US3537877A - Low temperature method for producing amorphous boron-carbon deposits - Google Patents
Low temperature method for producing amorphous boron-carbon deposits Download PDFInfo
- Publication number
- US3537877A US3537877A US603781A US3537877DA US3537877A US 3537877 A US3537877 A US 3537877A US 603781 A US603781 A US 603781A US 3537877D A US3537877D A US 3537877DA US 3537877 A US3537877 A US 3537877A
- Authority
- US
- United States
- Prior art keywords
- boron
- amorphous boron
- carbon deposits
- low temperature
- carbon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- PPWPWBNSKBDSPK-UHFFFAOYSA-N [B].[C] Chemical compound [B].[C] PPWPWBNSKBDSPK-UHFFFAOYSA-N 0.000 title description 16
- 238000004519 manufacturing process Methods 0.000 title description 5
- 239000000758 substrate Substances 0.000 description 15
- 238000000034 method Methods 0.000 description 12
- 239000000463 material Substances 0.000 description 10
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical compound B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 8
- 239000000203 mixture Substances 0.000 description 8
- 239000007789 gas Substances 0.000 description 7
- 239000000376 reactant Substances 0.000 description 7
- HSFWRNGVRCDJHI-UHFFFAOYSA-N Acetylene Chemical compound C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 229910010277 boron hydride Inorganic materials 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 4
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 3
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical group B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 3
- 229910052753 mercury Inorganic materials 0.000 description 3
- 229910052580 B4C Inorganic materials 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000002939 deleterious effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000008246 gaseous mixture Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000013067 intermediate product Substances 0.000 description 1
- 238000007431 microscopic evaluation Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 238000007086 side reaction Methods 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
Definitions
- Amorphous boron-carbon is deposited, at very low absolute pressure, on a substrate heated to 700-900 C., from a reactant gas mixture of boron hydride and acety lene.
- the substrate is a filament
- the pressure is 5 mm. mercury
- the temperature is 850 C.
- the boron hydride is diborane
- the reactant gas mixture also includes hydrogen.
- This invention relates to a process for producing amorphous boron-carbon deposits and more particularly to a process in which amorphous boron-carbon deposits are produced at relatively low temperature.
- Amorphous boron-carbon deposits either in the boron carbide form or in non-stoichiometric mixtures of boron and carbon, have been found to have highly desirable mechanical properties. In particular, these materials are known for their extremely high tensile strength and modulus of elasticity even at very high temperatures. It should be noted that while this material is referred to herein as amorphous, this term is not intended to signify the complete absence of a crystalline structure in the deposit but instead indicates only that no crystalline structure is discernible by the presently available techniques, such as X-ray diffraction, etc.
- Another object of this invention is to provide a practical low temperature process for producing amorphous boron-carbon deposits in a form which can be utilized as a structural material reinforcement.
- a process which comprises, briefly, heating a substrate material to a temperature in the range from 700-900 C. at a very low pressure and contacting the substrate material with a gaseous mixture 3,537,877. Patented Nov. 3, 1970 of acetylene and a boron hydride.
- a filamentary substrate is contacted with a mixture of acetylene, diborane, and hydrogen at a temperature of about 850 C. and a pressure of about 5 millimeters mercury.
- boron hydrides which constitute the source of boron in the present invention
- diborane is preferred because of its relative volatility, availability and low cost. These materials are relatively stable at ordinary temperatures and apparently undergo controlled decomposition at the reaction temperature and pressure of the present process. Although the specific mode of decomposition is unknown, it is likely that numerous intermediate products, including higher molecular weight boron hydrides, are formed as the decomposition proceeds. This further suggests that other boron hydrides may be used in lieu of, or in addition to, the better known and more readily available diborane.
- amorphous boron-carbon deposits may be produced at low pressure by decomposition of a mixture consisting only of a boron hydride and acetylene
- hydrogen is usually included in the reactant gas mixture.
- the role of the hydrogen is two-fold. First, it aids in the reduction to boron carbide, and second, it moderates deleterious side reactions.
- the effectiveness of the present invention to produce boron-carbon deposits in the temperature range below 1000 C. is an important feature of the process taught herein. It permits the production of amorphous boroncarbon deposits on many substrates which would undergo undesirable physical or chemical changes at temperatures above 1000 C.
- the latter category includes metallic substrates, which may undergo crystalline changes or exhibit a loss in ductility if they are heated above 1000 C., and also includes substrates such as silica and glass which would deteriorate at temperatures above 1000 C.
- the latter are particularly desirable substrates for use in producing low density boron-carbon filaments.
- Such filaments, produced, in accordance with the present invention, by the deposition of amorphous boron-carbon on a filamentary silica or glass substrate have excellent potential as the reinforcing constituent of composite structural materials.
- a tungsten filament 1 mill in diameter, was mounted axially in a horizontally disposed cylindrical reactor 2 inches long and inches in internal diameter.
- This reactor included electrical contacts for resistively heating the filament in the reactor and means for maintaining a high vacuum and a low concentration of contaminants in the reactor.
- Other features of the reactor included inlets and outlets for streams of reactant gases flowing generally perpendic ularly to the reactor axis and a reactant gas diverter, comprising a slotted barrier between the gas inlets and the filament in the reactor, for directing the reactant gases into the space immediately surrounding the filament.
