US3571673A - Current controlling device - Google Patents

Current controlling device Download PDF

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Publication number
US3571673A
US3571673A US754533A US3571673DA US3571673A US 3571673 A US3571673 A US 3571673A US 754533 A US754533 A US 754533A US 3571673D A US3571673D A US 3571673DA US 3571673 A US3571673 A US 3571673A
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current
electrical resistance
semiconductor material
condition
controlling device
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US754533A
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Stanford R Ovshinsky
Gordon R Fleming
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Energy Conversion Devices Inc
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Energy Conversion Devices Inc
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Assigned to ENERGY CONVERSION DEVICES, INC. reassignment ENERGY CONVERSION DEVICES, INC. RELEASED BY SECURED PARTY (SEE DOCUMENT FOR DETAILS). Assignors: NATIONAL BANK OF DETROIT
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/884—Switching materials based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors

Definitions

  • ABSTRACT A current controlling device for an electrical circuit including a semiconductor material and electrodes in low electrical resistance contact therewith, wherein said [54] CURRENT CONT ROL LING DEVICE semiconductor material has a high electrical resistance to prol4Cla1ms, 7 Drawing Figs.
  • the semiconductor materials which are engaged by the electrodes comprise multielement nonchalcogenide materials, i.e., materials not containing Group VIA elements, such as oxygen, sulfur selenium, tellurium or polonium.
  • the semiconductor material have or tend to have a polymeric structure, whether they be crystalline or amorphous in nature, this being occasioned by the fact that at least some of the elements of the semiconductor materials are polymer forming elements, as for example, arsenic, phosphorous, silicon, gennanium and boron.
  • These polymeric elements and, also, gallium and aluminum are particularly useful in the semiconductor materials since they effectively form covalent bonds in a polymeric structure to provide or tend to provide short range order in the semiconductor material.
  • the semiconductor materials include as essential ingredients arsenic or phosphorous and silicon, germanium, gallium, boron or aluminum.
  • arsenic or phosphorous and silicon germanium, gallium, boron or aluminum.
  • exceptionally tine results have been obtained by combining germanium and arsenic (Ge As or silicon and arsenic (Si As,) in substantially stochiometric amounts, such semiconductor materials providing the above mentioned nonmemory type of switching. It has been found that by varying the stochiometric relations and adding minor amounts of other ingredients, such as, cadmium or zinc, to the semiconductor materials fine results are also obtained, such semiconductor materials operating as nonmemory type devices or memory type devices depending upon the relative proportions of the elements in the semiconductor materials.
  • the semiconductor materials in their blocking condition are substantially disordered to provide short range order, large numbers of current carrier restraining centers, such as traps, recombination centers or the like, a substantial barrier layer, and high blocking resistances.
  • the substantially disordered semiconductor material may be generally amorphous or polycrystalline in structure, the short range order, large numbers of current carrier restraining centers, high resistance and barrier layer throughout the semiconductor materials being assured by the generally amorphous structure or by the relationships between the crystals in the polycrystalline structure.
  • the applied voltage operates to produce and release free current carriers and cause the barrier layer to become vanishingly thin.
  • said at least one path through the semiconductor materials remain in their substantially disordered condition when switched to their conducting condition, and revert to their blocking condition when the current therethrough decreases below a minimum current holding value, the current carriers being restrained (trapped or recombined or the like) by the current carrier restraining centers and the barrier layer being reestablished.
  • the arsenic or phosphorous included in the multielement semiconductor materials breaks up the long range order and produces the short range or local order therein to provide the blocking condition therein for making possible the nonmemory and memory type operations discussed above.
  • An increase in the amount of arsenic or phosphorous in the semiconductor materials tends to provide nonmemory-type operation and a decrease tends to provide memory type operation.
  • nonchalcogenide semiconductor materials as specified herein produces improved results over the use of chalcogenide materials in that such materials, among other things, appear to be more stable as to their threshold voltage values, appear to operate better at higher temperatures, and appear to be less dependent upon ambient temperature conditions.
  • the semiconductor materials which are engaged by the electrodes may be in the form of thick bodies or they may be in the form of thin layers or films.
  • FIG. 1 is a diagrammatic illustration of the current controlling device of this invention connected in series in a load circuit; Y
  • FIG. 2 is a voltage current curve illustrating the operation of the nonmemory-type current controlling device of this invention in a DC load circuit
  • FIGS. 3 and 4 are voltage current curves illustrating the symmetrical operation of the nonmemory-type current controlling device and the operation thereof when included in an AC load circuit;
  • FIG. 5 is a voltage current curve illustrating the operation of the memory type current controlling device of this invention in a DC load circuit
  • FIGS. 6 and 7 are voltage current curves illustrating the symmetrical operation of the memory-type current controlling device and the operation thereof when included in an AC load circuit.
  • the current controlling device of this invention is generally designated at 10. It includes a nonchalcogenide semiconductor material 11 which is of one conductivity type and which is of high electrical resistance and a pair of electrodes 12 and 13 in contact with the semiconductor material ll and having a low electrical resistance of transition therewith.
  • the electrodes l2 and 13 of the current controlling device connect the same in series in an electrical load circuit having a load 14 and a pair of terminals 15 and 16 for applying power thereto.
  • the power supplied may be a DC voltage or an AC voltage as desired.
  • the circuit arrangement illustrated in FIG. 1, and as so far described, is applicable for the nonmemory type of current controlling device.
  • the circuit also includes a source of current 17, a low resistance 1.8 and a switch 19 connected to the electrodes 12 and 13 of the current controlling device.
