US3777205A - Method for making photoelectric device - Google Patents

Method for making photoelectric device Download PDF

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Publication number
US3777205A
US3777205A US00160103A US3777205DA US3777205A US 3777205 A US3777205 A US 3777205A US 00160103 A US00160103 A US 00160103A US 3777205D A US3777205D A US 3777205DA US 3777205 A US3777205 A US 3777205A
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US
United States
Prior art keywords
layer
photoconductive
support plate
layers
photoelectric device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US00160103A
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English (en)
Inventor
T Kohashi
T Nakamura
S Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
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Publication of US3777205A publication Critical patent/US3777205A/en
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/043—Photoconductive layers characterised by having two or more layers or characterised by their composite structure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/14—Inert intermediate or cover layers for charge-receiving layers

Definitions

  • ABSTRACT A method for manufacturing a photoelectric device having a plurality of photoconductive layers comprising the steps of forming on a surface of a semimanufactured article a layer of mixed suspension material consisting of powdery photoconductive material, binder material and volatile diluent, volatilizing said volatile diluent, repeating these steps to laminate the desired number of layers, and subjecting the laminated layers to a single heat treatment, thereby to set the photoconductive layers simultaneously.
  • a photoelectric device including a spacer frame between the electrodes, said frame encircling at least one photoconductive layer.
  • This invention relates to a photoelectric device and a method for manufacturing the same and more particularly to a method for manufacturing a photoelectric device having a composite laminate of photoconductive layers including the same or different kinds of powdery photoconductive materials and a device including a spacer frame.
  • This invention is to form two or more photoconductive layers only by a single-heat treatment without any significant deterioration in sensitivity.
  • FIG. 1 shows a vertical cross section of a solid-state image converting device as an example of a photoelectric device
  • FIG. 2 is a schematic view of an example of spacer means to be used in working out the invention.
  • FIG. 3 shows a vertical cross section of an embodiment of a solid-state image converting device according to the invention.
  • FIG. 1 shows an example of a solid-state image converting device to be manufactured by this invention, which comprises an electrode 1, a first photoconductive layer 21, a second photoconductive layer 22, an intermediate layer 3 for preventing optical feedback, an electroluminescent layer 4, and a transparent electrode 5 coated on a transparent glass support 6.
  • the transparent electrode 5 is formed of stannic oxide or the like and coated on the support 6.
  • the electroluminescent layer 4 of about 50 p. is formed of electroluminescent phosphor powder bonded by a'binder such as epoxy resin, disposed and set on the electrode 5.
  • the intermediate layer formed of either one of these two is disposed on, set and adhered to the layer 4.
  • a composite photoconductive laminate comprising the first photoconductive layer 21 of about 50 to 80 ;1. thick provided with an electrode 1 such as a grid electrode made of parallel metal wires having a diameter of about 10 ;1. arranged at intervals of about 200 to 600 u and the second photoconductive layer 22 of about 100 to 400 ,u. thick.
  • a N esa electode 5, an electroluminescent layer 4 and an intermediate layer 3 such as an opaque layer for preventing optical feedback are formed on a transparent glass support 6 by the conventional method.
  • the Nesa electrode 5 is formed not on the whole surface of the support plate 6 but leaving space therearound as shown in FIG. 3 for preventing contact with a thin metal wire 1 to be wound in the following step.
  • a relatively thick second photoconductive layer 22 of about to 400 p. is formed using spacer frame means 7, 7 (see FIG. 2) to form a uniform layer.
  • the use of a spacer frame prevents the leak of photoconductive suspension material and enables the manufacture of a uniform photoconductive layer.
  • the spacer means comprises a pair of frame members 7 and 7 bonded to each other by an adhesive orthe like so as to be individually detachable.
  • the thickness A of the spacer member 7 is selected to be equal to or alittle less than the thickness of the second photoconductive layer 22. In order to form a thick uniform photoconductive layer having a thickness of about 100 to 400 p.
  • photoconductive material is mixed with thermal-setting binder such as epoxy resin and added with volatile diluent which melts the binder, such as acetone alcohol, thereby to form a fluid suspension mixture.
