US3893876A - Method and apparatus of the continuous preparation of epitaxial layers of semiconducting III-V compounds from vapor phase - Google Patents

Method and apparatus of the continuous preparation of epitaxial layers of semiconducting III-V compounds from vapor phase Download PDF

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US3893876A
US3893876A US285379A US28537972A US3893876A US 3893876 A US3893876 A US 3893876A US 285379 A US285379 A US 285379A US 28537972 A US28537972 A US 28537972A US 3893876 A US3893876 A US 3893876A
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gas mixture
compound semiconductor
gas
substrates
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Shin-Ichi Akai
Makoto Hayashi
Shin-Ichi Iguchi
Takashi Shimoda
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Sumitomo Electric Industries Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/065—Gp III-V generic compounds-processing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/067—Graded energy gap
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/072—Heterojunctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/936—Graded energy gap

Definitions

  • ABSTRACT This invention relates to a method for the continuous preparation of epitaxial layers of semiconducting III-V compounds on suitable substrates of the single crystal from a gas mixture thereof.
  • the plurality of substrates are moved in parallel with the flow of said gas mixture in a reaction furnace which is given a temperature gradient in the same direction as the flow of said gas mixture, the temperature decreasing with distance in the direction of the gas flow.
  • the semiconducting compounds are effectively recovered as epitaxial layers on the substrates, and the composition of the mixed crystal of Ill-V semiconductors can be changed continuously to result in the graded composition, without timewise changing the composition of said gas mixture.
  • the gas mixture entering into the reaction furnace is of constant composition, the composition of the gas mixture is gradually changed downstream of the gas flow in the reaction furnace as a result of effective recovery of the semiconducting compounds on the substrates.
  • This invention relates to a method of continuously preparing on a lIl-V semiconductor substrate the epitaxial layers of one of the lll-V semiconductors which include Ill-V binary semiconductors consisting of a Ill-B element of the Periodic Table and a VB element (for example, GaAs, GaP, lnP, etc.) and especially their mixed crystals (for example, InAs P GaAs P ln, ,Ga,P, etc. where .r l).
  • the continuous vapor growth method was suggested already in the past with respect to Si and Ge.
  • a method of continuously growing epitaxial layers of Si from a gas mixture of hydrogen and SiCl is described in Japaneses Patent Publication No. SHO-43/5564 by the present applicant.
  • Another patent publication, Japanese Patent Publication No.SHO-43/2l369 reveals a method wherein epitaxial layers of Si are continuously prepared from a gas mixture of hydrogen and SiCl while the continuous growth of the epitaxial layers expedited by the formation of an oxide film on the surface of the epitaxially grown silicon layer from CO gas.
  • III-V semiconductors but also other compound semiconductors at large are unlike Si and Ge. They consist of two or more elements. Since control is required to maintain a stoichiometric ratio during the growth of these semiconductors, the continuous growth of the epitaxial layers of these compound semiconductor is very difficult and is seldom accomplished.
  • the growth of epitaxial layers of llI-V semiconductors is generally carried out by a batch process, which is not continuous. For example, there are the following reports.
  • Japanese Publication No. SHO-42/7492 A Method of Manufacturing Epitaxial Films, describes a method of depositing an epitaxial film having a graded energy gap of lll-V mixed crystal, wherein a gas mixture similar to that of the above (1) is used and the composition of two kinds of reacting gases of the same group of the Periodic Table is changed timewise by changing the flow rate of the afore-mentioned hydrogen gas or the temperature of the afore-mentioned source or storage tank, to thereby grow an epitaxial film having a graded energy gap.
