US3763003A - Method for producing ferrite thin film body - Google Patents

Method for producing ferrite thin film body Download PDF

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Publication number
US3763003A
US3763003A US00151069A US3763003DA US3763003A US 3763003 A US3763003 A US 3763003A US 00151069 A US00151069 A US 00151069A US 3763003D A US3763003D A US 3763003DA US 3763003 A US3763003 A US 3763003A
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United States
Prior art keywords
substrate
ferrite
thin film
metallic layers
solid solution
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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US00151069A
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English (en)
Inventor
S Kobayashi
M Torii
K Oshima
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FDK Corp
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FDK Corp
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Publication date
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    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C19/00Alloys based on nickel or cobalt
    • C22C19/007Alloys based on nickel or cobalt with a light metal (alkali metal Li, Na, K, Rb, Cs; earth alkali metal Be, Mg, Ca, Sr, Ba, Al Ga, Ge, Ti) or B, Si, Zr, Hf, Sc, Y, lanthanides, actinides, as the next major constituent
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C14/00Alloys based on titanium

Definitions

  • This invention relates to a method for producing a ferrite thin film body, to be used mainly as memory elements, and more particularly to a method wherein each of the metals composing the ferrite is separately applied, in layers, on a non-magnetic heat-resistant substrate and then are subjected separately to diffusion and oxidizing reactions.
  • vacuum evaporation and a spattering method have been used to produce ferrite thin film body on a non-magnetic heat-resistant substrate, the substrate having, for example, the form of a wire or a plate.
  • the metals composing the ferrite are heated enough to be evaporated and are solidified, under vacuum, on the substrate to form alloy layers thereon.
  • the alloy layers are subjected to an oxidizing reaction to form the ferrite thin film body on the substrate.
  • An objective of the presentinvention is to provide a method for producing a ferrite thin film body of high reliability and free from the above-mentioned disadvantages.
  • the method for producing ferrite thin film body comprises the step of separately applying each of the metals composing the ferrite in layers on a non-magnetized heat-resistant substrate, subjecting the metallic layers to a diffusion reaction under inert gas at an elevated temperature to form a diffused solid solution, and subjecting the diffused solid solution to oxidation at an elevated temperature for a time period sufficient to change the solid solution to a ferrite body.
  • the substrate is made of a platinum wire or an alumina-ceramic wire.
  • the metallic layers composing the ferrite on the substrate are exposed to an inert gas at an elevated temperature so as to change the metallic layers to a solid solution.
  • an electric current is applied to both of the metallic layers and the substrate.
  • the diffused solid solution on the substrate is reacted with oxygen .at an elevated temperature, for a period long enough to change the diffused solid solution to ferrite thin film body.
  • the single drawing is a graph showing the characteristics of pulse drive currents applied to a CuMn ferrite thin film body, produced in accordance with the present invention.
  • EXAMPLE Platinum wire is used as a substrate. Layers of metal are applied to the wire, by electrochemical plating, in the order of Fe (Iron), Cu (Copper), and Mn (Manganese). The following table shows the conditions and The plated platinum wire was then placed into a chamber filled with inert gas (containing oxygen less than 2%), such as nitrogen gas or argon gas. The temperature in the chamber was elevated, during 1 hour, up to a temperature higher than 800C but lower than 1083C, which is the melting point of Cu. Keeping the chamber at the elevated temperature for an additional 30 minutes, electric current of 1-3 ampere was applied to the platinum wire, as the cathode, and to the plated metallic layers. A diffusion reaction occurred and the metal layers were changed to a solid solution. Then the temperature inside the chamber was lowered to room temperature, the duration of the temperature lowering being 1 hour.
  • inert gas containing oxygen less than 2%
  • the inert gas was removed and oxygen substituted (purity of more than percent).
  • the chamber was then heated during one hour up to 1 150C.
  • the oxidization of the diffused solid solution was effected at the elevated temperature for an additional minutes, during which the solid solution was changed to ferrite thin film body. Thereafter, the produced ferrite thin film body was gradually cooled in air, the cooling occurring for a period of one hour.
  • the Cu--Mn ferrite film body produced in accordance with the method of the present invention, has a faster switching time and an excellent rectangular magnetic characteristic and is sufficiently good to be used for magnetic memory elements.
  • the method according to the present invention provides reliable ferrite thin film body having excellent magnetic characteristics.
  • a method for producing a CuMn ferrite thin film body on a non-magnetic heat-resistant substrate comprising the steps of applying Fe, Cu, and Mn respectively in layers on said substrate, subjecting said metallic layers to a diffusion reaction under inert gas at a temperature higher than 800C but lower than 1083C, said metallic layers being thereby changed to a diffused solid solution, and subjecting said solid solution to oxidation at a temperature higher than 1083C for a sufficient time to change said solid solution to a ferrite body.
  • a method for producing a CuMn ferrite thin film body on a non-magnetic heat-resistant substrate comprising the steps of plating Fe, Cu, and Mn respectively in layers on said substrate, subjecting said plated metallic layers to a diffusion reaction under inert gas at a temperature higher than 800C but lower than 1083C while said plated metallic layers and said substrate as the cathode are supplied with an electric current, said metallic layers being thereby changed to a diffused solid solution, and subjecting said solid solution to oxidation at a temperature higher than 1083C for a sufficient time to change said solid solution to a ferrite body.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Coating By Spraying Or Casting (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Compounds Of Iron (AREA)
  • Laminated Bodies (AREA)
US00151069A 1970-06-11 1971-06-08 Method for producing ferrite thin film body Expired - Lifetime US3763003A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP45050454A JPS4941012B1 (de) 1970-06-11 1970-06-11

