US3727165A - Voltage-dependent resistor - Google Patents

Voltage-dependent resistor Download PDF

Info

Publication number
US3727165A
US3727165A US00228095A US3727165DA US3727165A US 3727165 A US3727165 A US 3727165A US 00228095 A US00228095 A US 00228095A US 3727165D A US3727165D A US 3727165DA US 3727165 A US3727165 A US 3727165A
Authority
US
United States
Prior art keywords
voltage
layer
grain
grains
dependent resistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US00228095A
Other languages
English (en)
Inventor
S Hagen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
US Philips Corp
Original Assignee
US Philips Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by US Philips Corp filed Critical US Philips Corp
Application granted granted Critical
Publication of US3727165A publication Critical patent/US3727165A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors

Definitions

  • the invention relates to a voltage-dependent resistor comprising a one-grain-thick layer comprising grains, preferably semiconductive grains, embedded in an electrically insulating binder and projecting on either side from the binder, an electrode layer being applied to either side of said grain layer, said electrode layers being completely separated from each other by the grain layer and establishing contacts with the projecting parts of the grains.
  • Voltage-dependent resistors of the kind set forth are known, for example, from US. Pat. No. 3,210,831.
  • This Specification discloses a voltage-dependent resistor comprising a one-grain-thick layer of silicon carbide grains embedded in a synthetic resin and projecting on either side therefrom. This grain layer is covered on either side with a coherent electrode layer. In operation a voltage difference is' applied between these two electrode layers.
  • Such a known voltage-dependent resistor exhibits within a given voltage range a very strong, non-linear current increase with an increasing voltage.
  • voltage-dependent resistors having a one-grain-thick layer of the kind set forth this voltage range is restricted for a given grain layer to comparatively low voltage values, for example, of the order of a few volts.
  • the invention has for its object inter alia to provide a construction of a voltage-dependent resistor in which by using a one-grain-thick layer the operational voltage at which the resistor exhibits very useful, non-linear properties is considerably higher than in the known devices described above.
  • the invention is based inter alia on the recognition of the fact that by using electrode layers of particular structure on a voltage-dependent resistor having a onegrain-thick layer of grains embedded in insulating material the operational voltage of the resistor can be materially raised in dependence upon the fastening area of the connecting conductors as compared with the value obtained in the known devices, whilst in addition tappings can be provided on the voltage-dependent resistor.
  • each of the electrode layers comprises a number of island-shaped regions arranged in one or more rows, at least one island of each row partially overlapping two consecutive islands belonging to a second row and located on the opposite side of the grain layer, whilst at least two islands belonging to said rows are provided with a connecting conductor so that between these connecting conductors all parts of the grain layer located-between the overlapping parts of the islands located between the connecting conductors are connected in series with each other.
  • the present invention provides inter alia the important advantage that the satisfactory, reproducible, nonlinear properties obtained in a one-grain-thick layer at a comparatively low voltage can be utilized for obtaining a very satisfactory, non-linear current-voltage characteristic curve at higher voltages.
  • a plurality of one-grain-thick regions electrically insulated from each other in the direction of the layer a considerably better characteristic curve can be obtained than by using a layer more than one grain thick because in a voltage-dependent resistor in accordance with the invention junctions between grains having poorly reproducible and undesirable electric properties do not occur.
  • a further important advantage is that tappings can be provided on a voltage-dependent resistor in accordance with the invention, which is in general not possible with the known voltage-dependent resistors described above.
  • one or more of the further islands located between said connecting conductors may be provided with a further connecting conductor.
  • the connecting conductors may have the form of metal tracks applied to the grain layer, which may be connected, if desired, to an electrode system provided on the grain layer. In this way composite circuit arrangements can be provided on a single grain layer.
  • said rows of islands need not be rectilinear; they may form sequences of consecutive islands along curved or lines consisting of consecutive linear segments in different directions. If an electrode layer is formed by more than one row of islands, the series combination of grain layer portions in one row may be combined with the parallel connection of rows or of parts of rows with each other.
  • the grains may be made of silicon carbide or other suitable materials, preferably semiconductor materials, which together with the electrode layers applied thereto from voltage-dependent resistors having satisfactory characteristic curves. Very satisfactory, non-linear characteristic curves are obtained by using grains consisting, for example, of zinc-doped gallium phosphide or n-type silicon.
