US3906425A - Oxide semiconductor-metal contact resistance elements - Google Patents

Oxide semiconductor-metal contact resistance elements Download PDF

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Publication number
US3906425A
US3906425A US362461A US36246173A US3906425A US 3906425 A US3906425 A US 3906425A US 362461 A US362461 A US 362461A US 36246173 A US36246173 A US 36246173A US 3906425 A US3906425 A US 3906425A
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United States
Prior art keywords
contact resistance
oxide semiconductor
resistance elements
metal
metal contact
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Expired - Lifetime
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US362461A
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English (en)
Inventor
Kan-Ichi Tachibana
Michihiro Nishioka
Mikiya Ono
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Mitsubishi Mining and Cement Co Ltd
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Mitsubishi Mining and Cement Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
    • H01C7/042—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient mainly consisting of inorganic non-metallic substances
    • H01C7/043—Oxides or oxidic compounds

Definitions

  • This invention relates to oxide semiconductor-metal contact'resistance elements comprising oxide semiconductors and metals or alloys attached thereto.
  • the contact resistance elements of this invention have the same remarkably stable volt-ampere characteristics as those of non-linear resistors,- and these volt-ampere characteristics are based on the property of the contact surfaces between the oxide sintered bodies and the metals or alloys, consequently the contact resistance elements can be made to be small-sized.
  • non-linear resistors (the term non linear resistor is hereinafter referred to as varistor) comprise silicon carbide varistors, silicon varistors, barium titanate varistors and the like.
  • I is the current flowing through the varistor
  • V is the voltage across the varistor
  • Silicon carbide varistors become worse in characteristics with smaller in size, then. exhibiting a values less than 3.
  • Silicon varistors and barium titanate varistors are bothv able to be small-sized, but are limited in uses because V values thereof are as low as O.5-l.2V.
  • This invention has been devised to overcome the defects of i the conventional non-linear resistors as I described hereinabove.
  • a primary object of this invention is to provide a nonlinear resistor which has a remarkably stable voltampere characteristic.
  • Another object of this invention is to provide a nonlinear resistor which is able to be small-sized.
  • a further object of this invention is to provide a nonlinear resistor which is inexpensive in cost.
  • an oxide semiconductor-metal contact resistance element comprising an oxide semiconductor, said oxide semiconductor having negative resistance and also possessing the thermister constant BK and the specific resistance value R Kfl at 273K that satisfy the relation BXR l0,000KQ-K, and a metal, said metal being highly anti-corrosive and having high electric conductivity, attached thereto.
  • the equation (2) is not always applicable to any temperature range, but this invention relates to R and B in the temperature range which the equation 2) is applicable to.
  • FIG. 1 is a plan view of a preferred embodiment of this invention.
  • FIG. 2 shows a section view thereof.
  • FIG. 3 shows a volbampere characteristic suitable for a non-linear resistor.
  • FIG. 4 shows a volt-ampere characteristic unsuitable for a non-linear resistor.
  • the oxide semiconductors as one component of the contact resistance element of this invention which have negative resistance and also possess such a specific resistance R KQ at 273K and a thermister constant BK that satisfy the relation BXR IOKQ'K are preferably sintered bodies of the mixtures such as iron oxide and copper oxide, cobalt oxide and nickel oxide.
  • iron oxide and titanium oxide and the rest, and the metals or alloys as another component thereof which are highly anti-corrosive and have high electric conductivity are preferably such metals as copper, Zinc, nickel etc., or such alloys as brass. phosphor bronze, German silver etc. Therefore, the components of the contact resistance element of this invention are both inexpensive in cost. n I
  • FIG. 1 shows a plan view of a preferred embodiment of this invention.
  • FIG. 2 is a section view thereof.
  • the invention provides a contact resistance element. as shown in FIG. l-and FIG. 2, manufactured easily by making small holes in the oxide sintered body I, attaching the metal or alloy pieces 2, 2 to the oxide sintered body 1 through the small holes and fixing the whole with a suitable insulating coating material 3 such as epoxy resin.
  • the contact resistance element of this invention has such a remarkably stable volt-ampere characteristic as shown in FIG. 3, proving to be suitable for a non-linear resistor.
  • This invention as described hereinabove. provides a contact resistance element which is inexpensive in both raw material cost and manufacturing cost and can be made to be small-sized without lowering the remarkably stable characteristic thereof, consequently it is industrially of great value.
  • EXAMPLE 7 The sintered body is prepared by a conventional technique.
  • the starting material in the composition defined in Table l is respectively mixed in a pot mill so as to produce a homogeneous mixture.
  • the mixture is dried in a dryer, pressed ina mold at a pressure of about 1,000kg/cm into a disc of 10mm in diameter and lmm in thickness.
  • the molded disc is sintered in air at above l,0OC, thus the sintered disc 1 is obtained.
  • a contact resistance element is manufactured, as shown in FIG. 1, by making two small holes of about lmm in diameter in the sintered disc 1, attaching the copper pieces 2, 2 to the sintered disc 1 through the two small holes respectively and fixing the whole with epoxy resin 3.
  • the resistance R thereof is high at the low voltage and the current varies as the voltage increases as shown in FIG. 3.
  • the measured values of R, R and a of the contact resistance element are shown in Table 1. Further, the values of the resistance R KO. and thermister constant BK of the sintered body I measured in a conventional manner are also shown in Table I, together with those of R XB.
  • the values of R B of the sintered bodies l-lV are all not more than l0,00()KO-K.
  • the contact resistance elements manufactured, as shown in FIG. I, by using these sintered bodies show all the remarkably stable volt-ampere characteristics as shown in FIG. 3, thus proving to be suitable for a non-linear resistor.
  • the sintered bodies are prepared in the same manner as the above mentioned example from the starting materials in the composition defined in Table 3.
  • the measured values of R B and R are also shown in Table 2.
  • the values of R XB of the sintered bodies V-Vlll are all larger than 10,000Q-K.
  • the contact resistance elements manufactured by attaching the copper pieces to the sintered bodies in the same manner as the above mentioned example show all the unstable volt-ampere characteristics as shown in FIG. 4, thus proving to be unsuitable for a non-linear resistor.
  • An oxide semiconductor-metal contact resistance element comprising a disk-like oxide semiconductor having a surface barrier resistance, said oxide semiconductor having negative resistance and also possessing a specific resistance value R KQ at 273K and a thermister constant BK that satisfy the relation R XB l0,000KQ-K, and two pieces of metal brought in direct and fixed contact therewith respectively, said metal being highly anticorrosive and having high electric conductivity.
US362461A 1972-06-22 1973-05-21 Oxide semiconductor-metal contact resistance elements Expired - Lifetime US3906425A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP47062588A JPS525995B2 (de) 1972-06-22 1972-06-22

