US3634209A - Electro deposited magnetic films - Google Patents
Electro deposited magnetic films Download PDFInfo
- Publication number
- US3634209A US3634209A US841988A US3634209DA US3634209A US 3634209 A US3634209 A US 3634209A US 841988 A US841988 A US 841988A US 3634209D A US3634209D A US 3634209DA US 3634209 A US3634209 A US 3634209A
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- US
- United States
- Prior art keywords
- magnetic
- film
- smoothing
- layer
- phosphorus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/30—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
- H01F41/302—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F41/309—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices electroless or electrodeposition processes from plating solution
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/56—Electroplating: Baths therefor from solutions of alloys
- C25D3/562—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of iron or nickel or cobalt
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/922—Static electricity metal bleed-off metallic stock
- Y10S428/923—Physical dimension
- Y10S428/924—Composite
- Y10S428/925—Relative dimension specified
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/922—Static electricity metal bleed-off metallic stock
- Y10S428/9265—Special properties
- Y10S428/928—Magnetic property
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
Definitions
- Clay ABSTRACT A process for improving the quality of a main magnetic film formed on a thick conductive substrate wherein a thin, fine grain, magnetic smoothing film of nickelphosphorus is first deposited on the substrate and then the main magnetic film is formed on the smoothing film.
- the product formed comprises at least one main magnetic film formed on a thin fine grain, magnetic nickel-phosphorus smoothing layer.
- the main magnetic film is at least three times as thick as the smoothing layer.
- the smoothing layer contains from 0.5 to 8 percent phosphorus with the balance nickel.
- Thin magnetic films are employed in many memory devices, such as closed flux structures, open flux structures, plated wires and the like.
- a thin magnetic film When a thin magnetic film is electrodeposited onto thick or large grained conducting substrates they have been found to be of poor quality, in that they had very large easy access dispersion when the films are of the order of 1,000 A or less in thickness.
- the poor quality of the prior art thin films has been attributed to the fact that a good deal of interaction takes place between the crystals in the metallic substrate and the atoms deposited onto the substrate. Thus, crystalline anisotropy is reported to play some role in increasing dispersion.
- the magnetic films deposited are of sufficiently high quality for use in fast, large magnetic memories
- various intermediate layer materials have been utilized.
- the results are generally unsatisfactory due to the difficulty of photoetching the sandwich configuration in a single step process, which would be a highly desirable improvement.
- the properties required of the intermediate layer material are that it must be conductive photoetchable with an etchant which would not severely undercut the magnetic layer, and sufficiently fine grained such that a low-dispersion, high-quality magnetic film may be superimposed upon the material.
- the present invention is particularly advantageous since the etching conditions can be milder and little or no nickel phosphide remains after etching.
- the present invention is not limited to those structures which are eventually etched and the smoothing layer of the present invention can be employed in any situation wherein one wishes to provide a high-quality magnetic layer.
- the nickel-phosphorus film may be deposited, for example, from any of the plating baths well known to those skilled in the art such as sulphate and sulphamate baths.
- the following table I gives the composition of a nickel-sulphate chloride bath by which the nickel-phosphorus film may be deposited.
- Plating is carried out at current densities 25-200 ma./cm.
- the composition of the resulting film must have at least one-half percent phosphorus and may contain up to 8 percent phosphorus. It has been found that if the film has less than one-half percent phosphorus, the desired smoothing effect is not obtained and the resulting main magnetic film thus does not have the desired properties. On the other hand, if one goes above 8 percent of phosphorus, a high-quality ultimate film can be produced from a magnetic standpoint, but the resulting film is difficult to etch and it is therefore imperative that the composition not contain over 8 percent phosphorus in order to achieve the desired results.
