US3853740A - Target changer for sputtering by ionic bombardment - Google Patents

Target changer for sputtering by ionic bombardment Download PDF

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Publication number
US3853740A
US3853740A US00348018A US34801873A US3853740A US 3853740 A US3853740 A US 3853740A US 00348018 A US00348018 A US 00348018A US 34801873 A US34801873 A US 34801873A US 3853740 A US3853740 A US 3853740A
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United States
Prior art keywords
target
cover
support
sputtering
targets
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Expired - Lifetime
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US00348018A
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English (en)
Inventor
A Kunz
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Balzers Patent und Beteiligungs AG
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Balzers Patent und Beteiligungs AG
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting substrates others than wafers, e.g. chips

Definitions

  • ABSTRACT A target changer for positioning targets which are to be subjected to electronic sputtering by ionic bom
  • Forelgn Apphc anon Pnonty Data bardment comprises a movable support for carrying Nov. 23, 1972 Switzerland 17202/72 the target with a cover mounted on the Support by electrical insulation means and which comprises an [52] US. Cl. 204/298, 204/192 ion Shielding electrode which is capable of being [51] lift. C1 C230 15/00 charged with apositive potential relative to the target.
  • This invention relates in general to apparatus for exposing substances to sputtering by ionic bombardment and, in particular, to a new and useful target changer for positioning targets which are to be subjected to electronic sputtering by ions.
  • sputtering substances by ionic bombardment comprise a working chamber capable of being evacuated in which an ion beam generated by an ionic source and concentrated to a greater or lesser degree is directed against the surface of a substance to be sputtered, called a target.
  • the particles of the sputtered substance in general precipitate on so-called substrate, i.e., a glass plate which is intended to be coated wtith a corresponding layer.
  • substrate i.e., a glass plate which is intended to be coated wtith a corresponding layer.
  • Such changers usually include a rotatable support, for exam ple a turntable or a drum on which a plurality of targets are arranged and in each case one of them is brought into the path of the sputtering ion beam.
  • a fixed mask is commonly used which has an aperture for exposing the respective target to sputtering.
  • the known target changers have the disadvantage that during the changing, the sputtering ion beams of the accelerating voltage must be cut off in order to prevent an undesirable sputtering of the changer parts such as the parts supporting the target, for example, which during the change are temporarily below the exposure opening and could, therefore, be exposed to the action of the ion beam.
  • the necessity for repeated switching off and on affects the reliability of operation of the device.
  • the switching time of several seconds needed for the operation of the usual high voltage supply devices is a great economical cost.
  • a longer interruption of the coating process may also bring technological disadvantages insofar as the substrate and the targets may become covered in the interruption time by molecules of the residual gas.
  • the present invention provides a device for changing targets which are to be sputtered by ionic bombardment and which is constructed as a mobile support of a plurality of targets and includes a fixed mask having an aperture for exposing a target to be sputtered so that it does not have the disadvantages of the prior art.
  • target changer is constructed with a cover designed as an ion shielding electrode which is connected to and moves with the movable support but is electrically insulated from the support and capable of being charged to a potential which is positive with respect to the target.
  • the result of such a construction is that the targets can be changed without cutting off the operational voltage.
  • the cover moves with the target, a sputtering of the supporting parts particularly the target support itself, is avoided.
  • the construction is such that only the targets themselves can be sputtered as long as they remain within the range of the ion beam action.
  • a sputtering of the cover is not possible because during the operation the cover is provided with a positive potential equal or approximately equal to the anode potential so that relative to positive ions the cover acts as a shielding electrode.
  • the simplest arrangement is to connect the cover electrically with the anode and to apply the anode potential thereto. It is also possible, however, to insulate the cover electrically from the other parts of the device so that during operation within a-short time the positively charged ions initially striking the cover charge the cover positively until it reaches a potential sufficient to shield away the positive ions.
  • the device constructed in accordance with the invention may be designed to permit a continuous transition from the sputtering of a first target to the sputtering of a second target and thereby produce, for example coatings with a smooth change of components from layer to layer in a direction perpendicular to the surface. Because of the fact that during the target change the high voltage need not be cut off, the sputtering with the device according to the invention is particularly suited for automatic sputtering units producing thin coatings.
  • a target changer for positioning targets which are to be subjected to electronic sputtering by ions which comprises a movable support for carrying a target and with a cover overlaying the support but exposing a portion of the target thereon and insulated from the support, and wherein the cover comprises an ion shielding electrode capable of being charged with a positive potential relative to the target.
  • a further object of the invention is to provide a target changer for positioning targets for electronic sputtering by ions which is simple in design, rugged in construction and economical to manufacture.
  • FIG. 1a is a partial elevational and partial sectional view of a target changer constructed in accordance with the invention and taken along the line A-O-B of FIG. lb;
