US3919587A - Electronic storage tube - Google Patents

Electronic storage tube Download PDF

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US3919587A
US3919587A US422859A US42285973A US3919587A US 3919587 A US3919587 A US 3919587A US 422859 A US422859 A US 422859A US 42285973 A US42285973 A US 42285973A US 3919587 A US3919587 A US 3919587A
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potential
potentials
storage area
storage
electrodes
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Hiroki Sato
Toseki Saito
Koji Hirano
Hiroh Takahashi
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Sony Corp
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Sony Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00—Cathode ray tubes; Electron beam tubes
    • H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
    • H01J31/58—Tubes for storage of image or information pattern or for conversion of definition of television or like images, i.e. having electrical input and electrical output
    • H01J31/60—Tubes for storage of image or information pattern or for conversion of definition of television or like images, i.e. having electrical input and electrical output having means for deflecting, either selectively or sequentially, an electron ray on to separate surface elements of the screen

Definitions

  • One of the electrodes is overlaid on one of the surfaces of the insulating layer in a pattern of stripes or cross-stripes and the exposed areas of the insulating layer are scanned by electron beams to establish a storage charge pattern. Different potentials are applied to the two electrodes to cause them to operate in a wide dynamic range.
  • the present invention relates mainly to an electronic storage tube and more particularly to the operation of a grid control type of storage tube using a storage target of insulating material which has electrodes on both surfaces thereof.
  • a conventional electron image storage device such as that disclosed in U.S. Pat. No. 3,631,294 is provided with a single storage target.
  • an electron gun directs an electron beam at a target on the inner face of the tube.
  • the target consists of an electrode layer of silicon with an insulating layer covering the surface of the electrode layer that faces the gun.
  • the insulating layer has apertures in it through which electrons from the gun can reach the electrode.
  • the tube has four modes for each operating cycle: ready, writing, read out," and erase.”
  • ready mode a relatively low voltage of about 20 volts is applied to the target and the potential on the side of the insulator facing the electron source is zero volts.
  • the target voltage is raised to the write" level of, for example, 200 volts.
  • the secondary emission ratio of the apertured insulator layer is greater than unity, the voltage at the surface of the insulating layer facing the electron source will be 180 volts, which is the target voltage of 200 volts less the voltage difference of 20 volts that was present between the two surfaces of the insulator during the ready" mode.
  • Information is then stored, or written, by scanning the target surface with a beam of electrons from the electron source.
  • the target voltage is reduced to, for example, 5 volts. Then, when the electron beam scans the target, some of its electrons will be repelled according to the stored charge pattern.
  • the target voltage is again raised, for example to 200 volts, and the beam is caused to scan the surface again.
  • the larger the aperture area of the insulator layer which is the same thing as saying that the larger the area of catching beams on the target electrode is, the larger the output of the tube is.
  • the aperture area is made large, the surface potential required to cut-off the beam at the read out" time must have a large negative value.
  • the maximum voltage across the insulating layer at the write" time is required to increase. This means that the voltage across the insulating layer at the ready" process must be made large. However, this voltage must also be made less than the withstanding voltage of the insulating layer, which is the maximum permissible voltage that can be applied across it.
  • a storage insulator to form a target.
  • a voltage across the thickness of the insulator can be freely established for the simultaneous enforcement of erase" and ready” processes.
  • the potential range of storage areas on the surface of the insulator can be selected to be large, since a voltage applied thereto can be established in both polarities.
  • FIG. I is a schematic cross-sectional view showing a conventional electronic storage tube
  • FIG. 2 is an enlarged cross sectional view showing a target of the storage tube of FIG. 1;
  • FIG. 3 is a graph showing the relation between secondary emission ratio of an insulator layer and target voltage which is used for its explanation
  • FIG. 4 is a schematic cross-sectional view showing one example of a storage tube according to this invention.
  • FIG. 5 is an enlarged cross-sectional view showing the principal part of the target according to this invention.
  • FIG. 6 is a view showing the equivalent circuit of the target according to this invention.