- a process for depositing a main anisotropic magnetic film layer it is necessary that the smoothing layer be not thicker 5 onto a thick large grain conductive substrate comprising the than one-third of the thickness of the ultimate magnetic layer. Since many storage elements include very thin magnetic layers such as 400A, it is obviously preferred to employ the thinnest possible smoothing layer in order to provide the desired ultimate structure wherein the smoothing layer does not exert an adverse effect on the ultimate magnetic film. Thus smoothing layers offrom about 50 to 200A are preferred.
- main film being at least three times as thick as the smoothing film.
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Thin Magnetic Films (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
- Magnetic Record Carriers (AREA)
- Electroplating Methods And Accessories (AREA)
Abstract
A process for improving the quality of a main magnetic film formed on a thick conductive substrate wherein a thin, fine grain, magnetic smoothing film of nickel-phosphorus is first deposited on the substrate and then the main magnetic film is formed on the smoothing film. The product formed comprises at least one main magnetic film formed on a thin fine grain, magnetic nickel-phosphorus smoothing layer. The main magnetic film is at least three times as thick as the smoothing layer. The smoothing layer contains from 0.5 to 8 percent phosphorus with the balance nickel.
Description
llnited States Patent Redwood City, Calif.
[54] ELECTRO DEPOSITED MAGNETIC FILMS 1 Claim, No Drawings [52] U.S. Cl 204/40,
29/183.5, 29/194, 29/196.6, 204/43, 340/174 [51] Int. Cl C23b 5/50 [50] Field of Search 340/ 174 QA; 204/41, 40, 43; 29/194, 183.5, 196.6; 117/239, 71 R, 71 M [56] References Cited UNlTED STATES PATENTS 3,327,297 6/1967 Croll 117/71 M X 3,355,267 11/1967 DuRose.... 29/194 3,393,982 7/1968 Fisher et a1.. 29/194 3,524,173 8/1970 Wolf 204/41 X Primary ExaminerG. L. Kaplan Attorney-Robert G. Clay ABSTRACT: A process for improving the quality of a main magnetic film formed on a thick conductive substrate wherein a thin, fine grain, magnetic smoothing film of nickelphosphorus is first deposited on the substrate and then the main magnetic film is formed on the smoothing film. The product formed comprises at least one main magnetic film formed on a thin fine grain, magnetic nickel-phosphorus smoothing layer. The main magnetic film is at least three times as thick as the smoothing layer. The smoothing layer contains from 0.5 to 8 percent phosphorus with the balance nickel.
ELECTRO DEPOSITED MAGNETIC FILMS BACKGROUND OF THE INVENTION Thin magnetic films are employed in many memory devices, such as closed flux structures, open flux structures, plated wires and the like. When a thin magnetic film is electrodeposited onto thick or large grained conducting substrates they have been found to be of poor quality, in that they had very large easy access dispersion when the films are of the order of 1,000 A or less in thickness. The poor quality of the prior art thin films has been attributed to the fact that a good deal of interaction takes place between the crystals in the metallic substrate and the atoms deposited onto the substrate. Thus, crystalline anisotropy is reported to play some role in increasing dispersion. In addition, it is well known that microscopic roughness of substrates generally leads to dispersion. Since it is very difficult to achieve a microscopically smooth surface on a metallurgically prepared metal, the deposition of good magnetic thin films on such surfaces has not been possible.
Accordingly, to provide suitable structures in prior art devices, wherein the magnetic films deposited are of sufficiently high quality for use in fast, large magnetic memories, various intermediate layer materials have been utilized. However, the results are generally unsatisfactory due to the difficulty of photoetching the sandwich configuration in a single step process, which would be a highly desirable improvement. The properties required of the intermediate layer material are that it must be conductive photoetchable with an etchant which would not severely undercut the magnetic layer, and sufficiently fine grained such that a low-dispersion, high-quality magnetic film may be superimposed upon the material.
In the past, it has been proposed to remedy this by the use of nonmagnetic layer of nickel-phosphorous which acts as a microscopic smoothing" layer of the material used as a substrate. However, it has been found that in order to make the layer nonmagnetic, it is necessary that the layer contain at least 8 percent phosphorus. The relatively high-phosphorus content makes the material difficult to etch with the usual etchants used for materials such as copper or permalloy.
