US3799648A - Ferroelastic crystals switched by motion of a domain wall having a zigzag configuration - Google Patents

Ferroelastic crystals switched by motion of a domain wall having a zigzag configuration Download PDF

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US3799648A
US3799648A US00318502A US31850272A US3799648A US 3799648 A US3799648 A US 3799648A US 00318502 A US00318502 A US 00318502A US 31850272 A US31850272 A US 31850272A US 3799648 A US3799648 A US 3799648A
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crystal
ferroelastic
domain
zigzag
wall
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R Flippen
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EIDP Inc
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EI Du Pont de Nemours and Co
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Priority to US00318502A priority Critical patent/US3799648A/en
Priority to FR7345441A priority patent/FR2211417B3/fr
Priority to NL7317496A priority patent/NL7317496A/xx
Priority to DE2364096A priority patent/DE2364096A1/de
Priority to CA188,914A priority patent/CA1017233A/en
Priority to GB5933473A priority patent/GB1421360A/en
Priority to JP48143663A priority patent/JPS5924120B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G7/00—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture
    • H01G7/02—Electrets, i.e. having a permanently-polarised dielectric
    • H01G7/025—Electrets, i.e. having a permanently-polarised dielectric having an inorganic dielectric
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/0009—Materials therefor
    • G02F1/0018—Electro-optical materials
    • G02F1/0027—Ferro-electric materials
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
    • G02F1/05—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect with ferro-electric properties

