US5793789A - Detector for photonic integrated transceivers - Google Patents

Detector for photonic integrated transceivers Download PDF

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US5793789A
US5793789A US08/700,245 US70024596A US5793789A US 5793789 A US5793789 A US 5793789A US 70024596 A US70024596 A US 70024596A US 5793789 A US5793789 A US 5793789A
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section
layer
detector
approximately
beam expander
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Rafael Ben-Michael
Uziel Koren
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Avago Technologies International Sales Pte Ltd
Nokia of America Corp
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Lucent Technologies Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3434—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer comprising at least both As and P as V-compounds

Definitions

  • the present invention relates to integrated light emitting devices, and, in particular, to photonic integrated transceivers used as fiber optical data links.
  • transmitters and receivers in such a system should operate in an uncooled mode of operation.
  • the transmitters could be Fabry-Perot cavity lasers with a relatively broad spectral range of ⁇ 10 nm around the desired 1.3 ⁇ m lasing wavelength.
  • Uncooled operation means that different transmitters (and receivers) in the system may be operating at different temperatures. Since the lasing wavelength of a transmitter is affected by temperature, different transmitters in the system may be transmitting at slightly different lasing wavelengths. In order for the system to operate efficiently, the receivers should have broad spectral responsivity around the lasing wavelength. Assuming worst case scenarios in temperature variations, and a temperature affect on lasing wavelength of approximately 6 ⁇ /° C., the receivers should have a responsivity of about ⁇ 35 nm around the lasing wavelength.
  • One proposed configuration is a ping-pong link, where transmitting and receiving occurs through a single fiber at different time slots with time division multiplexing (TDM).
  • TDM time division multiplexing
  • a proposed solution for a transceiver operating in such a system would be to use a bulk laser, which operate part of the time as a detector.
  • Optical module with a silica-based planar circuit for fiber-optic subscriber systems Phot. Tech. Lett., vol. 4, pp. 660-662 (1992)
  • S. L. Woodward et al. "A full duplex optical data link using lasers as transceivers," Phot. Tech. Lett., vol. 7, pp. 1060-1062, Sep. 19, 1995.
  • a laser as a transceiver provides certain advantages. First of all, relatively inexpensive uncooled lasers are commercially available. In addition, using a laser as a receiver eliminates the need for a separate receiver, located either on a separate fiber or after an optical splitter. By using a bulk laser, instead of a multiple quantum well (MQW) laser, polarization independent detection would be possible.
  • MQW multiple quantum well
  • An object of the present invention is to provide a configuration that has the advantages but not the disadvantages of the previously proposed configuration.
  • the present invention is an integrated light-emitting device, comprising a laser section and a detector section.
  • the laser section and the detector section comprise an active layer that is integrated along an in-line waveguide.
  • the detector section further comprises a bulk layer adjacent to the active layer, where the bulk layer has a band gap energy lower than the band gap energy of the active layer.
  • the laser section and the detector section of the integrated light-emitting device comprise a multiple quantum well (MQW) layer that is integrated along an in-line waveguide comprising two quaternary layers.
  • the detector section further comprises a bulk quaternary layer, where the bulk layer has a band gap energy lower than a band gap energy of the MQW layer.
  • FIG. 1 is a schematic structure of a photonic integrated transceiver, according to one embodiment of the present invention
  • FIG. 2 shows the electro-luminescence of the detector section of the transceiver of FIG. 1, when the laser section is zero biased, at two different pump currents;
  • FIG. 3 shows the responsivity of the transceiver of FIG. 1 for wavelengths ranging from 1.28 to 1.36 ⁇ m;
  • FIG. 4 shows the responsivity of the transceiver of FIG. 1 with an AR coating for wavelengths ranging from 1.28 to 1.36 ⁇ m;
  • FIG. 5 shows the output power coming out of the front facet of the transceiver of FIG. 1 vs. the drive current at different temperatures
  • FIGS. 6 and 7 show the alignment tolerance of the transceiver of FIG. 1 to a single mode fiber, when operated either as a receiver or as a transmitter.
  • the present invention is directed to an integrated light-emitting transceiver operating, for example, in the 1.3 ⁇ m wavelength range.
  • the transceiver has a sufficiently broad spectral responsivity range when operated in an uncooled configuration to allow it to be used in low-cost local-loop applications.
  • Transceiver 100 which operates in the 1.3 ⁇ m wavelength range, is a single in-line waveguide device with integration of a gain section (laser), a detector, and a beam expander. All three sections are integrated inside the Fabry-Perot cavity of the laser, along an underlying waveguide.
  • laser gain section
  • detector detector
  • beam expander beam expander
  • the detector has a 1.4 ⁇ m bulk quaternary layer to achieve a broad spectral responsivity range.