Publications (1)

Publication Number Publication Date
US3763003A true US3763003A (en) 1973-10-02

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Family Applications (1)

Application Number Title Priority Date Filing Date
US00151069A Expired - Lifetime US3763003A (en) 1970-06-11 1971-06-08 Method for producing ferrite thin film body

Country Status (4)

Country Link
US (1) US3763003A (de)
JP (1) JPS4941012B1 (de)
DE (1) DE2129164C3 (de)
GB (1) GB1350468A (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3856579A (en) * 1972-12-04 1974-12-24 Battelle Development Corp Sputtered magnetic materials comprising rare-earth metals and method of preparation
US4013534A (en) * 1974-11-12 1977-03-22 Nippon Telegraph And Telephone Public Corporation Method of making a magnetic oxide film

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4770725A (en) * 1984-11-06 1988-09-13 Raychem Corporation Nickel/titanium/niobium shape memory alloy & article
US4830262A (en) * 1985-11-19 1989-05-16 Nippon Seisen Co., Ltd. Method of making titanium-nickel alloys by consolidation of compound material
US4865666A (en) * 1987-10-14 1989-09-12 Martin Marietta Corporation Multicomponent, low density cubic L12 aluminides
JP2847177B2 (ja) * 1994-03-11 1999-01-13 科学技術庁金属材料技術研究所長 NiTi系高比強度耐熱合金

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE975050C (de) * 1951-08-22 1961-07-20 Degussa Verwendung von korrosionsfesten, naturharten Legierungen zur Herstellung von Schreibgeraetespitzen
DE1558715B2 (de) * 1966-09-09 1972-05-31 Buehler William J Legierungen mit martensitischem uebergang
DE2106687C3 (de) * 1970-02-12 1980-11-06 The Furukawa Electric Co. Ltd., Tokio Verwendung von Nickel-Titan-Legierungen

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3856579A (en) * 1972-12-04 1974-12-24 Battelle Development Corp Sputtered magnetic materials comprising rare-earth metals and method of preparation
US4013534A (en) * 1974-11-12 1977-03-22 Nippon Telegraph And Telephone Public Corporation Method of making a magnetic oxide film

Also Published As

Publication number Publication date
JPS4941012B1 (de) 1974-11-06
DE2129164A1 (de) 1971-12-16
DE2129164B2 (de) 1980-07-31
GB1350468A (en) 1974-04-18
DE2129164C3 (de) 1981-05-14

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