SUMMARY OF THE INVENTION The present invention provides a process, and a group of materials, for depositing a magnetic material to define a fine grain main magnetic layer of the order of, for example, 400 to 4,000A thick. By way of definition, fine grain is intended herein as a grain size equal to or less than a domain wall width. An intermediate magnetic layer effects a microscopic smoothing" of any material used as a substrate, such that when the main magnetic film is deposited onto the smoothing layer it is sufficiently isolated from the effects of the substrate material to greatly improve the magnetic characteristics of the deposited main magnetic film.
It was previously thought that in order for the smoothing layer to function properly, it was necessary that this layer be nonmagnetic. It has now been found that it does not interfere with the operation of the main magnetic layer if the smoothing layer itself is magnetic providing that the smoothing layer is not over one-third the thickness of the main magnetic layer. This is achieved by lowering the quantity of phosphorus which renders the film magnetic but much easier to etch. The resulting main magnetic film has the well-defined anisotropy and low-dispersion characteristics of conventional high-quality magnetic films, which films are presently obtained only by depositing them on smooth surfaces such as glass. The capability of producing high-quality magnetic films directly on conductor substrate materials leads to an enormous relaxation of the complexity of fabricating thin magnetic film structures.
DESCRIPTION OF THE PREFERRED EMBODIMENTS In carrying out the present invention, it is first necessary to have a suitable substrate. This can be any of the usual sub strates such as glass, polyester film or metal. If the substrate material is not conductive, such as in the case of glass or polyester films. a conductive layer is first deposited thereon by a conventional sputtering or evaporating process. Naturally if the substrate is metal, no such conductive layer is necessary and polishing is sufficient preparation. After the substrate is prepared, it is placed in a first magnetic plating solution and the thin, smoothing layer of the present invention deposited thereon as is hereinafter described in detail. After the magnetic smoothing layer is deposited, the main magnetic layer is then electrodeposited thereon utilizing conventional techniques. Naturally, the process of the present invention can be applied to more than one layer so that in building up a sandwich structure, alternate magnetic smoothing layers,
5 main magnetic layers and conductive layers can be applied one over the other. The present invention particularly lends itself to the production of sandwich structures which are subsequently etched to provide a number of memory structures on a single substrate.
In those structures which are etched, the present invention is particularly advantageous since the etching conditions can be milder and little or no nickel phosphide remains after etching. However, the present invention is not limited to those structures which are eventually etched and the smoothing layer of the present invention can be employed in any situation wherein one wishes to provide a high-quality magnetic layer.
The preferred process of the invention utilizes a nickelphosphorus material as the magnetic fine grain film 16, wherein the composition contains only from one-half to 8 percent phosphorus with the balance nickel. Accordingly, the associated bath for the nickel-phosphorus plating procedure is formed of a solution containing nickel ions and phosphorus compounds such as the hypophosphite ion.
The nickel-phosphorus film may be deposited, for example, from any of the plating baths well known to those skilled in the art such as sulphate and sulphamate baths. By way of example, the following table I gives the composition of a nickel-sulphate chloride bath by which the nickel-phosphorus film may be deposited.
TABLE I NiSO -6H,O 200 g./l. NaCl l0 g./l. NaBO l5 g./l. NaH PO 'H O 3 g./l. Saccharin 8 g./l. Sodium Lauryl Sulfate l g./l.
Plating is carried out at current densities 25-200 ma./cm.
Table II illustrates a sulfamate bath which can be used in the same manner as the bath of table I.
TABLE II Ni(added as sulfamate) 50 g.ll. NaCl 15 g./l. NaBO; l5 gJl. Saccharin 5 g./l. Sodium Lauryl Sulfate l g./l. NaH,-P0 -H 0 3 g./l.