  • the gain and detector sections are optimized by making use of the high gain provided by a multiple quantum well layer together with the benefit of the polarization-independent response of the bulk layer in the detector section.
  • Transceiver 100 has insignificant degradation of performance when operating as a laser.
  • the purpose of the beam expander is to reduce the cost of packaging transceiver 100. With a beam expander, there is no need for a lensed fiber, because good coupling is achieved to a cleaved (flat) single mode fiber.
  • a beam expander there is no need for a lensed fiber, because good coupling is achieved to a cleaved (flat) single mode fiber.
  • transceiver 100 comprises three sections: laser 102, detector 104, and beam expander 106, integrated along underlying backbone waveguide 108.
  • the bottom waveguiding layer is ⁇ 800 ⁇ thick and the top waveguiding layer is ⁇ 1400 ⁇ thick.
  • the gain section of transceiver 100 is also referred to as the laser section.
  • Laser 102 has a multiple quantum well layer comprising six compressively strained ( ⁇ 0.9%) ⁇ 70 ⁇ thick quantum wells separated by ⁇ 150 ⁇ ⁇ 1.1 Q tensile strained barriers. It will be understood that alternative embodiments of the present invention may have different numbers of quantum well and/or different straining or even no straining.
  • the length of the laser section is ⁇ 500 ⁇ m.
  • Detector 104 is electrically separated from laser 102.
  • the detector section has the same underlying MQW layer as the laser section plus an ⁇ 800 ⁇ ⁇ 1.4 Q bulk layer.
  • the length of the detector section ( ⁇ 85 ⁇ m) is shorter than that of the laser section.
  • the detector ohmic contact stripe is ⁇ 10 ⁇ m wide, connected with a ( ⁇ 100 ⁇ m ⁇ ⁇ 100 ⁇ m) contact pad on top of a ⁇ 0.5 ⁇ m thick SiO 2 layer.
  • the resulting zero bias capacitance of the detector section is approximately 2 pF. This value can probably be reduced by using polyimide pads.
  • the top ⁇ 1.1 Q layer is adiabatically tapered laterally from ⁇ 3 ⁇ m at the beginning of the beam expander (i.e., the end adjacent to detector 104) to a sharp termination.
  • the bottom layer remains in the same ⁇ 5 ⁇ m width along the entire ⁇ 300 ⁇ m long beam expander.
  • the beam expander transforms the elliptical optical mode both laterally and vertically to fit better the shape of the optical mode in a single mode fiber.
  • Transceiver 100 may be grown in four epitaxial growth steps by metal organic chemical vapor phase epitaxy (MOVPE).
  • MOVPE metal organic chemical vapor phase epitaxy
  • First the waveguide layers, the MQW layer, and the bulk ( ⁇ p ⁇ 1.4 ⁇ m) InGaAsP layer are grown. Stripes ⁇ 85 ⁇ m wide are formed from the ⁇ 1.4 Q layer by selective etching.
  • the passive beam expander section is defined by removing the MQW layer from that section.
  • additional Zn-doped p InP is grown.
  • the p InP is removed from the passive beam expander section, and SiO 2 stripes are formed.
  • the tapered beam expander waveguide is formed. The following steps are the same as in a standard semi-insulating InP buried heterostructure process.
  • Transceiver 100 operates either as a transmitter or as a receiver.
  • the detector section When operated as a transmitter, the detector section may be absorbing, if no current is applied to that section.
  • the detector section When the detector section is driven with a low forward current, low emission appears in the lasing wavelength.
  • the drive current in that section is increased, the emission curve broadens, and significantly reduces the loss in the lasing wavelength, which is determined by the longer gain section (i.e., the laser section).
  • FIG. 2 shows the electro-luminescence of the detector section, when the laser section is zero biased, at two different pump currents. As shown in FIG.
  • the detector section can operate at zero bias, when transceiver 100 is used as a receiver.
  • FIGS. 3 and 4 show experimental results that were achieved with zero biasing the detector.
  • the responsivity of the detector was measured using four different Fabry-Perot lasers that were temperature tuned for different wavelength. The output of these lasers was coupled to a single mode fiber and a polarization controller, and the light coming out of the cleaved fiber was inserted into the transceiver. The response of the detector was measured while the transceiver was at room temperature. The front facets of the transceiver and the fiber were as cleaved (i.e., with no anti-reflecting coating).
  • the responsivity of transceiver 100 is shown for wavelengths ranging from 1.28 to 1.36 ⁇ m, for both transverse electrical (TE) and transverse magnetic (TM) polarized light.
  • the laser section could be either grounded or floating, with no effect on the receiver responsivity.
