US3775635A - Power amplifier klystrons operating in wide frequency bands - Google Patents

Power amplifier klystrons operating in wide frequency bands Download PDF

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Publication number
US3775635A
US3775635A US00281272A US3775635DA US3775635A US 3775635 A US3775635 A US 3775635A US 00281272 A US00281272 A US 00281272A US 3775635D A US3775635D A US 3775635DA US 3775635 A US3775635 A US 3775635A
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frequency
band
klystron
section
amplifier
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US00281272A
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G Faillon
G Firmain
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Thales SA
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Thomson CSF SA
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J25/00—Transit-time tubes, e.g. klystrons, travelling-wave tubes, magnetrons
    • H01J25/02—Tubes with electron stream modulated in velocity or density in a modulator zone and thereafter giving up energy in an inducing zone, the zones being associated with one or more resonators
    • H01J25/10—Klystrons, i.e. tubes having two or more resonators, without reflection of the electron stream, and in which the stream is modulated mainly by velocity in the zone of the input resonator

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  • ABSTRACT Wide-band improved klystrons of this kind can be used for operation within wide power ranges and even at relatively low powers, for example some few hundreds of killowatts.
  • the present invention relates to improvements in widebandklystron power amplifiers. It relates more particularly to klystrons improved to give them high efficiency throughout the whole of the working frequency band, this even in the case of relatively lowpower klystrons producing outputs in the order of some few hundreds of kilowatts for example.
  • This amplifier section also often known as the large signal section, comprises a certain numberof cavities where the effective high-frequency power (HF) is generated.
  • HF high-frequency power
  • a' pre-amplifier or small signal section, to the input of which the HF signal for amplification is applied and which comprises a certain number of cavities where the gain isbuilt up; a judicious choice of the number of these cavities, their arrangement and their tuned frequencies which are staggered in relation to one another in accordance with a known technique, makes it possible to achieve a suitable gain'and passband in this pre-amplifier section.
  • a circuit for picking off' the amplified HF power which in the conventional way and depending upon the type of klystron, comprises one or more cavities, possibly followed by filters, a resonant spiral, etc.
  • the object of the present invention is to produce klystron amplifiers which will operate properly and in particular with a high and substantially constant efficiency
  • klystron can be operated'within a-wide frequency band" B centred on a frequency F 0 comprises, within an evac-' uated enclosure, an electron-gunemitting anelectron beam, a first set of resonant cavities known'as the preamplifier section, a second set of resonant cavities known as the amplifier" section, a high frequency cir cuit for picking off the amplified-high frequency signal;
  • one/several of the resonant cavity/ies in the said amplifier" section'beingtunedto a frefor which the klystron has a maximum efficiency is higher than the centre frequency F0 and lower than said'maximum frequency F and said amplifier section furthermore comprising one/several harmonic cavity/ies tuned to a frequency 2Fo B twice the-minimum frequency of the'band B and less than said'2Fo-B frequency by an amount such'that an increase inthe klystron efficiency is achieved by this/these'cavity/ies in respect of high frequency signal'shavinga frequency less than the centre frequency and greater than the minimum frequency F 1 of the frequency band B.
  • FIGS. 1 and 2 are graphs indicatingthe'behaviour. of the variation, as a function of frequency, in the efficiency of wide-band conventional klystrons for high (FIG. I) and low (FIG. 2) power'2) power outputs
  • FIG. 3 is a graph indicating the behaviour of thevariation, as a function of frequency, in'the efficiency of a klystron improved in accordance with the invention
  • FIG. 4 is a highly schematic representationof anembodiment of part of a klystron in accordance with the invention.
  • FIG. 1 illustrates the behaviour of a curveplottingefficiency r as a function of frequency F, in aconventional klystron power amplifier.
  • this efficiency r is brought to a maximum through the band B, by utilisingin the amplifier section of the klystron, cavities tuned. to frequencies higher than the frequency Fo.
  • FIG. 2 illustrates the behaviour of the efficiency curve in this kind of lower power klystron, the klystron having a passband B identical to that of FIG. 1.
  • FIG. 3 illustrates the behaviour of the efficiency curve r as a function of frequency F, in a klystron improved in accordance with the invention
  • FIG. 4 schematically illustrating a sectional view of such a klystron.
  • the klystron shown in FIG. 4 contains an evacuated enclosure 1 of approximately cylindrical general shape, this enclosure exhibiting at one end an electron-gun symbolically represented by the emissive cathode 2, and at the other end a collector electrode 3.
  • the beam of electrons emitted by the cathode 2 and directed towards the collector 3, passes through the drift tube formed by the succession of drift spaces where electron bunching takes place and between which there are interposed resonators which constitute the different cavities 4 to 10.
  • the first cavity through a coupler device schematically marked 11, receives the high-frequency signal for amplification.
  • This signal transposed to the electron beam emitted by the cathode and modulated in the input cavity 4, is preamplified in known fashion in the first section I of the klystron, where the gain is developed.
  • this first section comprises two socalled fundamental" cavities, that is to say which are tuned within the operating frequency band B of the klystron this section, in a manner known per se, can comprise more than two such cavities.
  • the third section III of the klystron schematically represented here by a fundamental" output cavity, with which there is associated a coupler device 12 picking off the amplified HF signal, is the section in which the HF power is extracted and, as stated hereinbefore, is in fact constituted in a manner known per se, by any suitable system for extracting the maximum power within the working frequency band, for example two coupled cavities, a cavity associated with a filter, a resonant spiral, etc.
  • the second section II, the power amplifier proper, here comprises four cavities 6, 7, 8, 9, one of which is a harmonic" cavity 7.
  • a klystron in accordance with the invention comprises, in its amplifier section II, on the one hand cavities tuned to frequencies higher than the maximum frequency F F 8/2 of the working band, and on the other hand harmonic cavities tuned to frequencies close to twice the minimum band frequency, namely 2F 2 (F 8/2) 2F B.
  • the diameter d and length l of these harmonic cavities are respectively equal substantially to half the diameter D and half the length L, of the fundamental cavities.
  • the cavities tuned to the frequencies higher than the mean frequency F are so tuned in such a way that the efficiency curve which would be obtained in the absence of the harmonic cavities (curve ABC), is not symmetrical in relation to F,,, but has its peak M located between F, and the maximum frequency F of the band B.
  • This result is achieved by tuning these cavities to frequencies higher than those which would produce a curve symmetrical in relation to F in the manner adopted in conventional klystrons.
  • the klystron can have one or more harmonic cavities and one or more cavities tuned to frequencies higher than F,,.
  • the location of these cavities in relation to one another, in the amplifier section II, can vary.
  • the amplifier section II comprises a fundamental cavity 6 tuned in the working frequency band B, then a harmonic cavity 7 tuned to a frequency slight lower than (2 F B), 1.88 F for example for a bandwidth B equal to 10 percent of F,, then two cavities 8 and 9 tuned to frequencies higher than the frequency F,,; the cavity 8 is for example tuned to 1.05 F, and the cavity 9 to 1.07 F,, it being understood of course that these values are given purely by way of example.
  • klystrons in accordance with the invention will have efficiencies varying for example between 50 and percent for the whole of the bandwidth B prior art klystrons operating under the same conditions of power, frequency and bandwidth, will have efficiency variations ranging from 44 to 60 percent.
  • a klystron for power amplification of a high frequency signal which klystron can be operated within a wide frequency band B centred on a frequency Fo, comprising, within an evacuated enclosure, an electron-gun emitting an electron beam, a first set of resonant cavities known as the preamplifier" section, a second set of resonant cavities known as the amplifier section, a high frequency circuit for picking off the amplified high frequency signal and a collector, at least one of the resonant cavities in the said amplifier section being tuned to a frequency which is higher than the maximum frequency band B such that the frequency of the high frequency signal, for which the klystron has a maximum efficiency, is higher than the centre frequency F0 and lower than said maximum frequency F and said amplifier" section furthermore comprising at least one harmonic" cavity tuned to a so-called harmonic frequency close to a frequency (2 Fo-B) twice the minimum frequency of the band B, said so-called harmonic frequency being less than said 2Fo-B frequency by an amount such that an increase in the

