US3500350A - Semiparallel content addressable memory - Google Patents

Semiparallel content addressable memory Download PDF

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US3500350A
US3500350A US330396A US3500350DA US3500350A US 3500350 A US3500350 A US 3500350A US 330396 A US330396 A US 330396A US 3500350D A US3500350D A US 3500350DA US 3500350 A US3500350 A US 3500350A
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word
memory
line
elements
word sense
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Alfred D Scarbrough
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Bunker Ramo Corp
Eaton Corp
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Bunker Ramo Corp
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores

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  • a non-destructive readout content addressable memory system comprised of a magnetic core matrix defining a plurality of word locations, each location containing one core per stored information bit with all cores of the same location being traversed by a common word sense line.
  • An all 0s word location and an all ls word location are provided together with means for selectively connecting the sense lines of either of these two locations in opposition to the sense lines of all of the other locations.
  • Semiparallel searches are conducted by initially interrogating all core columns corresponding to search word bits of a first state (eg. l and subsequently interrogating all core columns corresponding to Search Word bits of a second state (eg. 0).
  • This invention relates generally to digital memories and more particularly .to improvements in content addressable type memories, such memories being characterized by having the ability to permit al1 words stored in the memory to be searched in parallel, i.e. simultaneously.
  • U.S. Patent No. 3,031,650 discloses some basic content addressable memory implementations and discusses the characteristics which distinguish such memories from conventional digital memories. Briey, the significant distinguishing characteristic is that each memory location in a content addressable memory is not uniquely identitied by an address as in conventional digital memories but instead content addressable memory locations are selected on the basis of information stored therein; i.e. the contents thereof. Hence, the name content addressable memory.
  • memory search times can be considerably reduced at the cost of some additional hardware. That is, in situations where it is desired to select those locations, out of n locations in memory, storing l information (words) identical to a Search word, information identifying those locations can be derived in one memory access period instead of the n such periods required by conventional digital memories. More particularly, whereas it is necessary in a conventional digital memory to sequentially access the contents of each location (a Word) and compare each such word for identity with a search word, comparison of the search word with all the stored Words can be simultaneously effected in a content addressable memory.
  • a content -addressable memory operates by causing a signal representative of a search word bit to be applied simultaneously to all memory location elements storing bits of corresponding significance.
  • Some type of logic means is provided in the memory, such means being operable to generate signals to indicate whether the bits stored in the various memory location elements are the same as or diiferent from the corresponding search bit being sought. All elements of a single memory location are coupled to a common word sense line and by sensing resultant signals appearing on the word sense line, a determination is made as to whether icc or not the word stored in the memory location associated with 'the word sense line matches or mismatches the Search word.
  • U.S. Patent No. 3,031,- 650 utilizes means (e.g. a flip-Hop or a pair of non-destructive readout magnetic cores) capable of providing both true and complementary manifestations for each stored information bit so as to permit all stored bits to be considered in parallel, as well as all stored words being considered in parallel
  • means e.g. a flip-Hop or a pair of non-destructive readout magnetic cores
  • U.S. Patent No. 3,297,995 filed Mar. 29, 1963, by Ralph J. Koerner and Alfred D. Scarbrough and assigned to the same assignee as the present application, discloses a content addressable memory requiring only a single element (eg.
  • bit equality decisions are made at each memory element. That is, all memory elements storing bits having the same degree of significance are simultaneously compared with a corresponding bit of the search word and an equality decision is made at each such memory element such that the memory element provides a mismatch signal on a word sense line associated therewith whenever it stores a bit which mismatches the corresponding search bit.
  • the sets of memory elements storing bits having different degrees of significance are considered sequentially. All memory elements forming part of a common memory location; i.e.
  • the content addressable memory in the cited application may be implemented by utilizing magnetic memory elements to which are coupled binary interrogation signals such that a first interrogation signal will cause a memory element to provide opposite polarity output pulses to respectively indicate its two possible states and a second interrogation signal will cause the memory element to provide output pulses opposite to those provided in response to the iirst interrogation signal.