  • the responsivity at the lasing wavelength of transceiver 100 i.e., 1.327 ⁇ m
  • A/W amps/watt
  • the receiver has a flat response with less that -1 dB variation over the entire measured spectral range of 80 nm.
  • the polarization sensitivity is smaller than 0.5 dB.
  • the front facet of transceiver 100 (112 in FIG. 1) may be coated with an anti-reflecting (AR) coating.
  • FIG. 4 shows the responsivity of transceiver 100 with an AR coating, for both TE and TM polarized light. The highest responsivity is increased to ⁇ 0.43 A/W, with very low polarization sensitivity.
  • the extremely broad spectral responsivity range and the polarization independence achieved in both cases (i.e., FIGS. 3 and 4) may be attributed to the structure of the detector section, which includes a bulk ⁇ 1.4 Q layer. This spectral responsivity may meet the demand for broad spectral responsivity range in a low-cost network configuration, with a measured range of 33 nm above and 47 nm below the lasing wavelength.
  • a first transmitter operation scheme is to drive just the laser section, without any bias on the detector section. In this scheme, lasing occurs at a high threshold current of about 100 mA.
  • a second operation scheme is to connect the laser and the detector sections, and drive them simultaneously. This will yield a threshold current of approximately 65 mA.
  • a third operation scheme is to drive the detector section at a constant current that is higher than 30 mA, in which case, the room temperature threshold current of the laser section is ⁇ 18 mA.
  • Typical insertion loss to a single mode optical fiber is -3.9 dB (41%), and at room temperature, typically 8 dBm is coupled to a single mode fiber, with drive current of ⁇ 100 mA in the laser section and drive current of ⁇ 50 mA in the detector section.
  • FIGS. 6 and 7 show the alignment tolerance of transceiver 100 to a single mode fiber, when operated either as a receiver or as a transmitter.
  • FIG. 6 shows the power coupled to a cleaved single mode fiber vs. lateral and vertical misalignments, with the conditions stated above, giving 8 dBm inside the fiber with optimal alignment. The fiber was translated laterally and vertically and the power in the fiber was measured at each step.
  • FIG. 7 shows the responsivity of the detector with optimal alignment and with lateral and vertical displacements.
  • the 1-dB excess loss due to misaligning the fiber both when transceiver 100 is operating as a receiver or a transmitter is ⁇ 2.2 ⁇ m vertically and ⁇ 3.2 ⁇ m laterally.
  • transceiver 100 is a potentially low-cost photonic integrated light-emitting that can operate as a transceiver in a ping-pong optical data link configuration.
  • Transceiver 100 is designed for uncooled operation, with integration of a laser, a detector, and a beam expander inside a Fabry-Perot cavity, along a single in-line waveguide.
  • the detector has a broad spectral responsivity range of 80 nm, extending to 33 nm above the lasing wavelength of the device. This may allow for sufficient response even in the most severe temperature scenario that might occur in a network.
  • the transmitter can couple 8 dBm of optical power into a single mode fiber, using a beam expander which provides the benefits of relaxed alignment tolerance, and the use of a cleaved rather than a lensed single mode fiber.
  • a bulk layer to the detector section provides the present invention with certain advantages over other laser-based transceivers. Because the band gap energy of the bulk layer is designed to be less than the band gap energy of the active (MQW) layer, devices of the present invention are able to absorb light with wavelengths longer than the lasing wavelength of the active layer. Thus, the bulk layer increases the range of absorption of the detector section, thereby enabling the device to operate efficiently as a receiver at a relatively wide range of temperatures. This makes the devices of the present invention suitable for use as transceivers in uncooled modes of operation.
  • MQW band gap energy of the active
  • the devices of the present invention provide the advantages of both MQW layers and bulk layers.
  • MQW layers operate well as transmitters, but less well as receivers because their response is typically dependent on the polarization of the incoming light.
  • Bulk layers are relatively insensitive to polarization and therefore work well as receivers.
  • devices of the present invention take advantage of the good transmitting capabilities of MQW layers as well as the good receiving capabilities of bulk layers.
  • transceiver 100 of FIG. 1 is just one embodiment of the present invention and that many other embodiments are also possible. It will be understood that these other embodiments may differ from transceiver 100 in one or more of its particular characteristics.
  • Essential characteristics of the present invention are that the transceiver has a laser section and a detector section, both of which have an active layer that is integrated along an in-line waveguide. (Those skilled in the art will understand that an active layer is a lasing layer that has a band gap energy corresponding to its lasing wavelength.)
  • the detector section also has a bulk layer adjacent to the active layer, where the bulk layer has a band gap energy that is lower than the band gap energy of the active layer. Almost every other characteristic of transceiver 100 is subject to change based on implementation requirements and/or design choices.