  • the grains may be homogenous, in which case the non-linear current-voltage characteristic curve is obtained by the metalsemiconductor junctions between grains and electrode layers.
  • semiconductor grains having a pnpor npn-structure are advantageously used, the two regions of the same conductivity type of which establish a contact with an electrode layer on opposite sides of the grain layer. Between electrode layers located on either side of the grain layer a breakdown voltage appears in both senses, the value of which is determined by the pn-junctions of the grains.
  • an even number of grain layer portions located between overlapping islands of a voltage-dependent resistor in accordance with the invention are connected in series between two connecting conductors. This embodiment is particularly advantageous when the current-voltage characteristic curve measured between the two electrode layers located opposite each other on either side of the grain layer is asymmetrical, which will be explained more fully hereinafter.
  • FIG. 1 is a schematic plan view of a device having a voltage-dependent resistor in accordance with the invention
  • FIG. 2 is a schematic cross sectional view of the device of FIG. 1 taken on the line 11-,
  • FIG. 3 is a schematic cross sectional view of a detail of the sectional view of FIG. 2,
  • FIG. 4 illustrates current-voltage characteristics measured on the device shown in FIGS. 1 to 3 and
  • FIG. is a schematic cross sectional view of a detail of a voltage-dependent resistor in accordance with the invention, comprising grains having a pup-structure.
  • the device shown in FIGS. 1 to 3' comprises a onegrain-thick layer 1 comprising grains 2 of a thickness of 40 to 60 u (see FIG. 3'), consisting of gallium phosphide doped with 5.10" percent by weight of zinc-The grains 2 are embedded in an electrically insulating binder 3 of polyurethane, the grains projecting on either side of the grain layer from the binder (see FIG. 3).
  • the grain layer may be made for instance by one of the methods disclosed in French Pat. specification No. 1 ,5 19,072.
  • the grain layer 1 has applied to it on one side an aluminum electrode layer 4 of a thickness of about 1 t. On the opposite side a similar electrode layer Sis applied.
  • the electrode layers 4 and 5 are completely separated from each other by the grain layer 1 and are in contact with the portions of the grains 2 projecting from the binder 3.
  • I j v The electrode layers 4 and 5 (see FIG. l),comprise each two rowsof island-shaped regions 4A, B etc. and 5A, B, etc. respectively.
  • the dimensions of the square islands are about 4.5 X 4.5 mms.
  • FIG. 1 the outlines dicated by solid lines and those of the metal layers 5 located beneath the grain layer are indicated by broken lines.
  • FIG. 2 is a sectional view of two rows of islands 4A to F and 5A to F located on opposite sides of the grain layer.
  • Each one of the islands 48 to 4F 'overlaps'partially two consecutive islands 5A to F belonging to the second row on the opposite side of the grain layer.
  • the islands 4A and SF. are provided with connecting conductors-6 and 7 (see FIG; 1). These connecting conductors are formed in this embodiment by aluminum layers located on the grain layer and connected to the islands.
  • the connecting conductors may, as an alternative, be formed by connecting wires connected to an island and not located on the grain layer. It will be apparent from the Figures that (see FIG. 2) between the connecting conductors 6 and 7 all parts 8 of the grain layer V1 (in total 11) located between the overlapping parts of the islands 4A to SF situated between the'connecting conductors 6 and 7 are connected in series with each other.
  • FIG. 4 shows by way of comparison the current-voltage characteristic curve (a), measured between the connecting conductors 6 and 7, and the current-voltage characteristic curve (b), measured across a single region 8 (FIG. 2) between opposite islands.
  • the operational voltage may be any multiple of that obtained by a voltage-dependent resistor comprising only one region 8, in accordance with the number of islands located between the conductors 6 and 7.
  • the non-linear resistance characteristics shown in FIG. 4 are obtained owing to the non-linear contact junctions between the electrode layers and the gallium phosphide grains.
  • An important advantage of the voltage dependent resistor according to the invention is that even when a plurality of one-grain-thick regions 8 are connected .in series the over-all resistance is determined substantially only by the metal-semiconductor junctions, whilst junctions between the grains themselves are avoided, which might adversely affect the reproducibility.
  • one of the islands 4 located between the conductors 6 and 7 is provided with a further connecting conductor 9, formed by a metal track.
  • This conductor 9 constitutes a tapping of the voltage-dependent resistor between the conductors 6 and 7 and isjconnected to a metal layer 10 associated with a further electrode system provided on the grain layer.
  • This electrode system is formed in this example by a further voltagedependent resistor formed by the metal layer 10, a metal layer 11 on the other side and the portion of the grain layer 1 located between the layers 10 and 11. In this way a composite circuitry, part of which is shown in FIGS. 1 to 3, is obtained on the same grain layer 1.
