US4367114A - High speed plasma etching system - Google Patents

High speed plasma etching system Download PDF

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Publication number
US4367114A
US4367114A US06/260,668 US26066881A US4367114A US 4367114 A US4367114 A US 4367114A US 26066881 A US26066881 A US 26066881A US 4367114 A US4367114 A US 4367114A
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US
United States
Prior art keywords
electrode plate
wafer
chamber
plasma etching
etching system
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US06/260,668
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English (en)
Inventor
George N. Steinberg
Alan R. Reinberg
Jean Dalle Ave
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Applied Biosystems Inc
Original Assignee
Perkin Elmer Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Perkin Elmer Corp filed Critical Perkin Elmer Corp
Priority to US06/260,668 priority Critical patent/US4367114A/en
Assigned to PERKIN-ELMER CORPORATION, A CORP. OF NY reassignment PERKIN-ELMER CORPORATION, A CORP. OF NY ASSIGNMENT OF ASSIGNORS INTEREST. Assignors: AVE, JEAN D., REINBERG ALAN R., STEINBERG GEORGE N.
Priority to EP82102911A priority patent/EP0064163B1/en
Priority to DE8282102911T priority patent/DE3272087D1/de
Priority to JP57069688A priority patent/JPS57185982A/ja
Application granted granted Critical
Publication of US4367114A publication Critical patent/US4367114A/en
Assigned to LAM RESEARCH CORPORATION reassignment LAM RESEARCH CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST. Assignors: ELMER, PERKIN
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32633—Baffles