  • the term "adjacent" can have different meanings.
  • the bulk layer of the detector section being adjacent to the active layer could mean that the bulk layer is on top of the MQW layer which is itself on top of the two waveguide layers, as in transceiver 100 of FIG. 1.
  • the bulk layer could be between the MQW layer and the waveguide layers, or even between the waveguide layers, and the MQW layer could be under or even between the waveguide layers.
  • the waveguide may be implemented with other than two quaternary layers.
  • Transceiver 100 was designed to operate with a lasing wavelength of 1.3 ⁇ m and many of the band gaps, material compositions, and dimensions were selected to achieve that lasing wavelength. It will be understood that other transceivers of the present invention may be designed with different characteristics to operate at different lasing wavelengths.
  • the waveguide layers and the bulk layer are made of InGaAsP, a particular quaternary material.
  • other materials such as other quaternary materials, ternary materials, or any other suitable material, may be used. The same is true for the composition of other layers of devices of the present invention.
  • the active lasing layer is a multiple quantum well layer consisting of six quantum wells separated by barriers.
  • the active layer may have different compositions, including different numbers of quantum wells.
  • the active layer need not even be an MQW layer. Any other active lasing layer may be suitable, including bulk lasers.

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US6332049B1 (en) 2000-01-22 2001-12-18 Global Fia, Inc. Luminescence detector with liquid-core waveguide
US6609842B1 (en) 2000-03-27 2003-08-26 Marconi Communications, Inc. Linear laser driver circuit
US6620642B2 (en) 2001-06-29 2003-09-16 Xanoptix, Inc. Opto-electronic device integration
US6633421B2 (en) 2001-06-29 2003-10-14 Xanoptrix, Inc. Integrated arrays of modulators and lasers on electronics
US6707833B1 (en) 2000-03-31 2004-03-16 Marconi Communications, Inc. Digital laser driver circuit
US6724794B2 (en) 2001-06-29 2004-04-20 Xanoptix, Inc. Opto-electronic device integration
US6731665B2 (en) 2001-06-29 2004-05-04 Xanoptix Inc. Laser arrays for high power fiber amplifier pumps
US6753197B2 (en) 2001-06-29 2004-06-22 Xanoptix, Inc. Opto-electronic device integration
US6753199B2 (en) 2001-06-29 2004-06-22 Xanoptix, Inc. Topside active optical device apparatus and method
US6775308B2 (en) 2001-06-29 2004-08-10 Xanoptix, Inc. Multi-wavelength semiconductor laser arrays and applications thereof
US6790691B2 (en) 2001-06-29 2004-09-14 Xanoptix, Inc. Opto-electronic device integration
US20060093369A1 (en) * 2004-10-28 2006-05-04 Infinera Corporation Photonic integrated circuit (PIC) transceivers for an optical line terminal (OLT) and an optical network unit (ONU) in passive optical networks (PONs)
US20090323869A1 (en) * 2000-10-27 2009-12-31 Greenwich Technologies Associates Method and apparatus for space division multiple access receiver
US7831151B2 (en) 2001-06-29 2010-11-09 John Trezza Redundant optical device array
US8767842B2 (en) 2000-05-05 2014-07-01 Greenwich Technologies Associates Method and apparatus for broadcasting with spatially diverse signals
CN114545550A (zh) * 2018-02-13 2022-05-27 苹果公司 具有集成边缘外耦合器的集成光子装置
US20230085835A1 (en) * 2021-09-21 2023-03-23 Raytheon Company Dual-polarization rotationally-insensitive monostatic transceiver with dual cladding fiber

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US6724794B2 (en) 2001-06-29 2004-04-20 Xanoptix, Inc. Opto-electronic device integration
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US20040200573A1 (en) * 2001-06-29 2004-10-14 Greg Dudoff Opto-electronic device integration
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US7092424B2 (en) 2001-06-29 2006-08-15 Cubic Wafer, Inc. Integrated arrays of modulators and lasers on electronics
US6753197B2 (en) 2001-06-29 2004-06-22 Xanoptix, Inc. Opto-electronic device integration
US7831151B2 (en) 2001-06-29 2010-11-09 John Trezza Redundant optical device array
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US7877016B2 (en) * 2004-10-28 2011-01-25 Infinera Corporation Photonic integrated circuit (PIC) transceivers for an optical line terminal (OLT) and an optical network unit (ONU) in passive optical networks (PONs)
US20060093369A1 (en) * 2004-10-28 2006-05-04 Infinera Corporation Photonic integrated circuit (PIC) transceivers for an optical line terminal (OLT) and an optical network unit (ONU) in passive optical networks (PONs)
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