  • gallium'phosphide but also (preferably ntype conductive) silicon may advantageously be used for the grains,- in which case also metalsemiconductor junctions of very satisfactory current-voltage characteristic curves can be obtained.
  • Y gallium'phosphide, but also (preferably ntype conductive) silicon may advantageously be used for the grains,- in which case also metalsemiconductor junctions of very satisfactory current-voltage characteristic curves can be obtained.
  • the device described may be manufactured by subjecting a one-grain-thick layer having grains projecting on either side from the binder to an ion or electron bombardment, after which the aluminum layers 4 and 5 are vapor-deposited through a mask to form the various islands and metal tracks. After the formation of the contact between the grains and the aluminum layer by means of a short current pulse across the grain layer between the aluminum layers 4 and 5, the desired current-voltage characteristic curve is obtained. This is described in U.S. Pat. No. 3,670,214 issued June 13, 1972. Then input and output wires are connected with the suitable places, after which the assembly may be arranged in an appropriate envelope.
  • FIG. 5 is a schematic cross sectional view of a detail of a further embodiment of a voltage-dependent resistor according tothe invention.
  • the non-linear current-voltage characteristic curve is obtained by meansof pn-junctions in the grains.
  • the grains consist of silicon and have a highly doped p-type core 22, partly surrounded byan n-type layer 26 and a ptype layer 27.
  • the aluminum electrode layer 24 constitutes a practically ohmic contact with the core 22 and the aluminum layer 25 establishes a practically ohmic contact with the outermost p-type layer 27.
  • FIG. 5 only shows part of one of the grain layer regions 8 located between overlapping islands (see FIG. 2).
  • the grains have each a pn-junction 28, located between the regions 22 and 26 and a pn-junction 29 between the regions 26 and 27. Where these 'pn-junctions intersect the surface of the grains, they are covered by parts 30 of the binder 23.
  • the granular layer structure of FIG. 5 may be obtained on the basis of p-type silicon grains, in which by methods generally used in semiconductor technology an n-type layer 26 and a p-type layer 27 are diffused.
  • a one-grain-thick layer is made from these grains, which project on either side from the binder 33, after which on one side of the layer the cores 22 of the grains are exposed by etching for establishing contacts with the electrode layers applied subsequently.
  • a voltage-dependent resistor comprising a onegrain-thick layer of semiconductor grains, embedded in an electrically insulating binder and projecting on either side from the binder, an electrode layer being applied to either side of this grain layer in contact with projecting grain parts, said electrode layers being completely separated from each other by the grain layer and exhibiting between them a non-linear voltage-current characteristic, each of the electrode layers comprising a plurality of island-shaped regions arranged in at least one row, at least one island of each row overlapping partially two consecutive islands belonging to a second row on the opposite side of the grain layer, while at least two islands belonging to said rows are provided with a connecting conductor so that between these connecting conductors all parts of the grain layer located between the overlapping parts of the islands located between the connecting conductors are connected in series with each other.
  • a vol age-dependent resistor comprising a onegrain-thick layer of semiconductor grains, embedded in an electrically insulating binder and projecting on either side from the binder, an electrode layer being applied to either side of this grain layer in contact with projecting grain parts, said electrode layers being completely.
  • each of the electrode layers comprising a plurality of island-shaped regions arranged in at least one row, at least one island of each row overlapping partially two consecutive islands belonging to a second row on the opposite side of the grain layer, while at .least two islands belonging to said rows are provided with a connecting conductor so that between these connecting conductors all parts of the grain layer located between the overlapping parts of the islands located between the connecting conductors are connected in series with each other, while between two connecting conductors an even number of parts of the grain layer located between overlapping islands are connected in series.
  • a voltage-dependent resistor as claimed in claim 1- wherein the grains have a npn structure, the two regions of the same conductivity type of said grains being in contact with an electrode layer on opposite sides of the grain layer.
  • a voltage-dependent resistor of claim 1 wherein at least one of the islands located between said connecting conductors is provided with a further connecting conductor.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Thermistors And Varistors (AREA)
  • Non-Adjustable Resistors (AREA)
US00228095A 1969-02-01 1972-02-22 Voltage-dependent resistor Expired - Lifetime US3727165A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6901659A NL6901659A (enrdf_load_stackoverflow) 1969-02-01 1969-02-01