Definitions

  • This invention relates to a high speed plasma etching system, which is particularly adapted, among other possible uses, for semiconductor manufacture.
  • the invention has as one of its objectives, the provision of a new and improved high speed etching system, which is adapted to employ a substantially totally insulated substrate table and other grounded surfaces, to thereby prevent short-circuit discharge current from passing around the edges of the wafer and greatly reducing the etching rate.
  • the invention provides as another of its objectives, a system of the character aforesaid, which employs a sintered or sintered-like porous electrode plate to provide uniform omnidirectional gas dispersal without local strong discharge regions.
  • the invention provides a high speed plasma etching system, which can accommodate silicon wafers that are not perfectly flat, as a result of the provision of clamping means to assure proper coupling between the wafer and the wafer support plate.
  • One further objective of the invention resides in the provision of a new and improved etching system, which utilizes low frequency excitation current, resulting in increased ion motion and other beneficial effects.
  • the high ion energies resulting from these effects are important for increasing etch rates, anisotropy and selectivity for silicon oxide etching with a variety of fluorocarbon etch gases.
  • our invention contemplates the provision of a new and improved high speed plasma etching system characterized by a lower flange and a spaced upper flange.
  • a chamber wall is mounted between the flanges to form a closed etching chamber, and a wafer support plate is disposed in said chamber for receiving thereon a wafer to be processed. Means are provided for electrically grounding this plate.
  • electrical insulating spacer means are interposed between the chamber wall and the support plate.
  • the system further includes a sintered or sintered-like porous electrode plate, and means are provided for mounting the electrode plate in the chamber in space relationship with respect to the wafer.
  • the plate has gas inlet means for receiving a supply of etching gas, and means are provided for applying an excitation operating voltage to said electrode plate.
  • the chamber has a gas outlet leading to a vacuum source for discharging the gas and etching products.
  • the electrode plate is fabricated of sintered fine particles for omnidirectional effusion of the gas therefrom, such a plate being fabricated from any suitable material such as, for example, stainless steel, porous graphite, or porous sintered quartz.
  • the system includes means for clamping the wafer firmly to the wafer support plate to enhance the electrical coupling of the wafer to ground.
  • the frequency of the excitation voltage applied to the electrode plate is made sufficiently low so that the mechanism responsible for producing electron multiplication necessary for maintaining the discharge is surface controlled, rather than volume controlled.
  • FIGURE is a side elevational view, partially in schematic and partially in section, showing a high speed etching system constructed in accordance with the concepts of the present invention.
  • the plasma etching system comprises a lower flange 10 and a spaced upper flange 12.
  • a chamber wall 14 is mounted between said flanges to form a closed etching chamber 16.
  • the upper edge of the chamber wall 14 is fixedly attached to the upper flange 12, as at 18, and an O-ring 20 serves to seal the lower edge of the chamber wall with respect to the lower flange 10.
  • a wafer support plate 22 is disposed in the etching chamber 16. This plate is mounted on the lower flange 10, and a ring-shaped electrical insulating spacer 24 is interposed between the chamber wall 14 and the support plate 22.
  • the wafer support 22 is adapted to receive a wafer, indicated at 26 in the figure, to be processed.
  • the support plate 22 is fabricated from an electrically conductive material and means, such as conductor 28, are provided for grounding the wafer, for purposes which will be explained more fully hereinafter.
  • a sintered or sintered-like porous electrode plate 30 is mounted in the etching chamber 16 in spaced relationship with respect to the wafer. This plate is surrounded by an electrically insulated support ring 32, which serves to insulate it with respect to the chamber wall 14.
  • a power supply source 36 supplies an excitation operating voltage to the electrode plate 30 via conductor 38.
  • the etching gas is supplied to the sintered or sintered-like porous plate 30 via gas inlet 40, provided for the purpose.
  • the chamber 16 has a gas outlet 42 in the form of a plurality of spaced passages disposed around the wafer support plate 22, leading to a vacuum source, for discharging gas and etching products.
  • Resilient wafer hold down means 44 are provided, which may be in the form of spring loaded pins or a resiliently mounted ring, for purposes to be explained hereinafter.
  • the upper flange 12, lower flange 10, and wafer support plate 22 are each provided with cooling or heating passages.
  • the upper flange 12 has a cooling inlet 46 and a cooling outlet 48
