US3725836A - Thick film varistor and method for making the same - Google Patents

Thick film varistor and method for making the same Download PDF

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Publication number
US3725836A
US3725836A US00146624A US3725836DA US3725836A US 3725836 A US3725836 A US 3725836A US 00146624 A US00146624 A US 00146624A US 3725836D A US3725836D A US 3725836DA US 3725836 A US3725836 A US 3725836A
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United States
Prior art keywords
thick film
weight percent
varistor
zinc oxide
glass
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Expired - Lifetime
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US00146624A
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English (en)
Inventor
M Aoki
Y Iida
M Wada
K Nishimoto
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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/065—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
    • H01C17/06506—Precursor compositions therefor, e.g. pastes, inks, glass frits
    • H01C17/06513—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component
    • H01C17/06533—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component composed of oxides
    • H01C17/06546—Oxides of zinc or cadmium
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49082—Resistor making
    • Y10T29/49099—Coating resistive material on a base

Definitions

  • This invention relates to thick film varistor having finely divided particles of zinc oxide dispersed in glass and a pair of electrodes applied to said thick film and to a method for making the same.
  • varistors such as silicon carbide varistor, silicon diode and selenium varistor.
  • a varistor is defined as a non-ohmic resistor the electrical resistance of which varies with the applied voltage.
  • the electric characteristics of such a varistor are expressed by the following equation:
  • V is the voltage across the varistor
  • I is the current flowing through the varistor
  • C is a constant equivalent to the electrical resistance at a given voltage
  • n is a numerical value greater than 1.
  • the value which it is desired that C have depends upon the particular use to which the varistor is to be put. It is ordinarily desirable that the value of n be as large as possible since this exponent determines the degree to which the varistor departs from ohmic characteristics.
  • V is defined as a voltage at a flowing current of I, milliampere through the varistor.
  • the varistor voltage referred to hereinafter is a voltage at milliamperes of flowing current.
  • the value of n is calculated from the relation 1:
  • V, and V are the voltages at the currents I and I respectively.
  • a principal object of this invention is to provide a thick film varistor which can be fired on an insulating base.
  • Another object of this invention is to provide a method for making a thick film varistor.
  • a thick film varistor having a thick film of finely divided particles of zinc oxide dispersed in a glass frit which bonds the par-- ticles together, and by providing electrodes on the thick film.
  • the varistor can be made by preparing a paste of the zinc oxide particles, the frit, and a liquid vehicle, applying the paste to an insulating base, and' heating the paste to evaporate the liquid vehicle and then melt the particles of frit to bond the particles of zinc oxide together, and thereafter applying the electrodes.
  • one electrode can be applied to the insulating base, the thick film formed thereon, and a second electrode applied to the surface of the thick film.
  • FIG. 1 is a cross section, on greatly enlarged scale, of
  • FlG. 2 is a cross section, on a greatly enlarged on a highly exaggerated scale, of a varistor according to another embodiment of the present invention.
  • a thick film varistor according to the present invention comprises a thick film 3 applied to an insulating base 1 and a pair of electrodes 2 and 2.
  • Said thick film 3 has finely divided particles of zinc oxide 4 dispersed in glass frit 5.
  • the glass 5 is a bonding material for finely divided particles of zinc oxide 4 and may be composed of any glass capable of bonding said finely divided particles of zinc oxide 4 upon hardening.
  • An operable composition for said thick film 3 is 30 to 95 wt.% of finely divided particles of zinc oxide and the remainder glass.
  • a high amount of glass makes the electrical resistance of the resultant thick film 3 higher and a lower amount of glass results in poorer adherence of the thick film to the insulating base.
  • FIG. 2 The structure of the thick film varistor of FIG. 1 can be modified as shown in FIG. 2.
  • a thick film 3 having finely divided particles of zinc oxide 4 dispersed in glass frit 5 is sandwiched between two electrodes 2 and 2 one of which is formed on an insulating base 1.
  • said one electrode 2 formed on said insulating base may be replaced by a suitable and available metal plate such as silver, platinum, titanium or nickel.
  • a method for making a thick film varistor contemplated by the present invention comprises the following steps; providing a varistor paste having finely divided particles of zinc oxide and finely divided particles of glass frit, as a solid ingredients, dispersed in a liquid vehicle; applying said varistor paste to an insulating base; heating the applied varistor paste to evaporate said liquid vehicle and to melt and finely divided particles of glass frit whereby the melted glass frit bonds said finely divided particles of zinc oxide together and forms a thick film upon hardening; and providing said thick film with two electrodes.
