US3902181A - Reproducing system employing an electron tube as a charge recording tube - Google Patents
Reproducing system employing an electron tube as a charge recording tube Download PDFInfo
- Publication number
- US3902181A US3902181A US326291A US32629173A US3902181A US 3902181 A US3902181 A US 3902181A US 326291 A US326291 A US 326291A US 32629173 A US32629173 A US 32629173A US 3902181 A US3902181 A US 3902181A
- Authority
- US
- United States
- Prior art keywords
- window
- gas discharge
- sheet
- outer electrode
- tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000010894 electron beam technology Methods 0.000 claims abstract description 28
- 239000004065 semiconductor Substances 0.000 claims abstract description 20
- 230000005684 electric field Effects 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 14
- 239000011248 coating agent Substances 0.000 claims description 13
- 238000000576 coating method Methods 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 13
- 239000004020 conductor Substances 0.000 claims description 9
- 239000011810 insulating material Substances 0.000 claims description 5
- 229910052785 arsenic Inorganic materials 0.000 claims description 3
- 230000003252 repetitive effect Effects 0.000 claims description 3
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 claims description 3
- 230000000903 blocking effect Effects 0.000 claims description 2
- 239000002210 silicon-based material Substances 0.000 claims description 2
- 239000002800 charge carrier Substances 0.000 description 10
- 230000033458 reproduction Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910001385 heavy metal Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000010791 quenching Methods 0.000 description 2
- LSIXBBPOJBJQHN-UHFFFAOYSA-N 2,3-Dimethylbicyclo[2.2.1]hept-2-ene Chemical compound C1CC2C(C)=C(C)C1C2 LSIXBBPOJBJQHN-UHFFFAOYSA-N 0.000 description 1
- 235000012571 Ficus glomerata Nutrition 0.000 description 1
- 240000000365 Ficus racemosa Species 0.000 description 1
- 235000015125 Sterculia urens Nutrition 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- CRQQGFGUEAVUIL-UHFFFAOYSA-N chlorothalonil Chemical compound ClC1=C(Cl)C(C#N)=C(Cl)C(C#N)=C1Cl CRQQGFGUEAVUIL-UHFFFAOYSA-N 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J31/00—Cathode ray tubes; Electron beam tubes
- H01J31/02—Cathode ray tubes; Electron beam tubes having one or more output electrodes which may be impacted selectively by the ray or beam, and onto, from, or over which the ray or beam may be deflected or de-focused
- H01J31/06—Cathode ray tubes; Electron beam tubes having one or more output electrodes which may be impacted selectively by the ray or beam, and onto, from, or over which the ray or beam may be deflected or de-focused with more than two output electrodes, e.g. for multiple switching or counting
- H01J31/065—Cathode ray tubes; Electron beam tubes having one or more output electrodes which may be impacted selectively by the ray or beam, and onto, from, or over which the ray or beam may be deflected or de-focused with more than two output electrodes, e.g. for multiple switching or counting for electrography or electrophotography, for transferring a charge pattern through the faceplate
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G15/00—Apparatus for electrographic processes using a charge pattern
- G03G15/22—Apparatus for electrographic processes using a charge pattern involving the combination of more than one step according to groups G03G13/02 - G03G13/20
- G03G15/32—Apparatus for electrographic processes using a charge pattern involving the combination of more than one step according to groups G03G13/02 - G03G13/20 in which the charge pattern is formed dotwise, e.g. by a thermal head
- G03G15/321—Apparatus for electrographic processes using a charge pattern involving the combination of more than one step according to groups G03G13/02 - G03G13/20 in which the charge pattern is formed dotwise, e.g. by a thermal head by charge transfer onto the recording material in accordance with the image
Definitions
- a reproduction system has an electron tube for generating a beam of electrons which are accelerated toward a semiconducting or insulating window provided in a wall of the tube.
- the window is coated on its inner side with a conducting layer, and an electric field is established between the conducting layer of the semiconductor and an outer electrode spaced from the window outside the tube.
