US3819408A - Method for manufacturing vapor deposited electrode - Google Patents

Method for manufacturing vapor deposited electrode Download PDF

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Publication number
US3819408A
US3819408A US00238513A US23851372A US3819408A US 3819408 A US3819408 A US 3819408A US 00238513 A US00238513 A US 00238513A US 23851372 A US23851372 A US 23851372A US 3819408 A US3819408 A US 3819408A
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United States
Prior art keywords
vapor deposited
film
supporting film
thin
electrode
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Expired - Lifetime
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US00238513A
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English (en)
Inventor
R Toyonaga
E Hiruma
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Japan Broadcasting Corp
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Japan Broadcasting Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/12—Manufacture of electrodes or electrode systems of photo-emissive cathodes; of secondary-emission electrodes
    • H01J9/125—Manufacture of electrodes or electrode systems of photo-emissive cathodes; of secondary-emission electrodes of secondary emission electrodes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/32—Secondary emission electrodes

Definitions

  • ABSTRACT A method for manufacturing secondary emission electrode deposited on a thin supporting film by vacuum evaporation, wherein a rigid body is arranged adjacent to a surface of the thin film opposite to the vaporizing surface.
  • the opposite surfaces of the rigid body and the thin film may be arranged in parallel and at a distance, for example, about 0.05 mm or they may be so arranged to increase the distance at locations radially more distant from the central portion of the thin film.
  • An evaporating material is vapor deposited onto the supporting surface, thus a secondary emission electrode layer having a uniform thickness can be obtained.
  • the present invention relates to a methodiformanufacturing vapor deposited electrodes in which a porous electrode layer'is'formed ona1-thin" supporting film ina vacuum chamber by vaporization; Moreparticularly,
  • the present invention relates to amethod for manufacturing vapor deposited electrodes whichis able'to form a vapor deposited electrode layer having a substantially uniform thickness.
  • 10 represents a motor for driving the rotary supporting plate 4.
  • the vapor deposited layer 11 obtained by the above mentioned conventional method shown in FIG. 3i hasa disadvantage that the thickness of the obtainedlayeris not uniform and it has the most thin portion at center of the film 2 and becomesthicker from the centralportion toward the circumference of the filmv 2. or the metal frame 1. In some cases, there. will be the further disadvantage that no vapordeposited layer is formed on the central portion of the film 2.
  • vapour deposited layer having an uneven thickness is used as a secondary electron multiplier target for a secondary electron conduction type camera tube
  • the secondary electron gain, the dark current and the afterimage time are different in the central portion and in the surroundings of the vapor'deposited layer, so that an unevenness of sensibility is caused and it is difficult to operate the whole surface of thetarget in a: high gain; and further an improvement of performance of the camera tube cannot be expected.
  • F IG. 4 shows experimental results with respect to the ununiformity of the thicknes' of thevapor deposited layer: obtainedby the conventional method, wherein the. evaporating. material consisting of cryolite'magnesium oxide. (Na AlF 'MgO) is deposited on the signal electrode film consisting mainly of aluminium to form the secondary electron multiplierv target.
  • the. evaporating. material consisting of cryolite'magnesium oxide. (Na AlF 'MgO) is deposited on the signal electrode film consisting mainly of aluminium to form the secondary electron multiplierv target.
  • an' ordinate shows the thickness (am) of the.-:secondary electron multipliertarget, that is, the vapor 'depositedilayer, while. an-abscissa shows the distance (mm?) from one side of the circular signal electrode; film: having a diameter of l8 mm, i.e. the electrode supporting film.
  • sion loss of photoelectron increases as the supporting filmbecomes thicker, so that it is necessary to use a sufficiently thin supporting film.
  • the thermal conduction around the target supporting film is comparatively high because the circumference of the supporting film is provided with an annular rigid frame, while the thermal conduction in the central portion of the supporting film is low because at the central portion there is only a thin supporting film having a thickness of about 500 to 2,000 A. Therefore, the temperature rises at the central portion of the supporting film and the target material.
  • An object of the present invention is to provide a method for manufacturing vapor deposited electrodes
  • Another object of the present invention is to provide a method for the manufacture of secondary electron multiplier targets, in which a thin film working as a signal electrode is used as a supporting film and a vapor deposited layer consisting of a secondary emissive material can easily be formed thereon in a uniform thickness.
  • the present invention is fundamentally the improvement of the conventional method for manufacturing a vapor deposited layer on a supporting film by vapor deposition.
  • the present invention has been obtained based on the recognition of such production of unevenness of vapor deposited electrodes in the conventional method for manufacturing secondary electron multiplier target by vapor deposition as described above.
  • a rigid body having low gas discharging characteristics, such as copper or glass is arranged in close proximity of the back surface opposite to the vapor depositing surface of the signal electrode film and vapor deposition is carried out in this assembled state, whereby the vapor deposited layer can be formed to be thicker on the surface of the supporting film opposite to the area close to the rigid body in other portions.
  • the present invention provides a method for manufacturing vapor deposited electrode comprising steps of oppositely arranging an evaporation source for evaporating electrode material and a thin supporting film on the front surface of which said electrode is vapor deposited in an evaporating chamber, providing a back cover made of a rigid body in close proximity of the rear surface of the thin supporting film, evaporating said electrode material, and vapor depositing said evaporated electrode material onto said front surface of the thin supporting film to form a vapor deposited electrode.
  • the thickness of the vapor deposited layer can be varied depending upon the relative distance between the back cover and the thin supporting film.
  • the back cover in a proper form, vapor deposited layers having not only a uniform thickness but also any desired configuration can easily be obtained.
  • FIG. 1A is a front view showing an embodiment of a thin supporting film to have a vapor deposited layer formed thereon;
  • FIG. 1B is a cross-sectional view of the thin supporting film taken on the line X-X in FIG. 1A;
  • FIG. 2 is a perspective view of an evaporating apparatus used for practicing a conventional vapor deposition method
  • FIG. 3 is a crosssectional view illustrating a deposition state of a porous layer on the thin supporting film according to the conventional method
  • FIG. 4 is a graph showing a relation between the thickness of the thin supporting film and the thickness of the target layer (porous layer) deposited thereon according to the conventional method;
  • FIG. 5 is a cross-sectional view illustrating the deposition state of the porous layer according to the present invention.
  • FIG. 6 is a graph showing the variations of thickness of the porous target layer deposited on the thin supporting film having a thickness of 650 A according to the present method and the conventional method;
  • FIG. 7 is a cross-sectional view of an embodiment of a back cover used for illustrating the effect of the present invention.