  • FIG. 7 is an enlarged cross-sectional view of the principal part showing another example of the target according to this invention.
  • FIGS. 8A-8E are process views showing one example of the method for fabricating the target according to this invention.
  • an electron beam emitting source, or an electron gun G is composed of a cathode K, a first grid G a second grid G and a third G
  • a voltage of, for example, volts to zero volts is applied to the first grid G, in accordance with writing signals while constant voltages of 300 and 450 volts are applied to the second and thirds grids G and 6;, respectively.
  • Reference numerals 2 and 3 indicate an alignment coil and a deflection coil, respectively.
  • a target 4 is disposed on a face plate la of the tube envelope l and a beam landing adjusting grid G located opposite the target 4.
  • the target 4 comprises an electrode 5 on the inner surface of the face plate la of the envelope 1 and made of, for example, a silicon (Si) layer 5 and an insulator layer 6 made of silicon dioxide (SiO which is formed by oxidizing the surface of the electrode 5.
  • the insulator layer 6 has a plurality of apertures 7 formed by photo-engraving so that the electrode 5 is partially exposed therethrough at its surface.
  • a storage tube of such construction is operated by the repetition of four processes, that is, ready, write, read-out and erase.
  • a target voltage V applied to the electrode 5 is selected to be, for example, volts with respect to the cathode K.
  • the secondary electron emission ratio 8 of the insulator layer 6 is made 5 l and is varied according to the energy of electron beam bombarding it. This energy corresponds to the target voltage V as shown in FIG. 3.
  • the ratio 8 has values such as 1 when the voltage V is less than 40 volts and 8 l when the voltage V is more than 40 volts.
  • V on the surface of the insulator layer facing the cathode K is balanced with the cathode potential at zero volts.
  • the voltage E can be selected to have a large value by selecting the voltage value of V to be large, but in the practical case this value is selected to be less than the withstanding voltage of the insulator 6, for example about 20 volts.
  • the potential V applied to the electrode 5 is first selected to have a value to make the ratio 8 of the insulator layer 6 8 l for example, 200 volts. lfthe potential V, is thus selected to be 200 volts, the surface potential V of the insulator layer 6 will be such as V V-, E 200 20 180 volts.
  • the surface potential V of the insulator layer 6 becomes more positive in response to beam density and finally increases to 200 volts.
  • the voltage V can be varied in a range of 180 to 200 volts according to the writing signal.
  • the distribution of potentials according to the writing signals forms a pattern of potentials on the surface of the insulator layer 6.
  • theoretically writing can be effected with the voltage V in a range between 180 and 200 volts, that is, within a range of 20 volts, but practically the voltage V, is varied in a l5 volt range between 180 and I95 volts to maintain a linear characteristic,
  • the writing is carried out as a potential pattern in which the voltage E applied to the insulator layer 6 typically E; V V 200 (ISO to 195), or between about 20 volts and 5 volts.
  • this written pattern is read out as follows. At first, the target V is lowered to, for example, 5 volts. As a result, the surface potential V is changed with a distribution in accordance with the written pattern.
  • the written pattern is formed by the distribution of E,,,-, which is in the range from 5 to 20 volts
  • the beam moving through the aperture 7 of the insulator layer 6 to the target electrode 5 is modulated according to the distribution of the surface potential V of the insulator layer 6 so that it is restrained from reaching the electrode 5 at an area where the surface potential V has a large negative value to reduce a target current. That is, an output is obtained in accordance with the written pattern.
  • the written pattern is erased.
  • the target voltage V is changed to a value at which the ratio of the insulator layer 6 can be 8 l, for example, 200 volts, and beam scanning is effected.
  • the surface potential V is balanced with 200 volts which is the same as V and hence the voltage E becomes zero.
  • FIGS. 4 and 5 A description will now be given on one example of an electronic storage tube according to the present invention with reference to FIGS. 4 and 5. Elements of FIGS. 4 and 5 corresponding to those of FIGS. 1 and 2 are indicated by the same reference characters and without repeating their description.
  • a target 13 includes a target electrode 9 deposited on the inner surface of an insulating base plate or the face plate la of the tube envelope 1, an insulator layer 10 formed over the face plate la, and a signal electrode 12 formed on the layer 10 and having a plurality of small boxes or slit-like apertures 11 through which the insulator layer 10 is partially exposed.
  • a capacitive element C is equivalently formed at each aperture 11 so that the electrode 12 is disposed adjacent to each capacitive element.
