US4024489A - Magnetoresistive sandwich including sensor electrically parallel with electrical shunt and magnetic biasing layers - Google Patents

Magnetoresistive sandwich including sensor electrically parallel with electrical shunt and magnetic biasing layers Download PDF

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Publication number
US4024489A
US4024489A US05/633,047 US63304775A US4024489A US 4024489 A US4024489 A US 4024489A US 63304775 A US63304775 A US 63304775A US 4024489 A US4024489 A US 4024489A
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Prior art keywords
layer
sensor
biasing
accordance
magnetoresistive
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Expired - Lifetime
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US05/633,047
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English (en)
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Christopher Henry Bajorek
Robert Douglas Hempstead
Sol Krongelb
Ashok Frank Mayadas
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International Business Machines Corp
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International Business Machines Corp
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Priority to US05/633,047 priority Critical patent/US4024489A/en
Priority to IT2758376A priority patent/IT1075854B/it
Priority to GB4155076A priority patent/GB1534735A/en
Priority to FR7631436A priority patent/FR2332587A1/fr
Priority to JP13134776A priority patent/JPS5262417A/ja
Priority to DE2650484A priority patent/DE2650484C2/de
Priority to NL7612457A priority patent/NL7612457A/xx
Priority to CA265,857A priority patent/CA1068412A/en
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Publication of US4024489A publication Critical patent/US4024489A/en
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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/90—Magnetic feature
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12806—Refractory [Group IVB, VB, or VIB] metal-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12806—Refractory [Group IVB, VB, or VIB] metal-base component
    • Y10T428/12826—Group VIB metal-base component
    • Y10T428/12847—Cr-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12806—Refractory [Group IVB, VB, or VIB] metal-base component
    • Y10T428/12826—Group VIB metal-base component
    • Y10T428/12847—Cr-base component
    • Y10T428/12854—Next to Co-, Fe-, or Ni-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24926—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including ceramic, glass, porcelain or quartz layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
    • Y10T428/2495—Thickness [relative or absolute]
    • Y10T428/24967—Absolute thicknesses specified
    • Y10T428/24975—No layer or component greater than 5 mils thick
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31511—Of epoxy ether

