | United Technologies Corporation | System and method for thermal management | 
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title | 
|---|---|---|---|---|
| US5091217A (en) * | 1989-05-22 | 1992-02-25 | Advanced Semiconductor Materials, Inc. | Method for processing wafers in a multi station common chamber reactor | 
| US5215588A (en) * | 1992-01-17 | 1993-06-01 | Amtech Systems, Inc. | Photo-CVD system | 
| US5401319A (en) * | 1992-08-27 | 1995-03-28 | Applied Materials, Inc. | Lid and door for a vacuum chamber and pretreatment therefor | 
| US5695808A (en) * | 1993-04-16 | 1997-12-09 | Crown Roll Leaf Inc. | Method for making transparent reflective films | 
- 
        1997
        
- 1997-08-27 US US08/920,539 patent/US6036780A/en not_active Expired - Lifetime
 
 
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title | 
|---|---|---|---|---|
| US5091217A (en) * | 1989-05-22 | 1992-02-25 | Advanced Semiconductor Materials, Inc. | Method for processing wafers in a multi station common chamber reactor | 
| US5215588A (en) * | 1992-01-17 | 1993-06-01 | Amtech Systems, Inc. | Photo-CVD system | 
| US5401319A (en) * | 1992-08-27 | 1995-03-28 | Applied Materials, Inc. | Lid and door for a vacuum chamber and pretreatment therefor | 
| US5565058A (en) * | 1992-08-27 | 1996-10-15 | Applied Materials, Inc. | Lid and door for a vacuum chamber and pretreatment therefor | 
| US5695808A (en) * | 1993-04-16 | 1997-12-09 | Crown Roll Leaf Inc. | Method for making transparent reflective films | 
Non-Patent Citations (6)
| Title | 
|---|
| Langford et al., "Maintaining WIndow Transparency in Photo-CVD: A Simultaneous Etch/Deposition Method," IEEE, 1987, pp. 573-576. | 
| Langford et al., Maintaining WIndow Transparency in Photo CVD: A Simultaneous Etch/Deposition Method, IEEE, 1987, pp. 573 576. * | 
| Ponnekanti et al., "Failure Mechanisms of Anodized Aluminum Parts Used in Chemical Vapor Deposition Chambers," J. Vac. Sci. Technol. A, vol. 14, No. 3, May/Jun. 1996, pp. 1127-1131. | 
| Ponnekanti et al., Failure Mechanisms of Anodized Aluminum Parts Used in Chemical Vapor Deposition Chambers, J. Vac. Sci. Technol. A, vol. 14, No. 3, May/Jun. 1996, pp. 1127 1131. * | 
| Van Maaren et al., "Excimer Laser Induced Depositio of Tungsten on SIlicon," Applied Surface Science, vol. 38, 1989, pp. 386-396. | 
| Van Maaren et al., Excimer Laser Induced Depositio of Tungsten on SIlicon, Applied Surface Science, vol. 38, 1989, pp. 386 396. * | 
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title | 
|---|---|---|---|---|
| US20040194627A1 (en) * | 2003-04-04 | 2004-10-07 | United Technologies Corporation | System and method for thermal management | 
| US6939392B2 (en) | 2003-04-04 | 2005-09-06 | United Technologies Corporation | System and method for thermal management | 
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| AS | Assignment | 
             Owner name: CYPRESS SEMICONDUCTOR CORPORATION, CALIFORNIA Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:HELM, JOHN THOMAS;MEDLIN, ARTHUR E., II;REEL/FRAME:008776/0687;SIGNING DATES FROM 19970817 TO 19970821  | 
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             Free format text: PATENTED CASE  | 
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| AS | Assignment | 
             Owner name: MORGAN STANLEY SENIOR FUNDING, INC., NEW YORK Free format text: SECURITY INTEREST;ASSIGNORS:CYPRESS SEMICONDUCTOR CORPORATION;SPANSION LLC;REEL/FRAME:035240/0429 Effective date: 20150312  | 
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| AS | Assignment | 
             Owner name: CYPRESS SEMICONDUCTOR CORPORATION, CALIFORNIA Free format text: PARTIAL RELEASE OF SECURITY INTEREST IN PATENTS;ASSIGNOR:MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT;REEL/FRAME:039708/0001 Effective date: 20160811 Owner name: SPANSION LLC, CALIFORNIA Free format text: PARTIAL RELEASE OF SECURITY INTEREST IN PATENTS;ASSIGNOR:MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT;REEL/FRAME:039708/0001 Effective date: 20160811  | 
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             Owner name: MONTEREY RESEARCH, LLC, CALIFORNIA Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:CYPRESS SEMICONDUCTOR CORPORATION;REEL/FRAME:040911/0238 Effective date: 20160811  | 
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| AS | Assignment | 
             Owner name: MORGAN STANLEY SENIOR FUNDING, INC., NEW YORK Free format text: CORRECTIVE ASSIGNMENT TO CORRECT THE 8647899 PREVIOUSLY RECORDED ON REEL 035240 FRAME 0429. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY INTERST;ASSIGNORS:CYPRESS SEMICONDUCTOR CORPORATION;SPANSION LLC;REEL/FRAME:058002/0470 Effective date: 20150312  |