  • FIG. 8 is a graph showing the thickness of the target layer (porous layer) obtained by using the back cover of FIG. 7;
  • FIG. 9 is a cross-sectional view of an embodiment of the back cover to be used in the present invention.
  • 1 represents an annular rigid supporting frame made of, for example, nichrome material and 2 represents an electroconductive metal film adhered to the supporting frame 1 in a stretched state by any well-known means.
  • a metal film consisting mainly of aluminium, or an alumina film formed by depositing aluminium on a signal electrode film, or an aluminium metal film reinforced with a net with small meshes may be used.
  • said thin supporting film 2, on which a vapor deposited layer is formed is retained in a stretched state with the supporting frame 1 as previously explained with respect to FIGS. 1A and 1B.
  • a rigid body 10 such as metal, glass or the like, used as a back cover is arranged in 'close proximity with the back surface opposite to the surface of the thin film 2 having the vapor deposited layer formed thereon.
  • This assembly (1, 2, 10) is placed on a fixed or rotary supporting plate 4 in a conventional evaporating apparatus as shown in FIG. 2.
  • the vapor depositing surface of the thin supporting film 2 is faced to an evaporating source for a target material 9 through holes provided in the supporting plate 4.
  • a sintered body consisting of cryolite (Na AlF and magnesium oxide (MgO) in a weight ratio of l 1 is, for example, used as an evaporating material and charged into the evaporating source 9.
  • a main valve 5 is opened and air in a bell jar 3 is exhaustd from an outlet 6. After evacuation of the bell jar 3 in high vacuum, the main valve 5 is closed, while an inlet valve 8 is opened and an inert gas such as argon or nitrogen is introduced into the bell jar 3 through an inlet 7.
  • the inlet valve 8 When the inside of the bell jar 3 reaches a pressure required for evaporation, for example, about 1 to 2 Torr, the inlet valve 8 is closed. Thereafter, an electric current is passed through a heater element of the evaporating source 9 for the target mate rial to raise the temperature, whereby the target material is evaporated and deposited to form a target layer 12 on the surface of the thin supporting film 2 facing the evaporating source 9 as shown in FIG. 5. In this case. the target layer 12 becomes porous because the evaporation is carried out in the inert gas atmosphere. In this figure, 13 represents a small aperture for escaping gas.
  • the thickness of the porous vapor deposited layer formed on the thin supporting film by the above mentioned method was measured at the central portion and Distance between target Thickness of target layer supporting film and back cover central portion circumference no back cover 6 am 25 um close proximity 20 pm 20 pm 0.1 mm 20 pm 20 pm 0.3 mm 20 pm 20 um 1.0 mm run 25 pm
  • the target layer can be deposited without unevenness of the thickness when the back cover is arranged in proximity or close to the back surface of the thin supporting film.
  • the distance between the back cover and the thin supporting film is adequately set in connection with the position of the thin supporting film, it is easy to vary the thickness of the vapor deposited layer having desired uniformity.
  • FIG. 6 shows a result measured with respect to the thickness of the vapor deposited layer formed on the thin supporting film of 650 A. thick.
  • a curved line denoted by symbol 0 is the case of the conventional method and that of symbol x is the caseof the present invention.
  • the vapor deposited layer having a uniform thickness can be easily formed according to the present invention using the back cover, while in the conventional method the central portion and thecircumference of the vapor deposited layer are considerably different in thickness and it is impossible to obtain a vapor deposited layer having a satisfactorily uniform thickness.
  • the central portion of the back cover 14 is provided with an aperture having a diameter of 3 mm or 6 mm as shown in FIG. 7. Then, a vapor deposited electrodelayer is manufactured by usingthe perforated backcover 14 in the same manner as described above exceptthatthe distance between the back cover and the. thin supporting film is 0.1 mm. The thickness of the thus vapor depos+ ited electrode layer was measured to obtain a result as shown in FIG. 8.
  • an ordinate is the thickness of thevapor deposited electrode layer
  • an abscissa is the distance from one side of the vapor deposited electrode supporting film having a diameter of 18 mm.
  • a curved line of symbol 0 shows a result obtained by using the back cover with the aperture of 3 mm dia.
  • that of symbol x shows a result obtained by using the back cover with the aperture of 6 mm dia.
  • thetarget layer deposited on the supporting film corresponding to thearea of theaperture is thinner than that corresponding to the area of the back-cover. Namely, it can be seen that when using the back'cover according to the present invention, the deposition amount at the central portion, which is apt to be lacking in the conventional method, may easily be increased and consequently unevenness of the thickness in the vapor deposited layer can be eliminated.
  • the present invention is not intended to be limited to the above mentioned embodiments, and it will be understood by those skilled in the art that many modifications and variations thereof may be employed without departing. from the scope of the invention.
  • the back cover may be made in a convex form so that the central portion is located closer to the said thin supporting film than the circumference thereof as shown in FIG. 9.
  • evaporation treatment is carried out in the same manner as described above, while arranging the center distance between the back cover and the thin supporting film to be 0.1 mm and to be 1 mm at the circumference, the obtained thickness of the vapor deposited-electrode layer is 20 pm at the central portion and 18 pm at the circumference thereof.
  • a target electrode layer having the same pattern to that of the back cover, the thickness of which is varied according to the pattern can easily be obtained.
  • the present invention lies in that the vapor deposited layer having uniform thickness or any desired shape can easily be obtained by arranging the back cover in proximity with the thin supporting film to be provided with a deposition layer and applying the vapor deposition.
  • a light absorption layer having a unifonn thickness for example, a black aluminium layer, is deposited on the surface opposite to the vapor depositing surface of the target electrode supporting film in an inert gas atmosphere according to the present invention, and then the target electrode layer is formed on the deposition surface of the supporting film as described above.
  • a light absorption layer having a unifonn thickness for example, a black aluminium layer
  • the black aluminium layer can be easily formed because it deposits the evaporating material on the portion of the thin supporting film adjacent to the back cover as previously explained.
  • the present invention is applicable to a method of manufacturing vapor deposited electrode layers required for various purposes in uniform thickness on the supporting thin film.
  • the present invention by arranging back cover in the proximity or close to the thin supporting film, deposition of the evaporating material on the undesirable side of the thin supporting film is prevented, and at the same time even if the thin supporting film is very thin, the vapor deposited layer having desirable uniform thickness can be deposited on the desired side of the thin supporting film.
  • a porous layer is to be used as a target layer, such target electrodes having excellent properties in secondary electron gain, dark current, afterimage time and the like can be obtained.
  • a method for manufacturing a vapor deposited porous electrode layer comprising:
  • a back cover comprising a rigid body spaced adjacent the rear side of said supporting film at a distance of less than about 0.3 mm in an evaporator