Definitions

  • This invention relates to dynamic magnetic information storage and retrieval and, ore particularly, to heads which are magnetoresistive, and to sensors of magnetic fields in general.
  • Beaulieu et al provides a structure which makes it very difficult to provide contact with the lower magnetoresistive sensor because the conductor requires a discontinuity in the structure, causing Barkhausen noise and potential short circuits.
  • the magnetoresistive (MR) film is deposited on a smooth substrate.
  • the sequence of deposition is important for smoothness of the surface on which the MR film is deposited, since smoothness determines the quality of the MR film.
  • a smooth substrate provides a higher quality film with reduced dispersion and lower coercivity. Both are desirable for reduction of Barkhausen noise.
  • An intermediate layer of a thin film of a high resistivity, conductive material, such as titanium, is deposited directly upon the film of magnetoresistive material. The titanium is deposited under low temperature conditions which yield a smooth surface.
  • a thin film of magnetic biasing material is deposited directly upon the intermediate layer.
  • An object of this invention is to provide a magnetoresistive sensor having a bias layer without spurious electrical breakdowns and with excellent magnetic and electrical characteristics.
  • FIG. 1A shows a perspective view of a prior art form of magnetoresistive sensor structure (with a top shield and dielectric omitted) interpreted to show what would seem to be the most favorable specific embodiment.
  • FIG. 1B shows a plan view of the head of FIG. 1A.
  • FIG. 1C shows a front elevation view of the head of FIG. 1A.
  • FIG. 2A shows a perspective view of a magnetoresistive sensor structure in accordance with this invention.
  • FIG. 2B shows a plan view of the head of FIG. 2A.
  • FIG. 2C shows a front elevational view of the head of FIG. 2A.
  • FIG. 3 is a plan view of a modification of FIG. 1A.
  • FIG. 4 is a plan view of another modification of FIG. 1A.
  • FIG. 5 shows an equivalent electrical circuit for the invention as embodied in FIGS. 2A-2C.
  • FIGS. 1A-C a modification of the arrangement shown in FIG. 5 of U.S. Pat. No. 3,864,751 of Beaulieu et al is shown.
  • a substrate 20 comprising a magnetic shield is covered with an insulating layer 12.
  • a layer of a magnetoresistive element 10 On the layer 12 is vacuum deposited a layer of a magnetoresistive element 10.
  • a shunt layer 26 which is nonmagnetic but of comparable resistivity and adapted to carry a comparable current composed of a material such as titanium.
  • An insulation layer 27 is deposited upon shunt layer 26, and a layer of a bias film 16 which can be composed of a Permalloy composition (80% Ni, 20% Fe).
  • the Beaulieu et al patent does not deal in detail with the issue of location of the conductor leads 28 and 30 which connect the sensor layer 10 and shunt layer 26 to the current source 24.
  • such considerations are important. It would appear that the best way to connect layer 10 and 26 to leads 28 and 30 is as shown in FIG. 1, with leads 28 and 30 extending under insulation layer 27 and bias film 16.
  • the conductors 28 and 30 In order to provide adequate current to the layers 10 and 26, the conductors 28 and 30 must be on the order of 1000A thick which creates a step over which insulation layer 27 and bias layer 16 must extend.
  • FIGS. 2A-C show a similar magnetoresistive sensor to that shown in FIGS. 1A-C modified in accordance with this invention.
  • a substrate 60 is coated with dielectric layer 52 composed preferably of glass.
  • a magnetoresistive sensor thin film layer 50 such as Permalloy nickel-iron about 200A-600A thick is deposited by evaporation at a substrate temperature near 250° C on the smooth dielectric layer 52 to provide an excellent magnetoresistor.
  • a thin film 66 about 100A to 200A thick of a high resistivity conductor such as titanium is deposited upon sensor layer 50 at room temperature to reduce grain size of the titanium.
  • a thin film layer 56 about 140A to 425A thick of a hard or soft magnetic biasing material such as Permalloy nickel-iron, or CoCr is deposited upon film 66.
  • layer 56 should be about 0.707 of the thickness of magnetoresistive layer 50.
  • An inverted U-shaped outline is formed by selective etching of all three layers through use of a single photoresist pattern or the equivalent to provide a sensor stripe plus support for the electrical leads 68 and 70 which are deposited upon the legs of the inverted U-shape formed by etching or the equivalent.
  • the shape of the MR sensor sandwich can also be a rectangular one with the leads stepping over it.
  • the low temperature technique of depositing the shunt layer 66 results in minimization of the increase in coercivity normally observed in depositing magnetic material over a layer because of the reduced grain size of shunt layer 66.
  • layer 56 is selected to be thinner than layer 50 when using Permalloy nickel-iron so that it will be saturated and will not be capable of exhibiting the magnetoresistive effect. Such saturation is imposed by the magnetic field generated by the sensor 50 and the shunt layer 66.
  • layer 26 would have to be etched prior to deposition of conductors 28 and 30, insulating layer 27 and bias layer 26.
  • layer 26 would have its shape formed separately from layer 26 after several intervening steps.
  • the configurations of layers 10 and 16 after etching should be identical and perfectly aligned to avoid substantially increasing Barkhausen noise. Achieving that degree of alignment would impose impossible fabrication problems. From a practical point of view, such alignment is not possible without a procedure whereby the three layers are etched simultaneously as is possible in the arrangements of FIGS. 1A-C and 2A-C.
  • the arrangement of FIG. 3 is also unsatisfactory because it would provide a nonuniform magnetic bias since sensor 10 extends beyond bias layer 16.
  • FIG. 4 shows another modified arrangement of the Beaulieu et al patent which will eliminate short circuits, but which also suffers the fabrication difficulties of the above-mentioned case.
  • a question which is immediately raised by placing the shunt and bias layers electrically in parallel with the magnetoresistor as in FIGS. 2A-C is one of the degree to which the parasitic shunt resistances of those layers degrade the signal output.
  • FIG. 5 an equivalent electrical schematic circuit for the sandwich of FIGS. 2A-C is shown.
  • a biased magnetoresistor of resistance R without any shunt has an AC output voltage of I ⁇ R where ⁇ R is the change of resistance caused by a magnetic field, and where the sensing current I is limited by power dissipation considerations (I 2 R).
  • a biased magnetoresistor of resistance R with a shunt of resistance ⁇ R has an output AC voltage of I' ⁇ R ⁇ /1+ ⁇ .
  • I' can be of a larger value than I since the magneto-resistor-shunt combination can withstand a higher current than the magnetoresistor alone at equal power dissipation I' 2 R ⁇ / 1+ ⁇ ).
  • the value of ⁇ is near 1 and I' equals about 1.4I. Therefore, the sensor of FIG. 2A-C provides 70% of the maximum output signal of a magnetoresistor without a shunt. This is considered to be a negligible loss of signal amplitude in view of elimination of the unreliability caused by the breakdown of the thin insulating layers which were required by Beaulieu et al.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Magnetic Heads (AREA)
  • Hall/Mr Elements (AREA)
  • Measuring Magnetic Variables (AREA)
US05/633,047 1975-11-18 1975-11-18 Magnetoresistive sandwich including sensor electrically parallel with electrical shunt and magnetic biasing layers Expired - Lifetime US4024489A (en)