- a gas discharge between the outer electrode and the window is con trolled by the electron beam, to apply a charge to a paper web in the space between the window and the outer electrode.
- the present invention relates to recording apparatus and more particularly to apparatus employing an electron tube for producing a gas discharge to record a charge pattern on untreated paper.
- a tube with a Lenard window is employed. having a very thin metal or mica window, through which the electron beam may effectively reach the outside of the tube with substantially its entire energy. This electron beam can place a charge on the paper web directly.
- Another system employs a so-called indirect window, which is constructed of a thin sheet of a heavy metal, applied on both sides of a normal window which is transparent to X-radiation.
- the electron beam which is directed toward the inner sheet, is converted into X-rays which penetrate the main part of the window, and they are then absorbed in the outer sheet of heavy metal where they are converted into electrons which are employed to place a charge on the paper web.
- Another object of the present invention is to provide such a system for use with apparatus for electrostatic copying of images onto an unprepared paper web, to obtain the direct continuous reproduction of such images.
- a window constructed in the manner of an indirect window, consisting essentially of a selfsupporting sheet of insulating or semiconducting material, the inner surface of which is provided with a conductive layer, the insulating properties of the semiconducting sheet being sufticiently great that the positive charge applied thereto by a gas discharge is maintained for at least the time required to record an individual image.
- the present invention is based on the recognition that when an insulator or a semiconducting sheet is bombarded by electrons the impinging electrons produce up to 1,000 or more charge carrier pairs for each impinging electron, depending upon its intrinsic energy.
- an electric field is established across the thickness of the semiconducting sheet and across a space outside the semiconducting sheet, the field gradient in the space is insufficient to support a gas discharge.
- the field gradient within the sheet is reduced and that in the space is raised to produce a gas discharge in the space, placing a charge pattern on a paper web within the space in accordance with the pattern formed on the sheet by the beam. It is not necessary for the paper web to contact the semiconducting sheet.
- the amplifying effect of the semiconducting sheet is producing multiple charge carrier pairs for each electron striking the shect, greatly amplifies the charge applied to the paper web.
- FIG. I is a schematic view of an electron tube incorporating an illustrative embodiment of the present invcntion',
- FIG. 2 is a cross-section, on an enlarged scale, of the portion of the apparatus similar to that shown in FIG. 1, but incorporating an alternative embodiment of the present invention.
- FIG. 3 is an enlarged view ofa portion of the apparatus illustrated in FIG. 2, as viewed in the direction III.
- FIG. 1 illustrates an electron tube 2 constructed in the manner of a cathode ray tube, and adapted to produce a relatively narrow electron beam 20 which is swept across the face of the tube 2 in a regular rectan gular array by deflection means, in the manner well known to those skilled in the art.
- the face of the tube illustrated in the lower portion of FIG. I, comprises a self-supporting sheet 3 formed of insulating material, or semiconducting material, and the inner surface of the sheet 3 is provided with a mctalic conductive coating 5.
- the coating is connected via a terminal 23 to an external source of negative voltage.
- the outer surface 4 of the sheet 3 is exposed to the atmosphere, and a space 26 is defined between the sheet 3 and an outer electrode 13 spaced therefrom and formed of a sheet of conductive material oriented generally parallel to the sheet 3.
- the electrode 13 is connected to a source of positive electric potential, in order to establish an electric field between the conductive layer 5 and the electrode 13.
- the gradient of this field is normally higher in the sheet 3 than in the space 26, because of the relatively high resistivity of the semiconducting material of which the sheet 3 is formed.
- the outer surface 4 of the conductive sheet 3 becomes positively charged, and holds the field gradient in the space 26 below the level at which a gas discharge can occur.
- the cathode ray tube 2 is operated by controlling the potential on the control grid in such a way as to cause the beam 20 to be modulated in intensity in accordance with the information desired to be reproduced or copied, as it scans the surface of the sheet 3.
