US3631283A - Device for producing high intensity ion beams - Google Patents

Device for producing high intensity ion beams Download PDF

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Publication number
US3631283A
US3631283A US812708A US3631283DA US3631283A US 3631283 A US3631283 A US 3631283A US 812708 A US812708 A US 812708A US 3631283D A US3631283D A US 3631283DA US 3631283 A US3631283 A US 3631283A
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United States
Prior art keywords
chamber
wall
chemical material
orifice
plasma
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Expired - Lifetime
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US812708A
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English (en)
Inventor
Guy Gautherin
Rene Masic
Robert Jean Warnecke
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Thales SA
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Thomson CSF SA
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Publication date
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/08—Ion sources; Ion guns using arc discharge
    • H01J27/10—Duoplasmatrons ; Duopigatrons
    • H01J27/12—Duoplasmatrons ; Duopigatrons provided with an expansion cup

Definitions

  • ABSTRACT A gas or vapor is ionized by passing it through a [5 I] Int. Cl ..II01j 17/26, plasma j h d plasma f example; the ionization takes 1/00 place in an enclosure, the wall of which either contains devices for injecting the gas or vapor to be ionized, or devices for vaporizing by local heating solid samples of the same substance.
  • SHEET 2 OF 2 DEVICE FOR PRODUCING IIIGII INTENSITY ION BEAMS It may be necessary to produce high intensity positive ion beams of high geometrical and energetic definition
  • duoplasmatron devices make it possible to obtain from a gas, such as hydrogen for example, ion beams of the kind in question.
  • the duoplasmatron proves useless, in particular because of the poor ionization efficiency and of the contamination of and deposits produced on the electrodes.
  • a system for producing high intensity ion beams by electric charge exchange reactions between a plasma beam and a chemical material comprising a reaction chamber in which said charge exchange takes place, this chamber having an input orifice for said plasma beam introduction, means for introducing said chemical material in gaseous form into said beam, and an output orifice for the exit of the reaction products created in said chamber.
  • FIG. 1 illustrates diagrammatically a system according to the invention
  • the invention provides for a metal chamber 3 with an input orifice 2 and output orifice 5, a duct 4, connected to an external reservoir and opening into the chamber 3, an arrangement 6 for generating a magnetic field in a direction perpendicular to the plane of FIG. 1 beyond the orifice 5, and finally a metal cylinder 7 with an orifice 15, located beyond the zone of the magnetic field, its potential in relation to the chamber being determined by a voltage source 16.
  • the plasma a mixture of hydrogen ions and electrons which is created by any known means at 1, for example by a duoplasmatron 20, is injected through the orifice 2 into the chamber 3 which constitutes a volume of quasi-constant potential, where the injected plasma expands to form a kind of bubble, thus forming an expansion chamber.
  • the element which is to be ionized for example in gaseous form.
  • the electrons of the plasma ionize the gas G by collision, extracting an electron from it in accordance with the following relationship:
  • the hydrogen ions of the plasma also ionize the gas G by charge exchange, in accordance with the relationship:
  • the plasma beam is polluted by a number of hydrogen ions, which have not been involved in the above reaction, and it can be purified by using an appropriate separator, for example, a magnet 6, so that said ions describe trajectories such as those indicated by 8 while the useful ions, are only slightly deflected and describe trajectories such as those indicated by 9.
  • an appropriate separator for example, a magnet 6, so that said ions describe trajectories such as those indicated by 8 while the useful ions, are only slightly deflected and describe trajectories such as those indicated by 9.
  • the undesired electrons may be extracted from it by arranging on its trajectory a metal electrode of cylinder from 7, raised to an appropriate potential vis-a-vis the expansion chamber so as to pick up the free electrons contained in the beam.
  • the injection of the gas or vapor for ionization in accordance with the present invention, can be carried out in a variety of ways depending upon its nature.
  • FIG. I illustrates the device corresponding to a first method which will be termed cold method" and in which, as already indicated, the gas is directly introduced through a duct 4 into the expansion chamber 3; this is the case, for example, of oxygen and hydrocarbons.
  • FIG. 2 relates to the case of a vapor obtained from a metal body for example; the vapor is developed externally of the chamber in a separate enclosure prior to being directed into the duct 4. In this way a vapor jet can be produced with traverses the expansion chamber, for example transversely and whose kinetic energy is absorbed by a condensation collector 10 located opposite the orifice of the duct 4.
  • FIG. 3 relates to another method in which the vapor is produced from a given chemical element directly within the chamber 3.
  • a location 11 is created in the expansion chamber and it is there that the element is placed in the solid state. If its vapor pressure is high it can be vaporized by the heat introduced by the plasma bubble itself and this is the case, for example, with lithium in powder form, which vaporizes easily at around 200 C.
  • FIG. 4 illustrates an example of the device in which use is made of the .loule effect, a heater filament 13 being located in the wall of the chamber 3.
  • a heater filament 13 being located in the wall of the chamber 3.
  • electron bombardment of the wall from a hot cathode l4 of directly or indirectly heated kind and raised to a negative potential with respect to the wall may be used.
  • a cavity or channel 12 is formed in the wall of the expansion chamber 3 as shown in FIG. 6.
  • a system for producing high intensity ion beams by electric charge exchange reactions between a plasma beam and a chemical material comprising a duoplasmatron device for production of said plasma beam,
  • reaction expansion chamber in which said charge exchange takes place, said chamber having on a side a wall separating it from said duoplasmatron device, said wall having an orifice for the introduction of said plasma beam, means for introducing said chemical material in gaseous form into said chamber, and there being on the opposite side of said chamber an output wall with an orifice for the exit of the reaction products created in said chamber,
  • said expansion chamber being dimensioned for allowing said beam to expand as a bubble and means, downstream said output orifice, for extracting from said reaction products a pure ion beam of said chemical material.
  • heating means is an electron source placed in front of at least a portion of said chamber wall and raised to a negative potential with respect to it.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Combustion & Propulsion (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
US812708A 1968-04-09 1969-04-02 Device for producing high intensity ion beams Expired - Lifetime US3631283A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR147478 1968-04-09