  • This method can be modified in the following way:
  • the varistor paste is applied to an electrode formed on an insulating base or to a metal plate acting as an electrode.
  • the subsequentsteps are similar to those mentioned above.
  • Said varistor paste can be prepared by dispersing a uniform mixture of glass frit powder and zinc oxide powder, as solid ingredients, homogeneously in a liquid vehicle.
  • the weight proportion of zinc oxide powder to glass frit powder in said mixture is 30 to 95 wt.% of zinc oxide and 5 to wt.% of glass frit powder.
  • the liquid vehicle may vary widely in composition. Any inert liquid can be employed for this purpose, for example, water, organic solvents, with or without thickening agents, stabilizing agents, or the like, for example, methyl, ethyl, butyl, propyl or higher alcohols, the corresponding esters such as the carbitol acetates, propionates, etc., the terpenes and liquid resins, for example, pine oil, alpha-terpenol, and the like, and other liquids without limitation, the function of the liquid vehicle being mainly to form a liquid or paste of the desired consistency for application purposes.
  • inert liquid can be employed for this purpose, for example, water, organic solvents, with or without thickening agents, stabilizing agents, or the like, for example, methyl, ethyl, butyl, propyl or higher alcohols, the corresponding esters such as the carbitol acetates, propionates, etc., the terpenes and liquid resins, for
  • the liquid vehicles may contain volatile liquids to promote fast setting after application, or they may contain waxes, thermoplastic resins such as cellulose acetate butyrate, or wax-like materials which are thermofluid by nature whereby the composition can be applied to an insulating base while at an elevated temperature so as to set immediately upon contact with the insulating base.
  • the amount of said liquid vehicle relative to solid ingredient can vary with the manner of application.
  • the operable weight ratio of liquid vehicle to solid ingredient is to 45 wt.% of liquid vehicle and 55 to 90 wt.% of
  • An advantageous weight ratio is to 30 wt.% of liquid vehicle and 70 to 85 wt.% of solid ingredient. it is preferable that the viscosity of the resultant paste be 500 to 2,000 poises.
  • the varistor paste is applied in a uniform thickness to the insulating base or to the electrode surface. This may be done by any application method such as a stencil, spray, print, dip or brush method.
  • the varistor paste applied to the insulating base is dried, if necessary, to remove the liquid vehicle and then fired in an electrical furnace at a temperature at which the glass frit fuses so as to bond the zinc oxide powder particles and to adhere firmly to the insulating base.
  • the firing temperature may vary with the composition of glass frit. It is preferable to adjust the firing temperature so as to be 400 to 850C.
  • Finelydivided zinc oxide powder is prepared by pul verization of sintered zinc oxide which is heated at a temperature of 1100 to l500C for 0.5 to 10 hours.
  • the pulverization of zinc oxide powder can be achieved in accordance with well known techniques.
  • Said sintered zinc oxide may be pre-crushed into granules having a diameter of few millimeters by a crushing machine equipped with a steel or iron pestle and mortar.
  • the granules are further pulverized into fine powder with a fine crusher such as a ball mill or vibration mill etc.
  • the preferable particle size of the zinc oxide powder is 0.5 to 10 microns.
  • n is improved when said zinc oxide powder has incorporated therewith 0.1 to 8 mole percent of one member selected from the group consisting of bismuth oxide (Bi- 0 lead oxide (PhD) and barium oxide (BaO).
  • the incorporation can be achieved by a well known ceramic technique. A mixture of zinc oxide powder and additives of a given composition is heated at a high temperature of ll00 to 1500C and then crushed into fine powder in a manner similar to that described above.
  • An operable glass frit for use in the varistor paste can be borosilicate glass, lead borosilicate glass, zinc leadborate glass and bismuth borosilicate glass. Most advantageous is zinc leadborate frit having a composition consisting essentially of 55 to 85 wt.% of PbO, 10 to wt.% of H 0 and 5 to 20 wt.% of ZnO.
  • Said glass'frit can be prepared in accordance with a per se well known glass frit technique.
  • a mixtureincluding desired starting materials is heated to a high temperature so as to form a glass frit and is quenched in I cle size for the particles of the glass frit is 0.5 to 20 microns.
  • the electrodes 2 and 2' may be formed by any suitaelectroless-plating of nickel metal. It has been discovered according to the invention that a higher n is obtained by using a silver paint electrode which has finely divided particles of silver'dispersed in bonding glass. Care should be taken that the softening temperature of said bonding glass is not higher than that of the glass frit of the varistor paste.
  • the silver paint is prepared by dispersing a mixture of silver powder and bonding glass frit powder in a liquid vehicle. Said mixture is preferablycomposed of 50 to 95 wt.% of silver powder and 5 to 50 wt.% of bonding glass frit powder.
  • the composition of the bonding glass frit powder is controlled of 60 to 80 wt.% so that it is bismuth oxide, 10 to 20 wt.% of boron oxide and 10 to 20 wt.% of silica.