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Light Receiving Elements (AREA)
  • Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)
  • Cold Cathode And The Manufacture (AREA)
US00238513A 1971-05-27 1972-03-27 Method for manufacturing vapor deposited electrode Expired - Lifetime US3819408A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP46036498A JPS5036127B1 (enExample) 1971-05-27 1971-05-27

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JP (1) JPS5036127B1 (enExample)
GB (1) GB1378678A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4510989A (en) * 1981-03-23 1985-04-16 Mayer Frederic C Production of metal rods
CN107988576A (zh) * 2017-11-30 2018-05-04 西安交通大学 一种氧化镁金属陶瓷二次电子发射薄膜及其制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2527747A (en) * 1946-01-03 1950-10-31 Margaret N Lewis Apparatus for coating articles by thermal evaporation
US3100723A (en) * 1960-08-29 1963-08-13 Ibm Process of making multi-layer devices
US3326717A (en) * 1962-12-10 1967-06-20 Ibm Circuit fabrication
US3636919A (en) * 1969-12-02 1972-01-25 Univ Ohio State Apparatus for growing films

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2527747A (en) * 1946-01-03 1950-10-31 Margaret N Lewis Apparatus for coating articles by thermal evaporation
US3100723A (en) * 1960-08-29 1963-08-13 Ibm Process of making multi-layer devices
US3326717A (en) * 1962-12-10 1967-06-20 Ibm Circuit fabrication
US3636919A (en) * 1969-12-02 1972-01-25 Univ Ohio State Apparatus for growing films

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4510989A (en) * 1981-03-23 1985-04-16 Mayer Frederic C Production of metal rods
CN107988576A (zh) * 2017-11-30 2018-05-04 西安交通大学 一种氧化镁金属陶瓷二次电子发射薄膜及其制备方法

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Publication number Publication date
GB1378678A (en) 1974-12-27
JPS5036127B1 (enExample) 1975-11-21

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