Definitions

  • Ferroelastic materials are divided into domains throughout which the strain tensor is the same.
  • Two domains which differ in the strain tensor generally interface at one of two possible mutually perpendicular domain walls which tend to be highly planar, and lie in distinct crystallographic planes. Such walls tend to extend completely across the'crystal.
  • switching one domain grows at the expense of a neighboring domain. With walls of the type hereinabove discussed, switching is usually accomplished by motion of the domain walls in a direction perpendicular to their plane.
  • the phenomenon of switching takes place because the energy barrier between the states is small. This implies that the ferroelastic strain states are each a slightly distorted form of a certain prototype state of higher symmetry. In most cases, the prototype state is the state of the crystal above the Curie point transition temperature.
  • the symmetry of the prototype state can be deduced from the symmetry of the ferroelastic state and the domain structure (Aizu, J. Phys. Soc. Japan, Vol. 27, 387 (1969)) and hence the possible species possessing ferroelasticity can be classified in terms of the point group symmetry of the prototype and the point group symmetry of the ferroelastic species. In Aizus notation, the point group symmetry of the prototype species is first written followed by F and then the symmetry of the ferroelastic species.
  • Ferroelectric materials exhibit 'a hysteresis loop in a plot of electric polarization versus electric field and generally display a transi tion temperature called the Curie temperature above which the material is paraelectric.
  • Aizu (op cit.) has recognized coupled ferroelastic/- ferroelectric materials wherein ferroelastic domains coextensive with the ferroelectric domains exist and which have the same Curie temperature for the ferroelectric and ferroelastic properties. Such crystals can I be switched by the application of either electrical or mechanical stress. Domain structures and domain walls are, however, dictated by the ferroelastic properties.
  • Crystals having coupled ferroelectric/ferroelastic properties have been employed heretofore in devices utilizing the switching properties whereby the crystal can be switched from one ferroelectric/ferroelastic state to another, by an electric or mechanical stress and wherein the change in state is detected by electrical or optical means as shown, for example, in U. S. Pat. Nos. 3,623,031, 3,661,442, 3,559,185, 3,602,904, and
  • the present invention comprises a crystal of a matev rial having ferroelasticproperties, said crystal having a domain wall extending across the crystal in a zigzag configuration, and means to move said domain wall whereby a substantial portion of said crystal is switched from one ferroelastic strain state to a second ferroelastic strain state.
  • Preferred crystals having ferroelastic properties are coupled ferroelastic/ferroelectric crystals and especially those crystals exhibiting uniaxial spontaneous electric polarization.
  • Particularly preferred are crystals of the rare earth molybdates having the B-gadolinium molybdate structure, especially B'-gadolinium molybdate itself.
  • This invention also comprises methods of making the aforesaid zigzag domain walls in crystals having ferroelastic properties by applying a shear stress to such crystals under conditions inhibiting the formation of ordinary planar domain walls. Such methods include:
  • FIG. 1 is a microphotograph ofa zigzag wall in a halfwave plate of gadolinium molybdate.
  • FIG. 2 is a microphotograph of a zigzag wall in a quarterwave plate of gadolinium molybdate.
  • FIG. 3 is a sketch of the zigzag wall with the principal dimensions indicated. 7
  • FIG. 4 illustrates one method of creating zigzag walls in a plate of a crystalline material having ferroelastic properties.
  • FIG. 5a, 5b and 5c illustrate another method of making a zigzag wall.
  • FIG. 6 is a graph illustrating wall velocity versus applied stress for a domain wall in a ferroelastic materials
  • FIG. 7 illustrates the motion of the zigzag wall across the crystal.
  • FIG. 8 shows an optical switch using a crystal of a material having ferroelastic properties and containing a zigzag wall of the present invention.
  • FIG. 1 is shown a microphotograph ofa zigzag wall in a half-waveplate made of B-gadolinium molybdate which is a coupled ferroelectric/ferroelastic material having Aizu species 42mFmm2.
  • the plate is cut perpendicular to the c axis, that is, the [001 1 axis of electric polarization.
  • the photograph was made with polarized light with both polarizer and analyzer aligned parallel to one of the [110] planes whereby light transmitted by both domains is extinguished.
  • the polarization properties of the crystal plate in the vicinity of the domain wall differ from those of the surrounding domains when the domain wall is observed as a white line on a dark field.
  • the general line of the zigzag wall is parallel to a l 101 direction and the wall moves substantially as an entity along the other of the [I10] planes, on application of either electrical or mechanical stress tending to favor one of the domains separated by the wall.
  • FIG. 2 is a microphotograph of a quarter-wave c-cut plate of B-gadolinium molybdate divided into two domains by a zigzag wall.
  • the photograph is taken with the [1 10] set of planes.
  • the crystallographic directions I are indicated on the figure.
  • the plate I is divided into three domains, 2, 3 and 4, by a planar domain wall 6 and a zigzag wall 5, the edges a, c and e. etc. forming the tips of the zigzag are substantially aligned in a plane I which is a twinning plane capable of supporting a normal domain wall such as a domain wall 6.
  • the zigzag is a plane I which is a twinning plane capable of supporting a normal domain wall such as a domain wall 6.
  • edges b, d andf also lie in a plane parallel to the twinning plane of the normal domain wall, 6.
  • the distance between the planes containing the edges 0. c. e and the plane containing the edges b, d, f will be called the width of the wall, w.
  • Width w can vary widely, even for the same material.
  • w can be from to 4,000 microns.
  • the pitch can vary substantially even in crystals of the same material.