Priority Applications (8)

Application Number Priority Date Filing Date Title
US05/633,047 US4024489A (en) 1975-11-18 1975-11-18 Magnetoresistive sandwich including sensor electrically parallel with electrical shunt and magnetic biasing layers
IT2758376A IT1075854B (it) 1975-11-18 1976-09-24 Trasduttore magnetoresistivo per fezionato
GB4155076A GB1534735A (en) 1975-11-18 1976-10-06 Thin film magnetoresistive sensor
FR7631436A FR2332587A1 (fr) 1975-11-18 1976-10-11 Capteur magnetoresistif d'informations magnetiques et son procede de fabrication
JP13134776A JPS5262417A (en) 1975-11-18 1976-11-02 Magnetic head
DE2650484A DE2650484C2 (de) 1975-11-18 1976-11-04 Magnetoresistiver Dünnfilm-Abtastkopf und Verfahren zu seiner Herstellung
NL7612457A NL7612457A (nl) 1975-11-18 1976-11-10 Magnetoresistieve afleeskop.
CA265,857A CA1068412A (en) 1975-11-18 1976-11-16 Magnetoresistive sandwich including sensor electrically parallel with electrical shunt and magnetic biasing layers

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Application Number Priority Date Filing Date Title
US05/633,047 US4024489A (en) 1975-11-18 1975-11-18 Magnetoresistive sandwich including sensor electrically parallel with electrical shunt and magnetic biasing layers

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US4024489A true US4024489A (en) 1977-05-17

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US (1) US4024489A (enrdf_load_stackoverflow)
JP (1) JPS5262417A (enrdf_load_stackoverflow)
CA (1) CA1068412A (enrdf_load_stackoverflow)
DE (1) DE2650484C2 (enrdf_load_stackoverflow)
FR (1) FR2332587A1 (enrdf_load_stackoverflow)
GB (1) GB1534735A (enrdf_load_stackoverflow)
IT (1) IT1075854B (enrdf_load_stackoverflow)
NL (1) NL7612457A (enrdf_load_stackoverflow)

Cited By (36)