As has been stated previously, the composition of the resulting film must have at least one-half percent phosphorus and may contain up to 8 percent phosphorus. It has been found that if the film has less than one-half percent phosphorus, the desired smoothing effect is not obtained and the resulting main magnetic film thus does not have the desired properties. On the other hand, if one goes above 8 percent of phosphorus, a high-quality ultimate film can be produced from a magnetic standpoint, but the resulting film is difficult to etch and it is therefore imperative that the composition not contain over 8 percent phosphorus in order to achieve the desired results.
The thickness of the magnetic smoothing layer is also critical. It has been found that if the layer is thinner than 50A the desired smoothing is not obtained. At about 200A the effects of the film almost level off, although the film can be as thick as 1,000A with slightly improved results. In any event, in order that the smoothing layer in itself not act as a magnetic layer and thus detract from the properties of the ultimate magnetic not intended to limit the invention except as defined in the following claims.
We claim:
1. A process for depositing a main anisotropic magnetic film layer, it is necessary that the smoothing layer be not thicker 5 onto a thick large grain conductive substrate comprising the than one-third of the thickness of the ultimate magnetic layer. Since many storage elements include very thin magnetic layers such as 400A, it is obviously preferred to employ the thinnest possible smoothing layer in order to provide the desired ultimate structure wherein the smoothing layer does not exert an adverse effect on the ultimate magnetic film. Thus smoothing layers offrom about 50 to 200A are preferred.
Although the invention process and product has been described herein with reference to several particular embodiments, it is to be understood that various modifications may be made thereto within the spirit of the invention, and thus it is steps of:
a. electroplating a smoothing film of fine grain magnetic material having a grain size equal to or less than a domain wall width consisting of from 99.5 to 92 percent nickel and from one-half to 8 percent phosphorus on the substrate having a thickness offrom 50 to 200A;
b. electroplating said main anisotropic magnetic film on said smoothing film, and
c. said main film being at least three times as thick as the smoothing film.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US84198869A | 1969-07-15 | 1969-07-15 |
Publications (1)
Publication Number | Publication Date |
---|---|
US3634209A true US3634209A (en) | 1972-01-11 |
Family
ID=25286260
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US841988A Expired - Lifetime US3634209A (en) | 1969-07-15 | 1969-07-15 | Electro deposited magnetic films |
Country Status (5)
Country | Link |
---|---|
US (1) | US3634209A (en) |
JP (1) | JPS4913319B1 (en) |
DE (1) | DE2028589C3 (en) |
FR (1) | FR2051752B1 (en) |
GB (1) | GB1258205A (en) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3953654A (en) * | 1973-08-13 | 1976-04-27 | Rca Corporation | Temperature-stable non-magnetic alloy |
US4224381A (en) * | 1978-10-19 | 1980-09-23 | Poly Disc Systems, Inc. | Abrasion resistant magnetic record members |
US4268584A (en) * | 1979-12-17 | 1981-05-19 | International Business Machines Corporation | Nickel-X/gold/nickel-X conductors for solid state devices where X is phosphorus, boron, or carbon |
EP0136038A1 (en) * | 1983-08-29 | 1985-04-03 | Dynamic Disk, Inc. | Method and apparatus for producing electroplated magnetic memory disk, and the like |
US4533441A (en) * | 1984-03-30 | 1985-08-06 | Burlington Industries, Inc. | Practical amorphous iron electroform and method for achieving same |