  • each memory element therefore provides either a match or mismatch signal depending upon whether the binary state represented by the interrogation signal is different from or the same as the bit stored by the element, preferably only mismatch signals appearing on the word sense lines are sensed.
  • the binary interrogation signals are respectively manifested by increasing and decreasing currents on a digit interrogate line in accordance with corresponding Search word bits stored in a search word register.
  • Each digit interrogate line is associated with magnetic memory elements storing bits of the same significance.
  • the search word may be stored in one of the memory locations with the word sense line associated therewith being connected to a first input terminal of a plurality of differential sense amplifiers, each differential sense amplifier having a second input terminal connected to a different one of the other word sense lines.
  • Digit interrogate lines couple all memory elements storing bits of corresponding significance and consequently, in response to an interrogation signal provided on any digit interrogate line, output signals respectively representing the search bit and a stored bit of corresponding significance are applied to each differential sense amplifier.
  • the differential sense amplifier of course will provide an output signal, constituting a mismatch signal, only when the two signals applied thereto are different.
  • the search Word memory location word sense line may be connected in opposition to each of the other memory location word sense lines so that cancellation of memory element output signals will occur only in match situations thereby easily permitting a conventional sense amplifier to detect a mismatch situation.
  • the search word memory location word sense line can be connected in opposition to the other word sense lines by merely connecting a first terminal thereof to a reference potential and a second terminal thereof to the terminals on the other word sense lines remote from the sense amplifiers.
  • a pair of memory locations is used to store first and second words which respectively are comprised of all "1 bits and all 0 bits.
  • the word sense lines respectively associated with these locations can be connected in opposition to the other memory location word sense lines by a single pole double throw switch means which can be operated in accordance with the states of successive search word bits stored in a data register.
  • the present invention is based on the recognition that in a content addressable memory utilizing only one memory element per stored information bit, where equality searches only are to be performed, search times can be further reduced by modifying the third embodiment of ULS. Patent No. 3,292,159 to cause a semiparallel search to Ibe performed. That is, regardless of the word length employed, all words in memory can be compared with a search Word in only two interrogation periods, i.e. one period for comparing stored bits with respect to search bits and another period for comparing stored bits with respect to l search bits, instead of a number of interrogation periods, albeit they may Overlap, equal to the number of bits in the Search. wordv
  • FIGURE l is a schematic vblock diagram of a content addressable memory embodiment constructed in accordance with the present invention.
  • FIGURE 2(a) is a perspective view of a typical memory element which can be suitably employed in the embodiment of FIGURE l;
  • FIGURE 2(b) is a waveform chart illustrating the operation of the memory element of FIGURE 2(61).
  • FIGURE 3 is a waveform chart showing various signals developed in the content addressable memory of FIGURE 1.
  • FIGURE 1 illustrates a content addressable memory constructed in accordance with the present invention and including a rectangular memory matrix 10 comprised of a plurality of memory elements, a data register 12 for storing either a search word or a word to be written into the memory, write selection means 14 for selecting a location into which a word is to be written, interrogation current generating means 16 for applying interrogation currents to digit interrogate lines, and sensing means 18 for sensing whether each stored bit matches or mismatches a corresponding search word bit.
  • the exemplary matrix 10 includes n-i-Z rows of memory elements 20, each row comprised of Q memory elements each forming part of a different one of Q columns.
  • Each of the memory elements 20 constitutes a bistable device thereby enabling it to assume first and second states respectively representative of binary digits or bits, namely O and 1.
  • Each of the matrix rows can appropriately be referred to as a ⁇ memory location, each location being capable of storing a bit pattern constituting a single word.
  • Each of the Q matrix columns consists of a plurality of memory elements 20 each of which serves to store information of corresponding significance in a different row or memory location. That is, words may in fact represent numerical quantities and it is common practice to place bits of corresponding significance in such words in correspondingly positioned memory elements. For example, binary information can be stored in the elements of the memory matrix such that the elements in column 1 of the matrix respectively store the most significant bit of each stored word and the elements of columns 2 through 4 in the matrix respectively store bits of decreasing significance.
  • a digit interrogate line DI1 is associated with all of the memory elements 20 in column 1 of the matrix.