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US00281272A 1971-09-16 1972-08-17 Power amplifier klystrons operating in wide frequency bands Expired - Lifetime US3775635A (en)

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FR7133392A FR2153585A5 (ja) 1971-09-16 1971-09-16

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US (1) US3775635A (ja)
DE (1) DE2245220A1 (ja)
FR (1) FR2153585A5 (ja)
GB (1) GB1366741A (ja)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3904917A (en) * 1973-05-24 1975-09-09 Nippon Electric Co High-efficiency broadband klystron amplifier of reduced length
US3974417A (en) * 1974-12-06 1976-08-10 Nippon Electric Company, Ltd. Four-cavity velocity modulation tube
US4019089A (en) * 1975-04-03 1977-04-19 Nippon Electric Company, Ltd. Wideband multi-cavity velocity modulation tube
US4800322A (en) * 1984-10-23 1989-01-24 Litton Systems, Inc. Broadband klystron cavity arrangement
US5225739A (en) * 1990-08-24 1993-07-06 Thomson Tubes Electroniques Klystron with cavities arranged in different blocks for providing widened instantaneous passband
US5521551A (en) * 1994-11-21 1996-05-28 Ferguson; Patrick E. Method for suppressing second and higher harmonic power generation in klystrons
EP0696048A3 (en) * 1994-08-03 1998-03-18 Eev Limited Electron beam tubes
US5838107A (en) * 1995-07-28 1998-11-17 Thomson Tubes Electroniques Multiple-beam electron tube with cavity/beam coupling via drift tubes having facing lips
US6025678A (en) * 1996-12-10 2000-02-15 Thomson Tubes Electroniques Linear-beam microwave tube with output cavity beyond the collector
US6147447A (en) * 1997-06-13 2000-11-14 Thomson Tubes Electroniques Electronic gun for multibeam electron tube and multibeam electron tube with the electron gun
US6486605B1 (en) 1998-07-03 2002-11-26 Thomson Tubes Electroniques Multibeam electronic tube with magnetic field for correcting beam trajectory
US20020180275A1 (en) * 1999-12-30 2002-12-05 Georges Faillon Microwave pulse generator incorporating a pulse compressor
US20200118782A1 (en) * 2017-06-13 2020-04-16 Canon Electron Tubes & Devices Co., Ltd. Klystron