  • the description also refers to a batch process. It is impossible to continuously grow an epitaxial film while changing the composition of the reacting gases timewise by this method. It is inevitable that a batch process must be adopted which is discontinuous or semi-continuous.
  • a characteristic of this invention is that in the method of growing an epitaxial layer of a 111 V ternary compound semiconductor represented by a general formula AB C on a 111 V binary compound semiconductor from a gas mixture, wherein AB C stands for both A'B" .C” and B' ,C',.A", A' being a Ill-B element, A" a V-B element, B and C" two different V-B elements, 8' and C' two different Ill-B elements and the value of x between 0 and 1, the value of x is continuously changed to result in the graded composition without changing timewise the composition of said gas mixture entering into the reaction furnace, which is given a temperature gradient, decreasing with distance in the direction of the gas flow, by continuously moving the plurality of said lll-V binary compound semiconductor substrates, upstream of said gas flow in the case of the substrate which has a lower melting point, and downstream of said gas flow in the case of the substrate which has a higher melting point than said ternary compound semiconductor, respectively.
  • the binary compound semiconductor AB has a lower melting point than the semiconductor AC, the composition of the gas mixture in the reaction furnace is richer in the constituent C and poorer in the constituent B in the higher temperature zone and vice versa in the lower temperature zone of the reaction furnace. If the semiconductor AB has a higher melting point than the semiconductor AC, the change of the composition of the gas mixture is reversed.
  • GaP N there are GaP N, l AlAs l- GaAs P lnAs P (0 l for the foregoing three), Ga Al As P ln Ga As P, (0 1, 0 v 1 for the foregoing two), GaSb ,As lnSb As, (0 l for the foregoing two), InSb Bi (0 x 1),In Ga,N, Ga Al P, In1.I- Al P, In Ga P, Ga B As, Ga Al As, In l-xAl As, In Ga As, Ga AI Sb, In Al Sb, In Ga Sb (0 x 1 for the foregoing eleven), etc.
  • the gas mixture is produced from various reaction products of many known gas systems such as an H2/AsCl /PCl /Ga, an H2/Asl-1 /PH /HCl/Ga, an
  • H /AsCl /PCl /GaAs an H2/AsCl /PCl /GaAs/GaP and so on.
  • the figure is a vertical cross section of an example of the continuous epitaxial growth furnace for lIl-V semiconductors used for the present invention.
  • 1 denotes the horizontal vapor phase reaction chamber
  • 2 and 3 the resistance heating furnaces for heating the horizontal vapor phase reaction chamber 1 and giving it a temperature gradient in the horizontal direction
  • 4 a gas mixture of a carrier gas, at least one volatile compound of a lIl-B element and at least one element or compound selected from among the V-B elements and their volatile compounds
  • 5 the exhaust gas.
  • the gas mixture 4 is, for example, composed of a hydrogen gas, Ga CPI- AsH,-, and PH, to heat the mixing zone 7.
  • 8 and 9 denote a preheater and afterheater respectively.
  • Each of these heating furnaces 2, 3, 8, and 9 is of a split type.
  • 10 denotes a fused quartz reaction tube, 11 a plate of carbon or quartz for the purpose of transporting the substrate 12 for epitaxial growth into the horizontal reaction chamber 1, and 13 and 14 two flows hydrogen gas. Two flows of gas are introduced into the reaction chamber 1 through the slits l5 and 16 above the substrates, and is discharged together with the exhaust gas 5.
  • 17 and 18 denote the slits which serve to separate the flow of hydrogen gas from inert gases 19 and 20 (for example, Ar, N etc.) which are exhausted to the inlet and outlet 21 and 22 respectively through which the substrates are transferred to 23 and 24 into clean benches (not shown in the drawing).
  • inert gases 19 and 20 for example, Ar, N etc.
  • the arrow 25 indicates the direction of movement of the plate 11, but the movement may be reversed.
  • the characteristic features of the continuous epitaxial growth furnace shown in the figure are that the shower of an inert gas (19, 23 and 20, 24) prevents the outer atmosphere from finding its way into the quartz reaction tube 10 and the slits 17 and 18 prevent the hydrogen gas 13, 14 from flowing out to the outlet and inlet 21 and 22 and that the hydrogen gas introduced in through the slits l5 and 16 is exhausted together with the exhaust gas 5, so that the gas mixture 4 flows only in the horizontal vapor phase reaction chamber 1 and does not get in contact with substrates 12-1 being sent into said reaction chamber 1 and substrates 12-2 sent out from said reaction chamber 1.