  • the purpose of this auxiliary circuit is to switch the memory type device from its conducting condition to its blocking condition.
  • the resistance value of the resistance 18 is considerably less than the resistance value of the load 14.
  • FIG. 2 is an I-V curve illustrating the DC operation of the nonmemory-type current controlling device and in this instance the switch 19 always remains open.
  • the device 10 is normally in its high resistance blocking condition and as the DC voltage is applied to the terminals and l6and increased, the voltage current characteristics of the device are illustrated by the curve 20, the electrical resistance of the device being high and substantially blocking the current flow therethrough.
  • the high electrical resistance in the semiconductor material substantially instantaneously decreases in at least one path between the electrodes 12 and 13 to a low electrical resistance, the substantially instantaneous switching being indicated by the curve 21.
  • This provides a low electrical resistance or conducting condition for conducting current therethrough.
  • the low electrical resistance is many orders of magnitude less than the high electrical resistance.
  • the conducting condition is illustrated by the-curve 22 and it is noted that there is a substantially linear voltage current characteristic and a substantially constant voltage characteristic which are the same for increase and decrease in current. In other words, current is conductedat a substantially constant voltage.
  • the semiconductor element In the low resistance current conducting condition the semiconductor element has a voltage drop which is a minor fraction of the voltage drop in the high resistance blocking condition near the threshold voltage value.
  • the low electrical resistance of said at least one path immediately returns to the high electrical resistance as illustrated by the curve 23 to reestablish the high resistance blocking condition.
  • a current is required to maintain the nonmemory-type current controlling device in its conducting condition and when the current falls below a minimum current holding value, the low electrical resistance immediately returns to the high electrical resistance.
  • the nonmemory current controlling device 10 of this invention is symmetrical in its operation, it blocking current substantially equally in each direction and it conducting current substantially equally in each direction, and the switching between the blocking and conducting conditions being extremely rapid.
  • the voltage current characteristics for the second half cycle of the AC current would be in the opposite quadrant from that illustrated in FIG. 2.
  • FIG. 3 illustrates the device 10 in its blocking condition where the peak voltage of the AC voltage is below the threshold voltage value of the device, the blocking condition being illustrated by the curve in both half cycles.
  • the device When, however, the peak voltage of the applied AC voltage increases above the threshold voltage value of the device, the device is substantially instantaneously switched along the curve 21 to the conducting condition illustrated by the curves 22, the device switching during each half cycle of the applied AC voltage. As the applied AC voltage nears zero so that the current through the device falls below the minimum current holding value, the device switches along the curves 23 from the low electrical resistance condition to the high electrical resistance condition illustrated by the curve 20, this switching occurring near the end of each half cycle.
  • the high electrical resistance may be about I megohm andthe low electrical resistance about 10 ohms
  • the threshold voltage value may be about 20 volts and the voltage drop across the device in the conducting condition may be less than 1 volt, and the switching times may be in nanoseconds or less.
  • the semiconductor material is substantially disordered and generally amorphous
  • said at least one conducting path through the semiconductor material is also substantially disordered and generally amorphous in the conducting condition.
  • the semiconductor material is substantially disordered and generally crystalline or polycrystalline or the like, in the manner of having local chemical bonds similar to those of the substantially disordered and generally amorphous semiconductor material, neither is there any substantial change in phase or crystal or polycrystalline structure.
  • FIG. 5 is an I-V curve illustrating the DC operation of the memory type current controlling device 10.
  • the device is normally in its high resistance condition and as the DC voltage is applied to the terminals 15 and 16 and increased, the voltage current characteristics of the device are illustrated by the curve 30, the electrical resistance of the device being high and substantially blocking the current flow therethrough.
  • the high electrical resistance in the semiconductor material 11 substantially instantaneously decreases in at least one path between the electrodes 12 and 13 to a low electrical resistance, the substantially instantaneous switching being indicated by the curve 31.
  • the low electrical resistance is many orders of magnitude less than the high electrical resistance.
  • the conducting condition is illustrated by the curve 32 and it is noted that there is a substantially ohmic voltage-current characteristic. In other words, current is conducted substantially ohmically as illustrated by the curve 32. In the low resistance current conducting condition the semiconductor material has a voltage drop which is a minor fraction of the voltage drop in the high resistance blocking condition near the threshold voltage value.
  • the memory-type current controlling device has memory of its conducting condition and will remain in this conducting condition even though the current is decreased to zero or reversed until switched to its blocking condition as hereafter described.
  • the load line of the load circuit is illustrated at 33, it being substantially parallel to the switching curve 31.
  • the load line for such current is along the line 34 since there is very little, if any, resistance in this control circuit, and as the load line 34 intersects the curve 30, the conducting condition of the device is immediately realtered and switched to its blocking condition.
  • the memory-type device will remain in its blocking condition until switched to its conducting condition by the reapplication of a threshold voltage to the device through the terminals 15 and 16.
  • the memory-type current controlling device 10 of this invention is also symmetrical in its operation, it blocking current substantially equally in each direction and it conducting current substantially equally in each direction, and the switching between the blocking and conducting conditions being extremely rapid.
  • the voltage current characteristics for the second half cycle of the AC current would be in the opposite quadrant from that illustrated in FIG. 5.
