US3805114A - Voltage-nonlinear resistors - Google Patents

Voltage-nonlinear resistors Download PDF

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Publication number
US3805114A
US3805114A US00335423A US33542373A US3805114A US 3805114 A US3805114 A US 3805114A US 00335423 A US00335423 A US 00335423A US 33542373 A US33542373 A US 33542373A US 3805114 A US3805114 A US 3805114A
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United States
Prior art keywords
mole percent
oxide
voltage
sintered body
value
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Expired - Lifetime
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US00335423A
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English (en)
Inventor
M Matsuoka
T Masuyama
Y Kobayashi
H Oda
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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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Filing date
Publication date
Priority claimed from JP47021815A external-priority patent/JPS5140949B2/ja
Priority claimed from JP47021819A external-priority patent/JPS5140953B2/ja
Priority claimed from JP47021817A external-priority patent/JPS5140951B2/ja
Priority claimed from JP47021820A external-priority patent/JPS5140954B2/ja
Priority claimed from JP47021814A external-priority patent/JPS5140948B2/ja
Priority claimed from JP47021818A external-priority patent/JPS5140952B2/ja
Priority claimed from JP47021816A external-priority patent/JPS5140950B2/ja
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Application granted granted Critical
Publication of US3805114A publication Critical patent/US3805114A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/105—Varistor cores
    • H01C7/108—Metal oxide
    • H01C7/112—ZnO type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01T—SPARK GAPS; OVERVOLTAGE ARRESTERS USING SPARK GAPS; SPARKING PLUGS; CORONA DEVICES; GENERATING IONS TO BE INTRODUCED INTO NON-ENCLOSED GASES
    • H01T1/00—Details of spark gaps
    • H01T1/16—Series resistor structurally associated with spark gap

