US3624399A - Semiconductor device for detecting radiation - Google Patents

Semiconductor device for detecting radiation Download PDF

Info

Publication number
US3624399A
US3624399A US768034A US3624399DA US3624399A US 3624399 A US3624399 A US 3624399A US 768034 A US768034 A US 768034A US 3624399D A US3624399D A US 3624399DA US 3624399 A US3624399 A US 3624399A
Authority
US
United States
Prior art keywords
electrode
voltage
strip
strips
detection apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US768034A
Other languages
English (en)
Inventor
Jacob Anne Den Boer
Johan Hendrik Dieperink
Karel MULDER
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
US Philips Corp
Original Assignee
US Philips Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by US Philips Corp filed Critical US Philips Corp
Application granted granted Critical
Publication of US3624399A publication Critical patent/US3624399A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/186—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors having arrangements for blooming suppression
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/29—Measurement performed on radiation beams, e.g. position or section of the beam; Measurement of spatial distribution of radiation
    • G01T1/2914—Measurement of spatial distribution of radiation
    • G01T1/2921—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras
    • G01T1/2928—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras using solid state detectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass

Definitions

  • the invention relates to a semiconductor device for detecting radiation, which device comprises a semiconductor monocrystalline slice the two large oppositely located surfaces of which are provided with electrodes, at least one of the electrodes constituting a rectifying junction with the slice and a polarization voltage being applied between the electrodes, said junction being polarized in the reverse direction, and the other electrode constituting a conductive junction with the slice, at least one electrode being subdivided into a number of paiallel electrode strips separated from each other.
  • Such a subdivision of at least one of the electrodes is used for determining the place on which the radiation is incident. See, for ina stance, copending application, Ser. No. 6l9,465, filed Feb.
  • the crosstalk in detectors having a thin semiconductor slice can indeed be reduced in the above-described manner to a level which is also observed in detectors having a semiconductor slice which has a thickness such that the above-mentioned capacitive coupling cannot play any significant part.
  • At least the electrode constituting the rectifying junction is usually subdivided into strips and, independently of the fact whether the other electrode is divided into strips or is not divided into strips, the crosstalk is already suppressed for the greater part if the ancillary voltages are applied between the electrode strips of the electrode constituting the rectifying junction.
  • FIG. 1 diagrammatically shows an embodiment of a semiconductor device according to the invention
  • the polarization voltage in practice usually lies between approximately v. and approximately 1 Kv.
  • the ancillary voltage is small with respect to the polarization voltage and at any rate is chosen to be so that the electric field which is caused in the semiconductor body by the polarization voltage is substantially not adversely influenced by it.
  • the applied potential for the two strips of a group 210 and for the two strips of the group 21b is the same, while the ancillary voltage is applied between the groups 210 and 21b.
  • the electric signals which occur between the strips of the groups 21a and between the strips of the group 21b, respectively, can be derived on the secondary side of the transformers 25 and 26, and be applied to further apparatus, for example, to a pulse amplifier. This part of the device is not essential for the description of the invention and is not shown in the drawing.

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Measurement Of Radiation (AREA)
  • Light Receiving Elements (AREA)
US768034A 1967-10-25 1968-10-16 Semiconductor device for detecting radiation Expired - Lifetime US3624399A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6714455A NL6714455A (enrdf_load_stackoverflow) 1967-10-25 1967-10-25

Publications (1)

Publication Number Publication Date
US3624399A true US3624399A (en) 1971-11-30

Family

ID=19801546

Family Applications (1)

Application Number Title Priority Date Filing Date
US768034A Expired - Lifetime US3624399A (en) 1967-10-25 1968-10-16 Semiconductor device for detecting radiation

Country Status (9)

Country Link
US (1) US3624399A (enrdf_load_stackoverflow)
JP (1) JPS4536061B1 (enrdf_load_stackoverflow)
AT (1) AT308920B (enrdf_load_stackoverflow)
BE (1) BE722790A (enrdf_load_stackoverflow)
CH (1) CH487415A (enrdf_load_stackoverflow)
FR (1) FR1599807A (enrdf_load_stackoverflow)
GB (1) GB1178199A (enrdf_load_stackoverflow)
NL (1) NL6714455A (enrdf_load_stackoverflow)
SE (1) SE353966B (enrdf_load_stackoverflow)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3925669A (en) * 1972-08-14 1975-12-09 Siemens Ag Stripline radiation detection apparatus
US3934143A (en) * 1972-11-10 1976-01-20 Siemens Aktiengesellschaft Detector for ionizing radiation
US4255659A (en) * 1978-03-27 1981-03-10 The Regents Of The University Of California Semiconductor radiation detector
FR2486309A1 (fr) * 1980-07-07 1982-01-08 Philips Nv Dispositif semiconducteur sensible au rayonnement
US4395636A (en) * 1980-12-24 1983-07-26 Regents Of The University Of California Radiation imaging apparatus
US4419578A (en) * 1981-06-15 1983-12-06 United States Of America Solid state neutron detector
US4688067A (en) * 1984-02-24 1987-08-18 The United States Of America As Represented By The Department Of Energy Carrier transport and collection in fully depleted semiconductors by a combined action of the space charge field and the field due to electrode voltages
FR2596165A1 (fr) * 1986-03-19 1987-09-25 Miles Lab Detecteur de radiations ionisantes