- the tube 2 may be provided with a photo cathode exposed to light derived from the image to be reproduced by optical scanning of the image in synchronism with the scanning of the sheet 3 by the beam 20.
- the resistivity of the sheet 3 is sufficiently high that the positive charges applied to the surface 4 as the result of the gas discharge are maintained for the time duration of the recording process of the individual image. This time duration is the interval required for the beam to move away from the location of the gas discharge.
- the charge carrier pairs recombine within the sheet 3, at a decay rate which is a constant of the material of which the window is formed. This rate is sufficiently rapid that the charge carrier pairs produced by the Ebic effect decay substantially to zero by the time required for the electron beam 20 to complete a cycle of its scanning.
- FIG. 2 shows in cross section a portion ofthe apparatus provided at the face of a cathode ray tube 27.
- the semiconducting sheet 3 of the tube 2 is replaced by a sheet of p-conductive silicon substrate 10, and the sheet has an inner surface 11 which is rendered conductivc by means of a mctalic coating or the like.
- This conductive layer is connected to a source of negative potential at a terminal 23, just as in FIG. 1.
- the outer surface of the sheet 10 is provided with a perforated insulating oxide coating 6 having apertures 7 which is preferably formed of SiO Diodes 8 are formed at the locations of the apertures 7 by diffusing n-conductive material through the apertures 7, of the layer 10 in the vicinity of the opening 6 within small end material. Due to the depletion zones formed in the vicinity of the pn junctions 9, a high value of insulation is provided for each diode so that a potential difference up to approxi mately 2,000 volts can be maintained across the sheet 10 without substantial conduction.
- the lower surface of the sheet 10 charges positive sufficiently to prevent a gas discharge in the space 26.
- the electrons of the electron beam 20, which is controlled in the same manner as the beam of the tube 2, produce charge carrier pairs, including electrons 21 which diffuse toward the outer surface of the sheet 10 and the result is an increase in the field gradient across the space 26.
- the increase in the gradient results in a gas discharge in the space 26, between one of the apertures 7 and the electrode 13, which discharge continues until the lower surface of the sheet 10 again becomes positively charged, thereby quenching the gas discharge.
- the duration of the gas discharge during the recording process is extremely short, and its specific duration depends on the effective capacity of one of the diodes 8, and on the magnitude of the gas discharge current.
- the electron beam is aligned with one of the apertures 7 for only a relatively short time, which may be on the order of 10 to 10 seconds, and it is desirable to make the duration of the gas discharge approximately equal to the time interval during which the beam is aligned with a single diode 9 or aperture 7.
- the duration of the gas discharge is slightly longer than the interval during which the beam is aligned with a diode.
- the shape of the window formed by the sheet 10 is preferably an elongate rectangle or slit, as shown in FIG. 3, and in one embodiment has a width 22 just sufficient to accommodate a single scanning line.
- the line preferably extends across the width of the paper web 12, so that movement of the web 12 from the supply roll 24 to the take-up roll 25 moves the window along the length of the web, scanning the entire surface thereof.
- the apertures 7 which are formed in the oxide coating 6 are illustrated in phantom form in FIG. 3, and are preferably longitudinal holes oriented in such a way as to have their major dimensions perpendicular to the width dimension 22.
- the apertures 7 are approximately 0.006 mm in width, and a length which suffices to cover a gap with 22 of approximately .03 mm.
- the shape of the holes 7 illustrated in FIG. 3 is particularly advantageous for a narrow width 22 so that one line is recorded on the web 12 at a time. If, however, several lines are to be recorded simultaneously by means of the present invention, employing a wider window, a circular shape for the apertures 7 is more advantageous.
- the apparatus illustrated in FIGS. 2 and 3 is more effective than the so-called pin tube described above. in that a more linear relation is obtained between the intensity of the gas discharge produced. and the intensity of the electron beam.