  • the pitch is between 5 and- 150 microns.
  • the ratio of the pitch to the width is less variable and is generally between 0.05 and 0.15.
  • the walls such as the wall between edge a and edge b which form the zigzag, appear to slightly sygmoid in shape but can be approximated closely by planes.
  • the planes lie at equal angles from the (I I0) twinning plane perpendicular to the twinning plane in which domain wall 6 lies.
  • the angle 0 can be calculated from the relation to tan 0 p/2w, thus from the aforesaid values of
  • FIG. 4 in FIG. 4 is shown a c-cut crystal of gadolinium molybdate 10 having its edges cut parallel to the [110] planes.
  • a fixed clamp 11 is cemented along one edge of the crystal and a movable clamp 12 is cemented along the opposite edge so that the edges of the clamps are parallel to (l 10) planes.
  • a cement should be employed which can be applied in the liquid state and hardened without substantial shrinkage so that strains are not imposed upon the crystal by hardening of the cement.
  • the crystal is placed upon the clamps and cement is allowed to flow along the edges of the crystal by capilliary action in order to form a linear cement line between the edge of the clamp and the crystal.
  • the regions of the crystal cemented to the clamps l1 and 12 are prevented from deforming andthus switching from one domain state to another; Thus domain walls trapped within the free region of the crystal are retained therein by the clamps 11 and 12.
  • Clamp II is provided with a screw 13 bear- 7 ing a clamp 12 so that pressure can be applied at clamp 12 as desired.
  • a'strain gauge can be placed between the screw 13 and clamp 12 to measure the applied stress, although this is not essential.
  • crystal 10 is a single domain crystal. If the crystal has ferroelectric properties, it must be electroded on the faces intersecting the ferroelectric axis and connection made between the electrodes so that the material may be manipulated like a pure ferroelastic material. Stress is then applied to the crystal 10 by tightening screw 13 against clamp 12.
  • FIG. 5a, 5b and 50 Another method of making the zigzag walls of the present invention is illustrated in FIG. 5a, 5b and 50.
  • the crystal consists of a c-cut plate of gadolinium molybdate having its edges parallel to the 110 planes and is divided into two domains by a domain wall 21.
  • the crystal is placed in a frame 22 between rounded protruding lugs 23 and 24 and a screw 25 passing through the frame 22 so that a bending stress can be applied'to the crystal perpendicular to domain wall 21, on application of pressure with screw 25.
  • FIG. 5a the crystal is shown prior to application of bending stress.
  • FIG. 5b the same crystal is shown after bending stress is applied.
  • the domain wall 21 appears to bend slightly as indicated where the bladelike domains impinge on it.
  • the domain wall 21 suddenly transforms to a zigzag domain wall as shown in FIG. 5c and the bladelike domains disappear.
  • the stress required to form the zigzag domain wall is substantially greater than the stress required to nucleate a planar wallin the gadolinium molybdate crystal.
  • the zigzag domain walls are formed at pressures of 5 kg per sq. cm or more in gadolinium molybdate.
  • Application of further stress tends to decrease the width and to a lesser extent the pitch of the zigzag wall.
  • the exact levels of stress required varies from crystal to crystal even in the same substance. However, for a given crystal, the results appear quite reproducible.
  • the zigzag wall can be manipulated by an electrical or mechanical stress in the same manner as a normal plannar domain wall. Methods of manipulating domain walls in crystals of ferroelectric/ferroelastic materials are described more completely in the copending commonly assigned application ofJohn R.
  • Barkley Ser. No. 251,055.
  • the variation of the speed of switching the crystal by movement of the zigzag wall as a function of applied stress is shown in FIG. 6. Over the range of velocities measureable by stroboscopic techniques, i.e., between points I and m on the curve of FIG. 6, the rate of switching measured by the reciprocal of the switching time is a linear function of stress.
  • FIG. 7 illustrates the geometric factors associated with the movement of the domain wall.
  • a portion of the zigzag wall 40 is shown at an initial location and the same wall 41 is shown after motion forward in response to stress.
  • the motion of the essentially planar domain walls making up the zigzag wall normal to the length is indicated by a vector shown by arrow 42 whereas the motion of the zigzag wall normal to the length of the zigzag wall is given by a vector indicated by the arrow 43.
  • the ratio of vector 43 to vector 42 is given by cosecant 0 wherein 6 is as defined herein:
  • the velocity of the essentially planar walls making up the zigzag wall normal to their face calculated from this expression is found to be essentially that of a conventional planar wall extending across the crystal.
  • the zigzag wall is formed in a crystal wafer 0.75 mm thick and 5.5 mm wide with the space 5.0 mm
  • the zigzag wall had a width w of 0.47 mm and a pitch of microns between the tips of the zigzag.
  • the wall moved at a threshold voltage of 50 volts applied to electrodes on the faces of the wafer, that is, a threshold field of 650 volts per centimeter. Measured mobility of the wall was found to be 0.280 cm sec-volts-, which is about 25 times the mobility measured for a planar wall in a crystal of this material. On the above considerations, an increase im mobility of about 15 would be expected More than one zigzag wall can be formed in a crystal and such walls can exist together with normal planar walls in the crystal provided the walls do not intersect. If the material has ferroelectric properties a crystal can be divided into the zones by partial electroding and the walls moved independently within each zone by application of suitable voltages to the partial electrodes.
  • FIG. 8 illustrates an arrangement which cam be employed as an optical switch.
  • a source of light 50 a lens SI adapted in a range to collimate the light, a polarizer 52 in the path of the collimated light, and an aperture stop 53 to'limit the aperture of the device.