Definitions

  • a voltage-nonlinear resistor has a sintered body of a composition comprising as a main constituent, zinc oxide (ZnO) and, as an additive, 0.1 to 3.0 mole percent of bismuth oxide (B1203), 0.05 to 3.0 mole percent of antimony oxide (Sb O and 0.1 to 3.0 mole percent of cobalt fluoride (CoF Electrodes are applied to opposite surfaces of the sintered body.
  • ZnO zinc oxide
  • B1203 bismuth oxide
  • SB O antimony oxide
  • CoF Electrodes are applied to opposite surfaces of the sintered body.
  • the invention relates to voltage-nonlinear resistors having nonohmic resistance due to the bulk thereof and more particularly to varistors, which are available for characteristic elements of lightning arresters, comprising zinc oxide, bismuth oxide, antimony oxide and cobalt fluoride.
  • n (V/C)" where V is the voltage across the resistor, I is the current flowing through the resistor, C is a constant corresponding to the voltage at a given current and exponent n is a numerical value greater than 1. The value of n is calculated by the following equation:
  • n glo (l2/ 1)/ g1o a/ 1) where V and V -are the voltages at given currents I and 1 respectively.
  • the desired value of C depends upon the kind of application to which the resistor is to be put. It is ordinarily desirable that the value of n be as large as possible since this exponent determines the extent to which the resistors depart from ohmic characteristics.
  • n-value defined by I,, I V, and V as shown in equation (2) is expressed by n for distinguishing from the n-value calculated by other currents or voltages.
  • Nonlinear resistors comprising sintered bodies of zinc oxide with or without additives and non-ohmic electrode applied thereto, have already been disclosed as seen in U; S. Pat. Nos. 3,496,512, 3,570,002 and 3,503,029.
  • the nonlinearity of such varistors is attributed to the interface between the sintered body of zinc oxide with or without additives and the silver paint electrode and is controlled mainly by changing the compositions of said sintered body and silver paint electrode. Therefore, it is not easy to control the C- value over a wide range after the sintered body is prepared.
  • varistors comprising germanium or silicon p-n junction diodes
  • the silicon carbide varistors have nonlinearity due to the contacts among the individual grains of silicon carbide bonded together by a ceramic binding material, i.e., to the bulk, and the C-value is controlled by changing a dimension in the direction in which the current flows through the varistors.
  • the silicon carbide varistors have high surge resistance which is available as characteristic elements of lightning arresters. The characteristic elements are used usually by connecting in series with discharging gaps and determine the level of the discharging voltage and the follow current.
  • the silicon carbide varistors however, have a relatively low n-value ranging from three to seven which results in poor suppression of lightning surge or increase in the follow current.
  • Another defect of the arrester including the discharging gaps as its components is not to respond instantaneously surge voltage having very short rise time such as below lus. It is desirable for the arrester to suppress the lightning surge and the follow current to the level as low as possible and respond surge voltage instantaneously.
  • voltagenonlinear resistors of bulk type comprising a sintered body of zinc oxide with additives comprising bismuth oxide and antimony oxide and/or cobalt oxide, as seen in U. S. Pat. No. 3,663,458.
  • These zinc oxide varistors of bulk type are controllable in a C-value by changing the distance between electrodes and have an excellent nonlinear property in an n-value more than 10 in a region of current below than l0A/cm For a current more than l0A/cm however, the n-value goes down to a value below than 10.
  • the power dissipation for surge energy shows a relatively low value compared with that of the conventional silicon carbide arrester, so that the change rate of C-value exceeds 20 percent after two standard lightning surges of 4 l0p.s wave form in a peak current of 1,500A/cm are applied to said zinc oxide varistor of bulk type.
  • Another zinc oxide varistor of bulk type which contains as an additive cobalt fluoride as seen in U. S. Pat. No. 3,642,664.
  • This varistor shows an excellent nonlinear property, but an essentially weak point as an arrester element is its weakness for surge pulse. The nonlinear property of the varistor deteriorates easily even for l00Ap/cm of surge pulse.
  • An object of the present invention is to provide a voltage-nonlinear resistor having nonlinearity due to the bulk thereof and being characterized by a high nvalue even in a range of current more than l0A/cm
  • Another object of the present invention is to provide a voltage-nonlinear resistor having high power dissipation for surge energy.
  • Another object of the present invention is to provide 7 an arrester characterized by high suppression for lightning surge and low follow current.