  • the method of preparing the silver paint are essentially similar to those for the varistor paste mentioned above.
  • Example 1 I of B 0 and 13.8 wt.% of ZnO is pulverized into a fine powder having an average particle size of 3 microns.
  • a uniform mixture of wt.% zinc oxide powder and 25 wt.% of glass frit is prepared by a well known method.
  • the uniform mixture of these solid ingredients is mixed well with a liquid vehicle consisting of '15 wt.% of ethyl cellulose and 85 wt.% of carbitol acetate to form a varistor paste having a composition consisting of wt.% of solid ingredient and 20 wt.% of liquid vehicle.
  • silver paint No. 6730 (silver paint l) from Dupont Co. in U.S.A. is appliedto an aluminum oxide ceramic insulating base by a stainless steel screen stencil with a 200 mesh and is fired in air at 800C for 10 minutes by a tunnel type kiln so as to form a silver paint electrode.
  • the varistor paste is applied to said silver paint electrode and is fired in air at 800C for 10 minutes by the tunnel kiln.
  • the resultant thick film has a thickness of about 20 microns.
  • Thesilver paint 1 is applied to the varistor film and is fired at 800C in a manner similar to that described above to form an upper silver paint electrode having an active area of 6X6 mm.
  • the thick film varistor has electrical properties shown for sample No. 1 in Table 1.
  • Example 2 A varistor paste similar to that or Example l is apthick film varistor are shown for sample No. 2 in Table l.
  • Example 3 differs from Example 2 only in that it has a different electrode from Example 2. After the thick film has been formed on the insulating base in a manner similar to that of Example 2, the thick film is provided with two electrodes of zinc film prepared by a well known vacuum evaporation technique. The dimensions of the electrodes are similar to that of Example 2.
  • Example 4 Compositions of zinc oxide with 2 mol of bismuth oxide (Bi- 2 mol of lead oxide (PbO), and 2 mol of barium oxide (8210), respectively, are heated at l350C for 1 hour and then pulverized into fine powder having an average particle size of 2 microns by using a stamp mill for pre-crush and a ball mill for fine pulverization.
  • the zinc oxide powder compositions are used for formation of thick film varistors.
  • the other formation steps are exactly similar to those of example
  • the resultant electrical characteristics of n and V of these thick film varisto rs are shown for samples No. 4, 5 and 6 in Table 1.
  • Example 5 utilizes a different silver paint from Example l.
  • the silver paint (silver paint 2) is composed of bonding glass frit powder, liquid vehicle and silver particles having in an average particle size of 1 micron. The weight proportions of said silver particles and glass frit are 85 wt.% and wt.%, respectively. The amount of liquid vehicle can be adjusted to provide a viscosity suitable for screen printing.
  • the glass frit powder is of bismuth borosilicate glass having an average particle size of 4 microns and has a a composition of 15 t.% of B 0 15 wt.% of SiO and 70 wt.% of Bi O
  • the thick film varistor is formed in the same manner as that of Example 1 by using said silver paint 2.
  • n and V of this thick film varistor is shown for sample No. 7 in Table l.
  • the silver paint 2 gives an improved n value as compared with the commercially available silver paint of Example 1.
  • a thick film varistor consisting essentially of a thick film having 30 to 95 weight percent of finely divided particles of zinc oxide dispersed in 5 to weight percent of glass frit, said zinc oxide having incorporated therein 0.1 to 8 mole percent of one member selected from the group consisting of bismuth oxide, lead oxide and barium oxide, and a pair of electrodes applied to said thick film, said finely divided particles of zinc oxide being obtained by heating zinc oxide powder at a temperature of 1 100 to l500C and crushing the heated zinc oxide into finely divided particles.
  • a thick film varistor consisting essentially of a thick film having 30 to 95 weight percent of finely divided particles of zinc oxide dispersed in 5 to 70 weight percent of glass frit and a pair of electrodes applied to said thick film, said finely divided particles of zinc oxide being obtained by heating zinc oxide powder at a temperature of l l00 to l500C and crushing the heated zinc oxide into finely divided particles.
  • a method for making a thick film varistor comprising providing a varistor paste comprising, as solid ingredients, 30 to 95 weight percent of finely divided particles of zinc oxide and 5 to weight percent of finely divided particles of glass frit dispersed in a liquid vehicleyapplying said varistor paste to an insulating base; heating the applied varistor paste to evaporate said liquid vehicle and to melt said finely divided particles of glass frit, whereby the melted glass frit bonds said finely divided particles of zinc oxide together and 10.
  • saidzinc leadborate glass consists essentially of 55 to 85 weight percent of lead oxide, 10 to weight percent of boron oxide and 5 to 20 weight percent of, zinc oxide.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Thermistors And Varistors (AREA)
US00146624A 1971-05-21 1971-05-25 Thick film varistor and method for making the same Expired - Lifetime US3725836A (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
GB1637571 1971-05-21
US14662471A 1971-05-25 1971-05-25
FR717119069A FR2138453B1 (enExample) 1971-05-21 1971-05-26
NL717107731A NL150936B (nl) 1971-05-21 1971-06-04 Werkwijze voor het vervaardigen van een varistor van het dikke-film-type.