  • FIGS. 6 and 7. illustrates the device 10 in its blocking condition where the peak voltage of the AC voltage is below the threshold voltage value of the device, the blocking condition being illustrated by the curve 30 in both half cycles. Thus, the device blocks current substantially equally in both half cycles.
  • the device When, however, the peak voltage of the applied AC voltage increases above the threshold voltage value of the memory-type device, the device substantially instantaneously switches to the conducting condition illustrated by the curve 32 in FIG. 7 and it remains in this conducting condition regardless of the reduction of the current to zero or the reversal of the current.
  • This symmetrical conducting condition is illustrated by the curve 32 in FIG. 7.
  • the current pulse causes the memory-type current controlling device to be immediately switched to its blocking condition as illustrated by the curve 3t) in FIG. 6.
  • the high electrical resistance may be about 1 megohm and the low electrical resistance about ohms
  • the threshold voltage value may be about 20 volts and the switching times are extremely rapid.
  • the semiconductor material is substantially disordered and generally amorphous or polycrystalline or the like in its blocking condition and said at least one conducting path through the element in its conducting condition is more ordered and generally crystalline or pseudo crystalline, there being a change of phase of physical structure in the material between the blocking condition and the conducting condition.
  • switching in the nonmemory-type manner as described above occurs at or near the stochiometric points of SiAs and SiAs and in the regions there between.
  • the atomic percent of arsenic is therefore between about 662/3 percent and -50 percent with respect to silicon.
  • Small additions of additional elements may be included in the aforementioned system to provide a ternary system or the like.
  • Such small additions may include, for example, arsenides of cadmium and such small additions are preferably in the range of 0 percent to about 20 percent in atomic weight percent of the ternary system.
  • switching in the nomemory-type manner also occurs where the compositions are richer in arsenic.
  • the switching is accomplished in the memory-type manner ad described above.
  • the type of switching whether it be nonmemory-type or memory type, may be predetermined as desired by appropriately selecting the proportion of the arsenic included in the semiconductor material composition.
  • the semiconductor material is a polymeric material, which utilizes polymer forming elements, and which provides the aforementioned electrical and switching characteristics.
  • the arsenic in the semiconductor material provides and tends to provide the aforementioned short range order with its intendent advantages, the more the arsenic the more is the tendency to maintain the short range order.
  • arsenic in the composition there is a strong tendency to maintain the semiconductor material in its substantially disordered and short range order condition even in the conducting condition to provide the aforementioned nonmemory-typeoperation.
  • the tendency to maintain the semiconductor material in its substantially disordered and short range order condition is not as strong so that when such a semiconductor material is switched to its conducting condition this tendency is overcome and the semiconductor material changes to the more ordered and long range order condition where it remains to provide current conduction in the memory type manner.
  • the more ordered and long range order condition is broken up, and the arsenic causes the semiconductor material to reassume its substantially disordered and short range order condition.
  • the semiconductor materials which are engaged by the electrodes may be in the form of thick bodies or they may be in the form of thin layers of films.
  • appropriate amounts of the constituent elements or ingredients may be heated in a suitable closed vessel to a condition where the ingredients are a molten mass and agitated for uniformity of the mass.
  • the mass may then be cooled to form an ingot and desired shapes of the semiconductor material may be cut or otherwise removed from the ingot.
  • the semiconductor materials may be cast from the molten'mass.
  • the ingots may be particlized by grinding or milling or the like to provide fine particles or a powder of the semiconductor material which may be pressed into pellets of desired configuration.
  • fine particles or a powder of the semiconductor material obtained from an ingot of the semiconductor material as stated above, may be dispersed in a suitable carrier, such as, paint or ink or the like, and deposited on a suitable substrate by brushing, silk screening or the like.
  • Thin layers or films may also be formed by sputtering the semiconductor material onto a substrate from an ingot of the semiconductor or by cosputtering the constituent elements or ingredients themselves onto the substrate.
  • the semiconductor material therein has a substantially amorphous structure.
  • the electrodes may be made to contact the semiconductor materials in various ways. They may be mechanically pressed in contact therewith, they may be hot pressed into the semiconductor material, andthey may be deposited thereon by vacuum deposition, sputtering, or'deposition from a solution or the like. Alternatively, the semiconductor material may be deposited on the electrodes by brushing, silk screening, sputtering or the like.
  • the electrodes should be good electrical conductors and should not react unfavorably with the semiconductor material.
  • the electrodes may comprise refractory metals, such as, tungsten, tantalum, molybdenum, columbium or the like, or metals, such as, stainless steel, nickel, chromium or the like.
  • a current controlling device for an electrical circuit including a semiconductor material and electrodes in contact therewith, wherein said semiconductor material has a high electrical resistance to provide a blocking condition for substantially blocking current therethrough, wherein said high electrical resistance in response to a voltage above a threshold voltage value substantially instantaneously decreases in at least one path between the electrodes to a low electrical resistance which is orders of magnitude lower than the high electrical resistance to provide a conducting condition for conducting current therethrough, and wherein the semiconductor material in the low electrical resistance conducting condition has a voltage drop which is a fraction of the voltage drop in the high electrical resistance blocking condition near the threshold voltage value, the improvement wherein said semiconductor material is a substantially disordered nonchalcogenide binary material including as one essential element arsenic or phosphorous and as another essential element silicon, germanium, gallium, boron or aluminum.