  • digit interrogate lines DIZ, D13, and DI4 are each correspondingly associated with all the memory elements of respectively different ones of the columns 2, 3, and 4 of the matrix.
  • a word sense line WSl is associated with all of the memory elements in row 1 of the matrix.
  • word sense lines W52, WSn, WSn ⁇ -1, and WSn-i-Z are correspondingly associated with the memory elements,I of rows 2, n, n+1 and n-f-Z of the matrix.
  • a Word drive line WD1 is associated with all of the memory elements in row .t
  • word drive lines WD2, WDn, WDn+1, and WDn-i-Z are correspondingly associated with the memory elements of matrix rows 2, n, n+1 and n+2.
  • a digit drive line DD1 is associated with all of the memory elements of matrix column 1 and similarly, digit drive lines DD2, DD3, and DD4 are each correspondingly associated with all of the memory elements of respectively dilerent ones of the matrix columns 2, 3, and 4.
  • FIGURE 2(a) showing a perspective view of a structural device constituting a non-destructive readout memory element which could be utilized in the memory matrix of FIGURE 1, the operational characteristics of the memory element of FIGURE 2(a) being illustrated in FIGURE 2(b).
  • FIGURE 2(a) illustrates a magnetic -memory element 20 commonly called a Biax.
  • an element comprises a block of magnetic material having apertures 22 and 24 extending therethrough perpendicularly to one another.
  • a digit interrogate line is threaded through the aperture 22 while a word sense line, a word drive line, and a digit drive line are all threaded through the aperture 24.
  • the digit interrogate line is utilized as a conduction path for carrying current to interrogate the state of the element 20 and is connected between a source of reference potential, as ground, and a switch 26 which in turn is connected to a current source 28.
  • the word sense line is utilized to sense the state of the element 20 and is connected between a source of reference potential, as ground, and a sensing device 30.
  • the word drive line is connected between a source of reference potential, as ground, and a pair of switches 32 and 34 which are respectively connected to current sources providing currents -Ic and -l-Z/aIc.
  • the switches 32 and 34 can be closed independently but cannot both be closed at the same time.
  • the current Ic represents a current magnitude suicient to switch the direction of the ux in the magnetic element 20. Closure of the switch 32 therefore has the effect of providing a current having a magnitude Ic on the word drive line in a negative direction and hence will be considered as causing a ux orientation in the element 20 representative of a "0 bit.
  • Closure of the switch 34 will provide a current 2/sIc in a positive direction on the word drive line which of course is intended to be insufficient to change the direction of the ilux in the element 20.
  • the digit drive line is also connected between a reference potential, as ground, and a pair of switches 36 and 38.
  • Switch 36 is connected to a source of current -i-laIc and switch 38 is connected to a source of current -/slc. Switches 36 and 38 cannot be closed at the same time.
  • the information in the memory element is initially cleared to 0 by closing switch 32. Then, the new information is written in by closing switch 34 and switch 36 if a "1 is to be written.
  • switch 38 is closed if the new information bit is 0.
  • the current -1/31c would not be necessary, as a practical matter in the utilization of the Biax, it is necessary to assure that the current -l-2/3Ic applied to the kword drive line alone does not switch the memory element 20 to its l state.
  • FIGURE 2(b) is a waveform chart illustrating the signals appearing on the various memory element lines in the course of writing in and reading out.
  • the switch l26 in the digit interrogate line is closed to thereby initiate a positive current pulse on the digit line as illustrated in line (a) of FIGURE 2(b). If it is initially assumed that the memory element 20 stores a 0, as a result of the current in the digit interrogate line, a positive voltage pulse will be initially generated on the word sense line followed by generation of a negative pulse. If on tthe other hand, the element 20 stores a 1, the current pulse in the digit interrogate line initially causes a negative voltage pulse to appear on the word sense line followed by the appearance of a positive pulse.
  • state interrogations are accomplished in a non-destructive manner. That is, although the current driven through the digit interrogate line will induce voltage pulses on the word sense line, the current will not change the state of the memory element 20.