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US (1) US3725836A (enExample)
FR (1) FR2138453B1 (enExample)
GB (1) GB1346851A (enExample)
NL (1) NL150936B (enExample)

Cited By (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4001757A (en) * 1973-08-14 1977-01-04 Matsushita Electric Industrial Co., Ltd. Method for detecting a reducing material in a gas phase
DE2627930A1 (de) * 1975-06-23 1977-01-13 Gen Electric Verfahren zur herstellung von dickfilm-varistoren aus metalloxiden
US4041436A (en) * 1975-10-24 1977-08-09 Allen-Bradley Company Cermet varistors
US4064475A (en) * 1976-07-12 1977-12-20 Allen-Bradley Company Thick film varistor and method of making the same
US4069465A (en) * 1976-07-12 1978-01-17 Allen-Bradley Company Cylindrical varistor and method of making the same
DE2740808A1 (de) * 1976-09-13 1978-03-16 Gen Electric Metalloxydvaristor
DE2735484A1 (de) * 1977-08-05 1979-02-15 Siemens Ag Verfahren zur herstellung von dickfilm-varistoren
DE2921497A1 (de) * 1978-07-20 1980-01-31 Hermsdorf Keramik Veb Substrat fuer keramische halbleiterwiderstaende und herstellungsverfahren
US4333861A (en) * 1976-11-26 1982-06-08 Matsushita Electric Industrial Co., Ltd. Thick film varistor
US4460622A (en) * 1981-02-27 1984-07-17 Taiyo Yuden Co., Ltd. Electroconductive paste to be baked on ceramic bodies to provide capacitors, varistors or the like
US4460624A (en) * 1981-09-04 1984-07-17 Thomson-Csf Process for the manufacture of thick layer varistors on a hybrid circuit substrate
US4946709A (en) * 1988-07-18 1990-08-07 Mitsubishi Denki Kabushiki Kaisha Method for fabricating hybrid integrated circuit
US5059570A (en) * 1989-08-17 1991-10-22 Bp Chemicals Limited Process for preparing a vanadium/titanium based catalyst suitable for olefin polymerization
US5248452A (en) * 1989-07-11 1993-09-28 Ngk Insulators, Ltd. Process for manufacturing a voltage non-linear resistor
US5250229A (en) * 1991-10-10 1993-10-05 E. I. Du Pont De Nemours And Company Silver-rich conductor compositions for high thermal cycled and aged adhesion
US5250281A (en) * 1989-07-11 1993-10-05 Ngk Insulators, Ltd. Process for manufacturing a voltage non-linear resistor and a zinc oxide material to be used therefor
US5269971A (en) * 1989-07-11 1993-12-14 Ngk Insulators, Ltd. Starting material for use in manufacturing a voltage non-linear resistor
US5594406A (en) * 1992-02-25 1997-01-14 Matsushita Electric Industrial Co., Ltd. Zinc oxide varistor and process for the production thereof
US6232144B1 (en) * 1997-06-30 2001-05-15 Littelfuse, Inc. Nickel barrier end termination and method
US20050141166A1 (en) * 2003-12-25 2005-06-30 Hidenori Katsumura Method of manufacturing ESD protection component
US20050184387A1 (en) * 2004-02-25 2005-08-25 Collins William D.Iii Ceramic substrate for a light emitting diode where the substrate incorporates ESD protection
US20070128822A1 (en) * 2005-10-19 2007-06-07 Littlefuse, Inc. Varistor and production method
US20070171025A1 (en) * 2004-04-02 2007-07-26 Hidenori Katsumura Component with countermeasure to static electricity
US20080030296A1 (en) * 2004-09-15 2008-02-07 Epcos Ag Varistor Comprising an Insulating Layer Produced From a Loading Base Glass
EP1956612A1 (en) * 2007-02-09 2008-08-13 SFI Electronics Technology Inc. Ceramic material used for protection against electrical overstress and low-capacitance multilayer chip varistor using the same
EP1993108A1 (en) * 2007-05-18 2008-11-19 Bee Fund Biotechnology Inc. Material composition having a core-shell microstructure used for a varisator
CN100585755C (zh) * 2007-06-22 2010-01-27 宏起奈米科技股份有限公司 具有双功能的突波吸收材料
CN101071666B (zh) * 2007-06-22 2010-06-09 赑丰生技股份有限公司 低容层积型晶片变阻器及其所使用的过电压保护材料
US20100189882A1 (en) * 2006-09-19 2010-07-29 Littelfuse Ireland Development Company Limited Manufacture of varistors with a passivation layer
CN101105993B (zh) * 2007-06-22 2011-08-10 赑丰生技股份有限公司 一种单层型或层积型突波吸收器的陶瓷元件材料及这种材料制作突波吸收器的方法