  • the resistance furnace 2 shall have a temperature which is about uniform (though the temperature of the left part is slightly higher) and the heating furnace 3 shall have a temperature gradient that the temperature is higher in the left.
  • a very small quantity of HCl gas may be added to hydrogen gas 14.
  • EXAMPLE 1 This example relates to a method of continuously growing epitaxial layers of GaAs.
  • the continuous epitaxial growth furnace shown in the figure was used.
  • the substrate 12 was used a wafer having a face of the crystallographic plane cut from n-type GaAs grown by the horizontal Bridgeman method.
  • the substrate was doped with Te of approximately 1 X l0 cm and was chemically etched after mirror polishing.
  • the region of the electric furnace 2 was kept at 755C 750C, and the region of the electric furnace 3 at 750C 730C.
  • the region of the electric furnace 3 was given a temperature gradient of 1- 2C per cm. The temperature gradient is decreasing with distance in the direction of the gas flow in the region of the electric furnaces 2 and 3.
  • the gas mixture 4 used was the reaction product of hydrogen saturated with AsCl and Ga placed at 850C.
  • the temperature of the gas mixing zone 7 was controlled at 800 900C.
  • the basic parameters for epitaxial growth i.e., the proportions of the components in the gas mixtures, the working range of the flow rates of the gas mixtures, the pressures of the various gas streams, etc., were similar to the prior art reference (lV).
  • the speed of movement of the substrate 12 was about 5 cm/hour in the direction of the arrow 25
  • the thickness of the epitaxial layer in the epitaxial wafer sent out one after another to the left of the growth furnace shown in the figure was l5p. +l,u..
  • the electron concentration of the surface layer of the grown layers was approximately I X l0 cm and it changed to approximately 3 X 10 cm as it progressed further into the interior. This may be due to the change of an identified impurity concentration.
  • the growth layers of the epitaxial wafer prepared by the continuous epitaxial growth have a uniform thickness and that there is little difference between those on different substrates. If the growth furnace shown in the figure is used and only one piece of substrate l2-3 is placed in the region of the furnace 3 in the reaction chamber 1 to be grown there without moving, other substrates b eingremoved that is to say, if grown by a batch process then GaAs is deposited on the inner wall of the quartz tube between the substrate 12-3 and the mixing zone 7, namely the region of the electric furnace 2 and the region of the electric furnace 3 on the left side of the substrate 12-3. If the gas is then stopped and the substrate 12-3 is taken out, and the next batch, i.e.
  • GaAs which would have been deposited on the inner wall of the quartz tube as mentioned above is instead effectively recovered on the GaAs substrate 12 by continuous epitaxial growth according to this invention.
  • the aforementioned loss is consequently reduced and besides the rate of growth does not vary timewise.
  • the rate of growth somewhat changes depending on the positon of the substrate as it moves on, all the substrates undergo the same growth course in the continuous epitaxial growth, so that epitaxial wafers of little scatter in quality are obtained. It is also permissible to place dummy wafers on the slate 11 at the time the movement is started and recover GaAs on the dummy wafers instead of depositing it on the inner wall of the quartz tube.
  • EXAMPLE 2 In place of Ga in Example 1, GaAs with an electron concentration of about 1 X lO cm at 300K was used. As the gas mixture 4, the reaction product of hydrogen saturated with AsCl and GaAs held at 850C was used. The other conditions were the same as in Example I. In this case, too, epitaxial layers of the n-type GaAs could be grown continuously without any difficulty.
  • Epitaxial layers of the p-type GaAs can easily be obtained by using GaAs doped with Zn in place of Ga.
  • Continuous epitaxial growth of GaAs P, (0 x l can be effected by adding a gas such as P or PH or PCL, in-the gas mixture of the afore-mentioned Examples' l and 2.