  • FIG. 1 is a partly cross-sectional view through a voltage-nonlinear resistor in accordance with the invention and FIG. 2 and FIG. 3 partly cross-sectional views through an arrester in accordance with the invention.
  • reference character 10 designates, as a whole, a voltage-nonlinear resistor comprising, as its active element, a sintered body having a pair of electrodes 2 and 3 applied to opposite surfaces thereof.
  • Said sintered body 1 is prepared in a manner hereinafter set forth.
  • Wire leads 5 and 6 are attached conductively to the electrodes 2 and 3, respectively, by a connection means 4 as solder or the like.
  • a voltage-nonlinear resistor according to the invention comprises a sintered body of a composition comprising, as an additive, 0.1 to 3.0 mole percent of bismuth oxide (Bi O 0.05 to 3.0 mole percent of antimony oxide (Sb O and 0.1 to 3.0 mole percent of cobalt fluoride (CoF and the remainder of zinc oxide (ZnO) as a main constituent, and electrodes applied to opposite surfaces of said sintered body.
  • a voltagenonlinear resistor has non-ohmic resistance due to the bulk itself. Therefore, its C-value can be changed without impairing the n-value by changing the distance between said opposite surfaces.
  • said resistor has high n-value in a region of current -m r the," IRA swish?-heheeki i y f r are: 29. 35
  • the higher n-value in a region of current more than l0A/cm can be obtained when said sintered body further includes one member selected from the group consisting of 0.1 to 3.0 mole percent of cobalt oxide (C00) and 0.1 to 3.0 mole percent of manganese oxide
  • the resistor is remarkably improved in the n-value in a regin of current more than A/cm and the stability for surge pulse when said sintered body consists essentially of 99.4 to 72 mole percent of zinc oxide (ZnO) and, as an additive,
  • the sintered body 1 can be prepared by a per se well known ceramic technique.
  • the starting materials in the compositions in the foregoing description are mixed in a wet mill so as to produce homogeneous mixtures.
  • the mixtures are dried and pressed in a mold into desired shapes at a pressure from l(g./cm to 500 Kg./cm
  • the pressed bodies are sintered in air at 1,000 to 1,450 C for 1 to 10 hours, and then furnace-cooled to room temperature (about 15 C to about 30 C).
  • the mixtures can be preliminarily calcined at 700 to l,000 C and pulverized for easy fabrication in the subsequent pressing step.
  • the mixture to be pressed can be admixed with a suitable binder such as water, polyvinyl alcohol, etc.
  • the sintered body be lapped at the opposite surfaces by abrasive powder such as silicon carbide in a particle size of 50p. in mean diameter to 10p. in mean diameter.
  • abrasive powder such as silicon carbide in a particle size of 50p. in mean diameter to 10p. in mean diameter.
  • the sintered bodies are provided, at the opposite surfaces thereof with electrodes in any available and suitable method such as silver painting, vacuum evaporation or flame spraying of r et l such as Al, Zn, Snetc V V.
  • the voltage-nonlinear properties are not practically affected by the kinds of electrodes used, but are affected by the thickness of the sintered bodies. Particularly, the C-value varies in proportion to the thickness of the sintered bodies, while the n-value is almost independent of the thickness. This surely means that the voltage-nonlinear property is due to the bulk itself, but not to the electrodes, i
  • Electrode wires can be attached to the electrodes in a per se conventional manner by using conventional solder. It is convenient to employ a conductive adhesive comprising silver powder and resin in an organic solvent in order to connect the lead wires to the electrodes.
  • Voltage-nonlinear resistors according to this invention have mgr stafiimyfiern paaim and fo r tlie surge test, which is carried out by applying lightning surge determined by the J EC (Japanese Electrotechnical Committee)-l56 Standard. The n-value and C-value do not change remarkably after heating cycles and surge test.
  • FIG. 2 is the cross-sectional view of an arrester wherein reference character 20 designates, as a whole, an ars? sszmrrisinaens was a emen insauesis:
  • Said arrester elements are connected inseries with one or more discharging gaps 12, spring 13 and line terminals 14 and 15. Said arrester elements are enveloped into wet- ,process porcelain 16. Said arrester is kept to the level age-nonlinear property of the sintered body is attributed to the sintered body inself.
  • FIG. 3 is the cross-sectional view of another arrester wherein reference character 30 designates, as a whole, an ar- 'r C n Sinuring rester comprising at least one voltage-nonlinear resistor 10". (m
  • inltlul 20) 1900 is 120m, 5m according to this invention.
  • reference characters identical to those of FIG. 10 950 is l20()"(.. 5m 5 472 is [200%, SHr 2 have been employed to designate like elements.
  • the initial (20) 750 5 350%.. Hr arrester of FIG. 3 18 characterized, in its construction, 1320 15 1 mg, m to be without discharging gap and, in its electrical prop- 15 :2 is erty, to have response time shorter than 0.1;zs for high initial 2500 6 1, surge having very sharp rise in addition to its excellent I5 1880 17 1000: C, 10Hr properties in follow current and surge dissipation.