  • FIG. lb is atop plan view of the target changer shown in FIG. la;
  • FIG. 2 is a view similar to FIG. 1b of another embodiment of the invention.
  • FIG. 3 is a view similar to FIG; 1b of still another embodiment of the invention.
  • FIGS. 1a and 1b the invention embodied therein in FIGS. 1a and 1b comprises a target changer for use in sputtering objects by ionic bombard- 'ment.
  • the ionic bombardment is produced by a beam of positively charged ions indicated at 1 which is incident on a target 11 which is supported on a carrier or rotary support 7.
  • the target changer includes a cover 2 which is supported on the carrier 7 by means of electrical insulators 3 which hold the cover in spaced location above the carrier surface and secure it to the carrier for movement therewith.
  • the cover is capable of being charged with a positive potential relative to the target 11 which is to be subjected to sputtering to produce ionic bombardment.
  • the cover 2 is connected to a voltage lead 4 which is brought to a positive potential relative to the support 7 and the targets which are carried thereby.
  • the support 7 carries four separate targets 11,12,13 and 14 which are connected to a high voltage lead 5.
  • the support 7 forms a turntable which is rotated by a shaft 8 driving through a gear 9 which drives a gear 50 affixed to the turntable support 7.
  • the turntable is supported for rotation on an insulator ring 6.
  • a fixed mask 10 which has an aperture 16 is advantageously located above the cover 2 and the aperture 16 is located to expose the respective target which is to be sputtered in a particular operation.
  • FIG. 1b it is shown that four targets 11,12,13 and 14 can be arranged on the turntable so that in each case only one of them is aligned with the aperture 16 of the mask 10. In this way only one target is sputtered at a time.
  • the fixed mask 10 is needed particularly when sputtering is effected under higher gas pressures, for example, in a cathode sputtering unit only when there is a danger that the other targets arranged on the rotary support might be sputtered at the same time as the one which is exposed. It is also recommendable to use the fixed mask 10 in order to avoid any risk during the operation that particles of the bombarded target reach and thereby contaminate the surface of another target because of the straying of the residual gas present in the sputtering chamber.
  • the turntable 7 is supported in a protective housing 15 which comprises an upper part 15a and a lower part 15b with the insulator ring 6 held therebetween at flanged extensions of the upper and lower parts.
  • the housing provides a support for the voltage leads 4 and 5 as shown.
  • targets 11 to 14 are arranged in respect to an aperture 16 of a mask [0 so that two targets 11 and 12 are partially exposed in the case where it is desired to simultaneously sputter two different targets.
  • the ratio of the two sputtered portions of the targets is determined by the surface ratio of the two target surfaces which are in the exposed position below the aperture 16.
  • annular target 17 can be sputtered continuously when it is rotated uniformly or gradually about the ring axis.
  • the annular target may also be provided for a simultaneous sputtering of two different substances in any desired mixture ratio. If, for example, a portion of the annular target within the dotted circle 20, indicated in FIG.
  • any desired ratio of the portions to be sputtered which comprises different substances may be adjusted as is evident by the respective positioning of the annular target with respect to the aperture 16. It would also be possible to provide different segments of the ring half or quarter segments, for example, which contain different substances and thus to obtain a possibility of changing from the sputtering of one substance to the sputtering of another.
  • a turntable such as the turntable carrier 7 is provided as the rotary support of the targets.
  • a drum supporting the targets may be provided or even a slide, which may be moved together with the cover which is capable of being charged to a positive potential.
  • the arrangement may be operated with or without a mask 10 as the requirements dictate so that only the desired targets are submitted to sputtering.
  • the target changer of the invention can be used in any known arrangements for sputtering but ionic bombardment, for example in the known cathodic sputtering units. Its utilization has been proved particular in so-called triode sputtering units where the surface to be sputtered is placed in an electric arc discharge between a hot cathode and an anode and the sputtering ions are attracted from the plasma of the arc column by means of a negative high voltage applied to the targets.
  • the fixed mask of the target changer according to the invention can serve as an anode for the low voltage discharge while the rotating cover can be connected to the anode or kept at a floating potential (electrically insulated from all of the other parts) and thus be charged by itself positively during the operation.
  • a target changer for positioning targets which are to be subjected to cathode sputtering by ions comprising a movable support for carrying a target, a cover comprising an ion shielding electrode, means adapted to supply a positive potential to said cover relative to the target said cover overlying said support but expos ing at least a portion of the target thereon, electrical insulation means supporting said cover on said support, and mounting means for supporting said support for movement.
  • a target changer according to claim I wherein said movable support comprises a rotary table, means for rotating said table and a voltage lead connected to said cover.
  • a target changer including a housing with an upper part surrounding said table and said cover and a lower skirt portion, an insulating ring disposed between said upper part of said housing and said lower skirt portion and rotatably supporting said table for movement, and a high voltage terminal connected to said rotary table and the target thereon.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
US00348018A 1972-11-23 1973-04-05 Target changer for sputtering by ionic bombardment Expired - Lifetime US3853740A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH1720272A CH558428A (de) 1972-11-23 1972-11-23 Target-wechselvorrichtung fuer die zerstaeubung mittels ionen.