  • EXAMPLE 3 This example relates to a method of continuously growing epitaxial layers of GaAs P on the 111) face of the n-type GaP.
  • the concentration of Te in the sub strates was approximately '5 x 10 cm.
  • direction of movement of the substrates 12 was opposite to the direction of the arrow 25.
  • the region of the electric furnace 2 was kept at 885C 820C
  • the region of the electric furnace 3 was kept at 820C 815C
  • the region of the electric furnace was given a temperature gradient of 3 10C per cm. The temperature gradient is decreasing with distance in the direction of the gas flow in the region of the electric furnaces 2 and 3.
  • the mixture of the reaction product of H ,AsCl /GaAs, the reaction product of H /Pcl /GaP, and the gas mixture of H /H Se was used.
  • the temperatures of the GaAs source and 6a? source were about 800C and 900C, respectively.
  • the temperature of the gas mixing zone was controlled'at 900950C.
  • the speed of movement of substrates 12 was about 10 cm/hour in the opposite direction to the direction of the arrow 25.
  • the basic parameters for epitaxial growth were similar to the prior art reference (IV).
  • the ratio of As and P in the gas mixture was kept at about 6:4, and the temperature and the flow rate of hydrogen gas were always kept constant.
  • the epitaxial layers obtained consisted of a layer of about 25p of GaAs P, in which the value of changed continuously from the proximity of l to approximately 0.4 and a layer of about 45p.
  • the gas mixture entering into the reaction furnace is of constant composition, that is, the ratio of As and P in the gas mixture is kept at about 6:4, the composition of the gas mixture in the reaction furnace is richer in the constituents of the binary Ill-V semiconductor of the higher melting point, i.e., P at the higher temperature and poorer at the lower temperature, because the GaAs P, crystal with the value of in the proximity of l is deposited at the higher temperatures such as 885C, that is, the crystal which is much richer in GaP is effectively deposited from the gas mixture wherein the ratio of As and P is about 6:4 in the left part of the furnace 2, and as a result, the content of P is changed at the lower temperature.
  • Example 3 epitaxial layers of GaAs P in which the value of x was varied continuously were continuously grown without timewise changing the ratio of As and P in the gas mixture 4 in the figure.
  • GaAs was taken up as an example of Ill-V binary semiconductors and GaAs P r as an example of llI-V mixed crystal semiconductors.
  • the method of this invention is by no means limited to these lll-V semiconductors. It can continuously grow epitaxial layers of the aforementioned various Ill-V semiconductors on the aforementioned various substrates. That is to say, the combination of the gas mixture 4, temperature gradient of the electric furnace 2 or 3 and the direction of movement of the substrates 12 shown in the figure will make this method easily applicable to the continuous epitaxial growth of many other Ill-V semiconductors.
  • substrates 12 Ge and Si may also be used instead of Ill-V semiconductors. g f.
  • a method for the continuous preparation of the epitaxial layers of a lII-V temary'compound semiconductor represented by a general formula AB C on a llI-V binary compound semiconductor from a gas mixture wherein AB C stands for both A CH C" and B', ,.C"' -A", A' and A" being a "1-8 element and a V-B element, respectively, and B' and C' and B" and C" being two different lll-B elements and V-B elements, respectively, and the value of .r being between and 1, wherein said Ill-V ternary compound semiconductor with a graded composition is grown without changing timewise the composition of said gas mixture entering into the reaction furnace.
  • said lll-V ternary compound semiconductor is GaAs P, and GaP is utilized for said lll-V binary compound semiconductor substrate.
  • a method as claimed in claim 2 which is characterized in that said gas mixture is produced from the reaction products of a hydrogen gas saturated with AsC1 with GaAs and the reaction products of a hydrogen gas saturated with PCI with GaP.
  • a method as claimed in claim 1 which is characterized in that dummy wafers are placed in the reaction furnace before the movement of said substrates is started, thereby effectively depositing said ternary compound semiconductor on said wafers.