Families Citing this family (6)

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IE47121B1 (en) * 1977-07-29 1983-12-28 Gen Electric Stabilized varistor
US4146677A (en) * 1977-08-18 1979-03-27 Trw Inc. Resistor material, resistor made therefrom and method of making the same
AU524277B2 (en) * 1979-11-27 1982-09-09 Matsushita Electric Industrial Co., Ltd. Sintered oxides voltage dependent resistor
JPS57194479A (en) * 1981-05-25 1982-11-30 Ngk Insulators Ltd Heating element
FR2523993A1 (fr) * 1982-03-24 1983-09-30 Cables De Lyon Geoffroy Delore Pate serigraphiable a oxydes metalliques et produit obtenu avec cette pate
US5742223A (en) 1995-12-07 1998-04-21 Raychem Corporation Laminar non-linear device with magnetically aligned particles

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US3052573A (en) * 1960-03-02 1962-09-04 Du Pont Resistor and resistor composition
US3220881A (en) * 1960-11-30 1965-11-30 Gen Telephone & Elect Method of making a non-linear resistor

Patent Citations (2)

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Publication number Priority date Publication date Assignee Title
US3052573A (en) * 1960-03-02 1962-09-04 Du Pont Resistor and resistor composition
US3220881A (en) * 1960-11-30 1965-11-30 Gen Telephone & Elect Method of making a non-linear resistor

