US3621320A - Secondary electron multiplier consisting of single sawtooth multiplying surface - Google Patents

Secondary electron multiplier consisting of single sawtooth multiplying surface Download PDF

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Publication number
US3621320A
US3621320A US828277A US3621320DA US3621320A US 3621320 A US3621320 A US 3621320A US 828277 A US828277 A US 828277A US 3621320D A US3621320D A US 3621320DA US 3621320 A US3621320 A US 3621320A
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United States
Prior art keywords
electron multiplier
coating
resistance
emissive layer
secondary emissive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US828277A
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English (en)
Inventor
Haruo Maeda
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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J43/00—Secondary-emission tubes; Electron-multiplier tubes
    • H01J43/04—Electron multipliers
    • H01J43/06—Electrode arrangements
    • H01J43/18—Electrode arrangements using essentially more than one dynode
    • H01J43/20—Dynodes consisting of sheet material, e.g. plane, bent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J43/00—Secondary-emission tubes; Electron-multiplier tubes
    • H01J43/04—Electron multipliers
    • H01J43/06—Electrode arrangements
    • H01J43/18—Electrode arrangements using essentially more than one dynode

Definitions

  • FIG. 1 is a schematic view of a conventional secondary electron multiplier of channel type.
  • FIG. 2 is an explanatory view of the electrons emitted in the secondary electron multiplier of FIG. 1.
  • FIG. 3 is a schematic view of a secondary electron multiplier of this invention.
  • FIG. 4 is an explanatory view of the electrons emitted in the secondary electron multiplier of FIG. 3.
  • a conventional channel-type secondary electron multiplier generally comprises parallel disposed plates 11 and 12 which are coated on their interior surfaces with secondary emissive material to form secondary emissive layers 13 and 14, respectively.
  • These layers 13 and 14 have external terminals 15, 16, 17 and 18 at their ends, of which the terminals and 17 are connected to the negative tenninal of a voltage source 19 and the terminals 16 and 18 to the positive terminal of the voltage source 19.
  • equipotential planes are built up normal to the secondary emissive layers 13 and 14, as indicated by the dotted lines of FIG. 2.
  • an electric field is established between the plates 11 and 12, which electric field serves to accelerate secondary electrons emitted from the secondary emissive layers 13 and 14 in the axial direction.
  • the operation of the secondary electron multiplier is as follows: primary electrons 20 (FIG. 2) supplied from a source of primary electrons (not shown) are caused to impinge on the secondary emissive layer 14 near the external terminal 17, releasing a greater number of secondary electrons than that of the incident primary electrons.
  • the released electrons trace parabolic trajectories, as generally indicated at 21, under the influence of the axial electric field, impinging on the surface of opposite secondary emissive layer 13.
  • the frequency at which electrons are caused to impinge on the secondary emissive layers l3 and 114 and accordingly the factor by which electrons are multiplied is proportional to the length of the secondary emissive layers 13 and I4 and is inversely proportional to the gap therebetween.
  • the secondary emissive layers 13 and 14 be rendered longer and the gap therebetween smaller.
  • equipotential planes normal to the electric field established between the two secondary emissive layers 13 and 14 should be uniformly normal to the secondary emissive layers.
  • the increase in the length of the secondary emissive layers would only impair the compactness of the secondary electron multiplier.
  • a secondary electron multiplier 24 of the invention largely comprises a secondary electron emitting plate 25.
  • the secondary electron emitting plate 25 comprises a supporting member 26 of generally sawtooth section having two kinds of inclined surfaces 27 and 28.
  • the supporting member 26 has on each of the long inclined surfaces 27 a coating 29 of low-resistance material such as metal, and on the surface of the coating 29 there is formed a secondary emissive layer 30.
  • the secondary emissive layer 30 may be of any suitable material such as magnesium oxide or potassium chloride which has a high ratio of secondary emission and a high resistance.
  • the supporting member 26 may be made of glass or ceramic.
  • coating 31 of highly resistive material is deposited. And these low-resistive coatings 29 and high-resistance coatings 31 are electrically connected in series with each other.
  • the resistances 32 represent resistances given by the highly resistive layer 31.
  • External terminals 33 and 34 are connected to the seriesconnected low-resistance and high-resistance coatings 29 and 31 at the opposite ends thereof for applying thereto an accelerating voltage.
  • a voltage source 35 is connected across the external terminals 33 and 34. Since each of the secondary emissive layers 30 forms a substantially equipotential plane due to the presence of the low-resistance coatings 29 underlying the secondary emissive layers 30, equipotential planes are built up as indicated by the dotted lines 36 (FIG. 4).
  • An electrode 37 for collecting multiplied secondary electrons is positioned near the output end of the secondary electron emitting plate 25. Between the electrode 37 and the extema] terminal 34 is connected a voltage source 38 for maintaining the electrode 37 at a positive potential with respect to the external terminal 34, so that the secondary electrons leaving the secondary electron emitting plate 25 may be substantially totally captured by the electrode 37.
  • electrons 39 from a source of primary electrons are caused to impinge upon the secondary emissive layer 30 nearest to the external terminal 33 by suitable means, releasing a greater number of secondary electrons than that of the incident primary electrons 39.
  • These emitted secondary electrons trace parabolic trajectories as: generally indicated at 40 under the influence of the electric field normal to the equipotential planes 36 and impinge upon the following secondary emissive layer 41, liberating other secondary electrons which are then caused to impinge upon the next secondary emissive layer 42.
  • This process repeats until the secondary emissive layer nearest to the external terminal 34 is excited by the secondary electrons emitted from the preceding secondary emissive layer to release secondary electrons which are captured by a collector electrode 37.
  • the secondary electron emitting plate 25 be of such a configuration as to give the highest possible ratio of secondary emission. It should be noted that a higher multiplication factor than those obtained with the conventional channel-type electron multiplier can be attained since, as best understood from. the inspection of the equipotential planes 36 near the secondary emissive layers 30, 41 and 42, the layers face the incident electrons approximately normally thereto.
  • the layers 29, 30 and 31 can be applied to the supporting member 26 firstly by evaporating a low-resistance material such as metal and secondly by a secondary emissive material on each of the long inclined surfaces 27 from one side. A highly resistive material is then applied to each of the short inclined surfaces 23 from the other side.
  • a low-resistance material such as metal
  • a secondary emissive material is then applied to each of the short inclined surfaces 23 from the other side.
  • An electron multiplier consisting of a single sawtooth multiplying surface comprising:
  • an insulating supporting plate having first and second kinds of inclined flat surfaces alternately and regularly positioned along its length, said plate having an upper surface portion shaped in a sawtooth form;
  • a voltage source connected across said series circuit to establish electron-accelerating electric fields around the surfaces of said secondary emissive layers, the secondary electrons emitted from the respective emissive surfaces due to incoming primary electrons accelerating toward and impinging upon the following emissive surfaces at a 4 high potential; and g. a collector electrode kept at a positive potential with respect to said secondary emissive layers.