Publications (1)

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US3631283A true US3631283A (en) 1971-12-28

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US812708A Expired - Lifetime US3631283A (en) 1968-04-09 1969-04-02 Device for producing high intensity ion beams

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US (1) US3631283A (enrdf_load_stackoverflow)
DE (1) DE1917843C3 (enrdf_load_stackoverflow)
FR (1) FR1585902A (enrdf_load_stackoverflow)
GB (1) GB1268941A (enrdf_load_stackoverflow)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3789253A (en) * 1971-07-06 1974-01-29 Thomson Csf Crucible for vaporizing chemically active elements method of manufacturing the same and ion source including said crucible
US3890535A (en) * 1971-10-13 1975-06-17 Anvar Ion sources
US3980916A (en) * 1975-07-22 1976-09-14 The United States Of America As Represented By The United States Energy Research And Development Administration Beam limiter for thermonuclear fusion devices
EP0713239A1 (en) * 1994-11-15 1996-05-22 Eaton Corporation Ion generating source for use in an ion implanter
US11031205B1 (en) 2020-02-04 2021-06-08 Georg-August-Universität Göttingen Stiftung Öffentlichen Rechts, Universitätsmedizin Device for generating negative ions by impinging positive ions on a target

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19747421A1 (de) 1997-10-27 1999-04-29 Sf Koop Gmbh Beton Konzepte (Beton-)Pflasterstein, Bausatz aus (Beton-)Pflastersteinen und Vorrichtung zum Herstellen derselben
US6545419B2 (en) * 2001-03-07 2003-04-08 Advanced Technology Materials, Inc. Double chamber ion implantation system

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2507652A (en) * 1940-10-04 1950-05-16 Cornell Res Foundation Inc Ion source
US3287598A (en) * 1964-01-02 1966-11-22 High Voltage Engineering Corp Ion source having an expansion cup for effecting beam divergence
US3288993A (en) * 1963-11-08 1966-11-29 James F Steinhaus Plasma particle separator and analyzer having a grid structure consisting of linear tubular portions
US3332870A (en) * 1962-10-08 1967-07-25 Mhd Res Inc Method and apparatus for effecting chemical reactions by means of an electric arc
US3387218A (en) * 1964-05-06 1968-06-04 Trw Inc Apparatus for handling micron size range particulate material
US3476968A (en) * 1966-12-19 1969-11-04 Hitachi Ltd Microwave ion source

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2507652A (en) * 1940-10-04 1950-05-16 Cornell Res Foundation Inc Ion source
US3332870A (en) * 1962-10-08 1967-07-25 Mhd Res Inc Method and apparatus for effecting chemical reactions by means of an electric arc
US3288993A (en) * 1963-11-08 1966-11-29 James F Steinhaus Plasma particle separator and analyzer having a grid structure consisting of linear tubular portions
US3287598A (en) * 1964-01-02 1966-11-22 High Voltage Engineering Corp Ion source having an expansion cup for effecting beam divergence
US3387218A (en) * 1964-05-06 1968-06-04 Trw Inc Apparatus for handling micron size range particulate material
US3476968A (en) * 1966-12-19 1969-11-04 Hitachi Ltd Microwave ion source

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3789253A (en) * 1971-07-06 1974-01-29 Thomson Csf Crucible for vaporizing chemically active elements method of manufacturing the same and ion source including said crucible
US3890535A (en) * 1971-10-13 1975-06-17 Anvar Ion sources
US3980916A (en) * 1975-07-22 1976-09-14 The United States Of America As Represented By The United States Energy Research And Development Administration Beam limiter for thermonuclear fusion devices
EP0713239A1 (en) * 1994-11-15 1996-05-22 Eaton Corporation Ion generating source for use in an ion implanter
US11031205B1 (en) 2020-02-04 2021-06-08 Georg-August-Universität Göttingen Stiftung Öffentlichen Rechts, Universitätsmedizin Device for generating negative ions by impinging positive ions on a target

Also Published As

Publication number Publication date
DE1917843B2 (de) 1978-01-05
GB1268941A (en) 1972-03-29
FR1585902A (enrdf_load_stackoverflow) 1970-02-06
DE1917843C3 (de) 1978-09-14
DE1917843A1 (de) 1969-10-16

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