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US285379A 1971-09-06 1972-08-31 Method and apparatus of the continuous preparation of epitaxial layers of semiconducting III-V compounds from vapor phase Expired - Lifetime US3893876A (en)

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Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4010045A (en) * 1973-12-13 1977-03-01 Ruehrwein Robert A Process for production of III-V compound crystals
US4048955A (en) * 1975-09-02 1977-09-20 Texas Instruments Incorporated Continuous chemical vapor deposition reactor
US4071383A (en) * 1975-05-14 1978-01-31 Matsushita Electric Industrial Co., Ltd. Process for fabrication of dielectric optical waveguide devices
US4116733A (en) * 1977-10-06 1978-09-26 Rca Corporation Vapor phase growth technique of III-V compounds utilizing a preheating step
US4171996A (en) * 1975-08-12 1979-10-23 Gosudarstvenny Nauchno-Issledovatelsky i Proektny Institut Redkonetallicheskoi Promyshlennosti "Giredmet" Fabrication of a heterogeneous semiconductor structure with composition gradient utilizing a gas phase transfer process
US4172756A (en) * 1976-02-06 1979-10-30 U.S. Philips Corporation Method for the accelerated growth from the gaseous phase of crystals, and products obtained in this manner
US4256052A (en) * 1979-10-02 1981-03-17 Rca Corp. Temperature gradient means in reactor tube of vapor deposition apparatus
US4449037A (en) * 1978-10-31 1984-05-15 Fujitsu Limited Method and apparatus for heating semiconductor wafers
US4462332A (en) * 1982-04-29 1984-07-31 Energy Conversion Devices, Inc. Magnetic gas gate
US4479455A (en) * 1983-03-14 1984-10-30 Energy Conversion Devices, Inc. Process gas introduction and channeling system to produce a profiled semiconductor layer
US4483736A (en) * 1981-03-24 1984-11-20 Mitsubishi Monsanto Chemical Co., Ltd. Method for producing a single crystal of a IIIb -Vb compound
US4625678A (en) * 1982-05-28 1986-12-02 Fujitsu Limited Apparatus for plasma chemical vapor deposition
US4699675A (en) * 1985-12-26 1987-10-13 Rca Corporation Vapor phase growth of III-V materials
US5037674A (en) * 1985-05-29 1991-08-06 The Furukawa Electric Co., Ltd. Method of chemically vapor depositing a thin film of GaAs
US5997588A (en) * 1995-10-13 1999-12-07 Advanced Semiconductor Materials America, Inc. Semiconductor processing system with gas curtain
US6010937A (en) * 1995-09-05 2000-01-04 Spire Corporation Reduction of dislocations in a heteroepitaxial semiconductor structure
EP1146140A1 (de) * 2000-04-10 2001-10-17 Air Products And Chemicals, Inc. Verfahren zur Ablagerung von Oxyden und Nitriden mit Zusammensetzungsgradienten
WO2002013245A1 (en) * 2000-08-04 2002-02-14 The Regents Of The University Of California Method of controlling stress in gallium nitride films deposited on substrates

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5624928A (en) * 1979-08-09 1981-03-10 Nippon Telegr & Teleph Corp <Ntt> Electrode forming method of semiconductor
JPS57193025A (en) * 1981-05-25 1982-11-27 Semiconductor Energy Lab Co Ltd Manufacture of film
JPS59128299A (ja) * 1983-01-10 1984-07-24 Nec Corp 燐化アルミニウム・インジウム単結晶の製造方法

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US2877138A (en) * 1956-05-18 1959-03-10 Ind Rayon Corp Method of heating a filament to produce a metal coating in a decomposable gas plating process
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US3441453A (en) * 1966-12-21 1969-04-29 Texas Instruments Inc Method for making graded composition mixed compound semiconductor materials
US3441454A (en) * 1965-10-29 1969-04-29 Westinghouse Electric Corp Method of fabricating a semiconductor by diffusion
US3572286A (en) * 1967-10-09 1971-03-23 Texaco Inc Controlled heating of filaments
US3672948A (en) * 1970-01-02 1972-06-27 Ibm Method for diffusion limited mass transport

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Publication number Priority date Publication date Assignee Title
US2853970A (en) * 1956-03-09 1958-09-30 Ohio Commw Eng Co Continuous gas plating apparatus under vacuum seal
US2877138A (en) * 1956-05-18 1959-03-10 Ind Rayon Corp Method of heating a filament to produce a metal coating in a decomposable gas plating process
US3341376A (en) * 1960-04-02 1967-09-12 Siemens Ag Method of producing crystalline semiconductor material on a dendritic substrate
US3314393A (en) * 1962-07-05 1967-04-18 Nippon Electric Co Vapor deposition device
US3441454A (en) * 1965-10-29 1969-04-29 Westinghouse Electric Corp Method of fabricating a semiconductor by diffusion
US3441453A (en) * 1966-12-21 1969-04-29 Texas Instruments Inc Method for making graded composition mixed compound semiconductor materials
US3572286A (en) * 1967-10-09 1971-03-23 Texaco Inc Controlled heating of filaments
US3672948A (en) * 1970-01-02 1972-06-27 Ibm Method for diffusion limited mass transport