  • Presg 38 ently preferred illustrative embodiments of the invention are as follows. 20
  • Example 2 x p 1 v Ir Zinc oxide incorporated with bismuth oxide, antimony oxide, and cobalt fluoride in a composition of Table 2 is fabricated into the voltage-nonlinear resis- Starting material composed of 98.0 mole percent of tors by the same process as that of Example 1.
  • the zmc mode, 0.5 mole percent of bismuth oxide, 1.0 mole thickness is 20 mm.
  • the resulting electrical properties percent of antimony oxide, and 0.5 mole percent of 00- are shown in Table 2, in whichthe values of n, and n TABLE 2 Electrical properties of Additives (mol. resultant resistor Change rates after test 1 c (at n 0.1- n 100- B1203 Sb O cor2 1 mA) 1 mA) 1000 A) AC An, An
  • balt fluoride is mixed in a wet mill for 24 hours.
  • The are the n-values defined between 0.1mA and lmA, and mixture is dried and pressed in a mold into discsof' between 100 and 1,000A, respectively.
  • the impulse 40mm in diameter and 25mm in thickness at a pressure test is carried out by applying two impulses of 4 10p.s, t999il eaabsea i y unssrstqq lbw om ne addition of bisr'nuth oxide, antimony oxide, and cobalt
  • the pressed bodies are sintered in air at the condition shown in Table 1, and then furnace-cooled to room temperature.
  • the sintered body is lapped at the opposite surfaces thereof into the thickness shown in Table 1 by silicon carbide abrasive in particle size of 30p. in mean diameter.
  • the opposite surfaces of the sintered body are provided with a spray metallized film of alu- 'Pinum in eusstsez sllkn n @bl ia -h change rates.
  • Example 4 Zinc oxide and additives of Table 4 is fabricated into the voltage-nonlinear resistors by the same process as Example 1.
  • the electrical characteristics of resulting resistors are sho rr in Table 4.
  • It will beeasilyynder IQ QIHQLIEQIPUP ait nszf ti xidasm m um oxide, silicon dioxide or chromium oxide and silicon dioxide results in the higher n-value and smaller change rates than those of Example 3.
  • the change rates of C and n values after impulse test carried out by same I method as that of Example 2 are also shown in Table -4.
  • the resistors of Example 2, 3 and 4 are tested in ac- 2O cordance with a method widely used in the electronic components parts.
  • the heating cycle test is carried out by repeating five times the cycle in which said resistors are kept at 85 C ambient temperature for 30 minutes,
  • Example 2 The voltage-nonlinear resistors according to Example 2, 3 and 4 are constructed to the arrester as shown in FIG. 2 by series connection of three pieces of resistor and one discharging gap. The C-value of said total pieces of voltage-nonlinear resistor is about 7,000V.
  • the impulse test are carried out by applying two impulses of 4 l0p.s, 1,500A/cm superposed on AC 3,000V. The follow current of the arrester shows the value lower than 1 1 A as shown in Table fi arrd t he A change rates of electrical properties after test show same results as the impulse test of Example 2, 3 and 4.
  • Example 7 The voltage-nonlinear resistors according to Example 2, 3 and 4 are constructed to the arrester as shown in FIG. 3 by series connection of three pieces of resis tor. The value of C of said total pieces of voltagenonlinear resistor is about 7,000V.
  • the impulse test are The follow current shows the value lower than lpAas shown in Table 0 and the change rates of electrical properties after test show same results as that of the impulse test in Example 2, 3 and 4.
  • Another impulse test are carried out by applying impulse having the value of 0.0lp.s in rise time. The rise time of current flowing through said arrester is lower than 0.05p.s.
  • a voltage-nonlinear resistor consisting essentially of a sintered body of a composition comprising as a main constitutent, zinc oxide (ZnO) and, as an additive, 0.1 to 3.0 mole percent of bismuth oxide (Bi O 0.05 to 3.0 mole percent of antimony oxide (Sb O and 0.1 to 3.0 mole percent of cobalt fluoride (C01 and electrodes applied to opposite surfaces of said sintered body? 2.
  • CoO cobalt oxide
  • MnO manganese oxide
  • SiO 4 silicon dioxide
  • An arrester comprising at least one voltagenonlinear resistor of claim 1 as a characteristic element.
  • An arrester comprising at least one voltagenonlinear resistor of claim 4 as a characteristic element.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Thermistors And Varistors (AREA)
US00335423A 1972-03-01 1973-02-23 Voltage-nonlinear resistors Expired - Lifetime US3805114A (en)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP47021815A JPS5140949B2 (enrdf_load_stackoverflow) 1972-03-01 1972-03-01
JP47021819A JPS5140953B2 (enrdf_load_stackoverflow) 1972-03-01 1972-03-01
JP47021817A JPS5140951B2 (enrdf_load_stackoverflow) 1972-03-01 1972-03-01
JP47021820A JPS5140954B2 (enrdf_load_stackoverflow) 1972-03-01 1972-03-01
JP47021814A JPS5140948B2 (enrdf_load_stackoverflow) 1972-03-01 1972-03-01
JP47021818A JPS5140952B2 (enrdf_load_stackoverflow) 1972-03-01 1972-03-01
JP47021816A JPS5140950B2 (enrdf_load_stackoverflow) 1972-03-01 1972-03-01