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US4210946A (en) * 1977-09-30 1980-07-01 Sony Corporation Magnetic recording medium
US4239835A (en) * 1976-07-15 1980-12-16 Matsushita Electric Industrial Co., Ltd. Magnetic recording medium
US4277808A (en) * 1978-05-26 1981-07-07 Sony Corporation Magnetic transducer head
DE3343035A1 (de) * 1982-11-30 1984-05-30 Copal Co. Ltd., Tokyo Verfahren zur herstellung eines magnet(mess)fuehlers mit mindestens zwei elementen mit magnetischer widerstandsaenderung
US4503394A (en) * 1981-07-01 1985-03-05 Hitachi, Ltd. Magnetoresistive sensor having a closed domain structure and electrode biasing
US4504787A (en) * 1982-04-05 1985-03-12 Honeywell Inc. Electronic watthour meter
US4533872A (en) * 1982-06-14 1985-08-06 Honeywell Inc. Magnetic field sensor element capable of measuring magnetic field components in two directions
US4603091A (en) * 1983-11-05 1986-07-29 Alps Electric Co., Ltd. Recording medium for perpendicular magnetization
US4754431A (en) * 1987-01-28 1988-06-28 Honeywell Inc. Vialess shorting bars for magnetoresistive devices
US4807073A (en) * 1986-04-18 1989-02-21 Hitachi, Ltd. Magnetoresistance type magnetic head and method for fabricating same
US4847584A (en) * 1988-10-14 1989-07-11 Honeywell Inc. Magnetoresistive magnetic sensor
US4897288A (en) * 1987-01-28 1990-01-30 Honeywell Inc. Vialess shorting bars for magnetoresistive devices
US4918655A (en) * 1988-02-29 1990-04-17 Honeywell Inc. Magnetic device integrated circuit interconnection system
US4937521A (en) * 1987-07-07 1990-06-26 Nippondenso Co., Ltd. Current detecting device using ferromagnetic magnetoresistance element
US5018037A (en) * 1989-10-10 1991-05-21 Krounbi Mohamad T Magnetoresistive read transducer having hard magnetic bias
US5084794A (en) * 1990-03-29 1992-01-28 Eastman Kodak Company Shorted dual element magnetoresistive reproduce head exhibiting high density signal amplification
US5260652A (en) * 1992-03-25 1993-11-09 Seagate Technology, Inc. Magnetoresistive sensor with electrical contacts having variable resistive regions for enhanced sensor sensitivity
US5262666A (en) * 1989-05-15 1993-11-16 Nippondenso Co., Ltd. Semiconductor device with a nickel alloy protective resistor
EP0613119A3 (en) * 1993-02-22 1996-01-31 Nec Corp Magnetoresistive sensor and manufacturing process.
US5529831A (en) * 1993-12-09 1996-06-25 Alps Electric Co., Ltd. Thin film device
US5530608A (en) * 1992-12-30 1996-06-25 International Business Machines Corporation Hard-film stabilized soft-film biased magnetoresistive sensor with an alumina underlayer pattern for improved longitudinal servo-positioning linearity and stability
US5576908A (en) * 1994-04-01 1996-11-19 International Business Machines Corporation Actuator and file level initialization of magnetoresistive transducers
US5664316A (en) * 1995-01-17 1997-09-09 International Business Machines Corporation Method of manufacturing magnetoresistive read transducer having a contiguous longitudinal bias layer
US5767673A (en) * 1995-09-14 1998-06-16 Lucent Technologies Inc. Article comprising a manganite magnetoresistive element and magnetically soft material
US5774309A (en) * 1994-09-16 1998-06-30 Tdk Corporation Magnetic transducer and thin film magnetic head
US5920980A (en) * 1997-03-05 1999-07-13 Headway Technologies, Inc. Method of making a soft adjacent layer (SAL) magnetoresistive (MR) sensor element with electrically insulated soft adjacent layer (SAL)
US5978181A (en) * 1997-03-04 1999-11-02 Fujitsu Limited Magnetic head and magnetic recording/reproducing apparatus
US5985162A (en) * 1997-03-05 1999-11-16 Headway Technologies, Inc. Method for forming soft adjacent layer (SAL) magnetoresistive (MR) sensor element with electrically insulated soft adjacent layer (SAL)
US6007731A (en) * 1998-03-23 1999-12-28 Headway Technologies, Inc. Soft adjacent layer (SAL) magnetoresistive (MR) sensor element with electrically insulated soft adjacent layer (SAL)
US6040962A (en) * 1997-05-14 2000-03-21 Tdk Corporation Magnetoresistive element with conductive films and magnetic domain films overlapping a central active area
US6160687A (en) * 1998-05-29 2000-12-12 International Business Machines Corporation Method of providing improvement in the prevention of shield-to-lead shorts in MR/GMR heads, MR/GMR heads produced thereby and storage devices using MR/GMR heads produced thereby
US6215301B1 (en) * 1998-04-24 2001-04-10 U.S. Philips Corporation Magnetoresistive detector comprising a layer structure and a current directing means
US6353316B1 (en) 1998-06-18 2002-03-05 Tdk Corporation Magneto-resistive element and thin film magnetic head comprising the same
US6373667B1 (en) * 1998-03-23 2002-04-16 Headway Technologies, Inc. Single stripe magnetoresistive (MR) head
US20040120185A1 (en) * 2002-12-21 2004-06-24 Kang Hee Bok Biosensor and sensing cell array using the same
US20040150397A1 (en) * 2001-07-19 2004-08-05 Akio Kuroe Magnetic sensor and method for manufacturing the same