  • the state of the element of course can be determined by conventional sense ampli- Iiers which :sense whether the initial pulse appearing on the word sense line is positive or negative. If a positive pulse is initially generated followed by a negative pulse, the element 20 of course stores a, 0 and on the other hand, if a negative voltage pulse is initially generated fo'llowed by a positive pulse, the element 20 stores a 1.
  • any memory element which can be read non-destructively can be substituted for the Biax element in the content addressable memory of FIGURE 1.
  • each of the word drive lines is connected between ground and a pair of transistor switches 40 and 42 which correspond to switches 32 and 34 of FIGURE 2(a).
  • Each of the Word drive lines is connected to the collector of transistor switch 40, the emitter of transistor switch 40 being connected through a resistor 44 to a source of positive potential.
  • the word drive line in addition is connected to the emitter of transistor switch 42 whose collector is connected through a resistor 46 to a source of negative potential.
  • the bases of the transistors 40 and 42 are respectively connected to the outputs of AND gates 48 and 50 which, when enabled, provide a negative potential suitable to forward bias the transistor switches.
  • resistors 44 and 46 are chosen such that when AND gate 48 is enabled, the transistor 40 will be forward biased so as to establish a current Ic in the word drive line and when AND gate 50 is enabled, transistor 42 Will be forward biased so as to establish a current 2&1@ in an opposite direction in the word drive line.
  • a decoder circuit 52 is provided which has a plurality of output terminals, each of which corresponds to one of the rows of the memory matrix 10. Each output terminal is connected to the input of a different pair of AND gates 48 and 50.
  • a control means 54 is provided which has a clear output terminal, a write output terminal, a searc output terminal and a decoder input output terminal. The clear and write output terminals are respectively connected to the inputs of all AND gates 48 and 50.
  • the decoder input output terminal provides the input to the decoder 52 which uniquely identities one of yits output terminals and correspondingly one of the matrix I'OWS.
  • AND gates 64 and 66 are connected to the bases of ⁇ transistors 56 and S8, and when enabled, provide a forward biasing negative potential thereto.
  • the values of the resistors 60 and 62 are chosen to be equal such that when either of the AND gates 64 or 66 is enabled, a current having the magnitude 1/aIc will either be conducted downwardly in the digit drive line through transistor 56 or upwardly in the digit drive line through transistor 58.
  • Information to be written into any of the locations in the memory matrix is initially entered into a data register 12 comprised of four flip-iiop stages, each flip-flop having true and false output terminals.
  • the true and false output terminals of each of the dip-flops are respectively connected to the inputs of associated AND gates 64 and 66.
  • the write output terminal of the control means 54 is connected to the input of all of the AND gates 64 and 66.
  • control means 54 In order for information to be written into the memory matrix 10, the control means 54 initially provides a true signal on its clear output line and in addition provides suitable signals to the decoder 52 identifying one of the matrix rows. As a consequence, each of the memory ele* ments in the identified row is cleared to a state. Subsequently, the control means provides a true signal on its write output terminal thereby causing a current -1-2/31c to be provided on the word drive line identified by the decoder 52 and currents of either -l-/alc or -l/slc to be developed on the digit drive lines in accordance with the contents of the data register 12. Thus, it can be seen that information can be selectively entered into the memory matrix 10.
  • a pair of reference words respectively consisting of all "0 bits and all l bits are respectively stored in the row n+1 and row n-i-Z locations of the memory matrix.
  • a search word is entered into the data register 12 (by means not shown).
  • a search to locate all words stored in the memory matrix which are identical to the search word is performed by initially comparing each of the l search bits with the correspondingly positioned bits of the stored words, and subsequently the 0 search bits with the correspondingly positioned bits of the stored words. Briey, comparison of a search bit with a corresponding stored bit is effected by providing an interrogation current on the digit interrogate line associated with the search bit and stored bit under consideration.
  • the application of the interrogation current will cause the memory elements storing the stored bit to provide an output signal on its associated word sense line representative of its state.
  • the application of the interrogation current to the digit interrogate line will cause the elements in rows n+1 and 114-2 to respectively provide output signals on the row n+1 and n-l-Z Word sense lines representative of a "0 bit and a 1 bit.