  • the target electrode 9 can be formed by vaporization of, for example, a layer of chromium Cr with a thickness of about 3,000 A.
  • the insulator layer 10 is formed in such a manner that the surface of the electrode 9 made of chromium is oxidized to a thickness of about several tens of A to form chrome oxide (CrO) as its foundation.
  • CrO chrome oxide
  • a layer of SiO or SiO having a thickness of about I to 5 microns (u) is vaporized on the CiO layer.
  • the signal electrode 12 is formed by vaporization of, for example, a layer of aluminum (Al) having a thickness of about 1,000 to 2,000 all over the surface.
  • the apertures II are formed by photoengraving.
  • a condition ready for writing is establised.
  • the voltage V applied to the target electrode 9 is selected to be, for example, 200 volts, while the voltage V applied to the signal electrode 12 is selected to be volts, or about 20 volts less than the voltage V
  • an electron beam 14 is emitted from the electron beam emitting source or gun to scan the tar get.
  • the secondary emission ratio 8 of the insulator layer 10 is high enough so that 6 l as described with reference to FIG. 3.
  • the surface of the capacitve element C exposed through the aperture 11 and bombarded by the electron beam discharged secondary electrons causing the surface to be positively charged.
  • the voltage E applied to the capacitive element C in the aperature 11 formed by the insulator layer 10 becomes E V,- V 200 180 20 volts.
  • the voltage E can be freely chosen by the selection of the respective voltages V, and Vp of the electrodes 9 and 12, but it is preferable that it be less than the withstanding voltage of the insulator layer.
  • the voltages V and V are selected so as to make the voltage E for example, 20 volts.
  • the voltage V should have a low enough value that the electron beam may be provided with enough energy to make the surface potential V equal to the potential V quickly by a small number of scannings.
  • the writing in response to the aimed signal is carried out.
  • the voltage V applied to the signal electrode 12 is raised to a value higher than V for example, to 220 volts, and the voltage V applied to the electrode 9 is kept at, for example, 200 volts. If the electron beam is subjected to density modulation in response to the writing signal under this condition in which the insulator layer 10 is in a condition such that 8 1, the surface potential V in the aperture 11 of the insulator layer 10 will be varied in a range from 180 volts, which was present during the ready process to the 220 volts applied to the electrode 12 at the present stage.
  • the potential V will be lSO volts at areas where no writing is carried out by the electron beam but will be at the 220 volt maximum value at other areas where a great amount of electron beam is radiated.
  • the surface potential V of the capacitive element C will be provided with a potential pattern that has a potential distribution of 180 to 220 volts as determined by the writing signal.
  • the surface potential V which varies according to writing can have a range of 40 volts, i.e., from 180 to 220 volts.
  • the surface potential V is in a range of 35 volts, i.e., between 180 to 215 volts, which is substantially greater than the prior example that has a range of only about 15 volts, as described in FIGS. 1 and 2.
  • the voltage applied to the insulator layer 10 is the difference between the voltage V which is 200 volts, and the voltage V which may be 220 volts, making the difference approximately equal to volts between the opposite electrodes 9 and 12.
  • the voltage applied to the capacitive element C or the voltage E across the thickness of the insulator layer 10 in the aperture 11 is E V V 200 (180 to 215) 20 to l5 volts which means that the maximum voltage applied thereto is only 20 volts, so that all of the voltages applied to the respective portions of the insulator layer [0 can be kept below the insulation breakdown voltage.
  • the potential V of the target electrode 9 is selected to be, for example, 20 volts and the voltage V applied to the signal electrode 12 is selected to be, for example, [0 volts. Since, at this time, the potential difference Ii,- across the thickness of the capacitive element C is distributed in a range of 20 to l5 volts for writing, the surface potential V of each element C is distributed in a range of V E; 20 (20 to 15) 40 to 5 volts or in a range of 35 volts.
  • the electron beam 14 is modulated in accordance with the surface potential V, of each capacitive element C so that the electron beam may not easily reach the electrode 12 particularly adjacent to a portion of the element C where the surface potential V; thereofhas large negative value.
  • the beam current is modulated according to the written pattern, so that a signal output in response to the written pattern is derived from the signal electrode 12.
  • the written pattern is erased.