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US (1) US3805114A (enrdf_load_stackoverflow)
CA (1) CA968067A (enrdf_load_stackoverflow)
GB (1) GB1381093A (enrdf_load_stackoverflow)
IT (1) IT977553B (enrdf_load_stackoverflow)
NL (1) NL169652C (enrdf_load_stackoverflow)

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3886097A (en) * 1973-11-12 1975-05-27 Gen Motors Corp Method for making a low avalanche voltage metal oxide varistor
US3899451A (en) * 1972-09-11 1975-08-12 Tokyo Shibaura Electric Co Oxide varistor
US3903226A (en) * 1973-12-20 1975-09-02 Matsushita Electric Industrial Co Ltd Method of making voltage-dependent resistors
US3919123A (en) * 1972-11-01 1975-11-11 Nippon Denso Co Resistors for ignition plugs
US3928245A (en) * 1973-07-09 1975-12-23 Gen Electric Metal oxide voltage-variable resistor composition
US4172268A (en) * 1976-09-30 1979-10-23 Tokyo Shibaura Denki Kabushiki Kaisha Direct current circuit interrupting apparatus
US4234902A (en) * 1977-10-07 1980-11-18 Mitsubishi Denki Kabushiki Kaisha Enclosed lightning arrester
US4265844A (en) * 1979-05-16 1981-05-05 Marcon Electronics Co. Ltd. Method of manufacturing a voltage-nonlinear resistor
US4270160A (en) * 1978-03-17 1981-05-26 Mitsubishi Denki Kabushiki Kaisha Lightning resistive device in aerial power transmission system
US4295174A (en) * 1979-05-29 1981-10-13 Westinghouse Electric Corp. Multi-series group capacitor bank protection equipment
US4298900A (en) * 1980-01-02 1981-11-03 Avdeenko Boris K Overvoltage protective device
US4326233A (en) * 1979-08-02 1982-04-20 Tokyo Shibaura Denki Kabushiki Kaisha Lightning arrester
US4340921A (en) * 1978-05-17 1982-07-20 General Electric Company HVDC Power transmission system with metallic return conductor
DE3231118C1 (de) * 1982-08-20 1983-11-03 Siemens AG, 1000 Berlin und 8000 München Kombinierte Schaltungsanordnung mit Varistor und Verfahren zu ihrer Herstellung
US4424547A (en) 1980-11-04 1984-01-03 General Electric Company Surge suppressor construction
DE3335354A1 (de) * 1983-09-29 1985-04-18 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung dotierter zinkoxid-varistor-keramik
RU2125309C1 (ru) * 1997-11-26 1999-01-20 Акционерное общество открытого типа НИИ. "Электрокерамика" Устройство для защиты от перенапряжений
RU2125748C1 (ru) * 1997-11-04 1999-01-27 Акционерное общество открытого типа "Научно-исследовательский институт Электрокерамика" Устройство для защиты от перенапряжений
RU2125747C1 (ru) * 1997-11-04 1999-01-27 Акционерное общество открытого типа "Научно-исследовательский институт "Электрокерамика" Устройство для защиты от перенапряжений
RU2301471C1 (ru) * 2006-03-03 2007-06-20 Государственное образовательное учреждение высшего профессионального образования Балтийский государственный технический университет "ВОЕНМЕХ" им. Д.Ф. Устинова (БГТУ "ВОЕНМЕХ") Ограничитель перенапряжений

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116013624A (zh) * 2022-12-12 2023-04-25 国网湖南省电力有限公司 用于制备高稳定性直流电阻片的组合物、高稳定性直流电阻片及其制备方法和应用

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3515947A (en) * 1968-02-29 1970-06-02 Gen Electric Inclined arc chamber for a spark gap
US3642664A (en) * 1969-05-02 1972-02-15 Matsushita Electric Industrial Co Ltd Voltage variable resistor
US3663458A (en) * 1967-10-09 1972-05-16 Matsushita Electric Industrial Co Ltd Nonlinear resistors of bulk type
US3693053A (en) * 1971-10-29 1972-09-19 Gen Electric Metal oxide varistor polyphase transient voltage suppression