US4581109A (en) * | 1983-12-12 | 1986-04-08 | Digital Equipment Corporation | Magnetic plated media and process thereof |
US4686151A (en) * | 1985-04-09 | 1987-08-11 | Dynamic Disk | Substrate material for magnetic recording media |
US4699695A (en) * | 1984-07-20 | 1987-10-13 | Rieger Franz Metallveredelung | Nickel plating bath |
US4786324A (en) * | 1986-01-10 | 1988-11-22 | Rieger Franz Metallveredelung | Nickel-plating bath |
US5576099A (en) * | 1990-02-09 | 1996-11-19 | International Business Machines Corporation | Inductive head lamination with layer of magnetic quenching material |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3327297A (en) * | 1963-11-07 | 1967-06-20 | Ibm | Magnetic memory element |
US3355267A (en) * | 1964-02-12 | 1967-11-28 | Kewanee Oil Co | Corrosion resistant coated articles and processes of production thereof |
US3393982A (en) * | 1962-11-08 | 1968-07-23 | Ncr Co | Ferromagnetic storage devices having uniaxial anisotropy |
US3524173A (en) * | 1967-05-22 | 1970-08-11 | Ampex | Process for electrodeposition of anisotropic magnetic films and a product formed by the process |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1353536A (en) * | 1962-01-12 | 1964-02-28 | Ibm | Magnetic film manufacturing process |
-
1969
- 1969-07-15 US US841988A patent/US3634209A/en not_active Expired - Lifetime
-
1970
- 1970-05-12 GB GB1258205D patent/GB1258205A/en not_active Expired
- 1970-06-10 DE DE2028589A patent/DE2028589C3/en not_active Expired
- 1970-06-24 JP JP45054441A patent/JPS4913319B1/ja active Pending
- 1970-07-10 FR FR707025686A patent/FR2051752B1/fr not_active Expired
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3393982A (en) * | 1962-11-08 | 1968-07-23 | Ncr Co | Ferromagnetic storage devices having uniaxial anisotropy |
US3327297A (en) * | 1963-11-07 | 1967-06-20 | Ibm | Magnetic memory element |
US3355267A (en) * | 1964-02-12 | 1967-11-28 | Kewanee Oil Co | Corrosion resistant coated articles and processes of production thereof |
US3524173A (en) * | 1967-05-22 | 1970-08-11 | Ampex | Process for electrodeposition of anisotropic magnetic films and a product formed by the process |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3953654A (en) * | 1973-08-13 | 1976-04-27 | Rca Corporation | Temperature-stable non-magnetic alloy |
US4224381A (en) * | 1978-10-19 | 1980-09-23 | Poly Disc Systems, Inc. | Abrasion resistant magnetic record members |
US4268584A (en) * | 1979-12-17 | 1981-05-19 | International Business Machines Corporation | Nickel-X/gold/nickel-X conductors for solid state devices where X is phosphorus, boron, or carbon |
EP0136038A1 (en) * | 1983-08-29 | 1985-04-03 | Dynamic Disk, Inc. | Method and apparatus for producing electroplated magnetic memory disk, and the like |
US4581109A (en) * | 1983-12-12 | 1986-04-08 | Digital Equipment Corporation | Magnetic plated media and process thereof |
US4533441A (en) * | 1984-03-30 | 1985-08-06 | Burlington Industries, Inc. | Practical amorphous iron electroform and method for achieving same |
US4699695A (en) * | 1984-07-20 | 1987-10-13 | Rieger Franz Metallveredelung | Nickel plating bath |
US4686151A (en) * | 1985-04-09 | 1987-08-11 | Dynamic Disk | Substrate material for magnetic recording media |
US4786324A (en) * | 1986-01-10 | 1988-11-22 | Rieger Franz Metallveredelung | Nickel-plating bath |
US5576099A (en) * | 1990-02-09 | 1996-11-19 | International Business Machines Corporation | Inductive head lamination with layer of magnetic quenching material |
Also Published As
Publication number | Publication date |
---|---|
DE2028589A1 (en) | 1971-02-04 |
DE2028589B2 (en) | 1973-11-15 |
GB1258205A (en) | 1971-12-22 |
JPS4913319B1 (en) | 1974-03-30 |
DE2028589C3 (en) | 1974-06-06 |
FR2051752B1 (en) | 1974-06-14 |
FR2051752A1 (en) | 1971-04-09 |
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