  • the bottom flange 10 has a cooling inlet 50 and outlet 52
  • the wafer support plate 22 has a cooling inlet 54 and outlet 56.
  • the upper portion of the apparatus is moved vertically upwardly, as indicated by arrow 58 in the drawing.
  • the upper flange 12, chamber wall 14, support ring 32, electrode plate 30 and hold down members 44 are arranged for upward movement as a single unit, while the lower flange 10, spacer 24, support plate 22 remain stationary, thereby to provide access to the wafer station.
  • the wafer support plate is totally electrically insulated. Silicon wafers are usually oxidized and therefore present a higher impedence to the plasma discharge than an uninsulated metal surface. The wafers are placed on a grounded surface. If exposed grounded metal surfaces are in contact with the plasma, a short-circuit discharge current will occur around the wafer and greatly reduce the etching rate. To prevent this, the ring-shaped insulating spacer 24 is provided to prevent exposure of the metal support plate 22, thereby assuring that substantially all of the discharge current passes to the wafer 26. Suitable insulating material for example, is Teflon (trademark) for fabricating the spacer 24, chamber walls 14 and support ring 32. Also, the clamping members 44 are fabricated of insulating material, such as Teflon (trademark), for example.
  • the electrode 30 is a sintered or sintered-like porous plate. Electrode spacing for high rate etching is preferably made as small as possible to produce a high plasma space potential. In order to distribute the input gases as uniformly as possible, some type of shower head type of construction was heretofore considered desirable. However, we have found that if a series of drilled holes are used, even if they are small, local strong discharge regions are formed, which adversely affect uniformity. We have found that omnidirectional porous material is very desirable as a gas diffusion means. Suitable electrode plates can be fabricated of sintered fine particles to give uniform gas dispersal without local strong discharge regions. Suitable materials include sintered stainless steel, porous graphite and sintered quartz.
  • the electrode plate serves many functions as well as gas distribution, such as for example, the ability to vary the amount of gas delivered to a specific region of the wafer by varying the thickness of the plate.
  • gas distribution such as for example, the ability to vary the amount of gas delivered to a specific region of the wafer by varying the thickness of the plate.
  • the long contact time of the gas with the electrode allows it to be cooled by the electrode, whereby cool gas is delivered to the surface of the photoresist on the wafer. Since thermal degradation of photoresist is a prime limiting factor in plasma etching, this provides a more efficient method of cooling then by only conduction through the wafer from a cooled support plate.
  • Still another feature of the invention resides in the provision of wafer clamping means.
  • Most silicon wafers are not perfectly flat and thus, contact the support plate in few places, at best. This results in a gap between the back of the wafer and the support plate. This gap results in reduced capacitance between the wafer and the support plate, whereby the wafer is partially “decoupled” from the ground. Further, clamping also prevents discharge current from short circuiting to the metal support plate under the wafer.
  • a further important feature of the invention resides in the use of low frequency excitation.
  • the operating voltage necessary to maintain a discharge increases above that which is necessary at higher radio-frequency such as 13.56 MHz. commonly used in prior art sputtering apparatus and in some prior art plasma etching apparatus. Consequently, ion motion increases at low frequency as the ions are able to follow changes in the field direction.
  • the mechanism responsible for producing the electron multiplication necessary for maintaining the discharge shifts from a volume controlled mechanism to one which is surface controlled.
  • the electrode or cathode plate 30 was constructed from sintered stainless steel with 0.5 micron pore size. Gaseous C 2 F 6 mixed with argon was introduced into the chamber 16 through the porous electrode and a plasma initiated in the region between the bottom of the electrode and the top of an oxidized silicon wafer 26. Pressure in the chamber was 1.0 torr and excitation energy at 0.1 MHz. and 300 watts was employed. Very desirable results were obtained.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
US06/260,668 1981-05-06 1981-05-06 High speed plasma etching system Expired - Lifetime US4367114A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US06/260,668 US4367114A (en) 1981-05-06 1981-05-06 High speed plasma etching system
EP82102911A EP0064163B1 (en) 1981-05-06 1982-04-05 High speed plasma etching system
DE8282102911T DE3272087D1 (en) 1981-05-06 1982-04-05 High speed plasma etching system
JP57069688A JPS57185982A (en) 1981-05-06 1982-04-27 Plasma etching device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/260,668 US4367114A (en) 1981-05-06 1981-05-06 High speed plasma etching system