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US754533A 1968-08-22 1968-08-22 Current controlling device Expired - Lifetime US3571673A (en)

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Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3656029A (en) * 1970-12-31 1972-04-11 Ibm BISTABLE RESISTOR OF EUROPIUM OXIDE, EUROPIUM SULFIDE, OR EUROPIUM SELENIUM DOPED WITH THREE d TRANSITION OR VA ELEMENT
US3872492A (en) * 1972-07-26 1975-03-18 Energy Conversion Devices Inc Radiation hardened field effect transistor
US4064757A (en) * 1976-10-18 1977-12-27 Allied Chemical Corporation Glassy metal alloy temperature sensing elements for resistance thermometers
US4567499A (en) * 1982-05-15 1986-01-28 The British Petroleum Company P.L.C. Memory device
US4567503A (en) * 1983-06-29 1986-01-28 Stauffer Chemical Company MIS Device employing elemental pnictide or polyphosphide insulating layers
US5233217A (en) * 1991-05-03 1993-08-03 Crosspoint Solutions Plug contact with antifuse
US5247349A (en) * 1982-11-16 1993-09-21 Stauffer Chemical Company Passivation and insulation of III-V devices with pnictides, particularly amorphous pnictides having a layer-like structure
US5329153A (en) * 1992-04-10 1994-07-12 Crosspoint Solutions, Inc. Antifuse with nonstoichiometric tin layer and method of manufacture thereof
US5384481A (en) * 1991-01-17 1995-01-24 Crosspoint Solutions, Inc. Antifuse circuit structure for use in a field programmable gate array and method of manufacture thereof
US5527745A (en) * 1991-03-20 1996-06-18 Crosspoint Solutions, Inc. Method of fabricating antifuses in an integrated circuit device and resulting structure
US20040160812A1 (en) * 2002-08-02 2004-08-19 Unity Semiconductor Corporation 2-Terminal trapped charge memory device with voltage switchable multi-level resistance
CN102751319A (zh) * 2012-07-04 2012-10-24 中国科学院上海微系统与信息技术研究所 基于硫系化合物的浪涌保护器件及其制备方法
CN102923676A (zh) * 2012-10-25 2013-02-13 中国科学院上海微系统与信息技术研究所 一种适用于浪涌保护器件的硫系化合物薄膜材料