  • This erasing operation can be carried out simultaneously with the ready" process described above. That is, a voltage of 200 volts, for example, is applied to the target electrode 9 to make the secondary emission ratio ofthe insulator layer 10 5 l and to provide a high level of energy to the electron beam so that the surface potential V of the capacitive element C can be quickly balanced with the potential V of the signal electrode 12.
  • a voltage of I volts is applied to the signal electrode 12 to establish a predetermined potenial difference for example, 20 volts between the opposite ends of the capacitive element C.
  • the insulator layer 10 isrequired to prevent the production of pinholes or the like, which might connect the electrodes 9 and 12.
  • the insulator layer 10 it is preferable for the insulator layer 10 to be thin to make the capacitance of the element C large.
  • the equivalent circuit of which is shown in FIG. 6 a stray capacity C, is formed between each capacitive element C and signal electrode 12.
  • the surface potential V of the element C and the potential V of the electrode 12 are made equal in the "erase and ready" process, but in the write process they are made different and hence a potential difference V is provided there between.
  • the surface potential V is varied by the influence from the voltage applied to the signal electrode l2 and its variation AV is given as Accordingly, in order to make the variation as small as possible, it is necessary to make C, small and C large. For this reason, the insulator layer 10 forming the capacitive element C should preferably be thin as men tioned above.
  • the insulator layer is constructed with thin patrons [0A thickness 1, which forms the capacitive elements C and thick portions 108 of thickness 1 which forms the electrodes 12 as shown in FIG. 7.
  • the insulator layer having portions 10A and 10B of different thickness I and r is constructed by making the insulator layer 10 so that its original thickness is relatively great. Sections of this thick layer 10 are partially etched away a required depth to form the portion 10A with a thickness r,. However, it is difficult to stop the etching at the required depth for the insulator layer 10 and to perform the etching with no side-etching being caused for the thick insulator layer. In this case, a special method is used in order to form the insulator layer 10 having a small thickness t, at one part and a large thickness at the other part. One example of this special method will now be described with reference to FIG. 8.
  • the target electrode 9 is formed by vaporization of, for example, chromium entirely on the substrate or face plate In. Then, on the electrode 9 there are successively deposited more than two layer, for example, first, second and third insulating layers 10a, lOb and [0c by utilizing a well known technique such as a thermal cracking method or the like (FIG. 8A).
  • the first insulating layer 10a is formed of a material providing a large value of the secondary emission ratio 6 by the bombardment of electrons having a proper level of energy.
  • the layer 100 may be MgF CaF or the like deposited on the face plate la with the thickness 1,, for example, 5,000A suitable for constructing the capacitive element C as described in connection with FIG. 7.
  • the second insulating layer 10b is formed by depositing on the layer 100 a material which is capa ble of being etched differently from the first insulating layer 100 and provides almost no corrosion to the first insulating layer 10a by its etching liquid, for example, M 0
  • the thickness of the second layer 10b may be, for example, 5,000A.
  • the third insulating layer 10c made ofsuch a material different from those of the first and second insulating layers 10a and 10b but capable of being etched is formed by deposition on the layer 10b.
  • the layer 10c may be SiO having a thickness of about I
  • the material of this layer is also not corroded substantially by the etching liquids for the first and second insulating layers.
  • the total thickness of the first, second and third insulating layers 10a, 10b and 10c is equal to the large thickness r required between the both electrodes 9 and 12 as described in connection with FIG. 7.
  • the metal layer 12 can be formed by vaporization, of, for example, a gold layer on a chromium layer.
  • the metal layer 12' is etched, except where covered by the resist 15, to remove unnecessary portions and thereby form the electrode 12 (FIG. 8D).
  • the third insulating layer 106 made of, for example, SiO is etched by fluoric acid to form an aperture 16 inside the aperture 11.
  • the second insulating layer 10b is etched through the aperture 16 by an etching liquid, for example, heated phosphoric acid to provide an aperture l7 coincident with the aperture 16(FIG.8E).
  • the first insulating layer 10a is not corroded by the etching liquid for the second insulating layer 10b, so that the layer 10:: remains as it is.
  • the respective insulating layers 10a, lOb and 100 remain as they are to form the insulator layer 10 with the large thickness 1 equal to the sum of those of the respective layers, so that the insulation between the electrodes 9 and 12 can be positively maintained.