- the window of the present invention can be formed with the apertures 7 in a much more regular fashion. and with greater image resolution than can be achieved by the use of the pin tube construction.
- the outer surface of the present invention is entirely smooth in the embodiment of FIG. 1, and substantially smooth in the embodiments of FIGS. 2 and 3. being interrupted in the latter only by the apertures 7 in the oxide coating 6. As the coating 6 is only approximately 0.001 mm thick. it does not present the difficulties resulting from field inhomogeneities en countered with sharp and uneven pin edges.
- the semiconducting sheet 3 in the embodiment of FIG. 1 may be formed of any insulating or semicon ducting material. including semiconductive glass material. providing that it has a sufficiently high resistivity in the dark state. i.e.. when not exposed to the electron beam.
- the resistivity is preferably at least 10 ohm cm. and may be formed of glass containing Te. As or Ge.
- the sheet 10 in the embodiment of FIGS. 2 and 3 is preferably formed of silicon. doped with p-conductive material. Alternatively. a compound formed of elements from columns lll and V of the periodic table. or even from columns ll and Vl. may be chosen. as long as the resistivity is sufficient.
- the sheets 3 and 10 in the embodiments of FIGS. 1-3 are preferably formed so as to avoid the formation of socalled traps which are effective to capture. at least breifly. the charge carriers formed by the action of the electron beam.
- the number of traps is preferably as small as possible. and when traps are present in the material. they are such as to capture charge carriers for no longer than 10" seconds.
- Materials which have been found to be suitable are semiconductors with relatively large energy gaps. Examples of such semiconductors, with their energy gaps (where known) expressed in electron volts are; SiC (3.0). GaN (3.5). GaP (2.24). PbO. ZnO (3.2). ZnS (3.6) and ZnSe.
- the sheets 3 and 10 formed with any of these semi conductor materials are formed in such a way that the compounds are as homopolar as possible. in order to permit the charge carriers to move easily within the sheet. through the part thereof which is not directly exposed to the electron beam.
- n-conduetive semiconducting material such as n-conductive silicon is preferred.
- the thickness of the sheet forming the window in the present invention is selected to be approximately 0.03 mm to 0.15 mm.
- the construction of the remainder of the tubes 2 and 27 depends upon whether an optical pattern and photo cathode is used, or whether a succession of electric signals is used. to originate the image.
- a method of producing a charge image on an untreated paper web employing a cathode ray tube having a window formed of insulating material having a conductive inner surface and having an electrode disposed on the inner surface of said window, comprising the steps of applying a potential difference between the conductive inner surface of said window and an outer electrode spaced from said window, to produce a potential gradient across said window and across the space between said window and said outer electrode, said field being normally below the value required to sustain a gas discharge, placing said web in said space. and scanning the inner surface of said window with an electron beam to reduce the potential gradient within said window and to cause a gas discharge in said space.
- ln recording apparatus employing a cathode ray tube for controlling a gas discharge in a space adjacent to the exterior of a window in said tube for application of an electrostatic charge to a paper web.
- the combination comprising. a window disposed in the face of said tube in position to be scanned by an electron beam generated within said tube.
- said window being formed of a sheet of semiconducting material having a conductive inner surface. an outer electrode spaced from the exterior of said Window. a paper web being disposed in the space between said window and said outer electrode. and means for establishing an electric field between said conductive inner surface and said outer electrode. the gradient of said field being normally below the value required to sustain a gas discharge.
- said sheet having a relatively large resistivity so that a charge applied to the exterior surface of said window by said gas discharge is maintained there at least for the duration required to form a charge image on said paper web by said gas discharge.
- said window comprises a highly insulating semiconducting material with a resistivity of at least ohm centimeters. and is provided with a conductive coating on its inner surface.
- said semiconducting material includes a component se lected from the group containing Te, As and Ge.