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1213076B (de) * 1964-07-04 1966-03-24 Danfoss As Elektronisches Festkoerperbauelement zum Schalten
US3370208A (en) * 1964-03-25 1968-02-20 Nippon Telegraph & Telephone Thin film negative resistance semiconductor device
US3409400A (en) * 1967-03-10 1968-11-05 Du Pont Binary, ternary and quaternary compounds composed of silicon, nickel, arsenic, and phosphorus

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1266894B (de) * 1965-03-03 1968-04-25 Danfoss As Sperrschichtfreies Halbleiterschaltelement

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3370208A (en) * 1964-03-25 1968-02-20 Nippon Telegraph & Telephone Thin film negative resistance semiconductor device
DE1213076B (de) * 1964-07-04 1966-03-24 Danfoss As Elektronisches Festkoerperbauelement zum Schalten
US3409400A (en) * 1967-03-10 1968-11-05 Du Pont Binary, ternary and quaternary compounds composed of silicon, nickel, arsenic, and phosphorus

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3656029A (en) * 1970-12-31 1972-04-11 Ibm BISTABLE RESISTOR OF EUROPIUM OXIDE, EUROPIUM SULFIDE, OR EUROPIUM SELENIUM DOPED WITH THREE d TRANSITION OR VA ELEMENT
US3872492A (en) * 1972-07-26 1975-03-18 Energy Conversion Devices Inc Radiation hardened field effect transistor
US4064757A (en) * 1976-10-18 1977-12-27 Allied Chemical Corporation Glassy metal alloy temperature sensing elements for resistance thermometers
US4567499A (en) * 1982-05-15 1986-01-28 The British Petroleum Company P.L.C. Memory device
US5247349A (en) * 1982-11-16 1993-09-21 Stauffer Chemical Company Passivation and insulation of III-V devices with pnictides, particularly amorphous pnictides having a layer-like structure
US4567503A (en) * 1983-06-29 1986-01-28 Stauffer Chemical Company MIS Device employing elemental pnictide or polyphosphide insulating layers
US5384481A (en) * 1991-01-17 1995-01-24 Crosspoint Solutions, Inc. Antifuse circuit structure for use in a field programmable gate array and method of manufacture thereof
US5493147A (en) * 1991-01-17 1996-02-20 Crosspoint Solutions, Inc. Antifuse circuit structure for use in a field programmable gate array and method of manufacture thereof
US5527745A (en) * 1991-03-20 1996-06-18 Crosspoint Solutions, Inc. Method of fabricating antifuses in an integrated circuit device and resulting structure
US5233217A (en) * 1991-05-03 1993-08-03 Crosspoint Solutions Plug contact with antifuse
US5329153A (en) * 1992-04-10 1994-07-12 Crosspoint Solutions, Inc. Antifuse with nonstoichiometric tin layer and method of manufacture thereof
US20040160812A1 (en) * 2002-08-02 2004-08-19 Unity Semiconductor Corporation 2-Terminal trapped charge memory device with voltage switchable multi-level resistance
US7038935B2 (en) * 2002-08-02 2006-05-02 Unity Semiconductor Corporation 2-terminal trapped charge memory device with voltage switchable multi-level resistance
CN102751319A (zh) * 2012-07-04 2012-10-24 中国科学院上海微系统与信息技术研究所 基于硫系化合物的浪涌保护器件及其制备方法
CN102751319B (zh) * 2012-07-04 2015-04-15 中国科学院上海微系统与信息技术研究所 基于硫系化合物的浪涌保护器件及其制备方法
CN102923676A (zh) * 2012-10-25 2013-02-13 中国科学院上海微系统与信息技术研究所 一种适用于浪涌保护器件的硫系化合物薄膜材料
CN102923676B (zh) * 2012-10-25 2014-10-15 中国科学院上海微系统与信息技术研究所 一种适用于浪涌保护器件的硫系化合物薄膜材料

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DE1939280A1 (de) 1970-02-26
FR2016174A1 (enrdf_load_html_response) 1970-05-08
IL32582A (en) 1973-05-31
IL32582A0 (en) 1969-09-25
NL6912470A (enrdf_load_html_response) 1970-02-24
GB1280689A (en) 1972-07-05
FR2016174B1 (enrdf_load_html_response) 1974-06-14
SE359402B (enrdf_load_html_response) 1973-08-27
RO59767A (enrdf_load_html_response) 1976-06-15
BE737612A (enrdf_load_html_response) 1970-02-02

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