  • the insulator layer 10 is formed with the small thickness r, equal to that of the single insulating layer 10a by a recess 18 formed with the apertures 16 and 17, so that the capacity of the capacitive element C can be made large.
  • the portion between the electrodes 9 and 12 is formed not by the single insulating layer with large thickness but by a plurality ofdifferent insulating layers being overlapped successively and hence there is little possibility that the pinholes or defective portions in the layers 10a, 10b and I00 will be coincident with one another so as to connect the electrodes 9 and 12 and cause a troublesome short-circuit between the electrodes 9 and 12.
  • the insulator layer 10 is formed by overlapping the insulating layers 10a, lOb and 10c that respond to different etching liquids. Accordingly, even though a deep recess 18 is formed inside the aperture 11 of the insulator layer 10, it is possible to prevent the recess 18 from being enlarged by side-etching.
  • the thickness 1, of the portion forming the capacitive element C is defined by the thickness of the insulating layer 100, in the case of forming the recess 18 high accuracy in control of the etching process is not necessary for the control of its depth. Thus, the uniformity of productivity and characteristics of the targets can be improved.
  • the method for concretely forming the target 13 and its construction are not limited to the above-mentioned example.
  • the face plate of the tube envelope is used as the base plate in the foregoing example, but it is also possible for electrodes to be vaporized on opposite surfaces of a base plate, for example, a glass plate about 40y. thick. Thereafter the exposed surface of the signal electrode side is etched about 1 to 2p. to form a target which is attached to the face plate.
  • the signal electrode 12 separated from the target electrode 9 there is also provided the signal electrode 12 to which the potential V different from the target potential V if applied.
  • the erase" and ready processes can be carried out at the same time, though they may be effected separately.
  • the potential V of, for example, 200 volts is applied to the electrode 9 while a potential V of l volts is applied to the electrode 12.
  • an electron beam having a large level of bombarding energy is emitted to erase the previously written information quickly and to complete the ready condition in which the voltage E, of about 20 volts is applied to the capacitive element C.
  • the drive and circuit arrangement to be used with the tube of this invention can be simplified and also the time period from "read out" to the beginning of following writing can be shortened.
  • the potential V, of the electrode 12 can be raised to a value different from that of the electrode 9, for example, 220 volts.
  • the writing can be made on the capacitive element C in a range between positive and negative voltages with the potential of the electrode 9 as the reference therebetween, so that a voltage range more than twice that of the conventional storage tube can be theoretically provided.
  • the writing can be effected in a range of better linearity and also in the case of "read out" process the information can be derived as a large output, so that the signal-to-noise ratio can be enhanced.
  • the voltage applied to the insulator layer can be made lower than its insulation break-down voltage at the respective portions.
  • the storage tube according to this invention is not limited to the storage of electric charge but can be used as a light-electricity transducer, that is, as an image pickup tube.
  • a target electrode is formed by a transparent conductive layer such as NESA, while a storage insulating layer is formed by a photoconductive layer such a three-element compound of As-Sb-S on which a signal electrode of mesh type or stripe-type is formed.
  • a target is provided.
  • a voltage of, for example, 30 volts is applied to the target electrode while the signal electrode is energized with, for example, zero volts.
  • the target is then scanned by an electron beam.
  • an optical pattern is projected from the side of transparent electrode.
  • the amount of light causes the photoconductive layer to change its resistance, thereby changing its surface potential.
  • the surface potential approaches 30 volts at areas where no light is projected.
  • the target electrode is energized by a voltage of, for example, zero volts while the signal electrode is energized by a voltage of, for example, 5 volts.
  • a current according to the optical pattern can be derived from the signal electrode.
  • This system is not of a type in which the charging and discharging currents of a capacitance in the photoconductive layer are read out as in the case of vidicon.
  • This system is of a grid control type, so that the read out operation can be repeatedly carried out.
  • a storage tube comprising:
  • A. a target comprising:
  • a second conductive layer comprising a pattern of apertures through which said insulating layer is directly ex posed; the insulating layer being thinner at regions corresponding to each of said apertures than at regions covered by solid portions of said second conductive layer;