Cited By (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4001757A (en) * 1973-08-14 1977-01-04 Matsushita Electric Industrial Co., Ltd. Method for detecting a reducing material in a gas phase
DE2627930A1 (de) * 1975-06-23 1977-01-13 Gen Electric Verfahren zur herstellung von dickfilm-varistoren aus metalloxiden
US4041436A (en) * 1975-10-24 1977-08-09 Allen-Bradley Company Cermet varistors
US4064475A (en) * 1976-07-12 1977-12-20 Allen-Bradley Company Thick film varistor and method of making the same
US4069465A (en) * 1976-07-12 1978-01-17 Allen-Bradley Company Cylindrical varistor and method of making the same
DE2740808A1 (de) * 1976-09-13 1978-03-16 Gen Electric Metalloxydvaristor
US4333861A (en) * 1976-11-26 1982-06-08 Matsushita Electric Industrial Co., Ltd. Thick film varistor
DE2735484A1 (de) * 1977-08-05 1979-02-15 Siemens Ag Verfahren zur herstellung von dickfilm-varistoren
US4186367A (en) * 1977-08-05 1980-01-29 Siemens Aktiengesellschaft Thick film varistor and method of producing same
DE2921497A1 (de) * 1978-07-20 1980-01-31 Hermsdorf Keramik Veb Substrat fuer keramische halbleiterwiderstaende und herstellungsverfahren
US4460622A (en) * 1981-02-27 1984-07-17 Taiyo Yuden Co., Ltd. Electroconductive paste to be baked on ceramic bodies to provide capacitors, varistors or the like
US4460624A (en) * 1981-09-04 1984-07-17 Thomson-Csf Process for the manufacture of thick layer varistors on a hybrid circuit substrate
US4946709A (en) * 1988-07-18 1990-08-07 Mitsubishi Denki Kabushiki Kaisha Method for fabricating hybrid integrated circuit
US5248452A (en) * 1989-07-11 1993-09-28 Ngk Insulators, Ltd. Process for manufacturing a voltage non-linear resistor
US5250281A (en) * 1989-07-11 1993-10-05 Ngk Insulators, Ltd. Process for manufacturing a voltage non-linear resistor and a zinc oxide material to be used therefor
US5269971A (en) * 1989-07-11 1993-12-14 Ngk Insulators, Ltd. Starting material for use in manufacturing a voltage non-linear resistor
US5059570A (en) * 1989-08-17 1991-10-22 Bp Chemicals Limited Process for preparing a vanadium/titanium based catalyst suitable for olefin polymerization
US5250229A (en) * 1991-10-10 1993-10-05 E. I. Du Pont De Nemours And Company Silver-rich conductor compositions for high thermal cycled and aged adhesion
US5594406A (en) * 1992-02-25 1997-01-14 Matsushita Electric Industrial Co., Ltd. Zinc oxide varistor and process for the production thereof
US6232144B1 (en) * 1997-06-30 2001-05-15 Littelfuse, Inc. Nickel barrier end termination and method
US20050141166A1 (en) * 2003-12-25 2005-06-30 Hidenori Katsumura Method of manufacturing ESD protection component
US7189297B2 (en) * 2003-12-25 2007-03-13 Matsushita Electric Industrial Co., Ltd. Method of manufacturing ESD protection component
US7768754B2 (en) 2004-02-25 2010-08-03 Philips Lumileds Lighting Company, Llc Ceramic substrate for light emitting diode where the substrate incorporates ESD protection
US20050184387A1 (en) * 2004-02-25 2005-08-25 Collins William D.Iii Ceramic substrate for a light emitting diode where the substrate incorporates ESD protection
US7279724B2 (en) * 2004-02-25 2007-10-09 Philips Lumileds Lighting Company, Llc Ceramic substrate for a light emitting diode where the substrate incorporates ESD protection
US20070297108A1 (en) * 2004-02-25 2007-12-27 Philips Lumileds Lighting Company, Llc Ceramic Substrate for Light Emitting Diode Where the Substrate Incorporates ESD Protection
EP1580809A3 (en) * 2004-02-25 2008-07-09 Philips Lumileds Lighting Company LLC Ceramic substrate incorporating an ESD protection for a light emitting diode
US20070171025A1 (en) * 2004-04-02 2007-07-26 Hidenori Katsumura Component with countermeasure to static electricity
US7864025B2 (en) * 2004-04-02 2011-01-04 Panasonic Corporation Component with countermeasure to static electricity
US20080030296A1 (en) * 2004-09-15 2008-02-07 Epcos Ag Varistor Comprising an Insulating Layer Produced From a Loading Base Glass
US8130071B2 (en) * 2004-09-15 2012-03-06 Epcos Ag Varistor comprising an insulating layer produced from a loading base glass
US20070128822A1 (en) * 2005-10-19 2007-06-07 Littlefuse, Inc. Varistor and production method
US20100189882A1 (en) * 2006-09-19 2010-07-29 Littelfuse Ireland Development Company Limited Manufacture of varistors with a passivation layer
EP1956612A1 (en) * 2007-02-09 2008-08-13 SFI Electronics Technology Inc. Ceramic material used for protection against electrical overstress and low-capacitance multilayer chip varistor using the same
EP1993108A1 (en) * 2007-05-18 2008-11-19 Bee Fund Biotechnology Inc. Material composition having a core-shell microstructure used for a varisator
CN101071666B (zh) * 2007-06-22 2010-06-09 赑丰生技股份有限公司 低容层积型晶片变阻器及其所使用的过电压保护材料
CN100585755C (zh) * 2007-06-22 2010-01-27 宏起奈米科技股份有限公司 具有双功能的突波吸收材料
CN101105993B (zh) * 2007-06-22 2011-08-10 赑丰生技股份有限公司 一种单层型或层积型突波吸收器的陶瓷元件材料及这种材料制作突波吸收器的方法

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Publication number Publication date
GB1346851A (en) 1974-02-13
NL150936B (nl) 1976-09-15
FR2138453B1 (enExample) 1973-05-25
FR2138453A1 (enExample) 1973-01-05
NL7107731A (enExample) 1972-12-06

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