  • thermal-setting binder such as epoxy resin
  • volatile diluent which melts the binder, such as acetone alcohol
  • the thickness B of the spacer member 7 is se lected to be equal to or a little more than the amount of decrease in the thickness of the layer due to the volatilization of the solvent.
  • the mixture loses fluidity and forms a uniform and relatively stable photoconductive layer 22 of thickness A. Then, the spacer number 7 is removed to leave only the member 7.
  • a thin metal wire or wires 1' are wound around the composite structure formed of layers indicated by 3, 4, 5, 6, 7 and 22 at intervals of about 200 to 600 ,u. to form a foraminous electrode 1.
  • the spacer member 7 serves to prevent the metal wire from unnecessarily embedding into the second photoconductive layer,22 which is not yet set hard enough, and to prevent a dielectric breakdown between the electrodes 1 and 5. Therefore, the spacer member 7 should be formed of an insulating material of low loss and high breakdown voltage as well as the ability of bearing a certain degree of mechanical pressure, such as polyester, vinyl resin.
  • the foraminous electrode may also be formed of a metal net.
  • a first photoconductive layer 21 is formed on the layer 22 by coating the material from fluid state similar to the formation of 5 the second photoconductive layer 22, by the screen method or the like and then volatilizing the solvent.
  • the first and second photoconductive layers 21 and 22 are subjected to heat treatment together with the support plate 6 at a predetermined temperature and for a predetermined duration to set the binder in both layers.
  • Conductive paint such as made of silver is zonally coated and hardened on both ends of the support plate 6 either before or after the thermal setting of photoconductive layers. Then, after the thermal setting, unnecessary portions of the metal wire 1' existing on the surface of the glass support 6 are removed.
  • the composite laminate 21, 22 having the foraminous electrode 1 is formed.
  • the foraminous electrode 1 is disposed on the upper surface of the second photoconductive layer 22 and the first photoconductive layer 21 is formed embedding'this electrode 1.
  • the thickness A of the spacer member 7 is selected to be equal to or a little less than the sum of the thicknesses of the layer 22 and the layer 21 up to the plane on which electrode 1 is to be disposed and the dilution of material for the layer 21 is made higher compared with that for the layer 22.
  • suspension of material for the layer 22 is introduced and formed into layer using the spacer member 7' as guide, and the solvent is volatilized.
  • the same process is repeated with suspension of material for the layer 21.
  • the spacer member 7 is removed and the foraminous electrode 1 formed of thin metal wires is disposed thereon.
  • the suspension material for the layer 21 is again coated and the solvent is volatilized.
  • the thickness of layer 21 decreases to partially expose the electrode 1 above the surface as shown in FIG. 1.
  • the composite photoconductive laminate is set by heating.
  • a composite laminate having a greater number of layers can be made based on a similar principle.
  • materials for the respective layers may be either the same or different.
  • a photoelectric device comprising a transparent support plate of insulating material, a film of transparent conductive material provided on said support plate leaving a marginal space on the surface of said support plate around said film, at least one intermediate layer deposited on said support plate and said film, a spacer frame of insulating material disposed on said at least one intermediate layer and having the same peripheral dimensions as said support plate, a layer of photoconductive material filling the inside of said frame over said intermediate layer, and a grid formed of thin metal wire stretched between opposite top edges of said frame.
  • said at least one intermediate layer comprises a first layer of an electroluminescent material and a second layer disposed on said first layer and madeof at least one material selected from a group of light reflecting materials and light intercepting materials.
  • a photoconductive device wherein said photoconductive layer is a composite layer consisting of a lamination of layers of different photoconductive materials.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Electroluminescent Light Sources (AREA)
US00160103A 1968-02-02 1971-07-06 Method for making photoelectric device Expired - Lifetime US3777205A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP43006824A JPS4813277B1 (de) 1968-02-02 1968-02-02

Publications (1)

Publication Number Publication Date
US3777205A true US3777205A (en) 1973-12-04

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ID=11648951

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Application Number Title Priority Date Filing Date
US00160103A Expired - Lifetime US3777205A (en) 1968-02-02 1971-07-06 Method for making photoelectric device