Publications (1)

Publication Number Publication Date
US3727165A true US3727165A (en) 1973-04-10

Family

ID=19806042

Family Applications (1)

Application Number Title Priority Date Filing Date
US00228095A Expired - Lifetime US3727165A (en) 1969-02-01 1972-02-22 Voltage-dependent resistor

Country Status (7)

Country Link
US (1) US3727165A (enrdf_load_stackoverflow)
BE (1) BE745303A (enrdf_load_stackoverflow)
DE (1) DE2003025A1 (enrdf_load_stackoverflow)
FR (1) FR2033815A5 (enrdf_load_stackoverflow)
GB (1) GB1300096A (enrdf_load_stackoverflow)
NL (1) NL6901659A (enrdf_load_stackoverflow)
SE (1) SE352766B (enrdf_load_stackoverflow)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3959763A (en) * 1975-04-17 1976-05-25 General Signal Corporation Four terminal varistor
US4300115A (en) * 1980-06-02 1981-11-10 The United States Of America As Represented By The Secretary Of The Army Multilayer via resistors
US4523811A (en) * 1981-01-16 1985-06-18 Kabushiki Kaisha Suwa Seikosha Liquid crystal display matrix including a non-linear device
US4845462A (en) * 1987-07-10 1989-07-04 U.S. Philips Corporation Linear integrated resistor
US5578765A (en) * 1992-09-18 1996-11-26 Incontrol Solutions, Inc. Transducer array
JP2013219091A (ja) * 2012-04-04 2013-10-24 Otowa Denki Kogyo Kk 非線形抵抗素子
JP2013219092A (ja) * 2012-04-04 2013-10-24 Otowa Denki Kogyo Kk 非線形抵抗素子
US20180295707A1 (en) * 2016-05-02 2018-10-11 Jacob Gitman Method of and system for reducing or substantially zeroing electrical potential
US11660069B2 (en) 2017-12-19 2023-05-30 Koninklijke Philips N.V. Combining image based and inertial probe tracking

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4785276A (en) * 1986-09-26 1988-11-15 General Electric Company Voltage multiplier varistor

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3212043A (en) * 1961-04-11 1965-10-12 Ass Elect Ind Low voltage non-linear electrical resistance elements and method of manufacture thereof
US3210831A (en) * 1961-12-15 1965-10-12 Ass Elect Ind Method of making a non-linear resistance element
US3448246A (en) * 1967-10-09 1969-06-03 Fritz Armbruster Electrical heating mat with automatic temperature control

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3212043A (en) * 1961-04-11 1965-10-12 Ass Elect Ind Low voltage non-linear electrical resistance elements and method of manufacture thereof
US3210831A (en) * 1961-12-15 1965-10-12 Ass Elect Ind Method of making a non-linear resistance element
US3448246A (en) * 1967-10-09 1969-06-03 Fritz Armbruster Electrical heating mat with automatic temperature control