Publications (1)

Publication Number Publication Date
US4367114A true US4367114A (en) 1983-01-04

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Family Applications (1)

Application Number Title Priority Date Filing Date
US06/260,668 Expired - Lifetime US4367114A (en) 1981-05-06 1981-05-06 High speed plasma etching system

Country Status (4)

Country Link
US (1) US4367114A (enrdf_load_stackoverflow)
EP (1) EP0064163B1 (enrdf_load_stackoverflow)
JP (1) JPS57185982A (enrdf_load_stackoverflow)
DE (1) DE3272087D1 (enrdf_load_stackoverflow)

Cited By (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4431473A (en) * 1981-07-17 1984-02-14 Tokyo Shibaura Denki Kabushiki Kaisha RIE Apparatus utilizing a shielded magnetron to enhance etching
US4439261A (en) * 1983-08-26 1984-03-27 International Business Machines Corporation Composite pallet
US4473455A (en) * 1981-12-21 1984-09-25 At&T Bell Laboratories Wafer holding apparatus and method
US4534816A (en) * 1984-06-22 1985-08-13 International Business Machines Corporation Single wafer plasma etch reactor
US4585920A (en) * 1982-05-21 1986-04-29 Tegal Corporation Plasma reactor removable insert
FR2578682A1 (fr) * 1985-03-11 1986-09-12 Balzers Hochvakuum Procede et appareil d'attaque au plasma
JPS62252942A (ja) * 1986-04-17 1987-11-04 Tokai Carbon Co Ltd プラズマエツチング用電極板
EP0197668A3 (en) * 1985-03-15 1987-11-19 Denton Vacuum Inc External plasma gun
US4718976A (en) * 1982-03-31 1988-01-12 Fujitsu Limited Process and apparatus for plasma treatment
US4793975A (en) * 1985-05-20 1988-12-27 Tegal Corporation Plasma Reactor with removable insert
US4904621A (en) * 1987-07-16 1990-02-27 Texas Instruments Incorporated Remote plasma generation process using a two-stage showerhead
US4906811A (en) * 1986-07-11 1990-03-06 Hauzer Holding B.V. Process and device for igniting an arc with a conducting plasma channel
US4911812A (en) * 1987-10-21 1990-03-27 Hitachi, Ltd. Plasma treating method and apparatus therefor
US4963713A (en) * 1988-01-20 1990-10-16 Tokyo Electron Limited Cooling of a plasma electrode system for an etching apparatus
US4971676A (en) * 1988-06-28 1990-11-20 Centre National d'Etudes des Telecomunications Support device for a thin substrate of a semiconductor material
EP0467046A3 (en) * 1990-07-17 1992-04-29 Balzers Aktiengesellschaft Device for etching or crating
US5262029A (en) * 1988-05-23 1993-11-16 Lam Research Method and system for clamping semiconductor wafers
US5391252A (en) * 1992-12-08 1995-02-21 Hughes Aircraft Company Plasma pressure control assembly
US5413673A (en) * 1985-09-24 1995-05-09 Anelva Corporation Plasma processing apparatus
WO1995016800A1 (en) * 1993-12-17 1995-06-22 Brooks Automation, Inc. Apparatus for heating or cooling wafers
US5588827A (en) * 1993-12-17 1996-12-31 Brooks Automation Inc. Passive gas substrate thermal conditioning apparatus and method
US5595602A (en) * 1995-08-14 1997-01-21 Motorola, Inc. Diffuser for uniform gas distribution in semiconductor processing and method for using the same
US5609691A (en) * 1994-11-29 1997-03-11 Nec Corporation Plasma CVD apparatus for forming a thin film of uniform thickness
US5705029A (en) * 1986-09-05 1998-01-06 Hitachi, Ltd. Dry etching method
US5891350A (en) * 1994-12-15 1999-04-06 Applied Materials, Inc. Adjusting DC bias voltage in plasma chambers
US5976309A (en) * 1996-12-17 1999-11-02 Lsi Logic Corporation Electrode assembly for plasma reactor
US5997686A (en) * 1992-07-27 1999-12-07 Tokyo Electron Limited Process for setting a working rate distribution in an etching or plasma CVD apparatus
US6067930A (en) * 1991-11-22 2000-05-30 Tokyo Ohka Kogyo Co., Ltd. Coaxial plasma processing apparatus
US6079355A (en) * 1997-02-11 2000-06-27 United Microelectronics Corp. Alignment aid for an electrode plate assembly
US20020195202A1 (en) * 2001-06-25 2002-12-26 Matsushita Electric Industrial Co., Ltd Electrode member for plasma treating apparatus, plasma treating apparatus and plasma treating method
US20030024646A1 (en) * 1995-03-16 2003-02-06 Toshio Masuda Plasma etching apparatus and plasma etching method
US20030183252A1 (en) * 2001-03-26 2003-10-02 Timperio Onofio L. Plasma etcher with heated ash chamber base
US20030227258A1 (en) * 2000-08-10 2003-12-11 Strang Eric J. Method and apparatus for tuning a plasma reactor chamber
US20040040940A1 (en) * 2002-08-28 2004-03-04 Tokyo Electron Limited Asymmetrical focus ring
US6723214B2 (en) 1998-10-29 2004-04-20 Applied Materials, Inc. Apparatus for improved power coupling through a workpiece in a semiconductor wafer processing system
US6863835B1 (en) 2000-04-25 2005-03-08 James D. Carducci Magnetic barrier for plasma in chamber exhaust
US20060011299A1 (en) * 2004-07-13 2006-01-19 Condrashoff Robert S Ultra high speed uniform plasma processing system
US20060090997A1 (en) * 2003-06-11 2006-05-04 Mitsubishi Denki Kabushiki Kaisha Discharge surface-treatment method and discharge surface-treatment apparatus
US20060118045A1 (en) * 2004-12-08 2006-06-08 Fink Steven T Method and apparatus for improved baffle plate
US20060151114A1 (en) * 2005-01-11 2006-07-13 Fink Steven T Plasma processing system and baffle assembly for use in plasma processing system
US20060225654A1 (en) * 2005-03-29 2006-10-12 Fink Steven T Disposable plasma reactor materials and methods
US20070052355A1 (en) * 2004-06-21 2007-03-08 Markus Zimmermann Gas-Permeable plasma electrode, method for production of the gas-permeable plasma electrode, and a parallel-plate reactor
USRE41266E1 (en) 1990-09-18 2010-04-27 Lam Research Corporation Composite electrode for plasma processes
EP2654071A1 (fr) 2012-04-16 2013-10-23 INDEOtec SA Réacteur plasma de type capacitif pour le dépôt de films minces
CN104969848A (zh) * 2015-06-18 2015-10-14 爱盛生物科技（上海）有限公司 一种复合式无土栽培灌溉系统