Country Status (6)

Country Link
US (1) US3777205A (de)
JP (1) JPS4813277B1 (de)
DE (1) DE1904832C3 (de)
FR (1) FR2001209A1 (de)
GB (1) GB1252806A (de)
NL (1) NL151202B (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5551802A (en) * 1978-10-09 1980-04-15 Nippon Carbide Kogyo Kk Filament for wig
JPS60111461A (ja) * 1983-11-22 1985-06-17 Sharp Corp 画像読取素子
JPS6312716A (ja) * 1986-06-30 1988-01-20 Kuraray Co Ltd 人工毛髪及び製造方法
US7759430B2 (en) 2003-07-25 2010-07-20 Kaneka Corporation Flame retardant polyester fiber for artificial hair
CN101864613A (zh) 2003-07-25 2010-10-20 株式会社钟化 头发制品

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2834903A (en) * 1952-10-30 1958-05-13 Gen Electric Electroluminescent lighting device
US2878394A (en) * 1957-09-05 1959-03-17 Sylvania Electric Prod Light amplifier and storage device
US3043978A (en) * 1958-10-24 1962-07-10 Sylvania Electric Prod Electroluminescent lamp
US3110836A (en) * 1961-03-16 1963-11-12 Westinghouse Electric Corp Electroluminescent device and method of making
US3217168A (en) * 1960-12-29 1965-11-09 Philips Corp Photosensitive solid-state image intensifier
US3268755A (en) * 1961-03-30 1966-08-23 Optische Ind De Oude Delft Nv Current-electroluminescence device having a high resistance layer
US3274419A (en) * 1962-01-23 1966-09-20 Dow Chemical Co Flexible electroluminescent lamp having transparent metal-coated strands as the light transmitting electrode
US3315080A (en) * 1962-11-20 1967-04-18 Matsushita Electric Ind Co Ltd Solid-state image intensifier with variable contrast ratio
US3348056A (en) * 1963-05-22 1967-10-17 Matsushita Electric Ind Co Ltd Wavelength converting type radiant energy responsive display device
US3648052A (en) * 1969-01-22 1972-03-07 Matsushita Electric Ind Co Ltd Solid-state image-converting device

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2834903A (en) * 1952-10-30 1958-05-13 Gen Electric Electroluminescent lighting device
US2878394A (en) * 1957-09-05 1959-03-17 Sylvania Electric Prod Light amplifier and storage device
US3043978A (en) * 1958-10-24 1962-07-10 Sylvania Electric Prod Electroluminescent lamp
US3217168A (en) * 1960-12-29 1965-11-09 Philips Corp Photosensitive solid-state image intensifier
US3110836A (en) * 1961-03-16 1963-11-12 Westinghouse Electric Corp Electroluminescent device and method of making
US3268755A (en) * 1961-03-30 1966-08-23 Optische Ind De Oude Delft Nv Current-electroluminescence device having a high resistance layer
US3274419A (en) * 1962-01-23 1966-09-20 Dow Chemical Co Flexible electroluminescent lamp having transparent metal-coated strands as the light transmitting electrode
US3315080A (en) * 1962-11-20 1967-04-18 Matsushita Electric Ind Co Ltd Solid-state image intensifier with variable contrast ratio
US3348056A (en) * 1963-05-22 1967-10-17 Matsushita Electric Ind Co Ltd Wavelength converting type radiant energy responsive display device
US3648052A (en) * 1969-01-22 1972-03-07 Matsushita Electric Ind Co Ltd Solid-state image-converting device

Also Published As

Publication number Publication date
DE1904832B2 (de) 1973-03-29
NL151202B (nl) 1976-10-15
DE1904832C3 (de) 1973-10-11
JPS4813277B1 (de) 1973-04-26
FR2001209A1 (de) 1969-09-26
GB1252806A (de) 1971-11-10
NL6901557A (de) 1969-08-05
DE1904832A1 (de) 1969-08-14

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