  • the row n+1 word sense line can be connected in opposition to each of the other word sense lines, that is the row 1, row 2, and row n word sense lines, by connecting the right-hand terminal thereof to a source of reference potential, such as circuit ground.
  • the left-hand terminal of the row n+1 word sense line is connected to the lefthand terminal of the other word sense lines which have their right-hand terminals connected to the input of the sense amplifiers 70. Grounding of the righthand terminal of the row n+1 Word sense line is accomplished by forward biasing transistors 76 and 78.
  • the row n+1 word sense line is connected to the emitter of transistor 76 whose collector is connected to ground and to the collector of transistor 78 whose emitter is connected to ground, Similarly, the row n+2 word sense line can be connected in opposition to the other Word sense lines by forward biasing transistors and 82.
  • the row n ⁇ 2 Word sense line is connected to the emitter of transistor 80 whose collector is connected to ground and to the collector of transistor 82 whose emitter is connected to ground.
  • control means 54 In order to initiate a search, the control means 54 provides a true output pulse (which will be assumed to be negative) on its search output terminal which is coupled to the bases of transistors 80 and I82.
  • search output terminal of control means 54 is connected to the set input terminal of a delay multivibrator 84.
  • the delay multivibrator In response to the application of the true input signal to the set input terminal of the delay multivibrator, the delay multivibrator will switch to a tr-ue state for a short interval and will subsequently switch back to a false state. The transition of the delay multivibrator from a true to a false state is coupled through a capacitor 86 to the bases of transistors 76 and 78.
  • those gates 88 which are associated with data register stages storing a bit 1 will be enabled to thereby initiate an interrogation current, through OR gate 92, on the digit interrogate line associated therewith.
  • those AND gates 90 associated with data register stages storing 0 bits will be enabled to initiate interrogation currents on associated digit interrogate lines.
  • FIGURE 3 illustrates output signals developed on the various word sense lines in response to the application of an interrogation current to the digit interrogate line D11, assuming that the various data register stages and memory elements have states as indicated within the parentheses in the blocks of FIGURE 1 which represent them.
  • the point on each of the word sense lines to the left of the column 1 element is identified as point a and the point to the right of.the element is identified as point b.
  • the bistable devices 71 of rows 2 and n will -be set so as to indicate that the words stored in matrix rows 2 and n mismatch the search word.
  • an interrogation current is simultaneously generated on the digit interrogate line D14.
  • the interrogation current on digit interrogate line DI4 will also cause the application of input signals to sense amplifiers SA2 and SAn but will not cause the development of an input signal to sense amplifier SAI inasmuch as the state of the row 1 column 4 memory element lis the same as stage 4 of the data register.
  • interrogation current will be simultaneously applied to digit interrogate lines D12 and D13 and that such interrogation currents will result in the application of output signals to the sense amplifiers SA1 and SAn and the cancellation of signals on the word sense line W82.
  • a content addressable memory utilizing only one memory element per stored bit of information can be operated in a semiparallel manner to effect equality searches. More particularly, only two interrogation periods are required to search the memory regardless of the memory word length. One interrogation period is utilized to interrogate the memory with respect to l search bits and another interrogation period is utilized to search the memory with respect to search bits.
  • One interrogation period is utilized to interrogate the memory with respect to l search bits and another interrogation period is utilized to search the memory with respect to search bits.
  • a matrix of memory elements respectively including n rows of elements, each row comprising a memory location capable of storing a word, and Q columns of elements, each column including a correspondingly positioned memory element from each location, each of said elements capable of assuming at least two different states and responsive to being interrogated for developing bipolar output signals of substantially equal magnitude wherein a first bipolar signal is indicative of a first state and the opposite bipolar signal is indicative of a second state;
  • first and second word sense lines respectively coupled to the elements of said first and second groups
  • each of said elements in said rst group being responsive to an interrogating signal applied thereto for providing an output signal indicative of its state on said first word sense line;
  • sensing means connected to said word sense lines for developing a signal related to the difference between the output signals respectively provided thereon.