- said window comprises a sheet of p-conductive silicon material, and including an oxide coating applied to the outer surface of said sheet, said oxide coating having a plurality of apertures therein, and a layer of n-conductive material applied to the outer surface of said sheet through each of said apertures.
- Apparatus according to claim 10 wherein said apertures are approximately 0.006 mm wide, and said window is approximately 0.030 mm wide.
- diodes are formed at the junctions of said p-conductive material and said n-conductive material, said diodes having a blocking voltage of at least 2,000 volts.
- Apparatus according to claim 14 including means for connecting said inner surface to a source of negative potential and means connecting said outer electrode to a source of positive potential.
- Apparatus according to claim 6, whcrein said window comprises a highly insulating semiconductor material having a relatively large energy gap.
- Apparatus according to claim 16 wherein said material has an energy gap of not less than 2.24 electron volts.
- Apparatus according to claim 16 wherein said material is selected from the group containing SiC GaN, GaP, PbO, ZnO, ZnS, and ZnSe.
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Printers Or Recording Devices Using Electromagnetic And Radiation Means (AREA)
- Photoreceptors In Electrophotography (AREA)
- Electrophotography Using Other Than Carlson'S Method (AREA)
- Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2204077A DE2204077A1 (de) | 1972-01-28 | 1972-01-28 | Reprographie-vorrichtung mit einer elektronenroehre als ladungsschreibroehre |
DE2300771A DE2300771A1 (de) | 1972-01-28 | 1973-01-08 | Reprographie-vorrichtung mit einer elektronenroehre als ladungsschreibroehre |
Publications (1)
Publication Number | Publication Date |
---|---|
US3902181A true US3902181A (en) | 1975-08-26 |
Family
ID=25762631
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US326291A Expired - Lifetime US3902181A (en) | 1972-01-28 | 1973-01-24 | Reproducing system employing an electron tube as a charge recording tube |
Country Status (3)
Country | Link |
---|---|
US (1) | US3902181A (de) |
DE (2) | DE2204077A1 (de) |
FR (1) | FR2169584A5 (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5376955A (en) * | 1989-11-29 | 1994-12-27 | Dai Nippon Printing Co., Ltd. | Electrostatic charge information reproducing method with charge transfer by electrostatic discharge |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4150395A (en) * | 1977-09-26 | 1979-04-17 | Rca Corporation | Time base error correction system |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2996573A (en) * | 1957-05-13 | 1961-08-15 | Dick Co Ab | Television projection system employing electrostatic printing |
US3001849A (en) * | 1958-07-15 | 1961-09-26 | Xerox Corp | Apparatus for electrostatic recording |
US3182299A (en) * | 1962-03-21 | 1965-05-04 | Charles R Weidman | Electron beam scanning semiconductor magnetic tape readout device |
US3217330A (en) * | 1960-08-29 | 1965-11-09 | Xerox Corp | Electrostatic printing utilizing printthrough recording |
US3440476A (en) * | 1967-06-12 | 1969-04-22 | Bell Telephone Labor Inc | Electron beam storage device employing hole multiplication and diffusion |
US3445715A (en) * | 1965-10-12 | 1969-05-20 | Thomas W Dombeck | Information storage apparatus |
US3458752A (en) * | 1965-04-02 | 1969-07-29 | Burroughs Corp | Method and apparatus for improving the performance of electrostatic printing tubes |
US3653064A (en) * | 1968-02-25 | 1972-03-28 | Canon Kk | Electrostatic image-forming apparatus and process |
US3673599A (en) * | 1969-08-01 | 1972-06-27 | Sharp Kk | Electrostatic printing apparatus |
US3757351A (en) * | 1971-01-04 | 1973-09-04 | Corning Glass Works | High speed electostatic printing tube using a microchannel plate |
-
1972
- 1972-01-28 DE DE2204077A patent/DE2204077A1/de active Pending