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3959763A (en) * 1975-04-17 1976-05-25 General Signal Corporation Four terminal varistor
US4300115A (en) * 1980-06-02 1981-11-10 The United States Of America As Represented By The Secretary Of The Army Multilayer via resistors
US4523811A (en) * 1981-01-16 1985-06-18 Kabushiki Kaisha Suwa Seikosha Liquid crystal display matrix including a non-linear device
US4845462A (en) * 1987-07-10 1989-07-04 U.S. Philips Corporation Linear integrated resistor
US5578765A (en) * 1992-09-18 1996-11-26 Incontrol Solutions, Inc. Transducer array
US5583303A (en) * 1992-09-18 1996-12-10 Incontrol Solutions, Inc. Transducer array
JP2013219091A (ja) * 2012-04-04 2013-10-24 Otowa Denki Kogyo Kk 非線形抵抗素子
JP2013219092A (ja) * 2012-04-04 2013-10-24 Otowa Denki Kogyo Kk 非線形抵抗素子
CN103563015A (zh) * 2012-04-04 2014-02-05 音羽电机工业株式会社 非线性电阻元件
CN103563014A (zh) * 2012-04-04 2014-02-05 音羽电机工业株式会社 非线性电阻元件
US20140125449A1 (en) * 2012-04-04 2014-05-08 Otowa Electric Co., Ltd. Non-linear resistive element
EP2709116A4 (en) * 2012-04-04 2014-10-08 Otowa Electric Co Ltd NONLINEAR RESISTANCE ELEMENT
EP2704158A4 (en) * 2012-04-04 2014-10-22 Otowa Electric Co Ltd NONLINEAR RESISTANCE ELEMENT
US8902039B2 (en) 2012-04-04 2014-12-02 Otowa Electric Co., Ltd. Non-linear resistive element
US9007167B2 (en) * 2012-04-04 2015-04-14 Otowa Electric Co., Ltd. Non-linear resistive element
CN103563014B (zh) * 2012-04-04 2017-09-01 音羽电机工业株式会社 非线性电阻元件
US20180295707A1 (en) * 2016-05-02 2018-10-11 Jacob Gitman Method of and system for reducing or substantially zeroing electrical potential
US11660069B2 (en) 2017-12-19 2023-05-30 Koninklijke Philips N.V. Combining image based and inertial probe tracking

Also Published As

Publication number Publication date
GB1300096A (en) 1972-12-20
NL6901659A (enrdf_load_stackoverflow) 1970-08-04
SE352766B (enrdf_load_stackoverflow) 1973-01-08
BE745303A (fr) 1970-07-30
DE2003025A1 (de) 1970-08-06
FR2033815A5 (enrdf_load_stackoverflow) 1970-12-04

Similar Documents

Publication Publication Date Title
US3476993A (en) Five layer and junction bridging terminal switching device
US3029366A (en) Multiple semiconductor assembly
US2721965A (en) Power transistor
US2967793A (en) Semiconductor devices with bi-polar injection characteristics
JPS589366A (ja) トランジスタ
US3936863A (en) Integrated power transistor with ballasting resistance and breakdown protection
US3727165A (en) Voltage-dependent resistor
US3114867A (en) Unipolar transistors and assemblies therefor
US3234441A (en) Junction transistor
US3575646A (en) Integrated circuit structures including controlled rectifiers
US3419767A (en) Controllable electrical resistance
GB1097413A (en) Improved semiconductor devices
US4157561A (en) High power transistor
US2991371A (en) Variable capacitor
US3097336A (en) Semiconductor voltage divider devices
US3210563A (en) Four-layer semiconductor switch with particular configuration exhibiting relatively high turn-off gain
US4291325A (en) Dual gate controlled thyristor with highly doped cathode base grid covered with high resistivity base layer
US3725753A (en) Inverse gate semiconductor controlled rectifier
US3755722A (en) Resistor isolation for double mesa transistors
US3654531A (en) Electronic switch utilizing a semiconductor with deep impurity levels
US3612964A (en) Mis-type variable capacitance semiconductor device
US3525020A (en) Integrated circuit arrangement having groups of crossing connections
US3675091A (en) Planar p-n junction with mesh field electrode to avoid pinhole shorts
US3434023A (en) Semiconductor switching devices with a tunnel junction diode in series with the gate electrode
US3488528A (en) Integrated circuit