Landscapes

  • Electron Tubes For Measurement (AREA)
  • Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
US828277A 1968-05-31 1969-05-27 Secondary electron multiplier consisting of single sawtooth multiplying surface Expired - Lifetime US3621320A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP43037665A JPS5016145B1 (en, 2012) 1968-05-31 1968-05-31

Publications (1)

Publication Number Publication Date
US3621320A true US3621320A (en) 1971-11-16

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Family Applications (1)

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US828277A Expired - Lifetime US3621320A (en) 1968-05-31 1969-05-27 Secondary electron multiplier consisting of single sawtooth multiplying surface

Country Status (6)

Country Link
US (1) US3621320A (en, 2012)
JP (1) JPS5016145B1 (en, 2012)
DE (1) DE1927603C3 (en, 2012)
FR (1) FR2009755A1 (en, 2012)
GB (1) GB1260543A (en, 2012)
NL (1) NL149948B (en, 2012)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1985002058A1 (fr) * 1983-10-31 1985-05-09 Institut Kibernetiki Akademii Nauk Gruzinskoi Ssr Diviseur de signaux electriques

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5288787U (en, 2012) * 1975-12-26 1977-07-02
US7977878B2 (en) * 2004-02-17 2011-07-12 Hamamatsu Photonics K.K. Photomultiplier and its manufacturing method

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3197662A (en) * 1960-03-11 1965-07-27 Westinghouse Electric Corp Transmissive spongy secondary emitter
US3244922A (en) * 1962-11-05 1966-04-05 Itt Electron multiplier having undulated passage with semiconductive secondary emissive coating
US3349273A (en) * 1965-11-12 1967-10-24 Gaus Electrophysics Photoelectric transducer head

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3197662A (en) * 1960-03-11 1965-07-27 Westinghouse Electric Corp Transmissive spongy secondary emitter
US3244922A (en) * 1962-11-05 1966-04-05 Itt Electron multiplier having undulated passage with semiconductive secondary emissive coating
US3349273A (en) * 1965-11-12 1967-10-24 Gaus Electrophysics Photoelectric transducer head

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1985002058A1 (fr) * 1983-10-31 1985-05-09 Institut Kibernetiki Akademii Nauk Gruzinskoi Ssr Diviseur de signaux electriques
GB2158651A (en) * 1983-10-31 1985-11-13 Kib Akademii Nauk Gruzinskoi S Divider of electrical signals

Also Published As

Publication number Publication date
DE1927603B2 (de) 1973-05-03
NL149948B (nl) 1976-06-15
FR2009755A1 (en, 2012) 1970-02-06
GB1260543A (en) 1972-01-19
DE1927603A1 (de) 1969-12-11
JPS5016145B1 (en, 2012) 1975-06-11
NL6908253A (en, 2012) 1969-12-02
DE1927603C3 (de) 1973-11-15

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