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2579480A (en) * 1947-08-26 1951-12-25 Sperry Corp Ultrahigh-frequency electron discharge apparatus
US2591910A (en) * 1945-09-10 1952-04-08 Emi Ltd Electron discharge amplifier device employing hollow resonator
US3195007A (en) * 1960-10-28 1965-07-13 Litton Prec Products Inc Stagger-tuned klystron with cavities resonant outside passband
US3249794A (en) * 1959-08-06 1966-05-03 Varian Associates High frequency tube method and apparatus
US3453483A (en) * 1966-12-05 1969-07-01 Varian Associates Microwave linear beam tube employing an extended interaction resonator operating on an odd pi mode
US3483420A (en) * 1966-12-05 1969-12-09 Varian Associates Klystron amplifier employing helical distributed field buncher resonators and a coupled cavity extended interaction output resonator
US3594606A (en) * 1970-04-15 1971-07-20 Varian Associates Velocity modulation tube employing cascaded harmonic prebunching
US3622834A (en) * 1970-04-15 1971-11-23 Varian Associates High-efficiency velocity modulation tube employing harmonic prebunching

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2591910A (en) * 1945-09-10 1952-04-08 Emi Ltd Electron discharge amplifier device employing hollow resonator
US2579480A (en) * 1947-08-26 1951-12-25 Sperry Corp Ultrahigh-frequency electron discharge apparatus
US3249794A (en) * 1959-08-06 1966-05-03 Varian Associates High frequency tube method and apparatus
US3195007A (en) * 1960-10-28 1965-07-13 Litton Prec Products Inc Stagger-tuned klystron with cavities resonant outside passband
US3453483A (en) * 1966-12-05 1969-07-01 Varian Associates Microwave linear beam tube employing an extended interaction resonator operating on an odd pi mode
US3483420A (en) * 1966-12-05 1969-12-09 Varian Associates Klystron amplifier employing helical distributed field buncher resonators and a coupled cavity extended interaction output resonator
US3594606A (en) * 1970-04-15 1971-07-20 Varian Associates Velocity modulation tube employing cascaded harmonic prebunching
US3622834A (en) * 1970-04-15 1971-11-23 Varian Associates High-efficiency velocity modulation tube employing harmonic prebunching

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3904917A (en) * 1973-05-24 1975-09-09 Nippon Electric Co High-efficiency broadband klystron amplifier of reduced length
US3974417A (en) * 1974-12-06 1976-08-10 Nippon Electric Company, Ltd. Four-cavity velocity modulation tube
US4019089A (en) * 1975-04-03 1977-04-19 Nippon Electric Company, Ltd. Wideband multi-cavity velocity modulation tube
US4800322A (en) * 1984-10-23 1989-01-24 Litton Systems, Inc. Broadband klystron cavity arrangement
US5225739A (en) * 1990-08-24 1993-07-06 Thomson Tubes Electroniques Klystron with cavities arranged in different blocks for providing widened instantaneous passband
EP0696048A3 (en) * 1994-08-03 1998-03-18 Eev Limited Electron beam tubes
US5821693A (en) * 1994-08-03 1998-10-13 Eev Limited Electron beam tubes having a unitary envelope having stepped inner surface
US5521551A (en) * 1994-11-21 1996-05-28 Ferguson; Patrick E. Method for suppressing second and higher harmonic power generation in klystrons
US5838107A (en) * 1995-07-28 1998-11-17 Thomson Tubes Electroniques Multiple-beam electron tube with cavity/beam coupling via drift tubes having facing lips
US6025678A (en) * 1996-12-10 2000-02-15 Thomson Tubes Electroniques Linear-beam microwave tube with output cavity beyond the collector
US6147447A (en) * 1997-06-13 2000-11-14 Thomson Tubes Electroniques Electronic gun for multibeam electron tube and multibeam electron tube with the electron gun
US6486605B1 (en) 1998-07-03 2002-11-26 Thomson Tubes Electroniques Multibeam electronic tube with magnetic field for correcting beam trajectory
US20020180275A1 (en) * 1999-12-30 2002-12-05 Georges Faillon Microwave pulse generator incorporating a pulse compressor
US20200118782A1 (en) * 2017-06-13 2020-04-16 Canon Electron Tubes & Devices Co., Ltd. Klystron

Also Published As

Publication number Publication date
DE2245220A1 (de) 1973-03-22
GB1366741A (en) 1974-09-11
FR2153585A5 (ja) 1973-05-04

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