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2125217B (en) * 1982-08-06 1986-01-02 Secr Defence Infra red detector arrays

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2985805A (en) * 1958-03-05 1961-05-23 Rca Corp Semiconductor devices
US3102959A (en) * 1957-06-26 1963-09-03 Philips Corp Device for amplifying, producing or modulating electrical oscillations
US3229104A (en) * 1962-12-24 1966-01-11 Ibm Four terminal electro-optical semiconductor device using light coupling

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3102959A (en) * 1957-06-26 1963-09-03 Philips Corp Device for amplifying, producing or modulating electrical oscillations
US2985805A (en) * 1958-03-05 1961-05-23 Rca Corp Semiconductor devices
US3229104A (en) * 1962-12-24 1966-01-11 Ibm Four terminal electro-optical semiconductor device using light coupling

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
IEEE Transactors on Nuclear Science; June, 1966, pp. 208 213. 250/83.3 *

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3925669A (en) * 1972-08-14 1975-12-09 Siemens Ag Stripline radiation detection apparatus
US3934143A (en) * 1972-11-10 1976-01-20 Siemens Aktiengesellschaft Detector for ionizing radiation
US4255659A (en) * 1978-03-27 1981-03-10 The Regents Of The University Of California Semiconductor radiation detector
FR2486309A1 (fr) * 1980-07-07 1982-01-08 Philips Nv Dispositif semiconducteur sensible au rayonnement
US4395636A (en) * 1980-12-24 1983-07-26 Regents Of The University Of California Radiation imaging apparatus
US4419578A (en) * 1981-06-15 1983-12-06 United States Of America Solid state neutron detector
US4688067A (en) * 1984-02-24 1987-08-18 The United States Of America As Represented By The Department Of Energy Carrier transport and collection in fully depleted semiconductors by a combined action of the space charge field and the field due to electrode voltages
FR2596165A1 (fr) * 1986-03-19 1987-09-25 Miles Lab Detecteur de radiations ionisantes
US4804848A (en) * 1986-03-19 1989-02-14 Mitsubishi Denki Kabushiki Kaisha Ionizing radiation detector for detecting the direction and intensity of the radiation

Also Published As

Publication number Publication date
NL6714455A (enrdf_load_stackoverflow) 1969-04-29
BE722790A (enrdf_load_stackoverflow) 1969-04-23
DE1803140B2 (de) 1976-05-20
CH487415A (de) 1970-03-15
FR1599807A (enrdf_load_stackoverflow) 1970-07-20
SE353966B (enrdf_load_stackoverflow) 1973-02-19
GB1178199A (en) 1970-01-21
DE1803140A1 (de) 1969-05-22
AT308920B (de) 1973-07-25
JPS4536061B1 (enrdf_load_stackoverflow) 1970-11-17

Similar Documents

Publication Publication Date Title
US3624399A (en) Semiconductor device for detecting radiation
US3530241A (en) Electrical position resolver arrangements
JPH04500437A (ja) 電磁放射線検出器と２次元電磁放射線感知アレイ
US1605911A (en) Electrostatic apparatus
US3480777A (en) Pyroelectric radiation detection system with extended frequency range and reduced capacitance
US3634849A (en) Signal collecting and distributing systems
US2750562A (en) Insulation fault detector
US1818331A (en) Method for determining the character of ore bodies
US2114298A (en) Apparatus for indicating small electromotive forces
US3591854A (en) Signal phase and magnitude measurement circuit
US2342628A (en) Coupling circuit
SE427704B (sv) Stralningsdetektoranordning
Moak et al. Response of Silicon Fission Detectors to Channeled 127I and 40Ar Ions
US2403955A (en) Electron tube circuit
US2571163A (en) Electric system
US2587555A (en) Mass spectrometer
US2592257A (en) Hall effect device
GB1269263A (en) Methods and apparatus for determining doping density in semiconductor material
US1939532A (en) Kerr cell
US2936418A (en) Pulse amplitude measuring device
Husimi Dynamic Properties of the Polarizability in BaTiO3 Crystal
US1636436A (en) System for wave analysis
US2534711A (en) Radio direction finder
GB1120526A (en) Improvements in or relating to electrical position resolvers and arrangements incorporating the same
US1678653A (en) System for reducing static disturbances