  • sensing means includes means for connecting said first and second Word sense lines in opposition.
  • a content addressable memory comprising:
  • a matrix of memory elements respectively including n rows of elements, each row comprising a memory location capable of storing a word, and Q columns of elements, each column including a correspondingly positioned memory element from each location, each of said elements capable of assuming at least two different states;
  • each of said elements being responsive to a signal on the digit interrogate line associated therewith for providing on its associated word sense line a bipolar output signal of equal magnitude wherein a first bipolar signal is indicative of a first state or a bipolar output signal of equal 4magnitude and opposite polarity indicative of a second state;
  • sensing means associated with each of said word sense lines for sensing whether an output signal appearing thereon is the same as or different from an output signal appearing on the Word sense line associated with said predetermined location.
  • a content addressable memory comprising:
  • a matrix of binary memory elements respectively including n rows of elements, each row comprising a memory location capable of storing a word, and Q columns of elements, each column including a correspondingly positioned memory element from each location;
  • a data register including Q stages, each stage storing a different bit of a search word corresponding in significance to the bits stored in a different one of said matrix columns;
  • each of said elements being responsive to a signal on the digit interrogate line associated therewith for providing an output signal on its associated word sense line indicative of its state;
  • switch means for successively connecting said word sense lines respectively associated with said locations storing said words comprised of all 0 and all l bits in opposition to all other word sense lines;
  • a content addressable memory including a matrix of non-destructive readout binary memory elements comprised of n rows of elements, each row comprising a memory location capable of storing a Word, and Q columns of elements, each column including a correspondingly positioned memory element from each location and a data register including Q stages, each stage storing a different bit of a Search word corresponding in significance to the bits stored in a different one of said matrix columns, means for comparing said search word with a yword stored in each of said memory locations, said means comprising:
  • each of said elements being responsive to a signal on the digit interrogate line associated therewith for providing an output signal on its associated word sense line indicative of its state;
  • timing means for defining successive first and second interrogation periods
  • sense amplier means connected to each of said word sense lines.
  • each of said memory elements comprises a magnetic core having rst and second orthogonally oriented apertures
  • said digit interrogate line being threaded through said first aperture and said word sense line being threaded through said second aperture.
  • Apparatus for comparing a first multibit word stored in a multistage data register with a second multibit word stored in a first group of binary memory elements comprising:
  • each of said elements being responsive to a signal applied to the digit interrogate line associated therewith for providing an output signal indicative of its state on the word sense line associated therewith;
  • first means for connecting said second group word sense line in opposition to said first group Word sense line and for simultaneously applying signals to said digit interrogate lines associated with each data register stage storing a l bit;
  • said first means including a plurality of gates, each of which has an input terminal connected to a different 13 one of said data register stages and all of which are responsive to said first timing signal;
  • said second means including a plurality of gates, each of which has an input terminal connected to a different one of said data register stages and all of which are responsive to said second timing signal;
  • each of said digit interrogate lines connected to a dierent one of said rst means gates and a different one of said second means gates.
  • each of said memory elements comprises a magnetic core having rst and second orthogonally oriented apertures

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FR1281865A (fr) * 1958-11-19 1962-01-19 Ibm Comparateur
FR1267351A (fr) * 1959-07-10 1961-07-21 Rca Corp Dispositif à mémoire
FR1311882A (fr) * 1960-10-07 1962-12-14 Ibm Dispositif de mémoire associative
US3221308A (en) * 1960-12-30 1965-11-30 Ibm Memory system
FR1285125A (fr) * 1961-03-30 1962-02-16 Artos Meier Windhorst Kg Procédé et dispositif d'essorage de produits en bande, notamment de bandes de matières textiles
US3241124A (en) * 1961-07-25 1966-03-15 Gen Electric Ranking matrix

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US2973508A (en) * 1958-11-19 1961-02-28 Ibm Comparator
US3206735A (en) * 1962-06-14 1965-09-14 Burroughs Corp Associative memory and circuits therefor
US3257650A (en) * 1963-12-03 1966-06-21 Bunker Ramo Content addressable memory readout system

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