Cited By (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4010045A (en) * 1973-12-13 1977-03-01 Ruehrwein Robert A Process for production of III-V compound crystals
US4071383A (en) * 1975-05-14 1978-01-31 Matsushita Electric Industrial Co., Ltd. Process for fabrication of dielectric optical waveguide devices
US4171996A (en) * 1975-08-12 1979-10-23 Gosudarstvenny Nauchno-Issledovatelsky i Proektny Institut Redkonetallicheskoi Promyshlennosti "Giredmet" Fabrication of a heterogeneous semiconductor structure with composition gradient utilizing a gas phase transfer process
US4048955A (en) * 1975-09-02 1977-09-20 Texas Instruments Incorporated Continuous chemical vapor deposition reactor
US4172756A (en) * 1976-02-06 1979-10-30 U.S. Philips Corporation Method for the accelerated growth from the gaseous phase of crystals, and products obtained in this manner
US4116733A (en) * 1977-10-06 1978-09-26 Rca Corporation Vapor phase growth technique of III-V compounds utilizing a preheating step
US4449037A (en) * 1978-10-31 1984-05-15 Fujitsu Limited Method and apparatus for heating semiconductor wafers
US4256052A (en) * 1979-10-02 1981-03-17 Rca Corp. Temperature gradient means in reactor tube of vapor deposition apparatus
US4483736A (en) * 1981-03-24 1984-11-20 Mitsubishi Monsanto Chemical Co., Ltd. Method for producing a single crystal of a IIIb -Vb compound
US4462332A (en) * 1982-04-29 1984-07-31 Energy Conversion Devices, Inc. Magnetic gas gate
US4625678A (en) * 1982-05-28 1986-12-02 Fujitsu Limited Apparatus for plasma chemical vapor deposition
US4479455A (en) * 1983-03-14 1984-10-30 Energy Conversion Devices, Inc. Process gas introduction and channeling system to produce a profiled semiconductor layer
US5037674A (en) * 1985-05-29 1991-08-06 The Furukawa Electric Co., Ltd. Method of chemically vapor depositing a thin film of GaAs
US4699675A (en) * 1985-12-26 1987-10-13 Rca Corporation Vapor phase growth of III-V materials
US6010937A (en) * 1995-09-05 2000-01-04 Spire Corporation Reduction of dislocations in a heteroepitaxial semiconductor structure
US5997588A (en) * 1995-10-13 1999-12-07 Advanced Semiconductor Materials America, Inc. Semiconductor processing system with gas curtain
EP1146140A1 (de) * 2000-04-10 2001-10-17 Air Products And Chemicals, Inc. Verfahren zur Ablagerung von Oxyden und Nitriden mit Zusammensetzungsgradienten
US6537613B1 (en) 2000-04-10 2003-03-25 Air Products And Chemicals, Inc. Process for metal metalloid oxides and nitrides with compositional gradients
WO2002013245A1 (en) * 2000-08-04 2002-02-14 The Regents Of The University Of California Method of controlling stress in gallium nitride films deposited on substrates
US7687888B2 (en) * 2000-08-04 2010-03-30 The Regents Of The University Of California Method of controlling stress in gallium nitride films deposited on substrates
US20110108886A1 (en) * 2000-08-04 2011-05-12 The Regents Of The University Of California Method of controlling stress in group-iii nitride films deposited on substrates
US8525230B2 (en) 2000-08-04 2013-09-03 The Regents Of The University Of California Field-effect transistor with compositionally graded nitride layer on a silicaon substrate
US9129977B2 (en) 2000-08-04 2015-09-08 The Regents Of The University Of California Method of controlling stress in group-III nitride films deposited on substrates
US9691712B2 (en) 2000-08-04 2017-06-27 The Regents Of The University Of California Method of controlling stress in group-III nitride films deposited on substrates

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