- 1972-12-21 FR FR7245654A patent/FR2169584A5/fr not_active Expired
-
1973
- 1973-01-08 DE DE2300771A patent/DE2300771A1/de active Pending
- 1973-01-24 US US326291A patent/US3902181A/en not_active Expired - Lifetime
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2996573A (en) * | 1957-05-13 | 1961-08-15 | Dick Co Ab | Television projection system employing electrostatic printing |
US3001849A (en) * | 1958-07-15 | 1961-09-26 | Xerox Corp | Apparatus for electrostatic recording |
US3217330A (en) * | 1960-08-29 | 1965-11-09 | Xerox Corp | Electrostatic printing utilizing printthrough recording |
US3182299A (en) * | 1962-03-21 | 1965-05-04 | Charles R Weidman | Electron beam scanning semiconductor magnetic tape readout device |
US3458752A (en) * | 1965-04-02 | 1969-07-29 | Burroughs Corp | Method and apparatus for improving the performance of electrostatic printing tubes |
US3445715A (en) * | 1965-10-12 | 1969-05-20 | Thomas W Dombeck | Information storage apparatus |
US3440476A (en) * | 1967-06-12 | 1969-04-22 | Bell Telephone Labor Inc | Electron beam storage device employing hole multiplication and diffusion |
US3653064A (en) * | 1968-02-25 | 1972-03-28 | Canon Kk | Electrostatic image-forming apparatus and process |
US3673599A (en) * | 1969-08-01 | 1972-06-27 | Sharp Kk | Electrostatic printing apparatus |
US3757351A (en) * | 1971-01-04 | 1973-09-04 | Corning Glass Works | High speed electostatic printing tube using a microchannel plate |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5376955A (en) * | 1989-11-29 | 1994-12-27 | Dai Nippon Printing Co., Ltd. | Electrostatic charge information reproducing method with charge transfer by electrostatic discharge |
US5739834A (en) * | 1989-11-29 | 1998-04-14 | Dai Nippon Printing Co., Ltd. | Electrostatic charge information reproducing method |
Also Published As
Publication number | Publication date |
---|---|
DE2300771A1 (de) | 1974-07-11 |
DE2204077A1 (de) | 1973-08-09 |
FR2169584A5 (de) | 1973-09-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US3548233A (en) | Charge storage device with pn junction diode array target having semiconductor contact pads | |
US4213192A (en) | Electron beam accessed read-write-erase random access memory | |
US3440477A (en) | Multiple readout electron beam device | |
GB2109156A (en) | Cathode-ray device and semiconductor cathodes | |
GB1351421A (en) | Electron beam addressable semiconductor memory | |
DE1762403A1 (de) | Elektronenstrahl-Speichereinrichtung unter Verwendung von Loecher-Multiplikation und Diffusion | |
US3585439A (en) | A camera tube with porous switching layer | |
US3631294A (en) | Electronic storage tube utilizing a target comprising both silicon and silicon dioxide areas | |
US3401294A (en) | Storage tube | |
US3046431A (en) | Storage system | |
US3391022A (en) | Photoconductive layer and method of making the same | |
US3983574A (en) | Semiconductor devices having surface state control | |
US3902181A (en) | Reproducing system employing an electron tube as a charge recording tube | |
US3668473A (en) | Photosensitive semi-conductor device | |
US2617058A (en) | Television transmitting tube | |
US2788466A (en) | Direct-viewing storage tube | |
US3403278A (en) | Camera tube target including n-type semiconductor having higher concentration of deep donors than shallow donors | |
US3020442A (en) | Photoconductive target | |
US4025814A (en) | Television camera tube having channeled photosensitive target spaced from signal electrode | |
US2927234A (en) | Photoconductive image intensifier | |
US3268764A (en) | Radiation sensitive device | |
US3561964A (en) | Method for production of solid state storage panels | |
US3646391A (en) | Image-transducing storage tube | |
US3885189A (en) | Cathode ray tube monoscope with semiconductor target | |
US3904911A (en) | Light-sensitive target for vidicon picture tube |