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JPS607132A (ja) * 1983-06-25 1985-01-14 Toshiba Corp ドライエツチング装置
JPS6039832A (ja) * 1983-08-12 1985-03-01 Fujitsu Ltd プラズマ処理装置
US4496423A (en) * 1983-11-14 1985-01-29 Gca Corporation Gas feed for reactive ion etch system
JPS60201632A (ja) * 1984-03-27 1985-10-12 Anelva Corp ドライエツチング装置
JPS61278144A (ja) * 1985-06-01 1986-12-09 Anelva Corp プラズマ処理装置
JPH07114198B2 (ja) * 1989-10-02 1995-12-06 東海カーボン株式会社 プラズマエッチング用電極板
JP3744726B2 (ja) 1999-06-08 2006-02-15 信越化学工業株式会社 シリコン電極板

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US4253907A (en) * 1979-03-28 1981-03-03 Western Electric Company, Inc. Anisotropic plasma etching
US4209357A (en) * 1979-05-18 1980-06-24 Tegal Corporation Plasma reactor apparatus
US4307283A (en) * 1979-09-27 1981-12-22 Eaton Corporation Plasma etching apparatus II-conical-shaped projection
US4270999A (en) * 1979-09-28 1981-06-02 International Business Machines Corporation Method and apparatus for gas feed control in a dry etching process