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JPS56169171U (enrdf_load_stackoverflow) * 1980-05-20 1981-12-14
JPS56165922A (en) * 1980-05-23 1981-12-19 Matsushita Electric Ind Co Ltd Production of magnetic head
EP0048289A1 (de) * 1980-09-19 1982-03-31 Ibm Deutschland Gmbh Magnetoresistiver Dünnfilm-Abtastkopf mit Unterdrückung thermisch induzierter Spannungsspitzen
JPS57211910A (en) * 1981-06-24 1982-12-25 Tokyo Shibaura Electric Co Conductor device
DE3374622D1 (en) * 1982-04-14 1987-12-23 Matsushita Electric Ind Co Ltd A playback head for perpendicular magnetic recordings
JPS5945629A (ja) * 1982-09-07 1984-03-14 Alps Electric Co Ltd 薄膜磁気ヘツド
GB2143071B (en) * 1983-07-09 1987-10-28 Magnetic Components Limited Magnetoresistive transducers
US4639806A (en) * 1983-09-09 1987-01-27 Sharp Kabushiki Kaisha Thin film magnetic head having a magnetized ferromagnetic film on the MR element
JP2980043B2 (ja) * 1996-12-24 1999-11-22 日本電気株式会社 磁気ヘッド及び磁気記録再生方法

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US3814863A (en) * 1972-10-11 1974-06-04 Ibm Internally biased magnetoresistive magnetic transducer
US3940797A (en) * 1973-09-20 1976-02-24 International Business Machines Corporation Shielded magnetoresistive magnetic transducer
US3864751A (en) * 1973-10-04 1975-02-04 Ibm Induced bias magnetoresistive read transducer
US3947889A (en) * 1973-10-23 1976-03-30 Compagnie Internationale Pour L'informatique Electromagnetic transducers

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Cited By (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4239835A (en) * 1976-07-15 1980-12-16 Matsushita Electric Industrial Co., Ltd. Magnetic recording medium
US4210946A (en) * 1977-09-30 1980-07-01 Sony Corporation Magnetic recording medium
US4277808A (en) * 1978-05-26 1981-07-07 Sony Corporation Magnetic transducer head
US4503394A (en) * 1981-07-01 1985-03-05 Hitachi, Ltd. Magnetoresistive sensor having a closed domain structure and electrode biasing
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Also Published As

Publication number Publication date
JPS5640406B2 (enrdf_load_stackoverflow) 1981-09-21
DE2650484C2 (de) 1981-09-24
GB1534735A (en) 1978-12-06
IT1075854B (it) 1985-04-22
JPS5262417A (en) 1977-05-23
FR2332587B1 (enrdf_load_stackoverflow) 1980-07-25
CA1068412A (en) 1979-12-18
NL7612457A (nl) 1977-05-23
DE2650484A1 (de) 1977-06-08
FR2332587A1 (fr) 1977-06-17

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