  • C. means to apply different potentials to said first and second conductive layers to establish, selectively, conditions for recording a charge pattern of electrons from said source on said insulating layer and for reading said pattern and for erasing said pattern.
  • said insulating layer comprises a plurality of layers of insulating material responsive to different etching materials whereby selected areas of said insulating layer may be etched to controlled depths.
  • a method of storing an image in a storage tube comprising electron emitting means and a target including a storage material having first and second surfaces, a first electrode provided on said first surface of the storage material, and a second electrode partially provided on said second surface of the storage material, said second surface having a storage area to be scanned by an electron beam from said electron emitting means, said method comprising the steps of: applying first and second potentials to said first and second electrodes, respectively, the first and second potentials having a value sufficient to cause secondary electron emission from said storage area when scanned by said electron beam but the potential difference therebetween being less than the breakdown voltage of said storage material, to make said storage area substantially the same potential; applying third and fourth different potentials to said first and second electrodes, respectively, to establish a charge pattern on said storage area; and applying fifth and sixth potentials to said first and second electrodes, respectively, to detect said pattern.
  • a method of storing an image in a storage tube comprising electron emitting means and a target including a storage material having first and second surfaces, a first electrode provided on said first surface of the storage material, and a second electrode partially provided on said second surface of the storage material, said second surface having a storage area to be scanned by an electron beam from said electron emitting means, said method comprising the steps of: applying first and second potentials to said first and second electrodes, respectively, the first potential being greater than the second potential, to make said storage area substantially the same potential when scanned by said electron beam; applying third and fourth potentials to said first and second electrodes, respectively, the fourth potential being greater than the third potential and being of sufficient value to cause secondary emission from said storage area when scanned by said electron beam so as to establish a charge pattern on said storage area; and applying fifth and sixth potentials to said first and second electrodes, respectively, to detect said pattern.
  • a method of storing an image in a storage tube comprising electron emitting means and a target including a storage material having first and second surfaces, a first electrode provided on said first surface of the storage material, and a second electrode partially provided on said second surface of the storage material, said second surface having a storage area to be scanned by an electron beam from said electron emitting means, said method comprising the steps of: applying first and second different voltage potentials to said first and second electrodes, respectively, to make said storage area substantially the same potential when scanned by said electron beam; applying third and fourth different potentials to said first and second electrodes, respectively, so as to establish a charge pattern on said storage area, and applying fifth and sixth different potentials to said first and second electrodes, respectively, the difference between said fifth and sixth potentials being at least as great as the range of the potential distribution corresponding to said charge pattern on said storage area.
  • a method of storing an image in a storage tube comprising electron emitting means and a target including a storage material having first and second surfaces, a first electrode provided on said first surface of the storage material, and a second electrode partially provided on said second surface of the storage material, said second surface having a storage area to be scanned by an electron beam from said electron emitting means, said method comprising the steps of: applying first and second potentials to said first and second electrodes, respectively, the first potential being greater than the second potential and having a value sufficient to cause secondary electron emission from said storage area when scanned by said electron beam, but the difference between said first and second potentials being less than the breakdown voltage of said storage material, to make said storage area substantially the same potential; applying third and fourth potentials to said first and second electrodes, respectively, the fourth potential being greater than the third potential and being of sufficient value to cause secondary emission from said storage area when scanned by said electron beam so as to establish a charge pattern on said storage area having a potential distribution within a range defined by the difference between said second and fourth potentials; and applying fifth