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US3853740A true US3853740A (en) 1974-12-10

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US (1) US3853740A (enExample)
CH (1) CH558428A (enExample)
FR (1) FR2208185B1 (enExample)
GB (1) GB1394942A (enExample)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4169031A (en) * 1978-01-13 1979-09-25 Polyohm, Inc. Magnetron sputter cathode assembly
US4239611A (en) * 1979-06-11 1980-12-16 Vac-Tec Systems, Inc. Magnetron sputtering devices
US4282924A (en) * 1979-03-16 1981-08-11 Varian Associates, Inc. Apparatus for mechanically clamping semiconductor wafer against pliable thermally conductive surface
US4816133A (en) * 1987-05-14 1989-03-28 Northrop Corporation Apparatus for preparing thin film optical coatings on substrates
DE4037580A1 (de) * 1989-11-29 1991-06-06 Hitachi Ltd Sputtervorrichtung sowie einrichtung und verfahren zum wechseln eines targets
DE4040856A1 (de) * 1990-12-20 1992-06-25 Leybold Ag Zerstaeubungsanlage
US6051113A (en) * 1998-04-27 2000-04-18 Cvc Products, Inc. Apparatus and method for multi-target physical-vapor deposition of a multi-layer material structure using target indexing
US20020175070A1 (en) * 2000-01-27 2002-11-28 Nikon Corporation Film formation method for compound material containing gaseous component element and sputtering apparatus
US6641702B2 (en) * 2000-09-26 2003-11-04 Data Storage Institute Sputtering device
US20050199487A1 (en) * 2004-02-27 2005-09-15 Nanofilm Technologies International Pte Ltd Continuous ARC deposition apparatus and method with multiple available targets
EP1448806A4 (en) * 2001-11-03 2006-11-08 Intevac Inc Method and apparatus for multi-target sputtering field of the invention

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4574733A (en) * 1982-09-16 1986-03-11 Energy Conversion Devices, Inc. Substrate shield for preventing the deposition of nonhomogeneous films
GB2213838A (en) * 1987-12-23 1989-08-23 Plessey Co Plc Environmental protection of superconducting thin films
GB2228948A (en) * 1989-02-28 1990-09-12 British Aerospace Fabrication of thin films from a composite target
DE19543375A1 (de) * 1995-11-21 1997-05-22 Leybold Ag Vorrichtung zum Beschichten von Substraten mittels Magnetronzerstäuben

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3528906A (en) * 1967-06-05 1970-09-15 Texas Instruments Inc Rf sputtering method and system
US3537973A (en) * 1967-09-15 1970-11-03 Varian Associates Sequential sputtering with movable targets

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3528906A (en) * 1967-06-05 1970-09-15 Texas Instruments Inc Rf sputtering method and system
US3537973A (en) * 1967-09-15 1970-11-03 Varian Associates Sequential sputtering with movable targets

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4169031A (en) * 1978-01-13 1979-09-25 Polyohm, Inc. Magnetron sputter cathode assembly
US4282924A (en) * 1979-03-16 1981-08-11 Varian Associates, Inc. Apparatus for mechanically clamping semiconductor wafer against pliable thermally conductive surface
US4239611A (en) * 1979-06-11 1980-12-16 Vac-Tec Systems, Inc. Magnetron sputtering devices
US4816133A (en) * 1987-05-14 1989-03-28 Northrop Corporation Apparatus for preparing thin film optical coatings on substrates
DE4037580A1 (de) * 1989-11-29 1991-06-06 Hitachi Ltd Sputtervorrichtung sowie einrichtung und verfahren zum wechseln eines targets
EP0492114A1 (de) 1990-12-20 1992-07-01 Leybold Aktiengesellschaft Zerstäubungsanlage
DE4040856A1 (de) * 1990-12-20 1992-06-25 Leybold Ag Zerstaeubungsanlage
US6051113A (en) * 1998-04-27 2000-04-18 Cvc Products, Inc. Apparatus and method for multi-target physical-vapor deposition of a multi-layer material structure using target indexing
US20020175070A1 (en) * 2000-01-27 2002-11-28 Nikon Corporation Film formation method for compound material containing gaseous component element and sputtering apparatus
US6641702B2 (en) * 2000-09-26 2003-11-04 Data Storage Institute Sputtering device
EP1448806A4 (en) * 2001-11-03 2006-11-08 Intevac Inc Method and apparatus for multi-target sputtering field of the invention
US20050199487A1 (en) * 2004-02-27 2005-09-15 Nanofilm Technologies International Pte Ltd Continuous ARC deposition apparatus and method with multiple available targets
US7871506B2 (en) * 2004-02-27 2011-01-18 Nanofilm Technologies International Pte Ltd Continuous ARC deposition apparatus and method with multiple available targets

Also Published As

Publication number Publication date
FR2208185B1 (enExample) 1977-02-04
FR2208185A1 (enExample) 1974-06-21
GB1394942A (en) 1975-05-21
CH558428A (de) 1975-01-31

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