- the temperature of the substrate was raised to about 850 C. by resistive heating.
- a mixture of hydrogen, flowing at 20 cubic centimeters per minute, diborane 3 flowing at 120 cubic centimeters per minute, and acetylene flowing at 30 cubic centimeters per minute was passed through the reactor. This resulted in production of an amorphous boron-carbon deposit at a rate, in diameter growth, of about 25 mils per hour.
- the filament produced in the above example was hard and, under X-ray analysis, devoid of any discernible crystal structure.
- an indefinite length of amorphous boron-carbon-coated filament may be produced by passing a substrate filament of indefinite length through a reactor of the type described in the above example. This filament would be continuously heated and contacted with the gaseous reactant mixture as it passes through the reactor.
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Carbon And Carbon Compounds (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US58248366A | 1966-09-28 | 1966-09-28 | |
| US58779866A | 1966-10-19 | 1966-10-19 | |
| US58893666A | 1966-10-24 | 1966-10-24 | |
| US60378166A | 1966-12-22 | 1966-12-22 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| US3537877A true US3537877A (en) | 1970-11-03 |
Family
ID=27504960
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US603781A Expired - Lifetime US3537877A (en) | 1966-09-28 | 1966-12-22 | Low temperature method for producing amorphous boron-carbon deposits |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3537877A (de) |
| CH (1) | CH534744A (de) |
| DE (1) | DE1621248A1 (de) |
| FR (1) | FR93676E (de) |
| GB (1) | GB1190824A (de) |
| SE (1) | SE353354B (de) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3861953A (en) * | 1969-03-27 | 1975-01-21 | United Aircraft Corp | Node-free boron composite filament |
| US4225355A (en) * | 1979-02-16 | 1980-09-30 | United Technologies Corporation | Amorphous boron-carbon alloy in bulk form and methods of making the same |
| US4287259A (en) * | 1979-12-05 | 1981-09-01 | The United States Of America As Represented By The United States Department Of Energy | Preparation and uses of amorphous boron carbide coated substrates |
| US4942062A (en) * | 1984-06-27 | 1990-07-17 | Coating Development Societe Anonyme | Process for producing boron carbide coatings of controlled hardness |
| US5088202A (en) * | 1988-07-13 | 1992-02-18 | Warner-Lambert Company | Shaving razors |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4716083A (en) * | 1983-09-23 | 1987-12-29 | Ovonic Synthetic Materials Company | Disordered coating |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2671735A (en) * | 1950-07-07 | 1954-03-09 | Bell Telephone Labor Inc | Electrical resistors and methods of making them |
| US2810365A (en) * | 1952-12-31 | 1957-10-22 | Shallcross Mfg Company | Apparatus for resistor film deposition |
| US2853969A (en) * | 1953-06-10 | 1958-09-30 | Erie Resistor Ltd | Apparatus for producing electric resistors |
| US3125428A (en) * | 1964-03-17 | Uethod for coating silica rods | ||
| US3365330A (en) * | 1964-05-28 | 1968-01-23 | Air Force Usa | Continuous vapor deposition |
-
1966
- 1966-12-22 US US603781A patent/US3537877A/en not_active Expired - Lifetime
-
1967
- 1967-06-29 SE SE09689/67*A patent/SE353354B/xx unknown
- 1967-07-13 CH CH1000167A patent/CH534744A/de unknown
- 1967-07-27 DE DE19671621248 patent/DE1621248A1/de active Pending
- 1967-08-14 GB GB37185/67A patent/GB1190824A/en not_active Expired
- 1967-12-13 FR FR132082A patent/FR93676E/fr not_active Expired
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3125428A (en) * | 1964-03-17 | Uethod for coating silica rods | ||
| US2671735A (en) * | 1950-07-07 | 1954-03-09 | Bell Telephone Labor Inc | Electrical resistors and methods of making them |
| US2810365A (en) * | 1952-12-31 | 1957-10-22 | Shallcross Mfg Company | Apparatus for resistor film deposition |
| US2853969A (en) * | 1953-06-10 | 1958-09-30 | Erie Resistor Ltd | Apparatus for producing electric resistors |
| US3365330A (en) * | 1964-05-28 | 1968-01-23 | Air Force Usa | Continuous vapor deposition |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3861953A (en) * | 1969-03-27 | 1975-01-21 | United Aircraft Corp | Node-free boron composite filament |
| US4225355A (en) * | 1979-02-16 | 1980-09-30 | United Technologies Corporation | Amorphous boron-carbon alloy in bulk form and methods of making the same |
| US4287259A (en) * | 1979-12-05 | 1981-09-01 | The United States Of America As Represented By The United States Department Of Energy | Preparation and uses of amorphous boron carbide coated substrates |
| US4942062A (en) * | 1984-06-27 | 1990-07-17 | Coating Development Societe Anonyme | Process for producing boron carbide coatings of controlled hardness |
| US5088202A (en) * | 1988-07-13 | 1992-02-18 | Warner-Lambert Company | Shaving razors |
Also Published As
| Publication number | Publication date |
|---|---|
| CH534744A (de) | 1973-03-15 |
| DE1621248A1 (de) | 1971-12-23 |
| GB1190824A (en) | 1970-05-06 |
| FR93676E (fr) | 1969-05-02 |
| SE353354B (de) | 1973-01-29 |
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