  • a plate of a ferroelectric/ferroelastic material such as gadolinium molybdate 54 having a zigzag wall therein 55 is equipped with electrodes 56 and 57 on the c-cut faces thereof perpendicular to the planar zigzag wall.
  • Electrode 56 is a transparent electrode covering substantially all of the face of the crystal, whereas electrode 57 is a rectangular.
  • a voltage source 58 is supplied to provide an electric field of variable intensity and polarity between electrodes 56 and 57 whereby the domain wall 55 can be driven across the crystal 54 in either direction as desired.
  • Crystal 54 is desirably cut to a thickness which provides for quarter-wave retardation for light traversing the domains of the birefringent ferroelectric/ferroelastic crystal.
  • the light passing through crystal 54 passes through a second quarter-wave plate 59 and then through an analyzer 60.
  • Plate 59 can be a quarter-wave plate of gadolinium molybdate in the form of a single domain or a quarterwave plate of quartz or other birefringent material.
  • the ferroelectric/ferroelastic domains of gadolinium molybdate are biaxially birefringent with A n 3.90 X 10' for A 0.5 .1..
  • a quarter-wave plate is approximately 0.37 mm in thickness.
  • Plane polarized light passing through the crystal 54 is converted to circularly polarized light, the sense of the circular polarization being reversed on switching the crystal from one ferroelastic strain state to the other ferroelastic strain state I by motion of domain wall 55.
  • the circularly polarized light emerging from plate 54 is converted to plane polarized light by passage through plate 59 wherein the plane of polarization lies in one of two directions at right angles to each other according to the state to which crystal 54 is switched.
  • Analyzer 60 is then set to extinguish light passed byone or other of the two states of crystal 54 separated by domain wall 55. Accordingly, by application of an appropriate voltage from source 58, light from source 50 can be either passed or blocked by the optical system.
  • the zigzag walls of the present invention have a substantial width, they are employed in optical shutters wherein the optical aperture is large compared with the width of the wall.
  • the increase in speed of operation compared with an ordinary planar domain wall is given by the expression (Sz/Sp) (m /mp) (w A/A) where Sz/Sp is the ratio of switching speeds for a given field.
  • m mp is the ratio of mobilities for zigzag and planar walls.
  • A is the width of the aperture and w is the width of the zigzag wall.
  • values of m /mp of about 30 are readily obtained, thus even where the aperture is equal to the width of the zigzag wall an increase in switching speed in optical switches, of about [5 can be obtained by the use of the switching element of the present invention.
  • ferroelectric properties coupled with the ferroelastic properties is not necessary in this invention.
  • It coupled ferroelectric/ferroelastic crystals are employed, it is preferred that they should exhibit uniaxial behaviour. That is, the electric polarization must be constrained in one direction or the other along the specific axis.
  • the twinning planes' should have only a finite number of specific orientations within the crystal so that domain walls can be fonned, capable of being moved in a controlled manner by external control of the electric field, or with mechanical stress.
  • ferroelastic/ferroelectric single crystals are employed, they should exhibit uniaxial electric polarization.
  • Such crystals include all the crystals in the following Aizu point groups: 42mFmm2, v
  • crystals having the gadolinium molybdate structure Aizu species 42mFmm2 which can be represented by the formula More specifically it is the ferroelectrie/ferroelastic phase commonly referred to as [3' phase of the gadolinium molybate type materials which exhibits coupledv ferroelectric/ferroelastic behaviour. These materials display two orientations of twinning planes which are normal to both two-fold orientation axes of the paraelectric group 42m.
  • a-lead phosphate is a pure ferroelastic material, Aizu species 3mF2/m, which has a Curie temperature of 179 above which the crystal point group is 3m and below which the crystal point group is 2/m.
  • Aizu species 3mF2/m which has a Curie temperature of 179 above which the crystal point group is 3m and below which the crystal point group is 2/m.
  • a strain occurs in one of the three equivalent mirror planes of the prototype, high temperature trigonal phase resulting in one of three possible orientations for the nionoclinic axis and thus three possible domains throughout which the monoclinic axis has the same orientation.
  • Each pair of domains can interface at one of two possible, mutually perpendicular domain walls which lie along the direction of the domain interfaced.
  • a mobile zigzag t wall has been observed with p 18p.'and w 0.6 mm, i.e., having substantially the same dimensions as zigzag walls observed in various rare earth molybdate crystals.
  • a-lead phosphate is transparent from 0.28 to 5p.
  • the refractive index is about 2. l the material being biaxially birefringent ()An 7 X 10' in the be plane and is thus suitable for the construction of mechanically actuated optical switches.
  • a device comprising a crystal of a material having tion and means to move said domain wall whereby a substantial portion of said crystal is switched from one I wherein R and R are scandium, yttrium or a rare earth element having an atomic number of from 57 to 71, x
  • said means to move the domain wall comprises electrodes on the faces perpendicular to the c-axis and means to apply an electric voltage to said electrodes.
  • An optical shutter comprising a transparent birefringent crystal of a material having ferroelastic properties, said crystal being divided into a first ferroelastic domain and a second ferroelastic domain by a domain wall extending in a zigzag configuration across said crystal,
  • optical shutter of claim 8 wherein said crystal has theformula wherein R and R are scandium, yttrium or a rare earth element having an atomic number from 57 to 71, x is from 0 to 1.0, and e is from 0 to 0.2; and having the B'-gadolinium molybdate structure, said crystal being cut as a plate with faces perpendicular to the c-axis.
  • FIGURES 3 and 5b should appear as shown below:

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US00318502A 1972-12-26 1972-12-26 Ferroelastic crystals switched by motion of a domain wall having a zigzag configuration Expired - Lifetime US3799648A (en)

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US00318502A US3799648A (en) 1972-12-26 1972-12-26 Ferroelastic crystals switched by motion of a domain wall having a zigzag configuration
FR7345441A FR2211417B3 (en:Method) 1972-12-26 1973-12-19
NL7317496A NL7317496A (en:Method) 1972-12-26 1973-12-20
DE2364096A DE2364096A1 (de) 1972-12-26 1973-12-21 Ferroelastischer kristall mit zickzack-foermiger domainenwand
CA188,914A CA1017233A (en) 1972-12-26 1973-12-21 Ferroelastic crystals switched by motion of a domain wall having a zigzag configuration
GB5933473A GB1421360A (en) 1972-12-26 1973-12-21 Ferroelastic crystals
JP48143663A JPS5924120B2 (ja) 1972-12-26 1973-12-24 光変調素子

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FR (1) FR2211417B3 (en:Method)
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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4109359A (en) * 1976-06-07 1978-08-29 The United States Of America As Represented By The Secretary Of The Navy Method of making ferroelectric crystals having tailored domain patterns
US5193023A (en) * 1989-05-18 1993-03-09 Sony Corporation Method of controlling the domain of a nonlinear ferroelectric optics substrate
US5750272A (en) * 1995-02-10 1998-05-12 The Research Foundation Of State University Of New York Active and adaptive damping devices for shock and noise suppression
US5786926A (en) * 1995-11-24 1998-07-28 Sony Corporation Electro-optical device having inverted domains formed inside a ferro-electric substrate and electro-optical unit utilizing thereof
US6579635B2 (en) 2000-10-12 2003-06-17 International Business Machines Corporation Smoothing and stabilization of domain walls in perpendicularly polarized magnetic films

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59102130U (ja) * 1982-12-28 1984-07-10 株式会社高岳製作所 容器の除湿装置
JPH02194810A (ja) * 1989-01-23 1990-08-01 Kankiyoo:Kk 乾式除湿機

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3596863A (en) * 1969-01-28 1971-08-03 Nasa Fine adjustment mount
US3684351A (en) * 1969-03-10 1972-08-15 Hitachi Ltd A ferroelectric-ferroelastic electrically operated optical shutter device
US3732549A (en) * 1972-05-08 1973-05-08 Du Pont Process and apparatus for control of domain walls in the ferroelastic-ferroelectric crystals

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3596863A (en) * 1969-01-28 1971-08-03 Nasa Fine adjustment mount
US3684351A (en) * 1969-03-10 1972-08-15 Hitachi Ltd A ferroelectric-ferroelastic electrically operated optical shutter device
US3732549A (en) * 1972-05-08 1973-05-08 Du Pont Process and apparatus for control of domain walls in the ferroelastic-ferroelectric crystals

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4109359A (en) * 1976-06-07 1978-08-29 The United States Of America As Represented By The Secretary Of The Navy Method of making ferroelectric crystals having tailored domain patterns
US5193023A (en) * 1989-05-18 1993-03-09 Sony Corporation Method of controlling the domain of a nonlinear ferroelectric optics substrate
US5750272A (en) * 1995-02-10 1998-05-12 The Research Foundation Of State University Of New York Active and adaptive damping devices for shock and noise suppression
US5786926A (en) * 1995-11-24 1998-07-28 Sony Corporation Electro-optical device having inverted domains formed inside a ferro-electric substrate and electro-optical unit utilizing thereof
US6579635B2 (en) 2000-10-12 2003-06-17 International Business Machines Corporation Smoothing and stabilization of domain walls in perpendicularly polarized magnetic films

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NL7317496A (en:Method) 1974-06-28
GB1421360A (en) 1976-01-14
JPS4996297A (en:Method) 1974-09-12
DE2364096A1 (de) 1974-11-14
FR2211417A1 (en:Method) 1974-07-19
CA1017233A (en) 1977-09-13
FR2211417B3 (en:Method) 1976-10-15
JPS5924120B2 (ja) 1984-06-07

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