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  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
  • Printers Or Recording Devices Using Electromagnetic And Radiation Means (AREA)
US422859A 1972-12-08 1973-12-07 Electronic storage tube Expired - Lifetime US3919587A (en)

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JP12319072A JPS561742B2 (de) 1972-12-08 1972-12-08

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JP (1) JPS561742B2 (de)
CA (1) CA1018284A (de)
DE (1) DE2361243A1 (de)
FR (1) FR2210007B1 (de)
GB (1) GB1459797A (de)
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4704635A (en) * 1984-12-18 1987-11-03 Sol Nudelman Large capacity, large area video imaging sensor
US20050212936A1 (en) * 2004-03-25 2005-09-29 Eastman Kodak Company Extended dynamic range image sensor with fixed pattern noise reduction
US20060082670A1 (en) * 2004-10-14 2006-04-20 Eastman Kodak Company Interline CCD for still and video photography with extended dynamic range
US20090314928A1 (en) * 2008-06-19 2009-12-24 Christopher Parks High dynamic range image sensor

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US3398317A (en) * 1965-01-12 1968-08-20 Stanford Research Inst Information storage tube
US3670198A (en) * 1969-09-30 1972-06-13 Sprague Electric Co Solid-state vidicon structure
US3675134A (en) * 1971-05-27 1972-07-04 Rca Corp Method of operating an information storage tube

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Publication number Priority date Publication date Assignee Title
FR1180951A (fr) * 1957-08-08 1959-06-10 Csf Tube à mémoire

Patent Citations (3)

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Publication number Priority date Publication date Assignee Title
US3398317A (en) * 1965-01-12 1968-08-20 Stanford Research Inst Information storage tube
US3670198A (en) * 1969-09-30 1972-06-13 Sprague Electric Co Solid-state vidicon structure
US3675134A (en) * 1971-05-27 1972-07-04 Rca Corp Method of operating an information storage tube

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4704635A (en) * 1984-12-18 1987-11-03 Sol Nudelman Large capacity, large area video imaging sensor
US20050212936A1 (en) * 2004-03-25 2005-09-29 Eastman Kodak Company Extended dynamic range image sensor with fixed pattern noise reduction
WO2005096620A1 (en) 2004-03-25 2005-10-13 Eastman Kodak Company Extended dynamic range image sensor
EP2365691A1 (de) 2004-03-25 2011-09-14 Eastman Kodak Company Verfahren für Bilder mit erweitertem dynamischen Bereich
US20060082670A1 (en) * 2004-10-14 2006-04-20 Eastman Kodak Company Interline CCD for still and video photography with extended dynamic range
US20090314928A1 (en) * 2008-06-19 2009-12-24 Christopher Parks High dynamic range image sensor
US7964840B2 (en) 2008-06-19 2011-06-21 Omnivision Technologies, Inc. High dynamic range image sensor including polarizer and microlens

Also Published As

Publication number Publication date
IT1006683B (it) 1976-10-20
JPS561742B2 (de) 1981-01-14
JPS4979774A (de) 1974-08-01
FR2210007B1 (de) 1978-03-10
CA1018284A (en) 1977-09-27
NL7316891A (de) 1974-06-11
GB1459797A (en) 1976-12-31
IT1000821B (it) 1976-04-10
DE2361243A1 (de) 1974-06-12
FR2210007A1 (de) 1974-07-05

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