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US3906425A true US3906425A (en) 1975-09-16

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US362461A Expired - Lifetime US3906425A (en) 1972-06-22 1973-05-21 Oxide semiconductor-metal contact resistance elements

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US (1) US3906425A (de)
JP (1) JPS525995B2 (de)
DE (1) DE2326896C3 (de)
FR (1) FR2189836B1 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5889308A (en) * 1996-08-09 1999-03-30 Hyundai Electronics Industries Co., Ltd. Semiconductor device having an electrostatic discharging protection circuit using a non-ohmic material

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50128162A (de) * 1974-03-29 1975-10-08
JPS5593772U (de) * 1978-12-25 1980-06-28
JPH0339024A (ja) * 1989-07-05 1991-02-20 Hidetake Hirai 活魚用水槽
CN110287503B (zh) * 2019-01-28 2022-12-02 国网湖北省电力有限公司电力科学研究院 一种基于matlab的分析避雷器伏安特性的方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2027277A (en) * 1929-08-16 1936-01-07 Habann Erich Contact device
US2590894A (en) * 1949-09-20 1952-04-01 Paul H Sanborn Electrical conductor
US3105800A (en) * 1960-02-15 1963-10-01 Watanabe Toshio Method of manufacturing a negative temperature coefficient resistance element
US3310766A (en) * 1965-07-14 1967-03-21 Bourns Inc Electrical resistance device
US3393448A (en) * 1965-12-22 1968-07-23 Owens Illinois Inc Method for making thermistors
US3511786A (en) * 1967-08-22 1970-05-12 Du Pont Strontium titanate-ferrate thermistor compositions

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA567939A (en) * 1955-05-27 1958-12-23 R. Roup Rolland Electrical circuit elements
US3150342A (en) * 1960-02-10 1964-09-22 Morganite Resistors Ltd Non-linear resistors

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2027277A (en) * 1929-08-16 1936-01-07 Habann Erich Contact device
US2590894A (en) * 1949-09-20 1952-04-01 Paul H Sanborn Electrical conductor
US3105800A (en) * 1960-02-15 1963-10-01 Watanabe Toshio Method of manufacturing a negative temperature coefficient resistance element
US3310766A (en) * 1965-07-14 1967-03-21 Bourns Inc Electrical resistance device
US3393448A (en) * 1965-12-22 1968-07-23 Owens Illinois Inc Method for making thermistors
US3511786A (en) * 1967-08-22 1970-05-12 Du Pont Strontium titanate-ferrate thermistor compositions

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5889308A (en) * 1996-08-09 1999-03-30 Hyundai Electronics Industries Co., Ltd. Semiconductor device having an electrostatic discharging protection circuit using a non-ohmic material

Also Published As

Publication number Publication date
DE2326896A1 (de) 1974-01-17
JPS525995B2 (de) 1977-02-18
DE2326896B2 (de) 1977-07-14
DE2326896C3 (de) 1979-07-26
FR2189836A1 (de) 1974-01-25
FR2189836B1 (de) 1977-12-30
JPS4921689A (de) 1974-02-26

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