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3663458A (en) * 1967-10-09 1972-05-16 Matsushita Electric Industrial Co Ltd Nonlinear resistors of bulk type
US3515947A (en) * 1968-02-29 1970-06-02 Gen Electric Inclined arc chamber for a spark gap
US3642664A (en) * 1969-05-02 1972-02-15 Matsushita Electric Industrial Co Ltd Voltage variable resistor
US3693053A (en) * 1971-10-29 1972-09-19 Gen Electric Metal oxide varistor polyphase transient voltage suppression

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3899451A (en) * 1972-09-11 1975-08-12 Tokyo Shibaura Electric Co Oxide varistor
US3919123A (en) * 1972-11-01 1975-11-11 Nippon Denso Co Resistors for ignition plugs
US3928245A (en) * 1973-07-09 1975-12-23 Gen Electric Metal oxide voltage-variable resistor composition
USRE29731E (en) * 1973-07-09 1978-08-15 General Electric Company Metal oxide voltage-variable resistor composition
US3886097A (en) * 1973-11-12 1975-05-27 Gen Motors Corp Method for making a low avalanche voltage metal oxide varistor
US3903226A (en) * 1973-12-20 1975-09-02 Matsushita Electric Industrial Co Ltd Method of making voltage-dependent resistors
US4172268A (en) * 1976-09-30 1979-10-23 Tokyo Shibaura Denki Kabushiki Kaisha Direct current circuit interrupting apparatus
US4234902A (en) * 1977-10-07 1980-11-18 Mitsubishi Denki Kabushiki Kaisha Enclosed lightning arrester
US4270160A (en) * 1978-03-17 1981-05-26 Mitsubishi Denki Kabushiki Kaisha Lightning resistive device in aerial power transmission system
US4340921A (en) * 1978-05-17 1982-07-20 General Electric Company HVDC Power transmission system with metallic return conductor
US4265844A (en) * 1979-05-16 1981-05-05 Marcon Electronics Co. Ltd. Method of manufacturing a voltage-nonlinear resistor
US4295174A (en) * 1979-05-29 1981-10-13 Westinghouse Electric Corp. Multi-series group capacitor bank protection equipment
US4326233A (en) * 1979-08-02 1982-04-20 Tokyo Shibaura Denki Kabushiki Kaisha Lightning arrester
US4298900A (en) * 1980-01-02 1981-11-03 Avdeenko Boris K Overvoltage protective device
US4424547A (en) 1980-11-04 1984-01-03 General Electric Company Surge suppressor construction
DE3231118C1 (de) * 1982-08-20 1983-11-03 Siemens AG, 1000 Berlin und 8000 München Kombinierte Schaltungsanordnung mit Varistor und Verfahren zu ihrer Herstellung
US4506285A (en) * 1982-08-20 1985-03-19 Siemens Aktiengesellschaft Substrate made of varistor material having a plurality of electronic components mounted thereon
DE3335354A1 (de) * 1983-09-29 1985-04-18 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung dotierter zinkoxid-varistor-keramik
RU2125748C1 (ru) * 1997-11-04 1999-01-27 Акционерное общество открытого типа "Научно-исследовательский институт Электрокерамика" Устройство для защиты от перенапряжений
RU2125747C1 (ru) * 1997-11-04 1999-01-27 Акционерное общество открытого типа "Научно-исследовательский институт "Электрокерамика" Устройство для защиты от перенапряжений
RU2125309C1 (ru) * 1997-11-26 1999-01-20 Акционерное общество открытого типа НИИ. "Электрокерамика" Устройство для защиты от перенапряжений
RU2301471C1 (ru) * 2006-03-03 2007-06-20 Государственное образовательное учреждение высшего профессионального образования Балтийский государственный технический университет "ВОЕНМЕХ" им. Д.Ф. Устинова (БГТУ "ВОЕНМЕХ") Ограничитель перенапряжений

Also Published As

Publication number Publication date
GB1381093A (en) 1975-01-22
CA968067A (en) 1975-05-20
NL7302904A (enrdf_load_stackoverflow) 1973-09-04
IT977553B (it) 1974-09-20
NL169652B (nl) 1982-03-01
NL169652C (nl) 1982-08-02

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