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Cited By (66)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4431473A (en) * 1981-07-17 1984-02-14 Tokyo Shibaura Denki Kabushiki Kaisha RIE Apparatus utilizing a shielded magnetron to enhance etching
US4473455A (en) * 1981-12-21 1984-09-25 At&T Bell Laboratories Wafer holding apparatus and method
US4718976A (en) * 1982-03-31 1988-01-12 Fujitsu Limited Process and apparatus for plasma treatment
US4585920A (en) * 1982-05-21 1986-04-29 Tegal Corporation Plasma reactor removable insert
US4439261A (en) * 1983-08-26 1984-03-27 International Business Machines Corporation Composite pallet
US4534816A (en) * 1984-06-22 1985-08-13 International Business Machines Corporation Single wafer plasma etch reactor
EP0165400A1 (en) 1984-06-22 1985-12-27 International Business Machines Corporation Apparatus for plasma etching
FR2578682A1 (fr) * 1985-03-11 1986-09-12 Balzers Hochvakuum Procede et appareil d'attaque au plasma
EP0197668A3 (en) * 1985-03-15 1987-11-19 Denton Vacuum Inc External plasma gun
US4793975A (en) * 1985-05-20 1988-12-27 Tegal Corporation Plasma Reactor with removable insert
US5413673A (en) * 1985-09-24 1995-05-09 Anelva Corporation Plasma processing apparatus
JPS62252942A (ja) * 1986-04-17 1987-11-04 Tokai Carbon Co Ltd プラズマエツチング用電極板
US4906811A (en) * 1986-07-11 1990-03-06 Hauzer Holding B.V. Process and device for igniting an arc with a conducting plasma channel
US5705029A (en) * 1986-09-05 1998-01-06 Hitachi, Ltd. Dry etching method
US4904621A (en) * 1987-07-16 1990-02-27 Texas Instruments Incorporated Remote plasma generation process using a two-stage showerhead
US4911812A (en) * 1987-10-21 1990-03-27 Hitachi, Ltd. Plasma treating method and apparatus therefor
US4963713A (en) * 1988-01-20 1990-10-16 Tokyo Electron Limited Cooling of a plasma electrode system for an etching apparatus
US5155331A (en) * 1988-01-20 1992-10-13 Tokyo Electron Limited Method for cooling a plasma electrode system for an etching apparatus
US5262029A (en) * 1988-05-23 1993-11-16 Lam Research Method and system for clamping semiconductor wafers
US4971676A (en) * 1988-06-28 1990-11-20 Centre National d'Etudes des Telecomunications Support device for a thin substrate of a semiconductor material
EP0467046A3 (en) * 1990-07-17 1992-04-29 Balzers Aktiengesellschaft Device for etching or crating
US5460707A (en) * 1990-07-17 1995-10-24 Balzers Aktiengesellschaft Etching or coating method and a plant therefor
USRE41266E1 (en) 1990-09-18 2010-04-27 Lam Research Corporation Composite electrode for plasma processes
US6067930A (en) * 1991-11-22 2000-05-30 Tokyo Ohka Kogyo Co., Ltd. Coaxial plasma processing apparatus
US5997686A (en) * 1992-07-27 1999-12-07 Tokyo Electron Limited Process for setting a working rate distribution in an etching or plasma CVD apparatus
US5391252A (en) * 1992-12-08 1995-02-21 Hughes Aircraft Company Plasma pressure control assembly
WO1995016800A1 (en) * 1993-12-17 1995-06-22 Brooks Automation, Inc. Apparatus for heating or cooling wafers
US5588827A (en) * 1993-12-17 1996-12-31 Brooks Automation Inc. Passive gas substrate thermal conditioning apparatus and method
US5778968A (en) * 1993-12-17 1998-07-14 Brooks Automation Inc. Method for heating or cooling wafers
US5609691A (en) * 1994-11-29 1997-03-11 Nec Corporation Plasma CVD apparatus for forming a thin film of uniform thickness
US6221782B1 (en) 1994-12-15 2001-04-24 Applied Materials, Inc. Adjusting DC bias voltage in plasma chamber
US6513452B2 (en) 1994-12-15 2003-02-04 Applied Materials Inc. Adjusting DC bias voltage in plasma chamber
US5891350A (en) * 1994-12-15 1999-04-06 Applied Materials, Inc. Adjusting DC bias voltage in plasma chambers
US20030024646A1 (en) * 1995-03-16 2003-02-06 Toshio Masuda Plasma etching apparatus and plasma etching method
US5595602A (en) * 1995-08-14 1997-01-21 Motorola, Inc. Diffuser for uniform gas distribution in semiconductor processing and method for using the same
US5976309A (en) * 1996-12-17 1999-11-02 Lsi Logic Corporation Electrode assembly for plasma reactor
US6079355A (en) * 1997-02-11 2000-06-27 United Microelectronics Corp. Alignment aid for an electrode plate assembly
US6723214B2 (en) 1998-10-29 2004-04-20 Applied Materials, Inc. Apparatus for improved power coupling through a workpiece in a semiconductor wafer processing system
US7163607B2 (en) 1998-10-29 2007-01-16 Applied Materials, Inc. Process kit for improved power coupling through a workpiece in a semiconductor wafer processing system
US20040173156A1 (en) * 1998-10-29 2004-09-09 Stimson Bradley O. Process kit for improved power coupling through a workpiece in a semiconductor wafer processing system
US6863835B1 (en) 2000-04-25 2005-03-08 James D. Carducci Magnetic barrier for plasma in chamber exhaust
US20030227258A1 (en) * 2000-08-10 2003-12-11 Strang Eric J. Method and apparatus for tuning a plasma reactor chamber
US6960887B2 (en) 2000-08-10 2005-11-01 Tokyo Electron Limited Method and apparatus for tuning a plasma reactor chamber
US20030183252A1 (en) * 2001-03-26 2003-10-02 Timperio Onofio L. Plasma etcher with heated ash chamber base
WO2003001557A1 (en) * 2001-06-25 2003-01-03 Matsushita Electric Industrial Co., Ltd. Electrode member for plasma treating apparatus, plasma treating apparatus and plasma treating method
US7138034B2 (en) * 2001-06-25 2006-11-21 Matsushita Electric Industrial Co., Ltd. Electrode member used in a plasma treating apparatus
KR100845178B1 (ko) * 2001-06-25 2008-07-10 마쯔시다덴기산교 가부시키가이샤 플라즈마 처리 장치용 전극부재, 플라즈마 처리 장치 및플라즈마 처리 방법
CN1302512C (zh) * 2001-06-25 2007-02-28 松下电器产业株式会社 等离子体处理装置和处理方法及其电极元件
US20020195202A1 (en) * 2001-06-25 2002-12-26 Matsushita Electric Industrial Co., Ltd Electrode member for plasma treating apparatus, plasma treating apparatus and plasma treating method
US20040040940A1 (en) * 2002-08-28 2004-03-04 Tokyo Electron Limited Asymmetrical focus ring
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EP0064163B1 (en) 1986-07-23
JPS57185982A (en) 1982-11-16
EP0064163A3 (en) 1983-07-27
EP0064163A2 (en) 1982-11-10
JPH0144791B2 (enrdf_load_stackoverflow) 1989-09-29
DE3272087D1 (en) 1986-08-28

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